Method and system for testing single TFT (thin film transistor) in liquid crystal display

Abstract

The invention discloses a method and system for testing a single TFT in a liquid crystal display, and the method comprises the steps: obtaining a first through hole position of a source data metal line of the TFT and a first connection position connected with other pixels, and obtaining a second through hole position of a gate metal line of the TFT and a second connection position connected with other pixels; respectively removing the connecting metal at the first connecting position and the second connecting position, respectively removing the ITO material in the via hole at the first via hole position and the second via hole position, and hollowing out the insulating layer material above the drain electrode metal wire; and applying electric signals to the first via hole position, the second via hole position and the drain electrode metal wire at the same time, and detecting the characteristics of the TFT tube. According to the TFT characteristic testing method and device, the accuracy of characteristic testing of the TFT of a single pixel is improved, and the problem that in the prior art, the influence of a common electrode layer and a pixel electrode layer on the characteristics of the TFT is not considered when characteristic testing is carried out on metal sections of a grid layer and a source and drain layer of the TFT, and consequently the testing result is not accurate is solved.

Description

Technical Field

[0001] The present invention relates to the technical field of testing a single TFT tube of a liquid crystal display screen, and in particular to a testing method and system for a single TFT tube in a liquid crystal display screen. Background Art

[0002] Thin Film Transistor-Liquid Crystal Display (TFT-LCD) has the advantages of small size, low power consumption, and no radiation, and has gradually become the mainstream product of flat panel displays. TFT-LCD is formed by the array substrate and the color film substrate, and liquid crystal is dripped between the array substrate and the color film substrate. Among them, gate lines and data lines are formed on the array substrate, and the gate lines and data lines cross to define a number of pixel areas. TFTs and pixel electrodes are formed in the pixel areas, and common electrodes are formed on the color film substrate. TFT-LCD uses the change in the electric field strength between the common electrode on the color film substrate and the pixel electrode on the array substrate to control the orientation of liquid crystal molecules, thereby controlling the intensity of light transmission for image display. The voltage on and off and size on the pixel electrode are controlled by the gate and source signals of the TFT. Therefore, TFT is an important component of TFT-LCD, and the output and transfer characteristics of TFT play a decisive role in the normal operation of TFT-LCD.

[0003] In the design and production process of TFT-LCD, after the array substrate is formed, the TFT characteristics of the display area are often abnormal due to poor analysis in production. Therefore, it is necessary to perform individual analysis and related tests on the characteristics of the TFT on the array substrate to obtain the characteristic parameters and technical data of the TFT, and compare the differences between other normal TFT characteristics, and provide reference and data support for finding the cause of the defect, optimizing the design of the array substrate and the printed circuit board (PCB) signal design.

[0004] In the prior art, when performing a characteristic test on a single TFT tube, only the metal connections between the SD layer and the gate layer and other pixels are cut off, and the characteristics of the TFT tube are obtained by detecting the metal cross section. However, since the array substrate includes a PITO layer, a VITO layer, a SD layer, a gate layer and a PA layer, wherein the PA layer is an insulating layer, when detecting the drain metal, it is necessary to hollow out the upper PA layer to expose the drain metal, and the VITO layer is connected to the SD layer and the gate layer respectively through vias, and some PITO layers are also connected to the gate layer through vias. Therefore, the above detection results are not accurate. Summary of the invention

[0005] In current technology, the characteristics of the metal cross-section of the gate layer and the source and drain layer of the TFT tube are tested without considering the influence of the common electrode layer and the pixel electrode layer on the characteristics of the TFT tube, resulting in inaccurate test results.

[0006] In view of the above problems, a method and system for testing a single TFT tube in a liquid crystal display are proposed. The connection metals at the first connection position and the second connection position are removed respectively to disconnect the source data metal line, the gate metal line and other pixels, and the ITO materials in the vias at the first via hole position and the second via hole position are removed respectively, and the insulating layer material above the drain metal line is hollowed out. At the same time, an electrical signal is applied to the first via hole position, the second via hole position and the drain metal line, thereby improving the accuracy of the characteristic test of the TFT tube of a single pixel, and solving the problem in the prior art that the characteristic test of the metal cross section of the gate layer and the source and drain layer of the TFT tube is performed without considering the influence of the common electrode layer and the pixel electrode layer on the characteristics of the TFT tube, resulting in inaccurate test results.

[0007] In a first aspect, a method for testing a single TFT tube in a liquid crystal display comprises: Step 100, positioning a single TFT tube, obtaining a first via hole position of a source data metal line of the TFT tube and a first connection position connected to other pixels, obtaining a second via hole position of a gate metal line of the TFT tube and a second connection position connected to other pixels; Step 200, respectively clearing the connection metals at the first connection position and the second connection position to disconnect the source data metal line, the gate metal line and other pixels, respectively clearing the ITO material in the via holes at the first via hole position and the second via hole position, and hollowing out the insulating layer material above the drain metal line; Step 300: Apply an electrical signal to the first via hole position, the second via hole position and the drain metal line at the same time to detect the characteristics of the TFT tube.

[0008] In conjunction with the method for testing a single TFT tube in a liquid crystal display according to the first aspect of the present invention, in a first possible implementation manner, step 100 includes: Step 110, locating and acquiring the first via hole position at one end of the source data metal line of the TFT tube of a single pixel; Step 120: locate and determine the first connection position at the other end of the source data metal line of the TFT tube of the single pixel.

[0009] In combination with the first possible implementation manner of the first aspect of the present invention, in a second possible implementation manner, step 100 further includes: Step 130, locating and acquiring the second via hole position at one end of the gate metal line of the TFT tube of a single pixel; Step 140: locate and determine the second connection position at the other end of the gate metal line of the TFT tube of the single pixel.

[0010] In combination with the second possible implementation manner of the first aspect of the present invention, in a third possible implementation manner, step 100 further includes: Step 150, positioning the first connection position of the source data metal line and the second connection position of the gate metal line respectively; Step 160: Mark the first connection position and the second connection position respectively.

[0011] In combination with the third possible implementation manner of the first aspect of the present invention, in a fourth possible implementation manner, between step 100 and step 200, the following steps are included: Step 201: deposit a protective layer on the outer side of the array substrate.

[0012] In combination with the fourth possible implementation manner of the first aspect of the present invention, in a fifth possible implementation manner, step 200 includes: Step 210, initializing the ion beam current parameters and acceleration voltage parameters of the FIB device; Step 220, starting the FIB device to focus the ion beam to the marked first connection position and second connection position; Step 230 : gradually remove the source data metal line metal at the first connection position and the gate line metal at the second connection position through the sputtering effect of the ion beam.

[0013] In combination with the fifth possible implementation manner of the first aspect of the present invention, in a sixth possible implementation manner, step 300 includes: Step 310: Obtain a first test end, a second test end, and a third test end of a test device; Step 320, connecting the first test end, the second test end and the third test end to the source data metal line at the first via hole position, the gate metal line at the second via hole position and the drain metal respectively; Step 330: applying an electrical signal to the TFT tube through the first test terminal, the second test terminal and the third test terminal.

[0014] In a second aspect, a testing system for a single TFT tube in a liquid crystal display comprises: A positioning device, used for positioning a single TFT tube, obtaining a first via hole position of a source data metal line of the TFT tube and a first connection position connected to other pixels, and obtaining a second via hole position of a gate metal line of the TFT tube and a second connection position connected to other pixels; A cleaning device, used to clean the connection metals at the first connection position and the second connection position respectively, so as to disconnect the source data metal line, the gate metal line and other pixels, clean the ITO material in the via holes at the first via hole position and the second via hole position respectively, and hollow out the insulating layer material above the drain metal line; The testing device is used to simultaneously apply an electrical signal to the first via hole position, the second via hole position and the drain metal line to detect the characteristics of the TFT tube.

[0015] In conjunction with the test system for a single TFT tube in a liquid crystal display according to the second aspect of the present invention, in a first possible implementation manner, the positioning device is further used for: Locate and obtain the first via hole position at one end of the source data metal line of the TFT tube of a single pixel, and locate and determine the first connection position at the other end of the source data metal line of the TFT tube of the single pixel; The second via hole position is located at one end of the gate metal line of the TFT tube of a single pixel, and the second connection position is located and determined at the other end of the gate metal line of the TFT tube of the single pixel.

[0016] In conjunction with the test system for a single TFT tube in a liquid crystal display according to the second aspect of the present invention, in a second possible implementation manner, the test device is further used for: The first test terminal, the second test terminal and the third test terminal are respectively connected to the source data metal line at the first via hole position, the gate metal line at the second via hole position and the drain metal, and an electrical signal is applied to the TFT tube through the first test terminal, the second test terminal and the third test terminal.

[0017] The method and system for testing a single TFT tube in a liquid crystal display described in the present invention are implemented, by respectively clearing the connection metals at the first connection position and the second connection position to disconnect the source data metal line, the gate metal line and other pixels, and respectively clearing the ITO materials in the via holes at the first via hole position and the second via hole position, hollowing out the insulating layer material above the drain metal line, and applying an electrical signal to the first via hole position, the second via hole position and the drain metal line at the same time, thereby improving the accuracy of the TFT tube characteristic test of a single pixel, and solving the problem in the prior art that the characteristic test of the metal cross section of the gate layer and the source and drain layer of the TFT tube is performed without considering the influence of the common electrode layer and the pixel electrode layer on the TFT tube characteristics, resulting in inaccurate test results. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] In order to more clearly illustrate the scheme in the present application, a brief introduction is given below to the drawings required for use in the description of the embodiments of the present application. Obviously, the drawings described below are some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0019] Figure 1 It is a flow chart of an embodiment of a method for testing a single TFT tube in a liquid crystal display of the present application; Figure 2 yes Figure 1 A flowchart of a specific implementation of S100; Figure 3 yes Figure 2 A flowchart of a specific implementation method after S120; Figure 4 yes Figure 2 A flowchart of another specific implementation method after S140; Figure 5 yes Figure 1 A flowchart of a specific implementation of S200; Figure 6 yes Figure 1 A flowchart of a specific implementation of S300; Figure 7 It is a structural schematic diagram of an embodiment of a testing system for a single TFT tube in a liquid crystal display of the present application; Figure 8 It is a schematic diagram of the structure of a single TFT tube in a liquid crystal display of the present application; Fig. 9 It is a schematic plan view of a single TFT tube in a liquid crystal display of the present application. DETAILED DESCRIPTION

[0020] The following will be combined with the accompanying drawings in the invention to clearly and completely describe the technical solutions in the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments in the present invention, other embodiments obtained by ordinary technicians in this field without creative work are all within the scope of protection of the present invention.

[0021] Reference to "embodiments" herein means that a particular feature, structure, or characteristic described in conjunction with the embodiments may be included in at least one embodiment of the present application. The appearance of the phrase in various locations in the specification does not necessarily refer to the same embodiment, nor is it an independent or alternative embodiment that is mutually exclusive with other embodiments. It is explicitly and implicitly understood by those skilled in the art that the embodiments described herein may be combined with other embodiments.

[0022] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by technicians in the technical field to which this application belongs; the terms used in the specification of the application are only for the purpose of describing specific embodiments and are not intended to limit this application; the terms "including" and "having" in the specification and claims of this application and the above-mentioned figure descriptions and any variations thereof are intended to cover non-exclusive inclusions.

[0023] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of the features. In the description of this application, the meaning of "plurality" is two or more, unless otherwise clearly and specifically defined.

[0024] In current technology, the metal cross-section of the gate layer and the source and drain layer of the TFT tube 102 is tested for characteristics, without considering the influence of the common electrode layer and the pixel electrode layer on the characteristics of the TFT tube 102, resulting in inaccurate test results.

[0025] In view of the above problems, a method and system for testing a single TFT tube 102 in a liquid crystal display is proposed.

[0026] First, as Figure 1 , Figure 1 This is a flow chart of an embodiment of a method for testing a single TFT tube 102 in a liquid crystal display of the present application; a method for testing a single TFT tube 102 in a liquid crystal display, comprising: S100, positioning a single TFT tube 102, obtaining a first via hole position 1011 of a source data metal line 101 of the TFT tube 102 and a first connection position 1012 connected to other pixels, obtaining a second via hole position 2011 of a gate metal line 201 of the TFT tube 102 and a second connection position 2012 connected to other pixels.

[0027] In this embodiment, an electron microscope or other equipment can be used to accurately locate the connection position of the gate metal line 201 and the connection position of the source data metal line 101 in the TFT tube 102 to determine the specific position and range that need to be removed, providing a clear target area for subsequent FIB processing.

[0028] In a preferred embodiment, Figure 2 , Figure 2 yes Figure 1A flowchart of a specific implementation of S100; S100 includes: S110, locating and obtaining a first via hole position 1011 at one end of a source data metal line 101 of a TFT tube 102 of a single pixel; S120, locating and determining a first connection position 1012 at the other end of a source data metal line 101 of a TFT tube 102 of a single pixel.

[0029] In this embodiment, Figure 8 and Fig. 9 , Figure 8 It is a schematic diagram of the structure of a single TFT tube 102 in a liquid crystal display of the present application. Fig. 9 1 is a schematic diagram of a plan view of a single TFT tube 102 in a liquid crystal display of the present application. The first via hole position 1011 and the first connection position 1012 are respectively the two ends of the source data metal line 101 of the TFT tube 102, wherein the first via hole position 1011 is the position where the source data metal line 101 is connected to the VITO, and the first connection position 1012 is the position where the source data metal line 101 is connected to other pixels. Figure 8 In the figure, 501 is a pixel electrode layer, 601 is an island layer, and the dotted line range is a structural diagram of a single TFT tube 102 .

[0030] In a preferred embodiment, Figure 3 , Figure 3 yes Figure 2 A flowchart of a specific implementation method after S120 in the figure; S100 also includes: S130, locating and obtaining a second via hole position 2011 at one end of the gate metal line 201 of the TFT tube 102 of a single pixel; S140, locating and determining a second connection position 2012 at the other end of the gate metal line 201 of the TFT tube 102 of a single pixel.

[0031] In this embodiment, the second via hole position 2011 and the second connection position 2012 are respectively the two ends of the gate metal line 201 of the TFT tube 102, wherein the second via hole position 2011 is the position where the gate metal line 201 is connected to VITO, and the second connection position 2012 is the position where the gate metal line is connected to other pixels.

[0032] In a preferred embodiment, Figure 4 , Figure 4 yes Figure 2 A flowchart of another specific implementation after S140; S100 also includes: S150, positioning the first connection position 1012 of the source data metal line 101 and the second connection position 2012 of the gate metal line 201 respectively; S160, marking the first connection position 1012 and the second connection position 2012 respectively.

[0033] In this embodiment, the connection position of the gate metal line 201 and the connection position of the source data metal line 101 in the TFT tube 102 are marked to determine the specific position to be cut, thereby providing a clear target area for subsequent FIB processing.

[0034] In a preferred embodiment, between S100 and S200, the following steps are included: S201 , depositing a protective layer on the outer side of the array substrate.

[0035] In this embodiment, a layer of protective material, such as platinum, is deposited on the surface of the array substrate sample to prevent unnecessary damage to other surrounding materials during the FIB processing.

[0036] S200, respectively clear the connection metals at the first connection position 1012 and the second connection position 2012 to disconnect the source data metal line 101 and the gate metal line 201 from other pixels, respectively clear the ITO materials in the via holes at the first via position 1011 and the second via position 2011, and hollow out the insulating layer material above the drain metal line 301.

[0037] In a preferred embodiment, Figure 5 , Figure 5 yes Figure 1 A flowchart of a specific implementation of S200; S200 includes: S210, initializing the ion beam current parameters and acceleration voltage parameters of the FIB device; S220, starting the FIB device, focusing the ion beam to the marked first connection position 1012 and the second connection position 2012; S230, gradually removing the source data metal line 101 metal at the first connection position 1012 and the gate line metal at the second connection position 2012 through the sputtering effect of the ion beam.

[0038] In this embodiment, the ion source in the FIB device generates an ion beam: a liquid metal ion source is usually used, such as liquid gallium. An external electric field is applied to form a fine tip in the liquid gallium, and then the negative electric field is used to pull out the gallium ion beam.

[0039] Ion beam focusing and acceleration: The ion beam is focused by an electric lens, and the size of the ion beam is determined by changing the aperture, and then refocused. At the same time, the ion gun will accelerate the ion beam to form an ion beam with high energy and high beam density to enhance its effect. The focused ion beam bombards the surface of the sample, producing a variety of effects. The first is physical sputtering, where the large mass and high energy of the ions cause them to collide with the sample atoms, transferring energy to sputter the surface atoms, and achieving the cutting of the first connection position 1012 and the second connection position 2012, that is, the removal of the metal at the first connection position 1012 and the second connection position 2012.

[0040] Adjust the relevant parameters of the FIB device, such as ion beam current, acceleration voltage, scanning speed, etc., to ensure that the metal can be effectively removed while minimizing the impact on the underlying semiconductor layer and other structures. Start the FIB device, focus the ion beam to the metal areas of the marked first connection position 1012 and the second connection position 2012 according to the preset parameters and path, and gradually remove the metal of the first connection position 1012 and the second connection position 2012 through the sputtering effect of the ion beam.

[0041] S300 , applying electrical signals to the first via hole position 1011 , the second via hole position 2011 and the drain metal line 301 at the same time, and detecting the characteristics of the TFT tube 102 .

[0042] In a preferred embodiment, Figure 6 , Figure 6 yes Figure 1 A flowchart of a specific implementation of S300 in the embodiment; S300 includes: S310, obtaining a first test terminal 1013, a second test terminal 2013 and a third test terminal 3011 of a test device; S320, connecting the first test terminal 1013, the second test terminal 2013 and the third test terminal 3011 to the source data metal line 101 of the first via hole position 1011, the gate metal line 201 and the drain metal of the second via hole position 2011 respectively; S330, applying an electrical signal to the TFT tube 102 through the first test terminal 1013, the second test terminal 2013 and the third test terminal 3011.

[0043] The connection metals at the first connection position 1012 and the second connection position 2012 are removed respectively to disconnect the source data metal line 101, the gate metal line 201 from other pixels, and the ITO materials in the via holes at the first via hole position 1011 and the second via hole position 2011 are removed respectively, and the insulating layer material above the drain metal line 301 is hollowed out. At the same time, an electric signal is applied to the first via hole position 1011, the second via hole position 2011 and the drain metal line 301, thereby improving the accuracy of the characteristic test of the TFT tube 102 of a single pixel, and solving the problem in the prior art that the characteristic test of the metal cross section of the gate layer and the source and drain layer of the TFT tube 102 is performed without considering the influence of the common electrode layer and the pixel electrode layer on the characteristics of the TFT tube 102, resulting in inaccurate test results.

[0044] Second, as Figure 7 , Figure 7 1 is a schematic diagram of a structure of an embodiment of a test system for a single TFT tube 102 in a liquid crystal display of the present application. A test system for a single TFT tube 102 in a liquid crystal display comprises: A positioning device, used for positioning a single TFT tube 102, obtaining a first via hole position 1011 of a source data metal line 101 of the TFT tube 102 and a first connection position 1012 connected to other pixels, and obtaining a second via hole position 2011 of a gate metal line 201 of the TFT tube 102 and a second connection position 2012 connected to other pixels; A cleaning device is used to clean the connection metals at the first connection position 1012 and the second connection position 2012 respectively, so as to disconnect the source data metal line 101 and the gate metal line 201 from other pixels, clean the ITO material in the via holes at the first via hole position 1011 and the second via hole position 2011 respectively, and hollow out the insulating layer material above the drain metal line 301; The testing device is used to simultaneously apply an electrical signal to the first via hole position 1011 , the second via hole position 2011 and the drain metal line 301 to detect the characteristics of the TFT tube 102 .

[0045] In conjunction with the test system for a single TFT tube 102 in a liquid crystal display according to the second aspect of the present invention, in a first possible implementation manner, the positioning device is further used for: A first via hole position 1011 is located at one end of a source data metal line 101 of a TFT tube 102 of a single pixel, and a first connection position 1012 is located at the other end of the source data metal line 101 of the TFT tube 102 of a single pixel; A second via hole position 2011 is located at one end of the gate metal line 201 of the TFT tube 102 of a single pixel, and a second connection position 2012 is located at the other end of the gate metal line 201 of the TFT tube 102 of a single pixel.

[0046] In conjunction with the test system for a single TFT tube 102 in a liquid crystal display according to the second aspect of the present invention, in a second possible implementation manner, the test device is further used for: The first test terminal 1013, the second test terminal 2013 and the third test terminal 3011 are respectively connected to the source data metal line 101 of the first via hole position 1011, the gate metal line 201 of the second via hole position 2011 and the drain metal, and an electrical signal is applied to the TFT tube 102 through the first test terminal 1013, the second test terminal 2013 and the third test terminal 3011.

[0047] The present invention implements a method and system for testing a single TFT tube 102 in a liquid crystal display. The connection metals at the first connection position 1012 and the second connection position 2012 are removed respectively to disconnect the source data metal line 101, the gate metal line 201 from other pixels, and the ITO materials in the via holes at the first via hole position 1011 and the second via hole position 2011 are removed respectively, and the insulating layer material above the drain metal line 301 is hollowed out. At the same time, an electrical signal is applied to the first via hole position 1011, the second via hole position 2011 and the drain metal line 301, thereby improving the accuracy of the characteristic test of the TFT tube 102 of a single pixel, and solving the problem in the prior art that the characteristic test of the metal cross section of the gate layer and the source and drain layer of the TFT tube 102 is performed without considering the influence of the common electrode layer and the pixel electrode layer on the characteristics of the TFT tube 102, resulting in inaccurate test results.

[0048] The above are only preferred embodiments of the present invention and are not intended to limit the present invention. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present invention should be included in the protection scope of the present invention.

Claims

1. A method for testing a single TFT tube in a liquid crystal display, comprising: Step 100, positioning a single TFT tube, obtaining a first via hole position of a source data metal line of the TFT tube and a first connection position connected to other pixels, obtaining a second via hole position of a gate metal line of the TFT tube and a second connection position connected to other pixels; Step 200, respectively clearing the connection metals at the first connection position and the second connection position to disconnect the source data metal line, the gate metal line and other pixels, respectively clearing the ITO material in the via holes at the first via hole position and the second via hole position, and hollowing out the insulating layer material above the drain metal line; Step 300: Apply an electrical signal to the first via hole position, the second via hole position and the drain metal line at the same time to detect the characteristics of the TFT tube.

2. The method for testing a single TFT tube in a liquid crystal display according to claim 1, characterized in that: The step 100 comprises: Step 110, locating and acquiring the first via hole position at one end of the source data metal line of the TFT tube of a single pixel; Step 120: locate and determine the first connection position at the other end of the source data metal line of the TFT tube of the single pixel.

3. The method for testing a single TFT tube in a liquid crystal display according to claim 2, characterized in that: The step 100 further includes: Step 130, locating and acquiring the second via hole position at one end of the gate metal line of the TFT tube of a single pixel; Step 140: locate and determine the second connection position at the other end of the gate metal line of the TFT tube of the single pixel.

4. The method for testing a single TFT tube in a liquid crystal display according to claim 3, characterized in that: The step 100 further includes: Step 150, positioning the first connection position of the source data metal line and the second connection position of the gate metal line respectively; Step 160: Mark the first connection position and the second connection position respectively.

5. The method for testing a single TFT tube in a liquid crystal display according to claim 4, characterized in that: Between step 100 and step 200, the following steps are included: Step 201: deposit a protective layer on the outer side of the array substrate.

6. The method for testing a single TFT tube in a liquid crystal display according to claim 5, characterized in that: The step 200 comprises: Step 210, initializing the ion beam current parameters and acceleration voltage parameters of the FIB device; Step 220, starting the FIB device to focus the ion beam to the marked first connection position and second connection position; Step 230 : gradually remove the source data metal line metal at the first connection position and the gate line metal at the second connection position through the sputtering effect of the ion beam.

7. The method for testing a single TFT tube in a liquid crystal display according to claim 6, characterized in that: The step 300 includes: Step 310, obtaining a first test end, a second test end, and a third test end of a test device; Step 320, connecting the first test end, the second test end and the third test end to the source data metal line at the first via hole position, the gate metal line at the second via hole position and the drain metal respectively; Step 330: applying an electrical signal to the TFT tube through the first test terminal, the second test terminal and the third test terminal.

8. A testing system for a single TFT tube in a liquid crystal display, using the testing method according to any one of claims 1 to 7, characterized in that: include: A positioning device, used for positioning a single TFT tube, obtaining a first via hole position of a source data metal line of the TFT tube and a first connection position connected to other pixels, and obtaining a second via hole position of a gate metal line of the TFT tube and a second connection position connected to other pixels; A cleaning device, used to clean the connection metals at the first connection position and the second connection position respectively, so as to disconnect the source data metal line, the gate metal line and other pixels, clean the ITO material in the via holes at the first via hole position and the second via hole position respectively, and hollow out the insulating layer material above the drain metal line; The testing device is used to simultaneously apply an electrical signal to the first via hole position, the second via hole position and the drain metal line to detect the characteristics of the TFT tube.

9. The testing system for a single TFT tube in a liquid crystal display according to claim 8, characterized in that: The positioning device is further used for: Locate and obtain the first via hole position at one end of the source data metal line of the TFT tube of a single pixel, and locate and determine the first connection position at the other end of the source data metal line of the TFT tube of the single pixel; The second via hole position is located at one end of the gate metal line of the TFT tube of a single pixel, and the second connection position is located and determined at the other end of the gate metal line of the TFT tube of the single pixel.

10. The testing system for a single TFT tube in a liquid crystal display according to claim 8, characterized in that: The test equipment is further used for: The first test terminal, the second test terminal and the third test terminal are respectively connected to the source data metal line at the first via hole position, the gate metal line at the second via hole position and the drain metal, and an electrical signal is applied to the TFT tube through the first test terminal, the second test terminal and the third test terminal.

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