Air exhaust ring assembly and thin film deposition equipment and method

Abstract

The invention provides an air exhaust ring assembly, thin film deposition equipment and a thin film deposition method. The air exhaust ring assembly comprises an air exhaust channel ring, an annular cover plate and an air exhaust panel. The air exhaust channel ring is installed on the upper portion of the side wall of the thin film deposition equipment so as to form the back face and the bottom face of the air exhaust channel. And the annular cover plate covers the air exhaust channel ring so as to form the top surface of the air exhaust channel. The outer edge of the annular cover plate is concentric with a wafer tray of the thin film deposition equipment, and the inner edge of the annular cover plate keeps an eccentric distance with the wafer tray. The air exhaust panel is installed on the periphery of the wafer tray through the inner edge of the annular cover plate so as to form the front face, facing the wafer tray, of the air exhaust channel. A plurality of air exhaust holes are formed in the air exhaust panel, the eccentric distance is kept between the air exhaust panel and the wafer tray, and the air exhaust panel is used for exhausting air from the upper portion of the wafer tray in a differentiated mode so as to adjust the edge film thickness distribution of wafers borne by the wafer tray.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor device processing, and in particular to an exhaust ring component, a thin film deposition device, and a thin film deposition method. Background Art

[0002] In the field of semiconductor device processing, the uniformity of the film and the distribution of film thickness directly affect the performance and production efficiency of semiconductor devices. During the thin film deposition process, the thickness of the film is usually thinner in the center and thicker in the edge. This uneven film thickness phenomenon is particularly obvious at the edge of the wafer, which usually leads to a large fluctuation range of the edge film thickness, and even high and low points with significant differences in film thickness. However, in the prior art, the ceramic cover plate, vacuum ring and other ceramic parts inside the process chamber are designed as concentric structures with inner and outer diameters. After installation, the relative position of the ceramic parts and the edge of the wafer tray remains fixed, and the film thickness distribution at the edge of the wafer cannot be adjusted by adjusting the position of the ceramic parts. Especially when the edge film thickness of the wafer fluctuates over a large range and has obvious high and low points, the traditional vacuum ring cannot adjust the distribution of the plasma field at the edge of the wafer, which seriously affects the film quality of the wafer.

[0003] In order to overcome the above-mentioned defects of the prior art, the art urgently needs an improved vacuum ring assembly for adjusting the distance between the inner side of the vacuum ring assembly and the wafer tray, thereby adjusting the film thickness at the edge of the wafer to improve the uniformity of the thin film deposited on the wafer surface. Summary of the invention

[0004] A brief summary of one or more aspects is given below to provide a basic understanding of these aspects. This summary is not an exhaustive overview of all conceived aspects, and is neither intended to identify the key or decisive elements of all aspects nor to define the scope of any or all aspects. Its only purpose is to give some concepts of one or more aspects in a simplified form as a prelude to a more detailed description that will be given later.

[0005] In order to overcome the above-mentioned defects of the prior art, the present invention provides an exhaust ring assembly, a thin film deposition device and a thin film deposition method, which can adjust the distance between the inner side of the exhaust ring assembly and the wafer tray by setting an annular cover plate whose inner edge has a fixed eccentricity with the wafer tray, thereby adjusting the film thickness at the edge of the wafer to improve the uniformity of the thin film deposited on the wafer surface.

[0006] Specifically, the above-mentioned exhaust ring assembly provided according to the first aspect of the present invention includes an exhaust channel ring, an annular cover plate and an exhaust panel. The exhaust channel ring is installed on the upper part of the side wall of the thin film deposition equipment to form the back and bottom surfaces of the exhaust channel. The annular cover plate covers the exhaust channel ring to form the top surface of the exhaust channel. The outer edge of the annular cover plate is concentric with the wafer tray of the thin film deposition equipment, while its inner edge maintains an eccentricity with the wafer tray. The exhaust panel is installed on the periphery of the wafer tray via the inner edge of the annular cover plate to form the front of the exhaust channel toward the wafer tray. The exhaust panel is provided with a plurality of exhaust holes and maintains the eccentricity with the wafer tray, so as to differentially exhaust air from the top of the wafer tray to adjust the edge film thickness distribution of the wafer carried by the wafer tray.

[0007] Furthermore, in some embodiments of the present invention, two first positioning parts are provided on the upper surface of the exhaust channel ring. Three or more second positioning parts are provided at corresponding positions on the lower surface of the outer edge of the annular cover plate. The annular cover plate is rotated to a corresponding angle according to the distribution of the film thickness at the edge of the wafer, and the annular cover plate is installed on the exhaust channel ring via the two second positioning parts aligned with the two first positioning parts, and then the exhaust panel is eccentrically installed on the periphery of the wafer tray via the inner edge of the annular cover plate, so as to correct the film thickness at the edge of the wafer in the subsequent thin film deposition process.

[0008] Furthermore, in some embodiments of the present invention, the upper surface of the exhaust channel ring is provided with three or more first positioning parts. Two second positioning parts are provided at corresponding positions on the lower surface of the outer edge of the annular cover plate. The annular cover plate is rotated to a corresponding angle according to the distribution of the film thickness at the edge of the wafer, and the annular cover plate is installed on the exhaust channel ring via the two first positioning parts aligned with the two second positioning parts, and then the exhaust panel is eccentrically installed on the periphery of the wafer tray via the inner edge of the annular cover plate, so as to correct the film thickness at the edge of the wafer in the subsequent thin film deposition process.

[0009] Furthermore, in some embodiments of the present invention, one of the first positioning portion and the second positioning portion is a positioning hole, and the other is a positioning pin.

[0010] Furthermore, in some embodiments of the present invention, the exhaust ring assembly includes a plurality of annular cover plates, the inner edges of which have different eccentricities and are selectively mounted on the exhaust channel ring according to the film thickness of the wafer edge.

[0011] In addition, the above-mentioned thin film deposition equipment provided according to the second aspect of the present invention includes a process chamber, a gas source and a vacuum mechanism. The process chamber includes a shower head, a wafer tray, and an exhaust ring assembly as provided in the first aspect of the present invention. The gas source is at least used to provide at least one process gas required for the thin film deposition process to the wafer carried by the wafer tray through the shower head. The vacuum mechanism is at least used to eccentrically extract exhaust gas from the inside of the process chamber through the exhaust ring assembly during the thin film deposition process.

[0012] Furthermore, in some embodiments of the present invention, the thin film deposition equipment further comprises a radio frequency coil or a remote plasma system. The radio frequency coil surrounds the top surface and / or side surface of the process chamber to cooperate with the radio frequency electrode integrated in the wafer tray to excite in-situ plasma inside the process chamber to perform the thin film deposition process. The remote plasma system is used to inject remote plasma into the process chamber to perform the thin film deposition process.

[0013] Furthermore, in some embodiments of the present invention, the thin film deposition device further comprises a rotating mechanism. The rotating mechanism is used to rotate the wafer tray according to the film thickness distribution at the edge of the wafer before or during the thin film deposition process, so as to correct the film thickness at the edge of the wafer during the thin film deposition process.

[0014] Furthermore, in some embodiments of the present invention, the thin film deposition equipment also includes a controller, which is configured to: obtain the actual film thickness distribution and the target film thickness distribution of the wafer edge, and determine the deposition thickness distribution of the wafer edge by the thin film deposition process based on the difference between the two; determine the position of the maximum value according to the deposition thickness distribution; and rotate the wafer tray to rotate the position of the maximum value to the direction farthest from the vacuum ring assembly to the center of the wafer tray, so as to correct the film thickness of the wafer edge in the thin film deposition process.

[0015] In addition, the above-mentioned thin film deposition method provided according to the third aspect of the present invention includes the following steps: obtaining the actual film thickness distribution of a wafer edge and its corresponding target film thickness distribution, and determining the deposition thickness distribution of the wafer edge by the thin film deposition process based on the difference between the two; determining the position of the maximum value therein based on the deposition thickness distribution; rotating the vacuum ring assembly and / or wafer tray of the thin film deposition equipment provided by the second aspect of the present invention, and rotating the position of the maximum value to the direction farthest from the vacuum ring assembly to the center of the wafer tray, so as to correct the film thickness of the wafer edge in the thin film deposition process. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] The above features and advantages of the present invention can be better understood after reading the detailed description of the embodiments of the present disclosure in conjunction with the following drawings. In the drawings, the components are not necessarily drawn to scale, and components with similar related properties or features may have the same or similar reference numerals.

[0017] Figure 1 A schematic structural diagram of an air pumping ring assembly provided according to some embodiments of the present invention is shown.

[0018] Figure 2 A simplified schematic diagram of the structure of the outer edge and the inner edge of the annular cover plate provided according to some embodiments of the present invention is shown.

[0019] Figure 3 A schematic structural diagram of an air extraction channel ring provided according to some embodiments of the present invention is shown.

[0020] Figure 4 A schematic structural diagram of an annular cover plate provided according to some embodiments of the present invention is shown.

[0021] Figure 5 A schematic top view of the structure of a wafer tray and an exhaust ring assembly provided according to some embodiments of the present invention is shown.

[0022] Figure 6 A schematic flow chart of a thin film deposition method provided according to some embodiments of the present invention is shown.

[0023] Figure 7 A diagram showing the electron density distribution inside a thin film deposition device provided according to some embodiments of the present invention is shown.

[0024] Reference numerals:

[0025] 11. Exhaust channel ring

[0026] 111 First positioning unit

[0027] 12 Ring cover

[0028] 121 Second positioning unit

[0029] 13 Exhaust panel

[0030] 131 Exhaust hole

[0031] 21 Wafer tray DETAILED DESCRIPTION

[0032] The following specific embodiments illustrate the implementation of the present invention, and those skilled in the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification. Although the description of the present invention will be introduced in conjunction with the preferred embodiment, this does not mean that the features of this invention are limited to this implementation. On the contrary, the purpose of introducing the invention in conjunction with the implementation is to cover other options or modifications that may be extended based on the claims of the present invention. In order to provide a deep understanding of the present invention, the following description will include many specific details. The present invention can also be implemented without using these details. In addition, in order to avoid confusion or blurring the focus of the present invention, some specific details will be omitted in the description.

[0033] In the description of the present invention, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be indirectly connected through an intermediate medium, or it can be the internal communication of two components. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0034] In addition, the terms "upper", "lower", "left", "right", "top", "bottom", "horizontal" and "vertical" used in the following description should be understood as the directions shown in the paragraph and the related drawings. Such relative terms are only used for the convenience of description and do not mean that the device described therein must be manufactured or operated in a specific direction, and therefore should not be understood as limiting the present invention.

[0035] It is understood that although the terms "first", "second", "third", etc. may be used herein to describe various components, regions, layers and / or parts, these components, regions, layers and / or parts should not be limited by these terms, and these terms are only used to distinguish different components, regions, layers and / or parts. Therefore, the first component, region, layer and / or part discussed below may be referred to as a second component, region, layer and / or part without departing from some embodiments of the present invention.

[0036] As mentioned above, in the prior art, the ceramic parts such as the ceramic cover plate and the exhaust ring inside the process chamber are designed to be concentric structures with inner and outer diameters. After installation, the relative position of the ceramic parts and the edge of the wafer tray remains fixed, and the film thickness distribution at the edge of the wafer cannot be adjusted by adjusting the position of the ceramic parts. In particular, when the film thickness at the edge of the wafer fluctuates over a large range and has obvious high and low points, the traditional exhaust ring cannot adjust the distribution of the plasma field at the edge of the wafer, which seriously affects the film quality of the wafer.

[0037] In order to overcome the above-mentioned defects of the prior art, the present invention provides an exhaust ring assembly, a thin film deposition device and a thin film deposition method, which can adjust the distance between the inner side of the exhaust ring assembly and the wafer tray by setting an annular cover plate whose inner edge has a fixed eccentricity with the wafer tray, thereby adjusting the film thickness at the edge of the wafer to improve the uniformity of the thin film deposited on the wafer surface.

[0038] In some non-limiting embodiments, the above-mentioned thin film deposition equipment provided in the second aspect of the present invention includes a process chamber, a gas source and a vacuum mechanism. Here, the process chamber includes a shower head, a wafer tray, and an exhaust ring assembly as provided in the first aspect of the present invention. The gas source is at least used to provide at least one process gas required for the thin film deposition process to the wafer carried by the wafer tray through the shower head. The vacuum mechanism is at least used to eccentrically extract exhaust gas from the inside of the process chamber through the exhaust ring assembly during the thin film deposition process.

[0039] In addition, in some preferred embodiments, the above-mentioned thin film deposition equipment provided by the second aspect of the present invention further includes a radio frequency coil or a remote plasma system. Here, the radio frequency coil surrounds the top surface and / or side surface of the process chamber to cooperate with the radio frequency electrode integrated in the wafer tray to excite in-situ plasma inside the process chamber to perform a thin film deposition process. The remote plasma system is used to inject remote plasma into the interior of the process chamber to perform a thin film deposition process.

[0040] In addition, in some preferred embodiments, the above-mentioned thin film deposition device provided by the second aspect of the present invention further includes a rotating mechanism. The rotating mechanism is used to rotate the wafer tray according to the film thickness distribution at the edge of the wafer before or during the thin film deposition process, so as to correct the film thickness at the edge of the wafer during the thin film deposition process.

[0041] In addition, in some optional embodiments, the thin film deposition device provided in the second aspect of the present invention further includes a controller. Here, the controller can be connected to the rotating mechanism to implement the thin film deposition method provided in the third aspect of the present invention.

[0042] Please refer to the following for further reference Figure 1 to Figure 3 . Figure 1 A schematic structural diagram of an air pumping ring assembly provided according to some embodiments of the present invention is shown. Figure 2 A simplified schematic diagram of the structure of the outer edge and the inner edge of the annular cover plate provided according to some embodiments of the present invention is shown. Figure 3 A schematic structural diagram of an air extraction channel ring provided according to some embodiments of the present invention is shown.

[0043] exist Figure 1 to Figure 3In the illustrated embodiment, the above-mentioned exhaust ring assembly provided by the first aspect of the present invention includes an exhaust channel ring 11, an annular cover plate 12 and an exhaust panel 13. Here, the exhaust channel ring 11 is installed on the upper part of the side wall of the thin film deposition device to form the back and bottom surfaces of the exhaust channel. The annular cover plate 12 covers the exhaust channel ring 11 to form the top surface of the exhaust channel. The outer edge of the annular cover plate 12 is concentric with the wafer tray 21 of the thin film deposition device, and its inner edge maintains an eccentricity e with the wafer tray 21. The exhaust panel 13 is installed on the periphery of the wafer tray 21 via the inner edge of the annular cover plate 12 to form the front of the exhaust channel toward the wafer tray 21. A plurality of exhaust holes 131 are provided on the exhaust panel 13, and the eccentricity e is maintained with the wafer tray 21, which is used to differentially exhaust air from the top of the wafer tray 21 to adjust the edge film thickness distribution of the wafer carried by the wafer tray 21.

[0044] Please refer to the following for further reference Figure 4 and Figure 5 . Figure 4 A schematic structural diagram of an annular cover plate provided according to some embodiments of the present invention is shown. Figure 5 A schematic top view of the structure of a wafer tray and an exhaust ring assembly provided according to some embodiments of the present invention is shown.

[0045] exist Figure 4 In the embodiment shown, the upper surface of the exhaust channel ring 11 is provided with two first positioning portions 111. Figure 5 In the embodiment shown, three or more (for example, 12) second positioning portions 121 are provided at corresponding positions on the lower surface of the outer edge of the annular cover plate 12. Here, the annular cover plate 12 is rotated to a corresponding angle according to the distribution of the film thickness at the edge of the wafer, and the annular cover plate 12 is installed on the exhaust channel ring 11 through the two second positioning portions 121 aligned with the two first positioning portions 111, and then the exhaust panel 13 is eccentrically installed on the periphery of the wafer tray 21 through the inner edge of the annular cover plate 12, so as to correct the film thickness at the edge of the wafer in the subsequent thin film deposition process.

[0046] Alternatively, in some optional embodiments, the upper surface of the exhaust channel ring 11 is provided with three or more first positioning portions 111, and the corresponding positions of the lower surface of the outer edge of the annular cover plate 12 are provided with two second positioning portions 121. Here, the annular cover plate 12 is rotated to a corresponding angle according to the distribution of the film thickness at the edge of the wafer, and the annular cover plate 12 is installed on the exhaust channel ring 11 through the two first positioning portions 111 aligned with the two second positioning portions 121, and then the exhaust panel 13 is eccentrically installed on the periphery of the wafer tray 21 through the inner edge of the annular cover plate 12, so as to correct the film thickness at the edge of the wafer in the subsequent thin film deposition process.

[0047] Further, in Figure 4 and Figure 5 In the illustrated embodiment, one of the first positioning portion 111 and the second positioning portion 121 is a positioning hole, and the other is a positioning pin.

[0048] Furthermore, in some preferred embodiments, the above-mentioned pumping ring assembly provided by the first aspect of the present invention includes a plurality of annular cover plates 12. Here, the inner edges of the annular cover plates 12 have different eccentric distances e (for example, 0 to 10 mm), and are selectively installed on the pumping channel ring 11 according to the film thickness of the wafer edge.

[0049] The working principle of the above-mentioned thin film deposition device will be described below in conjunction with some embodiments of the thin film deposition method. Those skilled in the art will understand that these embodiments of the thin film deposition method are only some non-limiting implementation methods provided by the present invention, which are intended to clearly demonstrate the main concept of the present invention and provide some specific solutions that are convenient for the public to implement, rather than to limit all functions or all working modes of the thin film deposition device. Similarly, the thin film deposition device is only a non-limiting implementation method provided by the present invention, and does not constitute a limitation on the execution subject or execution order of each step in these thin film deposition methods.

[0050] Please refer to Figure 6 . Figure 6 A schematic flow chart of a thin film deposition method provided according to some embodiments of the present invention is shown.

[0051] like Figure 6 As shown, the above-mentioned thin film deposition equipment provided by the second aspect of the present invention can obtain the actual film thickness distribution of a wafer edge and its corresponding target film thickness distribution, and determine the deposition thickness distribution of the wafer edge by the thin film deposition process based on the difference between the two.

[0052] Specifically, in the above-mentioned thin film deposition process, there are product correction process scenarios in which the actual film thickness distribution is uneven but the target film thickness distribution is uniform, customized process scenarios in which the actual film thickness distribution is uniform but the target film thickness distribution is uneven, and error compensation process scenarios in which both the actual film thickness distribution and the target film thickness distribution are uniform but the film deposition rate is uneven.

[0053] Afterwards, the thin film deposition equipment can determine the location of the maximum value based on the deposition thickness distribution.

[0054] Thereafter, the thin film deposition equipment can rotate the vacuum ring assembly and / or the wafer tray 21 to rotate the position of the maximum value to the direction farthest from the vacuum ring assembly to the center of the wafer tray 21, so as to correct the film thickness at the edge of the wafer during the thin film deposition process.

[0055] Thereafter, the thin film deposition equipment may perform a thin film deposition process on the wafer carried by the wafer tray 21 so that the edge thereof reaches the target film thickness distribution.

[0056] Please refer to Figure 7 . Figure 7 A diagram showing the electron density distribution inside a thin film deposition device provided according to some embodiments of the present invention is shown.

[0057] like Figure 7 As shown, the second aspect of the present invention provides a thin film deposition device with a high uniformity of electron density inside. Thus, the present invention can adjust the film thickness at the edge of the wafer according to the distribution of the film thickness on the wafer surface during the thin film deposition process by eccentrically setting the inner edge of the annular cover plate 12 and the wafer tray 21, so as to improve the uniformity of the thin film deposited on the wafer surface.

[0058] In summary, the above-mentioned vacuum ring assembly, thin film deposition equipment and thin film deposition method provided by the present invention focus on setting an annular cover plate with a fixed eccentricity between the inner edge and the wafer tray to adjust the distance between the inner side of the vacuum ring assembly and the wafer tray, and then adjust the film thickness at the edge of the wafer to improve the uniformity of the thin film deposited on the wafer surface.

[0059] Although the above methods are illustrated and described as a series of actions for simplicity of explanation, it should be understood and appreciated that these methods are not limited by the order of the actions, because according to one or more embodiments, some actions may occur in a different order and / or concurrently with other actions from those illustrated and described herein or not illustrated and described herein but understandable to those skilled in the art.

[0060] Those skilled in the art will appreciate that information, signals, and data may be represented using any of a variety of different technologies and techniques. For example, data, instructions, commands, information, signals, bits, symbols, and chips cited throughout the above description may be represented by voltage, current, electromagnetic waves, magnetic fields or magnetic particles, optical fields or optical particles, or any combination thereof.

[0061] Those skilled in the art will further appreciate that the various illustrative logic blocks, modules, circuits, and algorithm steps described in conjunction with the embodiments disclosed herein may be implemented as electronic hardware, computer software, or a combination of the two. To clearly illustrate this interchangeability of hardware and software, various illustrative components, blocks, modules, circuits, and steps are generally described above in terms of their functionality. Whether such functionality is implemented as hardware or software depends on the specific application and the design constraints imposed on the overall system. The technician may implement the described functionality in different ways for each specific application, but such implementation decisions should not be interpreted as resulting in a departure from the scope of the present invention.

[0062] The steps of the method or algorithm described in conjunction with the embodiments disclosed herein may be embodied directly in hardware, in a software module executed by a processor, or in a combination of the two. The software module may reside in a RAM memory, a flash memory, a ROM memory, an EPROM memory, an EEPROM memory, a register, a hard disk, a removable disk, a CD-ROM, or any other form of storage medium known in the art. An exemplary storage medium is coupled to a processor so that the processor can read and write information from / to the storage medium. In an alternative, a storage medium may be integrated into a processor. The processor and the storage medium may reside in an ASIC. The ASIC may reside in a user terminal. In an alternative, the processor and the storage medium may reside in a user terminal as discrete components.

[0063] In one or more exemplary embodiments, the functions described may be implemented in hardware, software, firmware, or any combination thereof. If implemented as a computer program product in software, each function may be stored on or transmitted by a computer-readable medium as one or more instructions or codes. Computer-readable media include both computer storage media and communication media, including any medium that facilitates the transfer of a computer program from one place to another. Storage media may be any available medium that can be accessed by a computer. As an example and not limitation, such a computer-readable medium may include RAM, ROM, EEPROM, CD-ROM or other optical disk storage, disk storage or other magnetic storage device, or any other medium that can be used to carry or store the desired program code in the form of an instruction or data structure and can be accessed by a computer. Any connection is also properly referred to as a computer-readable medium. For example, if the software is transmitted from a website, a server, or other remote source using a coaxial cable, a fiber optic cable, a twisted pair, a digital subscriber line (DSL), or wireless technologies such as infrared, radio, and microwaves, the coaxial cable, fiber optic cable, twisted pair, DSL, or wireless technologies such as infrared, radio, and microwaves are included in the definition of the medium. Disk and disc as used herein include compact disc (CD), laser disc, optical disc, digital versatile disc (DVD), floppy disk and Blu-ray disc, wherein disk often reproduces data magnetically, while disc reproduces data optically with lasers. Combinations of the above should also be included within the scope of computer-readable media.

[0064] The previous description of the disclosure is provided to enable any person skilled in the art to make or use the disclosure. Various modifications to the disclosure will be apparent to those skilled in the art, and the general principles defined herein may be applied to other variations without departing from the spirit or scope of the disclosure. Thus, the disclosure is not intended to be limited to the examples and designs described herein, but should be granted the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A pumping ring assembly, characterized in that: include: An exhaust channel ring is installed on the upper part of the side wall of the thin film deposition device to form the back and bottom surfaces of the exhaust channel; an annular cover plate, covering the exhaust channel ring to form the top surface of the exhaust channel, wherein the outer edge of the annular cover plate is concentric with the wafer tray of the thin film deposition device, and the inner edge thereof maintains an eccentric distance with the wafer tray; and An exhaust panel is installed on the periphery of the wafer tray via the inner edge of the annular cover to form the exhaust channel facing the front of the wafer tray, wherein the exhaust panel is provided with a plurality of exhaust holes and maintains the eccentric distance with the wafer tray for differentially exhausting air from above the wafer tray to adjust the edge film thickness distribution of the wafer carried by the wafer tray.

2. The pumping ring assembly according to claim 1, characterized in that: The upper surface of the air extraction channel ring is provided with two first positioning parts, and the corresponding positions of the lower surface of the outer edge of the annular cover plate are provided with more than three second positioning parts. The annular cover plate is rotated to a corresponding angle according to the distribution of the film thickness at the edge of the wafer, and is installed on the exhaust channel ring through the two second positioning parts aligned with the two first positioning parts, and then the exhaust panel is eccentrically installed on the periphery of the wafer tray through the inner edge of the annular cover plate to correct the film thickness at the edge of the wafer in the subsequent thin film deposition process.

3. The pumping ring assembly according to claim 1, characterized in that: The upper surface of the air extraction channel ring is provided with more than three first positioning parts, and the corresponding positions of the lower surface of the outer edge of the annular cover plate are provided with two second positioning parts. The annular cover plate is rotated to a corresponding angle according to the distribution of the film thickness at the edge of the wafer, and is installed on the exhaust channel ring through the two first positioning portions aligned with the two second positioning portions, and then the exhaust panel is eccentrically installed on the periphery of the wafer tray through the inner edge of the annular cover plate to correct the film thickness at the edge of the wafer in the subsequent thin film deposition process.

4. The air pumping ring assembly according to claim 2 or 3, characterized in that: One of the first positioning portion and the second positioning portion is a positioning hole, and the other is a positioning pin.

5. The pumping ring assembly according to claim 1, characterized in that: The exhaust ring assembly includes a plurality of annular cover plates, wherein the inner edges of the annular cover plates have different eccentricities and are selectively installed on the exhaust channel ring according to the film thickness of the wafer edge.

6. A thin film deposition device, characterized in that: include: A process chamber comprising a shower head, a wafer tray, and an exhaust ring assembly as claimed in any one of claims 1 to 5; A gas source, at least for providing at least one process gas required for a thin film deposition process to the wafer carried by the wafer tray via the shower head; as well as The vacuum mechanism is used to eccentrically extract exhaust gas from the interior of the process chamber via the exhaust ring assembly at least during the thin film deposition process.

7. The thin film deposition device according to claim 6, characterized in that: Also includes: A radio frequency coil, surrounding the top surface and / or side surface of the process chamber, to cooperate with the radio frequency electrode integrated in the wafer tray, to excite in-situ plasma inside the process chamber, so as to perform the thin film deposition process; or The remote plasma system is used to inject remote plasma into the process chamber to perform the thin film deposition process.

8. The thin film deposition device according to claim 6, characterized in that: Also includes: The rotating mechanism is used to rotate the wafer tray according to the film thickness distribution at the edge of the wafer before or during the thin film deposition process, so as to correct the film thickness at the edge of the wafer during the thin film deposition process.

9. The thin film deposition device according to claim 8, characterized in that: The thin film deposition device also includes a controller configured to: Obtaining an actual film thickness distribution and a target film thickness distribution at the edge of the wafer, and determining a deposition thickness distribution of the film deposition process on the edge of the wafer based on a difference between the actual film thickness distribution and the target film thickness distribution; According to the deposition thickness distribution, determining the position of the maximum value therein; as well as The wafer tray is rotated to rotate the position of the maximum value to a direction where the vacuum ring assembly is farthest from the center of the wafer tray, so as to correct the film thickness at the edge of the wafer during the film deposition process.

10. A thin film deposition method, characterized in that: The following steps are involved: Obtaining an actual film thickness distribution at an edge of a wafer and a corresponding target film thickness distribution, and determining a deposition thickness distribution of the film deposition process on the edge of the wafer based on a difference between the actual film thickness distribution and the target film thickness distribution; According to the deposition thickness distribution, determining the position of the maximum value therein; Rotate the vacuum ring assembly and / or wafer tray of the thin film deposition equipment as described in any one of claims 6 to 9, and rotate the position of the maximum value to the direction farthest from the vacuum ring assembly to the center of the wafer tray, so as to correct the film thickness at the edge of the wafer during the thin film deposition process.

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