Solid-state power amplifier heat loss calculation method based on electrothermal coupling

Abstract

The invention discloses a solid-state power amplifier heat loss calculation method based on electrothermal coupling, and the method comprises the steps: building an electromagnetic thermal simulation model of a power amplifier product, carrying out the analysis of the electromagnetic thermal simulation model, obtaining the electromagnetic field intensity distribution data, calculating the electromagnetic power loss according to the electromagnetic field intensity distribution data through employing the Phikenting theorem, and calculating the heat loss of the solid-state power amplifier. Determining temperature field distribution data of the power amplifier product based on the electromagnetic power loss, calculating a dielectric constant and conductivity after temperature change according to the temperature field distribution data, and outputting target temperature field distribution data until the dielectric constant and the conductivity meet threshold values so as to evaluate the power amplifier product; the coupling relation between the electromagnetic field and the thermal field is established through the loss power and the material changing along with the temperature, extra heat caused by large standing waves in a microwave link structure of the output end of the power amplifier chip can be accurately calculated, overall temperature distribution can be evaluated, the high-temperature burnout risk of a solid-state power amplifier product is avoided, and therefore the reliability of the product is improved.

Description

Technical Field

[0001] The present application relates to the technical field of modeling and simulation, and in particular to a method for calculating heat loss of a solid-state power amplifier based on electrothermal coupling. Background Art

[0002] Microwave solid-state power amplifiers are favored in many fields due to their advantages of high speed, high efficiency and small size. They are widely used in modern wireless communications, satellite transceiver equipment, radar, telemetry and remote control systems, etc. High-power microwave solid-state power amplifiers must work under high current driving conditions, which means that a lot of DC power consumption will be generated. With the development of integrated circuits, more and more active devices are integrated per unit area, and the power consumption density is getting higher and higher. If the heat generated cannot be dissipated in time, the temperature will rise significantly, which will directly affect the performance of the power amplifier product. In addition, in the case of a large mismatch at the output end of the solid-state power amplifier, the large standing wave in the microwave link structure at the output end of the power amplifier will generate additional heat, posing a high temperature threat to the solid-state power amplifier product, and even causing problems such as burning. Therefore, a thermal analysis model needs to be constructed in the design stage, and the product stability can be improved through the optimization of the product thermal design.

[0003] Although there are currently a variety of thermal analysis solutions, compared to traditional CMOS integrated circuits, RF microwave solid-state power amplifiers have high signal frequency, high power density, and more complex structure. It is urgent to accurately calculate the additional heat caused by the large standing waves in the microwave link structure at the output end of the power amplifier chip, evaluate the overall temperature distribution of the amplifier, and avoid the risk of high-temperature burning of solid-state power amplifier products. Summary of the invention

[0004] In view of the above problems, the present application provides a solid-state power amplifier heat loss calculation method based on electrothermal coupling to at least solve the problems existing in the related art.

[0005] In a first aspect, an embodiment of the present application provides a method for calculating heat loss of a solid-state power amplifier based on electrothermal coupling, comprising:

[0006] Establish electromagnetic heat simulation model for power amplifier products;

[0007] Analyzing the electromagnetic thermal simulation model to obtain electromagnetic field intensity distribution data;

[0008] Calculate electromagnetic power loss using Poynting theorem according to the electromagnetic field intensity distribution data;

[0009] Determining temperature field distribution data of the power amplifier product based on the electromagnetic power loss;

[0010] The dielectric constant and the conductivity after the temperature change are calculated according to the temperature field distribution data, and when the dielectric constant and the conductivity meet a threshold value, the target temperature field distribution data is output to evaluate the power amplifier product.

[0011] In some embodiments, the calculating electromagnetic power loss using Poynting's theorem according to the electromagnetic field intensity distribution data includes:

[0012] Determine, based on the electromagnetic field intensity distribution data, the increase in electromagnetic field energy, electric field energy, and magnetic field energy of the closed space volume corresponding to the power amplifier product and the work done by the electric field on the closed space;

[0013] Based on Poynting's theorem, a calculation formula is established in which the electromagnetic field energy is equivalent to the sum of the increase in the electric field energy and the magnetic field energy and the work done by the electric field on the closed space, so as to obtain the dielectric constant and the conductivity before the temperature changes;

[0014] Calculate the electromagnetic power loss based on the dielectric constant and conductivity before temperature change.

[0015] In some embodiments, the calculating electromagnetic power loss based on the dielectric constant and the conductivity before the temperature change includes:

[0016] Determining the material type of the power amplifier product, wherein the material type includes magnetic material and non-magnetic material;

[0017] The electromagnetic power loss is calculated based on the dielectric constant and the conductivity before the temperature change using a calculation method corresponding to the material type.

[0018] In some embodiments, the solid-state power amplifier heat loss calculation method based on electrothermal coupling further includes:

[0019] Set the material parameters and operating conditions of the power amplifier product.

[0020] In some embodiments, the step of calculating the dielectric constant and the conductivity after the temperature change according to the temperature field distribution data until the dielectric constant and the conductivity meet a threshold value, and outputting the target temperature field distribution data to evaluate the power amplifier product includes:

[0021] Calculate the dielectric constant and conductivity after the temperature change based on the temperature data and the temperature change data in the temperature field distribution data;

[0022] When the dielectric constant and the conductivity meet the threshold value, output the target temperature field distribution data;

[0023] Generate a temperature field distribution diagram according to the target temperature field distribution data, and the corresponding extreme points reached by each material during the operation of the power amplifier product;

[0024] The extreme point is compared with the material parameters and / or operating conditions to evaluate the operating risk of the power amplifier product.

[0025] In some embodiments, the step of comparing the extreme point with the material parameter and / or the operating condition to evaluate the operating risk of the power amplifier product includes:

[0026] When the temperature corresponding to the extreme point is greater than the material parameter, it is determined that the power amplifier product has a risk of high temperature burning;

[0027] When the extreme value point does not meet the operating condition, it is determined that the power amplifier product has an operating fault.

[0028] In some embodiments, the solid-state power amplifier heat loss calculation method based on electrothermal coupling further includes:

[0029] Determining whether the dielectric constant and the conductivity meet a threshold value;

[0030] When the dielectric constant and the conductivity do not meet the threshold value, the step is returned to calculate the electromagnetic power loss using the Poynting theorem according to the electromagnetic field intensity distribution data.

[0031] In a second aspect, an embodiment of the present application provides a solid-state power amplifier heat loss calculation device based on electrothermal coupling, comprising:

[0032] The acquisition module is used to acquire a data set, wherein the data set includes: an original data set and a synthetic data set generated by using a model based on the original data set.

[0033] The processing module is used to perform standardization processing on the data set to obtain a standardized data set, wherein the standardized data set includes: a standardized original data set and a standardized synthetic data set.

[0034] A determination module is used to input the standardized data set into a pre-established analysis model to determine a cumulative variance explanation index and a Jensen-Shannon divergence, wherein the Jensen-Shannon divergence is determined based on the similarity of the probability distributions of the standardized original data set and the standardized synthetic data set.

[0035] An evaluation module is used to perform weighted average processing on the cumulative variance explanation index and the Jensen-Shannon divergence to construct an evaluation model, and evaluate the synthesis quality of the synthetic data set according to the evaluation model.

[0036] In a third aspect, an embodiment of the present application provides an electronic device, comprising a memory and a processor, wherein the memory stores a program code that can be executed on the processor, and when the program code is executed by the processor, a solid-state power amplifier heat loss calculation method based on electrothermal coupling as described in any implementation method of the first aspect is implemented.

[0037] In a fourth aspect, an embodiment of the present application provides a computer storage medium storing one or more programs, which can be executed by an electronic device as described in the third aspect to implement a solid-state power amplifier heat loss calculation method based on electrothermal coupling as described in any implementation method of the first aspect.

[0038] The embodiments of the present application provide a solid-state power amplifier heat loss calculation method, device, electronic device and storage medium based on electrothermal coupling, which establishes an electromagnetic thermal simulation model of the power amplifier product, analyzes the electromagnetic thermal simulation model to obtain electromagnetic field intensity distribution data, calculates electromagnetic power loss based on the electromagnetic field intensity distribution data using Poynting's theorem, determines the temperature field distribution data of the power amplifier product based on the electromagnetic power loss, calculates the dielectric constant and conductivity after temperature change based on the temperature field distribution data, and outputs the target temperature field distribution data until the dielectric constant and conductivity meet the threshold value, so as to evaluate the power amplifier product, and establish the coupling relationship between the electromagnetic field and the thermal field through the loss power and the material properties that change with temperature. In the case of large mismatch, it can be analyzed to accurately calculate the additional heat caused by the large standing wave in the microwave link structure at the output end of the power amplifier chip, evaluate the overall temperature distribution of the amplifier, avoid the risk of high temperature burnout of the solid-state power amplifier product, and thus improve the reliability of the product as a whole.

[0039] It should be understood that the content described in this section is not intended to identify the key or important features of the embodiments of the present application, nor is it intended to limit the scope of the present application. Other features of the present application will become easily understood through the following description. BRIEF DESCRIPTION OF THE DRAWINGS

[0040] Hereinafter, the present application will be described in more detail based on embodiments and with reference to the accompanying drawings.

[0041] Figure 1 A schematic flow chart of a solid-state power amplifier heat loss calculation method based on electrothermal coupling proposed in an embodiment of the present application is shown;

[0042] Figure 2 An exemplary implementation process of a solid-state power amplifier heat loss calculation method based on electrothermal coupling proposed in an embodiment of the present application is shown;

[0043] Figure 3 An exemplary solid-state power amplifier geometric structure model of an electromagnetic thermal simulation model integrated with a thermoelectric coupling iterative simulation software interface in an embodiment of the present application is shown;

[0044] Figure 4 The geometric structure model of the microwave link at the output end of the microwave solid-state power amplifier chip in an electromagnetic thermal simulation model proposed in one embodiment of the present application is shown;

[0045] Figure 5 The electric field distribution of a solid-state power amplifier under a mismatch condition of 10:1 in an electromagnetic thermal simulation model proposed in one embodiment of the present application is shown;

[0046] Figure 6 The temperature field distribution of a solid-state power amplifier under a mismatch condition of 10:1 in an electromagnetic thermal simulation model proposed in one embodiment of the present application is shown;

[0047] Figure 7 A structural block diagram of a solid-state power amplifier heat loss calculation device based on electrothermal coupling proposed in an embodiment of the present application is shown;

[0048] Figure 8 A structural block diagram of an electronic device for executing a solid-state power amplifier heat loss calculation method based on electrothermal coupling according to an embodiment of the present application is shown;

[0049] Fig. 9 A computer-readable storage medium for storing or carrying a method for calculating heat loss of a solid-state power amplifier based on electrothermal coupling according to an embodiment of the present application is shown. DETAILED DESCRIPTION

[0050] In order to make the objectives, technical solutions and advantages of the present invention more clearly understood, the present invention is further described in detail below in conjunction with embodiments and drawings. The exemplary embodiments of the present invention and their description are only used to explain the present invention and are not intended to limit the present invention.

[0051] In the related art, simulation based on a single temperature field is usually used in analyzing the influence of physical factors on the temperature field distribution and the design of the thermal system. A constant heat source is used, and the heat transfer process is focused on for detailed calculation. It can accurately simulate and determine the temperature distribution under power consumption conditions, but ignores the electrothermal coupling characteristics of the system. The commonly used traditional electrothermal coupling iteration method, by establishing a relatively simple thermal model and circuit model, is more suitable for CMOS integrated circuits with low power consumption density and temperature rise, and can reach convergence through only a few iterations. Another commonly used method is the equivalent circuit method, which converts the heat conduction network into an RC equivalent circuit and embeds it into the circuit simulator to obtain a unified circuit system containing electrothermal effects. This method has a huge workload for numerical conversion methods and a high analytical solution accuracy, but it is only applicable to one-dimensional or two-dimensional heat flow situations with simple calculation domain shapes. Another commonly used method is the decoupling iteration method, which is composed of an electrical subsystem and a thermal subsystem. The two systems are coupled to each other. The power consumption of the electrical components is used as the heat source of the thermal network, and the temperature distribution in the thermal network will affect the circuit performance of the electrical system. This method assumes that the electrical subsystem and the thermal subsystem are relatively independent, simulates them separately, and iterates the calculation results until the convergence conditions are met.

[0052] In the study of related technologies, it was found that compared with traditional CMOS integrated circuits, RF microwave solid-state power amplifiers have high signal frequency, high power density and more complex structure. In order to correctly evaluate the temperature distribution of the amplifier, a high-precision and high-efficiency temperature analysis method is required. In the case of large mismatch, the additional heat caused by the large standing waves in the microwave link structure at the output end of the power amplifier chip can be accurately calculated, the overall temperature distribution of the amplifier can be evaluated, and the risk of high-temperature burning of solid-state power amplifier products can be avoided.

[0053] In response to the above problem description, the applicant proposed a solid-state power amplifier heat loss calculation method, device, electronic device and storage medium based on electrothermal coupling provided in the embodiments of the present application, in order to realize a high-precision and high-efficiency temperature analysis method, deeply integrate the power balance equation and the dielectric and conductive properties of the material, and establish the coupling relationship between the electromagnetic field and the thermal field through the loss power and the material properties that change with temperature. In the case of large-proportion mismatch, the analysis accurately calculates the additional heat caused by the large standing wave in the microwave link structure at the output end of the power amplifier chip, evaluates the overall temperature distribution of the amplifier, avoids the risk of high-temperature burning of the solid-state power amplifier product, and thus improves the reliability of the power amplifier product as a whole. Among them, the solid-state power amplifier heat loss calculation method based on electrothermal coupling is described in detail in the subsequent embodiments.

[0054] The following is an introduction to the application scenarios of the solid-state power amplifier heat loss calculation method based on electrothermal coupling provided in the embodiment of the present application:

[0055] See also Figure 1 , Figure 1 FIG. 1 is a flow chart of a solid-state power amplifier heat loss calculation method based on electrothermal coupling provided in an embodiment of the present application. In this embodiment, the solid-state power amplifier heat loss calculation method based on electrothermal coupling can be applied to Figure 7 The evaluation device 300 of the power amplifier product shown is Figure 8 In the electronic device 200 shown, the electronic device may include one or more electronic devices, and information may be transmitted between the multiple electronic devices by wireless and / or wired means. The multiple electronic devices may collaborate to complete the solid-state power amplifier heat loss calculation method based on electrothermal coupling. For example, the electronic device may include a mobile terminal, a computer, a tablet, etc., which is not limited in this application. Figure 1 The process shown is described in detail, and the solid-state power amplifier heat loss calculation method based on electrothermal coupling may include S110 to S150.

[0056] S110: Establish an electromagnetic heat simulation model for power amplifier products.

[0057] In the embodiment of the present application, the electromagnetic simulation model of the power amplifier product can be created in the electronic device 200 by using the commercial software HFSS. Taking a solid-state amplifier as an example, the power amplifier product can include a heat source model of the power amplifier chip and a microwave structure at the output end of the power amplifier chip, such as gold wire, microstrip line, insulator and other structures. The structural model can be exported and imported into ICEPAK to construct a thermal simulation structural model to jointly construct an electromagnetic thermal simulation model.

[0058] In some embodiments, the solid-state power amplifier heat loss calculation method based on electrothermal coupling may further include S210.

[0059] S210: Set material parameters and working conditions of the power amplifier product.

[0060] In the embodiment of the present application, on the one hand, the material parameters of the power amplifier product are set, including: setting the material electromagnetic property parameters in HFSS and setting the heat transfer property parameters in ICEPAK. On the other hand, the operating conditions of the power amplifier product are set, including the setting of multiple operating conditions, such as load impedance adaptation conditions, load impedance mismatch ratio 5:1 conditions, load impedance mismatch 10:1 conditions, etc.

[0061] S120: Analyze the electromagnetic thermal simulation model to obtain electromagnetic field intensity distribution data.

[0062] In the embodiment of the present application, the electromagnetic field intensity distribution can be obtained by calling HFSS simulation solution in the background.

[0063] S130: Calculate the electromagnetic power loss using Poynting's theorem based on the electromagnetic field intensity distribution data.

[0064] In the embodiment of the present application, after acquiring the electromagnetic field intensity distribution data, the integrated software calculates the electromagnetic power loss according to the Poynting theorem power balance equation, wherein the electromagnetic power loss is used as a thermal load to solve the temperature field.

[0065] S140: Determine temperature field distribution data of the power amplifier product based on the electromagnetic power loss.

[0066] In an embodiment of the present application, the integrated software can drive ICEPAK through a script to solve the temperature field. After the solution is completed by using electromagnetic power loss as the thermal load for solving the temperature field, the corresponding temperature field distribution diagram can be rendered and the temperature field distribution data can be extracted.

[0067] S150: Calculate the dielectric constant and conductivity after the temperature change according to the temperature field distribution data, until the dielectric constant and the conductivity meet the threshold value, and then output the target temperature field distribution data to evaluate the power amplifier product.

[0068] In some embodiments, the method for calculating heat loss of a solid-state power amplifier based on electrothermal coupling further includes:

[0069] Determine whether the dielectric constant and conductivity meet the threshold value;

[0070] When the dielectric constant and the conductivity do not meet the threshold value, the process returns to S130 and uses Poynting's theorem to calculate the electromagnetic power loss according to the electromagnetic field intensity distribution data, so as to cycle through S130-S150 to obtain stable dielectric constant and conductivity data.

[0071] In an embodiment of the present application, the dielectric constant and conductivity after temperature change are calculated based on the temperature field distribution data, and the changes in the calculated dielectric constant and conductivity are evaluated. When the threshold value (threshold value) is met, for example, if the threshold value is set to 5%, and the changes in the dielectric constant and conductivity are lower than this value, the corresponding target temperature field distribution data are output, wherein the target temperature field distribution data can be displayed as a temperature distribution cloud map, and the power amplifier product can be evaluated through the target temperature field distribution data based on the dielectric constant and conductivity that meet the threshold value under the current electromagnetic power loss and temperature change conditions. For example, if the temperature of the power amplifier product is too high under operating conditions, there is a risk of burning some structural materials.

[0072] Taking into account in order to further improve the high-precision analysis of power amplifier products.

[0073] In some embodiments, S130 includes S131 to S133.

[0074] S131: Determine the increase in electromagnetic field energy, electric field energy and magnetic field energy of the closed space volume corresponding to the power amplifier product and the work done by the electric field on the closed space based on the electromagnetic field intensity distribution data.

[0075] S132: Based on Poynting's theorem, a calculation formula is established to calculate the electromagnetic field energy equivalent to the sum of the increase in electric field energy and magnetic field energy and the work done by the electric field on the closed space, so as to obtain the dielectric constant and conductivity before the temperature changes.

[0076] In the embodiment of the present application, the calculation formula is:

[0077]

[0078] Where σ is the dielectric constant, ε is the electrical conductivity, μ is the magnetic permeability, E is the electric field, H is the magnetic field, and w is e is the electric field energy density, w m is the magnetic field energy density, and V is the volume of the closed space.

[0079] Among them, the left side of the equation is the electromagnetic field energy that passes through the closed surface S and enters the volume per unit time, the first half of the right side of the equation is the increase in electric field energy and magnetic field energy in the closed space V per unit time, and the second half of the right side of the equation is the work done by the electric field on the current in the closed space V.

[0080] It should be noted that the sum of the density of the electric field energy and the density of the magnetic field energy remains constant, as shown in the following expression:

[0081]

[0082] In the formula, ε is the conductivity, μ is the magnetic permeability, E is the electric field, H is the magnetic field, and w e is the electric field energy density, w m is the magnetic field energy density, w is constant.

[0083] S133: Calculate the electromagnetic power loss based on the dielectric constant and conductivity before the temperature change.

[0084] In the embodiment of the present application, the electromagnetic power loss includes: the heat loss power density caused by the conduction current, and the heat loss power density caused by the conduction current is calculated based on the dielectric constant and conductivity before the temperature change, using the following expression:

[0085]

[0086] Where σ is the dielectric constant and E is the electric field.

[0087] Considering that the electromagnetic power loss that causes heat generation is composed of conductor loss and dielectric loss in the medium, in order to further improve the simulation accuracy, it is necessary to more accurately evaluate the loss of different material types as thermal loads.

[0088] In some embodiments, S133 may also include S1331 to S1332.

[0089] S1331: Determine the material type of the power amplifier product, where the material type includes magnetic material and non-magnetic material.

[0090] In this embodiment, on the one hand, for magnetic materials, the time average power consumed by conductor loss, dielectric loss and magnetic loss in the closed space volume V can be calculated. On the other hand, for non-magnetic materials, the magnetic loss can be ignored and the overall power loss density can be calculated.

[0091] S1332: Calculate the electromagnetic power loss based on the dielectric constant and conductivity before the temperature change using a calculation method corresponding to the material type.

[0092] In this embodiment, when the power amplifier product involves magnetic materials, the electromagnetic power loss is calculated based on the dielectric constant and conductivity before the temperature change, including:

[0093] The electromagnetic power loss is calculated based on the dielectric constant and conductivity before the temperature change, and the overall power loss density is calculated using the first calculation formula, where the first calculation formula is:

[0094]

[0095] Where ω is the angular frequency, ε is the conductivity, σ is the dielectric constant, E is the electric field, V is the volume of the closed space, μ is the magnetic permeability, and H is the magnetic field.

[0096] In the case of power amplifier products that do not involve magnetic materials, the electromagnetic power loss is calculated based on the dielectric constant and conductivity before temperature change, and also includes:

[0097] The electromagnetic power loss is calculated based on the dielectric constant and conductivity before the temperature change, and the overall power loss density is calculated using the second calculation formula, where the second calculation formula is:

[0098]

[0099] Where ω is the angular frequency, ε is the conductivity, σ is the dielectric constant, E is the electric field, and V is the volume of the closed space.

[0100] In this embodiment, the simulation accuracy is improved by processing the magnetic material and the non-magnetic material using different calculation methods.

[0101] In order to characterize the dielectric parameters and conduction properties of the material according to the temperature variation, the simulation accuracy can be further improved.

[0102] In some embodiments, S150 includes S151 to S154.

[0103] S151: Calculating the dielectric constant and conductivity after the temperature change based on the temperature data and the temperature change data in the temperature field distribution data.

[0104] In the embodiment of the present application, the temperature field distribution data obtained in S140 can be used to calculate the relationship between the dielectric constant and the conductivity of the material and the temperature change.

[0105] Among them, the dielectric constant and conductivity after temperature change can be calculated using the following expressions:

[0106] ε r (T) = ε r0 [1+α1(T-T0)];

[0107]

[0108] Where T0 is the initial temperature (K); α1 and α2 represent the temperature variation coefficient (ppm / K); r0 and Indicates the initial value when the temperature is T0.

[0109] It should be noted that electromagnetic power loss is used as a thermal load for solving the temperature field. The temperature data and temperature change data in the above calculation formula can be obtained through electromagnetic power loss as input.

[0110] S152: When the dielectric constant and the conductivity meet the threshold value, the target temperature field distribution data is output.

[0111] In this embodiment, when the data of dielectric constant and conductivity are relatively stable, the target temperature field distribution data is output.

[0112] S153: Generate a temperature field distribution diagram according to the target temperature field distribution data, and the corresponding extreme points reached by each material during the operation of the power amplifier product.

[0113] In this embodiment, the stable temperature field distribution data is rendered as a distribution cloud map, which can mark the corresponding temperature extreme points in the interactive interface.

[0114] S154: Evaluate the operational risk of the amplifier product based on comparison of extreme points with material parameters and / or operating conditions.

[0115] In this embodiment, the extreme points and the operating conditions and material parameters corresponding to the simulation can be judged separately or in combination. For example, in some operating conditions, the predetermined extreme points need to be met, but it is not the maximum heating temperature of the material. On the one hand, the extreme points can be compared with the material parameters to evaluate the damage risk by comparing the extreme points with the material parameters. On the other hand, the extreme points can be compared with the operating conditions to evaluate whether the power amplifier product is operating under limited conditions to evaluate the risk of failure. On the other hand, other operating risks can be comprehensively evaluated by combining the extreme points and material parameters with the operating conditions.

[0116] Taking into account the differences in working conditions and material parameters, in order to further simulate the different situations that need to be met in the actual use of analog power amplifier equipment.

[0117] In some embodiments, S154 also includes S1541 to 1542.

[0118] S1541: When the temperature corresponding to the extreme point is greater than the material parameter, it is determined that the power amplifier product has a risk of high temperature burnout;

[0119] In this embodiment, after marking, it can be obtained that in the case of power loss and material properties that change with temperature, in the corresponding running simulation, the extreme point values ​​can be compared with the solder melting point and the material tolerance temperature value to evaluate whether there is a risk of high-temperature burnout in structures such as bridges, gold wires, microstrip lines, circuits, insulators, etc. in solid-state power amplifier products.

[0120] 1542: When the extreme value point does not meet the operating conditions, it is determined that the power amplifier product has an operating fault.

[0121] In this embodiment, considering the setting of various working conditions, simulation can be completed through extreme value points to complete the fault judgment of the product.

[0122] In this application, based on Poynting's theorem, the power balance equation and the dielectric and conduction properties of the material are deeply integrated, and the coupling relationship between the electromagnetic field and the thermal field is established through the loss power and the material properties that change with temperature. A solid-state power amplifier heat loss calculation method based on electrothermal coupling is realized. It supports the analysis of the coupling relationship between the electromagnetic field and the thermal field in the case of a large mismatch, accurately calculates the additional heat caused by the large standing waves in the microwave link structure at the output end of the power amplifier chip, and realizes the evaluation of the overall temperature field distribution of the amplifier, so as to more accurately warn of the risk of high-temperature burnout of solid-state power amplifier products and improve the reliability of solid-state power amplifier products as a whole.

[0123] The exemplary application process of this application is as follows:

[0124] See also Figure 2 , Figure 2This is an implementation flow of an exemplary solid-state power amplifier heat loss calculation method based on electrothermal coupling proposed in an embodiment of the present application.

[0125] The implementation process of the solid-state power amplifier heat loss calculation method based on electrothermal coupling includes S1-S8.

[0126] Step S1, using commercial software HFSS to create an electromagnetic simulation structure model of the solid-state amplifier, including a heat source model of the power amplifier chip, and microwave structures at the output end of the power amplifier chip, such as gold wires, microstrip lines, insulators, etc., and the structure model can be exported and imported into ICEPAK to build a thermal simulation structure model.

[0127] Among them, taking a typical RF solid-state power amplifier product as an example, a solid-state power amplifier model is created by instantiating the product template, and the analysis process of the entire process of geometric structure modeling, material parameter setting, working condition setting, and electromagnetic field and temperature field simulation iterative solution is completed in sequence in the wizard simulation software. Finally, the electromagnetic field intensity distribution and temperature field intensity distribution are rendered on the result analysis interface. According to the temperature extreme points in the results, it can at least be judged whether the model has the risk of high-temperature burnout.

[0128] In order to ensure the accuracy and completeness of the simulation, the overall geometric structure model of the solid-state power amplifier is established. Figure 3 An exemplary solid-state power amplifier geometric structure model with an integrated thermoelectric coupling iterative simulation software interface in an electromagnetic thermal simulation model is shown. The power amplifier product has two identical power amplifier chips working simultaneously, so the two power amplifier chips with large heat generation are set as heat sources according to their saturated output powers; the hidden cavity model only displays the microwave structure at the output end of the power amplifier chip, such as Figure 4 The geometric structure model of the microwave link at the output end of the microwave solid-state power amplifier chip in an electromagnetic thermal simulation model shown in the figure, the outer box is the electromagnetic loss heat range, which includes the bridge, gold wire, microstrip line, circuit, insulator, etc.

[0129] Step S2, material parameter setting, includes setting material electromagnetic property parameters in HFSS and setting heat transfer property parameters in ICEPAK.

[0130] Among them, the microwave structure at the output end of the power amplifier chip is as follows: Figure 4 As shown, the strip line material of the top layer of the bridge model is copper, the upper board model on the left is an aluminum nitride substrate, the lower board model on the left is the solder layer between the substrate and the carrier and between the carrier and the cavity, and the cavity material of the power amplifier unit is aluminum. The above structures are assigned values ​​according to the corresponding material property values.

[0131] Step S3, working condition setting, includes setting of various working conditions, including load impedance adaptation working condition, load impedance mismatch ratio 5:1 working condition, load impedance mismatch ratio 10:1 working condition, etc.

[0132] The output power of the solid-state amplifier chip is set to 20W; the solid-state amplifier product is installed on a constant temperature bottom plate, that is, the bottom of the cavity contacts a 1mm thick copper as a constant temperature surface. The output standing wave of the solid-state amplifier output is 10:1, and the reflection 80% energy equivalent calculation is adopted, and the full phase sweep is performed.

[0133] Step S4, electromagnetic field solution analysis, by calling HFSS simulation solution in the background, the electromagnetic field intensity distribution is obtained, and the power balance equation is established according to Poynting theorem to calculate the power loss density in the enclosing volume.

[0134] The integrated software drives the HFSS backend through scripts to perform electromagnetic field simulation on the above model, extracts the electromagnetic field intensity distribution data and renders an intuitive field intensity distribution cloud map, such as Figure 5 The electric field distribution of a solid-state power amplifier under a mismatch condition of 10:1 in an electromagnetic thermal simulation model shown.

[0135] Step S5, temperature field solution and analysis, by calling ICEPAK simulation solution in the background to obtain the temperature field distribution.

[0136] Among them, after extracting the field strength data of the electromagnetic field, the integrated software calculates the power loss in the enclosing volume according to the power balance equation of Poynting theorem, which is used as the heat load for temperature field solution. The integrated software drives ICEPAK to solve the temperature field through the script. After the solution is completed, the temperature field distribution data is extracted and the temperature field distribution cloud map is rendered as shown in the figure. Figure 6 The temperature field distribution of a solid-state power amplifier under a mismatch condition of 10:1 in an electromagnetic thermal simulation model shown.

[0137] Step S6, calculating the dielectric constant and the conductivity, and judging whether they are less than the limit value according to the error extreme value.

[0138] Step S7, update the dielectric constant and conductivity. If the dielectric constant and conductivity are greater than the threshold value (generally set to 5%), use the dielectric constant and conductivity calculated in S6 to update the material parameters, and re-drive HFSS to perform electromagnetic field solution analysis; utilize the change in power loss and the characteristics of material change with temperature to achieve the coupling of thermoelectric fields through iterative calculation of electromagnetic fields and thermal fields.

[0139] Step S8, after multiple iterations, if the dielectric constant and conductivity are less than the threshold value, extract the temperature field data in ICEPAK, render the temperature field and mark the temperature extremes, and determine whether the power amplifier is at risk of high temperature burnout based on boundary values ​​such as the melting point of the material as a reference.

[0140] After extracting the field intensity data of the temperature field, the integrated software updates the dielectric constant and conductivity according to the calculation formula in step S6, and drives HFSS and ICEPAK to cycle through steps S4, S5, S6, and S7 until the dielectric constant and conductivity change is less than 5%. The stable temperature field distribution data is extracted and rendered as a distribution cloud map, and the temperature extreme points are marked in the interactive interface. Figure 6 As shown, by comparing the extreme value with the melting point of solder and the temperature tolerance value of the material, it is evaluated whether there is a risk of high-temperature burning of structures such as bridges, gold wires, microstrip lines, circuits, insulators, etc. in solid-state power amplifier products, thereby improving the overall reliability of solid-state power amplifier products.

[0141] See also Figure 7 , Figure 7 A structural block diagram of a solid-state power amplifier heat loss calculation based on electrothermal coupling provided in the present application, the solid-state power amplifier heat loss calculation device 300 based on electrothermal coupling includes: a modeling module 310, an acquisition module 320, a calculation module 330, a determination module 340 and an evaluation module 350, wherein:

[0142] The modeling module 310 is used to establish an electromagnetic thermal simulation model of the power amplifier product.

[0143] The acquisition module 320 is used to analyze the electromagnetic thermal simulation model to obtain electromagnetic field intensity distribution data.

[0144] The calculation module 330 is used to calculate the electromagnetic power loss using the Poynting theorem according to the electromagnetic field intensity distribution data.

[0145] The determination module 340 is used to determine the temperature field distribution data of the power amplifier product based on the electromagnetic power loss.

[0146] The evaluation module 350 is used to calculate the dielectric constant and conductivity after the temperature change according to the temperature field distribution data, and output the target temperature field distribution data when the dielectric constant and conductivity meet the threshold value to evaluate the power amplifier product.

[0147] The device embodiment in the present application may also include other modules, which specifically correspond to part of the content of the above method.

[0148] It should be noted that the device embodiments in the present application correspond to each other with the aforementioned method embodiments. The specific principles in the device embodiments can be found in the contents of the aforementioned method embodiments and will not be repeated here.

[0149] In several embodiments provided in this embodiment, the coupling between modules may be electrical, mechanical or other forms of coupling.

[0150] In addition, each functional module in each embodiment of the present invention may be integrated into one processing module, or each module may exist physically separately, or two or more modules may be integrated into one module. The above-mentioned integrated module may be implemented in the form of hardware or in the form of software functional modules.

[0151] See also Figure 8 , Figure 8 The present application provides a structural block diagram of an electronic device 200 that can execute the above-mentioned solid-state power amplifier heat loss calculation method based on electrothermal coupling. The electronic device 200 can be a smart phone, a tablet computer, a computer, a portable computer or other devices.

[0152] The electronic device 200 further includes a processor 202 and a memory 204. The memory 204 stores a program that can execute the contents of the aforementioned embodiments, and the processor 202 can execute the program stored in the memory 204.

[0153] Among them, the processor 202 may include one or more cores and message matrix units for processing data. The processor 202 uses various interfaces and lines to connect various parts of the entire electronic device 200, and executes various functions and processes data of the electronic device 200 by running or executing instructions, programs, code sets or instruction sets stored in the memory 204, and calling data stored in the memory 204. Optionally, the processor 202 can be implemented in at least one hardware form of digital signal processing (Digital Signal Processing, DSP), field programmable gate array (Field-Programmable Gate Array, FPGA), and programmable logic array (Programmable Logic Array, PLA). The processor 202 can integrate one or a combination of a central processing unit (Central Processing Unit, CPU), a graphics processing unit (Graphics Processing Unit, GPU) and a modulation decoder. Among them, the CPU mainly processes the operating system, user interface and application programs; the GPU is responsible for rendering and drawing display content; and the modem is used to process wireless communications. It can be understood that the above-mentioned modulation decoder may not be integrated into the processor, but may be implemented separately through a communication chip.

[0154] The memory 204 may include a random access memory (RAM) or a read-only memory (ROM). The memory 204 may be used to store instructions, programs, codes, code sets or instruction sets. The memory 204 may include a program storage area and a data storage area, wherein the program storage area may store instructions for implementing an operating system, instructions for implementing at least one function (e.g., instructions for a user to obtain a random number), instructions for implementing the following various method embodiments, etc. The data storage area may also store data (e.g., random numbers) created by the terminal during use, etc.

[0155] The electronic device 200 may also include a network module and a screen. The network module is used to receive and send electromagnetic waves, realize the mutual conversion between electromagnetic waves and electrical signals, and thus communicate with a communication network or other devices, such as communicating with an audio playback device. The network module may include various existing circuit components for performing these functions, such as antennas, radio frequency transceivers, digital signal processors, encryption / decryption chips, user identity modules (SIM) cards, memories, etc. The network module may communicate with various networks such as the Internet, corporate intranets, wireless networks, or communicate with other devices via wireless networks. The above-mentioned wireless networks may include cellular telephone networks, wireless local area networks, or metropolitan area networks. The screen may display interface content and perform data interaction.

[0156] Please refer to Fig. 9 , Fig. 9 The computer-readable storage medium 400 stores program code 410, which can be called by a processor to execute the method described in the above method embodiment.

[0157] The computer-readable storage medium 400 may be an electronic memory such as a flash memory, an EEPROM (electrically erasable programmable read-only memory), an EPROM, a hard disk, or a ROM. Optionally, the computer-readable storage medium includes a non-transitory computer-readable storage medium. The computer-readable storage medium 400 has storage space for program codes 410 that perform any method steps in the above method. These program codes 410 can be read from or written to one or more computer program products. The program codes 410 can be compressed, for example, in an appropriate form.

[0158] The embodiment of the present application also provides a computer program product or a computer program, which includes a computer instruction stored in a computer-readable storage medium. The processor of the computer device reads the computer instruction from the computer-readable storage medium, and the processor executes the computer instruction, so that the computer device executes the solid-state power amplifier heat loss calculation method based on electrothermal coupling described in the above various optional implementations.

[0159] The above embodiments are only used to illustrate the technical solutions of the present application, rather than to limit it. Although the present application has been described in detail with reference to the aforementioned embodiments, a person skilled in the art should understand that the technical solutions described in the aforementioned embodiments can still be modified, or some of the technical features can be replaced by equivalents. However, these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of the present application.

Claims

1. A method for calculating heat loss of solid-state power amplifier based on electrothermal coupling, characterized in that: The method comprises: Establish electromagnetic heat simulation model for power amplifier products; Analyzing the electromagnetic thermal simulation model to obtain electromagnetic field intensity distribution data; Calculate electromagnetic power loss using Poynting theorem according to the electromagnetic field intensity distribution data; Determining temperature field distribution data of the power amplifier product based on the electromagnetic power loss; The dielectric constant and the conductivity after the temperature change are calculated according to the temperature field distribution data, and when the dielectric constant and the conductivity meet a threshold value, the target temperature field distribution data is output to evaluate the power amplifier product.

2. The method for calculating heat loss of solid-state power amplifier based on electrothermal coupling according to claim 1, characterized in that: The calculating the electromagnetic power loss by using the Poynting theorem according to the electromagnetic field intensity distribution data comprises: Determine, based on the electromagnetic field intensity distribution data, the increase in electromagnetic field energy, electric field energy, and magnetic field energy of the closed space volume corresponding to the power amplifier product and the work done by the electric field on the closed space; Based on Poynting's theorem, a calculation formula is established in which the electromagnetic field energy is equivalent to the sum of the increase in the electric field energy and the magnetic field energy and the work done by the electric field on the closed space, so as to obtain the dielectric constant and the conductivity before the temperature changes; Calculate the electromagnetic power loss based on the dielectric constant and conductivity before temperature change.

3. The method for calculating heat loss of solid-state power amplifier based on electrothermal coupling according to claim 2, characterized in that: The method of calculating electromagnetic power loss based on the dielectric constant and the conductivity before the temperature change includes: Determining the material type of the power amplifier product, wherein the material type includes magnetic material and non-magnetic material; The electromagnetic power loss is calculated based on the dielectric constant and the conductivity before the temperature change using a calculation method corresponding to the material type.

4. The method for calculating heat loss of solid-state power amplifier based on electrothermal coupling according to claim 1, characterized in that: The solid-state power amplifier heat loss calculation method based on electrothermal coupling also includes: Set the material parameters and operating conditions of the power amplifier product.

5. The method for calculating heat loss of solid-state power amplifier based on electrothermal coupling according to claim 4, characterized in that: The step of calculating the dielectric constant and the conductivity after the temperature change according to the temperature field distribution data, until the dielectric constant and the conductivity meet a threshold, outputting the target temperature field distribution data to evaluate the power amplifier product, includes: Calculate the dielectric constant and conductivity after the temperature change based on the temperature data and the temperature change data in the temperature field distribution data; When the dielectric constant and the conductivity meet the threshold value, output the target temperature field distribution data; Generate a temperature field distribution diagram according to the target temperature field distribution data, and the corresponding extreme points reached by each material during the operation of the power amplifier product; The extreme point is compared with the material parameters and / or operating conditions to evaluate the operating risk of the power amplifier product.

6. The method for calculating heat loss of solid-state power amplifier based on electrothermal coupling according to claim 5, characterized in that: The step of comparing the extreme point with the material parameter and / or the operating condition to evaluate the operating risk of the power amplifier product includes: When the temperature corresponding to the extreme point is greater than the material parameter, it is determined that the power amplifier product has a risk of high temperature burning; When the extreme value point does not meet the operating condition, it is determined that the power amplifier product has an operating fault.

7. The method for calculating heat loss of solid-state power amplifier based on electrothermal coupling according to claim 1, characterized in that: The solid-state power amplifier heat loss calculation method based on electrothermal coupling also includes: Determining whether the dielectric constant and the conductivity meet a threshold value; When the dielectric constant and the conductivity do not meet the threshold value, the step is returned to calculate the electromagnetic power loss using the Poynting theorem according to the electromagnetic field intensity distribution data.

8. A solid-state power amplifier heat loss calculation device based on electrothermal coupling, characterized in that: The device comprises: Modeling module, used to establish electromagnetic thermal simulation model of power amplifier products; An acquisition module, used for analyzing the electromagnetic thermal simulation model to obtain electromagnetic field intensity distribution data; A calculation module, used for calculating electromagnetic power loss by using Poynting theorem according to the electromagnetic field intensity distribution data; A determination module, configured to determine temperature field distribution data of the power amplifier product based on the electromagnetic power loss; The evaluation module is used to calculate the dielectric constant and conductivity after temperature change according to the temperature field distribution data, and output the target temperature field distribution data when the dielectric constant and conductivity meet the threshold value to evaluate the power amplifier product.

9. An electronic device, characterized in that: The electronic device includes a memory and a processor, wherein the memory stores program codes that can be run on the processor, and when the program codes are executed by the processor, the solid-state power amplifier heat loss calculation method based on electrothermal coupling as described in any one of claims 1 to 7 is implemented.

10. A computer-readable storage medium, characterized in that: The computer-readable storage medium stores program codes, and the program codes can be called by one or more processors to execute the solid-state power amplifier heat loss calculation method based on electrothermal coupling as described in any one of claims 1 to 7.

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