Preparation method of silicon substrate infrared long-wave high-transmittance antireflection film system

Abstract

The invention relates to a preparation method of a silicon substrate infrared long-wave high-transmittance antireflection film system. The preparation method comprises the following steps: S1, cleaning an accompanying plating sheet serving as a silicon substrate of a lens and a product and preparing three film materials of Ge, ZnS and YF3 before plating; s2, the cleaned lens is put into a tool clamp, the tool clamp with the lens is hung into a cavity of a coating machine, and vacuumizing baking and film material pre-melting are carried out; s3, cleaning the lens by an ion source; s4, under the vacuum condition, a first Ge film layer, a second ZnS film layer, a third Ge film layer, a fourth ZnS film layer, a fifth YF3 film layer and a sixth ZnS film layer are sequentially plated on the first face of the lens, the six film layers form a film system, and ion source auxiliary deposition is used for all the film layers; s5, keeping at constant temperature after plating; s6, cooling and part taking; and S7, repeating the steps S1 to S6, and plating the same film system on the second surface of the lens. Therefore, the prepared silicon substrate and the film systems on the two sides can be used for improving the infrared long wave transmittance.

Description

Technical Field

[0001] The present invention relates to the field of infrared coating, and more specifically to a method for preparing a silicon-based infrared long-wave high-transmittance anti-reflection film system. Background Art

[0002] In the field of infrared optical technology, silicon's high transmittance and stable chemical properties enable it to play an irreplaceable role in many high-tech fields such as military reconnaissance, environmental monitoring, medical diagnosis, and remote sensing.

[0003] However, even on a silicon substrate, light still loses some energy due to reflection when it is incident, especially in the long-wave infrared band. This phenomenon significantly reduces the overall efficiency of the system. In order to solve this problem, the development of efficient anti-reflection film technology has become the key to improving the performance of infrared optical systems. Summary of the invention

[0004] In view of the problems existing in the background technology, an object of the present invention is to provide a method for preparing a silicon substrate infrared long-wave high-transmittance anti-reflection film system, wherein the prepared silicon substrate together with the film system on both sides can be used to improve the average transmittance of infrared long waves, especially in the 7.7-10.5μm band, 8-12μm band, and 7.7-12μm band.

[0005] Another object of the present disclosure is to provide a method for preparing a silicon-based infrared long-wave high-transmittance anti-reflection film system, wherein the prepared silicon substrate together with the film systems on both sides can be used to achieve acceptance in accordance with bubble test, adhesion test, salt spray test, hot and cold shock test, constant temperature and humidity test, low temperature test, and high temperature test.

[0006] Thus, a method for preparing a silicon-based infrared long-wave high-transmittance anti-reflection film system includes the following steps: S1, before plating, cleaning the accompanying plated sheet and product of the silicon-based lens and preparing three kinds of film materials, Ge, ZnS and YF3; S2, putting the cleaned lens into a fixture, hanging the fixture with the lens in place into the cavity of a coating machine, vacuum baking and pre-melting the film materials; S3, cleaning the lens with an ion source; S4, under vacuum conditions, sequentially coating the first Ge film layer, the second ZnS film layer, the third Ge film layer, the fourth ZnS film layer, the fifth YF3 film layer and the sixth ZnS film layer on the first surface of the lens, the six film layers constituting the film system, and all the film layers are deposited with the assistance of an ion source; S5, maintaining a constant temperature after plating; S6, cooling and taking out the piece; S7, repeating steps S1 to S6 to coat the same film system on the second surface of the lens.

[0007] The beneficial effects of the present disclosure are as follows.

[0008] In the preparation method of the silicon substrate infrared long-wave high-transmittance anti-reflection film system disclosed in the present invention, the same Sub (silicon substrate) / Ge / ZnS / Ge / ZnS / YF3 / ZnS / Air (air) film system is plated on both sides of the silicon substrate through steps S1 to S7. As verified by the test process, it can be used to improve the infrared long-wave, especially the transmittance in the 7.7-10.5μm band to an average of more than 91% (specifically 91.2-91.4%), the transmittance in the 8-12μm band to an average of more than 87.5% (specifically 87.6-87.8%), and the transmittance in the 7.7-12μm band to an average of more than 87.5% (specifically 87.9-88.1%), thereby providing excellent performance for the infrared optical system.

[0009] In the preparation method of the silicon substrate infrared long-wave high-transmittance anti-reflection film system disclosed in the present invention, the same Sub (silicon substrate) / Ge / ZnS / Ge / ZnS / YF3 / ZnS / Air (air) film system is plated on both sides of the silicon substrate through steps S1 to S7. As verified by the test process, it can pass seven tests including the blister test, adhesion test, salt spray test, hot and cold shock test, constant temperature and humidity test, low temperature test, and high temperature test. That is, it can be used to achieve acceptance that meets the requirements of the blister test, adhesion test, salt spray test, hot and cold shock test, constant temperature and humidity test, low temperature test, and high temperature test.

[0010] In the preparation method of the silicon-based infrared long-wave high-transmittance anti-reflection film system disclosed in the present invention, since only three film materials are involved and three layers of ZnS film layers are alternately connected with two layers of Ge film layers and one layer of YF3 film layer, the preparation method is simple, low-cost, and suitable for large-scale production. BRIEF DESCRIPTION OF THE DRAWINGS

[0011] Figure 1 It is a schematic structural diagram of a silicon substrate and the film systems on both sides prepared according to the method for preparing the silicon substrate infrared long-wave high-transmittance anti-reflection film system disclosed in the present invention.

[0012] Figure 2 It is the transmittance spectrum of the accompanying coating sheet of Example 1 together with the films on both sides in the infrared long-wave band. DETAILED DESCRIPTION

[0013] It will be understood that the disclosed embodiments are merely examples of the present disclosure, which may be implemented in various forms, and therefore, the specific details disclosed herein should not be interpreted as limiting, but merely as a basis for the claims and as a representative basis for teaching one of ordinary skill in the art to implement the present disclosure in various ways.

[0014] [Preparation method of silicon substrate infrared long-wave high transmittance antireflection film system]

[0015] Reference Figure 1 According to the disclosed method, the preparation method of the silicon substrate infrared long-wave high-transmittance antireflection film system comprises the following steps:

[0016] S1, before plating, clean the accompanying plating sheet and products of the silicon substrate as the lens and prepare the three film materials of Ge, ZnS and YF3;

[0017] S2, the cleaned lens is placed in a fixture, and the fixture with the lens is hung in the cavity of the coating machine for vacuum baking and pre-melting of the film material;

[0018] S3, ion source cleaning lens;

[0019] S4, under vacuum conditions, a first Ge film layer, a second ZnS film layer, a third Ge film layer, a fourth ZnS film layer, a fifth YF3 film layer, and a sixth ZnS film layer are deposited on the first surface of the lens in sequence, and the six film layers constitute a film system, and all the film layers are deposited using an ion source as an auxiliary.

[0020] S5, constant temperature maintenance after plating;

[0021] S6, cooling and picking up;

[0022] S7, repeating steps S1 to S6 to coat the second surface of the lens with the same coating system.

[0023] In the preparation method of the silicon substrate infrared long-wave high-transmittance anti-reflection film system disclosed in the present invention, the same Sub (silicon substrate) / Ge / ZnS / Ge / ZnS / YF3 / ZnS / Air (air) film system is plated on both sides of the silicon substrate through steps S1 to S7. As verified by the test process described later, it can be used to improve the infrared long-wave, especially the transmittance in the 7.7-10.5μm band to an average of more than 91% (specifically 91.2-91.4%), the transmittance in the 8-12μm band to an average of more than 87.5% (specifically 87.6-87.8%), and the transmittance in the 7.7-12μm band to an average of more than 87.5% (specifically 87.9-88.1%), thereby providing excellent performance for the infrared optical system.

[0024] In the preparation method of the silicon substrate infrared long-wave high-transmittance anti-reflection film system disclosed in the present invention, the same Sub (silicon substrate) / Ge / ZnS / Ge / ZnS / YF3 / ZnS / Air (air) film system is plated on both sides of the silicon substrate through steps S1 to S7. As verified by the test process described later, it can pass a total of seven tests including the blister test, adhesion test, salt spray test, thermal shock test, constant temperature and humidity test, low temperature test, and high temperature test. That is, it can be used to achieve acceptance that meets the requirements of the blister test, adhesion test, salt spray test, thermal shock test, constant temperature and humidity test, low temperature test, and high temperature test.

[0025] In the preparation method of the silicon-based infrared long-wave high-transmittance anti-reflection film system disclosed in the present invention, since only three film materials are involved and three layers of ZnS film layers are alternately connected with two layers of Ge film layers and one layer of YF3 film layer, the preparation method is simple, low-cost, and suitable for large-scale production.

[0026] The cleaning in step S1 is beneficial to improve the surface state of each surface of the lens, remove the pollutants on the surface, ensure the cleanliness before coating, ensure that there will be no interference from impurities during the coating process, and help improve the bonding performance of the corresponding film system on each surface with the corresponding surface of the lens, and improve the flatness of the film layer. In step S1, for example, ultrasonic cleaning is used for cleaning. Specifically, ultrasonic cleaning uses alumina polishing liquid polishing, followed by ultrasonic pure water cleaning. For example, the alumina polishing liquid uses a 0.1μm model polycrystalline diamond liquid from Nanjing Henry Precision Optics Co., Ltd. In step S1, for example, the thickness of the accompanying coating sheet is 1.0mm.

[0027] The baking in step S2 is to prepare the temperature for the pre-melting of the film material. The pre-melting of the film material can release the gas in the film material and remove the impurities in the film material, ensure the purity of the film material, change the state of the film material, and thus reduce the adverse factors that affect the quality of the film layer during the film coating process of step S4 repeated in step S7. In addition, baking also heats the lens. In one example, in step S2, the temperature of the chamber of the coating machine is set to 150°C; when the vacuum reaches (3.0-5.0)×10 - 3 The film material is pre-melted at Pa, ZnS and YF3 are pre-melted by resistance heating, and Ge is pre-melted by electron beam heating. After the film material is pre-melted, the temperature of the cavity of the coating machine reaches 150℃ and keeps constant temperature for 15-20 minutes.

[0028] The ion source cleaning in step S3 effectively purifies and activates the surface of the lens through high-energy ion bombardment, optimizes the surface comprehensive characteristics, and promotes uniform and dense deposition of the film layer, thereby improving the overall performance and long-term stability of the coating. In one example, in step S3, when the vacuum degree reaches (1.0-2.0)×10 -3 Pa, start the ion source of the vacuum coating machine. The ion source is a Hall ion source. The ion source parameters are: neutralization current 0.6A, neutralization gas flow rate 8sccm, anode voltage 220V, anode current 2A, argon gas flow rate ratio 100%, and cleaning time 300-400s.

[0029] In one example, in step S4, during the coating process, argon gas is filled into the chamber of the coating machine and evacuated to form a flowing vacuum, ensuring that the vacuum degree of the coating is maintained at (4.5-5.5)×10 -3 Pa, and maintain the coating temperature at 150°C.

[0030] In one example, in step S4, the evaporation mode of the film material is: ZnS and YF3 are both evaporated using resistance heating, and Ge is evaporated using electron beam.

[0031] In one example, in step S4, the evaporation rate of ZnS is 0.6 nm / s, the evaporation rate of YF3 is 0.5 nm / s, and the evaporation rate of Ge is 0.4 nm / s.

[0032] In one example, in step S4,

[0033] The thickness of the first Ge film layer is 263.78nm.

[0034] The thickness of the second ZnS film layer is 350.24nm.

[0035] The thickness of the third Ge film layer is 219.33nm.

[0036] The thickness of the fourth ZnS film layer is 500nm.

[0037] The thickness of the fifth YF3 film layer is 732.65nm.

[0038] The thickness of the sixth ZnS film layer is 265nm;

[0039] In step S4, the crystal oscillator method is used to monitor the film thickness using the corresponding crystal oscillator of the multiple crystal oscillators of the crystal controller. After the ion source is cleaned, the crystal controller controls the corresponding operation of the new crystal oscillator among the multiple crystal oscillators, and the crystal oscillator frequency is 6MHz. The film thickness is monitored by the crystal controller, and the thickness of the film is accurately controlled to ensure uniform film thickness and improve the uniformity of transmittance.

[0040] The ion source assistance in step S4 can enhance the bonding force between the film layer and the silicon substrate, while improving the compactness and uniformity of the film layer. In one example, in step S4, for the Ge film layer, the ion source is a Hall ion source, and the ion source parameters for auxiliary deposition are: neutralization current 0.5A, neutralization gas flow 8sccm, anode voltage 80V, anode current 0.7A, and argon gas flow accounted for 100%; for the ZnS film layer, the ion source is a Hall ion source, and the ion source parameters for auxiliary deposition are: neutralization current 0.5A, neutralization gas flow 8sccm, anode voltage 100V, anode current 1A, and argon gas flow accounted for 100%; for the YF3 film layer, the ion source is a Hall ion source, and the ion source parameters for auxiliary deposition are: neutralization current 0.6A, neutralization gas flow 8sccm, anode voltage 130V, anode current 1.3A, and argon gas flow accounted for 100%.

[0041] In one example, in step S5, after plating is completed, the chamber is kept at a constant temperature of 150°C for 5-15 minutes.

[0042] In one example, in step S6, the door is opened to take out the items when the temperature drops below 100°C.

[0043] [test]

[0044] Example 1

[0045] The method for preparing the silicon substrate infrared long-wave high-transmittance antireflection film system of Example 1 adopts the following steps:

[0046] S1, before plating, the accompanying plating sheet and products of the silicon substrate of the lens are cleaned and three kinds of film materials, Ge, ZnS and YF3, are prepared. The thickness of the accompanying plating sheet is 1.0mm, and ultrasonic cleaning is used for cleaning. Ultrasonic cleaning uses alumina polishing liquid and then ultrasonic pure water cleaning. The alumina polishing liquid uses 0.1μm polycrystalline diamond liquid from Nanjing Henry Precision Optics Co., Ltd.;

[0047] S2, put the cleaned lens into the fixture, hang the fixture with the lens into the cavity of the coating machine, vacuum bake and pre-melt the film material. The coating machine is a vacuum coating machine with Hall ion source manufactured and sold by Chengdu Xiwok Vacuum Technology Co., Ltd. The temperature of the cavity of the coating machine is set to 150℃. When the vacuum reaches 4,0×10 -3 The film material is pre-melted at Pa. ZnS and YF3 are pre-melted by resistance heating, and Ge is pre-melted by electron beam heating. After the film material is pre-melted, the temperature of the cavity of the coating machine reaches 150℃ and is kept constant for 20 minutes.

[0048] S3, ion source cleaning lens, when the vacuum reaches 1.3×10 -3 When Pa, the ion source of the vacuum coating machine is started. The ion source is a Hall ion source. The ion source parameters are: neutralization current 0.6A, neutralization gas flow rate 8sccm, anode voltage 220V, anode current 2A, argon gas flow rate ratio 100%, and cleaning time 350s;

[0049] S4, under vacuum conditions, the first Ge film layer, the second ZnS film layer, the third Ge film layer, the fourth ZnS film layer, the fifth YF3 film layer, and the sixth ZnS film layer are deposited on the first surface of the lens in sequence. The six layers constitute a film system, and all the layers are deposited using an ion source.

[0050] in,

[0051] During coating, argon gas is filled into the chamber of the coating machine and evacuated to form a flowing vacuum to ensure that the vacuum degree of the coating is maintained at 5.0×10 -3 Pa, and maintain the coating temperature at 150°C;

[0052] The evaporation mode of the film materials is: ZnS and YF3 are evaporated by resistance heating, and Ge is evaporated by electron beam;

[0053] The evaporation rate of ZnS is 0.6nm / s, the evaporation rate of YF3 is 0.5nm / s, and the evaporation rate of Ge is 0.4nm / s;

[0054] The thickness of the first Ge film layer is 263.78nm.

[0055] The thickness of the second ZnS film layer is 350.24nm.

[0056] The thickness of the third Ge film layer is 219.33nm.

[0057] The thickness of the fourth ZnS film layer is 500nm.

[0058] The thickness of the fifth YF3 film layer is 732.65nm.

[0059] The thickness of the sixth ZnS film layer is 265nm;

[0060] The crystal oscillator method is used to monitor the film thickness by using the corresponding crystal oscillator of the multiple crystal oscillators of the crystal controller. After the ion source is cleaned, the crystal controller controls the corresponding operation of the new crystal oscillator of the multiple crystal oscillators, and the crystal oscillator frequency is 6MHz;

[0061] For the Ge film layer, the ion source is a Hall ion source, and the ion source parameters for auxiliary deposition are: neutralization current 0.5A, neutralization gas flow 8sccm, anode voltage 80V, anode current 0.7A, argon gas flow 100%,

[0062] For the ZnS film layer, the ion source is a Hall ion source, and the ion source parameters for auxiliary deposition are: neutralization current 0.5A, neutralization gas flow 8sccm, anode voltage 100V, anode current 1A, and argon gas flow 100%;

[0063] For the YF3 film layer, the ion source is a Hall ion source, and the ion source parameters for auxiliary deposition are: neutralization current 0.6A, neutralization gas flow 8sccm, anode voltage 130V, anode current 1.3A, and argon gas flow 100%;

[0064] S5, after plating is completed, the cavity is kept at a constant temperature of 150°C for 10 minutes;

[0065] S6, wait until the temperature drops to 90°C, open the door and take out the items;

[0066] S7, repeating steps S1 to S6 to coat the second surface of the lens with the same coating system.

[0067] Example 2

[0068] Except for the following differences, the rest is the same as Example 1:

[0069] In step S2, when the vacuum reaches 5,0×10 -3 The film material is pre-melted at Pa;

[0070] In step S3, when the vacuum degree reaches 2.0×10 -3 Pa, the ion source of the vacuum coating machine was started, and the cleaning time was 400s;

[0071] In step S4, the vacuum degree of the coating is maintained at 5.5×10 -3 Pa;

[0072] In step S5, the temperature is maintained at a constant level for 15 minutes.

[0073] Example 3

[0074] Except for the following differences, the rest is the same as Example 1:

[0075] In step S2, when the vacuum reaches 3,0×10 -3 The film material is pre-melted at Pa;

[0076] In step S3, when the vacuum degree reaches 1.0×10 -3 Pa, start the ion source of the vacuum coating machine, and the cleaning time is 300s;

[0077] In step S4, the vacuum degree of the coating is maintained at 4.5×10 -3 Pa;

[0078] In step S5, the temperature is maintained at a constant level for 5 minutes.

[0079] Comparative Example 1

[0080] Except that the temperature of step S2, step S4 and step S5 is 120° C., the rest is the same as in Example 1.

[0081] Comparative Example 2

[0082] Except that all the film layers in step S4 are not deposited using an ion source as an auxiliary, the rest is the same as in Example 1.

[0083] The following tests were performed on Examples 1-3 and Comparative Examples 1-2 after coating on both sides.

[0084] Water bubble test: Take tap water to conduct a water bubble test for 2 hours to observe whether the film layers on each side of the accompanying plating sheet fall off from the accompanying plating sheet and whether the film layers on each side of the accompanying plating sheet crack.

[0085] Adhesion test: Use hand to stick 3M tape on each side of the plating sheet and pull the tape in the direction opposite to the sticking end to observe whether the film layer is pulled up.

[0086] Salt spray test: neutral salt spray test for 48 hours, observe whether the film layer on each side of the accompanying plating sheet falls off, observe whether the film layer on each side of the accompanying plating sheet cracks.

[0087] Thermal shock test: In a high and low temperature box, perform thermal shock test in the range of -40℃ to 85℃ for 24 hours to observe whether the film layers on each side of the accompanying plating sheet fall off or crack.

[0088] Constant temperature and humidity test: In a constant temperature and humidity chamber, at 50°C and 95% relative humidity for 48 hours, observe whether the film layers on each side of the accompanying plating sheet fall off or crack.

[0089] Low temperature test: In a low temperature box, at -40℃ for 48h, observe whether the film layers on each side of the accompanying plating sheet fall off, and observe whether the film layers on each side of the accompanying plating sheet crack.

[0090] High temperature test: In a high temperature box, at 85℃ for 48h, observe whether the film layers on each side of the accompanying plating sheet fall off, and observe whether the film layers on each side of the accompanying plating sheet crack.

[0091] Table 1 shows the average transmittance of Examples 1-3 and Comparative Examples 1-2 in the infrared long-wave band and the results of various tests.

[0092] Table 1 Average transmittance of Examples 1-3 and Comparative Examples 1-2 in the infrared long-wave band and results of various tests

[0093]

[0094]

[0095] in, Figure 2 It is the transmittance spectrum of the accompanying coating sheet of Example 1 together with the films on both sides in the infrared long-wave band.

[0096] The above detailed description is used to describe multiple exemplary embodiments, but this document is not intended to be limited to the explicitly disclosed combinations. Therefore, unless otherwise stated, the various features disclosed herein can be combined together to form multiple additional combinations that are not shown for the sake of simplicity.

Claims

1. A method for preparing a silicon-based infrared long-wave high-transmittance antireflection film system, characterized in that: Includes steps: S1, before plating, clean the accompanying plating sheet and products of the silicon substrate as the lens and prepare the three film materials of Ge, ZnS and YF3; S2, the cleaned lens is placed in a fixture, and the fixture with the lens is hung in the cavity of the coating machine for vacuum baking and pre-melting of the film material; S3, ion source cleaning lens; S4, under vacuum conditions, a first Ge film layer, a second ZnS film layer, a third Ge film layer, a fourth ZnS film layer, a fifth YF3 film layer, and a sixth ZnS film layer are deposited on the first surface of the lens in sequence, and the six film layers constitute a film system, and all the film layers are deposited using an ion source as an auxiliary. S5, constant temperature maintenance after plating; S6, cooling and picking up; S7, repeating steps S1 to S6 to coat the second surface of the lens with the same coating system.

2. The method for preparing a silicon-based infrared long-wave high-transmittance antireflection film system according to claim 1, characterized in that: In step S1, ultrasonic cleaning is used for cleaning, and the thickness of the accompanying plating sheet is 1.0 mm; Ultrasonic cleaning uses aluminum oxide polishing liquid for polishing, followed by ultrasonic pure water cleaning. The alumina polishing liquid adopts the 0.1μm polycrystalline diamond liquid produced by Nanjing Henry Precision Optics Co., Ltd.

3. The method for preparing a silicon-based infrared long-wave high-transmittance antireflection film system according to claim 1, characterized in that: In step S2, The temperature of the coating machine chamber is set to 150°C; When the vacuum reaches (3.0-5.0)×10 -3 The film material is pre-melted at Pa, ZnS and YF3 are pre-melted by resistance heating, and Ge is pre-melted by electron beam heating. After the film material is pre-melted, the temperature of the cavity of the coating machine reaches 150℃ and keeps constant temperature for 15-20 minutes.

4. The method for preparing a silicon-based infrared long-wave high-transmittance antireflection film system according to claim 1, characterized in that: In step S3, When the vacuum degree reaches (1.0-2.0)×10 -3 Pa, start the ion source of the vacuum coating machine, The ion source is a Hall ion source, and the ion source parameters are: neutralization current 0.6A, neutralization gas flow rate 8sccm, anode voltage 220V, anode current 2A, argon gas flow rate ratio 100%, and cleaning time 300-400s.

5. The method for preparing a silicon-based infrared long-wave high-transmittance antireflection film system according to claim 1, characterized in that: In step S4, During coating, argon gas is filled into the cavity of the coating machine and evacuated to form a flowing vacuum to ensure that the vacuum degree of the coating is maintained at (4.5-5.5)×10 -3 Pa, and maintain the coating temperature at 150°C.

6. The method for preparing a silicon-based infrared long-wave high-transmittance antireflection film system according to claim 1, characterized in that: In step S4, The evaporation mode of the film material is: ZnS and YF3 are both evaporated using resistance heating, and Ge is evaporated using electron beam.

7. The method for preparing a silicon-based infrared long-wave high-transmittance antireflection film system according to claim 1, characterized in that: In step S4, The evaporation rate of ZnS is 0.6 nm / s, the evaporation rate of YF3 is 0.5 nm / s, and the evaporation rate of Ge is 0.4 nm / s.

8. The method for preparing a silicon-based infrared long-wave high-transmittance antireflection film system according to claim 1, characterized in that: In step S4, The thickness of the first Ge film layer is 263.78nm. The thickness of the second ZnS film layer is 350.24nm. The thickness of the third Ge film layer is 219.33nm. The thickness of the fourth ZnS film layer is 500nm. The thickness of the fifth YF3 film layer is 732.65nm. The thickness of the sixth ZnS film layer is 265nm; In step S4, the crystal oscillator method is used to monitor the film thickness using the corresponding crystal oscillator of the multiple crystal oscillators of the crystal controller. After the ion source is cleaned, the crystal controller controls the new crystal oscillator of the multiple crystal oscillators to work accordingly, and the crystal oscillator frequency is 6 MHz.

9. The method for preparing a silicon-based infrared long-wave high-transmittance antireflection film system according to claim 1, characterized in that: In step S4, For the Ge film layer, the ion source is a Hall ion source, and the ion source parameters for auxiliary deposition are: neutralization current 0.5A, neutralization gas flow 8sccm, anode voltage 80V, anode current 0.7A, and argon gas flow 100%; For the ZnS film layer, the ion source is a Hall ion source, and the ion source parameters for auxiliary deposition are: neutralization current 0.5A, neutralization gas flow 8sccm, anode voltage 100V, anode current 1A, and argon gas flow 100%; For the YF3 film layer, the ion source is a Hall ion source, and the ion source parameters for auxiliary deposition are: neutralization current 0.6A, neutralization gas flow rate 8sccm, anode voltage 130V, anode current 1.3A, and argon gas flow rate 100%.

10. The method for preparing a silicon-based infrared long-wave high-transmittance antireflection film system according to claim 1, characterized in that: In step S5, after the plating is completed, the cavity is kept at a constant temperature of 150° C. for 5-15 minutes; In step S6, the door is opened to take out the items when the temperature drops below 100°C.

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