Magnetron sputtering coating equipment of integrated measuring device and application method of magnetron sputtering coating equipment

Abstract

The invention discloses magnetron sputtering coating equipment integrated with a measuring device and an application method of the magnetron sputtering coating equipment, and particularly relates to the technical field of thin film deposition. The magnetron sputtering coating equipment comprises a process main chamber, a sample introduction chamber, a vacuum transmission cavity, a front supporting frame, a rear supporting frame, a wafer conveying device, a stress measuring instrument, a film thickness measuring instrument and a control system; the process main chamber and the sample introduction chamber are fixedly mounted at the top of the front support frame, the process main chamber and the vacuum transmission chamber are fixedly mounted on two sides of the sample introduction chamber respectively, the stress measuring instrument, the film thickness measuring instrument and the control system are fixedly mounted on the inner wall of the rear support frame, and the wafer conveying device is fixedly mounted in the rear support frame. According to the equipment disclosed by the invention, multi-target co-sputtering film formation and ion source auxiliary sputtering film formation of wafers of 8 inches and below can be realized; the automatic transmission of the wafer can be realized, the coating equipment and the measuring device are controlled through a preset system, and the stress measurement before and after film formation, the film thickness measurement and the calculation of the film stress are realized.

Description

Technical Field

[0001] The present invention relates to the technical field of thin film deposition, and more specifically, to a magnetron sputtering coating device with an integrated measuring device and an application method thereof. Background Art

[0002] It is known that thin film deposition equipment is roughly divided into physical vapor deposition equipment and chemical vapor deposition equipment. Physical vapor deposition is a technology that uses physical methods to vaporize materials into gaseous atoms, molecules or ionize them into ions under vacuum conditions, and deposits them on the surface of the substrate through plasma. Magnetron sputtering technology is a high-efficiency physical vapor deposition equipment because it has the advantages of high speed, low temperature and low damage and is widely used in semiconductors, microelectronics, aerospace, solar energy and other industrial occasions.

[0003] Among them, in the process of thin film preparation by magnetron sputtering equipment, film thickness and uniformity are important indicators for evaluating film quality; because after the thin film is deposited on the surface of the wafer, the film layer usually produces a certain internal stress, and the internal stress of the film layer formed by the wafer is also an important parameter for evaluating the stability and reliability of the thin film; therefore, it is necessary to measure the film thickness and uniformity, as well as the internal stress of the film layer.

[0004] Among them, under the existing equipment and technical conditions, the measurement of film thickness and uniformity, and the internal stress of the film layer are usually carried out in different measuring devices or instruments respectively; and the magnetron sputtering coating equipment and related measuring devices or instruments are usually equipment produced by different manufacturers, and then the wafer needs to be manually taken out of the equipment after the coating is completed, and transferred to the measuring device or instrument for measurement. The measurement of the internal stress of the film layer requires the measurement of the wafer before and after coating, which is more complicated.

[0005] However, when the above-mentioned equipment is actually used, the wafer is taken out from the vacuum environment of the magnetron sputtering coating equipment and is inevitably contaminated by debris in the non-vacuum state, which seriously affects the yield rate of wafer coating. Therefore, a magnetron sputtering coating equipment with an integrated measuring device and an application method thereof are proposed as a further improvement. Summary of the invention

[0006] In order to overcome the above-mentioned defects of the prior art, an embodiment of the present invention provides a magnetron sputtering coating device with an integrated measuring device and an application method thereof to solve the problems raised in the above-mentioned background technology.

[0007] To achieve the above object, the present invention provides the following technical solution: a magnetron sputtering coating device with an integrated measuring device, the magnetron sputtering coating device comprising: a process main chamber, a sample feeding chamber, a vacuum transmission chamber, a front support frame, a rear support frame, a wafer conveying device, a stress measuring instrument, a film thickness measuring instrument and a control system,

[0008] The main process chamber and the injection chamber are both fixedly mounted on the top of the front support frame, the main process chamber and the vacuum transmission chamber are respectively fixedly mounted on both sides of the injection chamber, the vacuum transmission chamber is fixedly connected to the injection chamber through a sealing rubber ring, one end of the rear support frame is fixedly connected to the front support frame near the injection chamber, the stress measuring instrument and the film thickness measuring instrument are both fixedly mounted on the inner wall of the top of the rear support frame, the control system is fixedly mounted on the inner wall of the bottom of the rear support frame, the wafer conveying device is fixedly mounted inside the rear support frame, and one end of the wafer conveying device is close to the injection chamber.

[0009] Furthermore, the process main chamber comprises: a chamber housing, a vacuum gauge, a cathode, a first wafer holder, an ion source, a holder drive system and a first transmission gate valve.

[0010] The vacuum gauge and the first transfer gate valve are fixedly mounted on one side of the chamber shell, the ion source is fixedly mounted on the other side of the chamber shell, several cathodes are fixedly mounted on the top of the chamber shell, the bracket drive system is fixedly mounted on the bottom of the chamber shell, the first wafer bracket is arranged inside the chamber shell, and a wafer is placed on the upper surface of the first wafer bracket.

[0011] Furthermore, the bracket driving system includes: a lifting block, a lifting driving motor, a bracket rotating shaft and a rotating shaft driving motor,

[0012] The lifting drive motor used to drive the lifting block to lift is fixedly installed at the bottom of the chamber shell through a fixing frame, and the lifting drive motor is transmission-connected to the lifting block;

[0013] The rotating shaft driving motor for driving the first wafer holder to rotate is fixedly installed at the bottom of the lifting block, and the output shaft of the rotating shaft driving motor is fixedly connected to one end of the holder rotating shaft through a coupling, and the other end of the holder rotating shaft passing through the chamber shell is fixedly connected to the first wafer holder, and a wafer is placed on the upper surface of the first wafer holder.

[0014] Furthermore, the injection chamber comprises: a square chamber, a sealing door, a second wafer holder, a lifting guide rail, a lifting drive mechanism and a second transmission gate valve.

[0015] The sealing door is sealed and connected to the square chamber via a rubber ring, the lifting guide rail is fixedly mounted on the inner wall at the top of the square chamber, the second wafer holder is arranged on the lifting guide rail, the lifting drive mechanism for driving the second wafer holder to lift and lower is arranged on the outer wall at the top of the square chamber, and the second transmission gate valve is fixedly mounted on the square chamber.

[0016] Furthermore, the second wafer bracket includes: a bracket bottom plate, a plurality of wafer brackets and a wafer transfer bracket,

[0017] The wafer transfer tray is fixedly mounted on the bottom of the side of the bracket bottom plate, and a plurality of wafer trays are fixedly mounted on the side of the bracket bottom plate and are all located above the wafer transfer tray.

[0018] Furthermore, the vacuum transmission chamber comprises: a long chamber, a sealed upper cover, a vacuum mechanical arm and a notch positioning mechanism;

[0019] The sealing upper cover is fixedly installed on the top of the long chamber, the vacuum robot arm is fixedly installed in the long chamber, a vacuum wafer holder is fixedly installed on the end of the vacuum robot arm, and the notch positioning mechanism is arranged on the long chamber and the sealing upper cover.

[0020] Further, the notch positioning mechanism includes: a wafer turntable, a turntable rotating motor, a turntable lifting motor, a lifting slider, an upper sensor and a lower sensor;

[0021] The upper sensor and the lower sensor are respectively fixed to the sealing upper cover and the outer wall of the bottom of the long chamber, and the wafer turntable is located inside the long chamber.

[0022] The turntable rotating motor for driving the wafer turntable to rotate is fixedly installed at the bottom of the lifting slider, and the turntable lifting motor for driving the lifting slider to lift is fixedly installed at the bottom of the long chamber through a fixing frame; the turntable lifting motor is transmission-connected to the lifting slider;

[0023] The output shaft of the turntable rotating motor is fixedly connected to the wafer turntable through a coupling.

[0024] Furthermore, the wafer conveying device comprises: an X-axis displacement platform, a Y-axis displacement platform and an atmospheric wafer support.

[0025] The X-axis displacement platform includes: an X-axis drive motor, an X-axis transmission mechanism, an X-axis slide table and an X-axis positioning sensor.

[0026] The Y-axis displacement platform includes: a Y-axis drive motor, a Y-axis transmission mechanism, a Y-axis slide and a Y-axis positioning sensor;

[0027] The X-axis drive motor is connected to the X-axis slide via an X-axis transmission mechanism; the Y-axis displacement platform is fixedly mounted on the X-axis slide;

[0028] The Y-axis drive motor is connected to the Y-axis slide table through the Y-axis transmission mechanism; the atmospheric wafer support is fixedly mounted on the Y-axis slide table;

[0029] The X-axis positioning sensor for positioning the atmospheric wafer support hand position and the Y-axis positioning sensor for positioning the atmospheric wafer support hand position are fixedly mounted on the X-axis slide and the Y-axis slide respectively.

[0030] An application method of a magnetron sputtering coating device, including the magnetron sputtering coating device with an integrated measuring device, the application method comprising the following steps:

[0031] S1: The operator places the wafer on the wafer holder of the second wafer holder in the sample chamber. At this time, the vacuum wafer holder of the vacuum robot arm is in the initial position; the second transmission plug valve channel is closed, and the sample chamber starts to be evacuated; the predetermined vacuum degree chamber is reached;

[0032] S2: The vacuum robot arm obtains the wafer: The vacuum robot arm begins to extend forward, and stops the vacuum wafer support hand under the center of the wafer support, and then the second wafer support bracket descends to place the wafer on the vacuum wafer support hand, and the wafer is now separated from the second wafer support bracket;

[0033] S3: Positioning the characteristic notch of the wafer: the vacuum robot arm retracts, brings the wafer into the vacuum transfer chamber and transfers it to the top of the wafer turntable of the notch positioning mechanism; then, the turntable lifting motor drives the wafer turntable to rise and pass through the vacuum wafer support until the wafer is lifted and separated from the vacuum wafer support; then, the turntable rotation motor drives the wafer turntable to rotate and position the characteristic notch on the wafer to the preset position; after the positioning is completed, the turntable lifting motor drives the wafer turntable to descend and put the wafer back into the vacuum wafer support; finally, the vacuum robot arm extends forward and parks the wafer after notch positioning above the wafer transfer tray of the sample chamber; then the second wafer holder rises to place the wafer into the wafer transfer tray:

[0034] S4: The injection chamber first automatically performs a vacuum breaking operation to restore the air pressure in the injection chamber to the atmospheric state, and after the second transmission plug valve channel is opened, enter S5;

[0035] S5: The atmospheric wafer holder obtains the wafer: the X-axis drive motor of the wafer conveyor drives the atmospheric wafer holder to extend into the sample chamber, and parks the atmospheric wafer holder under the center of the wafer transfer holder; then, the second wafer holder descends to place the wafer on the atmospheric wafer holder; then, the X-axis drive motor drives the atmospheric wafer holder to take the wafer out of the sample chamber and bring it into the rear support frame;

[0036] S6: Measuring and recording the wafer film thickness and film internal stress: The control system controls the X-axis drive motor and the Y-axis drive motor to drive the atmospheric wafer support to move according to the atmospheric wafer support position fed back by the X-axis positioning sensor and the Y-axis positioning sensor, and according to the operation flow preset by the control system, the wafer is sequentially transferred to the measurement area of ​​the stress measuring instrument and the film thickness measuring instrument, and the wafer film thickness and film internal stress are measured; at the same time, the control system records the measurement position and measurement data;

[0037] S7: After the measurement is completed, the X-axis drive motor of the wafer conveyor drives the atmospheric wafer holder to send the measured wafer back to the sample loading chamber and park it above the second wafer holder in the sample loading chamber; then, the second wafer holder rises to place the wafer in the wafer transfer holder;

[0038] S8: The second transmission plug valve channel is closed, and the injection chamber begins to be evacuated; after reaching a predetermined vacuum degree, S9 begins;

[0039] S9: The first wafer holder obtains the wafer: the vacuum robot arm starts to extend forward, and stops the vacuum wafer holder under the center of the wafer transfer holder. As the second wafer holder descends, the wafer is placed on the vacuum wafer holder, and then the vacuum robot arm continues to move forward, the first transfer plug valve opens, and the wafer on the vacuum wafer holder is sent to the main process chamber; the lifting drive motor of the bracket drive system drives the first wafer holder to rise and pass through the vacuum wafer holder until the wafer is lifted; the vacuum robot arm retracts into the injection chamber, and the first transfer plug valve channel is closed. At this time, the injection chamber and the main process chamber are in a separated and isolated state; then, the main process chamber continues to be evacuated, and after the main process chamber reaches a higher vacuum degree, the magnetron sputtering coating process is carried out;

[0040] S10: After the coating is completed, the first transmission plug valve channel is opened, the vacuum robot arm is extended into the main process chamber, and the lifting drive motor drives the first wafer holder to descend so that the coated wafer is placed back on the vacuum wafer holder; the vacuum robot arm is retracted;

[0041] S11: Execute S3, S4, S5 and S6 again in sequence; obtain the film thickness and film internal stress of the wafer after coating;

[0042] After the measurement is completed again, the X-axis drive motor of the wafer conveyor drives the atmospheric wafer holder to convey the measured wafer back to the sample chamber again, and park it above the second wafer holder in the sample chamber; then, the second wafer holder rises to place the wafer in the wafer holder;

[0043] S12: Compare the internal stress of the wafer before and after coating, and feed back the comparison result to the control system; provide the relevant data to the operator, and the operator adjusts the ion source control parameters and process-related parameters according to the data.

[0044] Further, in said S3: the outer wall of the long chamber is provided with transparent glass, the upper sensor and the lower sensor form a group of opposing sensors and pass through the glass to form a scanning area in the long chamber;

[0045] When the wafer turntable rises to lift the wafer, the edge of the wafer is located in the scanning area of ​​the said shooting sensor, and the turntable rotation motor drives the wafer to rotate by driving the wafer turntable to rotate; when the upper sensor and the lower sensor scan the notch of the wafer and feed back this position to the control system, the wafer turntable stops rotating and records the notch of the wafer for positioning; then the notch of the wafer is rotated to the specified position according to the system preset.

[0046] Technical effects and advantages of the present invention:

[0047] 1. Compared with the prior art, the magnetron sputtering coating equipment with an integrated measuring device disclosed in the present invention can realize multi-target co-sputtering film formation and ion source assisted sputtering film formation for wafers of 8 inches or less; and can realize automatic transmission of wafers between the measuring equipment and the coating equipment. The coating equipment and the measuring device are controlled by a preset system to realize stress measurement before and after film formation, film thickness measurement, and analyze and calculate film stress.

[0048] 2. Compared with the prior art, the present invention realizes a high degree of integration of magnetron sputtering coating equipment and measuring devices, and provides a one-stop solution for magnetron sputtering coating, film layer measurement and analysis; realizes automatic transmission of wafers in vacuum equipment and in atmospheric environment, and realizes automatic switching and transition between vacuum environment and atmospheric environment; uses an ion source to pre-clean the wafer, and the ion source can greatly improve the bonding strength between the film and the substrate, while the hardness and wear and corrosion resistance of the film itself will also be improved, thereby improving the density and stability of the ion source-assisted sputtering film.

[0049] 3. By setting up the notch positioning mechanism, the notch on the wafer can be automatically detected and aligned, and the circumferential position of the wafer can be accurately located; multiple wafers can be placed at one time using the loading chamber of the coating equipment, reducing personnel operations and improving work efficiency; among them, avoiding taking the wafer out of the vacuum environment of the magnetron sputtering coating equipment due to measurement reduces the risk of the wafer being contaminated by debris in a non-vacuum state, and improves the yield rate of wafer coating. BRIEF DESCRIPTION OF THE DRAWINGS

[0050] Figure 1 It is a schematic diagram of the overall structure of the present invention.

[0051] Figure 2 It is a schematic diagram of the interior of the rear support frame of the present invention.

[0052] Figure 3 It is a schematic diagram of the structure of the main chamber of the process of the present invention.

[0053] Figure 4 It is a structural schematic diagram of the sample injection chamber of the present invention.

[0054] Figure 5Schematic diagram of the notch positioning mechanism of the present invention.

[0055] Figure 6 It is a schematic structural diagram of the wafer conveying device of the present invention.

[0056] Figure 7 It is a schematic diagram of the wafer being transported inside the main process chamber, the injection chamber, the vacuum transfer chamber and the wafer conveying device of the present invention.

[0057] Figure 8 FIG. 4 is a schematic diagram of a second wafer holder of the present invention.

[0058] Fig. 9 A schematic diagram of a wafer.

[0059] The accompanying drawings are marked as follows:

[0060] 1. Main process chamber;

[0061] 11. Chamber housing; 12. Vacuum gauge; 13. Cathode; 14. First wafer holder; 15. Ion source;

[0062] 16. Bracket drive system;

[0063] 161. lifting block; 162. lifting drive motor; 163. bracket rotating shaft;

[0064] 164. Rotating shaft drive motor;

[0065] 17. First transmission gate valve; 18. Wafer;

[0066] 2. Sample injection room;

[0067] 21. Square chamber; 22. Sealed door;

[0068] 23. Second wafer bracket; 231. Bracket bottom plate; 232. Wafer bracket; 233. Wafer transfer bracket;

[0069] 24. Lifting guide rail;

[0070] 25. Lifting drive mechanism; 26. Second transmission gate valve;

[0071] 3. Vacuum transmission chamber;

[0072] 31. Long chamber; 32. Sealed cover; 33. Vacuum robot arm; 331. Vacuum wafer support;

[0073] 34. Notch positioning mechanism;

[0074] 341. Wafer rotating table; 342. Turntable rotating motor; 343. Turntable lifting motor;

[0075] 344, lifting slider; 345, upper sensor; 346, lower sensor;

[0076] 4. Front support frame;

[0077] 5. Rear support frame;

[0078] 6. Wafer conveying device;

[0079] 61. X-axis displacement platform;

[0080] 611, X-axis driving motor; 612, X-axis transmission mechanism;

[0081] 613, X-axis slide; 614, X-axis positioning sensor;

[0082] 62. Y-axis displacement platform;

[0083] 621, Y-axis driving motor; 622, Y-axis transmission mechanism;

[0084] 623, Y-axis slide; 624, Y-axis positioning sensor;

[0085] 63. Atmospheric wafer support;

[0086] 7. Stress measuring instrument;

[0087] 8. Film thickness measuring instrument;

[0088] 9. Control system. DETAILED DESCRIPTION

[0089] In order to make the purpose, technical solution and advantages of the present invention more clearly understood, the present invention is further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention and are not intended to limit the present invention.

[0090] As attached Figure 1-9 A magnetron sputtering coating device with an integrated measuring device is shown, the magnetron sputtering coating device comprising: a main process chamber 1, a sample injection chamber 2, a vacuum transmission chamber 3, a front support frame 4, a rear support frame 5, a wafer conveying device 6, a stress measuring instrument 7, a film thickness measuring instrument 8 and a control system 9,

[0091] The main process chamber 1 and the injection chamber 2 are both fixedly mounted on the top of the front support frame 4, the main process chamber 1 and the vacuum transmission chamber 3 are respectively fixedly mounted on both sides of the injection chamber 2, the vacuum transmission chamber 3 is fixedly connected to the injection chamber 2 through a sealing rubber ring, one end of the rear support frame 5 is fixedly connected to the front support frame 4 near the injection chamber 2, the stress measuring instrument 7 and the film thickness measuring instrument 8 are both fixedly mounted on the inner wall of the top of the rear support frame 5, the control system 9 is fixedly mounted on the inner wall of the bottom of the rear support frame 5, and the wafer conveying device 6 is fixedly mounted inside the rear support frame 5, and one end of the wafer conveying device 6 is close to the injection chamber 2.

[0092] The main process chamber 1 is a chamber for magnetron sputtering coating; the main process chamber 1 and the injection chamber 2 are both equipped with a vacuum pumping system;

[0093] Among them, the front support frame 4 is used to support and fix the main process chamber 1, the injection chamber 2, and the vacuum transmission chamber 3; and the rear support frame 5 is used to support and fix the wafer conveying device 6, the stress measuring instrument 7, and the film thickness measuring instrument 8;

[0094] In a preferred embodiment, as shown in the attached Figure 1-9 As shown, the process main chamber 1 includes: a chamber housing 11, a vacuum gauge 12, a cathode 13, a first wafer holder 14, an ion source 15, a holder driving system 16 and a first transmission gate valve 17.

[0095] The vacuum gauge 12 and the first transmission gate valve 17 are fixedly mounted on one side of the chamber housing 11, the ion source 15 is fixedly mounted on the other side of the chamber housing 11, a plurality of cathodes 13 are fixedly mounted on the top of the chamber housing 11, and the bracket driving system 16 is fixedly mounted on the bottom of the chamber housing 11.

[0096] Wherein, the bracket driving system 16 is fixed on the flange of the chamber housing 11;

[0097] The first wafer holder 14 is disposed inside the chamber housing 11 , and a wafer 18 is placed on the upper surface of the first wafer holder 14 .

[0098] Among them, the vacuum gauge 12 is used to measure the vacuum inside the chamber housing 11 and feed back to the control system 9, and the magnetron sputtering target is installed on the cathode 13;

[0099] Embodiment: A total of 5 cathodes 13 are installed on the chamber shell 11 of the process main chamber 1; thus, single-target sputtering film formation and multi-target co-sputtering film formation can be realized according to the coating requirements; and the first wafer bracket 14 is used to place the wafer 18, and adopts an inverted cone guide structure;

[0100] When the wafer 18 is placed from top to bottom on the first wafer holder 14 , the first wafer holder 14 with the inverted cone guide structure is automatically aligned to the center, which can be used to calibrate the position deviation of the wafer 18 caused by multiple transfer processes.

[0101] In a preferred embodiment, as shown in the attached Figure 1-9 As shown, the bracket driving system 16 includes: a lifting block 161, a lifting driving motor 162, a bracket rotating shaft 163 and a rotating shaft driving motor 164.

[0102] A lifting drive motor 162 for driving the lifting block 161 to lift is fixedly installed at the bottom of the chamber housing 11 through a fixing frame, and the lifting drive motor 162 is transmission-connected to the lifting block 161;

[0103] The rotating shaft driving motor 164 for driving the first wafer holder 14 to rotate is fixedly installed at the bottom of the lifting block 161, and the output shaft of the rotating shaft driving motor 164 is fixedly connected to one end of the holder rotating shaft 163 through a coupling, and the other end of the holder rotating shaft 163 passing through the chamber shell 11 is fixedly connected to the first wafer holder 14.

[0104] Among them, the rotating shaft driving motor 164 drives the bracket rotating shaft 163 to rotate through the coupling, and then drives the first wafer bracket 14 and the wafer 18 to rotate together; and the lifting driving motor 162 drives the lifting block 161 up and down through the transmission system, and the bracket rotating shaft 163 and the rotating shaft driving motor 164 are fixed on the lifting block 161 at the same time, so that the lifting driving motor 162 can drive the first wafer bracket 14 and the wafer 18 to achieve lifting.

[0105] Among them, the transmission system can be selected as follows: the lifting drive motor 162 drives the screw to rotate, and the lifting block 161 is threadedly connected with the screw, and then the screw rotates to drive the lifting block 161 to move up and down to achieve transmission;

[0106] Among them, the lifting action of the first wafer holder 14 cooperates with the vacuum robot 33 of the vacuum transmission chamber 3 to complete the automatic placement of the wafer 18. During the magnetron sputtering coating process, the first wafer holder 14 drives the wafer 18 to rotate at a constant speed, which can improve the uniformity of the film layer.

[0107] The ion source 15 can pre-clean the wafer 18 before sputtering coating, and thus play a role in assisting deposition during the sputtering coating process; the ion source 15 includes: an ion source gun head and an ion source controller; and the ion source gun head is fixed on the flange of the chamber housing 11;

[0108] Among them, when the wafer 18 is automatically transferred from the sample injection chamber 2 to the main process chamber 1, the ion source controller starts to start the ion source 15 to emit an ion beam to bombard the surface of the wafer 18 to remove surface contamination of the wafer 18, such as water, adsorbed gas, and hydrocarbon residues; after the ion source 15 completes the cleaning of the wafer 18, the system starts the magnetron sputtering coating process; during the sputtering coating process, the ion beam emitted by the ion source 15 acts on the surface of the wafer 18 to bombard the growing film, which adds energy to the outermost atomic layer when forming the film, thereby affecting the hardness, density and surface morphology of the microstructure, so as to achieve better bonding and adhesion, and obtain a dense film with more uniform grains and smaller gaps.

[0109] In a preferred embodiment, as shown in the attached Figure 1-9 As shown, the sample injection chamber 2 includes: a square chamber 21, a sealing door 22, a second wafer holder 23, a lifting guide rail 24, a lifting drive mechanism 25 and a second transmission gate valve 26.

[0110] The sealing door 22 is sealed and connected to the square chamber 21 through a rubber ring. The lifting guide rail 24 is fixedly installed on the inner wall at the top of the square chamber 21. The second wafer holder 23 is arranged on the lifting guide rail 24. The lifting driving mechanism 25 for driving the second wafer holder 23 to lift and lower is arranged on the outer wall at the top of the square chamber 21. The second transmission gate valve 26 is fixedly installed on the square chamber 21.

[0111] The lifting drive mechanism 25 is used to drive the second wafer holder 23 to move up and down along the lifting rail, thereby driving the wafer holder 232 of the second wafer holder 23 and the wafer 18 held in the wafer transfer holder 233 to move up and down;

[0112] Embodiment: The lifting drive mechanism 25 can drive the bolt to rotate through the motor, so that the lifting body threadedly connected to the bolt is lifted and lowered, and then the lifting body is connected to the second wafer holder 23, and the second wafer holder 23 is lifted and lowered.

[0113] In a preferred embodiment, as shown in the attached Figure 1-9 As shown, the second wafer bracket 23 includes: a bracket base plate 231, a plurality of wafer brackets 232 and a wafer transfer bracket 233.

[0114] The wafer transfer tray 233 is fixedly mounted on the bottom of the side of the bracket bottom plate 231 , and a plurality of wafer trays 232 are fixedly mounted on the side of the bracket bottom plate 231 and are all located above the wafer transfer tray 233 .

[0115] Among them, the embodiment: 6 layers of wafer trays 232 and 1 layer of wafer transfer tray 233; and the wafer transfer tray 233 is located at the bottom layer, and adopts a four-claw structure, the wafer 18 is hooked in the wafer transfer tray 233, so that the wafer 18 can be taken and placed from the front, back, left and right sides;

[0116] In a preferred embodiment, as shown in the attached Figure 1-9 As shown, the vacuum transfer chamber 3 includes: a long chamber 31, a sealing upper cover 32, a vacuum robot arm 33 and a notch positioning mechanism 34;

[0117] The sealed upper cover 32 is fixedly installed on the top of the long chamber 31 , the vacuum robot arm 33 is fixedly installed in the long chamber 31 , a vacuum wafer holder 331 is fixedly installed at the end of the vacuum robot arm 33 , and the notch positioning mechanism 34 is arranged on the long chamber 31 and the sealed upper cover 32 .

[0118] Among them, since the vacuum transmission chamber 3 is connected to the sample injection chamber 2 through a sealing rubber ring, a vacuum chamber is formed and is equipped with a vacuum pumping system; since the vacuum robot arm 33 is installed in the long chamber 31, the vacuum wafer holder 331 of the vacuum robot arm 33 can take out the wafer 18 in the wafer holder 232, transfer it to the wafer transfer holder 233, or transfer it to the first wafer holder 14 in the process main chamber 1.

[0119] In a preferred embodiment, as shown in the attached Figure 1-9 As shown, the notch positioning mechanism 34 includes: a wafer turntable 341, a turntable rotating motor 342, a turntable lifting motor 343, a lifting slider 344, an upper sensor 345 and a lower sensor 346;

[0120] The upper sensor 345 and the lower sensor 346 are fixed to the sealing upper cover 32 and the outer wall of the bottom of the long chamber 31 respectively. The wafer turntable 341 is located inside the long chamber 31.

[0121] The turntable rotating motor 342 for driving the wafer turntable 341 to rotate is fixedly installed at the bottom of the lifting slider 344, and the turntable lifting motor 343 for driving the lifting slider 344 to rise and fall is fixedly installed at the bottom of the long chamber 31 through a fixing frame; the turntable lifting motor 343 is in transmission connection with the lifting slider 344;

[0122] The output shaft of the turntable rotating motor 342 is fixedly connected to the wafer turntable 341 via a coupling.

[0123] In a preferred embodiment, as shown in the attached Figure 1-9 As shown, the wafer conveying device 6 includes: an X-axis displacement platform 61, a Y-axis displacement platform 62 and an atmospheric wafer support 63.

[0124] The X-axis displacement platform 61 includes: an X-axis driving motor 611, an X-axis transmission mechanism 612, an X-axis slide table 613 and an X-axis positioning sensor 614.

[0125] The Y-axis displacement platform 62 includes: a Y-axis driving motor 621, a Y-axis transmission mechanism 622, a Y-axis slide 623 and a Y-axis positioning sensor 624;

[0126] The X-axis driving motor 611 is connected to the X-axis slide 613 through the X-axis transmission mechanism 612; the Y-axis displacement platform 62 is fixedly installed on the X-axis slide 613;

[0127] The Y-axis driving motor 621 is connected to the Y-axis slide 623 through the Y-axis transmission mechanism 622; the atmospheric wafer support 63 is fixedly installed on the Y-axis slide 623;

[0128] The X-axis positioning sensor 614 for positioning the atmospheric wafer support hand 63 and the Y-axis positioning sensor 624 for positioning the atmospheric wafer support hand 63 are fixedly mounted on the X-axis slide 613 and the Y-axis slide 623 respectively.

[0129] Among them, the Y-axis driving motor 621 drives the Y-axis slide 623 to slide along the Y-axis direction through the Y-axis transmission mechanism 622; the Y-axis displacement platform 62 is fixed on the X-axis slide 613 of the X-axis displacement platform 61 as a whole; and the X-axis driving motor 611 drives the X-axis slide 613 to slide back and forth along the X-axis direction through the X-axis transmission mechanism 612, thereby driving the atmospheric wafer support 63 to move along the X-axis;

[0130] Among them, the wafer conveying device 6 takes out the wafer 18 on the second wafer holder 23 of the sampling chamber 2, and conveys it to the measuring platform or measuring area of ​​the stress measuring instrument 7 and the film thickness measuring instrument 8 in turn to complete the measurement of the film thickness and internal stress of the wafer 18.

[0131] An application method of a magnetron sputtering coating device, including a magnetron sputtering coating device with an integrated measuring device, the application method comprising the following steps:

[0132] S1: The operator places the wafer 18 on the wafer holder 232 of the second wafer holder 23 in the sample injection chamber 2. At this time, the vacuum wafer holder 331 of the vacuum robot 33 is in the initial position; the second transmission plug valve 26 is closed, and the sample injection chamber 2 starts to be evacuated; the predetermined vacuum degree is reached;

[0133] S2: The vacuum robot arm 33 obtains the wafer 18: The vacuum robot arm 33 begins to extend forward, and stops the vacuum wafer support hand 331 below the center of the wafer support 232, and then the second wafer support 23 descends to place the wafer 18 on the vacuum wafer support hand 331, and at this time the wafer 18 is separated from the second wafer support 23;

[0134] S3: Feature notch positioning of wafer 18: vacuum robot 33 retracts, brings wafer 18 into vacuum transfer chamber 3 and transfers it to directly above wafer turntable 341 of notch positioning mechanism 34; then, turntable lifting motor 343 drives wafer turntable 341 to rise and pass through vacuum wafer support hand 331 until wafer 18 is lifted and separated from vacuum wafer support hand 331; then, turntable rotating motor 342 rotates and positions feature notch on wafer 18 to a preset position by driving wafer turntable 341 to rotate; after positioning is completed, turntable lifting motor 343 drives wafer turntable 341 to descend and put wafer 18 back to vacuum wafer support hand 331; finally, vacuum robot 33 extends forward and parks wafer 18 after notch positioning above wafer transfer tray 233 of sample injection chamber 2; then second wafer holder 23 rises to place wafer 18 into wafer transfer tray 233:

[0135] S4: the injection chamber 2 automatically performs a vacuum breaking operation to restore the air pressure in the injection chamber 2 to the atmospheric state, and after the second transmission gate valve 26 channel is opened, enter S5;

[0136] S5: The atmospheric wafer support hand 63 obtains the wafer 18: The X-axis driving motor 611 of the wafer conveying device 6 drives the atmospheric wafer support hand 63 to extend into the sample loading chamber 2, and parks the atmospheric wafer support hand 63 below the center of the wafer transfer tray 233; then, the second wafer holder 23 descends to place the wafer 18 on the atmospheric wafer support hand 63; then, the X-axis driving motor 611 drives the atmospheric wafer support hand 63 to take the wafer 18 out of the sample loading chamber 2 and bring it into the rear support frame 5;

[0137] S6: Measuring and recording the film thickness and internal stress of the wafer 18: the control system 9 controls the X-axis drive motor 611 and the Y-axis drive motor 621 to drive the atmospheric wafer support 63 to move according to the position of the atmospheric wafer support 63 fed back by the X-axis positioning sensor 614 and the Y-axis positioning sensor 624, and according to the operation flow preset by the control system 9, the wafer 18 is sequentially transferred to the measuring areas of the stress measuring instrument 7 and the film thickness measuring instrument 8, and the film thickness and internal stress of the wafer 18 are measured; at the same time, the control system 9 records the measuring position and the measuring data;

[0138] S7: After the measurement is completed, the X-axis drive motor 611 of the wafer conveying device 6 drives the atmospheric wafer support hand 63 to return the measured wafer 18 to the sample loading chamber 2, and park it above the second wafer support 23 of the sample loading chamber 2; then, the second wafer support 23 rises to place the wafer 18 in the wafer transfer support 233;

[0139] S8: The second transmission gate valve 26 is closed, and the injection chamber 2 starts to be evacuated; after reaching a predetermined vacuum degree, S9 starts;

[0140] S9: The first wafer holder 14 obtains the wafer 18: The vacuum robot arm 33 begins to extend forward, and parks the vacuum wafer support hand 331 under the center of the wafer transfer holder 233. As the second wafer holder 23 descends, the wafer 18 is placed on the vacuum wafer support hand 331. Then the vacuum robot arm 33 continues to move forward, and the first transmission plug valve 17 opens, and the wafer 18 on the vacuum wafer support hand 331 is sent to the process main chamber 1; the lifting drive motor 162 of the bracket drive system 16 drives the first wafer holder 14 to rise and pass through the vacuum wafer support hand 331 until the wafer 18 is lifted; the vacuum robot arm 33 retracts into the injection chamber 2, and the first transmission plug valve 17 channel is closed. At this time, the injection chamber 2 and the process main chamber 1 are in a separated and isolated state; then, the process main chamber 1 continues to be evacuated, and after the process main chamber 1 reaches a higher vacuum degree, the magnetron sputtering coating process is carried out;

[0141] S10: After the coating is completed, the first transmission gate valve 17 is opened, the vacuum robot arm 33 is extended into the main process chamber 1, and the lifting drive motor 162 drives the first wafer holder 14 to descend so that the coated wafer 18 is put back into the vacuum wafer holder 331; the vacuum robot arm 33 is retracted;

[0142] S11: Execute S3, S4, S5 and S6 again in sequence to obtain the film thickness and internal stress of the film of the wafer 18 after coating;

[0143] After the measurement is completed again, the X-axis drive motor 611 of the wafer conveying device 6 drives the atmospheric wafer support hand 63 to convey the measured wafer 18 back to the sample loading chamber 2 again, and park it above the second wafer support 23 of the sample loading chamber 2; then, the second wafer support 23 rises to place the wafer 18 in the wafer support 232;

[0144] S12: Compare the internal stress of the wafer 18 before and after coating, and feed back the comparison result to the control system 9; provide the relevant data to the operator, and the operator adjusts the control parameters of the ion source 15 and process-related parameters according to the data.

[0145] In a preferred embodiment, as shown in the attached Figure 1-9 As shown, in S3: the outer wall of the long chamber 31 is provided with transparent glass, the upper sensor 345 and the lower sensor 346 form a group of opposing sensors and pass through the glass to form a scanning area in the long chamber 31;

[0146] When the wafer turntable 341 rises to lift the wafer 18, the edge of the wafer 18 is located in the scanning area of ​​the corresponding sensor, and the turntable rotation motor 342 drives the wafer 18 to rotate by driving the wafer turntable 341 to rotate; when the upper sensor 345 and the lower sensor 346 scan the notch of the wafer 18 and feed back this position to the control system 9, the wafer turntable 341 stops rotating and records the notch of the wafer 18 for positioning; then the notch of the wafer 18 is rotated to the specified position according to the system preset.

[0147] It should be noted that, in this article, relational terms such as first and second, etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "include", "comprise" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device.

[0148] Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that various changes, modifications, substitutions and variations may be made to the embodiments without departing from the principles and spirit of the present invention, and that the scope of the present invention is defined by the appended claims and their equivalents.

Claims

1. A magnetron sputtering coating device with an integrated measuring device, characterized in that: The magnetron sputtering coating equipment comprises: a main process chamber (1), a sample injection chamber (2), a vacuum transmission chamber (3), a front support frame (4), a rear support frame (5), a wafer conveying device (6), a stress measuring instrument (7), a film thickness measuring instrument (8) and a control system (9). The main process chamber (1) and the injection chamber (2) are both fixedly mounted on the top of the front support frame (4); the main process chamber (1) and the vacuum transmission chamber (3) are respectively fixedly mounted on both sides of the injection chamber (2); the vacuum transmission chamber (3) is fixedly connected to the injection chamber (2) via a sealing rubber ring; one end of the rear support frame (5) is fixedly connected to the front support frame (4) near the injection chamber (2); the stress measuring instrument (7) and the film thickness measuring instrument (8) are both fixedly mounted on the inner wall of the top of the rear support frame (5); the control system (9) is fixedly mounted on the inner wall of the bottom of the rear support frame (5); the wafer conveying device (6) is fixedly mounted inside the rear support frame (5); and one end of the wafer conveying device (6) is close to the injection chamber (2).

2. The magnetron sputtering coating device with integrated measuring device according to claim 1, characterized in that: The process main chamber (1) comprises: a chamber housing (11), a vacuum gauge (12), a cathode (13), a first wafer holder (14), an ion source (15), a holder driving system (16) and a first transmission gate valve (17). The vacuum gauge (12) and the first transmission gate valve (17) are fixedly mounted on one side of the chamber shell (11), the ion source (15) is fixedly mounted on the other side of the chamber shell (11), a plurality of cathodes (13) are fixedly mounted on the top of the chamber shell (11), the bracket drive system (16) is fixedly mounted on the bottom of the chamber shell (11), the first wafer bracket (14) is arranged inside the chamber shell (11), and a wafer (18) is placed on the upper surface of the first wafer bracket (14).

3. The magnetron sputtering coating device with integrated measuring device according to claim 2, characterized in that: The bracket driving system (16) comprises: a lifting block (161), a lifting driving motor (162), a bracket rotating shaft (163) and a rotating shaft driving motor (164). The lifting drive motor (162) for driving the lifting block (161) to lift is fixedly mounted on the bottom of the chamber shell (11) via a fixing frame, and the lifting drive motor (162) is drivingly connected to the lifting block (161); The rotating shaft driving motor (164) for driving the first wafer holder (14) to rotate is fixedly installed at the bottom of the lifting block (161), and the output shaft of the rotating shaft driving motor (164) is fixedly connected to one end of the holder rotating shaft (163) through a coupling, and the other end of the holder rotating shaft (163) passing through the chamber shell (11) is fixedly connected to the first wafer holder (14).

4. The magnetron sputtering coating device with integrated measuring device according to claim 1, characterized in that: The sample injection chamber (2) comprises: a square chamber (21), a sealing door (22), a second wafer holder (23), a lifting guide rail (24), a lifting drive mechanism (25) and a second transmission gate valve (26). The sealing door (22) is sealed and connected to the square chamber (21) via a rubber ring; the lifting guide rail (24) is fixedly mounted on the inner wall at the top of the square chamber (21); the second wafer holder (23) is arranged on the lifting guide rail (24); the lifting drive mechanism (25) for driving the second wafer holder (23) to lift and lower is arranged on the outer wall at the top of the square chamber (21); and the second transmission gate valve (26) is fixedly mounted on the square chamber (21).

5. The magnetron sputtering coating device with integrated measuring device according to claim 4, characterized in that: The second wafer bracket (23) comprises: a bracket base plate (231), a plurality of wafer brackets (232) and a wafer transfer bracket (233). The wafer transfer tray (233) is fixedly mounted on the bottom of the side of the bracket base plate (231), and a plurality of wafer trays (232) are fixedly mounted on the side of the bracket base plate (231) and are all located above the wafer transfer tray (233).

6. The magnetron sputtering coating device with integrated measuring device according to claim 1, characterized in that: The vacuum transmission chamber (3) comprises: an elongated chamber (31), a sealed upper cover (32), a vacuum mechanical arm (33) and a notch positioning mechanism (34); The sealing upper cover (32) is fixedly mounted on the top of the elongated chamber (31), the vacuum robot arm (33) is fixedly mounted in the elongated chamber (31), a vacuum wafer support (331) is fixedly mounted on the end of the vacuum robot arm (33), and the notch positioning mechanism (34) is arranged on the elongated chamber (31) and the sealing upper cover (32).

7. The magnetron sputtering coating device with integrated measuring device according to claim 6, characterized in that: The notch positioning mechanism (34) comprises: a wafer turntable (341), a turntable rotating motor (342), a turntable lifting motor (343), a lifting slider (344), an upper sensor (345) and a lower sensor (346); The upper sensor (345) and the lower sensor (346) are respectively fixed to the sealing upper cover (32) and the outer wall of the bottom of the elongated chamber (31); the wafer turntable (341) is located inside the elongated chamber (31); The turntable rotating motor (342) for driving the wafer turntable (341) to rotate is fixedly mounted on the bottom of the lifting slider (344); the turntable lifting motor (343) for driving the lifting slider (344) to rise and fall is fixedly mounted on the bottom of the long chamber (31) via a fixing frame; the turntable lifting motor (343) is transmission-connected to the lifting slider (344); The output shaft of the turntable rotating motor (342) is fixedly connected to the wafer turntable (341) via a coupling.

8. The magnetron sputtering coating device with integrated measuring device according to claim 1, characterized in that: The wafer conveying device (6) comprises: an X-axis displacement platform (61), a Y-axis displacement platform (62) and an atmospheric wafer support (63). The X-axis displacement platform (61) comprises: an X-axis driving motor (611), an X-axis transmission mechanism (612), an X-axis slide table (613) and an X-axis positioning sensor (614). The Y-axis displacement platform (62) comprises: a Y-axis driving motor (621), a Y-axis transmission mechanism (622), a Y-axis slide table (623) and a Y-axis positioning sensor (624); The X-axis driving motor (611) is connected to the X-axis slide table (613) through the X-axis transmission mechanism (612); the Y-axis displacement platform (62) is fixedly mounted on the X-axis slide table (613); The Y-axis driving motor (621) is connected to the Y-axis slide table (623) through the Y-axis transmission mechanism (622); the atmospheric wafer support (63) is fixedly mounted on the Y-axis slide table (623); The X-axis positioning sensor (614) for positioning the position of the atmospheric wafer support hand (63) and the Y-axis positioning sensor (624) for positioning the position of the atmospheric wafer support hand (63) are fixedly mounted on the X-axis slide table (613) and the Y-axis slide table (623), respectively.

9. An application method of a magnetron sputtering coating device, comprising a magnetron sputtering coating device with an integrated measuring device according to any one of claims 1 to 8, characterized in that: The application method comprises the following steps: S1: The operator places the wafer (18) on the wafer holder (232) of the second wafer holder (23) in the sample loading chamber (2), and the vacuum wafer holder (331) of the vacuum robot arm (33) is located at the initial position; the second transmission plug valve (26) channel is closed, and the sample loading chamber (2) starts to be evacuated; and a predetermined vacuum degree is reached; S2: The vacuum robot arm (33) obtains the wafer (18): the vacuum robot arm (33) begins to extend forward, and stops the vacuum wafer support hand (331) below the center of the wafer support (232), and then the second wafer support (23) descends to place the wafer (18) on the vacuum wafer support hand (331), and at this time the wafer (18) is separated from the second wafer support (23); S3: Characteristic notch positioning of the wafer (18): The vacuum robot arm (33) retracts, brings the wafer (18) into the vacuum transfer chamber (3) and transfers it to the top of the wafer turntable (341) of the notch positioning mechanism (34); then, the turntable lifting motor (343) drives the wafer turntable (341) to rise and pass through the vacuum wafer support (331) until the wafer (18) is lifted and separated from the vacuum wafer support (331); then, the turntable rotating motor (342) drives the wafer turntable (341) to rotate. ) rotates to rotate and position the characteristic notch on the wafer (18) to a preset position; after the positioning is completed, the turntable lifting motor (343) drives the wafer turntable (341) to descend and put the wafer (18) back into the vacuum wafer support (331); finally, the vacuum robot arm (33) extends forward and parks the wafer (18) after notch positioning above the wafer transfer support (233) of the sample loading chamber (2); then the second wafer support (23) rises to place the wafer (18) into the wafer transfer support (233): S4: the injection chamber (2) first automatically performs a vacuum breaking operation to restore the air pressure in the injection chamber (2) to the atmospheric state, and after the channel of the second transmission gate valve (26) is opened, enter S5; S5: The atmospheric wafer support (63) obtains the wafer (18): the X-axis drive motor (611) of the wafer conveying device (6) drives the atmospheric wafer support (63) to extend into the sample loading chamber (2), and parks the atmospheric wafer support (63) below the center of the wafer transfer tray (233); then, the second wafer tray (23) descends to place the wafer (18) on the atmospheric wafer support (63); then, the X-axis drive motor (611) drives the atmospheric wafer support (63) to take the wafer (18) out of the sample loading chamber (2) and bring it into the rear support frame (5); S6: Measuring and recording the film thickness and internal stress of the wafer (18): the control system (9) controls the X-axis drive motor (611) and the Y-axis drive motor (621) to drive the atmospheric wafer support (63) to move according to the position of the atmospheric wafer support (63) fed back by the X-axis positioning sensor (614) and the Y-axis positioning sensor (624), and according to the operation flow preset by the control system (9), the wafer (18) is sequentially transferred to the measurement areas of the stress measuring instrument (7) and the film thickness measuring instrument (8), and the film thickness and internal stress of the wafer (18) are measured; at the same time, the control system (9) records the measurement position and measurement data; S7: After the measurement is completed, the X-axis drive motor (611) of the wafer conveying device (6) drives the atmospheric wafer support (63) to return the measured wafer (18) to the sample loading chamber (2) and park it above the second wafer support (23) of the sample loading chamber (2); then, the second wafer support (23) rises to place the wafer (18) into the wafer transfer support (233); S8: the second transmission gate valve (26) is closed, and the injection chamber (2) begins to be evacuated; after reaching a predetermined vacuum degree, S9 begins; S9: The first wafer holder (14) obtains the wafer (18): the vacuum robot arm (33) begins to extend forward, and stops the vacuum wafer holder (331) below the center of the wafer transfer holder (233). As the second wafer holder (23) descends, the wafer (18) is placed on the vacuum wafer holder (331), and then the vacuum robot arm (33) continues to move forward, the first transfer gate valve (17) is opened, and the wafer (18) on the vacuum wafer holder (331) is sent to the process main chamber (1); The lifting drive motor (162) of the drive system (16) drives the first wafer holder (14) to rise and pass through the vacuum wafer holder (331) until the wafer (18) is lifted; then the vacuum mechanical arm (33) retracts into the injection chamber (2), and the channel of the first transmission plug valve (17) is closed, at which time the injection chamber (2) and the process main chamber (1) are in a separated and isolated state; then, the process main chamber (1) continues to be evacuated, and after the process main chamber (1) reaches a higher vacuum degree, the magnetron sputtering coating process is carried out; S10: After the coating is completed, the channel of the first transmission gate valve (17) is opened, the vacuum robot arm (33) is extended into the main process chamber (1), and the lifting drive motor (162) drives the first wafer holder (14) to descend so that the coated wafer (18) is placed back on the vacuum wafer holder (331); the vacuum robot arm (33) is retracted; S11: Execute S3, S4, S5 and S6 again in sequence; obtain the film thickness and film internal stress of the wafer (18) after coating; After the measurement is completed again, the X-axis drive motor (611) of the wafer conveying device (6) drives the atmospheric wafer support (63) to convey the measured wafer (18) back to the sample loading chamber (2) again, and park it above the second wafer support (23) of the sample loading chamber (2); then, the second wafer support (23) rises to place the wafer (18) into the wafer support (232); S12: Compare the internal stress of the wafer (18) before and after coating, and feed back the comparison result to the control system (9); provide the relevant data to the operator, and the operator adjusts the ion source (15) control parameters and process-related parameters according to the data.

10. The application method of the magnetron sputtering coating equipment with integrated measuring device according to claim 9, characterized in that: In S3: the outer wall of the long chamber (31) is provided with transparent glass, the upper sensor (345) and the lower sensor (346) form a group of opposing sensors and pass through the glass to form a scanning area in the long chamber (31); When the wafer turntable (341) rises to lift the wafer (18), the edge of the wafer (18) is located in the scanning area of ​​the corresponding sensor, and the turntable rotation motor (342) drives the wafer turntable (341) to rotate, thereby driving the wafer (18) to rotate; when the upper sensor (345) and the lower sensor (346) scan the notch of the wafer (18) and feed back the position to the control system (9), the wafer turntable (341) stops rotating and records the notch of the wafer (18) for positioning; then, the notch of the wafer (18) is rotated to a specified position according to the system preset.

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