Silicon core growth furnace and silicon material growth control method

By designing a position adjustment device in a silicon core growth furnace to drive the water-cooling and cooling screen device to move, the problem of large differences in the diameter of the inner and outer rings during the growth of silicon core rods in the prior art is solved, and the yield and crystal pulling efficiency are improved.

CN119530950APending Publication Date: 2025-02-28ZHEJIANG JINGSHENG MECHANICAL & ELECTRICAL CO LTD +1
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Patent Information

Application Number
CN202411803060.7
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2024-12-09
Publication Date
2025-02-28

AI Technical Summary

Technical Problem

During the crystal drawing process of existing silicon core growth furnaces, the isolation valve deforms due to the weight of the sub-furnace body and the water-cooled and hot screen deflects, resulting in large differences in the diameter of the inner and outer rings during the growth of the silicon core rod and low yield.

Method used

A silicon core growth furnace including a main furnace body, a sub-heat furnace body, a lifting device, a water cooling screen device and a position adjustment device are designed. The position adjustment device drives the water-cooling and cooling screen device to move, adjust the temperature of the liquid level inside and outside the crucible, so that the crystal growth state of the lifting heads of different heights is close to the same when pulling the silicon core rod.

Benefits of technology

The diameter difference between the inner and outer rings during the growth of the silicon core rod is reduced, the yield is improved, and the crystallization efficiency and quality of the silicon core growth furnace are enhanced.

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Abstract

The invention discloses a silicon core growth furnace and a silicon material growth control method.The silicon core growth furnace comprises a main furnace body, an auxiliary furnace body, a lifting device, a water-cooling heat shield device and a position adjusting device, the water-cooling heat shield device comprises a water-cooling heat shield body and a lifting assembly, a water-cooling heat shield is located in a crystal pulling channel, the water-cooling heat shield body comprises at least one cooling channel, and the lifting assembly is located in the cooling channel; the cooling channel is used for allowing the lifting head to pass through; the lifting assembly is installed on the auxiliary furnace body and comprises at least one lifting piece, the lifting piece has the moving freedom degree in the vertical direction, and the lifting piece is connected with the water-cooling heat shield body; the position adjusting device is connected with the water-cooling heat shield device and used for adjusting the position of the water-cooling heat shield. The technical problem of non-uniform distribution of a thermal field in the silicon core drawing process in the prior art is solved, and the technical effect of improving the crystal drawing efficiency and quality of the silicon core growth furnace is achieved.
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Description

Technical Field

[0001] The present application relates to the technical field of crystal growth furnaces, and in particular to a silicon core growth furnace and a method for controlling silicon material growth. Background Art

[0002] A silicon core furnace is a special equipment that uses the direct pulling method to pull silicon cores from polycrystalline silicon rods under inflated (protective gas) conditions. It is mainly used for the production of polycrystalline silicon growth carriers - silicon cores, and has important application value in the solar photovoltaic industry and semiconductor production.

[0003] Existing silicon core growth furnaces are generally processed by combining a main furnace body and an auxiliary furnace body. The auxiliary furnace body is usually placed above the main furnace body, and the auxiliary furnace body and the main furnace body are isolated by an isolation valve on the main furnace body. When the auxiliary furnace body is placed on the isolation valve, the isolation valve will be deformed to a certain extent when it is subjected to excessive force due to the excessive weight of the auxiliary furnace body itself, which will cause the auxiliary furnace body and a water-cooled heat shield pre-installed in the auxiliary furnace body to deflect, and further cause the plane where the water-cooled heat shield is located to have a certain inclination relative to the plane where the hot field is located in the main furnace body, thereby causing a difference in the temperature of the inner and outer liquid surfaces in the crucible during the silicon core drawing process, resulting in a large difference in the diameter of the inner and outer circles during the growth of the silicon core rod, and a low yield.

[0004] Therefore, the problem of the prior art is that there is a large difference in diameter between the inner and outer rings during the growth of the silicon core rod. Summary of the invention

[0005] In order to address the deficiencies of the prior art, the purpose of the present application is to provide a silicon core growth furnace, which can change the processing state of the water-cooled heat shield body in the crystal pulling channel to make the thermal field distribution during the crystal pulling process uniform, so as to improve the crystal pulling efficiency and quality of the silicon core growth furnace.

[0006] To achieve the above objectives, this application adopts the following technical solutions:

[0007] A silicon core growth furnace, characterized in that it comprises: a main furnace body, an auxiliary furnace body, a pulling device, a water-cooled heat shield device and a position adjustment device, wherein a crucible is arranged in the main furnace body; the auxiliary furnace body is arranged above the main furnace body, and the auxiliary furnace body is connected with the main furnace body to form a crystal pulling channel; the pulling device comprises a pulling head, and the pulling head has a plurality of pulling heads, and the pulling head is located in the crystal pulling channel, and the pulling head has the freedom of movement in the vertical direction; the water-cooled heat shield device comprises: a water-cooled heat shield body, a lifting assembly and a position adjustment device, the water-cooled heat shield is located in the crystal pulling channel, the water-cooled heat shield body comprises at least one cooling channel, and the cooling channel is used for the pulling head to pass through; the lifting assembly is installed on the auxiliary furnace body, the lifting assembly comprises at least one lifting member, the lifting member has the freedom of movement in the vertical direction, and the lifting member is connected to the water-cooled heat shield body; the position adjustment device is connected to the water-cooled heat shield device, and is used to adjust the position of the water-cooled heat shield.

[0008] Preferably, it also includes a guiding device, which includes at least one third guiding rod, and the third guiding rod is arranged in the crystal pulling channel, and the third guiding rod is used to limit the moving direction of the water-cooled heat screen; the third guiding rod includes: a first rod body and a second rod body, and the first end of the first rod body is fixedly connected to the auxiliary furnace body; the second end of the first rod body is hinged to the first end of the second rod body, and the second rod body has a rotational freedom around the hinge point.

[0009] Preferably, the guide device also includes a mounting flange, which is mounted on the top of the auxiliary furnace body, has freedom of movement in multiple directions, is connected to the second end of the second rod body, and is used to drive the second rod body to rotate.

[0010] Preferably, the length of the first rod body is greater than the length of the second rod body.

[0011] Preferably, the adjustment device includes a built-in driving block, which is arranged in the crystal pulling channel, connected to the water-cooled heat shield, and has at least a degree of freedom of movement in a horizontal direction, and is used to drive the displacement of the water-cooled heat shield in a horizontal direction.

[0012] Preferably, the adjustment device further comprises an external driving component, and there are multiple external driving components, and the multiple external driving components are arranged around the outer wall of the auxiliary furnace body, and the output end of the driving component passes through the auxiliary furnace body and is connected to the built-in driving block.

[0013] Preferably, the adjustment device includes a first drive assembly, which is mounted on the outer wall of the auxiliary furnace body, and the output end of the first drive assembly is connected to the lifting member, and the output end of the first drive assembly has at least the freedom of movement along the first direction and / or the second direction.

[0014] Preferably, the first driving assembly includes: a mounting ring, a first movable member and a second movable member, the mounting ring is connected to the auxiliary furnace body, the first movable member is slidably connected to the mounting ring, and the first movable member has the freedom of movement along the first direction; the first end of the second movable member is fixedly connected to the lifting member, and the second end of the second movable member is slidably connected to the first movable member, and the second movable member has the freedom of movement along the second direction.

[0015] Preferably, the main furnace body further comprises an isolation valve, which is arranged at the upper part of the main furnace body and connected to the auxiliary furnace body, and is used to control the connection and closing of the main furnace body and the auxiliary furnace body.

[0016] The present application also provides a method for controlling the growth of silicon materials, which is used in the aforementioned silicon core growth furnace, and includes the following steps: dividing the silicon cores according to their positions to obtain the growth conditions of the silicon cores in different groups; adjusting the direction of the water-cooled heat shield according to the growth conditions; obtaining the growth conditions includes: dividing the silicon materials according to regions and labeling them in sequence; obtaining the length, diameter, and weight of the silicon materials in different regions; obtaining the average growth conditions of the silicon cores in each region; comparing the average growth conditions of the silicon cores in different regions, and controlling the position of the water-cooled heat shield according to the comparison results.

[0017] Compared with the prior art, the beneficial effects of this application are:

[0018] 1. The present application provides a silicon core growth furnace, including a position adjustment device. The adjustment device is arranged to drive a water-cooled heat shield device to move synchronously, so that the water-cooled heat shield device can adjust the temperature of the liquid surface inside and outside the crucible accordingly, so that the corresponding crystal growth states of the pulling heads at different heights when pulling the silicon core rod are close to the same, thereby reducing the diameter difference between the inner and outer circles during the growth process of the silicon core rod and improving the yield rate. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] Figure 1 It is a left view of a silicon core growth furnace in an embodiment of the present application;

[0020] Figure 2 It is a front view of a silicon core growth furnace in an embodiment of the present application;

[0021] Figure 3 for Figure 2 Enlarged view of part A in the middle;

[0022] Figure 4 This is a schematic diagram of the structure of a silicon core growth furnace in an embodiment of the present application;

[0023] Figure 5 This is a schematic diagram of the structure of the second auxiliary furnace body when it is installed in the embodiment of the present application;

[0024] Figure 6 This is a schematic diagram of the structure of the second auxiliary furnace body when it is installed in the embodiment of the present application;

[0025] Figure 7 This is a schematic diagram of the structure of the second auxiliary furnace body in the embodiment of the present application;

[0026] Figure 8 for Figure 5 Sectional view in the AA direction;

[0027] Fig. 9 This is a structural schematic diagram of a furnace driving device in an embodiment of the present application;

[0028] Fig.10 This is a schematic diagram of the structure of a position adjustment device in an embodiment of the present application;

[0029] Fig.11 for Figure 8 A partial structural diagram of the middle position adjustment device;

[0030] Fig.12 This is a schematic diagram of the structure of another position adjustment device in an embodiment of the present application;

[0031] Fig.13 for Fig.10 A top view of the center position adjustment device;

[0032] Fig.14 This is a partial structural schematic diagram of a silicon core growth furnace in an embodiment of the present application;

[0033] Fig.15 A cross-sectional view of a water-cooled heat shield device in an embodiment of the present application;

[0034] Fig.16 This is a front view of the lifting device in the embodiment of the present application;

[0035] Fig.17 It is a cross-sectional view of the pulling device in the embodiment of the present application;

[0036] Fig.18 This is a top view of the lifting device in the embodiment of the present application;

[0037] Fig.19 This is a schematic diagram of the structure of the lifting device in the embodiment of the present application;

[0038] Fig. 20This is a front view of the synchronous lifting device in the embodiment of the present application;

[0039] Fig.21 This is a schematic diagram of the installation of the crucible in the embodiment of the present application;

[0040] Fig. 22 It is a schematic diagram of the structure of the synchronous lifting device in the embodiment of the present application.

[0041] Among them, the reference numerals are: 100, main furnace body; 110, crucible; 120, first guide rod; 130, isolation valve; 200, auxiliary furnace body; 210, first auxiliary furnace body; 211, first part; 212, second part; 2121, cooling water channel; 210a, crystal pulling channel; 220, second auxiliary furnace body; 221, first flange; 222, water cooling layer; 2221, water cooling channel; 2222, water cooling guide bar; 2223, connecting pipe head; 223, second flange; 224, guide plate; 220a, re-injection channel; 300, furnace body driving device; 310, rotating shaft; 320, first driving member; 330, second driving member; 331, bearing part; 400, lifting device; 410, first mounting member; 411, upper plate; 412, lower plate; 413, second guide rod; 410a, movable channel; 420, second mounting member; 421, movable plate; 422, connecting rod; 430, lifting head; 4 40, rotary drive assembly; 441, output member; 442, transmission member; 450, lifting drive assembly; 500, water-cooled heat shield device; 510, water-cooled heat shield body; 520, lifting assembly; 600, re-investment member; 700, position adjustment device; 710, built-in drive block; 720, external drive member; 730, first drive assembly; 731, mounting ring; 732, first moving member; 733, second moving member; 800, guide device; 810, The third guide rod; 811, the first rod body; 812, the second rod body; 820, the mounting flange; 900, the limit unit; 1000, the synchronous lifting device; 1010, the first motor; 1020, the motor water-cooling section; 1030, the mounting plate; 1040, the support frame; 1041, the upper frame; 1042, the lower frame; 1043, the flexible connector; 1050, the telescopic sleeve; 1100, the thermal field; 1110, the heater; 1120, the second motor. DETAILED DESCRIPTION

[0042] In order to enable those skilled in the art to better understand the solution of the present application, the technical solution in the specific implementation manner of the present application will be clearly and completely described below in conjunction with the drawings in the implementation manner of the present application.

[0043] It should be noted that the words "first", "second" and similar words used in the specification and claims of this application do not indicate any order, quantity or importance, but are only used to distinguish different components. Similarly, words such as "one" or "a" do not indicate a quantitative limitation, but indicate the existence of at least one. "Multiple" or "several" means at least two. Unless otherwise specified, words such as "front", "back", "left", "right", "bottom" and / or "top" are only for the convenience of description and are not limited to one position or one spatial orientation. Words such as "include" or "comprise" mean that the elements or objects appearing before "include" or "comprise" include the elements or objects listed after "include" or "comprise" and their equivalents, and do not exclude other elements or objects. Words such as "connect" or "connected" are not limited to physical or mechanical connections, and may include electrical connections, whether direct or indirect.

[0044] The singular forms "a", "an", and "the" used in this specification and the appended claims are intended to include the plural forms as well, unless the context clearly indicates otherwise. It should also be understood that the term "and / or" used herein refers to and includes any or all possible combinations of one or more of the associated listed items.

[0045] It should be understood that those skilled in the art can make improvements or changes based on the above description, and all these improvements and changes should fall within the scope of protection of the claims attached to this application.

[0046] like Figure 1 As shown, the silicon core growth furnace includes a main furnace body 100, a furnace body 200, a pulling head 430 and a water-cooled heat shield body 510. A crucible 110 is arranged in the main furnace body 100; the auxiliary furnace body 200 is located above the main furnace body 100, and the auxiliary furnace body 200 is detachably connected to the main furnace body 100. Specifically, the main furnace body 100 includes a main furnace body and a furnace chamber. The main furnace body is used to form a crystal pulling environment. At least one crucible 110 is arranged in the main furnace body 100. The crucible 110 is preferably made of quartz material, and the crucible 110 is used to hold silicon material. It also includes a thermal field 1100, which is arranged in the main furnace body 100 and is used to heat the crucible 110. The solid silicon material in the crucible 110 can be melted to form liquid silicon material through the heating of the thermal field 1100.

[0047] The pulling head 430 has multiple pulling heads 430, and the multiple pulling heads 430 are two or more. By setting multiple pulling heads 430, the silicon core growth furnace in the present application can process multiple silicon core rods at one time; the pulling head 430 includes a steel wire rope, a graphite connecting section and a heavy hammer arranged in sequence along the vertical direction, and the graphite connecting section is used for the installation of seed material, and the seed material can enter the crucible 110 solution for growing silicon core rods.

[0048] The water-cooled heat shield device 500 includes a water-cooled heat shield body 510 and a cooling channel arranged on the water-cooled heat shield body 510, and the cooling channel is used for the drawn silicon core to pass through. In one embodiment, the cooling channel is a channel arranged in the vertical direction, and the cooling channel is adapted to the silicon core rod, and the grown silicon core rod can pass through the cooling channel. In one embodiment, a plurality of cooling channels are provided, and the number of cooling channels is greater than or equal to the number of pulling heads 430. The auxiliary furnace body 200 is connected to the main furnace body 100, and is used to temporarily accommodate the silicon core rods in the drawing process, and at the same time plays a role in observing and adjusting the growth state of the silicon core rods.

[0049] In the prior art, the existing silicon core growth furnace generally has only one auxiliary furnace body 200, and the operations of crystal pulling growth and re-feeding are completed through the auxiliary furnace body 200. In order to avoid the contamination of the silicon core material, it is generally necessary to first pause the crystal pulling growth process and then perform the re-feeding operation. When both operations are performed in the same auxiliary furnace body 200, a lot of time will be wasted.

[0050] In the prior art, the pulling head 430 of the silicon core furnace is generally built into the auxiliary furnace body 200, and the water-cooled heat shield structure mostly adopts a combination structure of a water-cooled cylinder + a water-cooled plate. When multiple silicon core rods are processed at one time, as the number of processing increases, the volume of the water-cooled heat shield body 510 also increases, and the gap between the water-cooled heat shield body 510 and the inner wall of the auxiliary furnace body 200 will also become smaller; because the water-cooled heat shield body needs to be moved when the silicon material re-investment step is performed, if the gap between the water-cooled heat shield body and the inner wall of the auxiliary furnace body becomes smaller and smaller, it will cause the water-cooled heat shield body 510 to be replaced very difficult, which in turn leads to the problem of unsuccessful silicon core re-investment or low re-investment efficiency and more time-consuming re-investment in the prior art. At the same time, it is necessary to consider that since the silicon core furnace needs to draw multiple silicon core rods at one time, the straightness between the main furnace body 100 and the auxiliary furnace body 200 is extremely important. Unlike the single crystal furnace, the silicon core furnace in the present application needs to consider how to ensure the straightness during the replacement of different furnace bodies. If the straightness deviation is too large, when multiple silicon core rods are produced at one time, it will cause a large difference in the diameters of the silicon core rods at different positions, thereby affecting the quality and efficiency of the product. However, there is no good method in the prior art to solve the problem that the straightness deviation between the two may be too large.

[0051] The existing silicon core furnace lifting head 430 is generally built into the auxiliary furnace body 200, and the existing water-cooled heat shield structure mostly adopts a combined structure of a water-cooled cylinder + a water-cooled plate. In the prior art, when processing multiple silicon core rods at one time, as the number of silicon core rods processed at a time increases, the volume of the water-cooled heat shield body 510 also increases synchronously, resulting in a smaller gap between the water-cooled heat shield body 510 and the inner wall of the auxiliary furnace body 200. The smaller gap makes it difficult to re-feed silicon materials due to the smaller gap, resulting in unsuccessful re-feeding or low re-feeding efficiency. Therefore, in the prior art, a single auxiliary furnace body has the problem of difficulty in re-feeding silicon materials and a long time consumption during re-feeding.

[0052] In order to solve the above problems, the present application proposes a new structure, which adopts two different auxiliary furnace bodies 200 to complete the crystal pulling and re-throwing operations respectively, and cooperates with the furnace body driving device 300 to switch and install the first auxiliary furnace body 210 and the second auxiliary furnace body 220.

[0053] Specifically, in one embodiment, the auxiliary furnace body 200 includes a first auxiliary furnace body 210 and a second auxiliary furnace body 220. The first auxiliary furnace body 210 and the second auxiliary furnace body 220 can be detachably connected to the main furnace body 100 respectively. When the first auxiliary furnace body 210 is connected to the main furnace body 100, the furnace chamber of the first auxiliary furnace body 210 and the furnace chamber of the main furnace body 100 are connected to form a crystal pulling channel 210a, and the crystal pulling channel 210a is used for pulling silicon cores; the second auxiliary furnace body 220 is used to form a re-feeding channel 220a extending from the second auxiliary furnace body 220 to the main furnace body 100, and the re-feeding channel 220a is used for re-feeding silicon materials. By setting the furnace body driving device 300 to control the first auxiliary furnace body 210 and the second auxiliary furnace body 220 respectively, the first auxiliary furnace body 210 and the second auxiliary furnace body 220 can be connected to the main furnace body 100 respectively, and the processing state of the silicon core growth furnace can be changed without changing the layout inside the auxiliary furnace body 200, so as to simplify the re-investment steps, save the re-investment time, improve the silicon core drawing efficiency, and reduce the drawing cost of a single silicon core. It is conceivable that according to the actual requirements in the processing process, the auxiliary furnace body 200 can also include more parts, such as a third auxiliary furnace body, a fourth auxiliary furnace body, etc., for completing different operation steps.

[0054] For further information, please refer to Figure 2The first auxiliary furnace body 210 includes: a first part 211 and a second part 212, the bottom end of the first part 211 is connected to the top end of the main furnace body 100, and at least one switch door is provided on the first part 211; the bottom end of the second part 212 is connected to the top end of the first part 211, and the second part 212 is provided with a cooling water channel 2121; specifically, the first auxiliary furnace body 210 includes a first part 211 and a second part 212, the first part 211 is connected to the main furnace body 100, and a switch door is provided on the first part 211, and the setting of the switch door position depends on the position of the pulling device 400. In this application, the position of the pulling device 400 can be adjusted by the switch door. In one embodiment, after the crystal pulling process is completed, the switch door can be directly opened, and the pulling device 400 located in the first auxiliary furnace body 210 can be adjusted. The door frame of the switch door is fixedly connected to the main body of the first part 211, and the switch door is locked and opened by the connecting rod 422 mechanism. When necessary, the switch door can be opened or closed by rotating the connecting rod 422 connected to the connecting rod 422 mechanism. By setting the first auxiliary furnace body 210 as a detachably connected first part 211 and second part 212, it is not necessary to replace the entire furnace body at one time when processing silicon core rods of different models, and the installation and transportation efficiency of the furnace body can also be greatly improved. The second part 212 is arranged above the first part 211. The second part 212 is a cannon-type furnace body. A cooling water channel 2121 is also provided at the top of the second part 212. The cooling water channel 2121 is used to cool the silicon core rods located in the crystal pulling channel 210a.

[0055] For further information, please refer to Figures 2 to 9 The second auxiliary furnace body 220 includes: a first flange 221, a water-cooling layer 222, a second flange 223 and a guide plate 224, the water-cooling layer 222 is located below the first flange 221; the second flange 223 is located at the bottom of the second auxiliary furnace body 220; the guide plate 224 is arranged on the outer wall of the water-cooling layer 222.

[0056] Specifically, the second auxiliary furnace body 220 is divided into two parts, the lower part is provided with a water cooling layer 222, and the water cooling layer 222 is used to prevent the second auxiliary furnace body 220 from being overheated due to long-term re-investment. A first flange 221 is provided between the upper and lower parts, and the first flange 221 protrudes from the furnace body surface of the second auxiliary furnace body 220. The second flange 223 is provided near the bottom of the second auxiliary furnace body 220. The second auxiliary furnace body 220 is used to cooperate with the main furnace body 100 to complete the connection, and the connection method is pin connection. A guide channel is provided on the guide plate 224, and the guide plate 224 is easy to disassemble, so that the auxiliary investment auxiliary furnace chamber and the silicon core furnace can be used together, thereby reducing the cost of silicon core drawing. The second auxiliary furnace body 220 is provided with a first flange 221, and the first flange 221 is located in the middle of the second auxiliary furnace body 220. A positioning pin hole is opened on the first flange 221 to play a positioning role. In one embodiment, the second driving member 330 in the furnace body driving device 300 adopts a special-shaped structure to cooperate with the pin hole of the first flange 221 on the second auxiliary furnace body 220 to lift the second auxiliary furnace body 220; the special-shaped structure is preferably a "V" shape, the outer contour of the second auxiliary furnace body 220 is circular, and the second auxiliary furnace body 220 can be stuck in the "V" shaped special-shaped structure. At the same time, an electrical installation board 1030 is provided on the second auxiliary furnace body 220 to install electrical components and control the lifting and lowering of the quartz re-throwing cylinder. At the same time, a guide seat is provided at the lower part of the second auxiliary furnace body 220, and when the second auxiliary furnace body 220 is placed on the isolation valve 130, the guide seat can play a guiding role.

[0057] Please refer to Fig. 9The furnace body driving device 300 includes: a rotating shaft 310, a first driving member 320 and a second driving member 330, wherein the rotating shaft 310 is located above the main furnace body 100; the first driving member 320 is movably mounted on the rotating shaft 310, the first driving member 320 has at least one rotational degree of freedom, and the first driving member 320 is connected to the first auxiliary furnace body 210; the second driving member 330 is movably mounted on the rotating shaft 310, the second driving member 330 has at least one rotational degree of freedom, and the second driving member 330 is connected to the second auxiliary furnace body 220; wherein the first driving member 320 and the second driving member 330 can rotate alternately to above the main furnace body 100. Specifically, the furnace driving device 300 in the present application further includes a mounting frame, which is located above the main furnace body 100, and the rotating shaft 310 is mounted on the mounting frame, and the rotating shaft 310 can rotate around its axis; the first driving member 320 and the second driving member 330 are respectively sleeved on the rotating shaft 310, so the first driving member 320 and the second driving member 330 both have rotational freedom. The first driving member 320 is connected to the first auxiliary furnace body 210 by bolts, and at least two first connecting parts are arranged on the first driving member 320 at intervals, and the first connecting part is a protrusion protruding from the driving plane, and the first connecting part is also provided with a threaded hole that can pass the bolt; in this embodiment, the first part 211 and the second part 212 are respectively provided with a second connecting part, and the first connecting part and the second connecting part are fixedly connected by bolts.

[0058] The present application also provides a control method for a silicon core growth furnace, comprising the following steps: controlling the first auxiliary furnace body 210 to be connected to the main furnace body and performing a crystal pulling operation; obtaining the silicon core growth condition; judging the processing state of the silicon core growth furnace according to the silicon core growth condition, including the crystal pulling state and the re-investment state; when it is judged that the silicon core growth furnace is in the processing state, keeping the first auxiliary furnace body 210 connected to the main furnace body 100 unchanged; when it is judged that the silicon core growth furnace is in the re-investment state, separating the first auxiliary furnace body 210 from the main furnace body 100, controlling the first auxiliary furnace body 210 to be away from the main furnace body 100, and controlling the second auxiliary furnace body 220 to be connected to the main furnace body 100; repeating the above steps until the crystal growth is completed.

[0059] Preferably, judging the state of the silicon core growth furnace further includes the following steps: obtaining the growth state of the silicon cores, including the number, diameter, weight, and length of the silicon cores; and obtaining the position of the water-cooled heat shield device in the first auxiliary furnace body. Specifically;

[0060] S100, the furnace body driving device 300 controls the first auxiliary furnace body 210 to connect with the main furnace body 100, and performs a crystal pulling operation; first, the first driving member 320 of the furnace body driving device 300 is connected to the connecting part on the first auxiliary furnace body 210, controls the first auxiliary furnace body 210 to move above the main furnace body 100, and then controls the first auxiliary furnace body 210 to move downward, and completes the positioning and docking of the first auxiliary furnace body 210 through the multiple docking parts provided on the main furnace body 100; then, the crystal pulling device in the first auxiliary furnace body 210 is started to complete the crystal pulling operation.

[0061] S200, separate the first sub-furnace body 210 from the main furnace body 100, and control the first sub-furnace body 210 to be away from the main furnace body 100, and detect the crystal pulling state in the first sub-furnace body 210 through the detection device, and the crystal pulling detection includes the number, diameter, weight and length of silicon cores; taking weight detection as an example, in one embodiment, the weight of the silicon core rods grown in the main furnace body 100 is detected by a weight detection device located on the main furnace body 100, and when the weight reaches a certain position, the isolation valve between the main furnace body 100 and the first sub-furnace body 210 is closed, and various water and electricity connections between the main furnace body 100 and the first sub-furnace body 210 are disconnected. Other detection methods are similar, and only the corresponding detection device needs to be added.

[0062] S210, in the present embodiment, also includes obtaining the position of the water-cooled heat shield device in the first sub-furnace body 210. Specifically, it includes the following steps: obtaining the real-time position of the water-cooled heat shield device 500, comparing the real-time position of the water-cooled heat shield device 500 with the preset water-cooled heat shield device 500, when the position of the water-cooled heat shield device 500 deviates within a certain range, determining that the crystal pulling state should be terminated, and moving the first sub-furnace body 210 to the specified position to adjust the water-cooled heat shield device 500.

[0063] S300, control the second auxiliary furnace body 220 to connect with the main furnace body 100, and perform the re-investment operation; in the present application, during normal crystal pulling, the first part 211 and the second part 212 of the first auxiliary furnace body 210 are combined and placed on the isolation valve 130, and the second auxiliary furnace body 220 is placed at the installation station, and the installation station can be provided with a supporting device such as a tooling trolley. When the re-investment operation is required, close the isolation valve 130, then disconnect the connection between the first auxiliary furnace body 210 and the main furnace body 100, and then unscrew the first auxiliary furnace body 210; then place the tooling trolley used to temporarily accommodate the second auxiliary furnace body 220 under the furnace body driving device 300, and after the second driving member 330 in the furnace body driving device 300 descends to below the first flange 221 on the second auxiliary furnace body 220, lift the second driving member 330. The connection structure and the special-shaped structure in the second driving member 330 are matched with the holes on the first flange 221 through the positioning pins to realize the positioning and fixing of the second auxiliary furnace body 220. Then, the second driving member 330 in the furnace body driving device 300 drives the second auxiliary furnace body 220 to move, and the second auxiliary furnace body 220 is placed on the isolation valve 130. The guide plate 224 at the bottom of the second auxiliary furnace body 220 cooperates with the guide part on the main furnace body 100 to realize the stable placement of the second auxiliary furnace body 220. After the second auxiliary furnace body 220 is placed, the electrical components on the electrical installation board 1030 are energized to control the lifting and lowering of the quartz re-feeding cylinder in the second auxiliary furnace body 220, so as to realize the re-feeding of silicon materials.

[0064] Furthermore, the silicon core growth furnace also includes a position adjustment device 700, and the position adjustment device 700 is used to adjust the position of the water-cooled heat shield.

[0065] Specifically, the position adjustment device 700 is used to adjust the position of the water-cooled heat shield device 500 in the crystal pulling channel 210a. The position of the water-cooled heat shield specifically includes: the deflection angle of the water-cooled heat shield body 510 relative to the axial direction of the crystal pulling channel 210a and the position of the water-cooled heat shield body 510 in the vertical direction or the horizontal direction. The position adjustment device 700 in the present application includes at least one adjustment member, and the adjustment member has a plurality of degrees of freedom of movement in multiple directions, that is, the adjustment member can move in multiple directions, and the adjustment member can drive the water-cooled heat shield device 500 to move synchronously while moving. Through the movement of the water-cooled heat shield device 500, the temperature of the liquid surface inside and outside the crucible 110 can be adjusted accordingly, so that the growth of the silicon core rod tends to be consistent, reducing the large difference in the diameter of the inner and outer circles during the growth of the silicon core rod, and improving the yield rate.

[0066] Please refer to Figures 10 to 15In one embodiment, the position adjustment device 700 includes a built-in driving block 710 and an external driving member 720. The built-in driving block 710 is arranged in the crystal pulling channel 210a, and the built-in driving block 710 is connected to the outer wall of the water-cooled heat shield body 510. The built-in driving block 710 has at least a horizontal degree of freedom of movement, which is used to drive the displacement of the water-cooled heat shield in the horizontal direction. The built-in driving block 710 is used to form an adjustment member; there are multiple external driving members 720, and the multiple external driving members 720 are arranged around the outer wall of the auxiliary furnace body 200, and the output end of the driving member passes through the auxiliary furnace body 200 and is connected to the built-in driving block 710.

[0067] For details: please refer to Figure 12-13 The adjustment device includes a built-in driving block 710 and an external driving component 720. The output end of the external driving component 720 is connected to the built-in driving block 710. The external driving component 720 is installed on the outer surface of the auxiliary furnace body 200. The external driving component 720 includes a movable driving rod (the driving part of the external driving component 720 is preferably a motor, and the external driving component 720 can perform precise control operations according to electrical signals); in this embodiment, a mounting hole for the driving rod to pass through is reserved on the auxiliary furnace body 200, and a sealing ring is provided on the mounting hole to seal the output end passing through the mounting hole. The built-in driving block 710 is arranged in the crystal pulling channel 210a, and the built-in driving block 710 is connected to the external driving member 720. Under the action of the external driving member 720, the built-in driving block 710 approaches or moves away from the water-cooled heat shield body 510 located in the crystal pulling channel 210a; preferably, the part of the built-in driving block 710 close to the water-cooled heat shield body 510 is an arc-shaped abutment portion, and the contour of the arc-shaped abutment portion is adapted to the contour of the outer wall of the water-cooled heat shield, so as to better complete the clamping of the water-cooled heat shield body 510; in one embodiment, the number of the built-in driving blocks 710 is four, and the four built-in driving blocks 710 are arranged at the same height and are evenly arranged along the outer peripheral surface of the water-cooled heat shield body 510, and the four built-in driving blocks 710 can alternately approach the water-cooled heat shield body 510. By setting the built-in driving block 710 and the external driving member 720 to drive the water-cooled heat shield body 510, compared with the manual adjustment method in the prior art, the adjustment accuracy is higher and the adjustment speed is faster. At the same time, the built-in driving block 710 can clamp the water-cooled heat shield body 510 during processing, increase the stability of the water-cooled heat shield body 510 and the temperature gradient affected by it, and reduce the impact of vibration during the processing.

[0068] For further information, please refer to Figure 10 to Figure 11, the position adjustment device 700 includes a first drive assembly 730, the first drive assembly 730 is mounted on the outer wall of the auxiliary furnace body 200, the output end of the first drive assembly 730 is connected to the lifting member, and the output end of the external drive assembly has at least the freedom of movement along the first direction and / or the second direction. Specifically, in the present application, the adjustment device includes a first drive assembly 730, the first drive assembly 730 is mounted on the outer wall of the auxiliary furnace body 200; at the same time, the output end of the first drive assembly 730 is fixedly connected to the water-cooled heat shield body 510, and the connection method is screw connection or welding, and the movement of the output end of the first drive assembly 730 can drive the movement of the water-cooled heat shield body 510; preferably, in the present embodiment, the output end of the first drive assembly 730 acts on the lifting member, and then acts on the entire water-cooled heat shield body 510 through the lifting member to control the temperature gradient in the crystal pulling channel 210a.

[0069] Furthermore, the first drive assembly 730 includes: a mounting ring 731, a first movable member 732 and a second movable member 733, the mounting ring 731 is connected to the auxiliary furnace body 200; the first movable member 732 is slidingly connected to the mounting ring 731, and the first movable member 732 has the freedom of movement along the first direction; the first end of the second movable member 733 is fixedly connected to the lifting member, and the second end of the second movable member 733 is slidingly connected to the first movable member 732, and the second movable member 733 has the freedom of movement along the second direction. Specifically: In one embodiment, the mounting ring 731 is sleeved on the outside of the auxiliary furnace body 200, and the mounting ring 731 is arranged at the position where the lifting assembly 520 and the water-cooled heat shield body 510 are connected to each other in the water-cooled heat shield device 500, and the mounting ring 731 and the auxiliary furnace body 200 are fixedly connected, and the connection method is one of welding, screwing, clamping, and bonding; the first movable member 732 and the mounting ring 731 are slidingly connected, and the sliding connection method is preferably through the cooperation of a slider and sliding, that is, the first movable member 732 can slide relative to the mounting ring 731, and the sliding direction depends on the design of the track; in this embodiment, the sliding track of the first movable member 732 is configured to face the first direction, and the first movable member 732 is connected to an external drive motor, and can move in the first direction under the drive of the external drive motor. The mounting ring 731, the first moving member 732 and the second moving member 733 are arranged in sequence along the vertical direction. One end of the second moving member 733 is slidably connected to the first moving member 732. The connection method is the same as the connection method between the first moving member 732 and the mounting ring 731. The second moving member 733 can move relative to the first moving member 732 in the second direction. The first direction and the second direction are two directions perpendicular to each other on the horizontal plane. By connecting the other end of the second moving member 733 to the lifting member in the water-cooled heat shield device 500, the second moving member 733 can drive the water-cooled heat shield body 510 to move in multiple directions in the horizontal plane. In one embodiment, a sealing telescopic member is also provided. The sealing telescopic member can prevent the lifting member from contacting the outside, so that when the second moving member 733 is arranged outside the auxiliary furnace body 200, it can protect the lifting member that needs to extend partially out of the auxiliary furnace body 200 and the part connected to the second moving member 733.

[0070] Please refer to Figure 14 to Figure 15 The present application also provides a guiding device 800, which includes at least one third guiding rod 810, which is arranged in the crystal pulling channel 210a, and is used to limit the moving direction of the water-cooled heat shield; the third guiding rod 810 includes: a first rod body 811 and a second rod body 812, and the first end of the first rod body 811 is fixedly connected to the auxiliary furnace body 200; the second end of the first rod body 811 and the first end of the second rod body 812 are hinged, and the second rod body 812 has a rotational freedom of rotation around the hinge point.

[0071] Specifically, when the water-cooled heat shield device 500 moves along the crystal pulling channel 210a, it needs to move along a certain angle; or when the lifting device moves, it also needs to move along a certain angle. In the present application, a guide mechanism is provided to guide the water-cooled heat shield device 500 or the lifting mechanism, so that the water-cooled heat shield body 510 can be offset by a certain angle. In one embodiment, the third guide rod 810 is provided in the crystal pulling channel 210a, the third guide rod 810 is abutted and matched with the water-cooled heat shield body 510, the third guide rod 810 passes through or partially passes through the water-cooled heat shield body 510, and the water-cooled heat shield body 510 can move along the axis of the third guide rod 810 when lifting; one end of the third guide rod 810 is hingedly connected to the inner wall of the auxiliary furnace body 200, and the other end of the third guide rod 810 has a rotational freedom, and the third guide rod 810 can deflect a certain angle when subjected to an external force.

[0072] In another embodiment, the third guide rod 810 includes a first rod body 811 and a second rod body 812, wherein the first end of the first rod body 811 is fixedly connected to the inner wall of the auxiliary furnace body 200, and the connection method is one or more of welding, pin connection, screw connection, and clamping connection; the second rod body 812 is hinged to the first rod body 811, and the hinge method is preferably connected through a universal joint, and the second rod body 812 can rotate relative to the first rod body 811. By setting the first rod body 811 and the second rod body 812, the third guide rod 810 as a whole can be deflected at a certain angle in the crystal pulling channel 210a, and further the water-cooled heat shield body 510 is also moved accordingly, and the second rod body 812 is preferably set at a position close to the top of the auxiliary furnace body 200; by changing the position of the connection point between the second rod body 812 and the first rod body 811, the deflection angle of the second rod body 812 can be better controlled, and the closer the universal joint is to the water-cooled heat shield body 510, the larger the adjustable angle range is, and the better the bearing performance is. It is conceivable that the third guide rod 810 can also be set as a multi-section structure, and a three-part or even more-part rod can be designed based on a two-part rod body. At the same time, the connection between adjacent rod bodies is not necessarily a universal joint connection, and other connection methods can also be adopted as long as relative rotation can be maintained.

[0073] Furthermore, in one embodiment, the length of the first rod body 811 is greater than that of the second rod body 812. By setting the length of the first rod body 811 to be greater than that of the second rod body 812, and the second rod body 812 being relatively close to the bottom of the auxiliary furnace body 200, the movement amplitude of the third guide rod 810 is larger; in the present application, as the pulling head 430 and the water-cooled heat shield body 510 move, the offset amplitude between the two will become larger and larger. By setting the third guide rod 810 to guide the pulling head 430, when the pulling head 430 moves from the bottom to the top in the crystal pulling channel 210a, the first rod body 811, which is longer than the second rod body 812, can adjust the deflection back through a larger swing amplitude.

[0074] Furthermore, the guide device 800 further includes a mounting flange 820, which is mounted on the top of the auxiliary furnace body 200. The mounting flange 820 has a plurality of degrees of freedom of movement in multiple directions, and is connected to the second end of the first rod body 811, so as to drive the rotation of the first rod body 811. Specifically, the mounting flange 820 is clamped on the outer side of the auxiliary furnace body 200 by a clamping member, and at least one adjusting device is provided on the mounting flange 820. The relative position of the mounting flange 820 can be changed by the adjusting action of the adjusting device. The adjusting device is preferably a threaded adjusting device. When the threaded adjusting device rotates, the adjusting rod abuts against the outer wall of the auxiliary furnace body 200, and the mounting flange 820 can be pushed to move in a direction away from the auxiliary furnace body 200 under the action of the reaction force; at the same time, the mounting flange 820 is connected to the first rod body 811, so as to drive the first rod body 811 to move. In one embodiment, there are multiple first rod bodies 811, and the multiple first rod bodies 811 are arranged in a ring on the outside of the water-cooled heat shield body 510; the multiple first rod bodies 811 are all connected to the mounting flange 820, and can drive the first rod bodies 811 to move under the action of the mounting flange 820, and further drive the water-cooled heat shield body 510 to move.

[0075] The present application also provides a crystal pulling method, comprising the following steps: dividing silicon core rods according to regions and labeling them in sequence; obtaining the length, diameter, and weight of the silicon core rods in different regions; obtaining the average growth of the silicon cores in each region; comparing the average growth of the silicon cores in different regions, and controlling the position of the water-cooled heat shield according to the comparison results.

[0076] Specifically, in one embodiment, the following steps are included:

[0077] S400, dividing the silicon core rods according to the regions and sequentially numbering them. In this embodiment, the silicon core rod group is sequentially arranged inside and outside, and the number of turns is 3 or more. During processing, the silicon core rod group is first divided according to the number of turns, and data of three groups of silicon core rod groups are sequentially obtained; at the same time, the silicon core rod group in this embodiment is arranged in a ring shape, and the silicon core rod group is divided into four identical silicon core rod groups according to the center line, and then the silicon core rod groups are sequentially numbered;

[0078] S500, obtaining the length, diameter and weight of silicon core rods in different areas, measuring the divided silicon core rod groups in turn by an externally arranged optical detection device and a weight detection device, and transmitting the measured data to a storage and judgment unit;

[0079] S600, obtaining the average growth of the silicon core in each area, and calculating based on the data obtained in the above step S500 to obtain the average values ​​of the length, diameter and weight of the silicon core rods in different components;

[0080] S700, compare the average growth of silicon cores in different areas, and control the position of the water-cooled heat shield device 510 according to the comparison result; compare the average value with the preset value to determine the growth of the silicon core rods, and when any of the average values ​​exceeds the preset value, determine that the growth of the silicon core rods is abnormal; specifically, first obtain the average value of the inner and outer circles in the silicon core rod group, and when any one or more of the three groups of average values ​​exceeds the preset value, determine that the growth of the inner and outer circles is unbalanced, and adjust the pulling heads of the inner and outer circles to different heights through the pulling device 400 to make the growth of the silicon core rod groups in the inner and outer circles tend to be consistent; secondly, obtain the average number of different positions in the same annular plane in the silicon core rod group, and when the average value of the silicon core rod group at any position deviates, determine the specific deviation, and adjust the position of the water-cooled heat shield body 510 through the position adjustment device 700 according to the deviation.

[0081] Specifically, in one embodiment, the silicon core positions are divided. In one embodiment, the silicon core rods arranged in an annular manner are divided into four groups, S1, S2, S3, and S4, along the center line according to the positions of the silicon core rods in the crystal pulling channel 210a. The growth of the silicon core rods in each group is monitored, and the obtained growth conditions are transmitted to the judgment unit. The growth conditions of the silicon core rods obtained in the previous step are obtained, and the position of the water-cooled heat shield is determined according to the growth conditions; in one embodiment, when the growth conditions of the silicon core rods in each of S1, S2, S3, and S4 are not much different and meet the requirements as a whole, the position of the water-cooled heat shield does not need to be adjusted; when at least one of S1, S2, S3, and S4 is abnormal, the abnormal condition is analyzed, and the problem of the water-cooled heat shield at this moment is determined according to the conditions pre-stored in the judgment unit.

[0082] In the prior art, when multiple silicon core rods are drawn at one time, the silicon core rods are generally divided into multiple inner and outer circles, and the heat field 1100 is set on the outside of the outermost silicon core rods, resulting in different growth states of the inner and outer circle silicon core rods during the drawing process, which leads to differences in the diameters of the silicon core rods, resulting in the risk of stuck holes, and reducing the productivity and yield of silicon core drawing.

[0083] The present application provides a silicon core growth furnace, including a pulling device 400, wherein the pulling device 400 includes at least a first mounting member 410 and a second mounting member 420 that can move in a vertical direction relative to the first mounting member 410, and a plurality of pulling heads 430 are respectively installed on the first mounting member 410 and the second mounting member 420; so that during the crystal pulling process, the second mounting member 420 can move relative to the first mounting member 410 along the axial direction of the crystal pulling channel 210a, so that silicon core rods at different positions are in the same crystal growth state, reducing the diameter difference between the inner and outer rings of the silicon core rods during the growth process, reducing the risk of stuck holes, and improving the productivity and yield of silicon core pulling.

[0084] In order to ensure the consistency between silicon cores, it is necessary to ensure that multiple silicon core rods are in the same growth environment as much as possible when pulling multiple silicon cores. The present application provides a new pulling device 400. The pulling device 400 is arranged in the crystal pulling channel 210a. The pulling device 400 has the freedom of movement along the crystal pulling channel 210a, and includes: a first mounting member 410, a second mounting member 420 and a pulling head 430. The second mounting member 420 and the first mounting member 410 are arranged along the axial direction of the crystal pulling channel 210a, and the second mounting member 420 is movably connected to the first mounting member 410. There are multiple pulling heads 430, and the multiple pulling heads 430 are respectively connected to the first mounting member 410 and the second mounting member 420.

[0085] Please refer to Fig.16 and Fig.17 Specifically, the pulling device 400 is used to pull silicon core rods, and the pulling process of the silicon core rods is completed by lifting the pulling head 430 in cooperation with the seed crystal. The pulling device 400 can move in the crystal pulling channel 210a along the axial direction of the crystal pulling channel 210a under the action of the lifting rope; the pulling device 400 includes a first mounting member 410 and a second mounting member 420 that are movably connected, and the second mounting member 420 can move along the axial direction of the crystal pulling channel 210a relative to the first mounting member 410. By connecting a plurality of pulling heads 430 to the first mounting member 410 and the second mounting member 420 respectively, different pulling heads 430 can move in the crystal pulling channel 210a at different speeds, and the growth state of the silicon core rods at different positions can be directionally adjusted; the silicon core rods at different positions are in the same crystal growth state, the diameter difference between the inner and outer rings during the growth of the silicon core rods is reduced, the risk of stuck holes is reduced, and the productivity and yield of silicon core pulling are improved.

[0086] Please refer to Fig.18 , the pulling heads 430 have multiple groups, and the multiple groups of pulling heads 430 are arranged in sequence from the inside to the outside, and each group of pulling heads 430 is arranged in a shape of a ring or a regular polygon. The number of the multiple pulling heads 430 is two or more, preferably more than thirty-two, and the pulling heads 430 can be arranged on the first mounting member 410 and the second mounting member 420 in a ring or regular polygonal manner. In one embodiment, the pulling heads 430 on the first mounting member 410 are arranged in a ring shape, and at least include two circles of pulling heads 430 that are mutually nested; the pulling heads 430 on the second mounting member 420 are located in the innermost circle, and during processing, the multiple pulling heads 430 located in the inner circle can be raised and lowered synchronously. It is conceivable that the pulling device 400 can also include more mounting members. By setting more mounting members, the positions of the pulling heads 430 are more diverse, which can better improve the productivity and yield rate of silicon core drawing.

[0087] For further information, please refer to Fig.19 , a movable channel 410a is provided on the first mounting member 410, and the movable channel 410a penetrates the first mounting member 410 along the axial direction of the crystal pulling channel 210a, and the movable channel 410a is used for the movement of the second mounting member 420. Specifically, by providing a movable channel in the first mounting member 410, the second mounting member 420 can move relative to the first mounting member 410; in one embodiment, the movable channel is a plurality of through holes penetrating the first mounting member 410, and the second mounting body includes a connecting rod, which can pass through the above-mentioned through holes, and the bottom of the connecting rod is connected to the pulling head 430, so that the pulling head 430 connected to the second mounting body can move to a different position from the pulling head 430 connected to the first mounting member 410.

[0088] For further information, please refer to Figures 16 to 19 The first mounting member 410 includes: an upper plate 411, a lower plate 412 and a second guide rod 413. The lower plate 412 is spaced below the upper plate 411, and a movable channel 410a is provided on the lower plate 412; a second guide rod 413 is disposed between the upper plate 411 and the lower plate 412, and a first end and a second end of the second guide rod 413 are respectively fixedly connected to the upper plate 411 and the lower plate 412. Specifically, in one embodiment, the upper plate 411 and the lower plate 412 are spaced apart, and a second guide rod 413 is fixedly disposed between the two, and the second guide rod 413 is used to support the upper plate 411 and the lower plate 412; the upper plate 411 and the lower plate 412 are respectively connected to the second guide rod 413 by screwing; preferably, the installation position of the upper plate 411 relative to the second guide rod 413 is adjustable and can be adjusted according to actual needs.

[0089] Further, the second mounting member 420 includes: a movable plate 421 and a connecting rod 422, the movable plate 421 is movably connected to the second guide rod 413, and the movable member is configured to reciprocate along the axial direction of the second guide rod 413; the first end of the connecting rod 422 is connected to the fixing member, the second end of the connecting rod 422 is connected to the lifting head 430, and the connecting rod 422 is configured to reciprocate along the vertical direction in the movable channel 410a. The movable plate 421 is arranged between the upper plate body 411 and the lower plate body 412, the movable plate 421 is movably connected to the second guide rod 413, and the movable plate 421 and the second guide rod 413 are slidably matched; in one embodiment, the second guide rod 413 passes through the movable plate 421, and the movable plate 421 can move along the axial direction of the second guide rod 413.

[0090] Please refer to Fig.17 and Fig.18 The lifting device 400 further includes a rotating drive assembly 440, which is mounted on the fixed member. The rotating drive assembly 440 includes: an output member 441 and a transmission member 442. The output member 441 is located at the central part of the movable plate 421; there are multiple transmission members 442, which are arranged around the output member 441, and the transmission members 442 are arranged corresponding to the lifting head 430. Specifically, in one embodiment, the rotating drive assembly 440 includes an output shaft and multiple gears, which are mounted on the lower plate 412, and the gears are movably connected to the lower plate 412 through bearings, and any gear can rotate independently; at the same time, the gears are fixedly connected to the lifting head 430, and the gears can drive the lifting head 430 to rotate synchronously when rotating; there are multiple gears, and the multiple gears are arranged in cooperation with the lifting head 430, and each lifting head 430 is correspondingly provided with an independent gear.

[0091] Please refer to Fig.16 The lifting device 400 also includes a lifting drive assembly 450, which is mounted on the upper plate body 411. The vertical transmission device includes at least one movable end, which has a degree of freedom of movement in the vertical direction, and the movable end is connected to the movable part to drive the movement of the movable part. The lifting drive unit includes a driving motor and a screw assembly. The screw in the screw assembly is installed on the first mounting member 410, and the screw is preferably installed between the upper plate body 411 and the lower plate body 412; the rotating nut in the screw assembly is connected to the movable plate 421, and when the nut is lifted and lowered along the screw, the movable plate 421 is driven to move synchronously. The driving motor is installed at the top of the first mounting member 410, that is, the driving motor is installed on the upper end surface of the upper plate body 411, and the screw passes through the upper plate body 411 and is connected to the movable plate 421.

[0092] The device also includes a limit unit 900, which is connected to the movable part and is used to limit the movement of the movable part. Fig.16The limiting unit 900 is installed and connected to the movable plate 421. The limiting unit 900 is arranged between the upper plate body 411 and the lower plate body 412. The limiting unit 900 protrudes from the protruding portion arranged on the movable plate 421. The limiting unit 900 can contact the first mounting member 410 before the movable plate 421 to limit the moving distance of the movable plate 421. It is conceivable that the limiting unit 900 can also adopt other limiting elements, such as an optical limiting unit 900, etc.

[0093] During the silicon core rod drawing process, as the silicon core is drawn, the liquid level in the crucible 110 will also drop. In order to maintain the distance between the liquid surface and the silicon core rod, the crucible 110 needs to be controlled to continue to rise. In the prior art, as the crucible 110 continues to rise, the distance between the fixed thermal field 1100 and the crucible will also change; this will cause the thermal field 1100 to reduce the heat supply to the silicon liquid, and the temperature of the liquid surface in the crucible 110 will change; in the prior art, if the liquid temperature drops during the operation, it is generally compensated and adjusted by increasing the liquid temperature, and at the same time, the liquid temperature is increased by increasing the power of the thermal field 1100. However, since the thermal field has a certain hysteresis in the process of increasing the liquid temperature, it will cause the center of the liquid surface of the silicon liquid in the crucible to crystallize, which will lead to the failure of silicon core drawing, and reduce the yield and production efficiency of the silicon core.

[0094] In the present application, by setting up a synchronous lifting device 1000, the crucible 110 and the heat field 1100 can be driven to move synchronously, so that during the silicon core rod pulling process of the silicon core growth furnace, the distance between the heater 1110 in the heat field 1100 and the crucible 110 is always kept constant, eliminating the lag when the liquid surface temperature increases, avoiding the failure of silicon core drawing, and improving the yield and production efficiency of the silicon core.

[0095] Furthermore, the silicon core growth furnace further includes a synchronous lifting device 1000 and a thermal field 1100. The synchronous lifting device 1000 is disposed below the crucible 110. Fig. 20, the synchronous lifting device 1000 includes a lifting end, which has a vertical degree of freedom of movement; the heat field 1100 is arranged around the periphery of the crucible 110, and the heat field 1100 is connected to the lifting end. Under the action of the synchronous lifting device 1000, the heat field 1100 can be lifted and lowered synchronously with the crucible 110. Specifically, the synchronous lifting device 1000 is arranged below the crucible 110 to drive the heat field 1100 to rise and fall together with the crucible 110; wherein, the heat field 1100 mainly includes a heater 1110 located at the bottom of the crucible 110. Since the distance between the heater 1110 located around the crucible 110 and the crucible 110 remains stable during the rising process of the crucible 110, and the distance between the heater 1110 located at the bottom and the crucible 110 will change, the synchronous lifting device 1000 in the present application mainly drives the bottom heater 1110 to move together. In some embodiments, the heater 1110 also includes a heater 1110 disposed around the crucible 110. Such an arrangement can avoid the situation where the distance between the crucible 110 and the thermal field 1100 changes due to the excessive rise of the crucible 110, which further causes the temperature to change. The synchronous lifting device 1000 includes at least one moving end with a degree of freedom of movement in the vertical direction, and the moving end is connected to the crucible 110 by a bolt and a magnetic fluid, and can drive the crucible 110 to rise and fall synchronously while ensuring the rotation of the crucible 110. By setting up the synchronous lifting device 1000, the crucible 110 and the thermal field 1100 can be driven to move synchronously, so that during the process of pulling the silicon core rod of the silicon core growth furnace, the distance of the heater 1110 in the thermal field 1100 is always kept constant with the crucible 110, eliminating the hysteresis when the liquid surface temperature increases, avoiding the failure of silicon core pulling, and improving the yield rate and production efficiency of the silicon core.

[0096] For further information, please refer to Figure 20 to Figure 22 The synchronous lifting device 1000 includes: a first motor 1010 and a motor water cooling section 1020, the first motor 1010 is connected to the thermal field 1100; the motor water cooling section 1020 is sleeved on the outside of the first motor 1010. Specifically, the heater 1110 in the present application is powered and heated by the first motor 1010, and the first motor 1010 is arranged through the mounting plate 1030 at the bottom of the main furnace body 100. During the heating process, the first motor 1010 may be affected by the heat of the thermal field 1100 and its own self-heating, thereby affecting the service life of the first motor 1010; in the present application, the motor water cooling section 1020 is arranged between the first motor 1010 and the crucible 110, and the first motor 1010 will pass through the motor water cooling section 1020 when the synchronous lifting device 1000 is lifted and lowered, and the motor water cooling section 1020 can cool the first motor 1010 to ensure the service life of the first motor 1010.

[0097] Please refer to Figure 20 to Figure 22The synchronous lifting device 1000 includes: a mounting plate 1030 and a support frame 1040. The mounting plate 1030 is provided with at least one mounting channel, and the mounting channel is used to install the rotating shaft of the crucible 110. The support frame 1040 is installed on the mounting plate 1030. The support frame 1040 has multiple support frames 1040, and the multiple support frames 1040 are evenly arranged on the mounting plate 1030. The support frame 1040 is used to form a lifting end. Specifically, the rotating shaft of the crucible 110 is preferably a crucible 110 rotating body, and the crucible 110 rotating body can drive the crucible 110 to rotate. In one embodiment, the crucible 110 rotating body passes through the mounting channel on the mounting plate 1030 and is connected to the crucible 110 to drive the crucible 110 to rotate and lift. The support frame 1040 is arranged on the mounting plate 1030, and the support frame 1040 and the mounting plate 1030 are fixedly connected by bolts; there are multiple support members, and the multiple number of support members is two or more. By setting up multiple pairs of support frames 1040, they are respectively used to install the second motor 1120. The multiple second motors are arranged one by one with the first motor 1010 to complete the connection and support with the bottom thermal field part in the thermal field 1100.

[0098] The synchronous lifting device 1000 also includes a mounting base plate, which is used to mount the crucible 110. The crucible 110 is connected to the mounting base plate by bolts and flanges. At the same time, the mounting base plate is connected to the mounting frame. When the mounting frame is driven by an external driving device to be lifted or lowered, it can drive the mounting base plate to be lifted or lowered, and synchronously drive the crucible 110 to be lifted or lowered.

[0099] Please continue to refer to Fig. 20 and Fig. 22 The support frame 1040 includes: an upper frame 1041 and a lower frame 1042, the upper frame 1041 is connected to the motor unit; the lower frame 1042 is arranged below the upper frame 1041, and the lower frame 1042 is connected to the mounting plate 1030; and a flexible connector 1043, the flexible connector 1043 is arranged between the upper frame 1041 and the lower frame 1042, and the flexible connector 1043 is respectively abutted against the upper frame 1041 and the lower frame 1042. Specifically, the upper frame 1041 and the lower frame 1042 are spaced apart and connected with a flexible connector 1043. In one embodiment, mounting holes are provided on the upper frame 1041 and the lower frame 1042, and the guide rod can pass through the mounting holes to connect the upper frame 1041 and the lower frame 1042. At least one mounting groove is provided on the upper frame 1041 or the lower frame 1042, and the flexible connector 1043 is installed in the mounting groove to ensure that the first motor 1010 can be lifted and lowered smoothly during lifting.

[0100] Please refer to Fig.21The thermal field 1100 includes at least one heater 1110, which is spaced apart from the bottom of the crucible 110. Specifically, the bottom heater 1110 is preferably a heating coil, which can generate heat by itself under the action of an external power supply, and can heat the silicon solution in the crucible 110 by self-heating. In this embodiment, the heater 1110 is preferably flat, and is spaced apart from the bottom of the crucible 110.

[0101] For further information, please continue to refer to Fig.21 The thermal field 1100 further includes a second motor 1120, which is coaxially arranged with the first motor 1010 and is detachably connected to the first motor 1010. The second motor 1120 is connected to the bottom heating element and is used to supply power to the bottom heater 1110. One end of the second motor 1120 is fixedly connected to the heater 1110, and is combined with the bottom heating element to form a part of the thermal field 1100; at the same time, the other end of the second motor 1120 is detachably connected to the first motor 1010, and the first motor 1010 can drive the second motor 1120 to rise and fall synchronously when lifting; when work is needed, the first motor 1010 and the second motor 1120 are in contact with each other, and when work is not needed, the two motors only need to be disconnected.

[0102] Please refer to Fig. 22 The synchronous lifting device 1000 further includes a bellows 1050, which is disposed between the support frame 1040 and the motor water cooling section 1020, and is sleeved on the outside of the first motor 1010. In one embodiment, the first motor 1010 includes a ceramic protective sleeve and a motor body disposed in the ceramic protective sleeve. The first motor 1010 is protected by the bellows 1050 to increase the service life of the first motor 1010 and to avoid the influence of high temperature on the first motor 1010. The bellows 1050 is preferably installed on the upper end surface of the upper frame 1041 by screw connection, and the bellows 1050 can be extended and retracted synchronously with the lifting and lowering of the synchronous lifting device 1000.

[0103] Technical effect:

[0104] 1. The present application provides a silicon core growth furnace, in which a furnace driving device 300 is respectively connected to a first auxiliary furnace body 210 and a second auxiliary furnace body 220, and is used to control the first auxiliary furnace body 210 and the second auxiliary furnace body 220 to be respectively connected to a main furnace body 100. The state of the silicon core growth furnace can be directly changed without changing the internal arrangement of the auxiliary furnace body 200, thereby simplifying the re-investment steps, saving the re-investment time, improving the silicon core drawing efficiency, and reducing the silicon core drawing cost.

[0105] 2. The present application provides a silicon core growth furnace, wherein a position adjustment device 700 comprises at least one adjustment member. Since the adjustment member has the freedom of movement in multiple directions, it can move in multiple directions. By arranging the position adjustment device 700 to drive the water-cooled heat shield device 500 to move synchronously, the water-cooled heat shield device 500 can adjust the temperature of the liquid surface inside and outside the crucible accordingly, so that the corresponding crystal growth states of the pulling heads at different heights when pulling the silicon core rod are close to the same, thereby reducing the diameter difference between the inner and outer circles during the growth process of the silicon core rod and improving the yield rate.

[0106] 3. The present application provides a silicon core growth furnace, including a pulling device 400, wherein the pulling device 400 includes at least a first mounting member 410 and a second mounting member 420 that can move in a vertical direction relative to the first mounting member 410, and a plurality of pulling heads 430 are respectively installed on the first mounting member 410 and the second mounting member 420; so that during the crystal pulling process, the second mounting member 420 can move relative to the first mounting member 410 along the axial direction of the crystal pulling channel 210a, so that silicon core rods at different positions are in the same crystal growth state, reducing the diameter difference between the inner and outer rings of the silicon core rods during the growth process, reducing the risk of stuck holes, and improving the productivity and yield of silicon core pulling.

[0107] 4. The present application provides a silicon core growth furnace, which can drive the crucible 110 and the heat field 1100 to move synchronously by setting a synchronous lifting device 1000, so that during the silicon core rod pulling process of the silicon core growth furnace, the distance between the heater 1110 in the heat field 1100 and the crucible 110 is always kept constant, thereby eliminating the lag when the liquid surface temperature increases, avoiding the failure of silicon core drawing, and improving the yield and production efficiency of the silicon core.

Claims

1. A silicon core growth furnace, characterized in that: include: A main furnace body (100), wherein a crucible (110) is arranged in the main furnace body (100); An auxiliary furnace body (200), wherein the auxiliary furnace body (200) is arranged above the main furnace body (100), and the auxiliary furnace body (200) is connected with the main furnace body (100) to form a crystal pulling channel; A pulling device (400), the pulling device (400) comprising a pulling head (430), the pulling head (430) having a plurality of pulling heads (430), the pulling head (430) being located in the crystal pulling channel, and the pulling head (430) having a degree of freedom of movement in a vertical direction; A water-cooled heat shield device (500), the water-cooled heat shield device (500) comprising: A water-cooled heat shield body (510), the water-cooled heat shield being located in the crystal pulling channel, the water-cooled heat shield body (510) comprising at least one cooling channel, the cooling channel being used for the pulling head (430) to pass through, the water-cooled heat shield body (510) having a degree of freedom of movement in a vertical direction; A lifting component (520), wherein the lifting component (520) is installed on the auxiliary furnace body (200), and the lifting component (520) is connected to the water-cooled heat shield body (510); as well as A position adjustment device (700), the position adjustment device (700) is connected to the water-cooled heat shield device (500) and is used to adjust the position of the water-cooled heat shield.

2. The silicon core growth furnace according to claim 1, characterized in that: The invention also comprises a guide device (800), wherein the guide device (800) comprises at least one third guide rod (810), wherein the third guide rod (810) is arranged in the crystal pulling channel, and the third guide rod (810) is used to limit the moving direction of the water-cooled heat shield; the third guide rod (810) comprises: A first rod body (811), wherein a first end of the first rod body (811) is fixedly connected to the auxiliary furnace body (200); The second rod (812) is hingedly connected to the second end of the first rod (811) and the first end of the second rod (812), and the second rod (812) has a rotational freedom around the hinge point.

3. The silicon core growth furnace according to claim 2, characterized in that: The guide device (800) also includes a mounting flange (820), which is mounted on the top of the auxiliary furnace body (200), and the mounting flange (820) has a plurality of degrees of freedom of movement in multiple directions. The mounting flange (820) is connected to the second end of the second rod body (812), and the mounting flange (820) is used to drive the second rod body (812) to rotate.

4. The silicon core growth furnace according to claim 2, characterized in that: The length of the first rod body (811) is greater than the length of the second rod body (812).

5. The silicon core growth furnace according to claim 1, characterized in that: The position adjustment device (700) comprises a built-in driving block (710), the built-in driving block (710) is arranged in the crystal pulling channel, the built-in driving block (710) is connected to the water-cooled heat shield body (510), the built-in driving block (710) has at least a degree of freedom of movement in a horizontal direction, and the built-in driving block (710) is used to drive the displacement of the water-cooled heat shield in a horizontal direction.

6. The silicon core growth furnace according to claim 5, characterized in that: The position adjustment device (700) further comprises an external driving component (720), wherein the external driving component (720) is provided in plurality, and the plurality of external driving components (720) are arranged around the outer wall of the auxiliary furnace body (200), and the output end of the driving component passes through the auxiliary furnace body (200) and is connected to the internal driving block (710).

7. The silicon core growth furnace according to claim 1, characterized in that: The position adjustment device (700) includes a first drive component (730), which is installed on the outer wall of the auxiliary furnace body (200), and the output end of the first drive component (730) is connected to the lifting member, and the output end of the first drive component (730) has at least the freedom of movement along the first direction and / or the second direction.

8. The silicon core growth furnace according to claim 7, characterized in that: The first drive assembly (730) comprises: A mounting ring (731), wherein the mounting ring (731) is connected to the auxiliary furnace body (200); A first moving member (732), the first moving member (732) is slidably connected to the mounting ring (731), and the first moving member (732) has a degree of freedom of movement along a first direction; and A second movable member (733), wherein the first end of the second movable member (733) is fixedly connected to the lifting member, and the second end of the second movable member (733) is slidably connected to the first movable member (732), and the second movable member (733) has the freedom of movement along the second direction.

9. The silicon core growth furnace according to claim 1, characterized in that: The main furnace body (100) further comprises an isolation valve (130), wherein the isolation valve (130) is arranged at the upper part of the main furnace body (100), the isolation valve (130) is connected to the auxiliary furnace body (200), and the isolation valve (130) is used to control the connection and closing of the main furnace body (100) and the auxiliary furnace body (200).

10. A method for controlling silicon material growth, used in the silicon core growth furnace according to any one of claims 1 to 9, characterized in that: include: Divide according to the position of silicon core to obtain the growth of silicon core in different groups; Adjust the direction of the water-cooled heat shield according to the growth conditions; Obtaining the growth condition includes: Divide the silicon materials by region and label them sequentially; Obtain one or more of the length, diameter, and weight of silicon materials in different areas; Get the average growth of silicon cores in each area; Compare the average growth of silicon cores in different areas and control the position of the water-cooled heat shield based on the comparison results.