X-ray measurement system applied to semiconductor critical dimension measurement

Abstract

The invention relates to the technical field of semiconductor critical dimension measurement, and particularly provides an X-ray measurement system applied to semiconductor critical dimension measurement, which comprises a CD-SAXS measurement system and an XRR measurement system which are compatible, a common sample table, a sample table, an XRR operation system and an SAXS operation system, measurement points of the CD-SAXS measurement system and the XRR measurement system are the same and are located on a common sample table, reflectivity signals of a semiconductor sample are collected in real time through the XRR measurement system, key information such as electron density and film layer period of the semiconductor sample is obtained through the XRR operation system according to the reflectivity signals, and the information serves as priori knowledge to be shared to the SAXS operation system. And the CD-SAXS operation system calculates the HAR structure size of the semiconductor sample according to the scattering signal acquired by the CD-SAXS measurement system and priori knowledge. According to the method, in the CD-SAXS measurement process, the reflectivity information of the same measurement point is synchronously obtained at the same time, priori knowledge is provided for CD-SAXS measurement, and the calculation accuracy of a CD-SAXS measurement system model is effectively improved.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor key dimension measurement, and specifically provides an X-ray measurement system applied to semiconductor key dimension measurement. Background Art

[0002] Critical Dimension Small Angle X-ray Scattering (CD-SAXS) is a variable-angle transmission SAXS measurement technology. X-rays are scattered from periodic nanostructures, which can non-destructively determine the precise size and shape of the structure. However, the detector system of existing CD-SAXS measurement equipment can only obtain the intensity information of scattered X-rays, and lacks the phase information of scattered X-rays. As shown in the following formula:

[0003] Where A(Q) is the scattering amplitude; ρ(r) is the electron density distribution function of the nanomaterial, which is related to the structure of the material to be measured; Q is the scattering vector, which is related to the angular distribution of the X-ray scattering signal; I(Q) is the intensity of the scattered X-ray, which is the signal read from the detector component of the CD-SAXS measurement equipment, r represents the spatial position vector, V represents the scattering volume, i Is an imaginary unit.

[0004] It can be seen from the above formula that the intensity of the scattered X-rays I(Q) is the square of the scattering amplitude A(Q), so there is no phase information of the scattered X-rays in I(Q), that is, the measurement information of the CD-SAXS device lacks phase information. Therefore, the structural information ρ(r) of the material to be tested cannot be calculated and solved by I(Q) through inverse Fourier transform. In order to overcome this phase missing problem, the CD-SAXS measurement technology needs to solve the structure of the nanomaterial to be tested through the method of numerical model fitting. The so-called numerical model fitting solution method is to construct a numerical simulation model of the sample to be tested and a numerical simulation model of small-angle X-ray scattering, and iteratively calculate the parameters characterizing the internal structure of the sample in the numerical simulation model of the sample to be tested through the numerical simulation model of small-angle X-ray scattering, and use the regression algorithm to make the numerical simulation results obtained by the numerical simulation model of small-angle X-ray scattering have a good fitting effect with the actual measurement results of the CD-SAXS device.

[0005] However, the iterative fitting calculation of the CD-SAXS accurate numerical simulation model requires some key prior knowledge, such as the approximate morphological parameters of the nanostructure to be measured, the electron density of the film layer, the film period, etc. At present, these key prior knowledge depends on the film growth process engineer based on the process flow record data. However, due to the changes in the raw materials of the thin film during etching and storage and the changes in deposition conditions, oxidation, etc., the stress and composition of the film structure will be slightly changed. These factors will lead to changes in key parameters such as electron density and film period. In principle, CD-SAXS technology lacks quantitative analysis of material changes. If the iterative fitting calculation of the CD-SAXS numerical simulation model still relies on the prior knowledge that may have changed provided by the process flow record data, it will lead to relatively large errors in the key dimensions and heights obtained by the numerical simulation model. Summary of the invention

[0006] In order to solve the above problems, the present invention provides an X-ray measurement system for semiconductor key dimension measurement, and the CD-SAXS measurement system and the XRR measurement system are designed to be compatible, so that XRR measurement and CD-SAXS measurement can be performed on semiconductor samples simultaneously and synchronously, and the XRR measurement results are used as the key prior knowledge of CD-SAXS measurement, which greatly improves the accuracy of critical dimension measurement of semiconductor HAR structure.

[0007] The X-ray measurement system for semiconductor key dimension measurement provided by the present invention comprises: an XRR operation system and a SAXS operation system; The XRR operation system obtains the prior knowledge required for CD-SAXS measurement of the sample based on the reflectivity signal obtained by XRR measurement of the sample, and transmits the prior knowledge to the CD-SAXS operation system; The CD-SAXS operation system is used to receive the prior knowledge obtained by the XRR operation system and calculate the CD-SAXS measurement results of the sample based on the scattering signal obtained by CD-SAXS measurement of the sample and the prior knowledge. Preferably, it also includes: a CD-SAXS measurement system, which is used to perform CD-SAXS measurement on the sample to obtain the scattering signal of the sample.

[0008] Preferably, it also includes: an XRR measurement system, which is used to perform XRR measurement on the sample to obtain the reflection signal of the sample.

[0009] Preferably, it also includes: a common sample stage for placing the sample to be measured, and the measurement points of the CD-SAXS measurement system and the XRR measurement system are the same and are located on the common sample stage.

[0010] Preferably, the first X-ray detection light emitted by the CD-SAXS measurement system is transmitted through the sample from the measurement point, and a scattered signal transmitted through the sample is collected.

[0011] Preferably, the second X-ray detection light emitted by the XRR measurement system is reflected by the sample at the measurement point, and a reflectivity signal reflected by the sample is collected.

[0012] Preferably, the CD-SAXS measurement system includes a SAXS light source unit, a SAXS vacuum collimation unit, a SAXS vacuum scattering unit and a SAXS detection unit, wherein the SAXS light source unit is used to provide a first X-ray detection light; the SAXS vacuum collimation unit is used to collimate the first X-ray detection light; the SAXS vacuum scattering unit is used to provide a vacuum transmission path for the transmitted light from the common sample stage to the SAXS detection unit; and the SAXS detection unit is used to detect the scattering intensity and angle of the transmitted light.

[0013] Preferably, the XRR measurement system comprises an XRR light source unit and an XRR detection unit, wherein the XRR light source unit is used to provide a second X-ray detection light; and the XRR detection unit is used to detect a reflectivity signal.

[0014] Preferably, the optical path of the second X-ray detection light projection vector measurement point is perpendicular to the optical path of the first X-ray detection light projection vector measurement point.

[0015] Preferably, the prior knowledge required for CD-SAXS measurement of a sample includes the electron density and / or film period of the sample.

[0016] Compared with the prior art, the present invention can achieve the following beneficial effects: The X-ray measurement system of the present invention can perform XRR measurement and CD-SAXS measurement on the same measurement point of the semiconductor HAR structure simultaneously and synchronously, and the XRR measurement system can share the key information such as the obtained electron density and film layer period as prior knowledge in real time to the SAXS operation system, which can effectively improve the accuracy of the CD-SAXS measurement system model calculation; in addition, the XRR measurement system and the CD-SAXS measurement system share the same Stage system (shared sample stage), which ensures that the measurement points and measurement times of the XRR measurement and the CD-SAXS measurement are the same, avoids the transfer of the measured semiconductor between different systems, and simplifies the semiconductor key dimension measurement process.

[0017] The present invention adopts CD-SAXS non-destructive measurement technology to measure the parameters of the HAR structure of the semiconductor. By providing high-resolution, non-destructive three-dimensional shape measurement, it reduces the dependence on long-period, destructive measurement methods, and can perform measurements without destroying the sample, which is particularly important for high-value samples or applications on production lines. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] Figure 1 1 is a schematic diagram of an X-ray measurement system for semiconductor critical dimension measurement according to an embodiment of the present invention.

[0019] Reference numerals include: CD-SAXS measurement system 1, SAXS light source unit 11, SAXS vacuum collimation unit 12, SAXS vacuum scattering unit 13, SAXS detection unit 14; XRR measurement system 2, XRR light source unit 21, XRR detection unit 22; Common sample stage 3, XRR operation system 4, SAXS operation system 5. DETAILED DESCRIPTION

[0020] In order to make the purpose, technical scheme and advantages of the invention clearer, the invention is further described in detail below in conjunction with the accompanying drawings and specific embodiments. It should be understood that the specific embodiments described herein are only used to explain the invention and do not constitute a limitation to the invention. Similar components in different embodiments use associated similar component numbers. In the following embodiments, many detailed descriptions are to enable the invention to be better understood. However, those skilled in the art can easily recognize that some of the features can be omitted in different situations, or can be replaced by other components, materials, and methods. In some cases, some operations related to the invention are not shown or described in the specification, in order to avoid the core part of the invention being overwhelmed by too much description, and for those skilled in the art, it is not necessary to describe these related operations in detail, and they can fully understand the related operations according to the description in the specification and the general technical knowledge in the art.

[0021] It should be noted that, in the absence of conflict, the embodiments of the present invention and the features in the embodiments can be combined with each other to form various implementation methods. At the same time, the steps or actions in the method description can also be interchanged or adjusted in a manner that is obvious to those skilled in the art. Therefore, the various sequences in the specification and the drawings are only for the purpose of clearly describing a certain embodiment and are not meant to be a necessary sequence, unless otherwise specified that a certain sequence must be followed.

[0022] In the description of the invention, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", etc., indicating the orientation or position relationship, are based on the orientation or position relationship shown in the drawings, and are only for the convenience of describing the invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the invention. In addition, the terms "first", "second", etc. are only used for descriptive purposes, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Therefore, the features defined as "first", "second", etc. may explicitly or implicitly include one or more of the features. In the description of the invention, unless otherwise specified, the meaning of "multiple" is two or more.

[0023] In the description of the invention, it should be noted that, unless otherwise clearly specified and limited, the terms "installation", "connection" and "connection" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be indirectly connected through an intermediate medium, or it can be the internal communication of two components. For ordinary technicians in this field, the specific meanings of the above terms in the invention can be understood according to specific circumstances.

[0024] The present invention will be described in detail below with reference to the accompanying drawings and in combination with embodiments.

[0025] See also Figure 1In one embodiment of the present invention, an X-ray measurement system for semiconductor critical dimension measurement is provided. By combining the critical dimension small-angle X-ray scattering technology with the X-ray reflectivity measurement technology, the XRR measurement results are shared as prior information with the CD-SAXS measurement, thereby achieving simultaneous and synchronous XRR measurement and CD-SAXS measurement of the same measurement point, and improving the measurement accuracy of the complex HAR stacking structure of the 3D NAND device. The X-ray measurement system specifically includes: a CD-SAXS measurement system 1, an XRR measurement system 2, a shared sample stage 3, an XRR operation system 4, and a SAXS operation system 5, wherein the shared sample stage 3 is a stage system shared by the CD-SAXS measurement system 1 and the XRR measurement system 2, and the intersection of the optical path of the CD-SAXS measurement system 1 and the optical path of the XRR measurement system 2 is the common sample measurement point of the two systems, and the measurement point is located on the semiconductor sample carried by the shared sample stage 3. Specifically, the common sample stage 3 is a multi-axis precision motion stage that can realize displacement adjustment and rotation in three directions of X, Y and Z. The common sample stage 3 can drive the semiconductor sample placed thereon to perform spatial displacement and rotation around a rotation axis that is perpendicular to the CD-SAXS measurement optical path and the XRR measurement optical path and passes through the measurement point.

[0026] The CD-SAXS measurement system 1 includes: a SAXS light source unit 11, a SAXS vacuum collimation unit 12, a SAXS vacuum scattering unit 13 and a SAXS detection unit 14, which are arranged in sequence along the optical path. The common sample stage 3 is located on the optical path from the SAXS vacuum collimation unit 12 to the SAXS vacuum scattering unit 13. The SAXS light source unit 11 is used to generate a monochromatic X-ray beam with good parallelism. For the sake of ease of description, this beam is named as the first X-ray detection light. It can be understood that the SAXS light source unit 11 can not only include an X-ray light source, but can also be considered to include a front-end beam processing structure, such as a color filter optical element, a beam collimation element, etc.

[0027] After being emitted by the SAXS light source unit 11, the first X-ray detection light enters the SAXS vacuum collimation unit 12 for transmission. The SAXS vacuum collimation unit 12 is mainly composed of a high vacuum cavity and a collimation element. The collimation element can further improve the parallelism of the first X-ray detection light. The high vacuum cavity provides a vacuum transmission environment for the first X-ray detection light to prevent other media such as air from absorbing and scattering the first X-ray detection light.

[0028] After being transmitted through the SAXS vacuum collimation unit 12, the first X-ray detection light is irradiated on the measurement point of the semiconductor sample placed on the common sample stage 3. After being transmitted through the semiconductor sample, the first X-ray detection light is scattered into the SAXS vacuum scattering unit 13, and the first X-ray detection light scattered by the semiconductor sample is recorded as a scattered signal. The SAXS vacuum scattering unit 13 is arranged on the optical path from the common sample stage 3 to the SAXS detection unit 14. The SAXS vacuum scattering unit 14 is also a highly vacuum cavity, and its design purpose is also to provide a highly vacuum transmission environment, reduce the attenuation effect of the transmission medium such as air on the first X-ray detection light during the transmission process, improve the quality of the scattered signal, avoid the partial loss of semiconductor structure information carried by the scattered signal due to medium absorption, and thus improve the accuracy of CD-SAXS measurement.

[0029] Since both the SAXS vacuum collimation unit 12 and the SAXS vacuum scattering unit 13 provide vacuum transmission for the first X-ray detection light, theoretically, the vacuum environment should fully cover the transmission optical path of the first X-ray detection light. However, due to the movement space required by each device unit, full coverage of the transmission optical path cannot be achieved. Therefore, during the design process, it is only necessary to ensure that the vacuum cavity length of the SAXS vacuum collimation unit 12 and the SAXS vacuum scattering unit 13 is as close to the optical path length as possible.

[0030] The scattering signal emitted by the SAXS vacuum scattering unit 13 is transmitted to the SAXS detection unit 14. The SAXS detection unit 14 adopts a two-dimensional array X-ray detector. The SAXS detection unit 14 captures the scattering signal image, which reflects the intensity and angular distribution of the scattering signal of the semiconductor sample.

[0031] After the SAXS detection unit 14 collects the scattering signal image, it transmits the scattering signal image to the SAXS operation system 5, and the SAXS operation system 5 calculates the HAR structural parameters of the 3D NAND according to the scattering data of the received scattering signal image. However, the X-ray scattering data obtained by the CD-SAXS measurement system 1 only has intensity information, but lacks corresponding phase information. Therefore, the HAR structural parameters of the 3D NAND cannot be directly solved by inverse Fourier transform, but need to be solved by constructing a numerical simulation model of the HAR structure of the 3D NAND and a numerical simulation model of small-angle X-ray scattering. Through the numerical simulation model of small-angle X-ray scattering, the parameters characterizing the internal structure of the sample in the numerical simulation model of the HAR structure of the 3D NAND are iteratively calculated, and then the required HAR structural parameters are obtained through a regression algorithm. However, the above-mentioned model simulation and calculation process requires some key prior knowledge of the HAR structure of 3D NAND, such as the electron density and film layer period of the HAR structure. Currently, these key prior knowledge rely on the data recorded in the process flow. However, due to changes in raw materials, deposition conditions, oxidation and other factors of the semiconductor thin film during the preparation process, key parameters such as electron density and film layer period may change. Therefore, the recorded data is not the same as the finished product data of the semiconductor sample finally obtained. Therefore, if the recorded data is still used, it will affect the accuracy of the numerical simulation model, which will lead to errors in the CD-SAXS measurement results output by the SAXS operation system 5.

[0032] In view of the above problems, an embodiment of the present invention sets an XRR measurement system 2 that shares the same stage system (shared sample stage 3) vertically in the optical path of the CD-SAXS measurement system 1, so as to simultaneously and synchronously collect reflectivity information of the same measurement point during the CD-SAXS measurement process. Specifically, the XRR measurement system 2 includes: an XRR light source unit 21 and an XRR detection unit 22 arranged in sequence along the optical path, and the shared sample stage 3 is located on the optical path between the XRR light source unit 21 and the XRR detection unit 22. The shared sample stage 3 is a multi-degree-of-freedom motion platform with high-precision X, Y, and Z motion axes, which can realize translational motion along the X, Y, and Z axes and rotation around the axis, so as to drive the sample to perform angular deflection scanning relative to the axis of the CD-SAXS measurement optical path, and adjust the position of the first X-ray irradiation on the sample through the high-precision motion axis. In addition, the optical path of the XRR measurement system 2 can also be designed in a vacuum to reduce the influence of the transmission medium on the measurement results. The XRR light source unit 21 is used to provide X-rays for XRR measurement, and the X-rays are named as second X-ray detection light. The XRR light source unit 21 is usually composed of an X-ray micro-focus light source and a collimating monochromator. The X-ray micro-focus light source is used to generate a point-divergent X-ray beam, and the collimating monochromator collimates and filters the X-ray beam emitted by it. Among them, the second X-ray detection light and the first X-ray detection light are preferably designed to be perpendicular to each other at the measurement point position, which can achieve the best effect. Considering certain design factors, the second X-ray and the first X-ray can also be designed to be not in a completely vertical state at the measurement point position, and can be tilted positively or negatively by 0 to 2 degrees relative to the vertical state.

[0033] The second X-ray detection light emitted by the XRR light source unit 21 is incident on the measuring point of the semiconductor sample on the common sample stage 3 at a smaller angle. The second X-ray detection light is reflected by the sample at the measuring point to the XRR detection unit 22. The XRR detection unit 22 is composed of a two-dimensional array X-ray detector, which is used to collect the reflectivity signal image of the semiconductor sample and transmit the reflectivity signal image to the XRR operation system 4. The XRR operation system 4 can obtain the film electron density and film thickness period and other data of the semiconductor sample according to the reflectivity signal, and transmit the calculated film electron density and film thickness period and other data as prior knowledge sharing to the SAXS operation system 5. The SAXS operation system 5 calculates the structural parameters of the measurement point position of the semiconductor sample based on the received prior knowledge and the scattering signal synchronously collected by the CD-SAXS measurement system 1. Through the information interaction between the XRR operation system 4 and the SAXS operation system 5, the accuracy of the CD-SAXS measurement results can be effectively improved, and this system can independently complete the complete CD-SAXS measurement and processing process of the semiconductor sample, and the CD-SAXS measurement system 1 and the XRR measurement system 2 can perform CD-SAXS measurement and XRR measurement at the same time, saving measurement time.

[0034] Since the reflectivity signal reflected by the measuring point position needs to be collected by the XRR detection unit 22, it is necessary to ensure that there is an angle between the table surface of the common sample table 3 and the second X-ray detection light, and the angle should be as small as possible to facilitate the XRR detection unit 22 to collect the reflectivity signal. Figure 1 In the embodiment, the incident angle θ is usually between 0° and 5°. Within this angle range, the CD-SAXS measurement system 1 and the XRR measurement system 2 can simultaneously perform CD-SAXS measurement and XRR measurement on the sample on the common sample stage 3 at the same time, synchronously, and at the same measurement point. In addition, the common sample stage 3 can drive the semiconductor sample thereon to rotate around an axis perpendicular to the CD-SAXS measurement optical path and the XRR measurement optical path and passing through the measurement point, and perform angle scanning measurement at a certain angle step, that is, the CD-SAXS measurement system 1 and the XRR measurement system 2 simultaneously collect the scattering signal and reflectivity signal of the semiconductor sample at every certain angle.

[0035] Since the measurement system of the embodiment of the present invention can simultaneously realize CD-SAXS measurement and XRR measurement, the Stage system of CD-SAXS measurement and XRR measurement process is a common sample stage 3, and the measurement point is the same, which avoids the need to transfer between different system devices during CD-SAXS measurement and XRR measurement, avoids the increase of additional XRR measurement time during CD-SAXS measurement, and improves the efficiency of critical dimension measurement of semiconductor structure. When measuring the sample, the first X-ray detection light penetrates the sample measurement point in a transmission manner, and the second X-ray detection light needs to irradiate the measurement point on the sample surface at a small angle and then be reflected by the sample. Therefore, when measuring CD-SAXS, it is necessary to control the common sample stage 3 to drive the sample to rotate around the rotation axis that is perpendicular to the CD-SAXS measurement optical path and the XRR measurement optical path and passes through the measurement point. During the rotation, the SAXS detection unit 14 performs angle scanning measurement at a certain angle step, that is, the sample scattering signal is collected once every certain angle. When the common sample stage 3 is perpendicular to the first X-ray detection light, the spatial angle of the common sample stage 3 is defined as 0 degrees, and the angle scanning range (or the range of the rotation angle of the common sample stage 3) is symmetrical about 0 degrees, that is, the angle scanning range is , usually the angle scanning range is -30°~30°, in addition, there are other angle scanning ranges, such as -25°~25° or -20°~20°, etc. Within this range, the SAXS detection unit 14 will collect a scattering signal image of the sample at every set step angle, and use the scattering signal image to calculate the sample structure parameters. Because the XRR measurement requires that the angle between the second X-ray detection light and the common sample stage 3 is small, therefore, when the angle is large, only CD-SAXS measurement is performed, and XRR measurement is not performed. When the rotation reaches the preset angle range The XRR detection system can collect the sample reflectivity signal while the SAXS detection unit 14 collects the sample scattering image. Under normal circumstances, the preset angle range of XRR measurement is The minimum value of the preset angle range is usually 0°, but the maximum value is sufficient as long as the XRR detection unit 22 can receive the reflected signal. Therefore, it is usually not fixed for different systems. It is understandable that there are , Or other angles. The scanning angle is Within the range, the CD-SAXS measurement optical path and the XRR measurement optical path can simultaneously and synchronously collect scattering images and reflectivity signals for the same measurement point on the sample, without adding additional sample measurement time or transferring the sample. The XRR measurement results can provide a data basis for CD-SAXS measurement and further simulation calculations.

[0036] Although the embodiments of the present invention have been shown and described above, it is understood that the above embodiments are exemplary and cannot be understood as limiting the present invention. Those skilled in the art may change, modify, replace and modify the above embodiments within the scope of the present invention.

[0037] The above specific implementations of the present invention do not constitute a limitation on the protection scope of the present invention. Any other corresponding changes and modifications made based on the technical concept of the present invention should be included in the protection scope of the claims of the present invention.

Claims

1. An X-ray measurement system for semiconductor critical dimension measurement, characterized in that: include: XRR operation system and SAXS operation system; The XRR operation system obtains the prior knowledge required for CD-SAXS measurement of the sample based on the reflectivity signal obtained by XRR measurement of the sample, and transmits the prior knowledge to the CD-SAXS operation system; The CD-SAXS operation system is used to receive the prior knowledge obtained by the XRR operation system, and calculate the CD-SAXS measurement result of the sample based on the scattering signal obtained by CD-SAXS measurement of the sample and the prior knowledge.

2. The X-ray measurement system for semiconductor critical dimension measurement according to claim 1, characterized in that: Also includes: A CD-SAXS measurement system is used to perform CD-SAXS measurement on a sample to obtain a scattering signal of the sample.

3. The X-ray measurement system for semiconductor critical dimension measurement according to claim 2, characterized in that: It also includes: an XRR measurement system, wherein the XRR measurement system is used to perform XRR measurement on the sample to obtain the reflection signal of the sample.

4. The X-ray measurement system for semiconductor critical dimension measurement according to claim 3, characterized in that: Also includes: A common sample stage for placing the sample to be measured, wherein the measuring points of the CD-SAXS measuring system and the XRR measuring system are the same and are located on the common sample stage.

5. The X-ray measurement system for semiconductor critical dimension measurement according to claim 4, characterized in that: The first X-ray detection light emitted by the CD-SAXS measurement system passes through the sample from the measurement point, and collects the scattered signal passing through the sample.

6. The X-ray measurement system for semiconductor critical dimension measurement according to claim 4, characterized in that: The second X-ray detection light emitted by the XRR measurement system is reflected by the sample at the measurement point, and a reflectivity signal reflected by the sample is collected.

7. The X-ray measurement system for semiconductor critical dimension measurement according to claim 5, characterized in that: The CD-SAXS measurement system includes a SAXS light source unit, a SAXS vacuum collimation unit, a SAXS vacuum scattering unit and a SAXS detection unit, wherein the SAXS light source unit is used to provide a first X-ray detection light; the SAXS vacuum collimation unit is used to collimate the first X-ray detection light; the SAXS vacuum scattering unit is used to provide a vacuum transmission path for the transmitted light from the common sample stage to the SAXS detection unit; and the SAXS detection unit is used to detect the scattering intensity and angle of the transmitted light.

8. The X-ray measurement system for semiconductor critical dimension measurement according to claim 6, wherein: The XRR measurement system includes an XRR light source unit and an XRR detection unit, wherein the XRR light source unit is used to provide a second X-ray detection light; and the XRR detection unit is used to detect the reflectivity signal.

9. The X-ray measurement system for semiconductor critical dimension measurement according to claim 8, characterized in that: The optical path of the second X-ray detection light emitting toward the measurement point is perpendicular to the optical path of the first X-ray detection light emitting toward the measurement point.

10. The X-ray measurement system for semiconductor critical dimension measurement according to claim 1, wherein: The prior knowledge required for CD-SAXS measurements of a sample includes the electron density and / or the periodicity of the film.

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