Rapid atomic layer deposition equipment

Abstract

The invention belongs to the technical field of atomic layer rapid deposition, and relates to atomic layer rapid deposition equipment, which comprises a first gas input assembly, a second gas input assembly and a third gas input assembly, the second gas input assembly is used for inputting second reaction gas; the reaction assembly is used for providing a reaction space; the reaction assembly is respectively connected with the first gas input assembly and the second gas input assembly; the extraction assembly is used for extracting impurities in the reaction assembly; the extraction assembly is connected with the reaction assembly. According to the atomic layer rapid deposition equipment provided by the invention, the effective adsorption efficiency is improved, and the source feeding and purging time of a precursor can be greatly shortened at a process end, so that the overall speed is greatly increased; and the use frequency of a bottle of precursor source can be prolonged economically, and the cost is saved.

Description

Technical Field

[0001] The present invention relates to the technical field of rapid atomic layer deposition, and in particular to a rapid atomic layer deposition device. Background Art

[0002] Atomic layer deposition (ALD), also known as atomic layer epitaxy (ALE) or atomic layer chemical vapor deposition (ALCVD), was first proposed by Finnish scientists in 1974. With its advantages of sequential deposition of single atomic layers, extremely uniform deposited layer thickness, and high three-dimensional conformality, ALD has become a key step in the development of advanced semiconductor process technology.

[0003] In the atomic layer deposition process, the chemical reaction of the new atomic layer is directly related to the previous layer. Atomic layer deposition forms a deposited film by alternately introducing two or more gaseous precursor sources into the reactor and undergoing chemical adsorption reactions on the surface of the deposition substrate. The two substances A and B are alternately adsorbed by chemical bonds to achieve surface reaction growth. Atomic layer deposition has the characteristics of self-limitation, that is, within each pulse cycle, the gaseous precursor can only react at the atomic bonding sites on the surface of the deposition substrate and just cover the substrate surface with a saturated amount, which enables repeated growth atomically layer by atomic layer within a very wide process window.

[0004] The deposition rate of conventional ALD equipment is significantly slower than that of CVD (chemical vapor deposition) and PVD (physical vapor deposition). For example, in the production of aluminum oxide, the ALD deposition rate is typically only around 0.1 nanometers per minute. For example, in the production of tool coatings using magnetron sputtering, the PVD deposition rate can reach several hundred nanometers per hour. And in the case of microwave PECVD (plasma-enhanced chemical vapor deposition), the CVD rate can reach as high as ten nanometers per second. While ALD offers excellent film thickness control, it consumes considerable time when producing thicker films. Summary of the Invention

[0005] In view of this, the present invention provides an atomic layer rapid deposition device.

[0006] Specifically, the present invention is achieved through the following technical solutions:

[0007] According to a first aspect of the present invention, there is provided an atomic layer rapid deposition apparatus, comprising:

[0008] A first gas input component, used for inputting a first reaction gas;

[0009] A second gas input component, used for inputting a second reaction gas;

[0010] A reaction assembly, configured to provide a reaction space; the reaction assembly is connected to the first gas input assembly and the second gas input assembly respectively;

[0011] An extraction component is used to extract impurities from the reaction component; the extraction component is connected to the reaction component.

[0012] Optionally, the first gas input component includes: a first pipe and a first precursor source bottle, wherein the gas outlet of the first pipe is connected to the reaction component, and the first precursor source bottle is connected to the first pipe.

[0013] Optionally, the first gas input component further includes: a first regulating valve, which is arranged on the first pipeline.

[0014] Optionally, the second gas input component includes: a second pipe and a second precursor source bottle, wherein the gas outlet of the second pipe is connected to the reaction component, and the second precursor source bottle is connected to the second pipe.

[0015] Optionally, the second gas input assembly further includes: a second regulating valve, and the second regulating valve is arranged on the second pipeline.

[0016] Optionally, the reaction component includes: a reaction chamber and a heating wire, wherein the reaction chamber is respectively connected to the gas outlet of the first pipe in the first gas input component, the gas outlet of the second pipe in the second gas input component and the extraction component, and the heating wire is buried in the inner bottom wall of the reaction chamber.

[0017] Optionally, a first air inlet, a second air inlet and an air extraction port are provided on the top of the reaction chamber, and the first air inlet, the second air inlet and the air extraction port are respectively connected to the air outlet of the first pipe in the first gas input component, the air outlet of the second pipe in the second gas input component and the extraction component.

[0018] Optionally, adjustment grooves are arranged on the inner side wall of the reaction chamber, and the adjustment grooves are used to insert partition plates.

[0019] Optionally, a placement groove is provided on the inner bottom wall of the reaction chamber, and the placement groove is located directly above the heating wire.

[0020] Optionally, the extraction component includes: a vacuum pump and an exhaust pipe, wherein two ends of the exhaust pipe are respectively connected to the reaction chamber in the reaction component and the vacuum pump.

[0021] The technical solution provided by the present invention brings at least the following beneficial effects:

[0022] The atomic layer rapid deposition equipment provided in this application improves the effective adsorption efficiency and can greatly reduce the source supply and purging time of the precursor at the process end, thereby greatly speeding up the overall speed; economically, it can also extend the number of times a bottle of precursor source can be used, saving costs. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the invention and, together with the description, serve to explain the principles of the invention.

[0024] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the following briefly introduces the drawings required for use in the embodiments or related technical descriptions. Obviously, for ordinary technicians in this field, other drawings can be obtained based on these drawings without any creative work.

[0025] Figure 1 A schematic structural diagram of an atomic layer rapid deposition device provided by an embodiment of the present invention;

[0026] Figure 2 A schematic diagram of the internal structure of a reaction chamber in an atomic layer rapid deposition device provided by an embodiment of the present invention;

[0027] Figure 3 A schematic top view of a reaction chamber in an atomic layer rapid deposition device provided in an embodiment of the present invention. DETAILED DESCRIPTION

[0028] To make the objectives, technical solutions, and advantages of the embodiments of the present invention more clear, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative efforts shall fall within the scope of protection of the present invention.

[0029] Figure 1 An atomic layer rapid deposition device suitable for an embodiment of the present invention is schematically shown.

[0030] Reference Figure 1-3 As shown, the present application provides an atomic layer rapid deposition device, comprising:

[0031] A first gas input assembly 10 is used to input a first reaction gas;

[0032] A second gas input assembly 20, for inputting a second reaction gas;

[0033] The reaction assembly 30 is used to provide a reaction space; the reaction assembly 30 is connected to the first gas input assembly 10 and the second gas input assembly 20 respectively;

[0034] The extraction component 40 is used to extract impurities from the reaction component 30 ; the extraction component 40 is connected to the reaction component 30 .

[0035] In the embodiment of the present application, a first reaction gas and a second reaction gas are respectively input into a reaction assembly 30 through a first gas input assembly 10 and a second gas input assembly 20 to react with a sample. The reaction products remain in the reaction assembly 30, and impurities are discharged through an extraction assembly 40. The embodiment of the present application describes an atomic layer deposition (ALD) apparatus that achieves an efficient and rapid deposition process and brings economic benefits through the optimized design of a series of components.

[0036] The first gas input assembly is used to input the first reactant gas. In the ALD process, the first reactant gas is typically a precursor gas containing the desired element. Connection: Connects to the reaction assembly to ensure accurate gas delivery to the reaction space.

[0037] Secondary gas input assembly: Used to input the second reactive gas. This is typically another precursor gas or a gas used to promote the reaction (such as an oxidant or reductant). Also connected to the reaction assembly, it is introduced into the reaction space alternately or simultaneously with the primary reactive gas.

[0038] The reaction assembly provides the reaction space and is the core area where chemical reactions occur during the ALD process. The structure and material selection of the reaction assembly must ensure that it can effectively contain and isolate gases while providing good heat conduction and temperature control. Connections: It connects to the first and second gas input assemblies, as well as the extraction assembly, to facilitate gas input and impurity extraction.

[0039] Extraction Component: Used to extract impurities from the reaction component, including unreacted gases, by-products, and other contaminants. Connection: Connected to the reaction component, impurity removal is achieved through an appropriate pump or exhaust system.

[0040] The advantages of this equipment are: Improving effective adsorption efficiency: By precisely controlling the input and extraction of gases, the gas concentration and reaction time in the reaction space are ensured, thereby improving the effective adsorption efficiency of the precursor on the substrate. Reducing precursor source entry and purge time: By optimizing the design of the reaction components and gas input / extraction components, the precursor source entry and purge time can be greatly reduced at the process end, thereby accelerating the overall deposition speed. Extending the number of times the precursor source can be used: Due to the improved effective adsorption efficiency and reduced waste, the number of times a bottle of precursor source can be used is extended, thereby reducing costs.

[0041] In summary, the atomic layer rapid deposition equipment provided by the embodiments of the present application technically achieves an efficient and rapid deposition process while also bringing significant economic savings. This equipment has broad application prospects in fields such as semiconductor manufacturing and material synthesis.

[0042] Exemplarily, the first gas input component 10 includes: a first pipe 11 and a first precursor source bottle 12 , wherein the gas outlet of the first pipe 11 is connected to the reaction component 30 , and the first precursor source bottle 12 is connected to the first pipe 11 .

[0043] In the embodiment of the present application, the first reaction gas enters the reaction assembly 30 through the first pipe 11 , and the first reaction gas carries the first precursor in the first precursor source bottle 12 into the reaction assembly 30 at the same time.

[0044] Exemplarily, the first gas input assembly 10 further includes: a first regulating valve 13 , which is disposed on the first pipeline 11 .

[0045] In the embodiment of the present application, the first regulating valve 13 can regulate the fluid flow in the first pipeline 11 .

[0046] Exemplarily, the second gas input component 20 includes: a second pipe 21 and a second precursor source bottle 22 , wherein the gas outlet of the second pipe 21 is connected to the reaction component 30 , and the second precursor source bottle 22 is connected to the second pipe 21 .

[0047] In the embodiment of the present application, the second reaction gas enters the reaction assembly 30 through the second pipe 21 , and the second reaction gas carries the second precursor in the second precursor source bottle 12 into the reaction assembly 30 at the same time.

[0048] Exemplarily, the second gas input assembly 20 further includes: a second regulating valve 23 , which is disposed on the second pipeline 21 .

[0049] In the embodiment of the present application, the second regulating valve 23 can adjust the fluid flow in the second pipeline 21 .

[0050] Exemplarily, the reaction component 30 includes: a reaction chamber 31 and a heating wire 32, wherein the reaction chamber 31 is respectively connected to the gas outlet of the first pipe 11 in the first gas input component 10, the gas outlet of the second pipe 21 in the second gas input component 20 and the extraction component 40, and the heating wire 32 is buried in the inner bottom wall of the reaction chamber 31.

[0051] In the embodiment of the present application, a sample is placed in the reaction chamber 31 , and the heating wire 32 can heat the sample, the first gas, and the second gas together to generate a product.

[0052] Illustratively, a first air inlet 33, a second air inlet 34, and an air extraction port 35 are provided at the top of the reaction chamber 31. The first air inlet 33, the second air inlet 34, and the air extraction port 35 are respectively connected to the air outlet of the first pipe 11 in the first gas input assembly 10, the air outlet of the second pipe 21 in the second gas input assembly 20, and the extraction assembly 40. In the embodiment of the present application, the first gas enters the reaction chamber 31 through the first pipe 11 and the first air inlet 33, the second gas enters the reaction chamber 31 through the second pipe 21 and the second air inlet 34, and impurities in the reaction chamber 31 enter the extraction assembly 40 through the air extraction port 35.

[0053] Exemplarily, adjustment grooves 36 are arranged on the inner wall of the reaction chamber 31 , and the adjustment grooves 36 are used to insert partition plates.

[0054] In the embodiment of the present application, the adjustment groove 36 is set at multiple positions and heights on the inner wall of the reaction chamber 31 as needed, and the partition plate is inserted into the adjustment groove 36, so that the size of the space for reaction in the reaction chamber 31 can be changed.

[0055] Illustratively, a placement groove 37 is provided on the inner bottom wall of the reaction chamber 31 , and the placement groove 37 is located directly above the heating wire 32 .

[0056] In the embodiment of the present application, the placement groove 37 is used to place the sample. The depth and area of ​​the placement groove 37 can be selected as needed, and the heat generated by the heating wire 32 is directly conducted to the sample in the placement groove 37.

[0057] Illustratively, the extraction component 40 includes: a vacuum pump 41 and an exhaust pipe 42 , wherein two ends of the exhaust pipe 42 are respectively connected to the reaction chamber 31 in the reaction component 30 and the vacuum pump 41 .

[0058] In the embodiment of the present application, the vacuum pump 41 extracts impurities, such as unreacted gas, from the reaction chamber 31 through the exhaust pipe 42 and then discharges the impurities.

[0059] In the embodiment of the present application, the top view of the reaction chamber 31 is capsule-shaped. The entire reaction chamber 31 is constructed of SiC composite ceramic material. The middle area of ​​the inner bottom wall serves as a 6-inch sample placement area. The first and second pipes 11 and 21 are also constructed of SiC composite ceramic material. A heating wire 32 is embedded directly beneath the placement slot 37 of the reaction chamber 31 to provide the temperature required for experimental deposition. The exhaust pipe 42 can be made of SiC composite ceramic material or stainless steel. The precursor source enters the reaction chamber 31 sequentially via the first and second pipes 11 and 21, respectively, using inert gas. A thin film is deposited within the 6-inch deep placement slot 37 reaction area. Reaction byproducts and excess gases are extracted through the exhaust port 35. Five aligned adjustment slots 36 are provided on the inner wall of the reaction chamber 31, measuring 1 mm x 2 mm. Adjacent adjustment slots 36 are 0.3 cm apart, and the lowest adjustment slot 36 is 0.5 cm from the inner bottom surface of the reaction chamber 31. Adjustment slots 36 can be fitted with retractable SiC ceramic partitions to control the volume of reaction chamber 31 during reactions. A circular sample area 1 mm deep and 15 cm in radius is located at the bottom of reaction chamber 31, serving as placement slot 37. This area accommodates samples up to 6 inches in diameter and is also downwardly compatible. The varying volume of reaction chamber 31 from the lowest to the highest adjustment slots 36 allows for rapid ALD reactions at varying rates.

[0060] In the embodiment of the present application, a new composite ceramic material (SiC ceramic) is used to make a capsule-shaped reaction chamber 31, replacing the original rectangular stainless steel or aluminum reaction chamber 31. Each pipe is also made of the new composite ceramic material (SiC ceramic). SiC ceramic has excellent mechanical properties, heat resistance, and corrosion resistance, which are well suited to the requirements of ALD coating. And because its surface has very low gas adsorption, it can reduce the adhesion of molecules in the air to a limited extent. During the reaction, the precursor source can be more efficiently attached to the substrate surface and reach a saturated adsorption state more quickly, thereby increasing the reaction rate. At the same time, each pipe will also reduce the adsorption of aerosols due to this characteristic. The loss of precursor source in the pipe is reduced, and more will enter the cavity, further improving the adsorption efficiency. On this basis, the cavity is remodeled, and the rectangular cavity is changed into a capsule shape to reduce gas backflow, and a placement groove 37 with a depth of 1 mm is opened at the bottom of the reaction chamber 31 to reduce sample plating and maintain flow field stability. The volume of the reaction chamber 31 is then compressed to the limit. The maximum height of the reaction chamber 31 is 3 cm, and this height can be further adjusted through the adjustment groove 36 in the reaction chamber 31. This allows the precursor source to react on the substrate surface in a very limited space.

[0061] In the embodiment of the present application, after the above changes, due to the improvement of the effective adsorption efficiency, the source supply and purging time of the precursor can be greatly reduced at the process end, thereby greatly accelerating the overall speed. Economically, it can also extend the number of times a bottle of precursor source can be used, saving costs.

[0062] In the embodiment of the present application, taking the coating of aluminum oxide film as an example, 300 cycles of coating were performed on a conventional thermal 6-inch atomic layer deposition device with an experimental temperature of 100°C, a flow rate of 30 sccm on both sides, and a process pressure of 0.1 torr. It was necessary to feed a trimethylaluminum source for 0.1s, purge for 30s, then feed a deionized water source for 0.03s, purge for 30s, and repeat this cycle 300 times to complete the coating. The average film thickness of the sample was 28.4nm, and the non-uniformity was 1.3%. However, the entire process took more than 5 hours, which is very time-consuming. When coating using an atomic layer rapid deposition device provided by the present application, at the same temperature, the trimethylaluminum source feed time can be reduced to 0.03s, purge for 2s, then feed a deionized water source for 0.02s, purge for 2s, and continue the cycle for 300 cycles. After testing, it was found that the average film thickness could reach 40nm, with a non-uniformity of 2.1%. The entire process time only took 20 minutes, and the growth rate of the entire sample film was greatly improved, and there was little difference in film thickness uniformity. This experiment was repeated several times, with similar results. Under the same conditions, the purge time was reduced to 1 second, and growth was continued for 300 cycles. The average film thickness was measured to be 47nm, with a uniformity of 2.3%. The experiment took just over 10 minutes to complete, and the results were similar after repeated attempts. This demonstrates that the atomic layer deposition apparatus provided in this application can rapidly prepare ALD films.

[0063] The following is a summary and analysis of the components and functions of the atomic layer deposition (ALD) equipment:

[0064] 1. Gas input assembly

[0065] First gas input assembly 10: includes a first pipeline 11, a first precursor source bottle 12, and a first regulating valve 13. Function: Used to input the first reaction gas and carry the first precursor into the reaction assembly 30. Regulation: First regulating valve 13 controls the fluid flow to ensure precise gas input.

[0066] Second gas input assembly 20: Includes second pipeline 21, second precursor source bottle 22, and second regulating valve 23. Function: Used to input the second reaction gas and carry the second precursor into reaction assembly 30. Regulation: Second regulating valve 23 also controls fluid flow, achieving precise gas input.

[0067] 2. Reaction components: reaction chamber 31 and heating wire 32.

[0068] Reaction chamber 31 provides the reaction space. Its top is equipped with a first air inlet 33, a second air inlet 34, and an air extraction port 35, which are connected to the first pipe 11, the second pipe 21, and the extraction assembly 40, respectively. A heating wire 32 is embedded in the inner bottom wall of reaction chamber 31 and is used to heat the sample and reaction gases to promote the chemical reaction.

[0069] The reaction chamber 31, viewed from above, is capsule-shaped and constructed from SiC composite ceramic material, offering excellent heat and corrosion resistance. A placement slot 37 is located on the inner bottom wall for accommodating samples, with adjustable depth and area. Adjustment slots 36 are located on the inner sidewalls, allowing for the insertion of partition plates to adjust the size of the reaction space and accommodate varying ALD reaction rates.

[0070] 3. Extraction components: vacuum pump 41 and exhaust pipe 42.

[0071] Function: Impurities such as unreacted gases and by-products in the reaction chamber 31 are extracted through the vacuum pump 41 and the exhaust pipe 42 .

[0072] Material: The exhaust pipe 42 can be made of SiC composite ceramic material or stainless steel to adapt to high temperature and corrosive environments.

[0073] 4. Equipment Features and Advantages

[0074] Efficient Adsorption: SiC ceramic material has low gas adsorption, which can reduce the adhesion of air molecules and improve the effective adsorption efficiency of precursors on the substrate surface. Fast Response: By optimizing the reaction chamber design and gas input / extraction system, the source and purge time of the precursor are greatly reduced, and the overall deposition rate is improved. Economical Savings: The number of times the precursor source can be used is extended, reducing costs. Flexible and Adjustable: The design of the adjustment slot 36 and the placement slot 37 in the reaction chamber enables the equipment to adapt to samples of different sizes and shapes, as well as ALD reaction rates of different rates.

[0075] 5. Experimental Verification

[0076] Coating experiments: Taking aluminum oxide thin films as an example, coating takes over five hours on a conventional thermal 6-inch ALD system. However, on the system provided in this application, coating takes only 20 minutes under the same conditions, with excellent film thickness uniformity. Further reducing the purge time reduces the coating time to just over 10 minutes, further demonstrating the system's rapid deposition capabilities.

[0077] In summary, this atomic layer rapid deposition device achieves an efficient, rapid, and economical ALD deposition process through a series of innovative designs and technical optimizations, and has broad application prospects and significant technical advantages. The atomic layer rapid deposition device provided in this application improves the effective adsorption efficiency and can greatly reduce the source supply and purge time of the precursor at the process end, thereby greatly accelerating the overall speed; it can also extend the number of times a bottle of precursor source can be used economically, saving costs.

[0078] It should be noted that, in this application, terms such as "upper," "lower," "left," "right," "front," "back," "top," "bottom," "inside," "outside," "vertical," "horizontal," "transverse," and "longitudinal" indicate positions or locations based on the positions or locations shown in the accompanying drawings. These terms are primarily intended to better describe this application and its embodiments and are not intended to limit the devices, elements, or components indicated to having a specific orientation, or to being constructed or operated in a specific orientation.

[0079] Furthermore, some of the above terms may be used to express other meanings besides indicating a position or location. For example, the term "on" may also be used to indicate a dependency or connection in certain circumstances. Those skilled in the art will understand the specific meanings of these terms in this application based on the specific circumstances.

[0080] Furthermore, the terms "installed," "disposed," "provided with," "connected," and "connected" should be interpreted broadly. For example, they can refer to fixed connections, removable connections, or integral structures; mechanical connections or electrical connections; direct connections, indirect connections through an intermediary, or internal communication between two devices, elements, or components. Those skilled in the art will understand the specific meanings of these terms in this application based on the specific circumstances.

[0081] Furthermore, the terms "first," "second," etc., are primarily used to distinguish between different devices, elements, or components (which may or may not be of the same type and configuration), and are not intended to indicate or imply the relative importance or quantity of the devices, elements, or components indicated. Unless otherwise specified, "plurality" means two or more.

[0082] The foregoing description is intended only to provide specific embodiments of the present invention, which will enable those skilled in the art to understand and implement the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of the present invention. Therefore, the present invention is not intended to be limited to the embodiments shown herein, but is intended to be accorded the widest scope consistent with the principles and novel features claimed herein.

Claims

1. An atomic layer rapid deposition device, characterized in that: include: A first gas input component, used for inputting a first reaction gas; A second gas input component, used for inputting a second reaction gas; A reaction component, used for providing a reaction space; the reaction component is connected to the first gas input component and the second gas input component respectively; An extraction component is used to extract impurities in the reaction component; the extraction component is connected to the reaction component.

2. The atomic layer rapid deposition equipment according to claim 1, characterized in that: The first gas input component includes: a first pipeline and a first precursor source bottle, wherein the gas outlet of the first pipeline is connected to the reaction component, and the first precursor source bottle is connected to the first pipeline.

3. The atomic layer rapid deposition equipment according to claim 2, characterized in that: The first gas input component further includes: a first regulating valve, and the first regulating valve is arranged on the first pipeline.

4. The powder atomic layer deposition device according to claim 1, characterized in that: The second gas input component includes: a second pipeline and a second precursor source bottle, wherein the gas outlet of the second pipeline is connected to the reaction component, and the second precursor source bottle is connected to the second pipeline.

5. The powder atomic layer deposition device according to claim 4, characterized in that: The second gas input component further includes: a second regulating valve, and the second regulating valve is arranged on the second pipeline.

6. The powder atomic layer deposition device according to claim 1, characterized in that: The reaction component includes: a reaction chamber and a heating wire, wherein the reaction chamber is respectively connected to the gas outlet of the first pipeline in the first gas input component, the gas outlet of the second pipeline in the second gas input component and the extraction component, and the heating wire is buried in the inner bottom wall of the reaction chamber.

7. The powder atomic layer deposition device according to claim 6, characterized in that: A first air inlet, a second air inlet and an air extraction port are provided on the top of the reaction chamber, and the first air inlet, the second air inlet and the air extraction port are respectively connected to the air outlet of the first pipeline in the first gas input component, the air outlet of the second pipeline in the second gas input component and the extraction component.

8. The powder atomic layer deposition device according to claim 6, characterized in that: Adjustment grooves are arranged on the inner side wall of the reaction chamber, and the adjustment grooves are used to insert partition plates.

9. The powder atomic layer deposition device according to claim 6, characterized in that: A placement groove is arranged on the inner bottom wall of the reaction chamber, and the placement groove is located directly above the heating wire.

10. The powder atomic layer deposition device according to claim 1, characterized in that: The extraction component comprises: a vacuum pump and an exhaust pipe, wherein two ends of the exhaust pipe are respectively connected to the reaction chamber in the reaction component and the vacuum pump.

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