Flash memory particle processing method, flash memory particle processing equipment and storage medium

Abstract

The invention discloses a flash memory particle processing method, flash memory particle processing equipment and a storage medium, relates to the technical field of flash memory processing, and discloses a flash memory particle processing method which comprises the following steps: acquiring detection information of flash memory particles, and determining the life cycle of the flash memory particles based on the detection information; according to the life cycle, determining a target value corresponding to a correlation characteristic value of the flash memory control program, the target value being in positive correlation with the life cycle, and the correlation characteristic value including a programming characteristic value and an erasure characteristic value; and if the current filling value of the related characteristic value is different from the target value, updating the current filling value to the target value. On the basis, the current feature values of the flash memory particles are updated through the related feature values conforming to the current life cycle of the flash memory particles, and meanwhile, the processing efficiency of the flash memory particles during data processing in the early stage of the life cycle is improved based on the positive correlation between the target value and the change of the life cycle.

Description

Technical Field

[0001] The present application relates to the field of flash memory processing technology, and in particular to a flash memory particle processing method, a flash memory particle processing device and a storage medium. Background Art

[0002] In the life cycle of NAND Flash, the reliability is relatively high in the early stage, but relatively poor in the later stage. The data writing method of NAND Flash is based on a fixed programming method for data writing. In order to ensure that NAND Flash also meets the performance requirements in the later stage, designers generally design the programming method based on the performance requirements in the later stage. Therefore, in the early stage when the reliability is high, there is a great waste of performance due to the overly conservative programming scheme, which reduces the efficiency of data writing.

[0003] The above contents are only used to assist in understanding the technical solution of the present application and do not constitute an admission that the above contents are prior art. Summary of the invention

[0004] The main purpose of the present application is to provide a flash memory particle processing method, a flash memory particle processing device and a storage medium, aiming to solve the technical problem that in the early stage of high reliability, there is a great waste of performance due to the overly conservative programming scheme, which leads to a decrease in data writing efficiency.

[0005] To achieve the above objectives, the present application proposes a method for processing flash memory particles, comprising:

[0006] Acquire detection information of the flash memory particles, and determine the life cycle of the flash memory particles based on the detection information;

[0007] Determine a target value corresponding to a relevant characteristic value of the flash memory control program according to the life cycle, the target value is positively correlated with the life cycle, and the relevant characteristic values ​​include a programming characteristic value and an erasing characteristic value;

[0008] If the current fill value of the relevant feature value is different from the target value, the current fill value is updated to the target value.

[0009] In one embodiment, the step of acquiring detection information of a flash memory particle and determining the life cycle of the flash memory particle based on the detection information includes:

[0010] Acquire detection information of the flash memory particles sent by the detection tool, and determine the programming and erasing times of the flash memory particles based on the detection information;

[0011] Perform table lookup based on the number of programming and erasing times to obtain the life cycle interval corresponding to the number of programming and erasing times in the pre-stored periodic table;

[0012] The life cycle of the flash memory particles is determined according to the life cycle interval.

[0013] In one embodiment, after the step of acquiring the detection information of the flash memory particles sent by the detection tool and determining the programming and erasing times of the flash memory particles based on the detection information, the method further includes:

[0014] Perform table lookup based on the number of programming and erasing times to obtain target performance parameters corresponding to the number of programming and erasing times in a pre-stored performance table;

[0015] The performance parameter of the flash memory particle is obtained, and when the performance information of the performance parameter is less than the performance information of the target performance parameter, the target life cycle associated with the target performance parameter is set as the life cycle of the flash memory particle.

[0016] In one embodiment, after the step of acquiring the detection information of the flash memory particles sent by the detection tool and determining the programming and erasing times of the flash memory particles based on the detection information, the method further includes:

[0017] Obtain a pre-stored life cycle prediction model, and input the number of programming and erasing times into the life cycle prediction model to obtain the life cycle of the flash memory particle; or

[0018] A simulation model of a flash memory particle is obtained, and the simulation model is controlled to perform programming and erasing processing based on the number of programming and erasing times, and the life cycle of the simulation model after the processing is determined.

[0019] In one embodiment, before determining a target value corresponding to a relevant characteristic value of a flash memory control program according to a life cycle, wherein the target value is positively correlated with the life cycle, and the relevant characteristic value includes a programming characteristic value and an erasing characteristic value, the step further includes:

[0020] Obtain a data sheet of the flash memory particle, and determine the flash memory type of the flash memory particle based on the data sheet;

[0021] The steps of determining a target value corresponding to a relevant characteristic value of a flash memory control program according to the life cycle, wherein the target value is positively correlated with the life cycle, and the relevant characteristic value includes a programming characteristic value and an erasing characteristic value include:

[0022] The target value corresponding to the relevant characteristic value of the flash memory control program is determined according to the flash memory type.

[0023] In one embodiment, the step of acquiring detection information of a flash memory particle and determining the life cycle of the flash memory particle based on the detection information includes:

[0024] Obtaining detection information of the flash memory particles, and determining error rate information and read / write frequency of the flash memory particles based on the detection information;

[0025] Determine the life cycle of the flash memory particles based on the error rate information and the read and write frequency.

[0026] In one embodiment, before the step of obtaining detection information of the flash memory particles and determining the life cycle of the flash memory particles based on the detection information, the method further includes:

[0027] Obtain basic information about flash memory particles, including specifications, models, performance indicators, and service life of flash memory particles;

[0028] A detection template is selected based on the basic information, and information detection is performed on the flash memory particles based on the detection tool.

[0029] In one embodiment, if the current filling value of the relevant feature value is different from the target value, after the step of updating the current filling value to the target value, the method further includes:

[0030] Obtaining a performance testing tool for the flash memory particles, and performing a performance testing process on the flash memory particles based on the performance testing tool to obtain a performance testing report for the flash memory particles;

[0031] When the performance information in the performance test report meets the performance information corresponding to the life cycle of the flash memory particle, the relevant characteristic values ​​of other flash memory particles in the same life cycle are updated based on the modified target value of the flash memory particle.

[0032] In addition, to achieve the above-mentioned purpose, the present application also proposes a processing device for flash memory particles, and the processing device for flash memory particles includes: a memory, a processor, and a computer program stored in the memory and executable on the processor, and the computer program is configured to implement the steps of the flash memory particle processing method as described above.

[0033] In addition, to achieve the above-mentioned purpose, the present application also proposes a storage medium, which is a computer-readable storage medium, and a computer program is stored on the storage medium. When the computer program is executed by a processor, the steps of the flash memory particle processing method described above are implemented.

[0034] One or more technical solutions proposed in this application have at least the following technical effects:

[0035] Through the detection information of the flash memory particles, its corresponding life cycle is obtained, and then the target values ​​corresponding to the programming characteristic values ​​and erasure characteristic values ​​of the flash memory particles that meet the current life cycle state are determined. Then, when the current programming characteristic values, erasure characteristic values ​​and characteristic values ​​are different from the values ​​of the characteristic values ​​that meet the current life cycle state, the current programming characteristic values ​​and erasure characteristic values ​​are modified and updated to the target values. Based on this, in the early stage of the life cycle, since the target value is small, according to the positive correlation between the target value and the life cycle, the data processing efficiency of the flash memory particles will be relatively high, which means that the flash memory particles are less affected when performing read and write operations in the early stage of the life cycle, so that data can be processed faster, so that the flash memory particles can write and erase data in a fast programming manner in the early stage of the life cycle, avoiding the waste of flash memory particle performance and improving the data processing efficiency in the early stage of the life cycle. BRIEF DESCRIPTION OF THE DRAWINGS

[0036] The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the present application and, together with the description, serve to explain the principles of the present application.

[0037] In order to more clearly illustrate the technical solutions in the embodiments of the present application or the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, for ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative labor.

[0038] Figure 1 A schematic diagram of a process flow provided for a first embodiment of a method for processing flash memory particles of the present application;

[0039] Figure 2 This is a schematic diagram of a detailed process of step S10 of the first embodiment in the second embodiment of the method for processing flash memory particles of the present application;

[0040] Figure 3 A schematic diagram of a process flow provided for a fifth embodiment of a method for processing flash memory particles;

[0041] Figure 4 Schematic diagram of the device structure of the hardware operating environment involved in the method for processing flash memory particles in the embodiment of the present application.

[0042] The purpose, features and advantages of this application will be further described in conjunction with the embodiments and with reference to the accompanying drawings. DETAILED DESCRIPTION

[0043] It should be understood that the specific embodiments described herein are only used to explain the technical solutions of the present application and are not used to limit the present application.

[0044] In this embodiment, for the convenience of description, the following description is made by taking the processing device of the flash memory particles as the execution subject.

[0045] In the prior art, during the life cycle of NAND Flash, the reliability is relatively high in the early stage, but relatively poor in the later stage. The data writing method of NAND Flash is based on a fixed programming method for data writing. In order to ensure that NAND Flash also has the required performance in the later stage, designers generally design the programming method based on the performance requirements in the later stage. Therefore, in the early stage when the reliability is relatively high, there is a great waste of performance due to the overly conservative programming scheme, which reduces the efficiency of data writing.

[0046] The present application provides a solution, which obtains the corresponding life cycle through the detection information of the flash memory particles, and then determines the target programming and erasing characteristic values ​​corresponding to the flash memory particles in the current life cycle based on the life cycle, and then updates the current programming and erasing characteristic values ​​based on the target programming and erasing characteristic values. Based on this, in the early stage of the life cycle, due to the small amount of the target programming and erasing characteristic values, according to the positive correlation, the data processing efficiency of the flash memory particles will be relatively high, which means that the flash memory particles are less affected when performing read and write operations in the early stage of the life cycle, so that data can be processed faster. Based on this, the flash memory particles can write and erase data in a fast programming manner in the early stage of the life cycle, thereby avoiding the waste of flash memory particle performance and improving the data processing efficiency in the early stage of the life cycle. At the same time, in the later stage of the life cycle, the same operation is completed by programming and erasing characteristic values, which reduces the data processing efficiency while ensuring the reliability of data processing in the later stage of the life cycle.

[0047] It should be noted that the execution subject of this embodiment may be a computing service device with data processing, network communication and program running functions, such as a tablet computer, a personal computer, a mobile phone, etc., or an electronic device capable of realizing the above functions, a flash memory particle processing device, etc. The following takes the flash memory particle processing device as an example to illustrate this embodiment and the following embodiments.

[0048] In order to better understand the technical solution of the present application, a detailed description will be given below in conjunction with the accompanying drawings and specific implementation methods.

[0049] The present application embodiment provides a method for processing flash memory particles, referring to Figure 1 , Figure 1 This is a flow chart of a first embodiment of a method for processing flash memory particles of the present application.

[0050] In this embodiment, the method for processing flash memory particles includes steps S10 to S30:

[0051] Step S10, acquiring detection information of the flash memory particles, and determining the life cycle of the flash memory particles based on the detection information.

[0052] It should be noted that the detection information can be obtained through a detection tool, which can be a third-party detection tool and is not limited here. The detection information usually includes the number of programming and erasure times of the flash memory particles, data read and write error rate, read and write frequency, voltage, temperature, firmware version, and basic information such as the specifications, model, performance indicators and service life of the flash memory particles. Among them, the basic information has been determined before the detection and does not need to be obtained through the detection tool.

[0053] The number of programming and erasing times refers to the Program / Erase Cycle of flash memory particles, hereinafter referred to as P / E. The P / E of flash memory particles is an important indicator to measure the life of flash memory. P stands for programming, that is, writing data into the flash memory; E stands for erasing, that is, deleting data from the flash memory. Each complete programming and erasing operation is counted as a P / E cycle. Since flash memory particles are limited in the number of times they can be erased and written, the size of P / E directly affects the service life of the flash memory, and the size of P / E can reflect the current life cycle of the flash memory particles. Therefore, by obtaining the detection information of the flash memory particles, the processing device of the flash memory particles can judge the current life cycle of the flash memory particles based on parameters such as P / E and erase error rate in the detection information.

[0054] In this embodiment, during the detection process, the basic information of the flash memory particles can be obtained first, and then the detection method that meets the flash memory particles is selected and detected based on the basic information, so as to obtain the detection information of the flash memory particles. After the flash memory particles are detected and processed to obtain the detection information, the current life cycle of the flash memory particles is determined by the P / E in the detection information. For example, the life cycle can be determined by the association between P / E and the life cycle, the life cycle can be determined by the performance parameters associated with P / E, the life cycle corresponding to P / E can be calculated by algorithms, models, etc., or the life cycle of the flash memory particles can be determined by the error information of the flash memory particles in the detection information.

[0055] As an optional implementation, before step S10, it is necessary to detect the flash memory particles. In the process of detecting the flash memory particles to obtain the detection information, the basic information of the flash memory particles is first obtained. The basic information includes the specifications, models, performance indicators and service life of the flash memory particles. Flash memory particles of different specifications and models need to adopt different detection methods and standards, and the differences in their performance indicators will also affect the focus and difficulty of the detection. Therefore, it is necessary to select a detection template that meets the type / model of the current flash memory particles based on the basic information to ensure the pertinence and effectiveness of the detection process and improve the detection accuracy. Among them, the detection template may include an SLC (Single-Level Cell) particle detection template, an MLC (Multi-Level Cell) particle detection template, a TLC (Trinary-Level Cell) particle detection template, a detection template based on a specific brand or model, or other detection templates, which are not limited in this application.

[0056] After selecting the detection template based on the basic information, the detection tool performs information detection processing on the flash memory particles. The detection method is the detection method set by the detection template. After completing the detection processing method corresponding to the detection template, the detection information of the flash memory particles is obtained. Among them, the detection information includes the basic information of the flash memory particles after the detection is completed, as well as information such as the life cycle of the flash memory particles and the actual performance size. Based on this detection information, the accuracy of the judgment of the life cycle of the flash memory particles can be improved.

[0057] In this embodiment, after determining the life cycle of the flash memory particle, the parameters related to P / E, namely, the encoding characteristic value and the erasure characteristic value, in the flash memory control program of the flash memory particle can be updated based on the life cycle. This allows the flash memory particle to write and erase data using the encoding parameters / encoding methods that match the current life cycle under different life cycles, thereby improving the reliability and stability of the flash memory particle when processing data.

[0058] Step S20, determining a target value corresponding to a relevant characteristic value of the flash memory control program according to the life cycle.

[0059] It should be noted that the flash memory control program is responsible for receiving read and write requests from the system or application program, and converting these requests into instructions that the device can understand and execute, thereby ensuring that the data is written into the flash memory in the correct format and order. The relevant characteristic values ​​include programming characteristic values ​​and erasing characteristic values, where the coding characteristic values ​​and erasing characteristic values ​​at least include Erase voltage, Program voltage, Erase verify, Program target, Read voltage, Interval, and Target Level. These relevant characteristic values ​​can characterize the data processing efficiency of the flash memory particles when processing data.

[0060] The target value is the value corresponding to the relevant characteristic value. The larger the value, the larger the parameters such as the erase voltage and programming voltage are when the flash memory particles are processing data, and the higher the energy consumption and heat generated by the memory particles, resulting in lower data processing efficiency. In the early stage of the life cycle, since the flash memory particles are less worn, their threshold voltage is relatively stable, and there is no need to frequently adjust the characteristic values ​​of programming and erasing. Therefore, in the early stage of the life cycle, the corresponding relevant characteristic value is small, and this characteristic value can significantly improve the data processing efficiency of the current processing stage. Therefore, the target value of the relevant characteristic value is positively correlated with the life cycle. In the early stage of the life cycle, the target value is small. At this time, when the current characteristic value of the flash memory particles is adjusted based on the target value, it can be adjusted to a value that meets the fast data processing efficiency of the current life cycle, thereby improving the data processing efficiency in the early stage of the life cycle. By determining the target value corresponding to the relevant characteristic value, the current characteristic value of the flash memory particles can be updated through the data, so that the flash memory particles can improve the data processing efficiency in the early stage of the life cycle and improve the data processing stability in the later stage.

[0061] In this embodiment, in the process of determining the target value corresponding to the relevant characteristic value, a table lookup process can be directly performed based on the life cycle to obtain the target value. For example, if the flash memory particle is currently in the early stage of the life cycle, the target data corresponding to the flash memory particle is obtained by table lookup as A. The data table associating the life cycle with the target value is pre-stored in the storage area of ​​the processing device of the flash memory particle.

[0062] Exemplarily, one of the experimental parameters of the target data corresponding to the relevant characteristic values ​​is shown in Table 1:

[0063] Parameter Type PE0 PE1000 PE3000 PE5000 Internal 0 2 4 8 Target Level1 32 34 36 40 Target Level2 96 100 104 112 Target Level3 160 166 172 184 Time 0.8ms 1.0ms 1.2ms 1.6ms

[0064] Table 1, Correspondence table of characteristic values ​​and target data

[0065] Among them, PE refers to the number of programming and erasing times, Internal refers to the interval when data is processed, the three different levels of TargetLevel refer to the parameters corresponding to data encoding, and Time refers to the time spent on data processing. It can be seen that with the change of the life cycle, the value of the target level gradually increases, and in terms of data processing time, the fewer the current PE times, the shorter the processing time of the data corresponding to the target data, that is, to ensure that the flash memory particles are in the early stage of the life cycle and improve the data processing efficiency. It can be understood that a longer interval (Internal) can reduce the frequency of data processing operations that the storage unit undergoes, thereby improving the accuracy of data writing. This helps to reduce the error rate and improve the reliability of data, thereby improving the data processing efficiency in the early stage of the life cycle when the reliability is high, and improving the reliability of the flash memory particles in the later stage of the life cycle.

[0066] Step S30: if the current filling value of the relevant feature value is different from the target value, the current filling value is updated to the target value.

[0067] In this embodiment, the current fill value refers to the current numerical value of the relevant characteristic value. If the value is different from the target value, it means that the flash memory control program of the flash memory particle is not running according to the set parameters. At this time, the flash memory particle performance may be wasted in the early stage of its life cycle, or the reliability of the flash memory particles may be insufficient in the later stage of its life cycle.

[0068] Therefore, the current fill value is updated to the target value, so that the flash control program of the flash memory particle can process data based on parameters that meet the relevant characteristic values ​​of the current life cycle, thereby improving data processing efficiency in the early stage of the life cycle and data reliability in the later stage of the life cycle.

[0069] This embodiment provides a method for processing flash memory particles, which determines the programming and erasure times of the flash memory particles according to the detection information of the flash memory particles, and then determines the life cycle of the flash memory particles based on the programming and erasure times, thereby improving the accuracy of the life cycle prediction. At the same time, the target value of the relevant characteristic value of the flash memory particle is determined according to the type of the flash memory particle, and the current relevant characteristic value is updated based on the target value, so that the flash memory particles perform data processing based on the relevant characteristic value that improves the data processing efficiency in the early stage of the life cycle, improve the data writing efficiency, shorten the programming time, and improve the reliability of the data in the later stage of the life cycle.

[0070] Based on the first embodiment of the present application, in the second embodiment of the present application, the same or similar contents as those in the first embodiment can refer to the above introduction, and will not be repeated in the following. Figure 2 , step S10 may include steps S11 to S13:

[0071] Step S11, acquiring detection information of the flash memory particles sent by the detection tool, and determining the programming and erasing times of the flash memory particles based on the detection information.

[0072] It should be noted that the detection tool can collect real-time status data of the flash memory particles through built-in sensors, including but not limited to parameters such as temperature, voltage and current. These data will be transmitted to the processing unit, which analyzes these data according to a preset algorithm to evaluate the health status and remaining life of the flash memory particles and generate corresponding detection information. Among them, the detection information also includes information on the number of programming and erasure times of the flash memory particles.

[0073] In this embodiment, after the detection information sent by the detection tool is obtained, the content of the detection information can be directly read to obtain the relevant information of the programming and parameter times of the flash memory particles.

[0074] Step S12, performing table lookup processing based on the programming and erasing times to obtain the life cycle interval corresponding to the programming and erasing times in the pre-stored periodic table.

[0075] In this embodiment, in the process of performing table lookup processing through the programming and erasing times of the flash memory particles, the programming and erasing times are used as query input quantities to query the data stored in the pre-stored data table. Among them, the data table usually stores the critical values ​​corresponding to the life cycle of the flash memory particles. For example, the critical values ​​are set to 100 and 200. If the value of the programming and erasing times is 90, which is less than the critical value, it means that the life cycle of the flash memory particles is in the early stage. If the value of the programming and erasing times is between 100-200, the life cycle is in the middle stage. If it is above 200, it is in the late stage. Therefore, the life cycle of the current flash memory particles can be determined by the life cycle interval corresponding to the programming and erasing times.

[0076] Optionally, the life cycle of a flash memory particle is usually divided into an early stage and a late stage, so a corresponding critical value may be set based on the specific life cycle division.

[0077] It should be noted that the above critical value parameters are only used for explanation and are not limitations of the present application.

[0078] Step S13, determining the life cycle of the flash memory particle according to the life cycle interval.

[0079] The life cycle interval is the early period, indicating that the life cycle of the current flash memory particle is in the early period.

[0080] In this embodiment, by using the number of programming and erasing as input parameters for query processing, the life cycle interval corresponding to the number of programming and erasing in the pre-stored period table can be obtained, and then the life cycle of the flash memory particle is determined based on the life cycle interval, so as to determine the target value of the relevant characteristic value that needs to be adjusted based on the current life cycle of the flash memory particle.

[0081] Based on the second embodiment of the present application, in the third embodiment of the present application, after obtaining the number of programming and erasing times, the current life cycle can also be judged based on the performance degradation trend corresponding to the number of programming and erasing times.

[0082] Specifically, after step S11, a table lookup process can also be performed based on the number of programming and erasing times to obtain the target performance parameters corresponding to the number of programming and erasing times in the pre-stored performance table, and then the performance parameters of the flash memory particles are obtained, and when the performance information of the performance parameters is less than the performance information of the target performance parameters, the target life cycle associated with the target performance parameters is set to the life cycle of the flash memory particles.

[0083] It is understandable that performance parameters usually include the read speed, write speed and error rate of the flash memory particles. By matching the target performance indicators such as read speed, write speed and error rate under the number of programming and erasing times in the data table, and then comparing the actual measured performance data with the data in the data table, the life cycle stage of the flash memory particles can be determined.

[0084] Optionally, after obtaining the number of programming and erasing times, in addition to determining the current life cycle by looking up a table, the life cycle can also be determined by using a pre-stored life cycle prediction model, a simulation model of the flash memory particles, and the like.

[0085] Specifically, a pre-stored life cycle prediction model can be obtained first, and the number of programming and erasing times can be input into the life cycle prediction model to obtain the life cycle of the flash memory particles. Alternatively, a simulation model of the flash memory particles can be obtained, and the simulation model can be controlled to perform programming and erasing processing based on the number of programming and erasing times, and the life cycle of the simulation model after processing can be determined. Among them, when establishing a life cycle prediction model for flash memory particles, it is necessary to first collect physical information and life information of sample flash memory chips, including characteristic quantities such as programming time, erasing time, threshold voltage distribution and error rate. Then, these data are processed using an intelligent algorithm to obtain a life cycle prediction model. In this process, deep learning methods such as convolutional neural networks (CNN) or recurrent neural networks (RNN) can be used to improve the accuracy and generalization performance of the prediction. When constructing a simulation model for flash memory particles, data from experiments or actual use are first collected to obtain characteristic quantities such as programming time, erasing time, threshold voltage distribution and error rate of the flash memory particles. Then, a suitable model type is selected according to the needs, and relevant parameters are passed in when the model is compiled so that the simulation model can be adjusted according to the specific application scenario to adapt to different simulation needs. Finally, by using professional simulation tools to build a simulation environment, the simulation model is obtained, and the accuracy and reliability of the model are verified through simulation operation. The model is optimized based on the verification results.

[0086] Optionally, the detection information of the flash memory particles can also be obtained, and based on the detection information, the error rate information and the read-write frequency of the flash memory particles can be determined, and then the life cycle of the flash memory particles can be determined based on the error rate information and the read-write frequency. For example, when the error rate information and the read-write frequency are both in the interval corresponding to the early stage of the life cycle, the life cycle of the flash memory particles is determined to be in the early stage; when the error rate information and the read-write frequency are in the interval of the middle stage of the life cycle, it can be determined that the life cycle of the flash memory particles is in the middle stage. If both are in the interval of the late stage of the life cycle, it indicates that the flash memory particles are approaching the end of their service life, that is, the life cycle of the flash memory particles is in the late stage. In addition, the life cycle determined by the error rate information and the read-write frequency can be verified with the life cycle determined by the number of programming and erasures. For example, if the life cycle determined by the error rate information and the read-write frequency is in the early stage, and the life cycle determined by the number of programming and erasures is also in the early stage, then the current life cycle of the flash memory particles can be determined to be in the early stage. On the contrary, if the results of the two are inconsistent, for example, the life cycle is determined to be in the middle stage by the read-write frequency and the error rate information, and it is determined to be in the late stage by the number of programming and erasures, it is necessary to re-detect or update the parameter table for determining the life cycle. The double verification mechanism can more accurately evaluate the actual life cycle of flash memory particles.

[0087] In this embodiment, the life cycle of the flash memory particles is determined by the number of programming and erasing times, i.e., P / E, of the flash memory particles, thereby improving the accuracy of the life cycle prediction. At the same time, the current life cycle information is further verified by other data in the detection information, thereby further improving the accuracy of the life cycle prediction.

[0088] Based on the first embodiment of the present application, in the fourth embodiment of the present application, the same or similar contents as those in the first embodiment can be referred to the above introduction, and will not be repeated later. On this basis, since different types of flash memory particles have different corresponding sizes of relevant characteristic values ​​in the same life cycle, therefore, in step S20, before the step of determining the target numerical value corresponding to the relevant characteristic value of the flash memory control program according to the life cycle, it is also necessary to obtain the data manual of the flash memory particle and determine the flash memory type of the flash memory particle based on the data manual. Among them, the data manual refers to the datasheet of the flash memory particle. The acquisition method includes matching the flash memory number of the flash memory particle with the flash memory number adapted by the existing datasheet, and when the same flash memory number is matched, the datasheet of the number is used as the datasheet of the flash memory particle. The datasheet records the basic information, usage information, adaptation information and other related information of the flash memory particle, and the flash memory type of the flash memory particle can be determined by reading the data manual.

[0089] After determining the flash memory type, it is necessary to determine the target values ​​corresponding to the relevant characteristic values ​​of the flash memory particles based on the flash memory type and life cycle. It should be noted that for SLC type flash memory particles, the number of writes is usually much higher than that of MLC or TLC type particles. Therefore, in the early stage of the life cycle, the target value of SLC particles can be set higher to fully utilize their performance advantages. For MLC or TLC particles, since their write times are relatively low, the target value needs to be lowered accordingly to avoid premature wear, that is, the target data corresponding to these particles is lower than the target value of SLC particles.

[0090] Based on this, the data table associated with the life cycle and target data is screened according to the flash memory type, that is, the data table that meets the flash memory type is screened out, and then a secondary screening is performed based on the life cycle to obtain the final target data, thereby improving the accuracy of the target value obtained.

[0091] Based on the first embodiment of the present application, in the fifth embodiment of the present application, the same or similar contents as those in the first embodiment can be referred to the above introduction, and will not be described in detail later. Figure 3 After step S30, the method for processing the flash memory particles further includes steps S40 to S50:

[0092] Step S40, obtaining a performance test tool for the flash memory particle, and performing a performance test process on the flash memory particle based on the performance test tool to obtain a performance test report of the flash memory particle.

[0093] After completing the modification of the encoding method of the flash memory particles, it is necessary to verify whether the modified flash memory particles have achieved the expected effect, so as to determine whether the current processing method meets the actual needs and whether the current processing method can cover all flash memory particles of the same type and the same life cycle.

[0094] Therefore, in this embodiment, the performance indicator information of the flash memory particles is retested through a performance testing tool to obtain a performance test report containing performance information of the flash memory particles such as performance indicators, life prediction, reliability and other parameters, so that after the performance information meets the performance corresponding to the current life cycle, it is determined that the flash memory particles have completed the modification and can be used.

[0095] Step S50, when the performance information in the performance test report meets the performance information corresponding to the life cycle of the flash memory particle, based on the modified target value of the flash memory particle, the relevant characteristic values ​​of other flash memory particles in the same life cycle are updated.

[0096] In this embodiment, if the performance information meets the corresponding data processing requirements, the relevant characteristic values ​​of other flash memory particles with the same life cycle and the same flash memory type can be updated based on the current change method, which can avoid repeatedly executing the action of detecting the flash memory particles when all flash memory particles need to be processed, thereby reducing unnecessary repeated operations and improving the processing efficiency of flash memory particles.

[0097] Optionally, if the modification effect is not ideal, that is, the performance information does not meet the requirements, the modification of the flash memory particles can be withdrawn, and then the processing action of step S10 can be jumped to re-adjust the flash memory particles, or other measures can be taken to meet the requirements such as obtaining updated data of relevant characteristic values ​​to re-process the flash memory particles.

[0098] In some implementations, based on the first embodiment of the present application, before obtaining the detection information of the flash memory particles and determining the life cycle of the flash memory particles based on the detection information, basic information of the flash memory particles may be obtained, and a detection template may be selected based on the basic information. After determining the detection template, information detection may be performed on the flash memory particles based on the detection tool to obtain the detection information of the flash memory particles.

[0099] The basic information of the flash memory particles may include one or more of the specifications, models, performance indicators and service life of the flash memory particles.

[0100] Therefore, by matching the detection template that matches the basic information, the life cycle of the flash memory particle can be determined more accurately, thereby improving the pertinence and reliability of the detection.

[0101] This embodiment provides a method for processing flash memory particles. After completing the adjustment of the encoding method of the flash memory particles, the performance detection processing is performed on the flash memory particles to ensure the validity of the modified flash memory particles. At the same time, when the modification method is valid, the flash memory particles of the same type and the same life cycle can be synchronously overwritten and modified based on the current modification method, thereby reducing unnecessary repeated operations and improving the processing efficiency of the flash memory particles.

[0102] The present application provides a processing device for flash memory particles, the processing device for flash memory particles comprising: at least one processor; and a memory connected to the at least one processor in communication; wherein the memory stores instructions that can be executed by the at least one processor, and the instructions are executed by the at least one processor so that the at least one processor can execute the flash memory particle processing method in the first embodiment described above.

[0103] Reference below Figure 4 , which shows a schematic structural diagram of a processing device for flash memory particles suitable for implementing an embodiment of the present application. Figure 4 The processing device of the flash memory particles shown is only an example and should not bring any limitation to the functions and scope of use of the embodiments of the present application.

[0104] like Figure 4As shown, the processing device of the flash memory particles may include a processing device 1001 (such as a central processing unit, a graphics processor, etc.), which can perform various appropriate actions and processes according to the program stored in the read-only memory (ROM: Read Only Memory) 1002 or the program loaded from the storage device 1003 to the random access memory (RAM: Random Access Memory) 1004. In the RAM 1004, various programs and data required for the operation of the processing device of the flash memory particles are also stored. The processing device 1001, ROM 1002 and RAM 1004 are connected to each other through a bus 1005. An input / output (I / O) interface 1006 is also connected to the bus. Generally, the following systems can be connected to the I / O interface 1006: an input device 1007 including, for example, a touch screen, a touch pad, a keyboard, a mouse, an image sensor, a microphone, an accelerometer, a gyroscope, etc.; an output device 1008 including, for example, a liquid crystal display (LCD: Liquid Crystal Display), a speaker, a vibrator, etc.; a storage device 1003 including, for example, a magnetic tape, a hard disk, etc.; and a communication device 1009. The communication device 1009 can allow the processing device of the flash memory particles to communicate with other devices wirelessly or by wire to exchange data. Although the processing device of the flash memory particles with various systems is shown in the figure, it should be understood that it is not required to implement or have all the systems shown. More or fewer systems can be implemented or provided alternatively.

[0105] In particular, according to the embodiments disclosed in the present application, the process described above with reference to the flowchart can be implemented as a computer software program. For example, the embodiments disclosed in the present application include a computer program product, which includes a computer program carried on a computer-readable medium, and the computer program includes a program code for executing the method shown in the flowchart. In such an embodiment, the computer program can be downloaded and installed from a network through a communication device, or installed from a storage device 1003, or installed from a ROM 1002. When the computer program is executed by the processing device 1001, the above-mentioned functions defined in the method of the embodiment disclosed in the present application are executed.

[0106] The processing device of flash memory particles provided by the present application adopts the processing method of flash memory particles in the above embodiment, which can solve the technical problem that in the early stage of high reliability, there is a large efficiency redundancy due to the overly conservative programming scheme, which leads to a decrease in the efficiency of data writing. Compared with the prior art, the beneficial effects of the processing device of flash memory particles provided by the present application are the same as the beneficial effects of the processing method of flash memory particles provided by the above embodiment, and other technical features in the processing device of flash memory particles are the same as the features disclosed in the method of the previous embodiment, which will not be repeated here.

[0107] It should be understood that the various parts disclosed in this application can be implemented by hardware, software, firmware or a combination thereof. In the description of the above embodiments, specific features, structures, materials or characteristics can be combined in any one or more embodiments or examples in a suitable manner.

[0108] The above is only a specific implementation of the present application, but the protection scope of the present application is not limited thereto. Any person skilled in the art who is familiar with the present technical field can easily think of changes or substitutions within the technical scope disclosed in the present application, which should be included in the protection scope of the present application. Therefore, the protection scope of the present application should be based on the protection scope of the claims.

[0109] The present application provides a computer-readable storage medium having computer-readable program instructions (ie, computer programs) stored thereon, and the computer-readable program instructions are used to execute the flash memory particle processing method in the above-mentioned embodiment.

[0110] The computer-readable storage medium provided in the present application may be, for example, a USB flash drive, but is not limited to electrical, magnetic, optical, electromagnetic, infrared or semiconductor systems, systems or devices, or any combination of the above. More specific examples of computer-readable storage media may include, but are not limited to: an electrical connection with one or more wires, a portable computer disk, a hard disk, a random access memory (RAM), a read-only memory (ROM), an erasable programmable read-only memory (EPROM or flash memory), an optical fiber, a portable compact disk read-only memory (CD-ROM), an optical storage device, a magnetic storage device, or any suitable combination of the above. In this embodiment, the computer-readable storage medium may be any tangible medium containing or storing a program that can be used by or in combination with an instruction execution system, system or device. The program code contained on the computer-readable storage medium may be transmitted using any appropriate medium, including but not limited to: wires, optical cables, RF (Radio Frequency), etc., or any suitable combination of the above.

[0111] The computer-readable storage medium may be included in the processing device of the flash memory particle; or may exist independently without being assembled into the processing device of the flash memory particle.

[0112] The computer-readable storage medium carries one or more programs. When the one or more programs are executed by the processing device of the flash memory particle, the processing device of the flash memory particle: obtains detection information of the flash memory particle, and determines the life cycle of the flash memory particle based on the detection information;

[0113] Determine a target value corresponding to a relevant characteristic value of the flash memory control program according to the life cycle, the target value is positively correlated with the life cycle, and the relevant characteristic values ​​include a programming characteristic value and an erasing characteristic value;

[0114] If the current fill value of the relevant feature value is different from the target value, the current fill value is updated to the target value.

[0115] Computer program code for performing the operations of the present application may be written in one or more programming languages ​​or a combination thereof, including object-oriented programming languages ​​such as Java, Smalltalk, C++, and conventional procedural programming languages ​​such as "C" or similar programming languages. The program code may be executed entirely on the user's computer, partially on the user's computer, as a separate software package, partially on the user's computer and partially on a remote computer, or entirely on a remote computer or server. In the case of a remote computer, the remote computer may be connected to the user's computer through any type of network, including a local area network (LAN) or a wide area network (WAN), or may be connected to an external computer (e.g., via the Internet using an Internet service provider).

[0116] The flowcharts and block diagrams in the accompanying drawings illustrate the possible architecture, functions and operations of the systems, methods and computer program products according to various embodiments of the present application. In this regard, each box in the flowchart or block diagram can represent a module, a program segment or a part of a code, and the module, a program segment or a part of the code contains one or more executable instructions for realizing the specified logical function. It should also be noted that in some alternative implementations, the functions marked in the box can also occur in a different order from the order marked in the accompanying drawings. For example, two boxes represented in succession can actually be executed substantially in parallel, and they can sometimes be executed in the opposite order, depending on the functions involved. It should also be noted that each box in the block diagram and / or flowchart, and the combination of boxes in the block diagram and / or flowchart can be implemented with a dedicated hardware-based system that performs a specified function or operation, or can be implemented with a combination of dedicated hardware and computer instructions.

[0117] The modules involved in the embodiments described in this application may be implemented by software or hardware, wherein the name of the module does not constitute a limitation on the unit itself in some cases.

[0118] The readable storage medium provided by the present application is a computer-readable storage medium, which stores computer-readable program instructions (i.e., computer programs) for executing the above-mentioned flash memory particle processing method, and can solve the technical problem that in the early stage of high reliability, there is a large efficiency redundancy due to the overly conservative programming scheme, which leads to a decrease in the efficiency of data writing. Compared with the prior art, the beneficial effects of the computer-readable storage medium provided by the present application are the same as the beneficial effects of the flash memory particle processing method provided by the above-mentioned embodiment, and will not be repeated here.

[0119] The above descriptions are only some embodiments of the present application, and are not intended to limit the patent scope of the present application. All equivalent structural changes made using the contents of the present application specification and drawings under the technical concept of the present application, or direct / indirect applications in other related technical fields are included in the patent protection scope of the present application.

Claims

1. A method for processing flash memory particles, characterized in that: The method comprises: Acquire detection information of the flash memory particles, and determine the life cycle of the flash memory particles based on the detection information; Determine a target value corresponding to a relevant characteristic value of a flash memory control program according to the life cycle, wherein the target value is positively correlated with the life cycle, and the relevant characteristic value includes a programming characteristic value and an erasing characteristic value; If the current filling value of the relevant characteristic value is different from the target value, the current filling value is updated to the target value.

2. The method according to claim 1, characterized in that The step of acquiring detection information of the flash memory particles and determining the life cycle of the flash memory particles based on the detection information includes: Acquire detection information of the flash memory particles sent by a detection tool, and determine the programming and erasing times of the flash memory particles based on the detection information; Perform table lookup based on the programming and erasing times to obtain the life cycle interval corresponding to the programming and erasing times in the pre-stored periodic table; The life cycle of the flash memory particle is determined according to the life cycle interval.

3. The method according to claim 2, characterized in that After the step of acquiring the detection information of the flash memory particles sent by the detection tool and determining the programming and erasing times of the flash memory particles based on the detection information, the method further includes: Performing table lookup based on the programming and erasing times to obtain target performance parameters corresponding to the programming and erasing times in a pre-stored performance table; The performance parameter of the flash memory particle is obtained, and when the performance information of the performance parameter is less than the performance information of the target performance parameter, the target life cycle associated with the target performance parameter is set as the life cycle of the flash memory particle.

4. The method according to claim 2, characterized in that After the step of acquiring the detection information of the flash memory particles sent by the detection tool and determining the programming and erasing times of the flash memory particles based on the detection information, the method further includes: Obtaining a pre-stored life cycle prediction model, and inputting the programming and erasing times into the life cycle prediction model to obtain the life cycle of the flash memory particle; or A simulation model of the flash memory particle is obtained, and the simulation model is controlled to perform programming and erasing processing based on the programming and erasing times, and the life cycle of the simulation model after the processing is determined.

5. The method according to claim 1, characterized in that Before the step of determining a target value corresponding to a relevant characteristic value of a flash memory control program according to the life cycle, wherein the target value is positively correlated with the life cycle, and wherein the relevant characteristic value includes a programming characteristic value and an erasing characteristic value, the step further includes: Obtaining a data sheet of the flash memory particle, and determining the flash memory type of the flash memory particle based on the data sheet; The step of determining a target value corresponding to a relevant characteristic value of a flash memory control program according to the life cycle, wherein the target value is positively correlated with the life cycle, and wherein the relevant characteristic value includes a programming characteristic value and an erasing characteristic value comprises: The target value corresponding to the relevant characteristic value of the flash memory control program is determined according to the flash memory type and the life cycle.

6. The method according to claim 1, characterized in that The step of acquiring detection information of the flash memory particles and determining the life cycle of the flash memory particles based on the detection information includes: Acquire detection information of the flash memory particles, and determine error rate information and read / write frequency of the flash memory particles based on the detection information; Based on the error rate information and the read and write frequency, the life cycle of the flash memory particle is determined.

7. The method according to claim 1, characterized in that Before the step of acquiring the detection information of the flash memory particles and determining the life cycle of the flash memory particles based on the detection information, the method further includes: Obtaining basic information of the flash memory particles, the basic information including specifications, models, performance indicators and service life of the flash memory particles; A detection template is selected based on the basic information, and information detection is performed on the flash memory particles based on a detection tool.

8. The method according to any one of claims 1 to 7, characterized in that After the step of updating the current filling value to the target value if the current filling value of the relevant feature value is different from the target value, the method further includes: Acquire a performance test tool for the flash memory particle, and perform a performance test on the flash memory particle based on the performance test tool to obtain a performance test report for the flash memory particle; When the performance information in the performance test report meets the performance information corresponding to the life cycle of the flash memory particle, the relevant characteristic values ​​of other flash memory particles in the same life cycle are updated based on the modified target value of the flash memory particle.

9. A flash memory particle processing device, characterized in that: The processing device of the flash memory particles comprises: a memory, a processor, and a computer program stored in the memory and executable on the processor, wherein the computer program is configured to implement the steps of the processing method of the flash memory particles according to any one of claims 1 to 8.

10. A storage medium, characterized in that: The storage medium is a computer-readable storage medium, and a computer program is stored on the storage medium. When the computer program is executed by a processor, the steps of the method for processing flash memory particles according to any one of claims 1 to 8 are implemented.

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