Single vacuum chamber wafer proton irradiation device for carrier lifetime control

Abstract

The invention relates to the technical field of chip manufacturing, in particular to a carrier lifetime controlled single vacuum chamber wafer proton irradiation device, which comprises an irradiation vacuum chamber body, and an irradiation vacuum chamber front chamber door is arranged at the left end of the irradiation vacuum chamber body; a wafer storage unit is arranged on the left side of an inner cavity of the circular vacuum irradiation cabin, a beam irradiation unit is arranged on the right side of the inner cavity of the circular vacuum irradiation cabin, and a plurality of wafer trays are stored in the wafer storage unit; an irradiation conveying mechanism is further arranged in the middle of the inner cavity of the irradiation vacuum chamber body and used for moving the wafer trays from the wafer storage unit to the beam irradiation unit and moving the wafer trays back to the wafer storage unit from the beam irradiation unit. The method has the beneficial effects that the service life of a local carrier of the chip can be controlled, the irradiation depth can be accurately controlled, the accuracy can reach + / -1mu m, and the batch, automation, high efficiency and high safety of the irradiation process are realized.

Description

Technical Field

[0001] The invention belongs to the technical field of chip manufacturing, and in particular relates to a single vacuum chamber wafer proton irradiation device with carrier lifetime control. Background Art

[0002] Power devices represented by fast recovery diodes (FRD) and insulated-gate bipolar transistors (IGBT) are widely used in important occasions such as new energy vehicles, photovoltaics, smart grids, rail traction, industrial frequency conversion, etc., and have very important strategic significance and market value. FRD is widely used in power electronics, generally in anti-parallel with IGBT, providing a loop for reactive current in the load, reducing the discharge time of the capacitor, and suppressing the high induced voltage caused by the instantaneous reverse current of the load. In order to match the increasingly faster circuit switching speed and increasingly complex application environment, FRD must meet the requirements of fast switching speed, low static and dynamic loss, short reverse recovery time and good soft recovery characteristics.

[0003] Carrier lifetime control and device structure optimization are key technologies for achieving high-performance FRD. Carrier lifetime control technology is one of the key technologies for reducing reverse recovery time. By introducing deep energy levels in the base region of the device to generate recombination centers, the carrier lifetime is reduced, the total amount of stored charge in the base region during forward conduction is reduced, and the recombination of minority carriers during reverse shutdown is accelerated, thereby reducing the reverse recovery time. Carrier lifetime control technology can be divided into two categories according to the location of the introduced recombination center: global carrier lifetime control technology and local carrier lifetime control technology. Global carrier lifetime control technology, also known as axial uniform lifetime control technology, introduces recombination centers to the entire FRD chip by expanding deep energy level impurities such as gold and platinum and electron irradiation to reduce carrier lifetime. Local carrier lifetime control technology, also known as axial local lifetime control technology, induces defects in a certain depth area of ​​the FRD through high-energy H+ or He++ plasma irradiation, and reduces carrier lifetime in local areas. Light ion irradiation lifetime control technology has the advantages of small forward conduction voltage drop, low reverse leakage current, high softness factor and high temperature stability. It is a key technology for achieving high-performance FRD, but currently only international manufacturers such as IXYS, IFX, Vishay and ABB adopt it. In addition, the existing wafer proton irradiation device has low accuracy in irradiation depth control, making it difficult to achieve precise control of the local carrier lifetime of power devices.

[0004] Therefore, a single vacuum chamber wafer proton irradiation device with carrier lifetime control is proposed, which can realize local carrier lifetime control of the chip and precise control of the irradiation depth with an accuracy of up to ±1um, and realizes the automation of the irradiation process with high efficiency and safety. Summary of the invention

[0005] In view of the above problems, the present invention proposes a single vacuum chamber wafer proton irradiation device with carrier lifetime control. In a vacuum environment, proton irradiation is performed on wafers for manufacturing IGBT or FRD chips, which can realize local carrier lifetime control of power devices and precise control of irradiation depth with an accuracy of up to ±1um. For power devices of different models, accurate control of important parameters such as forward conduction voltage drop, reverse leakage current, and softness factor can be achieved, and batch irradiation under vacuum is realized, thereby automating the irradiation process, causing no harm to operators, and having high safety and efficiency.

[0006] A single vacuum chamber wafer proton irradiation device with carrier lifetime control comprises an irradiation vacuum chamber body, wherein a front chamber door of the irradiation vacuum chamber is arranged at the left end of the irradiation vacuum chamber body; a wafer storage unit is arranged on the left side of the inner cavity of the circular vacuum irradiation chamber body, and a beam irradiation unit is arranged on the right side of the inner cavity, wherein a plurality of wafer trays are stored in the wafer storage unit; an irradiation conveying mechanism is also arranged in the middle of the inner cavity of the irradiation vacuum chamber body, so as to transfer the wafer tray from the wafer storage unit to the beam irradiation unit, and transfer the wafer tray from the beam irradiation unit back to the wafer storage unit.

[0007] The current high-energy ion implanter can only put one wafer in at a time, which is very inefficient. The single vacuum chamber wafer proton irradiation device provided by the present invention can automatically transfer the wafer tray from the wafer storage unit to the beam irradiation unit through the irradiation transmission mechanism, realizing the automation of the irradiation process, and the wafer storage unit stores multiple wafer trays, which can be put into multiple wafers at a time, and can realize batch irradiation under vacuum, greatly improving the efficiency of wafer proton irradiation under vacuum.

[0008] After the single vacuum chamber wafer proton irradiation device is evacuated, proton irradiation of power chip wafers can be achieved in a vacuum environment, reducing the carrier lifetime in a local area. During the irradiation process, the proton beam does not pass through the atmosphere, there is no beam energy loss, no beam scattering, and no activation of the atmosphere. Using a single vacuum chamber wafer proton irradiation device to perform proton irradiation under vacuum, this solution can achieve precise control of the irradiation depth, with an accuracy of up to ±1um.

[0009] Furthermore, the irradiation conveying mechanism includes a wafer tray pull rod, and the wafer tray pull rod is installed inside the irradiation vacuum chamber body so as to be movable left and right; the wafer storage unit includes a lifting frame, a wafer tray grid frame, and a wafer tray array; the lifting frame is arranged on the left side of the inner cavity of the irradiation vacuum chamber body, and the wafer tray grid frame is installed on the lifting frame;

[0010] The wafer tray array is detachably mounted on the wafer tray grid frame; a plurality of wafer trays are placed layer by layer on the wafer tray array; the wafer storage unit is provided with an irradiation preparation position, and the wafer trays on the wafer tray array can be moved to the irradiation preparation position one by one during the process of the lifting frame rising or falling layer by layer;

[0011] When the wafer tray pull rod moves to the wafer storage unit, the wafer tray pull rod can pull out the wafer tray located at the irradiation preparation position and move it to the right to the beam irradiation unit.

[0012] Furthermore, the beam irradiation unit includes a two-dimensional mobile platform and a beam irradiation system; the two-dimensional mobile platform includes an X-axis mobile platform and a Y-axis mobile platform; and the two-dimensional mobile platform is installed on a bracket in the vacuum chamber, and the bracket in the vacuum chamber can be adjusted up and down and installed in the irradiation vacuum chamber. The two-dimensional mobile platform in the irradiation chamber has the function of uniform movement in both X / Y directions, which can achieve uniform irradiation of the wafer and improve the irradiation quality.

[0013] In a preferred embodiment of the present scheme, the beam irradiation system includes a beam irradiation pipeline, a rotating Faraday cage, and an adjustable beam aperture which are sequentially arranged along the beam injection direction.

[0014] In a preferred embodiment of the present solution, the irradiation vacuum chamber body is connected to four molecular pumps.

[0015] Further preferably, the pumping speed of the molecular pump is 4200 L / S.

[0016] In a preferred embodiment of the present invention, the irradiation vacuum chamber body is a steel cylindrical structure. The single vacuum chamber wafer proton irradiation device achieves isolation between the operator and the radiation source, which can significantly reduce the ionizing radiation dose received by the operator.

[0017] In a preferred embodiment of the present scheme, a front door observation camera and a front door peep window are provided on the front door of the irradiation vacuum chamber.

[0018] Furthermore, a grid position observation camera is provided on the top of the irradiation vacuum chamber body to monitor the position of the grid frame of the wafer tray.

[0019] Furthermore, the irradiation vacuum chamber body is also connected to an initial vacuum pump group. In the initial stage of vacuuming, the vacuum pump group is used to adjust the vacuum degree in the irradiation vacuum chamber body to the order of 10-2 mbarr.

[0020] Beneficial effects of the present invention:

[0021] (1) The structure of the single vacuum chamber wafer proton irradiation device is mainly divided into a wafer storage unit and an irradiation conveying mechanism. The irradiation conveying mechanism can transfer the wafer tray from the wafer storage unit to the beam irradiation unit, and transfer the wafer tray from the beam irradiation unit back to the wafer storage unit, thereby realizing the automation of the irradiation process, with high irradiation efficiency, and without the need for frequent operations by operators, which is conducive to ensuring the safety of operators;

[0022] (2) Multiple wafer trays are placed layer by layer on a wafer tray grid frame to form a wafer tray array, so that the array grid frame can hold multiple 4-inch wafers at a time. This solution can achieve batch irradiation under vacuum with high efficiency and large capacity.

[0023] (3) The wafer irradiation process is always carried out in a vacuum state, which reduces beam loss and ensures beam quality, which is conducive to accurately controlling the irradiation depth of the wafer, thereby achieving accurate control of the local carrier lifetime of the chip; and the control accuracy of the irradiation depth of this scheme can reach ±1um. For different types of power devices, it can achieve accurate control of important parameters such as forward conduction voltage drop, reverse leakage current, and softness factor;

[0024] (4) The overall structure of the single vacuum chamber wafer proton irradiation device is a steel cylinder structure. During the wafer irradiation process, the beam is always in the cylinder. The steel cylinder can effectively shield the residual radiation dose, which is beneficial to reduce the radiation damage to production personnel. It is particularly suitable for lower energy proton irradiation and can achieve 1MeV-2.5MeV wafer proton irradiation;

[0025] (5) The single vacuum chamber wafer proton irradiation device of this scheme realizes the movement of the wafer tray through the wafer tray pull rod, and realizes the position change of the wafer through the grid lifting drive motor; and realizes the precise adjustment of the horizontal position and vertical height position of the wafer to be inspected through the two-dimensional mobile platform. Therefore, in the process of mass production of this scheme, the performance of key links of proton irradiation such as wafer loading efficiency and irradiation uniformity control are greatly improved.

[0026] Other features and advantages of the present invention will be described in the following description, and partly become obvious from the description, or be understood by practicing the present invention. The purpose and other advantages of the present invention can be realized and obtained by the structures pointed out in the description and the drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the following briefly introduces the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0028] Figure 1 A schematic diagram of a single vacuum chamber wafer proton irradiation device of the present invention is shown;

[0029] Figure 2 A cross-sectional view of a single vacuum chamber wafer proton irradiation device of the present invention is shown;

[0030] In the figure: 1-front hatch door of irradiation vacuum chamber, 2-front hatch door observation camera, 3-front hatch door peep window, 4-lifting frame, 5-wafer tray grid frame, 6-wafer tray array, 7-top tray grid position sensor, 8-irradiation vacuum chamber body, 9-high and low vacuum gauges, 10-beam inlet gate valve, 11-beam irradiation pipeline, 12-rotating Faraday cup, 13-clean nitrogen filling port, 14-rear hatch door observation camera, 15-irradiation vacuum chamber rear hatch door, 16-rear hatch door peep window, 17-adjustable beam aperture, 18-wafer tray pull rod, 19-two-dimensional moving platform, 22-irradiation vacuum chamber adjustable bracket, 23-grid lifting drive motor, 26-molecular pump, 27-grid position observation camera. DETAILED DESCRIPTION

[0031] In order to make the purpose, technical solution and advantages of the embodiments of the present invention clearer, the technical solution in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0032] It should be noted that the terms "first", "second" etc. in the present application are used to distinguish similar objects, and are not necessarily used to describe a specific order or sequential order. It should be understood that the data used in this way can be interchanged in appropriate circumstances, so that the embodiments of the present application described here. In the present application, the orientation or positional relationship indicated by the terms "upper", "lower", "left", "right", "front", "back", "top", "bottom", "inside", "outside", "middle", "vertical", "horizontal", "lateral", "longitudinal" etc. are based on the orientation or positional relationship shown in the accompanying drawings.

[0033] like Figure 1 and Figure 2As shown, a single vacuum chamber wafer proton irradiation device is a steel cylindrical structure. During use, the interior of the device is a vacuum environment; thus, the wafer irradiation process is always carried out in a vacuum state, reducing beam loss and facilitating accurate control of the irradiation depth of the wafer.

[0034] refer to Figure 1 As shown, in this scheme, the irradiation vacuum chamber body 8 is installed on the adjustable bracket 22 of the irradiation vacuum chamber, and a wafer storage unit is provided inside the irradiation vacuum chamber body 8 to store wafers, and a beam irradiation unit is provided to irradiate the wafers; at the same time, an irradiation transmission mechanism is also provided inside the irradiation vacuum chamber body 8 to move the wafers from the wafer storage unit to the beam irradiation unit, or to move the wafers from the beam irradiation unit back to the wafer storage unit.

[0035] Meanwhile, in this embodiment, the irradiation vacuum chamber body 8 is connected to four molecular pumps 26 to maintain a high vacuum state in the irradiation vacuum chamber body 8 during the operation of the equipment.

[0036] To be more specific, in the present solution, the wafer storage unit is arranged on the left side of the inner cavity of the irradiation vacuum chamber body 8, and includes a lifting frame 4 installed on the left side of the inner cavity of the irradiation vacuum chamber body 8, a wafer tray grid frame 5 is installed on the lifting frame 4, a wafer tray array 6 is installed on the wafer tray grid frame 5, and a grid lifting drive motor 23 is connected to the top of the lifting frame 4, so that the wafer tray grid frame 5 can be driven by the grid lifting drive motor 23 to achieve lifting.

[0037] Furthermore, in the present solution, the wafer tray array 6 is a multi-layer array frame structure, with a total of 30 layers, and each layer can hold one wafer tray. The wafer tray array 6 can be detachably mounted on the wafer tray grid frame 5, so that the wafer tray array 6 can be taken out as a whole and the wafer tray can be loaded and unloaded externally.

[0038] In this embodiment, a two-dimensional moving platform and a beam irradiation system are installed on the right side of the inner cavity of the irradiation vacuum chamber body 8 to form a beam irradiation unit.

[0039] The two-dimensional moving platform 19 is composed of an X-direction moving platform and a Y-direction moving platform, and the two-dimensional moving platform 19 is installed inside the irradiation vacuum chamber body 8 via a vacuum chamber bracket 20; the horizontal position, vertical height position, etc. can be accurately adjusted through the X-direction moving platform and the Y-direction moving platform. The beam irradiation system is composed of a series of components and devices arranged along the beam injection direction. Specifically, the series of components are composed of a beam irradiation pipeline 11, a rotating Faraday cage 12, an adjustable beam aperture 17, etc. from top to bottom.

[0040] In this embodiment, the irradiation conveying mechanism includes a wafer tray pull rod 18, and the wafer storage unit is provided with an irradiation preparation position corresponding to the setting height of the tray pull rod 18. During the process of the lifting frame 4 rising or falling layer by layer, the wafer trays on the wafer tray array 6 can be moved one by one to the irradiation preparation position; when the wafer tray pull rod 18 moves to the wafer storage unit, the wafer tray pull rod 18 can pull out the wafer tray located at the irradiation preparation position and move it to the right to the beam irradiation unit.

[0041] In this embodiment, before irradiation, the wafer tray array 6 filled with wafer trays is pushed into the irradiation vacuum chamber body 8 as a whole and fixed in the wafer tray grid frame 5. At the beginning of irradiation, the wafer tray grid frame 5 and the wafer tray array 6 are both in Figure 1 During the irradiation process, the wafer tray pull rod 18 pulls out the first wafer tray located at the irradiation preparation position, and after the irradiation is completed, the wafer tray is returned to the wafer tray array 6 via the wafer tray pull rod 18 .

[0042] Because some gamma rays and neutron rays will be generated during the proton beam or heavy ion beam irradiation process, the operator cannot operate and observe the irradiation process at close range. In this solution, the irradiation process is automated through the cooperation of the irradiation transmission mechanism, the wafer storage unit and the beam irradiation unit. The wafer vacuum irradiation chamber is all located in the shielded room, and the operators are located outside the shielded room. The ionizing radiation rays generated during the irradiation process will not cause harm to personnel.

[0043] refer to Figure 1 , Figure 2 As shown, further, in the present scheme, the left end of the irradiation vacuum chamber body 8 is the irradiation vacuum chamber front door 1, on which the irradiation vacuum chamber front door 1 is installed a front door observation camera 2 and a front door peep window 3; the front door observation camera 2 can remotely observe the beam irradiation process.

[0044] During the equipment debugging and production stage, since the vacuum chamber is loaded with irradiated wafers, the front door 1 of the irradiation vacuum chamber needs to be opened frequently, and the interior of the vacuum chamber is frequently exposed to the atmosphere. After each wafer is placed, the irradiation vacuum chamber body 8 needs to be quickly evacuated from the atmospheric state to a high vacuum state, and the vacuum degree should generally reach 5×10E-7mbarr; from the perspective of improving production efficiency, the establishment time of this high vacuum state should be controlled within 45 minutes. Therefore, the irradiation vacuum chamber body 8 needs to be equipped with a strong exhaust capacity. In the single vacuum chamber wafer proton irradiation device, the irradiation vacuum chamber body 8 uses 4 large-speed molecular pumps 26. The molecular pump 26 has a pumping speed of 4200L / S, which can evacuate the irradiation vacuum chamber body 8 from the atmospheric state to a high vacuum state within 45 minutes.

[0045] Furthermore, in the present solution, a top tray grid position sensor 7 is also provided on the top of the irradiation vacuum chamber body 8 to detect the position of the wafer tray grid frame 5 .

[0046] refer to Figure 1 As shown, in this example, the right end of the irradiation vacuum chamber body 8 is also provided with an irradiation vacuum chamber rear door 15, a rear door observation camera 14, and a rear door peep window 16.

[0047] Further, refer to Figure 2 As shown, in this solution, a grid position observation camera 27 is also provided to monitor the position status of the wafer tray grid frame 5.

[0048] In this embodiment, a high and low vacuum gauge 9 is further provided on the top of the irradiation vacuum chamber body 8 .

[0049] Normal irradiation workflow of single vacuum chamber wafer proton irradiation device:

[0050] S1. Close the beam inlet gate valve 10 to ensure that the irradiation vacuum chamber body 8 is isolated from the beam pipeline;

[0051] S2. Ensure that the four high-speed molecular pumps 26 and the corresponding vacuum isolation valves are in the closed state, and open the clean nitrogen filling port 13 to introduce dry nitrogen into the irradiation vacuum chamber 8;

[0052] S3. Confirm that the nitrogen pressure in the irradiation vacuum chamber 8 is equal to the atmospheric pressure, and close the clean nitrogen filling port 13;

[0053] S4. Manually unlock and open the front door 1 of the irradiation vacuum chamber, open the front door 1 of the irradiation vacuum chamber to a 120-degree position, and lock the front door 1 of the irradiation vacuum chamber to prevent it from swinging;

[0054] S5. Manually place the wafer trays containing the wafers into the wafer tray array 6 in the wafer tray grid frame 5, one by one, and lock the trays to prevent them from moving;

[0055] S6. After all trays are placed in the wafer tray array 6, the grid lifting drive motor 23 is started to move the wafer tray grid frame 5 up and down to check whether the tray is placed in the appropriate position. If the tray is confirmed to be placed correctly, the upper and lower positions of the wafer tray array 6 are returned to zero;

[0056] S7. Close the front door 1 of the irradiation vacuum chamber and lock it;

[0057] S8. Start the grid lifting drive motor 23 again, and check whether the wafer tray grid frame 5 is used normally up and down through the front door peep window 3. If it can move normally, move it up and down again to return the position of the wafer tray array 6 to zero;

[0058] S9. After checking and confirming that the front door 1 of the irradiation vacuum chamber is closed again, start the initial vacuum pump group and start vacuuming;

[0059] S10. After the vacuum degree of the irradiation vacuum chamber 8 reaches the level of 10-2 mbarr, four high-speed molecular pumps 26 are started;

[0060] S11. After the vacuum degree of the irradiation vacuum chamber body 8 reaches 5×10E-7 mbarr, check and confirm the vacuum degree of the beam pipeline. If the vacuum degree of the beam pipeline is at the level of 10-7 mbarr, open the beam inlet gate valve 10 to connect the irradiation vacuum chamber body 8 with the beam pipeline;

[0061] S12. Start the wafer tray pull rod 18 to pull the first wafer from the irradiation preparation position of the wafer tray array 6 to the two-dimensional moving platform 19;

[0062] S13. The wafer tray pull rod 18 is retracted, and the two-dimensional mobile platform 19 is started to move the wafer tray to the irradiation preparation position;

[0063] S14. Determine that the rotating Faraday cage 12 is in the beam measurement position;

[0064] S15. Open the Faraday cage in the beam pipe, introduce the proton beam into the irradiation vacuum chamber 8, and use the rotating Faraday cage 12 to receive the beam and measure the beam intensity;

[0065] S16. After confirming that the beam-related parameters are correct, the rotating Faraday cage 12 is moved to the non-beam measurement position, and the beam passes through the adjustable beam aperture 17 below and is irradiated on the wafer;

[0066] S17. The two-dimensional mobile platform 19 is started, and moves in the X and Y directions respectively at the set moving speed to complete the wafer irradiation;

[0067] S18. After the wafer irradiation is completed, the two-dimensional moving platform 19 returns to the initial zero position;

[0068] S19. The wafer tray pull rod 18 is activated to push the irradiated wafer tray back to the wafer tray array 6;

[0069] S20. Start the grid lifting drive motor 23 to move the wafer tray grid frame 5 upward to ensure that the second row of wafer trays in the wafer tray array 6 is in the irradiation preparation position;

[0070] S21 starts the wafer tray pull rod 18 to pull the second wafer from the wafer tray array 6 to the two-dimensional moving platform 19;

[0071] S22. The wafer tray pull rod 18 is retracted, and the two-dimensional moving platform 19 is started to move the wafer tray to the irradiation starting zero position;

[0072] S23. Repeat steps 14-22 to complete the irradiation of all wafers;

[0073] S24. After all wafers are irradiated, the grid frame 5 of the wafer tray is moved down to the initial position by using the grid lifting drive motor 23, and other related devices are returned to the initial position;

[0074] S25. Close the beam inlet gate valve 10;

[0075] S26. Close the four high-speed molecular pumps 26 and the corresponding vacuum valves, open the clean nitrogen filling port 13, and introduce dry nitrogen into the irradiation vacuum chamber 8;

[0076] S27. Confirm that the nitrogen pressure in the irradiation vacuum chamber 8 is equal to the atmospheric pressure, and close the clean nitrogen filling port 13;

[0077] S28. Manually unlock and open the front door 1 of the irradiation vacuum chamber, open the front door 1 of the irradiation vacuum chamber to a 120-degree position, and lock the front door 1 of the irradiation vacuum chamber to prevent it from swinging;

[0078] S29. Take out all irradiated wafer trays in the wafer tray array 6 one by one;

[0079] S30. Place a new batch of trays loaded with wafers to be irradiated;

[0080] S31. Repeat steps S6 to S24 to complete the irradiation of a new batch of wafers;

[0081] S32. After all wafers are irradiated, close the beam inlet gate valve 10, close the vacuum valves of the four high-speed molecular pumps 26, and close the four high-speed molecular pumps 26;

[0082] S33. Dry nitrogen is introduced into the irradiation vacuum chamber 8;

[0083] S34. Turn off all control system equipment and enter shutdown state.

[0084] In the present invention, the wafer tray pull rod 18 pulls the tray to move, which is a common pick-and-place mechanism in the mechanical field and is not elaborated in detail in this embodiment.

[0085] Although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or make equivalent substitutions for some of the technical features therein; and these modifications or substitutions do not make the essence of the corresponding technical solutions deviate from the spirit and scope of the technical solutions of the embodiments of the present invention.

Claims

1. A single vacuum chamber wafer proton irradiation device with carrier lifetime control, characterized in that: include: An irradiation vacuum chamber body (8), wherein a irradiation vacuum chamber front door (1) is provided at the left end of the irradiation vacuum chamber body (8); The left side of the inner cavity of the irradiation vacuum chamber body (8) is provided with a wafer storage unit, and the right side of the inner cavity is provided with a beam irradiation unit, and a plurality of wafer trays are stored in the wafer storage unit; An irradiation transfer mechanism is also provided in the middle of the inner cavity of the irradiation vacuum chamber body (8) for transferring the wafer tray from the wafer storage unit to the beam irradiation unit, and transferring the wafer tray from the beam irradiation unit back to the wafer storage unit.

2. The single vacuum chamber wafer proton irradiation device according to claim 1, characterized in that: The irradiation conveying mechanism comprises a wafer tray pull rod (18), and the wafer tray pull rod (18) is installed inside the irradiation vacuum chamber body (8) so as to be movable leftward and rightward; The wafer storage unit comprises a lifting frame (4), a wafer tray grid frame (5), and a wafer tray array (6); The lifting frame (4) is arranged on the left side of the inner cavity of the irradiation vacuum chamber body (8), and the wafer tray grid frame (5) is installed on the lifting frame (4); The wafer tray array (6) is detachably mounted on the wafer tray grid frame (5); The wafer tray array (6) has a plurality of wafer trays placed in layers up and down; The wafer storage unit is provided with an irradiation preparation position, and when the lifting frame (4) is raised or lowered layer by layer, the wafer trays on the wafer tray array (6) can be moved one by one to the irradiation preparation position; When the wafer tray pull rod (18) moves to the wafer storage unit, the wafer tray pull rod (18) can pull out the wafer tray located at the irradiation preparation position and move it to the right to the beam irradiation unit.

3. The single vacuum chamber wafer proton irradiation device according to claim 2, characterized in that: The beam irradiation unit comprises a two-dimensional moving platform (19) and a beam irradiation system; The two-dimensional mobile platform (19) includes an X-direction mobile platform and a Y-direction mobile platform; The two-dimensional moving platform (19) is installed on a vacuum chamber bracket (20), and the vacuum chamber bracket (20) is installed in the irradiation vacuum chamber body (8) in an adjustable manner up and down.

4. The single vacuum chamber wafer proton irradiation device according to claim 3, characterized in that: The beam irradiation system comprises a beam irradiation pipeline (11), a rotating Faraday cage (12), and an adjustable beam aperture (17) which are sequentially arranged along the beam injection direction.

5. The single vacuum chamber wafer proton irradiation device according to claim 3, characterized in that: The irradiation vacuum chamber body (8) is connected to four molecular pumps (26).

6. The single vacuum chamber wafer proton irradiation device according to claim 5, characterized in that: The pumping speed of the molecular pump (26) is 4200 L / S.

7. The single vacuum chamber wafer proton irradiation device according to any one of claims 1 to 6, characterized in that: The irradiation vacuum chamber body (8) is a steel cylindrical structure.

8. The single vacuum chamber wafer proton irradiation device according to claim 7, characterized in that: The front door (1) of the irradiation vacuum chamber is provided with a front door observation camera (2) and a front door peep window (3).

9. The single vacuum chamber wafer proton irradiation device according to claim 8, characterized in that: A grid position observation camera (27) is also provided on the top of the irradiation vacuum chamber body (8).

10. The single vacuum chamber wafer proton irradiation device according to claim 9, characterized in that: The irradiation vacuum chamber body (8) is also connected to a primary vacuum pump set.

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