Magnetic device, magnetic head, and magnetic recording apparatus

Abstract

Provided are a magnetic device, a magnetic head, and a magnetic recording apparatus capable of improving characteristics. According to one embodiment, a magnetic device includes a magnetic element including a first magnetic layer and a second magnetic layer, and a magnetic field generation unit. The magnetic field generating unit is capable of performing a first transition operation and a second transition operation. In the first transition operation, transition is made from a first state in which a first magnetic field is generated to a second state in which a second magnetic field is generated. In the second transition operation, transition is made from the second state to the first state. The first magnetic field includes a first component in a first orientation from the first magnetic layer to the second magnetic layer. The second magnetic field includes a second component in a second orientation from the second magnetic layer to the first magnetic layer.

Description

[0001] This application is based on Japanese Patent Application No. 2023-146097 (filing date September 8, 2023) and claims the priority of the aforementioned application. The present application incorporates the entire contents of the aforementioned application by reference. Technical Field

[0002] Embodiments of the present invention relate to a magnetic device, a magnetic head, and a magnetic recording apparatus. Background Art

[0003] Information is recorded on a magnetic recording medium such as a HDD (Hard Disk Drive) using a magnetic head including a magnetic device. Improvements in the characteristics of magnetic devices, magnetic heads, and magnetic recording devices are desired. Summary of the invention

[0004] Embodiments of the present invention provide a magnetic device, a magnetic head, and a magnetic recording apparatus capable of improving characteristics.

[0005] Technical solutions to solve problems

[0006] According to an embodiment, a magnetic device includes a magnetic element and a magnetic field generating unit, wherein the magnetic element includes a first magnetic layer and a second magnetic layer. The magnetic field generating unit can perform a first transition operation and a second transition operation. In the first transition operation, a transition is made from a first state in which a first magnetic field is generated to a second state in which a second magnetic field is generated. In the second transition operation, a transition is made from the second state to the first state. The first magnetic field includes a first component in a first direction (orientation) from the first magnetic layer to the second magnetic layer. The second magnetic field includes a second component in a second direction from the second magnetic layer to the first magnetic layer.

[0007] According to the magnetic device having the above-described structure, it is possible to provide a magnetic device, a magnetic head, and a magnetic recording apparatus having improved characteristics. BRIEF DESCRIPTION OF THE DRAWINGS

[0008] Figure 1 It is a schematic cross-sectional view illustrating the magnetic device according to the first embodiment.

[0009] Figure 2 (a)~ Figure 2 (c) is a schematic diagram illustrating the operation of the magnetic device according to the first embodiment.

[0010] Figure 3 It is a schematic perspective view illustrating a magnetic recording device according to a second embodiment.

[0011] Figure 4 It is a schematic perspective view illustrating a part of the magnetic recording device according to the second embodiment.

[0012] Figure 5 It is a schematic perspective view illustrating a magnetic recording device according to an embodiment.

[0013] Figure 6 (a) and Figure 6 (b) is a schematic perspective view illustrating a part of the magnetic recording device according to the embodiment.

[0014] Description of Reference Numerals

[0015] 20 Magnetic element; 20D Element circuit; 21, 22 1st and 2nd magnetic layers; 30 Magnetic field generating unit; 30D Recording circuit; 30c Coil; 31, 32 1st and 2nd magnetic poles; 41 1st intermediate layer; 60 Recording unit; 70 Reproducing unit; 71 Magnetic reproducing element; 72a, 72b 1st and 2nd reproducing magnetic shields; 80 Magnetic recording medium; 81 Magnetic recording layer; 82 Medium substrate; 83 Magnetization; 85 Medium moving direction; 101 Magnetic device; 110 Magnetic head; 150 Magnetic recording device; 154 Suspension; 155 Arm; 156 Voice coil motor; 157 Bearing unit; 158 Head gimbal assembly; 159 Head slider; 159A Air inflow side; 159B Air outflow side; 160 Head stack assembly Assembly); 161 supporting frame; 162 coil; 180 recording medium disk; 180M spindle motor; 181 recording medium; 190 signal processing unit; 210 magnetic recording device; AR arrow; D1 first direction; Hx magnetic field; Hx1, Hx2 first and second magnetic fields; Iw recording current; M1, M2 first and second magnetization; MF magnetic field; ST1, ST2 first and second state; TO1, TO2 first and second transition action; d1 distance; f1, f2 first and second oscillation frequency; ft1, ft2 first and second transition action oscillation frequency; ic element current; t1, t2 first and second thickness; tm time. DETAILED DESCRIPTION

[0016] Hereinafter, embodiments of the present invention will be described with reference to the drawings.

[0017] The drawings are schematic or conceptual drawings, and the relationship between the thickness and width of each part, the ratio of the size between parts, etc. are not necessarily the same as the actual ones. Even when the same part is shown, the sizes and ratios of each other may be shown differently depending on the drawings.

[0018] In the present specification and each drawing, the same elements as those described above with respect to the drawings in which they appear are denoted by the same reference numerals, and detailed description thereof will be appropriately omitted.

[0019] (First embodiment)

[0020] Figure 1 It is a schematic cross-sectional view illustrating the magnetic device according to the first embodiment.

[0021] like Figure 1 As shown, the magnetic device 101 according to the embodiment includes a magnetic element 20 and a magnetic field generating unit 30 .

[0022] The magnetic element 20 includes a first magnetic layer 21 and a second magnetic layer 22. In this example, the magnetic element 20 further includes a first intermediate layer 41. The first intermediate layer 41 is disposed between the first magnetic layer 21 and the second magnetic layer 22. The first intermediate layer 41 is, for example, conductive. The first intermediate layer 41 is non-magnetic. The element current ic can flow in the magnetic element 20. The element current ic flows along the stacking direction in the magnetic element 20.

[0023] The first direction D1 from the first magnetic layer 21 to the second magnetic layer 22 is defined as the X-axis direction. A direction perpendicular to the X-axis direction is defined as the Z-axis direction. A direction perpendicular to the X-axis direction and the Z-axis direction is defined as the Y-axis direction. The stacking direction is along the first direction D1.

[0024] The magnetic field generating unit 30 can implement the first transition action and the second transition action described later. In these actions, a magnetic field Hx is generated from the magnetic field generating unit 30. In one example, the magnetic field generating unit 30 may include an electromagnet. For example, the magnetic field generating unit 30 includes a first magnetic pole 31 and a coil 30c. For example, a recording current Iw flows through the coil 30c. A magnetic field Hx corresponding to the recording current Iw is generated from the first magnetic pole 31. The magnetic field Hx is applied to the magnetic element 20.

[0025] Figure 2 (a)~ Figure 2 (c) is a schematic diagram illustrating the operation of the magnetic device according to the first embodiment.

[0026] The horizontal axis of these graphs is time tm. Figure 2 The vertical axis of (a) corresponds to the magnetic field Hx generated by the magnetic field generating unit 30 . Figure 2 The vertical axis of (b) corresponds to the orientation of the first magnetization M1 of the first magnetic layer 21 . Figure 2 The vertical axis of (c) corresponds to the orientation of the second magnetization M2 of the second magnetic layer 22 .

[0027] like Figure 2As shown in (a), the magnetic field generating unit 30 can perform the first transition action TO1 and the second transition action TO2. In the first transition action TO1, the first state ST1 is changed to the second state ST2. In the second transition action TO2, the second state ST2 is changed to the first state ST1. In the first state ST1, the first magnetic field Hx1 is generated. In the second state ST2, the second magnetic field Hx2 is generated.

[0028] like Figure 1 As shown, the first magnetic field Hx1 includes a first component in a first direction from the first magnetic layer 21 to the second magnetic layer 22. The second magnetic field Hx2 includes a second component in a second direction from the second magnetic layer 22 to the first magnetic layer 21. The second direction is opposite to the first direction.

[0029] By performing the first transition action TO1 and the second transition action TO2, the direction of the magnetic field MF emitted from the magnetic element 20 changes. For example, when the magnetic field MF is applied to the magnetic recording medium 80, the magnetization direction of the magnetic recording medium 80 can be changed. Thus, information can be recorded in the magnetic recording medium 80. For example, the magnetic device 101 can be applied to the magnetic head 110. By using the magnetic head 110 including the magnetic device 101, information can be recorded in the magnetic recording medium 80.

[0030] For example, in the above operation, the element current ic flows through the magnetic element 20. The direction of the magnetic field MF generated from the magnetic element 20 changes due to the spins of the magnetic layers and the change in the direction of the magnetic field Hx generated by the magnetic field generating unit 30 due to the element current ic.

[0031] For example, the first magnetic layer 21 is provided between the magnetic field generating unit 30 and the second magnetic layer 22. In the embodiment, the second magnetic layer 22 may be provided between the magnetic field generating unit 30 and the first magnetic layer 21.

[0032] For example, one of the first magnetic layer 21 and the second magnetic layer 22 has positive polarization, and the other of the first magnetic layer 21 and the second magnetic layer 22 has negative polarization.

[0033] In one example, the first magnetic layer 21 includes a first element, and the first element includes at least one selected from Fe, Co, and Ni. The second magnetic layer 22 includes the first element and the second element. The second element includes at least one selected from Cr, V, Mn, Ti, and Sc. The first magnetic layer 21 does not include the second element. Alternatively, the first concentration of the second element in the first magnetic layer 21 is lower than the second concentration of the second element in the second magnetic layer 22. According to such a configuration, the first magnetic layer 21 is likely to have positive polarization, and the second magnetic layer 22 is likely to have negative polarization.

[0034] When the first magnetic layer 21 has positive polarization and the second magnetic layer 22 has negative polarization, the element current ic may have a direction from the first magnetic layer 21 to the second magnetic layer 22. When the second magnetic layer 22 has positive polarization and the first magnetic layer 21 has negative polarization, the element current ic may have a direction from the second magnetic layer 22 to the first magnetic layer 21.

[0035] The changing component (AC component) of the magnetic field MF generated by the magnetic element 20 is Figure 2 (b) and Figure 2 The oscillation frequency of the magnetic field MF corresponds to the oscillation frequency of the first magnetization M1 and the second magnetization M2.

[0036] For example, in the first state ST1, the element current ic flows in the magnetic element 20. In the first state ST1, the first magnetic field Hx1 generated by the magnetic field generating unit 30 is applied to the magnetic element 20. The frequency of the magnetic field MF generated by the magnetic element 20 in the first state ST1 is set to the first oscillation frequency f1. For example, the first oscillation frequency f1 is 10 GHz or less.

[0037] For example, in the second state ST2, the element current ic flows in the magnetic element 20. In the second state ST2, the second magnetic field Hx2 generated by the magnetic field generating unit 30 is applied to the magnetic element 20. The frequency of the magnetic field MF generated by the magnetic element 20 in the second state ST2 is set to the second oscillation frequency f2. For example, the second oscillation frequency f2 is 10 GHz or less.

[0038] In the first transition action TO1, the element current ic flows in the magnetic element 20, and at the same time, the magnetic field Hx generated by the magnetic field generating unit 30 changes from the first magnetic field Hx1 to the second magnetic field Hx2. The oscillation frequency of the magnetic field MF generated by the magnetic element 20 in the first transition action TO1 is set to the first transition action oscillation frequency ft1. The first transition action oscillation frequency ft1 is higher than the first oscillation frequency f1 and higher than the second oscillation frequency f2.

[0039] In the second transition action TO2, the element current ic flows in the magnetic element 20, and at the same time, the magnetic field Hx generated by the magnetic field generating unit 30 changes from the second magnetic field Hx2 to the first magnetic field Hx1. The oscillation frequency of the magnetic field MF generated by the magnetic element 20 in the second transition action TO2 is set to the second transition action oscillation frequency ft2. The second transition action oscillation frequency ft2 is higher than the first oscillation frequency f1 and higher than the second oscillation frequency f2.

[0040] The direction of the magnetic field MF is switched by the first transition operation TO1 and the second transition operation TO2 having a high oscillation frequency. This can change the magnetization of the magnetic recording medium 80 , for example. Target information can be recorded on the magnetic recording medium 80 .

[0041] The first oscillation frequency f1 may be, for example, 1 / 3 or less of the resonance frequency of the magnetic recording medium 80 . The second oscillation frequency f2 may be 1 / 3 or less of the resonance frequency of the magnetic recording medium 80 .

[0042] In the first reference example, a recording magnetic field generated from a magnetic pole is applied to the magnetic recording medium 80, and a high-frequency magnetic field generated from a magnetic element 20 is applied to the magnetic recording medium 80. The high-frequency magnetic field makes it easy for the magnetization of the magnetic recording medium 80 to change, and the magnetization of the magnetic recording medium 80 is controlled to be in a direction corresponding to the recording magnetic field. In the first reference example, for example, MAMR (Microwave Assisted Magnetic Recording) is implemented. In the first reference example, the frequency of the magnetic field MF emitted from the magnetic element 20 is constant.

[0043] In contrast, in the embodiment, the frequency of the magnetic field MF emitted from the magnetic element 20 changes during the transition operation. The magnetization of the magnetic recording medium 80 can be stably changed. For example, a high recording density can be obtained. According to the embodiment, a magnetic device, a magnetic head, and a magnetic recording device with improved characteristics can be provided.

[0044] In the embodiment, the first magnetic layer 21 and the second magnetic layer 22 preferably have negative perpendicular magnetic anisotropy. This makes it easy to obtain a target change in the magnetic field MF.

[0045] The thickness t1 of the first magnetic layer 21 (see Figure 1 ) can be, for example, 5 nm or more and 15 nm or less. The thickness t2 of the second magnetic layer 22 (see Figure 1 ) can be, for example, 5 nm or more and 15 nm or less. Stable operation is easily obtained. These thicknesses are lengths along the first direction D1.

[0046] The distance d1 between the first magnetic layer 21 and the second magnetic layer 22 (see Figure 1 ) can be greater than 2 nm and less than 10 nm. Stable operation is easily obtained. The distance d1 is the length along the first direction D1.

[0047] The first intermediate layer 41 may be in contact with the first magnetic layer 21 and the second magnetic layer 22. For example, the distance d1 corresponds to the thickness of the first intermediate layer 41.

[0048] The first intermediate layer 41 includes, for example, at least one selected from the group consisting of Cu, Al, Au, Ag, and Cr.

[0049] As described above, the first transition operation TO1 and the second transition operation TO2 are performed according to the recording current Iw flowing through the coil 30c. For example, the first transition operation TO1 and the second transition operation TO2 are performed by changing the direction of the recording current Iw.

[0050] The magnetic head 110 according to the embodiment includes the magnetic device 101 according to the embodiment.

[0051] (Second embodiment)

[0052] like Figure 1 As shown, the magnetic recording device 210 involved in the embodiment includes a magnetic head 110 and a magnetic recording medium 80. The first information is recorded in the magnetic recording medium 80 by the first transition action TO1. The second information is recorded in the magnetic recording medium 80 by the second transition action TO2. The second information is different from the first information. The first information is, for example, one of "0" and "1". The second information is the other of "0" and "1".

[0053] The magnetic recording device 210 may further include an element circuit 20D. The element circuit 20D can supply an element current ic to the first magnetic layer 21 and the second magnetic layer 22 in the first transition operation TO1 and the second transition operation TO2. The element circuit 20D can supply an element current ic to the first magnetic layer 21 and the second magnetic layer 22 in the first state ST1 and the second state ST2.

[0054] In one example of the magnetic recording device 210, the first magnetic layer 21 includes a first element, and the first element includes at least one selected from Fe, Co, and Ni. The second magnetic layer 22 includes the first element and the second element. The second element includes at least one selected from Cr, V, Mn, Ti, and Sc. The first magnetic layer 21 does not include the second element. Alternatively, the first concentration of the second element in the first magnetic layer 21 is lower than the second concentration of the second element in the second magnetic layer 22. In this case, the element current ic flows from the first magnetic layer 21 to the second magnetic layer 22.

[0055] In the magnetic recording device 210, in the first state ST1, the first oscillation frequency f1 of the magnetic field MF generated by the magnetic element 20 is 10 GHz or less. In the second state ST2, the second oscillation frequency f2 of the magnetic field MF generated by the magnetic element 20 is 10 GHz or less.

[0056] In the magnetic recording device 210, in the first transition action TO1, the first transition action oscillation frequency ft1 of the magnetic field MF generated from the magnetic element 20 is higher than the first oscillation frequency f1 and higher than the second oscillation frequency f2. In the second transition action TO2, the second transition action oscillation frequency ft2 of the magnetic field MF generated from the magnetic element 20 is higher than the first oscillation frequency f1 and higher than the second oscillation frequency f2.

[0057] In the magnetic recording device 210, the first oscillation frequency f1 may be 1 / 3 or less of the resonance frequency of the magnetic recording medium 80. The second oscillation frequency f2 may be 1 / 3 or less of the resonance frequency. The resonance frequency is, for example, 20 GHz to 100 GHz.

[0058] The magnetic recording device 210 may further include a recording circuit 30D. The magnetic field generating unit 30 includes, for example, a first magnetic pole 31 and a coil 30c. The recording circuit 30D can supply a recording current Iw to the coil 30c. The first transition operation TO1 and the second transition operation TO2 are performed according to the recording current Iw.

[0059] Figure 3 It is a schematic perspective view illustrating a magnetic recording device according to a second embodiment.

[0060] like Figure 3 As shown, in the magnetic recording device 210 according to the embodiment, the magnetic head 110 is used together with the magnetic recording medium 80. In this example, the magnetic head 110 includes a recording unit 60 and a reproducing unit 70. The recording unit 60 includes a magnetic device 101.

[0061] The recording unit 60 of the magnetic head 110 records information in the magnetic recording medium 80. The reproducing unit 70 reproduces the information recorded in the magnetic recording medium 80.

[0062] The magnetic recording medium 80 includes, for example, a dielectric substrate 82 and a magnetic recording layer 81 provided on the dielectric substrate 82. The magnetization 83 of the magnetic recording layer 81 is controlled by the recording unit 60.

[0063] The reproduction unit 70 includes, for example, a first reproduction magnetic shield 72a, a second reproduction magnetic shield 72b, and a magnetic reproduction element 71. The magnetic reproduction element 71 is provided between the first reproduction magnetic shield 72a and the second reproduction magnetic shield 72b. The magnetic reproduction element 71 can output a signal corresponding to the magnetization 83 of the magnetic recording layer 81.

[0064] like Figure 3 As shown, the magnetic recording medium 80 moves relative to the magnetic head 110 in the medium moving direction 85. The magnetic head 110 records information corresponding to the magnetization 83 of the magnetic recording layer 81 at an arbitrary position. The magnetic head 110 reproduces information corresponding to the magnetization 83 of the magnetic recording layer 81 at an arbitrary position.

[0065] The recording unit 60 (or the magnetic device 101) may further include a second magnetic pole 32. The magnetic element 20 is provided between the first magnetic pole 31 and the second magnetic pole 32. By providing the second magnetic pole 32, the magnetic field Hx (see Figure 1 ) is effectively applied to the magnetic element 20. The second magnetic pole 32 may be included in the magnetic field generating unit 30.

[0066] Figure 4 It is a schematic perspective view illustrating a part of the magnetic recording device according to the second embodiment.

[0067] Figure 4 A head slider is illustrated.

[0068] The magnetic head 110 is provided on a head slider 159. The head slider 159 is made of, for example, Al2O3 / TiC, etc. The head slider 159 moves relative to the magnetic recording medium while floating on or contacting the magnetic recording medium.

[0069] The head slider 159 has, for example, an air inlet side 159A and an air outlet side 159B. The magnetic head 110 is disposed on the side of the air outlet side 159B of the head slider 159. Thus, the magnetic head 110 moves relative to the magnetic recording medium while floating above or in contact with the magnetic recording medium.

[0070] Figure 5 It is a schematic perspective view illustrating a magnetic recording device according to an embodiment.

[0071] Figure 6 (a) and Figure 6 (b) is a schematic perspective view illustrating a part of the magnetic recording device according to the embodiment.

[0072] like Figure 5 As shown, in the magnetic recording device 150 involved in the embodiment, a rotary actuator is used. The recording medium disk 180 is installed on the spindle motor 180M. The recording medium disk 180 rotates in the direction of the arrow AR through the spindle motor 180M. The spindle motor 180M responds to the control signal from the drive device control unit. The magnetic recording device 150 involved in this embodiment can have a plurality of recording medium disks 180. The magnetic recording device 150 may include a recording medium 181. The recording medium 181 is, for example, an SSD (Solid State Drive). The recording medium 181 uses, for example, a non-volatile memory such as a flash memory. For example, the magnetic recording device 150 may also be a hybrid HDD (Hard Disk Drive).

[0073] The head slider 159 records and reproduces information recorded on the recording medium disk 180. The head slider 159 is provided at the top end of the thin film suspension 154. The magnetic head according to the embodiment is provided near the top end of the head slider 159.

[0074] When the recording medium disk 180 rotates, the pressing pressure of the suspension 154 is balanced with the pressure generated on the medium facing surface (ABS) of the head slider 159. The distance between the medium facing surface of the head slider 159 and the surface of the recording medium disk 180 becomes a predetermined floating amount. In the embodiment, the head slider 159 may be in contact with the recording medium disk 180. For example, a contact movement type may be applied.

[0075] The suspension 154 is connected to one end of an arm 155 (e.g., an actuator arm). The arm 155 has, for example, a bobbin portion, etc. The bobbin portion holds a drive coil. A voice coil motor 156 is provided at the other end of the arm 155. The voice coil motor 156 is a type of linear motor. The voice coil motor 156 includes, for example, a drive coil and a magnetic circuit. The drive coil is wound around the bobbin portion of the arm 155. The magnetic circuit includes a permanent magnet and an opposing yoke. A drive coil is provided between the permanent magnet and the opposing yoke. The suspension 154 has one end and the other end. The magnetic head is provided at one end of the suspension 154. The arm 155 is connected to the other end of the suspension 154.

[0076] The arm 155 is held by a ball bearing. The ball bearings are provided at two locations, upper and lower, of the bearing portion 157. The arm 155 can be rotated and slid by the voice coil motor 156. The magnetic head can be moved to any position of the recording medium disk 180.

[0077] Figure 6 (a) illustrates a partial configuration of the magnetic recording device and is an enlarged perspective view of the head stack assembly 160 .

[0078] Figure 6 (b) is a perspective view illustrating a magnetic head assembly (head gimbal assembly: HGA) 158 which is a part of the head stack assembly 160 .

[0079] like Figure 6 As shown in (a), the head stack assembly 160 includes a bearing portion 157, a head gimbal assembly 158, and a support frame 161. The head gimbal assembly 158 extends from the bearing portion 157. The support frame 161 extends from the bearing portion 157. The extension direction of the support frame 161 is opposite to the extension direction of the head gimbal assembly 158. The support frame 161 supports the coil 162 of the voice coil motor 156.

[0080] like Figure 6 As shown in FIG. 1 ( b ), the head gimbal assembly 158 includes an arm 155 extending from a bearing portion 157 and a suspension 154 extending from the arm 155 .

[0081] A head slider 159 is provided at the top end of the suspension 154. The head slider 159 is provided with the magnetic head according to the embodiment.

[0082] The head assembly (head gimbal assembly) 158 according to the embodiment includes the magnetic head according to the embodiment, a head slider 159 provided with the magnetic head, a suspension 154, and an arm 155. The head slider 159 is provided at one end of the suspension 154. The arm 155 is connected to the other end of the suspension 154.

[0083] The suspension 154 may include, for example, leads (not shown) for recording and reproducing signals. The suspension 154 may also include, for example, leads (not shown) for a heater for adjusting the floating amount. The suspension 154 may also include, for example, leads (not shown) for an oscillating element, etc. These leads are electrically connected to a plurality of electrodes provided on the magnetic head.

[0084] The magnetic recording device 150 is provided with a signal processing unit 190. The signal processing unit 190 uses a magnetic head to record and reproduce signals on a magnetic recording medium. The input and output lines of the signal processing unit 190 are connected to, for example, electrode pads of the head gimbal assembly 158 and are electrically connected to the magnetic head.

[0085] The magnetic recording device 150 according to the embodiment includes a magnetic recording medium, a magnetic head according to the embodiment, a movable part, a position control part, and a signal processing part. The movable part can relatively move the magnetic recording medium and the magnetic head in a state of separation or contact. The position control part positions the magnetic head at a predetermined recording position of the magnetic recording medium. The signal processing part records and reproduces the signal of the magnetic recording medium using the magnetic head.

[0086] For example, as the magnetic recording medium, a recording medium disk 180 is used. The movable portion includes, for example, a head slider 159. The position control portion includes, for example, a head gimbal assembly 158.

[0087] The implementation method may include the following technical solutions.

[0088] (Technical Solution 1)

[0089] A magnetic device, comprising:

[0090] A magnetic element comprising a first magnetic layer and a second magnetic layer; and

[0091] Magnetic field generating unit,

[0092] The magnetic field generating unit is capable of performing a first transition operation and a second transition operation.

[0093] In the first transition operation, the first state of generating the first magnetic field is changed to the second state of generating the second magnetic field.

[0094] In the second transition operation, the second state is changed to the first state.

[0095] The first magnetic field includes a first component in a first direction from the first magnetic layer to the second magnetic layer.

[0096] The second magnetic field includes a second component in a second direction from the second magnetic layer to the first magnetic layer.

[0097] (Technical Solution 2)

[0098] According to the magnetic device described in technical solution 1,

[0099] One of the first magnetic layer and the second magnetic layer has positive polarization,

[0100] The other of the first magnetic layer and the second magnetic layer has negative polarization.

[0101] (Technical Solution 3)

[0102] According to the magnetic device described in technical solution 1,

[0103] The first magnetic layer includes a first element, and the first element includes at least one selected from Fe, Co, and Ni.

[0104] The second magnetic layer includes the first element and a second element, wherein the second element includes at least one selected from Cr, V, Mn, Ti and Sc,

[0105] The first magnetic layer does not include the second element, or a first concentration of the second element in the first magnetic layer is lower than a second concentration of the second element in the second magnetic layer.

[0106] (Technical Solution 4)

[0107] According to the magnetic device described in technical solution 3,

[0108] In the first state and the second state, an element current flows in a direction from the first magnetic layer to the second magnetic layer.

[0109] In the first state, the first oscillation frequency of the magnetic field generated by the magnetic element is 10 GHz or less,

[0110] In the second state, a second oscillation frequency of the magnetic field generated by the magnetic element is 10 GHz or less.

[0111] (Technical Solution 5)

[0112] According to the magnetic device described in technical solution 4,

[0113] In the first transition operation, the oscillation frequency of the first transition operation of the magnetic field generated by the magnetic element is higher than the first oscillation frequency and higher than the second oscillation frequency,

[0114] In the second transition operation, an oscillation frequency of the magnetic field generated from the magnetic element in the second transition operation is higher than the first oscillation frequency and higher than the second oscillation frequency.

[0115] (Technical Solution 6)

[0116] The magnetic device according to any one of technical solutions 1 to 5,

[0117] The first magnetic layer and the second magnetic layer have negative perpendicular magnetic anisotropy.

[0118] (Technical Solution 7)

[0119] The magnetic device according to any one of technical solutions 1 to 5,

[0120] The first magnetic layer is provided between the magnetic field generating unit and the second magnetic layer, or,

[0121] The second magnetic layer is provided between the magnetic field generating unit and the first magnetic layer.

[0122] (Technical Solution 8)

[0123] The magnetic device according to any one of technical solutions 1 to 7,

[0124] The magnetic element further includes a first intermediate layer disposed between the first magnetic layer and the second magnetic layer.

[0125] (Technical Solution 9)

[0126] According to the magnetic device described in technical solution 8,

[0127] The first intermediate layer is conductive and non-magnetic.

[0128] (Technical Solution 10)

[0129] According to the magnetic device described in technical solution 8 or 9,

[0130] The first intermediate layer includes at least one selected from the group consisting of Cu, Al, Au, Ag, and Cr.

[0131] (Technical Solution 11)

[0132] The magnetic device according to any one of technical solutions 1 to 10,

[0133] A distance between the first magnetic layer and the second magnetic layer is greater than or equal to 2 nm and less than or equal to 10 nm.

[0134] (Technical Solution 12)

[0135] The magnetic device according to any one of technical solutions 1 to 11,

[0136] The magnetic field generating unit includes a first magnetic pole and a coil,

[0137] The first transition operation and the second transition operation are performed according to the recording current flowing through the coil.

[0138] (Technical Solution 13)

[0139] A magnetic head comprises the magnetic device described in technical solution 1.

[0140] (Technical Solution 14)

[0141] A magnetic recording device comprising:

[0142] The magnetic head described in technical solution 13; and

[0143] Magnetic recording media.

[0144] (Technical Solution 15)

[0145] According to the magnetic recording device described in technical solution 14,

[0146] By means of the first transition operation, first information is recorded in the magnetic recording medium.

[0147] Through the second transition operation, second information different from the first information is recorded in the magnetic recording medium.

[0148] (Technical Solution 16)

[0149] According to the magnetic recording device described in technical solution 15,

[0150] It also has component circuits,

[0151] The device circuit is capable of supplying device current to the first magnetic layer and the second magnetic layer in the first transition operation and the second transition operation.

[0152] The first magnetic layer includes a first element, and the first element includes at least one selected from Fe, Co, and Ni.

[0153] The second magnetic layer includes the first element and a second element, wherein the second element includes at least one selected from Cr, V, Mn, Ti and Sc,

[0154] The first magnetic layer does not contain the second element, or a first concentration of the second element in the first magnetic layer is lower than a second concentration of the second element in the second magnetic layer.

[0155] The device current flows from the first magnetic layer to the second magnetic layer.

[0156] (Technical Solution 17)

[0157] According to the magnetic recording device described in technical solution 16,

[0158] In the first state, the first oscillation frequency of the magnetic field generated by the magnetic element is 10 GHz or less,

[0159] In the second state, a second oscillation frequency of the magnetic field generated by the magnetic element is 10 GHz or less.

[0160] (Technical Solution 18)

[0161] According to the magnetic recording device described in technical solution 17,

[0162] In the first transition operation, the oscillation frequency of the first transition operation of the magnetic field generated by the magnetic element is higher than the first oscillation frequency and higher than the second oscillation frequency,

[0163] In the second transition operation, an oscillation frequency of the magnetic field generated from the magnetic element in the second transition operation is higher than the first oscillation frequency and higher than the second oscillation frequency.

[0164] (Technical Solution 19)

[0165] According to the magnetic recording device described in technical solution 17 or 18,

[0166] The first oscillation frequency is less than 1 / 3 of the resonance frequency of the magnetic recording medium.

[0167] The second oscillation frequency is less than 1 / 3 of the resonance frequency.

[0168] (Technical Solution 20)

[0169] The magnetic recording device according to any one of technical solutions 16 to 19,

[0170] It also has a recording circuit.

[0171] The magnetic field generating unit includes a first magnetic pole and a coil,

[0172] The recording circuit is capable of supplying a recording current to the coil,

[0173] The first transition operation and the second transition operation are performed based on the recording current.

[0174] According to the embodiments, it is possible to provide a magnetic device, a magnetic head, and a magnetic recording apparatus that can improve characteristics.

[0175] In the present specification, “perpendicular” and “parallel” include not only strict perpendicularity and strict parallelism, but also include, for example, variations in the manufacturing process, as long as they are substantially perpendicular or substantially parallel.

[0176] The embodiments of the present invention are described above with reference to specific examples. However, the present invention is not limited to these specific examples. For example, the specific configuration of the magnetic poles, magnetic elements, magnetic layers, magnetic field generating units, and control units included in the magnetic device, magnetic head, and magnetic recording device is included in the scope of the present invention as long as those skilled in the art can implement the present invention in the same manner and obtain the same effect by appropriately selecting from the known range.

[0177] Any combination of two or more elements of the specific examples within a technically possible range is also included in the scope of the present invention as long as it includes the gist of the present invention.

[0178] In addition, all magnetic devices, magnetic heads, and magnetic recording devices that can be implemented by those skilled in the art based on appropriate design changes to the magnetic devices, magnetic heads, and magnetic recording devices described above as embodiments of the present invention also fall within the scope of the present invention as long as they include the gist of the present invention.

[0179] Furthermore, within the scope of the concept of the present invention, a person skilled in the art will be able to conceive of various changes and modifications, and will understand that these changes and modifications also belong to the scope of the present invention.

[0180] Several embodiments of the present invention have been described, but these embodiments are presented as examples and are not intended to limit the scope of the invention. These new embodiments can be implemented in various other ways, and various omissions, substitutions, and changes can be made without departing from the gist of the invention. These embodiments and their variations are included in the scope and gist of the invention, and are included in the invention described in the claims and the scope of their equivalents.

Claims

1. A magnetic device comprising: A magnetic element comprising a first magnetic layer and a second magnetic layer; and Magnetic field generating unit, The magnetic field generating unit is capable of performing a first transition operation and a second transition operation. In the first transition operation, the first state of generating the first magnetic field is changed to the second state of generating the second magnetic field. In the second transition operation, the second state is changed to the first state. The first magnetic field includes a first component in a first direction from the first magnetic layer to the second magnetic layer. The second magnetic field includes a second component in a second direction from the second magnetic layer to the first magnetic layer.

2. The magnetic device according to claim 1, The first magnetic layer includes a first element, and the first element includes at least one selected from Fe, Co, and Ni. The second magnetic layer includes the first element and a second element, wherein the second element includes at least one selected from Cr, V, Mn, Ti and Sc, The first magnetic layer does not include the second element, or a first concentration of the second element in the first magnetic layer is lower than a second concentration of the second element in the second magnetic layer.

3. The magnetic device according to claim 2, In the first state and the second state, an element current flows in a direction from the first magnetic layer to the second magnetic layer. In the first state, the first oscillation frequency of the magnetic field generated by the magnetic element is 10 GHz or less, In the second state, a second oscillation frequency of the magnetic field generated by the magnetic element is 10 GHz or less.

4. The magnetic device according to claim 3, In the first transition operation, the oscillation frequency of the first transition operation of the magnetic field generated by the magnetic element is higher than the first oscillation frequency and higher than the second oscillation frequency, In the second transition operation, an oscillation frequency of the magnetic field generated from the magnetic element in the second transition operation is higher than the first oscillation frequency and higher than the second oscillation frequency.

5. The magnetic device according to claim 1, The first magnetic layer and the second magnetic layer have negative perpendicular magnetic anisotropy. 6 . A magnetic head comprising the magnetic device according to claim 1 .

7. A magnetic recording device comprising: The magnetic head according to claim 6; and Magnetic recording media.

8. The magnetic recording device according to claim 7, By means of the first transition operation, first information is recorded in the magnetic recording medium. Through the second transition operation, second information different from the first information is recorded in the magnetic recording medium.

9. The magnetic recording device according to claim 8, It also has component circuits, The device circuit is capable of supplying device current to the first magnetic layer and the second magnetic layer in the first transition operation and the second transition operation. The first magnetic layer includes a first element, and the first element includes at least one selected from Fe, Co, and Ni. The second magnetic layer includes the first element and a second element, wherein the second element includes at least one selected from Cr, V, Mn, Ti and Sc, The first magnetic layer does not contain the second element, or a first concentration of the second element in the first magnetic layer is lower than a second concentration of the second element in the second magnetic layer. The device current flows from the first magnetic layer to the second magnetic layer.

10. The magnetic recording device according to claim 9, It also has a recording circuit. The magnetic field generating unit includes a first magnetic pole and a coil, The recording circuit is capable of supplying a recording current to the coil, The first transition operation and the second transition operation are performed based on the recording current.

Images