Silicon carbide MOSFET on-resistance optimization method and device

Abstract

The invention relates to the technical field of MISFET on-resistance, and discloses a silicon carbide MOSFET on-resistance optimization method and device, and the method comprises the steps: continuously collecting the working environment and circuit performance data of a target MOSFET, generating working data, analyzing the performance safety of the MOSFET according to the working data, obtaining a performance safety feature, and carrying out the optimization of the on-resistance of a silicon carbide MOSFET on the basis of the performance safety feature. According to the method, the grid voltage adjustment characteristic and the cooling system adjustment characteristic which conform to the safety characteristic are analyzed and determined, the grid voltage and the cooling system of the target MOSFET are adjusted according to the adjustment characteristics, and on-resistance optimization is achieved. By optimizing the grid voltage and the cooling system, the on-resistance of the MOSFET is effectively reduced, in the optimization process, the electrical and thermal stability of the MOSFET is kept, and the on-resistance performance of the MOSFET is improved. The MOSFET is ensured to be in an optimal on-resistance optimization and loss control state by balancing grid voltage amplification and cooling system control, and the problem that in the prior art, when on-resistance optimization is carried out on the MOSFET, the balance degree of grid voltage and cooling control is insufficient to grasp is solved.

Description

Technical Field

[0001] The present invention relates to the technical field of MISFET on-resistance, and in particular to a method and device for optimizing the on-resistance of a silicon carbide MOSFET. Background Art

[0002] Silicon carbide MOSFET is widely used in power electronics and high-efficiency electrical systems due to its excellent high temperature, high frequency and high efficiency characteristics. The on-resistance of MOSFET directly affects the performance indicators of the equipment such as power loss, efficiency and thermal management. Therefore, optimizing the on-resistance of MOSFET is an important issue in the application of MOSFET.

[0003] In the prior art, the optimization of the on-resistance of MOSFET mainly includes the optimization of the design structure and the optimization of the working environment. In the optimization of the working environment, increasing the gate voltage of MOSFET and reducing the working environment temperature of MOSFET can optimize the on-resistance of MOSFET. However, increasing the gate voltage of MOSFET will cause its own working temperature to rise to a certain extent, thereby reversely reducing the on-resistance optimization effect brought by increasing the gate voltage, and will also cause loss to the equipment life of MOSFET. Increasing the cooling performance of the cooling control system will bring greater cooling energy consumption. In the current technology, it is difficult to achieve balanced optimization of MOSFET on-resistance in all aspects. Summary of the invention

[0004] The purpose of the present invention is to provide a method and device for optimizing the on-resistance of a silicon carbide MOSFET, aiming to solve the problem of insufficient balance between gate voltage and temperature reduction control when optimizing the on-resistance of MOSFET in the prior art.

[0005] The present invention is implemented in this way. In a first aspect, the present invention provides a method for optimizing the on-resistance of a silicon carbide MOSFET, comprising: Continuously collecting parameters of the working environment and circuit performance of the target MOSFET to obtain working data of the target MOSFET, and performing performance safety analysis on the target MOSFET according to the working data to obtain performance safety characteristics of the target MOSFET; Performing gate voltage and cooling system adjustment analysis on the target MOSFET according to the performance safety feature to obtain gate voltage adjustment features and cooling system adjustment features that meet the performance safety feature; The gate voltage and the cooling system of the target MOSFET are adjusted according to the gate voltage adjustment characteristics and the cooling system adjustment characteristics, so as to optimize the on-resistance of the target MOSFET.

[0006] In a second aspect, the present invention provides a method and device for optimizing on-resistance of a silicon carbide MOSFET, which is used to implement a method for optimizing on-resistance of a silicon carbide MOSFET as described in any one of the first aspects.

[0007] The present invention provides a method for optimizing the on-resistance of a silicon carbide MOSFET, which has the following beneficial effects: The present invention continuously collects the working environment and circuit performance data of the target MOSFET to generate working data, analyzes the performance safety of the MOSFET according to the working data, obtains the performance safety characteristics, analyzes and determines the gate voltage adjustment characteristics and the cooling system adjustment characteristics that meet the safety characteristics based on the performance safety characteristics, and adjusts the gate voltage and the cooling system of the target MOSFET according to the adjustment characteristics to achieve on-resistance optimization. The present invention effectively reduces the on-resistance of the MOSFET and improves the circuit efficiency by optimizing the gate voltage and the cooling system. During the optimization process, the electrical and thermal stability of the MOSFET is maintained. By balancing the gate voltage increase and the cooling system control, the MOSFET is ensured to be in the optimal on-resistance optimization and loss control state, thereby solving the problem of insufficient balance between the gate voltage and the cooling control when optimizing the on-resistance of the MOSFET in the prior art. BRIEF DESCRIPTION OF THE DRAWINGS

[0008] Figure 1 It is a schematic diagram of the steps of a method for optimizing the on-resistance of a silicon carbide MOSFET provided in an embodiment of the present invention. DETAILED DESCRIPTION

[0009] In order to make the purpose, technical solution and advantages of the present invention more clearly understood, the present invention is further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention and are not intended to limit the present invention.

[0010] The implementation of the present invention is described in detail below in conjunction with specific embodiments.

[0011] Reference Figure 1 As shown, a preferred embodiment of the present invention is provided.

[0012] In a first aspect, the present invention provides a method for optimizing on-resistance of a silicon carbide MOSFET, comprising: S1: continuously collecting parameters of the working environment and circuit performance of the target MOSFET to obtain working data of the target MOSFET, and performing performance safety analysis on the target MOSFET according to the working data to obtain performance safety characteristics of the target MOSFET; S2: performing gate voltage and cooling system adjustment analysis on the target MOSFET according to the performance safety feature, and obtaining gate voltage adjustment features and cooling system adjustment features that meet the performance safety feature; S3: adjusting the gate voltage and the cooling system of the target MOSFET according to the gate voltage adjustment characteristics and the cooling system adjustment characteristics, so as to optimize the on-resistance of the target MOSFET.

[0013] Specifically, in step S1 of the embodiment provided by the present invention, sensors and data acquisition devices (such as current sensors, voltage sensors, temperature sensors, etc.) are installed in the circuit to ensure that all sensors and data acquisition devices are calibrated and can accurately reflect the actual working conditions, continuously monitor and record the operating parameters of the MOSFET, such as drain current, drain voltage, gate voltage, junction temperature, etc., and regularly or continuously store the collected data to ensure the integrity and continuity of the data.

[0014] More specifically, we analyze the data collected over a long period of time, identify the trends and patterns of parameter changes, evaluate the thermal performance of MOSFET under different working conditions, identify overheating risks, evaluate the impact of current and voltage stress on MOSFET performance, identify overcurrent and overvoltage risks, and predict possible failure points and times based on historical data and trend analysis. Based on the analysis results, we determine the safe operating area of ​​MOSFET, including the safe range of temperature, current, and voltage. We extract key characteristic parameters that reflect the performance safety of MOSFET, such as the maximum allowable junction temperature, maximum current density, etc. All analysis results are comprehensively evaluated to form a feature set that describes the performance safety of MOSFET. We verify the accuracy and reliability of the performance safety features through experiments to ensure their effectiveness in actual working conditions.

[0015] It is understandable that through continuous monitoring and analysis, potential failures of MOSFET can be discovered and prevented in time, improving the reliability of the system. The performance safety characteristics obtained through analysis can guide circuit design and MOSFET selection, optimize the overall circuit performance, and reduce power loss and improve system energy efficiency by optimizing operating parameters and conditions.

[0016] Specifically, in step S2 of the embodiment provided by the present invention, the performance safety characteristics of the MOSFET are obtained from the previous analysis, including the maximum allowable junction temperature, the optimal operating voltage range, etc., the current gate voltage setting and the working status of the cooling system are evaluated, and the benchmark data is recorded.

[0017] More specifically, according to the performance safety characteristics, a safe gate voltage range is set, the gate voltage is adjusted at different step values ​​within the set range, the performance parameters of the MOSFET (such as drain current, power consumption, temperature, etc.) are tested at each voltage, the performance data of each voltage point is recorded, the impact of different voltages on the performance of the MOSFET is analyzed, the optimal gate voltage is found, and a gate voltage adjustment strategy is formulated to ensure that the gate voltage is in the best state under different working conditions.

[0018] More specifically, analyze the cooling efficiency of the current cooling system and the thermal response of MOSFET, test the junction temperature changes of MOSFET under different cooling intensities, record the cooling effect, and optimize the parameters of the cooling system (such as fan speed, coolant flow, etc.) based on the test results to ensure that the MOSFET can be maintained within a safe temperature range even under high load. Develop an intelligent cooling system control strategy based on real-time temperature monitoring to dynamically adjust the cooling intensity to adapt to load changes.

[0019] More specifically, after adjusting the gate voltage and cooling system, a joint test at the system level is carried out to verify the synergistic effect of the two. Through a series of tests, it is verified whether the adjusted system meets the performance safety feature requirements to ensure the stability and safety of MOSFET under different working conditions. Based on the test feedback, the gate voltage and cooling system parameters are further fine-tuned to achieve the optimal state.

[0020] It is understandable that by precisely adjusting the gate voltage, the switching efficiency of the MOSFET can be maximized and the power consumption can be reduced, thereby improving the overall circuit performance. The optimized cooling system can more effectively control the temperature, prevent overheating, ensure the stability of the MOSFET under efficient working conditions, keep the gate voltage within the optimal range, and avoid device losses and failures caused by voltage fluctuations.

[0021] It should be noted that both the increase in gate voltage and the decrease in operating environment temperature can optimize the on-resistance of MOSFET, while the increase in gate voltage will cause the operating environment temperature of MOSFET to rise, which in turn causes the on-resistance to deteriorate. Therefore, it is necessary to find the most balanced node, increase the gate voltage and control the cooling system on the MOSFET, so as to achieve the optimization of MOSFET on-resistance and control the energy consumption of the cooling system.

[0022] Specifically, in step S3 of the embodiment provided by the present invention, the performance safety characteristics of the target MOSFET are clarified, including the maximum junction temperature, the optimal operating voltage range, the on-resistance, etc., the current gate voltage and the initial settings of the cooling system are recorded, the initial on-resistance value is measured and recorded, and the gate voltage adjustment range is set according to the performance characteristics. The gate voltage is adjusted in steps within the set range, the on-resistance value of each voltage point is recorded, the on-resistance change under different gate voltages is analyzed, the gate voltage point that minimizes the on-resistance is identified, the optimal gate voltage is determined and fine-tuned to ensure that it remains stable under the actual working environment.

[0023] More specifically, the cooling effect of the current cooling system is tested, the operating temperature of the MOSFET is recorded, and the MOSFET temperature and on-resistance under different cooling intensities are tested by adjusting parameters such as the cooling fan speed and coolant flow rate. The relationship between the cooling effect and the on-resistance is analyzed, the optimal cooling intensity is determined, the on-resistance is minimized, and a dynamic cooling control strategy based on real-time temperature monitoring is designed and implemented to ensure the best cooling effect under different load conditions.

[0024] More specifically, after the optimal gate voltage and cooling system are adjusted, joint testing is carried out to ensure that the synergy between the two achieves the best effect. Through a series of tests, the on-resistance, temperature and stability of the adjusted system under actual working conditions are verified. According to the test results and actual usage, the gate voltage and cooling system are further fine-tuned to ensure the stability and reliability of the optimization effect.

[0025] It can be understood that by precisely adjusting the gate voltage, the on-resistance of the MOSFET is minimized, thereby improving the current transmission efficiency. Through effective cooling measures, the operating temperature of the MOSFET is controlled within the optimal range, further reducing the on-resistance. The optimized on-resistance reduces power consumption and improves the energy efficiency of the overall system. The reduction in on-resistance improves the switching performance of the MOSFET and significantly improves the overall system performance. Adjustments based on actual data are more accurate than traditional experience adjustments, ensuring the stability and sustainability of the optimization effect.

[0026] The present invention provides a method for optimizing the on-resistance of a silicon carbide MOSFET, which has the following beneficial effects: The present invention continuously collects the working environment and circuit performance data of the target MOSFET to generate working data, analyzes the performance safety of the MOSFET according to the working data, obtains the performance safety characteristics, analyzes and determines the gate voltage adjustment characteristics and the cooling system adjustment characteristics that meet the safety characteristics based on the performance safety characteristics, and adjusts the gate voltage and the cooling system of the target MOSFET according to the adjustment characteristics to achieve on-resistance optimization. The present invention effectively reduces the on-resistance of the MOSFET and improves the circuit efficiency by optimizing the gate voltage and the cooling system. During the optimization process, the electrical and thermal stability of the MOSFET is maintained. By balancing the gate voltage increase and the cooling system control, the MOSFET is ensured to be in the optimal on-resistance optimization and loss control state, thereby solving the problem of insufficient balance between the gate voltage and the cooling control when optimizing the on-resistance of the MOSFET in the prior art.

[0027] Preferably, the parameters of the working environment and circuit performance of the target MOSFET are continuously collected to obtain the working data of the target MOSFET, and the performance safety of the target MOSFET is analyzed and processed according to the working data. The step of obtaining the performance safety characteristics of the target MOSFET includes: S11: continuously collecting parameters of the working environment of the target MOSFET to obtain working environment data of the target MOSFET; wherein the working environment data includes ambient temperature data and cooling system data; S12: continuously collecting parameters of circuit performance of the target MOSFET to obtain circuit performance data of the target MOSFET; wherein the circuit performance data includes voltage data and current data; S13: performing a temperature safety analysis on the target MOSFET according to the working environment data to obtain a temperature safety feature of the target MOSFET; S14: performing a safety analysis on the target MOSFET in terms of circuit parameters according to the circuit performance data to obtain a circuit safety feature of the target MOSFET; S15: Combining the temperature safety feature with the circuit safety feature to obtain a performance safety feature of the target MOSFET.

[0028] Specifically, a temperature sensor is used to collect temperature data of the environment where the target MOSFET is located in real time, and to record the working status and parameters of the cooling system, such as the cooling fan speed, coolant flow rate, etc.

[0029] More specifically, a voltage sensor is used to monitor and record the input and output voltages of the target MOSFET, a current sensor is used to monitor and record the input and output currents of the target MOSFET, the ambient temperature data and the cooling system data are integrated, and the operating temperature of the target MOSFET under different ambient temperatures and cooling conditions is analyzed.

[0030] More specifically, by analyzing temperature data, the operating temperature range of the target MOSFET and its impact on performance are determined. Based on the temperature characteristics of the target MOSFET, its safety at different temperatures is evaluated and risk points that may cause overheating are identified.

[0031] More specifically, the voltage data and current data are integrated to analyze the working performance of the target MOSFET under different voltage and current conditions. By analyzing the voltage and current data, the circuit parameter range of the target MOSFET and its impact on the performance are determined. Based on the circuit characteristics of the target MOSFET, its safety under different voltage and current conditions is evaluated, and risk points that may cause overvoltage or overcurrent are identified.

[0032] More specifically, the temperature safety characteristics and circuit safety characteristics are comprehensively analyzed to evaluate their interactive impact. Through comprehensive analysis, the performance safety characteristics of the target MOSFET are extracted, including its stability and safety under different working conditions. Based on the comprehensive performance safety characteristics, potential risk points are identified, and optimization suggestions are put forward to improve the safety and reliability of the target MOSFET.

[0033] It can be understood that by analyzing multi-dimensional data such as ambient temperature, cooling system, voltage and current, the safety of the target MOSFET can be comprehensively evaluated, and the risk points that may cause the target MOSFET to fail can be accurately identified through data-driven analysis. Based on the safety analysis results, the operating conditions of the target MOSFET can be further optimized, such as adjusting the gate voltage or improving the cooling system to ensure that it operates in the best condition.

[0034] Preferably, the step of performing a temperature safety analysis on the target MOSFET according to the working environment data to obtain the temperature safety feature of the target MOSFET comprises: S131: Performing a time-series characteristic analysis on the ambient temperature data to obtain a temperature variation characteristic of the target MOSFET; S132: extracting representative data from the ambient temperature data to obtain a stable temperature characteristic of the target MOSFET; S133: performing a calculation process on the temperature control effect of the target MOSFET according to the cooling system data to obtain a theoretical cooling effect of the target MOSFET corresponding to the cooling system data; S134: performing a safety performance feedback analysis on the temperature variation characteristics and the stable temperature characteristics according to the theoretical cooling effect, to obtain a temperature safety characteristic of the target MOSFET.

[0035] Specifically, a temperature sensor is used to collect ambient temperature data in real time to form a time series data set. The ambient temperature data is smoothed to remove noise. The changing trend and periodic characteristics of the ambient temperature are extracted through time series analysis methods (such as moving average, difference method, etc.). The temperature changes of the target MOSFET in different time periods are analyzed, including the maximum temperature, minimum temperature and temperature fluctuation range.

[0036] More specifically, representative temperature points are extracted from the ambient temperature data, such as average temperature, peak temperature, valley temperature, etc. Cluster analysis methods (such as K-means) are used to classify the temperature data, identify different types of temperature states, and extract the temperature characteristics of the target MOSFET under stable working conditions, including common operating temperature ranges and temperature distribution under long-term operation.

[0037] More specifically, the working data of the cooling system (such as cooling fan speed, coolant flow, ambient wind speed, etc.) is collected and integrated, and a heat exchange model between MOSFET and the cooling system is established based on the theory of heat conduction and thermal radiation. Through numerical simulation and theoretical calculation, the theoretical cooling effect under different cooling system parameters is obtained.

[0038] More specifically, the actual temperature change characteristics and the stable temperature characteristics are analyzed without the cooling effect according to the theoretical cooling effect, so as to obtain the temperature change characteristics and the stable temperature characteristics of the target MOSFET without the cooling effect of the cooling system. The safety performance of the target MOSFET is analyzed according to the temperature change characteristics and the stable temperature characteristics of the target MOSFET without the cooling effect of the cooling system. The result of the analysis is the temperature safety characteristic, which is used to evaluate the safety risk of the target MOSFET under different ambient temperatures and cooling conditions. It can be understood that by real-time collection and analysis of ambient temperature data, accurate monitoring of the temperature changes of the target MOSFET can be achieved, and the temperature safety performance of the target MOSFET can be evaluated in multiple dimensions by comprehensive analysis of temperature change characteristics, stable temperature characteristics and cooling effects.

[0039] Preferably, the step of performing a safety analysis on the target MOSFET in terms of circuit parameters according to the circuit performance data to obtain the circuit safety characteristics of the target MOSFET comprises: S141: Performing stability analysis on the voltage data to obtain voltage stability characteristics of the target MOSFET; S142: Performing stability analysis on the current data to obtain current stability characteristics of the target MOSFET; S143: performing correlation analysis on the voltage data and the current data to obtain circuit correlation characteristics of the target MOSFET; S144: independently evaluate and perform weighted comprehensive analysis on the voltage stability characteristics, current stability characteristics, and circuit-related characteristics of the target MOSFET to obtain circuit safety characteristics of the target MOSFET.

[0040] Specifically, a high-precision voltage sensor is used to collect the voltage data of MOSFET in real time. The collected voltage data is preprocessed, including denoising, filtering and normalization. The stability of the voltage data is evaluated through statistical analysis (such as standard deviation, variance, mean) and timing analysis (such as autocorrelation function, spectrum analysis). Finally, the voltage fluctuation range, change trend and stability indicators (such as voltage ripple and transient response characteristics) are obtained.

[0041] More specifically, a high-precision current sensor is used to collect the current data of the MOSFET in real time. The collected current data is preprocessed, including denoising, filtering and normalization. The stability of the current data is evaluated through statistical analysis (such as standard deviation, variance, mean) and timing analysis (such as autocorrelation function, spectrum analysis). Finally, the current fluctuation range, change trend and stability indicators (such as current ripple, transient response characteristics) are obtained.

[0042] More specifically, the voltage and current data are collected synchronously to ensure time alignment. The relationship between voltage and current is analyzed using correlation coefficient analysis, regression analysis and other methods. The dynamic response characteristics of voltage and current are analyzed using tools such as Bode plots and Nyquist plots to obtain the mutual influence and correlation characteristics between voltage and current, including transfer function, gain and phase characteristics.

[0043] More specifically, the voltage stability characteristics, current stability characteristics and circuit-related characteristics are independently evaluated to obtain their respective stability scores. The weights of the voltage, current and related characteristics are determined based on the importance and operating characteristics of the MOSFET in a specific application. A weighted comprehensive analysis is performed on the evaluation results of each characteristic to calculate a comprehensive circuit safety characteristic score. Finally, the comprehensive circuit safety characteristics of the target MOSFET are obtained, including the stability and safety indicators of the voltage, current and overall circuit.

[0044] It can be understood that through high-precision sensors and data processing technology, the stability of voltage and current can be accurately evaluated, and through timing and spectrum analysis, the dynamic change characteristics of voltage and current can be understood in detail to ensure the comprehensiveness of stability analysis. Through correlation and dynamic response analysis, the correlation characteristics between voltage and current can be identified and their mutual influence mechanism can be revealed. Through independent evaluation and weighted comprehensive analysis, the stability and safety of voltage, current and circuit can be comprehensively evaluated.

[0045] Preferably, the step of performing gate voltage and cooling system adjustment analysis on the target MOSFET according to the performance safety feature to obtain gate voltage adjustment features and cooling system adjustment features that meet the performance safety feature includes: S21: performing gate voltage increase space analysis on voltage data of the target MOSFET at the current moment according to the circuit safety feature to obtain a gate voltage increase space of the target MOSFET; S22: analyzing a gate voltage amplification scheme for the target MOSFET according to the gate voltage amplification space to obtain several gate voltage amplification schemes for the target MOSFET; S23: performing temperature change estimation processing on various gate voltage amplification schemes to obtain expected temperature increase characteristics corresponding to various gate voltage amplification schemes; S24: performing safety prediction analysis on each of the expected temperature increase characteristics according to the temperature safety characteristics to obtain temperature safety prediction characteristics of various gate voltage amplification schemes; S25: performing a plan analysis on a temperature reduction process of the gate voltage amplification scheme according to the temperature safety prediction characteristics of the gate voltage amplification scheme, and obtaining several temperature reduction control plans corresponding to the gate voltage amplification scheme; S26: Combining the gate voltage amplification scheme and the corresponding various temperature reduction control schemes to obtain a plurality of adjustment schemes; S27: Perform value evaluation on each of the adjustment schemes to obtain the execution value of each of the adjustment schemes, and convert the gate voltage amplification scheme and the temperature reduction control plan in the adjustment scheme with the best execution value to obtain the gate voltage adjustment characteristics and the temperature reduction system adjustment characteristics that meet the performance safety characteristics.

[0046] Specifically, according to the circuit safety characteristics, the voltage data of the target MOSFET at the current moment is analyzed to determine the range in which its gate voltage can be increased, and the upper limit of the gate voltage at which the MOSFET can operate safely under existing conditions is determined to avoid circuit damage caused by exceeding the safety voltage.

[0047] More specifically, based on the gate voltage amplification space, a variety of possible gate voltage amplification schemes are formulated, and a variety of possible operation schemes are generated, providing a basis for subsequent optimization and selection.

[0048] More specifically, the temperature change is estimated for each gate voltage amplification scheme, the temperature change under each scheme is predicted, and the impact of different voltage amplification schemes on MOSFET temperature is predicted to ensure that the temperature is within a safe range.

[0049] More specifically, based on the temperature safety characteristics, the expected temperature increase characteristics of each temperature are analyzed, the temperature safety of different voltage amplification schemes is evaluated, and the voltage amplification schemes with temperature changes within a safe range are screened out to avoid safety problems caused by overheating.

[0050] More specifically, a number of temperature reduction control plans are formulated for each gate voltage amplification scheme that meets temperature safety requirements, and a temperature reduction plan is provided to ensure that the temperature remains controllable after the voltage is amplified.

[0051] More specifically, the gate voltage amplification scheme is combined with the corresponding temperature reduction control plan to form a complete adjustment plan, providing multiple adjustment plans covering both voltage and temperature control to ensure the comprehensive performance and safety of the system.

[0052] More specifically, conduct a value assessment on each adjustment plan to determine its execution value, evaluate the execution effect and feasibility of the adjustment plan, and select the optimal plan.

[0053] More specifically, the gate voltage increase scheme and the temperature reduction control plan in the adjustment scheme with the best execution value are converted into actual operating parameters, and adjustments are implemented to finally achieve gate voltage adjustment and temperature reduction system adjustment that meet performance safety characteristics.

[0054] It can be understood that through multi-step analysis and prediction, it is ensured that the gate voltage and temperature of the MOSFET are within the safe range to prevent circuit damage and thermal runaway. Multiple solutions are generated and evaluated to ensure that the selected solution achieves the best balance between performance and safety. Through the formulation of a cooling treatment plan, it is ensured that even in the case of voltage increase, the system temperature can be kept within a controllable range to achieve the optimal on-resistance and optimal operating loss achieved by the increase in gate voltage and the control of the cooling system. The operating loss includes the energy loss of the cooling system and the equipment life loss of the MOSFET.

[0055] Preferably, the steps of analyzing the cooling plans for various gate voltage amplification schemes according to the temperature safety prediction characteristics of the gate voltage amplification schemes to obtain several cooling control plans corresponding to the gate voltage amplification schemes include: S251: performing feature matching processing on the temperature safety prediction feature of the gate voltage amplification scheme according to a preset temperature safety standard to obtain a required temperature reduction range corresponding to the temperature safety prediction feature of the gate voltage amplification scheme; S252: performing gradient analysis processing on the required temperature reduction range of the gate voltage amplification scheme to obtain a plurality of required temperature reduction gradients of the gate voltage amplification scheme; S253: Performing gradient execution data analysis on each of the required cooling gradients according to the current cooling system data of the target MOSFET, obtaining system execution data corresponding to each of the required cooling gradients, and converting each of the system execution data to obtain several cooling control plans for the gate voltage amplification scheme.

[0056] Specifically, according to the preset temperature safety standard, the temperature safety prediction characteristics of each gate voltage amplification scheme are subjected to feature matching processing. Through the feature matching processing, the temperature safety prediction characteristics corresponding to each voltage amplification scheme are determined, and the required temperature reduction range is obtained to ensure the temperature safety of each scheme.

[0057] More specifically, based on the results of the feature matching process, the required cooling range corresponding to the temperature safety prediction characteristics of each gate voltage amplification scheme is obtained, and the degree of cooling required for each voltage amplification scheme is clarified to ensure that effective cooling measures can be formulated in subsequent steps.

[0058] More specifically, the required cooling range of each gate voltage amplification scheme is subjected to gradient analysis and decomposed into a number of required cooling gradients, and the required cooling range is refined into different gradients, so that the cooling control plan can be more precisely adapted to actual needs and improve temperature control accuracy.

[0059] More specifically, based on the cooling system data of the target MOSFET at the current moment, gradient execution data analysis is performed on each required cooling gradient, and the status and capacity of the current cooling system are analyzed to ensure that the cooling plan matches the actual system capacity and avoid insufficient or excessive cooling.

[0060] More specifically, the system execution data of each required cooling gradient is converted and processed to obtain the corresponding cooling control plan, and the analysis results are converted into actual executable cooling operation steps to form a specific cooling control plan to ensure feasibility and effectiveness.

[0061] It can be understood that through feature matching processing and gradient analysis processing, the matching accuracy of the gate voltage amplification scheme and the temperature safety standard is improved, ensuring the feasibility and safety of each scheme in terms of temperature. The detailed analysis of the required cooling gradient makes the cooling control more precise, avoiding the problem of too high or too low temperature caused by inaccurate cooling control. The gradient execution data analysis ensures the adaptability of the cooling control plan to the current cooling system data, and ensures the actual operability and effectiveness of the cooling measures. The final cooling control plan is based on the actual capabilities and needs of the current cooling system, has a high degree of feasibility, can be effectively implemented and achieve the expected cooling effect.

[0062] Preferably, the step of performing value evaluation on each of the adjustment schemes to obtain the execution value of each of the adjustment schemes comprises: S271: Analyze the on-resistance optimization degree of the gate voltage amplification scheme in the adjustment scheme to obtain a first optimization value of the adjustment scheme; S272: Predicting the temperature after the temperature reduction control plan in the adjustment plan, obtaining the MOSFET operating temperature corresponding to the temperature reduction control plan, and analyzing the degree of on-resistance degradation of the MOSFET operating temperature, to obtain the second optimization value of the adjustment plan; S273: Analyze the operating loss of the cooling control plan in the adjustment plan to obtain a third optimization value of the adjustment plan; S274: Perform a weighted comprehensive analysis on the first optimization value, the second optimization value, and the third optimization value to obtain the execution value of the adjustment plan.

[0063] Specifically, the degree of on-resistance optimization of the gate voltage amplification scheme in each adjustment scheme is analyzed, the impact of the voltage amplification on the on-resistance of the MOSFET is evaluated, the optimized on-resistance value is calculated, and the first optimization value of the adjustment scheme is obtained. By analyzing the degree of on-resistance optimization, the contribution of the voltage amplification to improving the performance of the MOSFET is clarified, ensuring that the on-resistance is reduced to the optimal level.

[0064] More specifically, the temperature after cooling control is predicted for each cooling control plan in the adjustment scheme to obtain the corresponding MOSFET operating temperature. The MOSFET operating temperature under the cooling control plan is predicted using a thermal model or simulation technology to obtain the MOSFET operating temperature, accurately predict the cooling effect, and ensure that the MOSFET operating temperature is within a safe range.

[0065] More specifically, the degree of on-resistance degradation is analyzed for the operating temperature of the MOSFET, and the influence of the current temperature on the on-resistance is analyzed based on the temperature-on-resistance relationship curve to obtain the second optimization value of the adjustment scheme, and the influence of temperature on the on-resistance is evaluated to ensure that the cooling scheme effectively reduces the temperature correlation of the on-resistance.

[0066] More specifically, the operating losses of the cooling control plan in each adjustment scheme are analyzed, the energy consumption, resource consumption, etc. during the implementation of the cooling control plan are calculated, the third optimization value of the adjustment plan is obtained, the implementation cost and energy efficiency of the cooling control plan are evaluated, and the cooling measures are ensured to be economical and effective.

[0067] More specifically, a weighted comprehensive analysis is performed on the first optimization value, the second optimization value and the third optimization value. According to the preset weighting coefficient (reflecting the importance of each value), each optimization value is comprehensively analyzed to obtain the execution value of the adjustment plan. By comprehensively considering various optimization factors, an execution value reflecting the overall benefit is obtained to provide a basis for decision-making.

[0068] It is understandable that through the comprehensive analysis of on-resistance, temperature influence and operating loss, it is ensured that each adjustment plan achieves optimization effects in many aspects and improves the overall performance. The detailed analysis steps and model prediction make the evaluation of each link more accurate, ensuring that the execution value of the adjustment plan truly reflects the actual effect. The evaluation is carried out from the three dimensions of on-resistance, temperature and loss to ensure the comprehensive optimization of the adjustment plan in terms of performance, stability and economy. Through weighted comprehensive analysis, the weights of different optimization values ​​can be adjusted according to actual needs, providing flexible decision-making support to ensure that the final selected plan best meets actual needs.

[0069] In a second aspect, the present invention provides a method and device for optimizing on-resistance of a silicon carbide MOSFET, which is used to implement a method for optimizing on-resistance of a silicon carbide MOSFET as described in any one of the first aspects.

[0070] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions and improvements made within the spirit and principles of the present invention should be included in the protection scope of the present invention.

Claims

1. A method for optimizing on-resistance of a silicon carbide MOSFET, characterized in that: include: Continuously collecting parameters of the working environment and circuit performance of the target MOSFET to obtain working data of the target MOSFET, and performing performance safety analysis on the target MOSFET according to the working data to obtain performance safety characteristics of the target MOSFET; Performing gate voltage and cooling system adjustment analysis on the target MOSFET according to the performance safety feature to obtain gate voltage adjustment features and cooling system adjustment features that meet the performance safety feature; The gate voltage and the cooling system of the target MOSFET are adjusted according to the gate voltage adjustment characteristics and the cooling system adjustment characteristics, so as to optimize the on-resistance of the target MOSFET.

2. The method for optimizing the on-resistance of a silicon carbide MOSFET according to claim 1, wherein: The steps of continuously collecting parameters of the working environment and circuit performance of the target MOSFET to obtain working data of the target MOSFET, and performing performance safety analysis on the target MOSFET according to the working data to obtain the performance safety characteristics of the target MOSFET include: Continuously collecting parameters of the working environment of the target MOSFET to obtain working environment data of the target MOSFET; wherein the working environment data includes ambient temperature data and cooling system data; Continuously collecting parameters of circuit performance of the target MOSFET to obtain circuit performance data of the target MOSFET; wherein the circuit performance data includes voltage data and current data; Performing a temperature safety analysis on the target MOSFET according to the working environment data to obtain a temperature safety feature of the target MOSFET; Performing a safety analysis on the target MOSFET in terms of circuit parameters according to the circuit performance data to obtain a circuit safety feature of the target MOSFET; The temperature safety feature and the circuit safety feature are combined to obtain a performance safety feature of the target MOSFET.

3. The method for optimizing the on-resistance of a silicon carbide MOSFET according to claim 2, wherein: The step of performing a temperature safety analysis on the target MOSFET according to the working environment data to obtain a temperature safety feature of the target MOSFET comprises: Performing a time-series characteristic analysis on the ambient temperature data to obtain a temperature variation characteristic of the target MOSFET; Performing representative data extraction processing on the ambient temperature data to obtain a stable temperature characteristic of the target MOSFET; Calculating the temperature control effect of the target MOSFET according to the cooling system data to obtain a theoretical cooling effect of the target MOSFET corresponding to the cooling system data; A safety performance feedback analysis is performed on the temperature variation characteristics and the stable temperature characteristics according to the theoretical cooling effect to obtain the temperature safety characteristics of the target MOSFET.

4. The method for optimizing the on-resistance of a silicon carbide MOSFET according to claim 2, wherein: The step of performing a safety analysis on the target MOSFET in terms of circuit parameters according to the circuit performance data to obtain the circuit safety characteristics of the target MOSFET comprises: Performing stability analysis on the voltage data to obtain voltage stability characteristics of the target MOSFET; Performing stability analysis on the current data to obtain current stability characteristics of the target MOSFET; Performing correlation analysis on the voltage data and the current data to obtain circuit correlation characteristics of the target MOSFET; The voltage stability characteristics, current stability characteristics and circuit-related characteristics of the target MOSFET are independently evaluated and weighted comprehensively analyzed to obtain the circuit safety characteristics of the target MOSFET.

5. The method for optimizing on-resistance of a silicon carbide MOSFET according to claim 2, wherein: The step of performing gate voltage and cooling system adjustment analysis on the target MOSFET according to the performance safety feature to obtain gate voltage adjustment features and cooling system adjustment features that meet the performance safety feature includes: Performing gate voltage increase space analysis on voltage data of the target MOSFET at the current moment according to the circuit safety feature to obtain a gate voltage increase space of the target MOSFET; Performing gate voltage amplification scheme analysis on the target MOSFET according to the gate voltage amplification space to obtain several gate voltage amplification schemes for the target MOSFET; Performing temperature change estimation processing on various gate voltage amplification schemes to obtain expected temperature increase characteristics corresponding to various gate voltage amplification schemes; Performing safety prediction analysis on each of the expected temperature increase characteristics according to the temperature safety characteristics to obtain temperature safety prediction characteristics of various gate voltage amplification schemes; Performing a plan analysis on the cooling process of the gate voltage amplification scheme according to the temperature safety prediction characteristics of the gate voltage amplification scheme, and obtaining several cooling control plans corresponding to the gate voltage amplification scheme; Combining the gate voltage amplification scheme and the corresponding various temperature reduction control schemes to obtain several adjustment schemes; A value assessment is performed on each of the adjustment schemes to obtain an execution value of each of the adjustment schemes, and the gate voltage amplification scheme and the temperature reduction control plan in the adjustment scheme with the best execution value are converted to obtain gate voltage adjustment characteristics and temperature reduction system adjustment characteristics that meet the performance safety characteristics.

6. The method for optimizing the on-resistance of a silicon carbide MOSFET according to claim 5, wherein: The steps of analyzing the cooling plans for various gate voltage amplification schemes according to the temperature safety prediction characteristics of the gate voltage amplification schemes to obtain several cooling control plans corresponding to the gate voltage amplification schemes include: Performing feature matching processing on the temperature safety prediction feature of the gate voltage amplification scheme according to a preset temperature safety standard to obtain a required temperature reduction range corresponding to the temperature safety prediction feature of the gate voltage amplification scheme; Performing gradient analysis on the required temperature reduction range of the gate voltage amplification scheme to obtain a number of required temperature reduction gradients of the gate voltage amplification scheme; According to the current cooling system data of the target MOSFET, gradient execution data analysis is performed on each of the required cooling gradients to obtain system execution data corresponding to each of the required cooling gradients, and each of the system execution data is converted to obtain several cooling control plans for the gate voltage amplification scheme.

7. The method for optimizing the on-resistance of a silicon carbide MOSFET according to claim 5, wherein: The steps of performing value evaluation on each of the adjustment plans to obtain the execution value of each of the adjustment plans include: Analyzing the degree of on-resistance optimization of the gate voltage amplification scheme in the adjustment scheme to obtain a first optimization value of the adjustment scheme; Predicting the temperature after the temperature reduction control plan in the adjustment scheme is subjected to temperature reduction control, obtaining the MOSFET operating temperature corresponding to the temperature reduction control plan, and analyzing the degree of on-resistance degradation of the MOSFET operating temperature to obtain the second optimization value of the adjustment scheme; Analyzing the operating loss of the cooling control plan in the adjustment plan to obtain a third optimization value of the adjustment plan; A weighted comprehensive analysis is performed on the first optimization value, the second optimization value, and the third optimization value to obtain the execution value of the adjustment plan.

8. The method for optimizing on-resistance of a silicon carbide MOSFET according to claim 1, wherein: The step of adjusting the gate voltage and the cooling system of the target MOSFET according to the gate voltage adjustment feature and the cooling system adjustment feature to optimize the on-resistance of the target MOSFET includes: Performing gate voltage adjustment processing on the target MOSFET according to the gate voltage adjustment feature, so that the target MOSFET operates under the voltage drive corresponding to the gate voltage adjustment feature; Performing a cooling system adjustment process on the target MOSFET according to the cooling system adjustment feature, so that the cooling system performs a cooling process on the target MOSFET according to the cooling system adjustment feature; By adjusting the gate voltage and the cooling system of the target MOSFET, the on-resistance of the target MOSFET is optimized.

9. A method and device for optimizing on-resistance of silicon carbide MOSFET, characterized in that: A method for optimizing on-resistance of a silicon carbide MOSFET is used to implement any one of claims 1-8.

Images