Defect offset distance monitoring system and method, wafer defect detection method and device, and medium

Abstract

The invention relates to the field of semiconductor chip manufacturing, and discloses a defect offset distance monitoring system and method, a wafer defect detection method, wafer defect detection equipment and a medium. The defect offset distance monitoring system can realize defect offset distance correction configuration between multiple pieces of defect detection equipment and multiple pieces of defect reinspection equipment; therefore, the problem of defect review failure caused by the defect offset distance is solved, meanwhile, the scheme for realizing the defect offset distance correction configuration between the plurality of defect detection devices and the plurality of defect review devices is high in working efficiency, the number of running goods of the process equipment for manufacturing chips is increased, the utilization rate of the process equipment is improved, and the production cost is reduced. And the manufacturing time cost of the chip is reduced. In addition, early warning judgment on the defect offset distance value is added, and defect offset distance correction configuration between multiple pieces of defect detection equipment and multiple pieces of defect review equipment is achieved more accurately.

Description

Technical Field

[0001] The present application relates to the field of semiconductor chip manufacturing, and in particular to a defect offset distance monitoring system and method, a wafer defect detection method, equipment, and medium. Background Art

[0002] In the semiconductor chip manufacturing process, defect detection is one of the key steps to ensure product quality. With the development of semiconductor industry technology, optical defect detection equipment and electron beam defect review equipment are widely used in the field of semiconductor production and manufacturing for nano-level physical defect detection and defect morphology judgment. These two types of equipment each play an important role in defect detection. Due to the limitations of the basic principles of optical detection equipment, it is impossible to image the surface morphology of nano-level defects and accurately judge the type of defects. Therefore, nano-level electron beam defect review equipment is indispensable in the process of imaging and judging the defects identified by optical defect detection equipment.

[0003] However, different optical defect detection devices have differences in the light source, optical path and carrier movement when coordinating the output of defect coordinates, and different electron beam defect review devices also have differences in the electron gun, electron beam, and carrier movement when coordinating the reading of the defect coordinates output by the optical defect detection device. At the same time, there are differences in the definition, recognition, and algorithm of each grain mark (also known as die mark) on the semiconductor wafer between the optical defect detection device and the electron beam defect review device; these differences lead to a certain offset distance in the reading of the defect coordinates of the optical defect detection device by the electron beam defect review device. In addition, the long-term load working environment of the equipment will also cause the reading of the defect coordinates of the optical defect detection device by the electron beam defect review device to have a certain offset distance and cannot be eliminated. With the miniaturization of semiconductor devices and the industry's demandingness on the test results, the interference of the defect offset distance will further amplify the problem of affecting the accuracy of the defect review device's judgment of the defect detection device results, thereby leading to the failure of defect review.

[0004] In summary, there is an urgent need for a defect offset distance monitoring solution that can effectively solve the problem of defect review failure. Summary of the invention

[0005] The present application provides a defect offset distance monitoring system and method, a wafer defect detection method, equipment, and medium, thereby effectively avoiding the problem of defect review failure due to defect offset distance.

[0006] A first aspect of the present application provides a defect offset distance monitoring system, the system is used in an application site including multiple optical defect monitoring devices and multiple electron beam defect review devices, and the system includes:

[0007] A defect offset distance database acquisition module is used to acquire and store the defect offset distance value between each electron beam defect review device and each optical defect monitoring device to form a defect offset distance database;

[0008] a reliability judgment module that is communicatively connected to the defect offset distance database acquisition module, the reliability judgment module performs data processing and analysis based on the defect offset distance database transmitted by the defect offset distance database acquisition module, and judges whether the defect offset distance database has the reliability of the electron beam defect review detection result based on the data processing and analysis results;

[0009] The defect offset distance correction module is communicatively connected to the reliability judgment module and the defect offset distance database acquisition module respectively, and the defect offset distance correction module obtains a correction value for each defect offset distance value in the defect offset database based on the reliability judgment result of the electron beam defect review detection result transmitted by the reliability judgment module, and transmits the correction value to the defect offset distance database acquisition module to refresh and form a corrected defect offset distance database; wherein, when the reliability judgment result is that it is reliable, the correction value is 0.

[0010] In some embodiments of the present application, the defect offset distance database acquisition module is respectively connected to multiple electron beam defect review devices for communication, and the defect offset distance database acquisition module receives the defect offset distance value between each electron beam defect review device and each optical defect monitoring device transmitted by each electron beam defect review device; wherein each electron beam defect review device is configured to obtain multiple defect offset distance values ​​between the electron beam defect review device and the multiple optical defect monitoring devices respectively in the following manner:

[0011] Using each optical defect detection device as a target optical defect detection device, photographing the defect position on the target object based on a position coordinate of a defect on the target object obtained by the target optical defect detection device, so as to obtain a first image of the target object under each electron beam defect review device;

[0012] Identify the defect on the target object, and take a photo of the defect position on the target object with the defect as the center position, to obtain a second image of the target object under each electron beam defect review device;

[0013] Based on the same two-dimensional coordinate system, the coordinates of the center position of the first image of the target object and the coordinates of the center position of the second image of the target object under each electron beam defect review device are obtained;

[0014] Based on the coordinates of the center position of the first image and the coordinates of the center position of the second image of the target object under each electron beam defect review device, the defect offset distance value between the electron beam defect review device and the target optical defect monitoring device is obtained.

[0015] In some embodiments of the present application, each of the electron beam defect review devices is further configured to obtain multiple defect offset distance values ​​between the electron beam defect review device and multiple optical defect monitoring devices respectively in the following manner:

[0016] The coordinates of the center position of the first image and the center position of the second image of the target object under each electron beam defect review device are calculated differently, and the calculation result is used as the defect offset distance value between the electron beam defect review device and the target optical defect monitoring device.

[0017] In some embodiments of the present application, the reliability judgment module is configured to process and analyze the defect offset distance database transmitted by the defect offset distance database acquisition module in the following manner:

[0018] Performing clustering processing on a plurality of defect offset distance values ​​between the plurality of electron beam defect review devices and the plurality of optical defect monitoring devices in the defect offset distance database to obtain a scatter plot corresponding to all defect offset distance values;

[0019] Performing normal distribution processing on the scatter plot using a normal distribution method to obtain a normal distribution plot to which all points in the scatter plot obey;

[0020] Based on the normal distribution diagram obeyed by all points in the scatter plot, the states of multiple defect offset distance values ​​between the multiple electron beam defect review devices and the multiple optical defect monitoring devices are obtained according to a preset standard.

[0021] In some embodiments of the present application, the reliability judgment module is configured to obtain a scatter plot corresponding to all defect offset distance values ​​in the following manner:

[0022] A statistical method is used to perform clustering processing on multiple defect offset distance values ​​between the multiple electron beam defect review devices and the multiple optical defect monitoring devices in the defect offset distance database to obtain a scatter plot corresponding to all defect offset distance values.

[0023] In some embodiments of the present application, the statistical method is a K-Means clustering method.

[0024] In some embodiments of the present application, the normal distribution graph followed by all points in the scatter plot includes a mean value and a standard deviation, and the reliability judgment module is configured to obtain the status of multiple defect offset distance values between the multiple electron beam defect review devices and the multiple optical defect monitoring devices in the following manner:

[0025] The multiple electron beam defect review devices and the multiple optical defect monitoring devices

[0026] The status of multiple defect offset distance values therebetween

[0027]

[0028] Wherein, defect count represents all points in the scatter plot, μ is the mean value of the normal distribution graph followed by all points in the scatter plot, σ is the standard deviation of the normal distribution graph followed by all points in the scatter plot,

[0029] P(μ - σ < defect count < μ + σ) represents the probability that all points in the scatter plot fall within the range of the mean value μ plus or minus one standard deviation σ, P(μ - 2σ < defect count < μ + 2σ) represents the probability that all points in the scatter plot fall within the range of the mean value μ plus or minus two standard deviations σ, P1 is a first preset threshold, and P2 is a second preset threshold.

[0030] In some embodiments of the present application, P1 is 68.26% and P2 is 95.44%.

[0031] In some embodiments of the present application, the reliability judgment module is configured to judge whether the defect offset distance database has the reliability of the electron beam defect review detection result in the following manner:

[0032] If the status of the multiple defect offset distance values between the multiple electron beam defect review devices and the multiple optical defect monitoring devices is healthy, it is determined that the defect offset distance database has the reliability of the electron beam defect review detection result;

[0033] If the status of the multiple defect offset distance values between the multiple electron beam defect review devices and the multiple optical defect monitoring devices is early warning or dangerous, it is determined that the defect offset distance database does not have the reliability of the electron beam defect review detection result.

[0034] In some embodiments of the present application, the defect offset distance correction module is configured to obtain the correction value of each defect offset distance value in the defect offset database in the following manner:

[0035] When the status of multiple defect offset distance values ​​between the multiple electron beam defect review devices and the multiple optical defect monitoring devices is warning or dangerous, the defect offset distance value between each electron beam defect review device and each optical defect monitoring device is corrected based on the scatter plot to obtain a corrected value of each defect offset distance value in the defect offset database.

[0036] In some embodiments of the present application, the defect offset distance correction module is further configured to obtain a correction value of each defect offset distance value in the defect offset database in the following manner:

[0037] A local anomaly factor detection method is used to identify and exclude abnormal points for all points in the scatter plot, and based on the scatter plot after excluding abnormal points, the defect offset distance value between each electron beam defect review device and each optical defect monitoring device is corrected to obtain a corrected value for each defect offset distance value in the defect offset database.

[0038] In some embodiments of the present application, the scatter plot includes a plurality of large clusters and a plurality of small clusters, and the defect offset distance correction module is configured to identify and exclude abnormal points for all points in the scatter plot in the following manner:

[0039] The abnormality score of each point in the scatter plot is calculated based on all clusters in the scatter plot, and based on the abnormality score values ​​of all points, abnormal points are identified and excluded for all points in the scatter plot according to preset rules.

[0040] In some embodiments of the present application, the defect offset distance correction module is configured to calculate the anomaly score of each point in the scatter plot in the following manner:

[0041]

[0042] Wherein, CBLOF(t) represents the abnormal score value of the t-th point in the scatter plot, SC is the set of all small clusters in the scatter plot, LC is the set of all large clusters in the scatter plot, and C i is the ith small cluster in the set SC consisting of all small clusters in the scatter plot or the ith large cluster in the set LC consisting of all large clusters in the scatter plot, C j Represents the large cluster that is closest to the t-th point in the scatter plot.

[0043] A second aspect of the present application provides a defect offset distance monitoring method, which is performed by the system described in any of the above embodiments, and the monitoring method comprises the following steps:

[0044] Acquire and store the defect offset distance value between each electron beam defect review device and each optical defect monitoring device to form a defect offset distance database;

[0045] Performing data processing and analysis on the defect offset distance database, and judging whether the defect offset distance database has the reliability of electron beam defect review detection results based on the data processing and analysis results;

[0046] When the reliability judgment result is that it is not reliable, each defect offset distance value in the defect offset database is corrected; when the reliability judgment result is that it is reliable, the defect offset database is not corrected.

[0047] A third aspect of the present application provides a wafer defect detection method, the method being used in an application scenario including multiple optical defect detection devices and multiple electron beam defect review devices, and the method comprising:

[0048] Obtaining a wafer to be inspected;

[0049] Using the system described in any of the above embodiments, based on the wafer to be inspected, obtain a corrected defect offset distance value between each electron beam defect review device and each optical defect monitoring device;

[0050] Randomly select an electron beam defect review device and an optical defect monitoring device, and adjust a preset defect offset distance value parameter in the electron beam defect inspection device based on the corrected defect offset distance value between the selected electron beam defect review device and the optical defect monitoring device;

[0051] Defect detection is performed on the wafer to be inspected by using the selected optical defect detection equipment and the electron beam defect review equipment after adjusting the preset defect offset distance value parameters.

[0052] The fourth aspect of the present application provides an electronic device, comprising a memory, a processor, and a computer program stored in the memory and executable on the processor, wherein the processor implements the steps of the method described in any one of the second aspect and the third aspect of the above-mentioned embodiment when executing the computer program.

[0053] The fifth aspect of the present application provides a computer-readable storage medium having program instructions stored thereon, and when the program instructions are executed by a processor, the method described in any one of the second aspect and the third aspect of the above embodiments is implemented.

[0054] This application has the following beneficial effects:

[0055] The defect offset distance monitoring scheme of the present application obtains the defect offset distance value between each electron beam defect review device and each optical defect monitoring device, and judges the reliability of all defect offset distance values, and when the defect offset distance value between two set devices is unreliable, the unreliable defect offset distance value is corrected. The correction scheme of the present application can realize the defect offset distance correction configuration between multiple defect detection devices and multiple defect review devices, thereby effectively avoiding the problem of defect review failure caused by defect offset distance. At the same time, the scheme of the present application for realizing the defect offset distance correction configuration between multiple defect detection devices and multiple defect review devices has high working efficiency, increases the number of runs of process equipment for chip manufacturing, improves the utilization rate of process equipment, and reduces the manufacturing time cost of chips. In addition, the present application also adds early warning judgment of the defect offset distance value, and more accurately realizes the defect offset distance correction configuration between multiple defect detection devices and multiple defect review devices. BRIEF DESCRIPTION OF THE DRAWINGS

[0056] The drawings herein are incorporated into the specification and constitute a part of the specification. These drawings illustrate embodiments consistent with the present application and are used together with the specification to illustrate the technical solution of the present application.

[0057] Figure 1 This is an example schematic diagram of configuring the defect offset distance value in the recipe of the electron beam defect review equipment to obtain a defect detection map;

[0058] Figure 2 It is a schematic diagram of the framework of an embodiment of a defect offset distance monitoring system provided by the present application;

[0059] Figure 3 It is a flow chart of an embodiment of a method for calculating multiple defect offset distance values ​​between each electron beam defect review device and multiple optical defect monitoring devices provided by the present application;

[0060] Figure 4 is an example schematic diagram of calculating the defect offset distance value provided by the present application;

[0061] Figure 5 It is a flow chart of an embodiment of a method for processing and analyzing the defect offset distance database transmitted by the defect offset distance database acquisition module provided by the present application;

[0062] Figure 6 This is a schematic diagram of an example of a scatter plot corresponding to all defect offset distance values ​​obtained using the K-Means clustering method provided in this application;

[0063] Figure 7This is a schematic diagram of an example of a normal distribution diagram obtained by performing normal distribution processing on a scatter plot provided by the present application, to obtain a normal distribution diagram to which all points in the scatter plot conform;

[0064] Figure 8 It is a flow chart of a comparison method for detecting defects on a wafer in the prior art and the present application;

[0065] Fig. 9 It is a flow chart of an embodiment of a defect offset distance monitoring method provided by the present application;

[0066] Fig.10 It is a schematic diagram of a process flow of an embodiment of a wafer defect detection method provided by the present application;

[0067] Fig.11 It is a schematic diagram of a framework of an embodiment of an electronic device provided by the present application;

[0068] Fig.12 It is a schematic diagram of a framework of an embodiment of a computer-readable storage medium provided by the present application. DETAILED DESCRIPTION

[0069] The scheme of the embodiment of the present application is described in detail below in conjunction with the drawings of the specification.

[0070] In the following description, for the purpose of explanation rather than limitation, specific details such as specific system structures, interfaces, and technologies are provided to facilitate a thorough understanding of the present application.

[0071] The term "and / or" in this article is only a description of the association relationship of associated objects, indicating that there may be three relationships. For example, A and / or B can represent: A exists alone, A and B exist at the same time, and B exists alone. In addition, the character " / " in this article generally indicates that the objects associated before and after are in an "or" relationship. In addition, "many" in this article means two or more than two. In addition, the term "at least one" in this article means any combination of at least two of any one or more of a plurality of, for example, including at least one of A, B, and C, can mean including any one or more elements selected from the set consisting of A, B, and C.

[0072] As described in the background technology, different optical defect detection devices have differences in the light source, optical path and carrier movement in coordinating the output of defect coordinates, and different electron beam defect review devices also have differences in the electron gun, electron beam, and carrier movement in coordinating the reading of the defect coordinates output by the optical defect detection device. At the same time, there are differences in the definition, recognition, and algorithm of each grain mark (also called die mark) on the semiconductor wafer between the optical defect detection device and the electron beam defect review device. These differences will cause the electron beam defect review device to read the defect coordinates of the optical defect detection device with a certain offset distance. In addition, the long-term load working environment of the equipment will also cause the electron beam defect review device to read the defect coordinates of the optical defect detection device with a certain offset distance and it cannot be eliminated. For example, Figure 1 As shown, it shows a schematic diagram of configuring the defect offset distance value in the recipe of the electron beam defect review device to obtain a defect detection image, wherein the electron beam defect review device takes a picture before configuring the defect offset distance value in the review recipe of the electron beam defect review device. Figure 1 (a) After configuring the defect offset distance value in the inspection recipe of the electron beam defect review equipment, the electron beam defect review equipment takes a picture to obtain Figure 1 (b) from Figure 1 (b) It can be seen that the defect offset distance value configured in the review recipe of the electron beam defect review equipment is highly accurate, so a normal defect detection result diagram (i.e., Normal Defect Output) is obtained;

[0073] However, if Figure 1 As shown in FIG. 1 , there are differences between different optical defect detection devices. These differences result in a certain offset distance when the same electron beam defect review device reads the defect coordinates of different optical defect detection devices. For example, Figure 1 As shown in (c), the defect offset distance value configured in the review recipe of the electron beam defect review device, which has high accuracy for the current optical inspection device, may not be highly accurate after replacing an optical defect inspection device, and an early warning reminder will appear in the defect inspection result; in addition, the long-term load working environment of the equipment will also cause the electron beam defect review device to read the defect coordinates of the optical defect inspection device. There must be a certain offset distance and it cannot be eliminated, that is, Figure 1 As shown in (d), the defect offset distance value configured in the review recipe of the electron beam defect review device, which has high accuracy for the optical inspection device, may not be highly accurate after a long period of running. The defect detection result may have the risk of missing defects due to the excessively large defect offset distance value. Therefore, the target urgently needs a defect offset distance monitoring solution that can effectively solve the problem of defect review failure.

[0074] The existing defect review technology uses manual adjustment to correct the defect offset distance when establishing the review and detection program (also known as the review recipe) of the electron beam defect review equipment, which solves the problem of defect review failure caused by the defect offset distance. There are also electron beam defect review equipment that can measure the defect offset distance between it and the optical defect detection equipment and output the value to the relevant file. By monitoring and calculating the defect offset distance, the defect offset distance in the review recipe is modified to achieve accurate review of defects. However, the defect offset distance correction configuration process between the existing electron beam defect review equipment and the optical defect detection equipment only allows one-to-one equipment or defaults to use the same defect offset distance. It is impossible to implement the defect offset distance correction configuration between multiple optical defect detection equipment and electron beam defect review equipment, resulting in low work efficiency, which further leads to a reduction in the number of runs of process equipment for chip manufacturing, reduces the utilization rate of process equipment, and increases the manufacturing time cost of chips.

[0075] To this end, the present application proposes a new monitoring scheme for the defect offset distance between electron beam defect review equipment and optical defect detection equipment. In the scheme of the present application, by obtaining the defect offset distance value between each electron beam defect review equipment and each optical defect monitoring equipment, and judging the reliability of all defect offset distance values, and when the defect offset distance value between two set devices is unreliable, the unreliable defect offset distance value is corrected. The monitoring scheme of the present application can realize the correction of the defect offset distance between multiple optical defect detection equipment and multiple electron beam defect review equipment when it is unreliable, thereby solving the problem of defect review failure caused by defect offset distance. At the same time, the scheme of the present application for realizing defect offset distance monitoring between multiple optical defect detection equipment and multiple electron beam defect review equipment has high working efficiency, increases the number of runs of process equipment for chip manufacturing, improves the utilization rate of process equipment, and reduces the manufacturing time cost of chips.

[0076] The present application is described in detail below with reference to the accompanying drawings and specific embodiments.

[0077] According to one embodiment of the present application, Figure 2As shown, the present application provides a defect offset distance monitoring system, which is used in an application site including multiple optical defect monitoring devices and multiple electron beam defect review devices, and the system includes: a defect offset distance database acquisition module, which is used to acquire and store the defect offset distance value between each electron beam defect review device and each optical defect monitoring device to form a defect offset distance database; a reliability judgment module that is communicatively connected to the defect offset distance database acquisition module, the reliability judgment module performs data processing and analysis based on the defect offset distance database transmitted by the defect offset distance database acquisition module, and judges whether the defect offset distance database has the reliability of the electron beam defect review detection result based on the data processing and analysis results; a defect offset distance correction module that is communicatively connected to the reliability judgment module and the defect offset distance database acquisition module respectively, the defect offset distance correction module obtains a correction value of each defect offset distance value in the defect offset database based on the reliability judgment result of the electron beam defect review detection result transmitted by the reliability judgment module, and transmits the correction value to the defect offset distance database acquisition module to refresh and form a corrected defect offset distance database; wherein, when the reliability judgment result is that it has reliability, the correction value is 0.

[0078] The monitoring scheme of the above-mentioned embodiment of the present application can realize the defect offset distance correction configuration between multiple optical defect detection devices and multiple electron beam defect review devices, thereby solving the problem of defect review failure caused by defect offset distance. At the same time, the scheme of realizing defect offset distance monitoring between multiple optical defect detection devices and multiple electron beam defect review devices of the present application has high working efficiency, increases the number of runs of process equipment for making chips, improves the utilization rate of process equipment, and reduces the manufacturing time cost of chips. In addition, the present application also adds early warning judgment of the defect offset distance value, and more accurately realizes the defect offset distance correction configuration between multiple optical defect detection devices and multiple electron beam defect review devices.

[0079] In addition, the inventor has discovered through research that the prior art uses manual calculation to obtain the defect offset distance between an optical defect detection device and an electron beam defect review device. However, when manually calculating the defect offset distance between the two devices, only the defect offset distance between the two devices (i.e., an optical defect detection device and an electron beam defect review device) can be calculated each time. When performing wafer defect detection, many devices usually detect many wafers at the same time. This manual calculation method of calculating the defect offset distance between the two devices will reduce the efficiency of wafer defect detection and review. At the same time, the manual calculation of the defect offset distance between the two devices is also affected by certain objective factors, resulting in inaccurate calculation results. When the defect offset distance parameters in the electron beam defect review device are adjusted according to the erroneous defect offset distance value between the electron beam defect review device and the optical defect detection device to achieve wafer defect review, the defect review will fail.

[0080] To this end, according to one embodiment of the present application, still refer to Figure 2 As shown, the defect offset distance database acquisition module is respectively connected to multiple electron beam defect review devices for communication, and the defect offset distance database acquisition module receives the defect offset distance value between each electron beam defect review device and each optical defect monitoring device transmitted by each electron beam defect review device; wherein, Figure 3 As shown, each electron beam defect review device is configured to execute the following steps S1-S4 to obtain multiple defect offset distance values ​​between the electron beam defect review device and multiple optical defect monitoring devices: S1. Take each optical defect detection device as a target optical defect detection device, and based on a position coordinate of a defect on the target object obtained by the target optical defect detection device, photograph the defect position on the target object to obtain a first image of the target object under each electron beam defect review device; S2. Identify the defect on the target object, and photograph the defect position on the target object with the defect as the center position to obtain a second image of the target object under each electron beam defect review device; S3. Based on the same two-dimensional coordinate system, obtain the coordinates of the center position of the first image of the target object under each electron beam defect review device and the coordinates of the center position of the second image of the target object; S4. Based on the coordinates of the center position of the first image of the target object under each electron beam defect review device and the coordinates of the center position of the second image, obtain the defect offset distance value between the electron beam defect review device and the target optical defect monitoring device.

[0081] In order to more clearly understand the calculation process of the defect offset distance value between each electron beam defect review device and each optical defect monitoring device, the scheme of step S4 is described in detail below.

[0082] Among them, according to one embodiment of the present application, each electron beam defect review device is also configured to calculate the difference between the coordinates of the center position of the first image and the coordinates of the center position of the second image of the target object under each electron beam defect review device, and use the calculation result as the defect offset distance value between the electron beam defect review device and the target optical defect monitoring device.

[0083] For example, Figure 4 As shown, it shows an example schematic diagram of calculating the defect offset distance value between each electron beam defect review device and the target optical defect monitoring device, where, Figure 4 As shown in (a), it is a position coordinate of a defect on a target object obtained by a target optical defect detection device, wherein an electron beam defect review device photographs the defect position on the target object to obtain a first image of the target object under the electron beam defect review device; as shown in Figure 4 (b) shows a second image of the target object obtained by one of the electron beam defect inspection devices identifying a defect on the target object and photographing the defect position on the target object with the defect as the center position. According to the description of step S4 above, Figure 4 By calculating the difference between the coordinates of the center position of (a) and the coordinates of the center position of 4(b), the defect offset distance value between the electron beam defect review equipment and the target optical defect detection equipment can be obtained.

[0084] It can be seen from the above description that the above embodiment of the present application obtains multiple position coordinates of defects on the target object through multiple optical defect detection devices, wherein each optical defect detection device is used to detect the target object to obtain a position coordinate of the defect on the target object; multiple electron beam defect review devices obtain multiple defect offset distance values ​​between multiple electron beam defect review devices and multiple optical defect monitoring devices based on the multiple position coordinates of defects on the target object obtained by the multiple optical defect detection devices, wherein each electron beam defect review device is used to obtain multiple defect offset distance values ​​between the electron beam defect review device and multiple optical defect monitoring devices based on the multiple position coordinates of defects on the target object obtained by the multiple optical defect detection devices. The defect offset distance monitoring system of the present application can simultaneously realize the calculation of defect offset distance values ​​between multiple electron beam defect review devices and multiple optical defect detection devices, thereby improving the calculation efficiency and accuracy of defect offset distance values, thereby improving the efficiency and success rate of defect detection and review.

[0085] The inventors also discovered through research that currently there are few real-time monitoring systems for defect offset distances in the optical defect detection equipment and electron beam defect review equipment in the industry. As a result, the coordinates of defects detected by many optical defect detection devices exceed the detection field of view of the electron beam defect review equipment due to excessive product loss, resulting in erroneous subsequent detection results. In addition, there is no early warning mechanism, which results in batches (also known as lots) of semiconductor products that originally had detection problems being misjudged.

[0086] To this end, the defect offset distance monitoring system in the above-mentioned embodiment of the present application performs real-time monitoring of the position offset distance of the coordinates of the defects detected by the optical defect detection device read by the electron beam defect review device, and observes and corrects the changes in the defect offset distance in real time to timely adjust the defect offset distance value in the recipe of the electron beam defect review device to ensure the accuracy of the defect review result. In order to more clearly understand how the defect offset distance monitoring system of the present application realizes real-time reliability evaluation and correction of the defect offset distance, the reliability judgment module and the defect offset distance correction module in the defect offset distance monitoring system of the above-mentioned embodiment are described in detail below.

[0087] 1. Reliability Judgment Module

[0088] The reliability judgment module is used to process and analyze data based on the defect offset distance database transmitted by the defect offset distance database acquisition module, and judge whether the defect offset distance database has the reliability of the electron beam defect review detection result based on the data processing and analysis results.

[0089] According to one embodiment of the present application, Figure 5 As shown, the reliability judgment module is configured to execute steps T1-T3 to complete data processing and analysis of the defect offset distance database transmitted by the defect offset distance database acquisition module: T1, clustering multiple defect offset distance values ​​between multiple electron beam defect review devices and multiple optical defect monitoring devices in the defect offset distance database to obtain a scatter plot corresponding to all defect offset distance values; T2, using a normal distribution method to perform normal distribution processing on the scatter plot to obtain a normal distribution plot that all points in the scatter plot obey; T3, based on the normal distribution plot that all points in the scatter plot obey, obtain the status of multiple defect offset distance values ​​between multiple electron beam defect review devices and multiple optical defect monitoring devices according to a preset standard. Steps T1-T3 are explained in detail below.

[0090] (I) Step T1

[0091] In step T1, a plurality of defect offset distance values ​​between a plurality of electron beam defect review devices and a plurality of optical defect monitoring devices in a defect offset distance database are clustered to obtain a scatter plot corresponding to all defect offset distance values.

[0092] According to one embodiment of the present application, the reliability judgment module is configured to use a statistical method to perform clustering processing on multiple defect offset distance values ​​between multiple electron beam defect review devices and multiple optical defect monitoring devices in the defect offset distance database to obtain a scatter plot corresponding to all defect offset distance values. At the same time, according to another embodiment of the present application, the statistical method is a K-Means clustering method. Figure 6 As shown, it is a scatter plot corresponding to all defect offset distance values ​​obtained by using the K-Means clustering method. It should be noted that the K-Means clustering method is only one embodiment of the scatter plot corresponding to all defect offset distance values ​​obtained in this application. The scatter plot corresponding to all defect offset distance values ​​obtained in this application can adopt other statistical methods. The specific selection depends on factors such as data distribution, number of clusters, computing resources, result interpretability, target requirements and data dimensions, and is not specifically limited here.

[0093] It can be seen from the above embodiments that the use of statistical methods can more accurately identify and classify defect offset distance values, thereby improving the accuracy of data analysis.

[0094] (II) Step T2

[0095] In step T2, the scatter plot is processed into a normal distribution using a normal distribution method to obtain a normal distribution plot to which all points in the scatter plot conform.

[0096] For example, Figure 7 As shown, it shows an example of a normal distribution diagram obtained by processing the scatter plot with normal distribution to obtain a normal distribution diagram that all points in the scatter plot obey, where: Figure 7 (a) is a schematic diagram of the detection field of view of the electron beam defect review equipment. Figure 7 It can be seen from (a) that when the defect offset distance value is within the range of 1.73 in the two-dimensional coordinate system, the defect offset distance value is judged to be healthy; when the defect offset distance value is within the range between 1.73-2.45 in the two-dimensional coordinate system, the defect offset distance value is judged to be warning; when the defect offset distance value is within the range after 2.45 in the two-dimensional coordinate system, the defect offset distance value is judged to be dangerous. Figure 7(b) is the normal distribution graph followed by all the points in the scatter plot obtained by processing the scatter plot using the normal distribution method. It should be noted that the values in the detection field of view graph of the electron beam defect review equipment are only examples in this application to better understand how to obtain the normal distribution graph followed by all the points in the scatter plot. The specific values shall be determined according to the statistical analysis results of the defect offset distance value detection data actually calculated, and no specific limitation is made here.

[0097] (III) Step T3

[0098] In step T3, based on the normal distribution graph followed by all the points in the scatter plot, the states of multiple defect offset distance values between multiple electron beam defect review devices and the multiple optical defect monitoring devices are obtained according to a preset standard.

[0099] Among them, according to an embodiment of the present application, the normal distribution graph followed by all the points in the scatter plot includes a mean value and a standard deviation, and the reliability judgment module is configured to obtain the states of multiple defect offset distance values between multiple electron beam defect review devices and multiple optical defect monitoring devices in the following manner:

[0100] Multiple electron beam defect review devices and multiple optical defect monitoring devices

[0101] The states of multiple defect offset distance values between them

[0102]

[0103] Among them, defect count represents all the points in the scatter plot, μ is the mean value of the normal distribution graph followed by all the points in the scatter plot, σ is the standard deviation of the normal distribution graph followed by all the points in the scatter plot, P(μ - σ < defect count < μ + σ) represents the probability that all the points in the scatter plot fall within the range of the mean value μ plus or minus one standard deviation σ, P(μ - 2σ < defect count < μ + 2σ) represents the probability that all the points in the scatter plot fall within the range of the mean value μ plus or minus two standard deviations σ, P1 is the first preset threshold, and P2 is the second preset threshold.

[0104] Among them, according to an embodiment of the present application, P1 is 68.26% and P2 is 95.44%. And for a more intuitive understanding of the states of multiple defect offset distance values between multiple electron beam defect review devices and multiple optical defect monitoring devices, the specific determination is shown in Table 1. It should be noted that P1 being 68.26% and P2 being 95.44% are only one embodiment in this application for obtaining the states of multiple defect offset distance values between multiple electron beam defect review devices and multiple optical defect monitoring devices. The specific values shall be determined according to the statistical analysis results of the defect offset distance value detection data actually calculated, and no specific limitation is made here.

[0105] Table 1

[0106]

[0107] The above-mentioned embodiment of the present application can realize quantitative assessment of the severity of defect offset distance by judging the status of multiple defect offset distance values ​​between multiple electron beam defect review devices and multiple optical defect monitoring devices, and support refined risk management through clear risk level classification. At the same time, the use of unified standards to define status intervals ensures the consistency and objectivity of the evaluation. With the addition of new data, the dynamically adjusted threshold can better reflect the actual situation. In addition, simple and intuitive mathematical operations lower the technical threshold, so that non-professionals can easily master and use this evaluation system, which improves the efficiency and effectiveness of defect monitoring and management as a whole.

[0108] According to one embodiment of the present application, the reliability judgment module is configured to judge whether the defect offset distance database has the reliability of the electron beam defect review detection result in the following manner:

[0109] If the status of multiple defect offset distance values ​​between multiple electron beam defect review devices and multiple optical defect monitoring devices is healthy, then the defect offset distance database is determined to have the reliability of electron beam defect review detection results; if the status of multiple defect offset distance values ​​between the multiple electron beam defect review devices and the multiple optical defect monitoring devices is warning or dangerous, then the defect offset distance database is determined to not have the reliability of electron beam defect review detection results. Among them, the reliability of electron beam defect review detection results refers to the defect detection situation within the detection field of the electron beam defect review device after the defect offset distance value corresponding to the optical defect monitoring device is set in the review recipe of the electron beam defect review device.

[0110] It can be seen from the above embodiments that by judging whether the defect offset distance database has the reliability of the electron beam defect review detection results, a corresponding early warning mechanism can be set up to achieve real-time and accurate monitoring of the defect offset distance value output by the electron beam defect review equipment, thereby improving the accuracy of review defect image quality monitoring.

[0111] 2. Defect offset distance correction module

[0112] The defect offset distance correction module is used to obtain the correction value of each defect offset distance value in the defect offset database based on the reliability judgment result of the electron beam defect review test result transmitted by the reliability judgment module, and transmit the correction value to the defect offset distance database acquisition module to refresh and form a corrected defect offset distance database; wherein, when the reliability judgment result is reliable, the correction value is 0. It should be noted that the correction value of 0 indicates that no correction action is taken when the reliability judgment result is reliable. Therefore, the numerical value here can use any other numerical value to indicate that no correction action is taken when the reliability judgment result is reliable, and no specific limitation is made here.

[0113] According to one embodiment of the present application, the defect offset distance correction module is configured to correct the defect offset distance value between each electron beam defect review device and each optical defect monitoring device based on the scatter plot when the status of multiple defect offset distance values ​​between multiple electron beam defect review devices and multiple optical defect monitoring devices is warning or dangerous, so as to obtain a corrected value of each defect offset distance value in the defect offset database. According to another embodiment of the present application, the defect offset distance correction module is also configured to use a local abnormality factor detection method to identify abnormal points of all points in the scatter plot and exclude abnormal points, and based on the scatter plot after excluding abnormal points, correct the defect offset distance value between each electron beam defect review device and each optical defect monitoring device to obtain a corrected value of each defect offset distance value in the defect offset database.

[0114] It can be seen from the above embodiments that the defect offset distance value is corrected in the warning or dangerous state, and the abnormal points are eliminated by using the local abnormal factor detection method, which significantly improves the accuracy and reliability of the defect offset distance value, thereby optimizing the efficiency of defect detection and management.

[0115] According to one embodiment of the present application, the scatter plot includes multiple large clusters and multiple small clusters, and the defect offset distance correction module is configured to calculate the abnormal score of each point in the scatter plot based on all clusters in the scatter plot, and based on the abnormal score values ​​of all points, identify and exclude abnormal points for all points in the scatter plot according to preset rules. According to another embodiment of the present application, the defect offset distance correction module is configured to calculate the abnormal score of each point in the scatter plot in the following manner:

[0116]

[0117] Among them, CBLOF(t) represents the abnormal score value of the t-th point in the scatter plot, SC is the set of all small clusters in the scatter plot, LC is the set of all large clusters in the scatter plot, and C iis the ith small cluster in the set SC of all small clusters in the scatter plot or the ith large cluster in the set LC of all large clusters in the scatter plot, C j Represents the large cluster closest to the tth point in the scatter plot.

[0118] As can be seen from the above description, the above embodiment effectively improves the accuracy of the defect offset distance value by calculating the abnormal score of each point in the scatter plot and identifying and excluding abnormal points based on these scores. This method not only enhances the reliability of defect detection results, but also further improves the overall efficiency and effect of defect management and analysis by optimizing data quality.

[0119] In order to more intuitively understand the difference between the present application and the prior art, the following takes the detection of defects on a wafer as an example from the method side combined with Figure 8 and Fig. 9 Describe the prior art and this application in detail. Figure 8 As shown, it shows a schematic diagram of the defect detection process of the prior art and the present application.

[0120] Among them, from Figure 8 As can be seen from (a), the prior art is divided into two stages to detect defects on wafers: (1) the program setting stage (also known as the recipe setting stage), that is, manually setting the defect offset distance value between the defect review device and the defect detection setting in the recipe on the electron beam defect review device, and manually correcting the defect offset distance value in the recipe on the electron beam defect review device based on the defect review result output in the wafer detection stage; (2) the wafer detection stage, that is, after setting the defect offset distance value on the electron beam defect review device, the electron beam defect review device is used to perform defect review on the wafer to obtain the defect review result, and the defect review result is manually checked and corrected, and the wafer is then inspected based on the corrected defect offset distance value in the recipe on the electron beam defect review device. In actual operation of the prior art, one defect review takes about 4 seconds, and online fine-tuning of the defect offset distance in one program takes about 30 minutes of equipment operation time.

[0121] from Figure 8As can be seen from (b), the present application is to realize defect detection on the wafer, which is also divided into two stages: (1) the program setting stage, that is, by setting the defect offset distance value between the defect review device and the defect detection setting in the recipe on the electron beam defect review device in real time, and based on the defect review result output in the wafer detection stage, the defect offset distance value in the recipe on the electron beam defect review device is corrected by real-time calculation; (2) the wafer detection stage, that is, after setting the defect offset distance value on the defect review device, the defect review device is used to perform defect detection on the wafer, and finally the defect review result is obtained, and a real-time warning of the defect offset distance value is realized based on the defect review result, and the defect offset distance value in the recipe on the electron beam defect review device is corrected by real-time calculation based on the warning result, and the wafer is inspected again based on the corrected defect offset distance value in the recipe on the electron beam defect review device. In summary, according to one embodiment of the present application, Fig. 9 As shown, the present application provides a defect offset distance monitoring method, which is implemented by any of the above-mentioned embodiments. The monitoring method performs the following steps Q1-Q3 to complete the correction of the defect offset distance value: Q1. Acquire and store the defect offset distance value between each electron beam defect review device and each optical defect monitoring device to form a defect offset distance database; Q2. Perform data processing and analysis on the defect offset distance database, and judge whether the defect offset distance database has the reliability of the electron beam defect review detection result based on the data processing and analysis results; Q3. When the reliability judgment result is that it is not reliable, correct each defect offset distance value in the defect offset database; when the reliability judgment result is that it is reliable, do not correct the defect offset database. In actual operation, the present invention requires about 5 minutes of equipment operation time to fine-tune the defect offset distance in a program offline once.

[0122] In summary, compared with the prior art using manual adjustment to correct the configuration of the defect offset distance, the correction scheme of the present application can realize the correction configuration of the defect offset distance between multiple defect detection devices and multiple defect review devices, thereby solving the problem of defect review failure. At the same time, the present application realizes the defect offset distance correction configuration between multiple defect detection devices and multiple defect review devices. The scheme has high working efficiency, increases the number of running goods of process equipment for making chips, improves the utilization rate of process equipment, and reduces the manufacturing time cost of chips. In addition, the present application also adds early warning judgment of the defect offset distance value, and more accurately realizes the defect offset distance correction configuration between multiple defect detection devices and multiple defect review devices; and compared with the recipe in the online fine-tuning electron beam review device of the prior art, the recipe in the offline fine-tuning electron beam review device of the present invention can avoid interruptions and delays in the production process and improve production efficiency. By fine-tuning during non-production time or using simulation data, process parameters can be optimized without affecting the normal production process, ensuring that the optimal performance can be achieved immediately when the recipe is put into use, thereby reducing the scrap rate and adjustment costs, and improving the overall production quality.

[0123] In order to improve the quality of manufactured chips, it is necessary to perform real-time defect detection on the wafer. Therefore, according to an embodiment of the present application, Fig.10 As shown, the present application provides a wafer defect detection method for an application scenario including multiple optical defect detection devices and multiple electron beam defect review devices, and the method includes: P1, obtaining a wafer to be detected; P2, using the system in any of the above embodiments to obtain a corrected defect offset distance value between each electron beam defect review device and each optical defect monitoring device based on the wafer to be detected; P3, arbitrarily selecting an electron beam defect review device and an optical defect monitoring device, and based on the corrected defect offset distance value between the selected electron beam defect review device and the optical defect monitoring device, adjusting a preset defect offset distance value parameter in the electron beam defect detection device; P4, performing defect detection on the wafer to be detected using the selected optical defect detection device and the electron beam defect review device after adjusting the preset defect offset distance value parameter.

[0124] From the above description, it can be seen that in the above embodiment of the present application, the defect offset distance between the electron beam defect review equipment and the optical defect detection equipment is monitored in real time by the defect offset distance monitoring system, which can better reflect the reliability of the wafer defect review results, and timely adjust and correct the defect offset distance in the review recipe, thereby improving the effective utilization rate of the process equipment. At the same time, the defect offset distance monitoring system of the above embodiment of the present application can realize accurate detection of defects on the wafer, thereby increasing the number of runs of the process equipment for making chips and reducing the manufacturing time cost of chips.

[0125] Based on the inventive concept of the above embodiments, the present application further provides an electronic device, including a memory, a processor, and a computer program stored in the memory and executable on the processor, wherein the processor implements the steps of the method described in the above embodiments when executing the computer program. Fig.11 Provide detailed explanation.

[0126] like Fig.11 As shown, it shows the electronic device of the present application, which may specifically include a processor 110 and a memory 120. The memory 120 is coupled to the processor 110.

[0127] The processor 110 is used to control the operation of the electronic device. The processor 110 may also be referred to as a CPU (Central Processing Unit). The processor 110 may be an integrated circuit chip having the ability to process signals. The processor 110 may also be a general-purpose processor, a digital signal processor (DSP), an application-specific integrated circuit (ASIC), a field programmable gate array (FPGA) or other programmable logic devices, discrete gate or transistor logic devices, discrete hardware components. A general-purpose processor may be a microprocessor or the processor 110 may also be any conventional processor, etc.

[0128] The memory 120 is used to store computer programs, and may be a RAM, a ROM, or other types of storage terminals. Specifically, the memory 120 may include one or more computer-readable storage media, which may be non-transitory or transient. The memory 120 may also include a high-speed random access memory, and a non-volatile memory, such as one or more disk storage terminals, flash memory storage terminals. In some embodiments, the non-transitory computer-readable storage medium in the memory 120 is used to store at least one program code.

[0129] The processor 110 is used to execute the computer program stored in the memory 120 to implement the methods described in the various method embodiments of the present application.

[0130] In some embodiments, the electronic device may further include: a peripheral terminal interface 130 and at least one peripheral terminal. The processor 110, the memory 120 and the peripheral terminal interface 130 may be connected via a bus or a signal line. Each peripheral terminal may be connected to the peripheral terminal interface 130 via a bus, a signal line or a circuit board. Specifically, the peripheral terminal includes: at least one of a radio frequency circuit 140, a display screen 150, an audio circuit 160 and a power supply 170.

[0131] The peripheral terminal interface 130 may be used to connect at least one peripheral terminal related to I / O (Input / output) to the processor 110 and the memory 120. In some embodiments, the processor 110, the memory 120, and the peripheral terminal interface 130 are integrated on the same chip or circuit board; in some other implementations, any one or two of the processor 110, the memory 120, and the peripheral terminal interface 130 may be implemented on a separate chip or circuit board, which is not limited in this embodiment.

[0132] The radio frequency circuit 140 is used to receive and transmit RF (Radio Frequency) signals, also known as electromagnetic signals. The radio frequency circuit 140 communicates with the communication network and other IoT devices through electromagnetic signals, and the radio frequency circuit 140 is the communication circuit of the electronic device. The radio frequency circuit 140 converts the electrical signal into an electromagnetic signal for transmission, or converts the received electromagnetic signal into an electrical signal. Optionally, the radio frequency circuit 140 includes: an antenna system, an RF transceiver, one or more amplifiers, a tuner, an oscillator, a digital signal processor, a codec chipset, an operator identity module card, and the like. The radio frequency circuit 140 can communicate with other terminals through at least one wireless communication protocol. The wireless communication protocol includes but is not limited to: the World Wide Web, a metropolitan area network, an intranet, various generations of mobile communication networks (2G, 3G, 4G and 5G), a wireless local area network and / or a WiFi (Wireless Fidelity) network. In some embodiments, the radio frequency circuit 140 may also include circuits related to NFC (Near Field Communication), which is not limited in this application.

[0133] The display screen 150 is used to display the UI (User Interface). The UI may include graphics, text, icons, videos, and any combination thereof. When the display screen 150 is a touch display screen, the display screen 150 also has the ability to collect touch signals on the surface or above the surface of the display screen 150. The touch signal can be input to the processor 110 as a control signal for processing. At this time, the display screen 150 can also be used to provide virtual buttons and / or virtual keyboards, also known as soft buttons and / or soft keyboards. In some embodiments, the display screen 150 can be one, set on the front panel of the electronic device; in other embodiments, the display screen 150 can be at least two, respectively set on different surfaces of the electronic device or in a folding design; in other embodiments, the display screen 150 can be a flexible display screen, set on a curved surface or a folding surface of the electronic device. Even, the display screen 150 can also be set to a non-rectangular irregular shape, that is, a special-shaped screen. The display screen 150 can be made of materials such as LCD (Liquid Crystal Display), OLED (Organic Light-Emitting Diode, organic light-emitting diode).

[0134] The audio circuit 160 may include a microphone and a speaker. The microphone is used to collect sound waves from the operator and the environment, and convert the sound waves into electrical signals and input them into the processor 110 for processing, or input them into the radio frequency circuit 140 to achieve voice communication. For the purpose of stereo acquisition or noise reduction, there can be multiple microphones, which are respectively arranged in different parts of the electronic device. The microphone can also be an array microphone or an omnidirectional acquisition microphone. The speaker is used to convert the electrical signal from the processor 110 or the radio frequency circuit 140 into sound waves. The speaker can be a traditional film speaker or a piezoelectric ceramic speaker. When the speaker is a piezoelectric ceramic speaker, it can not only convert the electrical signal into sound waves audible to humans, but also convert the electrical signal into sound waves inaudible to humans for purposes such as ranging. In some embodiments, the audio circuit 160 may also include a headphone jack.

[0135] The power supply 170 is used to power various components in the electronic device. The power supply 170 can be an alternating current, a direct current, a disposable battery, or a rechargeable battery. When the power supply 170 includes a rechargeable battery, the rechargeable battery can be a wired rechargeable battery or a wireless rechargeable battery. A wired rechargeable battery is a battery that is charged through a wired line, and a wireless rechargeable battery is a battery that is charged through a wireless coil. The rechargeable battery can also be used to support fast charging technology.

[0136] For a detailed description of the functions and execution processes of each functional module or component in the electronic device embodiment of the present application, reference can be made to the description in the above-mentioned method embodiments of the present application, which will not be repeated here.

[0137] In the several embodiments provided in the present application, it should be understood that the disclosed electronic devices and methods can be implemented in other ways. For example, the various embodiments of the electronic devices described above are only schematic. For example, the division of modules or units is only a logical function division. There may be other division methods in actual implementation, such as multiple units or components can be combined or integrated into another system, or some features can be ignored or not executed. Another point is that the mutual coupling or direct coupling or communication connection shown or discussed can be an indirect coupling or communication connection through some interfaces, devices or units, which can be electrical, mechanical or other forms.

[0138] The units described as separate components may or may not be physically separated, and the components shown as units may or may not be physical units, that is, they may be located in one place or distributed on multiple network units. Some or all of the units may be selected according to actual needs to achieve the purpose of the present embodiment.

[0139] In addition, each functional unit in each embodiment of the present application may be integrated into one processing unit, or each unit may exist physically separately, or two or more units may be integrated into one unit. The above-mentioned integrated unit may be implemented in the form of hardware or in the form of software functional units.

[0140] Based on the inventive concept of the above embodiment, the present application also provides a computer-readable storage medium storing a computer program, which can be executed by a processor to implement the above projection area calculation method. Fig.12 The execution process of the above-mentioned embodiment in a computer-readable storage medium is described.

[0141] like Fig.12As shown, it shows the computer-readable storage medium of the present application. If the above-mentioned integrated unit is implemented in the form of a software functional unit and sold or used as an independent product, it can be stored in a computer-readable storage medium 200. Based on this understanding, the technical solution of the present application is essentially or the part that contributes to the prior art or all or part of the technical solution can be embodied in the form of a software product. The computer software product is stored in a storage medium, including several instructions / computer programs to enable an IoT device (which can be a personal computer, server, or network terminal, etc.) or a processor (processor) to perform all or part of the steps of each implementation method of the present application. The aforementioned storage medium includes: various media such as a USB flash drive, a mobile hard disk, a read-only memory (ROM, Read-Only Memory), a random access memory (RAM, Random Access Memory), a disk or an optical disk, and electronic terminals such as computers, mobile phones, laptops, tablet computers, cameras, etc. having the above-mentioned storage medium.

[0142] The description of the execution process of the program data in the computer-readable storage medium can refer to the description in the above-mentioned method embodiments of the present application, which will not be repeated here.

[0143] The above descriptions are merely embodiments of the present application and are not intended to limit the patent scope of the present application. Any equivalent structure or equivalent process transformation made using the contents of the present application specification and drawings, or directly or indirectly applied in other related technical fields, are also included in the patent protection scope of the present application.

[0144] Those skilled in the art will appreciate that, in the above method of specific implementation, the order in which the steps are written does not imply a strict execution order and does not constitute any limitation on the implementation process. The specific execution order of the steps should be determined by their functions and possible internal logic.

Claims

1. A defect offset distance monitoring system, characterized in that: The system is used in an application site including multiple optical defect monitoring devices and multiple electron beam defect review devices, and the system includes: A defect offset distance database acquisition module is used to acquire and store the defect offset distance value between each electron beam defect review device and each optical defect monitoring device to form a defect offset distance database; a reliability judgment module that is communicatively connected to the defect offset distance database acquisition module, the reliability judgment module performs data processing and analysis based on the defect offset distance database transmitted by the defect offset distance database acquisition module, and judges whether the defect offset distance database has the reliability of the electron beam defect review detection result based on the data processing and analysis results; The defect offset distance correction module is communicatively connected to the reliability judgment module and the defect offset distance database acquisition module respectively, and the defect offset distance correction module obtains a correction value for each defect offset distance value in the defect offset database based on the reliability judgment result of the electron beam defect review detection result transmitted by the reliability judgment module, and transmits the correction value to the defect offset distance database acquisition module to refresh and form a corrected defect offset distance database; wherein, when the reliability judgment result is that it is reliable, the correction value is 0.

2. The defect offset distance monitoring system according to claim 1, characterized in that: The defect offset distance database acquisition module is respectively connected to multiple electron beam defect review devices for communication, and the defect offset distance database acquisition module receives the defect offset distance value between each electron beam defect review device and each optical defect monitoring device transmitted by each electron beam defect review device; wherein each electron beam defect review device is configured to obtain multiple defect offset distance values ​​between the electron beam defect review device and multiple optical defect monitoring devices respectively in the following manner: Using each optical defect detection device as a target optical defect detection device, photographing the defect position on the target object based on a position coordinate of a defect on the target object obtained by the target optical defect detection device, so as to obtain a first image of the target object under each electron beam defect review device; Identify the defect on the target object, and take a photo of the defect position on the target object with the defect as the center position, to obtain a second image of the target object under each electron beam defect review device; Based on the same two-dimensional coordinate system, the coordinates of the center position of the first image of the target object and the coordinates of the center position of the second image of the target object under each electron beam defect review device are obtained; Based on the coordinates of the center position of the first image and the coordinates of the center position of the second image of the target object under each electron beam defect review device, the defect offset distance value between the electron beam defect review device and the target optical defect monitoring device is obtained.

3. The defect offset distance monitoring system according to claim 2, characterized in that: Each of the electron beam defect review devices is further configured to obtain multiple defect offset distance values ​​between the electron beam defect review device and the multiple optical defect monitoring devices respectively in the following manner: Calculate the difference between the coordinates of the center position of the first image of the target object under each electron beam defect review device and the coordinates of the center position of the second image, and use the calculation result as the defect offset distance value between the electron beam defect review device and the target optical defect monitoring device.

4. The defect offset distance monitoring system according to claim 1, characterized in that: The reliability judgment module is configured to process and analyze the defect offset distance database transmitted by the defect offset distance database acquisition module in the following manner: Perform clustering processing on the multiple defect offset distance values between the multiple electron beam defect review devices and the multiple optical defect monitoring devices in the defect offset distance database to obtain a scatter plot corresponding to all the defect offset distance values; Perform normal distribution processing on the scatter plot using the normal distribution method to obtain a normal distribution graph followed by all the points in the scatter plot; Based on the normal distribution graph followed by all the points in the scatter plot, obtain the status of the multiple defect offset distance values between the multiple electron beam defect review devices and the multiple optical defect monitoring devices according to a preset standard.

5. The defect offset distance monitoring system according to claim 4, characterized in that: The reliability judgment module is configured to obtain a scatter plot corresponding to all the defect offset distance values in the following manner: Perform clustering processing on the multiple defect offset distance values between the multiple electron beam defect review devices and the multiple optical defect monitoring devices in the defect offset distance database using a statistical method to obtain a scatter plot corresponding to all the defect offset distance values.

6. The defect offset distance monitoring system according to claim 5, characterized in that: The statistical method is the K-Means clustering method.

7. The defect offset distance monitoring system according to claim 4, characterized in that: The normal distribution graph followed by all the points in the scatter plot includes a mean and a standard deviation, and the reliability judgment module is configured to obtain the status of the multiple defect offset distance values between the multiple electron beam defect review devices and the multiple optical defect monitoring devices in the following manner: The multiple electron beam defect review devices and the multiple optical defect monitoring devices The status of the multiple defect offset distance values between them Among them, defect count represents all the points in the scatter plot, μ is the mean of the normal distribution graph followed by all the points in the scatter plot, σ is the standard deviation of the normal distribution graph followed by all the points in the scatter plot, P(μ - σ < defect count < μ + σ) represents the probability that all the points in the scatter plot fall within the range of the mean μ plus or minus one standard deviation σ, P(μ - 2σ < defect count < μ + 2σ) represents the probability that all the points in the scatter plot fall within the range of the mean μ plus or minus two standard deviations σ, P1 is the first preset threshold, and P2 is the second preset threshold.

8. The defect offset distance monitoring system according to claim 7, characterized in that: P1 is 68.26%, and P2 is 95.44%.

9. The defect offset distance monitoring system according to claim 7, characterized in that: The reliability judgment module is configured to judge whether the defect offset distance database has the reliability of the electron beam defect review detection result in the following manner: If the status of the multiple defect offset distance values between the multiple electron beam defect review devices and the multiple optical defect monitoring devices is healthy, it is determined that the defect offset distance database has the reliability of the electron beam defect review detection result; If the status of multiple defect offset distance values ​​between the multiple electron beam defect review devices and the multiple optical defect monitoring devices is warning or dangerous, it is determined that the defect offset distance database does not have the reliability of electron beam defect review detection results.

10. The defect offset distance monitoring system according to claim 7, characterized in that: The defect offset distance correction module is configured to obtain a correction value of each defect offset distance value in the defect offset database in the following manner: When the status of multiple defect offset distance values ​​between the multiple electron beam defect review devices and the multiple optical defect monitoring devices is warning or dangerous, the defect offset distance value between each electron beam defect review device and each optical defect monitoring device is corrected based on the scatter plot to obtain a corrected value of each defect offset distance value in the defect offset database.

11. The defect offset distance monitoring system according to claim 10, characterized in that: The defect offset distance correction module is further configured to obtain a correction value of each defect offset distance value in the defect offset database in the following manner: A local anomaly factor detection method is used to identify and exclude abnormal points for all points in the scatter plot, and based on the scatter plot after excluding abnormal points, the defect offset distance value between each electron beam defect review device and each optical defect monitoring device is corrected to obtain a corrected value for each defect offset distance value in the defect offset database.

12. The defect offset distance monitoring system according to claim 11, characterized in that: The scatter plot includes a plurality of large clusters and a plurality of small clusters, and the defect offset distance correction module is configured to identify and exclude abnormal points for all points in the scatter plot in the following manner: The abnormality score of each point in the scatter plot is calculated based on all clusters in the scatter plot, and based on the abnormality score values ​​of all points, abnormal points are identified and excluded for all points in the scatter plot according to preset rules.

13. The defect offset distance monitoring system according to claim 12, characterized in that: The defect offset distance correction module is configured to calculate the anomaly score of each point in the scatter plot in the following manner: Wherein, CBLOF(t) represents the abnormal score value of the t-th point in the scatter plot, SC is the set of all small clusters in the scatter plot, LC is the set of all large clusters in the scatter plot, and C i is the ith small cluster in the set SC consisting of all small clusters in the scatter plot or the ith large cluster in the set LC consisting of all large clusters in the scatter plot, C j Represents the large cluster that is closest to the t-th point in the scatter plot.

14. A defect offset distance monitoring method, implemented by the system according to any one of claims 1 to 13, characterized in that: The monitoring method comprises the following steps: Acquire and store the defect offset distance value between each electron beam defect review device and each optical defect monitoring device to form a defect offset distance database; Performing data processing and analysis on the defect offset distance database, and judging whether the defect offset distance database has the reliability of electron beam defect review detection results based on the data processing and analysis results; When the reliability judgment result is that it is not reliable, each defect offset distance value in the defect offset database is corrected; when the reliability judgment result is that it is reliable, the defect offset database is not corrected.

15. A wafer defect detection method, characterized in that: The method is used in an application scenario including multiple optical defect detection devices and multiple electron beam defect review devices, and the method includes: Obtaining a wafer to be inspected; Using the system as described in any one of claims 1 to 13, based on the wafer to be inspected, to obtain a corrected defect offset distance value between each electron beam defect review device and each optical defect monitoring device; Randomly select an electron beam defect review device and an optical defect monitoring device, and adjust a preset defect offset distance value parameter in the electron beam defect inspection device based on the corrected defect offset distance value between the selected electron beam defect review device and the optical defect monitoring device; Defect detection is performed on the wafer to be inspected by using the selected optical defect detection equipment and the electron beam defect review equipment after adjusting the preset defect offset distance value parameters.

16. An electronic device, characterized in that: The method comprises a memory, a processor, and a computer program stored in the memory and executable on the processor, wherein the processor implements the steps of the method according to any one of claims 14 and 15 when executing the computer program.

17. A computer-readable storage medium having program instructions stored thereon, characterized in that: When the program instructions are executed by a processor, the method according to any one of claims 14 and 15 is implemented.

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