Heat insulation device, atomic layer deposition equipment and preparation method of heat insulation device
By setting up a heat insulation device on the chamber door of the atomic layer deposition equipment, the problem of heat loss in the outer wall of the reaction chamber is solved, and higher deposition quality and operational safety are achieved.
Patent Information
- Application Number
- CN202411548233.5
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-10-31
- Publication Date
- 2025-03-07
AI Technical Summary
During the atomic layer deposition process, the metal material on the outer wall of the reaction chamber causes heat loss at high temperatures, affecting the deposition quality and operational safety.
A heat insulation device is designed, including a substrate, a heat insulation layer, a protective layer and a handle sleeve. By setting the heat insulation device on the chamber door of the atomic layer deposition device, heat transfer is prevented from outward and the reaction chamber temperature is kept stable.
Effectively reduce heat transfer, improve deposition quality, enhance operational safety, reduce scald risk, and improve the energy efficiency of the equipment.
Smart Images
Figure CN119571289A_ABST
Abstract
Description
Technical Field
[0001] The present invention relates to the technical field of atomic layer deposition, and in particular to a heat insulation device, atomic layer deposition equipment and a method for preparing the heat insulation device. Background Art
[0002] Atomic layer deposition (ALD), also known as atomic layer epitaxy (ALE) or atomic layer chemical vapor deposition (ALCVD). Atomic layer deposition was first proposed by Finnish scientists in 1974. It has the advantages of single atomic layer deposition, extremely uniform thickness of the deposited layer, and high three-dimensional conformality. It has become a key link in the development of advanced semiconductor process technology. In the atomic layer deposition process, the chemical reaction of the new atomic layer is directly related to the previous layer. Atomic layer deposition forms a deposited film by alternately passing two or more gas-phase precursor sources into the reactor and performing chemical adsorption reactions on the surface of the deposition substrate. The chemical bonds are used to alternately adsorb substances A and B to achieve surface reaction growth. The appropriate process temperature can hinder the physical adsorption of molecules on the surface. Atomic layer deposition has the characteristics of self-limitation, that is, in each pulse cycle, the gas-phase precursor can only react at the atomic bonding site on the surface of the deposition substrate, and just cover the village surface with a saturated amount, and can grow repeatedly atomically layer by atomic layer in a very wide process window.
[0003] During the atomic layer deposition process, the reaction chamber needs to maintain a specific temperature and vacuum environment to ensure the quality and uniformity of thin film deposition. Most of the outer walls of the reaction chamber of current atomic layer deposition equipment are made of metal materials. During experiments, the high temperature inside the equipment chamber will cause the temperature of the outer wall of the chamber to rise, which may cause burns during the opening and closing of the chamber. At the same time, the heat generated by the heating device is dissipated from the outer wall of the chamber, which will affect the heating efficiency and reduce the deposition quality. Summary of the invention
[0004] The purpose of the present invention is to provide a thermal insulation device, an atomic layer deposition device and a method for preparing the thermal insulation device, which are used to reduce heat transfer, thereby reducing energy consumption, maintaining a stable temperature inside the reaction chamber, improving deposition quality, and at the same time improving operational safety and reducing the risk of scalding.
[0005] In order to achieve the above object, the present invention provides the following technical solutions:
[0006] A heat insulation device, comprising:
[0007] A substrate, wherein a through hole is provided on the substrate, the through hole is used to pass through a handle of a chamber door of an atomic layer deposition device, and the substrate is used to cover the chamber door;
[0008] A heat insulation layer, the heat insulation layer is fixedly arranged on one side of the base plate, and the heat insulation layer is used to contact with the chamber door;
[0009] A protective layer covering the outer surface of the substrate and the heat insulating layer and exposing the through hole;
[0010] The handle cover is fixedly connected to the protective layer at the through hole, and the handle cover is located on a side of the base plate opposite to the heat insulation layer. The handle cover is used to cover the handle of the chamber door.
[0011] Compared with the prior art, when the heat insulation device provided by the present invention is used to isolate heat during atomic layer deposition, the heat insulation device is set on the chamber door of the atomic layer deposition equipment to achieve the effect of isolating heat. The heat insulation device covers the chamber door to provide basic support for the entire device; the heat insulation layer is fixed on the side of the substrate in contact with the chamber door, which can effectively prevent the heat in the chamber from transferring to the outside, and is the core part of achieving heat insulation, reducing heat loss and maintaining the temperature of the reaction chamber stable; the protective layer is fixed on the side of the heat insulation layer away from the substrate and covers the outer surface of the substrate, protecting the heat insulation layer and the substrate from external erosion, assisting in heat insulation and sealing, and enhancing the performance and life of the device; the handle cover is fixedly connected to the protective layer, and the structural strength is mainly strengthened at the handle to prevent heat leakage due to external force, and to ensure the integrity of the device under frequent operation. Thereby, the entire heat insulation device can effectively reduce heat transfer, maintain the temperature inside the reaction chamber stable, improve deposition quality, and at the same time improve operational safety and reduce the risk of scalding.
[0012] Optionally, in the above-mentioned thermal insulation device, the thermal insulation layer is an aerogel layer, the aerogel layer is bonded to one side of the substrate, and the aerogel layer is used to contact the chamber door.
[0013] Optionally, in the above-mentioned insulation device, the handle cover includes a first layer, a filling layer and a second layer arranged in sequence from the insulation layer to the substrate: the first layer and the second layer are both fixedly connected to the protective layer; the filling layer is used to enhance the structural strength of the handle cover.
[0014] Optionally, in the above-mentioned thermal insulation device, the materials of the first layer and the second layer include polyimide, polyetheretherketone or polytetrafluoroethylene.
[0015] Optionally, in the above-mentioned thermal insulation device, the material of the filling layer includes ceramic fiber cloth, glass fiber cloth or carbon fiber cloth.
[0016] Optionally, in the above-mentioned thermal insulation device, the material of the protective layer includes polyimide, polyetheretherketone or polytetrafluoroethylene.
[0017] Optionally, in the above-mentioned thermal insulation device, the material of the substrate includes polyimide, polyetheretherketone or polytetrafluoroethylene.
[0018] Optionally, in the above-mentioned heat insulation device, four peripheral edges of the substrate are bent toward the same surface of the substrate to form a groove-shaped structure, and the groove-shaped structure is used to cover the chamber door.
[0019] An atomic layer deposition device, comprising:
[0020] The atomic layer deposition equipment body includes a reaction chamber and a chamber door disposed on the top of the reaction chamber, and a handle is disposed on the chamber door;
[0021] The heat insulation device according to any one of claims 1 to 8 is used to cover the chamber door to reduce heat exchange between the reaction chamber and the outside.
[0022] Compared with the prior art, the beneficial effects of the atomic layer deposition equipment are the same as those of the above-mentioned thermal insulation device, which will not be elaborated here.
[0023] A method for preparing a heat insulation device, comprising:
[0024] A substrate is provided with a through hole; the through hole is used for passing a handle of an atomic layer deposition device;
[0025] A heat insulating layer is provided on one side of the substrate, and the heat insulating layer is used to contact with a chamber door of an atomic layer deposition device;
[0026] A protective layer is provided on the outer surface of the heat insulating layer and the substrate, and the through hole is exposed;
[0027] A handle cover fixedly connected to the protective layer is provided, and the handle cover is located on a side of the base plate opposite to the heat insulation layer; the handle cover is used to cover the handle of the chamber door.
[0028] Compared with the prior art, the beneficial effects of the preparation method of the thermal insulation device are the same as the beneficial effects of the above-mentioned thermal insulation device, which will not be described in detail here. BRIEF DESCRIPTION OF THE DRAWINGS
[0029] The drawings described herein are used to provide a further understanding of the present invention and constitute a part of the present invention. The exemplary embodiments of the present invention and their descriptions are used to explain the present invention and do not constitute an improper limitation of the present invention. In the drawings:
[0030] Figure 1 A three-dimensional schematic diagram of a heat insulation device provided by an embodiment of the present invention;
[0031] Figure 2 A front schematic diagram of a heat insulation device provided in an embodiment of the present invention.
[0032] Reference numerals:
[0033] 1 is a substrate, 2 is a heat insulating layer, 3 is a protective layer, 4 is a handle cover, 41 is a first layer, 42 is a filling layer, and 43 is a second layer. DETAILED DESCRIPTION
[0034] In order to make the technical problems, technical solutions and beneficial effects to be solved by the present invention more clearly understood, the present invention is further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention and are not intended to limit the present invention.
[0035] It should be noted that when an element is referred to as being "fixed to" or "disposed on" another element, it can be directly on the other element or indirectly on the other element. When an element is referred to as being "connected to" another element, it can be directly connected to the other element or indirectly connected to the other element.
[0036] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include one or more of the features. In the description of the present invention, the meaning of "multiple" is two or more, unless otherwise clearly and specifically defined. The meaning of "several" is one or more, unless otherwise clearly and specifically defined.
[0037] In the description of the present invention, it is necessary to understand that the directions or positional relationships indicated by the terms "up", "down", "front", "back", "left", "right", etc. are based on the directions or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific direction, be constructed and operated in a specific direction, and therefore cannot be understood as a limitation on the present invention.
[0038] In the description of the present invention, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.
[0039] See also Figure 1An embodiment of the present invention provides a thermal insulation device, comprising: a substrate 1, a thermal insulation layer 2, a protective layer 3 and a handle cover 4, wherein the substrate 1 is provided with a through hole, the through hole is used to pass the handle of the chamber door of the atomic layer deposition equipment, and the substrate 1 is used to cover the chamber door; the thermal insulation layer 2 is fixedly arranged on one side of the substrate 1, and the thermal insulation layer 2 is used to contact the chamber door; the protective layer 3 covers the outer surface of the substrate 1 and the thermal insulation layer 2, and exposes the through hole; the handle cover 4 is fixedly connected to the protective layer 3 at the through hole, the handle cover 4 is located on the side of the substrate 1 opposite to the thermal insulation layer 2, and the handle cover 4 is used to cover the handle of the chamber door.
[0040] During specific implementation: when the heat insulation device for atomic layer deposition equipment provided by the present invention is used to isolate heat during atomic layer deposition, the heat insulation device is set on the chamber door of the atomic layer deposition equipment. A through hole is opened on the substrate 1 for the chamber door handle to pass through, which is used to cover the chamber door. The substrate 1 provides basic support for the entire device; the heat insulation layer 2 is fixed on the side of the substrate 1 that contacts the chamber door, which can effectively prevent the heat in the chamber from being transferred to the outside, and is the core part for achieving heat insulation, reducing heat loss and maintaining the temperature of the reaction chamber stable; the protective layer 3 is fixed on the side of the heat insulation layer 2 away from the substrate 1 and covers the outer surface of the substrate 1, protecting the heat insulation layer 2 and the substrate 1 from external erosion, assisting in heat insulation and sealing, and enhancing the performance and life of the device; the handle cover 4 is fixedly connected to the protective layer 3, and the structural strength is mainly strengthened at the handle to prevent heat leakage due to external force, and to ensure the integrity of the device under frequent operation. Thereby, the entire heat insulation device can effectively reduce heat transfer, maintain the temperature inside the reaction chamber stable, improve deposition quality, and at the same time improve operational safety and reduce the risk of scalding.
[0041] As a possible implementation, Figure 2As shown, the thermal insulation layer 2 is an aerogel layer, which is bonded to one side of the substrate 1, and the aerogel layer is used to contact the chamber door of the atomic layer deposition device. The aerogel layer is fixed to one side of the substrate 1 by bonding as the thermal insulation layer 2. This connection method ensures the close connection between the aerogel layer and the substrate 1, so that heat can be effectively transferred from the chamber door to the aerogel layer without obvious heat leakage at the connection between the two. The substrate 1, as the basic structure for carrying the aerogel layer, provides a support and fixed platform for the aerogel layer, and is also convenient for assembly with other components (such as the protective layer 3 and the handle cover 4). This assembly relationship between the aerogel layer and the substrate 1 forms the core insulation part of the thermal insulation device, laying the foundation for the subsequent thermal insulation function. The working principle is: when the atomic layer deposition equipment is running, high temperature will be generated inside the reaction chamber, and the high temperature will conduct heat outward along the chamber door. The aerogel layer can effectively block the conduction of heat due to its extremely low thermal conductivity. When heat is transferred from the chamber door to the aerogel layer, the nanoporous structure in the aerogel layer will restrict the movement of gas molecules, thereby greatly reducing the transfer of heat. At the same time, the aerogel layer is in direct contact with the chamber door, which can absorb and block the heat emitted by the chamber door to the greatest extent, significantly reducing the heat transferred to the other side of the substrate 1 and the external environment. This working principle enables the aerogel layer to play a key role in the thermal insulation device, ensuring that the heat in the equipment chamber can be effectively controlled and reducing the loss of heat to the outside, thereby helping to maintain the stability of the temperature in the chamber and improve the quality of atomic layer deposition.
[0042] As a possible implementation, Figure 2 As shown, the handle cover 4 includes a first layer 41, a filling layer 42 and a second layer 43 arranged in sequence from the insulation layer 2 to the substrate 1: the first layer 41 and the second layer 43 are both fixedly connected to the protective layer 3; the filling layer 42 is used to enhance the structural strength of the handle cover 4.
[0043] That is, the first layer 41 is fixedly connected to the protective layer 3, located on the side opposite to the substrate 1 and the thermal insulation layer 2 and covered on the through hole. During the manufacturing process, the first layer 41 is tightly attached to the protective layer 3 by a high-temperature resistant adhesive or other suitable connection method to ensure that the first layer 41 will not easily fall off or shift during use; the second layer 43 is also fixedly connected to the protective layer 3 and is arranged on the side of the first layer 41 away from the through hole, which means that there is a certain space gap between the second layer 43 and the first layer 41, thereby forming a cavity; the filling layer 42 is filled in the cavity between the first layer 41 and the second layer 43. During the manufacturing process, a suitable filling material is cut or selected according to the size of the cavity and filled into the cavity so that the filling layer 42 can be tightly filled between the first layer 41 and the second layer 43, or, a suitable filling material is selected and the filling material is wrapped and bonded using the first layer 41 or the second layer 43 to enhance the structural strength. The filling layer 42, the first layer 41, the second layer 43 and the protective layer 3 together form a complete handle cover 4 structure. Through this assembly method, the handle cover 4 can be specifically strengthened for the special part of the chamber door handle without affecting other functions of the insulation device.
[0044] The working principle and beneficial effect are as follows: the heat insulation device is buckled on the chamber door to ensure that the heat insulation device completely covers the surface of the chamber door. When the heat insulation device is installed on the chamber door of the atomic layer deposition equipment, the handle of the chamber door is usually a part that is easily affected by external forces, and may be pulled, squeezed, etc. during the process of opening and closing the chamber door. The first layer 41 and the second layer 43 of the handle cover 4 are fixedly connected with the protective layer 3 to form a relatively stable frame structure, and the filling layer 42 is filled in the cavity, which further increases the overall strength and rigidity of this area. When external forces act on the handle, the handle cover 4 can effectively disperse and withstand these external forces, prevent the heat insulation device at the handle from being damaged or deformed due to external forces, thereby ensuring the integrity and reliability of the heat insulation device during long-term use. Moreover, although the main function of the handle cover 4 is to enhance the structural strength, it also has a cooperative working relationship with other parts of the heat insulation device. The first layer 41 and the second layer 43 also have certain heat insulation properties to a certain extent. They can serve as additional heat insulation barriers to reduce the transfer of heat from the handle to the outside.
[0045] As a possible implementation manner, the material of the protection layer 3 includes polyimide, polyetheretherketone or polytetrafluoroethylene.
[0046] Polyimide, polyetheretherketone or polytetrafluoroethylene are selected as the materials of the protective layer 3, and these materials have high mechanical strength and wear resistance. When the thermal insulation device is installed on the atomic layer deposition equipment, the protective layer 3 can resist external physical collisions, friction and other forces to prevent the thermal insulation layer 2 from being scratched, punctured or worn. Moreover, although the main function of the protective layer 3 is not thermal insulation, it itself also has certain thermal insulation properties. It can reduce the transfer of heat to a certain extent, and as an external supplementary barrier to the thermal insulation layer 2, it further reduces the loss of heat from the thermal insulation device to the external environment. The atomic layer deposition equipment is usually in a high temperature environment when working. Polyimide, polyetheretherketone and polytetrafluoroethylene all have good high temperature stability and can maintain their physical and chemical properties at high temperatures. During the operation of the equipment, the protective layer 3 will not soften, deform or decompose due to high temperature, and can always provide protection for the thermal insulation device to ensure the long-term stable operation of the thermal insulation device in a high temperature environment.
[0047] As a possible implementation manner, the materials of the first layer 41 and the second layer 43 include polyimide, polyetheretherketone or polytetrafluoroethylene.
[0048] When polyimide, polyetheretherketone or polytetrafluoroethylene are selected as the material of the first layer 41 and the second layer 43 of the handle cover 4, they can provide additional structural strength for the heat insulation device at the chamber door handle. During the use of the equipment, the handle may be affected by frequent door opening and closing operations, external force collisions, etc. The frame structure formed by the first layer 41 and the second layer 43 can effectively disperse and withstand these external forces to prevent the heat insulation device at the handle from being deformed, damaged or broken. Moreover, although the main function of these three materials is to provide structural strength, they themselves also have certain heat insulation properties. The handle cover 4 works in conjunction with the heat insulation layer 2 to further improve the heat insulation effect of the entire heat insulation device and help maintain the temperature stability in the reaction chamber.
[0049] At the same time, the working environment of the atomic layer deposition equipment may be relatively complex and may be exposed to some chemicals and high temperature conditions. Polyimide, polyetheretherketone and polytetrafluoroethylene all have good chemical stability and high temperature resistance. In a high temperature environment, they will not soften, deform or decompose easily, and can maintain the stability of their structure and performance. At the same time, they have a certain tolerance to common chemicals and can prevent chemical corrosion from damaging the handle cover 4, thereby ensuring that the handle cover 4 can always effectively perform its functions during long-term use.
[0050] As a possible implementation manner, the material of the filling layer 42 includes ceramic fiber cloth, glass fiber cloth or carbon fiber cloth.
[0051] In specific implementation, the filling layer 42 is filled in the cavity between the first layer 41 and the second layer 43. During assembly, the ceramic fiber cloth, glass fiber cloth or carbon fiber cloth needs to be cut into a suitable size and shape so that it can be tightly filled in the cavity. Usually, the filling material can be placed in the cavity by directly plugging it, and then some fixing methods may be used, such as using a small amount of high-temperature resistant adhesive or using the structure of the first layer 41 and the second layer 43 to squeeze and fix the filling layer 42 to a certain extent, so that the filling layer 42 can be stably present in the cavity and form an integral reinforcement structure with the first layer 41 and the second layer 43. The filling layer 42 is located at the core position of the handle cover 4, and its main function is to enhance the structural strength of the handle cover 4. By filling between the first layer 41 and the second layer 43, it can increase the thickness and rigidity of the entire handle cover 4, so that the handle cover 4 has better compression resistance, tensile resistance and bending resistance when subjected to external force. At the same time, the filling layer 42 can also play a certain role in heat insulation and buffering, further optimizing the performance of the heat insulation device.
[0052] As a possible implementation manner, the material of the substrate 1 includes polyimide, polyetheretherketone or polytetrafluoroethylene.
[0053] The substrate 1 is the basic structure of the entire thermal insulation device, and the thermal insulation layer 2 is fixedly arranged on one side of the substrate 1. If the substrate 1 material is polyimide, polyetheretherketone or polytetrafluoroethylene, it can provide stable support for the thermal insulation layer 2. During the assembly process, the thermal insulation layer 2 (such as an aerogel layer) can be attached to the substrate 1 by bonding. Due to the chemical stability and surface characteristics of these substrate 1 materials themselves, it can ensure a good bonding effect with the thermal insulation layer 2, so that the thermal insulation layer 2 is firmly fixed on the substrate 1, and the thermal insulation layer 2 is prevented from separating from the substrate 1 during use. At the same time, the substrate 1 made of the above materials has good mechanical properties, which can also provide a stable support foundation for the handle cover 4, so that the handle cover 4 can effectively transfer the force to the substrate 1 when it is subjected to the external force at the chamber door handle, and the stress is dispersed by the substrate 1 to ensure the structural stability of the entire device. And the substrate 1 is selected from these materials, so that the substrate 1 itself also has a certain thermal insulation performance, although it is not as significant as a special thermal insulation layer 2 material (such as aerogel), but it can also play a certain auxiliary thermal insulation role in the entire thermal insulation device. When heat is transferred out from the chamber door, the substrate 1 can serve as a defense line to block the transfer of part of the heat, and work together with the thermal insulation layer 2 to reduce the loss of heat to the external environment.
[0054] As a possible implementation manner, four edges of the substrate 1 are bent in a direction facing the same surface of the substrate 1 to form a groove structure, and the groove structure is used to cover the chamber door.
[0055] In specific implementation: the groove structure is directly covered on the chamber door so that the edge of the chamber door can be embedded in the groove. This design enables the substrate 1 to tightly wrap the chamber door to achieve comprehensive coverage and tight fit. As a part of the substrate 1, the groove structure is closely related to other components on the substrate 1 (such as the insulation layer 2, the protective layer 3 and the handle cover 4, etc.). It provides a basic framework for installation and fixation of these components. The insulation layer 2 is fixed to the side of the substrate 1 that contacts the chamber door, that is, the insulation layer 2 is fixed to the part of the groove structure that contacts the chamber door.
[0056] When the groove-shaped structure is covered on the chamber door, it can fix the heat insulation device through its own shape and structure. The inner wall of the groove fits tightly with the edge of the chamber door, generating a certain friction and clamping force, so that the heat insulation device can be firmly installed on the chamber door and will not fall off easily. At the same time, this tight fit can also play a good sealing role, preventing heat from leaking out from the gap between the chamber door and the substrate 1. During the operation of the atomic layer deposition equipment, high temperature will be generated inside. If there is no good sealing, the heat will be lost through the gap, affecting the heat insulation effect and energy utilization efficiency of the equipment. The sealing effect of the groove-shaped structure can effectively reduce this heat leakage and keep the temperature in the reaction chamber stable. At the same time, the design of the groove-shaped structure makes the installation and removal of the heat insulation device more convenient and quick. During installation, the operator only needs to align the groove with the edge of the chamber door, and then gently press or push to install the heat insulation device in place. When disassembly is required, the heat insulation device can also be removed from the chamber door by simple operation without causing damage to the chamber door or the heat insulation device itself. This convenience is very important for equipment maintenance and care, as it can save time and labor costs and improve work efficiency.
[0057] An embodiment of the present invention also provides an atomic layer deposition device, including an atomic layer deposition device body and a thermal insulation device, wherein the atomic layer deposition device body includes a reaction chamber and a chamber door arranged on the top of the reaction chamber, and a handle is provided on the chamber door; the thermal insulation device provided above is used to cover the chamber door to reduce the heat exchange between the reaction chamber and the outside world.
[0058] Compared with the prior art, the specific implementation of the atomic layer deposition equipment is as described in the above-mentioned insulation device and will not be repeated here.
[0059] The present invention also provides a method for preparing a heat insulation device, comprising:
[0060] Providing a substrate 1 with a through hole;
[0061] A heat insulation layer 2 is provided on one side of the substrate 1, and the heat insulation layer 2 is used to contact with the chamber door of the atomic layer deposition device;
[0062] A protective layer 3 is provided on the outer surfaces of the heat insulating layer 2 and the substrate 1, and the through hole is exposed;
[0063] A handle cover 4 fixedly connected to the protective layer 3 is provided, and the handle cover 4 is located on a side of the substrate 1 opposite to the heat insulating layer 2; the handle cover 4 is used to cover the handle of the chamber door.
[0064] When implementing:
[0065] S1: Provide a substrate 1.
[0066] Specifically, according to the size of the chamber door of the atomic layer deposition equipment, a substrate 1 of appropriate size and material is selected. If the substrate 1 needs to be processed, such as bending the edges on all sides to form a groove structure, it is processed according to the corresponding process to ensure that the size of the substrate 1 is accurately matched with the chamber door.
[0067] S2: a heat insulating layer 2 is provided on one side of the substrate 1; the heat insulating layer 2 is used to contact with a chamber door of the atomic layer deposition device.
[0068] Specifically, cut a suitable size of aerogel felt as the heat insulation layer 2, so that its size matches one side of the substrate 1, and bond the aerogel felt to the selected side of the substrate 1 through a high temperature resistant adhesive. During the bonding process, ensure that the aerogel felt and the substrate 1 fit tightly without bubbles or wrinkles. Use tools or gently press the aerogel felt to make it fully contact with the substrate 1, and ensure that the high temperature resistant adhesive is evenly distributed to ensure a good bonding effect;
[0069] S3: a protective layer 3 is disposed on a side of the heat-insulating layer 2 away from the substrate 1 ; and the protective layer 3 covers the outer surface of the substrate 1 .
[0070] Specifically, a polyimide film of appropriate size is cut as the protective layer 3, and its size should be able to cover the outer surface of the thermal insulation layer 2 and the substrate 1. The polyimide film is covered on the side of the thermal insulation layer 2 away from the substrate 1 and extends to the outer surface of the substrate 1. The polyimide film is fixed to the thermal insulation layer 2 and the substrate 1 using a high temperature resistant adhesive, and it is noted that the edges must be sealed to prevent air and heat leakage.
[0071] S4: a handle cover 4 fixedly connected to the protective layer 3 is provided, the handle cover 4 is located on a side of the substrate 1 opposite to the heat insulation layer 2, and the handle cover 4 is covered in the through hole.
[0072] Specifically, according to the size of the handle of the atomic layer deposition equipment and the size of the groove on the substrate 1, measure and cut the ceramic fiber cloth (or other materials) and polyimide film of appropriate size. The size of the polyimide film should be able to completely wrap the ceramic fiber cloth. Use polyimide film to wrap the ceramic fiber cloth and seal it with a high-temperature resistant adhesive. Make sure that the ceramic fiber cloth is tightly wrapped in the polyimide film to form an independent insulation and reinforcement component. During the wrapping process, pay attention to exclude air so that the film and the ceramic fiber cloth are fully fitted to ensure good insulation and reinforcement effects.
[0073] S5: Assemble and arrange the above-mentioned heat insulation layer 2, protection layer 3 and handle cover 4 on the substrate 1.
[0074] Compared with the prior art, the beneficial effects of the preparation method of the thermal insulation device are the same as the beneficial effects of the above-mentioned thermal insulation device, which will not be described in detail here.
[0075] In the description of the above embodiments, specific features, structures, materials or characteristics may be combined in a suitable manner in any one or more embodiments or examples.
[0076] The above is only a specific embodiment of the present invention, but the protection scope of the present invention is not limited thereto. Any person skilled in the art can easily think of changes or substitutions within the technical scope disclosed by the present invention, which should be included in the protection scope of the present invention. Therefore, the protection scope of the present invention should be based on the protection scope of the claims.
Claims
1. A heat insulation device, characterized in that: include: A substrate, wherein the substrate is provided with a through hole, the through hole is used to pass through a handle of a chamber door of an atomic layer deposition device, and the substrate is used to cover the chamber door; A heat insulation layer, the heat insulation layer is fixedly arranged on one side of the substrate, and the heat insulation layer is used to contact the chamber door; A protective layer, the protective layer covers the outer surfaces of the substrate and the thermal insulation layer and exposes the through hole; A handle cover is fixedly connected to the protective layer at the through hole, the handle cover is located on a side of the substrate opposite to the heat insulation layer, and the handle cover is used to cover the handle of the chamber door.
2. The thermal insulation device according to claim 1, characterized in that The heat insulation layer is an aerogel layer, the aerogel layer is bonded to one side of the substrate, and the aerogel layer is used to contact the chamber door.
3. The thermal insulation device according to claim 1, characterized in that: The handle cover comprises a first layer, a filling layer and a second layer which are arranged in sequence from the heat insulation layer to the substrate: the first layer and the second layer are both fixedly connected to the protective layer; the filling layer is used to enhance the structural strength of the handle cover.
4. The heat insulation device according to claim 3, characterized in that The materials of the first layer and the second layer include polyimide, polyetheretherketone or polytetrafluoroethylene.
5. The thermal insulation device according to claim 3, characterized in that: The material of the filling layer includes ceramic fiber cloth, glass fiber cloth or carbon fiber cloth.
6. The thermal insulation device according to claim 1, characterized in that: The material of the protective layer includes polyimide, polyetheretherketone or polytetrafluoroethylene.
7. The thermal insulation device according to claim 1, characterized in that: The material of the substrate includes polyimide, polyetheretherketone or polytetrafluoroethylene.
8. The thermal insulation device according to claim 1, characterized in that The four peripheral edges of the substrate are bent toward the same surface of the substrate to form a groove-shaped structure, and the groove-shaped structure is used for covering the chamber door.
9. An atomic layer deposition device, characterized in that: The atomic layer deposition equipment comprises: An atomic layer deposition device body, the atomic layer deposition device body comprising a reaction chamber and a chamber door arranged on the top of the reaction chamber, the chamber door being provided with a handle; The heat insulation device according to any one of claims 1 to 8 is used to cover the chamber door to reduce heat exchange between the reaction chamber and the outside.
10. A method for preparing a thermal insulation device, characterized in that: include: Providing a substrate with a through hole; A heat insulating layer is provided on one side of the substrate, wherein the heat insulating layer is used to contact with a chamber door of an atomic layer deposition device; A protective layer is provided on the outer surface of the heat insulation layer and the substrate, and the through hole is exposed; A handle cover is provided which is fixedly connected to the protective layer. The handle cover is located on a side of the substrate which is opposite to the heat insulating layer. The handle cover is used to cover the handle of the chamber door.