Electrode assembly and plasma processing device

Abstract

The invention provides an electrode assembly which is arranged in a plasma processing device, the electrode assembly is used for bearing a substrate to be processed, and the electrode assembly comprises an electrostatic chuck used for bearing the substrate to be processed; the metal electrode is arranged below the electrostatic chuck; the top end of each jacking device penetrates out of the top of the electrostatic chuck to the back surface of the substrate, and the bottom end of each jacking device is arranged in the metal electrode; the lifting motor is arranged in the metal electrode and connected with the bottom end of the jacking device; and the auxiliary control circuit is embedded in the metal electrode, is electrically connected with each lifting motor and is used for controlling each lifting motor to drive each jacking device to ascend or descend so as to realize ascending and descending of the substrate. By arranging the lifting motor, multi-stage lifting of the substrate is achieved, and the structural complexity and the production cost are reduced.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor equipment, and in particular to an electrode assembly and a plasma processing device. Background Art

[0002] Vacuum processing equipment is widely used in the semiconductor industry, among which plasma processing equipment is the most important vacuum processing equipment. Plasma processing equipment generates plasma by means of radio frequency coupled discharge, and then uses plasma to perform deposition, etching and other processing on substrates (semiconductor wafers, glass substrates, etc.).

[0003] The structure of a typical plasma processing equipment is as follows: Figure 1 As shown, it includes a chamber 100, and the chamber includes an upper electrode assembly 20 and a lower electrode assembly arranged oppositely. Plasma is generated and maintained between the upper and lower electrodes to perform plasma etching on the substrate arranged on the lower electrode assembly. The lower electrode assembly includes a base 10, and the base 10 is coupled to the upper electrode assembly 20 above as a lower electrode by electric field. A coolant pipe 8 is arranged in the base and is connected to an external chiller. The temperature of the base 10 is controlled by controlling the flow rate and temperature of the coolant output by the chiller to the coolant pipe 8 in the base. An equipment plate 32 is included below the base, and an airtight structure such as a sealing ring is arranged on the equipment plate 32. The space above the equipment plate in the chamber is a vacuum area through the sealing of the equipment plate 32, and the space 34 below the equipment plate 32 is an atmospheric environment. The base 10 is combined with the heater 12 through the adhesive layer 11 located above it, and an electrostatic chuck 13 is fixed above the heater 12, and the substrate to be processed is adsorbed on the electrostatic chuck by the electrostatic chuck 13. At least one RF power source outputs RF power to the device board 32. The device board 32 and the base 10 are both made of highly conductive aluminum metal, and the two are closely attached to each other. The heater 12 has multiple heating wires 121, and the multiple heating wires can be connected to independently controllable heating power sources, so that each heating wire can generate different heating power to adjust the temperature of the upper substrate. The base 10 and the device board 32 are surrounded by an insulating ring 33. The outer side of the insulating ring 33 also includes a grounded shielding ring 30, which extends downward to the bottom of the reaction chamber and is grounded.

[0004] The plasma processing equipment is also provided with a pin system for controlling the lifting and lowering of the substrate. Figure 1 As shown, the ejector pins 36, the connecting mechanism 35 and the cylinder 37 are included. The ejector pins 36 are arranged in the channel formed by the stacked body of the electrostatic chuck 13, the base 10 and the device plate 32. The number of the ejector pins 36 is usually 3, which are respectively connected to the cylinder 37 through the corresponding connecting mechanism 35. The cylinder 37 provides a lifting force for each ejector pin 36, so that the ejector pin 36 can move upward or downward to lift the substrate from the electrostatic chuck 13 or place the substrate on the electrostatic chuck 13.

[0005] The existing ejector pin system has the following problems: (1) The structure is relatively complex; (2) The precision of the cylinder to control the ejector pin lifting is not enough, and it is impossible to achieve multi-level lifting. Specifically, in some semiconductor processes, if it is necessary to clean the polymer deposited in the pocket area, the pocket area is the area surrounded by the back of the substrate, the step portion of the edge ring 14 and the side of the electrostatic chuck 13, then the substrate needs to be lifted to a height of about 2 mm. At this time, the ejector pin 36 cannot accurately lift the substrate to this height due to the insufficient control precision of the cylinder, resulting in the polymer in the pocket area cannot be cleaned. In addition, since the substrate also needs to be lifted to the handling height so that the robot arm can enter the chamber to move the substrate in and out of the chamber, at this time, due to the limited lifting height of the first-level cylinder, only setting up a first-level cylinder cannot meet the accuracy requirements of the handling height. Therefore, in order to meet the lifting requirements of different heights, it is necessary to set up multiple cylinders to achieve the lifting requirements of different heights, which will further increase the complexity of the components and the production cost. Summary of the invention

[0006] The object of the present invention is to provide an electrode assembly and a plasma processing device, wherein the electrode assembly is configured such that a lifting device and a lifting motor are arranged in a metal electrode, and the lifting motor is connected to the bottom end of the lifting device to provide a lifting force for the lifting device; at the same time, the lifting motor is connected to an auxiliary control circuit arranged in the metal electrode, and the auxiliary control circuit controls each lifting motor to drive each lifting device to rise or fall, so as to realize precise control of the lifting height of the substrate.

[0007] To achieve the above-mentioned purpose, the present invention provides an electrode assembly, which is arranged in a plasma processing device, and the electrode assembly is used to carry a substrate to be processed, and includes: an electrostatic suction cup, used to carry the substrate to be processed; a metal electrode, which is arranged below the electrostatic suction cup; a plurality of lifting devices, the top end of each of the lifting devices can pass through the top of the electrostatic suction cup to the back side of the substrate, and the bottom end of each of the lifting devices is arranged in the metal electrode; a lifting motor, which is arranged in the metal electrode and connected to the bottom end of the lifting device; an auxiliary control circuit, which is buried in the metal electrode, and the auxiliary control circuit is electrically connected to the lifting motor, and is used to control each of the lifting motors to drive each of the lifting devices to rise or fall, so as to realize the lifting and lowering of the substrate.

[0008] Preferably, the metal electrode comprises: a base disposed below the electrostatic chuck, and a device plate disposed below the base.

[0009] Preferably, each of the lifting devices is electrically connected to a corresponding lifting motor.

[0010] Preferably, each of the lifting devices comprises a guide channel and a lifting pin; the guide channel is arranged to penetrate the electrostatic chuck, and the lifting pin is arranged in the guide channel for lifting the substrate.

[0011] Preferably, a mounting groove is provided on the equipment plate or the base for placing the lifting motor; the mounting groove is arranged in a one-to-one correspondence with the position of the guide channel.

[0012] Preferably, the auxiliary control circuit is connected to an external power supply located below the device board.

[0013] Preferably, a filter is further provided between the auxiliary control circuit and the external power supply.

[0014] Preferably, the auxiliary control circuit includes a PCB board.

[0015] Preferably, the base includes a first cooling channel, and the first cooling channel is connected to an external first cooling source for controlling the temperature of the substrate.

[0016] Preferably, a heat insulation layer is provided between the base and the equipment plate.

[0017] Preferably, the device plate includes a second cooling channel, and the second cooling channel is connected to an external second cooling source for auxiliary temperature control of the substrate.

[0018] Preferably, the heat insulating layer is made of at least one of a ceramic material with low thermal conductivity or a Teflon material, and the ceramic material with low thermal conductivity includes at least one of quartz, silicate, and aluminum nitride.

[0019] Preferably, the thickness of the thermal insulation layer is 1 mm-30 mm.

[0020] Preferably, the base and / or the device plate are made of a high thermal conductivity metal, and the high thermal conductivity metal includes aluminum.

[0021] The present invention also provides a plasma processing device, which includes: a reaction chamber; an electrode assembly as described above, located at the bottom of the reaction chamber and used to carry a substrate to be processed; a gas supply assembly arranged opposite to the electrode assembly; a reaction gas is introduced into the reaction chamber through the gas supply assembly to perform plasma etching on the substrate.

[0022] In summary, compared with the prior art, an electrode assembly and a plasma processing device provided by the present invention have the following beneficial effects: the present invention arranges a lifting motor and an auxiliary control circuit in a metal electrode, and controls the number of rotations of the motor rotor of the lifting motor through the auxiliary control circuit to meet the multi-stage lifting requirements of the substrate; further, the present invention arranges an insulating layer between the base and the equipment plate to slow down the heat conduction between the base and the equipment plate, and at the same time arranges a second cooling channel in the equipment plate to assist in regulating the temperature of the equipment plate, thereby enhancing the temperature stability in the equipment plate, keeping the equipment plate at a normal operating temperature, and reducing the damage to the lifting motor and the auxiliary control circuit caused by high temperature. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] Figure 1 A cross-sectional schematic diagram of a plasma processor in the prior art;

[0024] Figure 2 It is a schematic diagram of a first embodiment of an electrode assembly and a plasma processing device of the present invention;

[0025] Figure 3 FIG. 4 is a schematic diagram of another embodiment of an electrode assembly of the present invention. DETAILED DESCRIPTION

[0026] The following will be combined with the attached embodiment of the present invention Figure 1 ~Attached Figure 3 , the technical solutions, structural features, objectives achieved and effects in the embodiments of the present invention are described in detail.

[0027] It should be noted that the drawings are in a very simplified form and use non-precise proportions. They are only used to conveniently and clearly assist in explaining the embodiments of the present invention, and are not used to limit the conditions for the implementation of the present invention. Therefore, they have no substantive technical significance. Any structural modification, change in proportional relationship or adjustment of size, without affecting the effects and purposes that can be achieved by the present invention, should still fall within the scope of the technical content disclosed by the present invention.

[0028] It should be noted that, in the present invention, relational terms such as first and second, etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "include", "comprise" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes not only the elements explicitly listed, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device.

[0029] Since the prior art has limited precision in controlling the lifting height of the ejector pin by the cylinder, it cannot meet the lifting requirements of substrates at different heights. Therefore, in order to achieve accurate control of the lifting height of the substrate, the present invention improves the structure of the electrode assembly relative to the prior art, such as Figure 2 shown. Figure 2 The first embodiment of the plasma processing device provided with the improved electrode assembly provided by the present invention is a schematic diagram, the plasma processing device includes a reaction chamber 200, a gas shower head assembly 201 arranged at the top of the reaction chamber 200, in this embodiment, the gas shower head assembly 201 is used as an upper electrode; and an electrode assembly arranged opposite to the gas shower head assembly 201, which is used as a lower electrode in this embodiment, that is, in this embodiment, the reaction chamber is a capacitively coupled plasma processing device. In other embodiments, the reaction chamber can also be an inductively coupled plasma processing device, in which case the gas shower head assembly 201 is only used as a gas supply assembly and does not have the function of an upper electrode. The electrode assembly is located at the bottom of the reaction chamber 200 and is used to carry a substrate W to be processed; a reaction gas is introduced into the reaction chamber 200 through the gas shower head assembly 201, and the gas shower head assembly 201 and / or the electrode assembly are connected to a high-frequency radio frequency power supply, so that the reaction gas forms and maintains a plasma between the gas shower head assembly 201 and the improved electrode assembly, so as to perform plasma etching on the substrate carried on the electrode assembly.

[0030] Among them, Figure 2 As shown, the electrode assembly includes: an electrostatic chuck 202, in which an electrode 221 electrically connected to a high-voltage DC power supply is arranged, and the substrate W to be processed is adsorbed on the electrostatic chuck 202 through the electrostatic chuck 202; an edge ring 204 is also arranged around the periphery of the electrostatic chuck 202; a metal electrode 203 is arranged below the electrostatic chuck 202; the metal electrode 203 includes a base 231 arranged below the electrostatic chuck 202 and an equipment plate 232 arranged below the base 231. The base 231 and the equipment plate 232 are surrounded by an insulating ring 209, and the outer side of the insulating ring 209 also includes a grounded shielding ring 210, which extends downward to the bottom of the reaction chamber 200 and is grounded. A heater 207 is also arranged between the top of the base 231 and the bottom of the electrostatic chuck 202, and the top of the base 231 is combined with the heater 207 through an adhesive layer 208. Preferably, the base 231 and the device plate 232 are made of a metal with high thermal conductivity. In this embodiment, the base 231 and the device plate 232 are made of aluminum with high thermal conductivity.

[0031] Further, if Figure 2As shown, the base 231 is provided with a first cooling channel 233, and the first cooling channel 233 is connected to the external first cooling source, wherein the first cooling source outputs a cooling liquid of a suitable process temperature. When the process requires 140 degrees, the first cooling liquid input to the first cooling channel 233 needs to be about 140 degrees. When the process temperature is less than -30 degrees, such as -60 degrees, the temperature of the first cooling liquid input to the first cooling channel 233 also needs to be below -60 degrees. In addition, the temperature and flow rate of the first cooling liquid output by the first cooling source can be greatly adjusted according to the needs of the process, thereby realizing the temperature control adjustment of the substrate. The equipment plate 232 is used to fix the electrode assembly, and the equipment plate 232 is provided with an airtight structure such as a sealing ring (not shown in the figure). The equipment plate 232 makes the upper part of the equipment plate 232 in the reaction chamber 200 a vacuum area, and the lower part of the equipment plate 232 is the atmospheric environment 211. At the same time, the equipment board 232 is also provided with an electrical interface, a coolant interface and a gas interface, so that the wires for providing high-voltage DC power to the electrostatic chuck, the wires for providing heating power output to the heater, the cooling pipes for transmitting the coolant and the gas pipes for transmitting the clean gas are connected to the vacuum area of ​​the reaction chamber 200 through the corresponding interfaces, while ensuring that the reaction chamber 200 maintains a vacuum state during the process.

[0032] Further, if Figure 2 As shown, the electrode assembly also includes a plurality of lifting devices 205, the top of each lifting device 205 passes through the top of the electrostatic chuck 202 to the back of the substrate W, and the bottom of each lifting device 205 is arranged in the metal electrode 203. In some embodiments, the number of the lifting devices 205 is 3; a plurality of lifting motors 206 are arranged in the metal electrode 203 and connected to the bottom of the lifting device 205; an auxiliary control circuit 214 is buried in the metal electrode 203, and the auxiliary control circuit 214 is electrically connected to each lifting motor 206, and is used to control each lifting motor 206 to drive each lifting device 205 to rise or fall, so as to achieve the lifting of the substrate. Optionally, the auxiliary control circuit includes a PCB board, a control chip, etc.

[0033] In this embodiment, if Figure 2As shown, each of the lifting devices 205 is electrically connected to a corresponding lifting motor 206, and each lifting motor 206 is connected to the auxiliary control circuit 214 through a wire 261, and the wire 261 is also set in the metal electrode 203. In some embodiments, the number of the lifting devices 205 is 3; the number of the corresponding lifting motors 206 is also 3. The auxiliary control circuit 214 sends a lifting instruction to each lifting motor 206 to control the number of revolutions of the motor rotor of each lifting motor 206, so that each lifting motor 206 drives the lifting of the corresponding connected lifting device 205. In other embodiments, only one lifting motor 206 can be set to control the lifting of multiple lifting devices 205 at the same time; at this time, an additional transmission mechanism (not shown in the figure) is set between the lifting device 205 and the lifting motor 206, and multiple lifting devices 205 are connected to the lifting motor 206 through the transmission mechanism, thereby achieving the purpose of controlling the lifting of multiple lifting devices by one lifting motor. By precisely controlling the number of revolutions of the motor rotor of the lifting motor 206, the motor rotor converts its own number of revolutions into the lifting displacement of the lifting device 205 along the vertical direction, thereby realizing multi-level lifting control of the lifting device 205, thereby making the substrate height meet different process requirements.

[0034] Specifically, in one embodiment, when it is necessary to remove the polymer deposited in the pocket area surrounded by the back of the substrate W, the step portion of the edge ring 204 and the side of the electrostatic chuck 202, the auxiliary control circuit 214 sends a lifting instruction of 2 mm to the lifting motor 206. After receiving the lifting instruction, the lifting motor 206 controls the motor rotor to rotate the corresponding number of circles, so that the lifting device 205 lifts the substrate W in the vertical direction by 2 mm to achieve the removal of the deposits in the pocket area. In another embodiment, when the substrate W needs to be taken out of the reaction chamber 200, the auxiliary control circuit 214 sends a lifting instruction to rise to the transport height. After receiving the lifting instruction, the lifting motor 206 controls the motor rotor to rotate the corresponding number of circles, so that the substrate W is raised to the transport height, and the robot arm can enter the reaction chamber 200 to move the substrate W out of the reaction chamber. Compared with the prior art, the improved motor assembly provided by the present invention can realize the lifting requirements of different heights of the substrate by controlling the number of circles of the motor rotor.

[0035] Among them, Figure 2 As shown, the auxiliary control circuit 214 is connected to the external power supply 213 located below the device board 323, and the external power supply 213 provides working power for the auxiliary control circuit 214; further, in a preferred embodiment, a filter 212 is also arranged between the auxiliary control circuit 214 and the external power supply 213.

[0036] Furthermore, the device plate 232 or the base 231 is provided with a mounting slot for placing the lifting motor 206. Figure 2 As shown, the lifting device 205 includes a guide channel 251 and a lifting pin 252; when the mounting slot is set on the equipment plate 232, the guide channel 251 passes through the base 231, the adhesive layer 208, the heater 207 in sequence upward from the opening of the mounting slot on the equipment plate 232, and penetrates the electrostatic chuck 202; when the mounting slot is set on the base 231, the guide channel 251 passes through the adhesive layer 208, the heater 207 in sequence upward from the opening of the mounting slot on the base 231, and penetrates the electrostatic chuck 202. The guide channel 251 is staggered with the first cooling channel 233 in the base 231. The lifting pin 252 is arranged in the guide channel 251, and the top end of the lifting pin 252 passes through the top of the electrostatic suction cup 202 to contact the back side of the substrate W, and the bottom end is connected to the lifting motor 206. Driven by the lifting motor 206, the lifting pin 252 moves vertically along the guide channel 251 to lift the substrate W.

[0037] When each of the lifting devices 205 is electrically connected to one of the lifting motors 206, a plurality of mounting slots are correspondingly arranged on the device plate 232 or the base 231, and the mounting slots are arranged one-to-one corresponding to the positions of the guide channels 251, and each of the mounting slots is arranged at the same horizontal plane height, and each mounting slot is used to place one of the lifting motors 206 and the corresponding lifting pin 252. When the plurality of lifting devices 205 are connected to one of the lifting motors 206 through the transmission mechanism, only one mounting slot is correspondingly arranged in the device plate 232 or the base 231, which is used to place the lifting motor 206, and a sufficiently large space is reserved in the device plate 232 or the base 231 to accommodate the transmission mechanism. In a preferred embodiment, the mounting slot is arranged in the device plate 232, and the lifting motor 206 is arranged in the mounting slot to avoid the influence of extreme temperature changes of the base 231 on the working stability of the lifting motor 206. Since the transmission mechanism is a mechanical structure, it is less affected by temperature changes. Therefore, according to actual needs, the accommodating space can be set in the equipment plate 232 or the base 231, and the bottom end of the lifting pin 252 is connected to the transmission mechanism. The rotation of the motor rotor of the lifting motor 206 drives the transmission mechanism to move, thereby raising or lowering the lifting pin 252 to achieve the purpose of lifting or lowering the substrate.

[0038] It should be noted that in each process of processing the substrate, the RF power supply outputs RF power to at least one of the gas showerhead assembly 201 or the electrode assembly, dissociates the reaction gas in the reaction chamber 200 to form plasma and maintains it between the gas showerhead assembly 201 (upper electrode) and the electrode assembly (lower electrode), so that the reaction chamber 200 is in a RF environment. Since the lifting motor 206 and the auxiliary control circuit 214 are electronic devices, they cannot work normally in the RF environment of the reaction chamber. Therefore, in the present invention, the lifting motor 206 and the auxiliary control circuit 214 are arranged in the equipment plate 232 or the base 231 made of metal material. Since radio frequency has a significant skin effect, the downward radio frequency current will flow along the outer wall of the device plate 232 or the base 231. Therefore, the lifting motor 206 and the auxiliary control circuit 214 located in the device plate 232 or the base 231 do not have obvious current flowing through them, that is, they are not in a radio frequency environment and can therefore operate normally. It is understandable that since a large current still flows through the area away from the edge of the metal electrode (<10mm), the bottom of the mounting groove accommodating the lifting motor 206 and the auxiliary control circuit 214 needs to be at least 10mm away from the bottom of the metal electrode (the base 231 or the device plate 232).

[0039] In some manufacturing processes, since the substrate is at a temperature higher than 100°C or lower than -20°C, the temperature of the base will be higher or lower accordingly. Under such extreme temperatures, the auxiliary control circuit and the lifting motor may not work properly. Therefore, the present invention also provides another embodiment of the electrode assembly, such as Figure 3 As shown, Figure 2 Compared with the embodiment of the electrode assembly shown in the figure, a heat insulation layer 320 is added and the structure of the device plate 321 is adjusted. Specifically, the heat insulation layer 320 is arranged between the base 310 and the device plate 321, and the heat insulation layer 320 covers the entire bottom surface of the base 310, and thermally isolates the device plate 321 from the base 310 above. The heat insulation layer 320 is preferably made of a ceramic material with low thermal conductivity, such as quartz, silicate, aluminum nitride, etc., and can also be made of a polymer material such as Teflon material that can withstand 200 degrees. By setting the heat insulation layer 320 to separate the base 310 and the device plate 321, it is effectively ensured that the temperature of the working environment of the auxiliary control circuit 316 and the lifting motor 318 is within the normal range. The thickness of the heat insulation layer 320 can also be selected according to actual needs, and can be selected from 1 to 10 mm. When the temperature of the first coolant in the base 310 is very high, a thicker heat insulation layer, such as 10 to 30 mm, can also be selected to ensure a better heat insulation effect.

[0040] like Figure 3As shown, the lifting device (including the guide channel 319 and the lifting pin 317) in the electrode assembly of this embodiment passes through the insulation layer 320, the base 310, the bonding layer 307, the heater 305 in sequence from the upper end of the equipment plate 321, and is arranged through the electrostatic chuck 303, and the lifting device is staggered with the first cooling channel 308 in the base 310. The first cooling channel 308 is connected to the first cooling source C1, and the first cooling source C1 outputs the first cooling liquid suitable for the process temperature to the first cooling channel 308 to adjust the temperature of the base 310, so as to make the substrate W at a suitable process temperature.

[0041] Furthermore, in order to better control the temperature of the substrate and the temperature of the device board, such as Figure 3 As shown, a second cooling channel 322 is also provided in the equipment plate 321, and the second cooling channel 322 is connected to the external second cooling source C3. The temperature of the equipment plate 321 is maintained at room temperature or fluctuates around room temperature, such as 10-60 degrees, by inputting the second coolant, so as to ensure that the lifting motor 206 and the auxiliary control circuit 214 provided in the equipment plate 321 can work normally. Specifically, when the lifting motor 318 and the auxiliary control circuit 316 are provided in the equipment plate 321, the temperature of the base 310 during the plasma treatment process can be controlled by the first coolant, so that the base 310 has a high temperature or extremely low temperature process temperature, or is adjusted to other temperatures according to requirements, and the equipment plate 321 below is maintained at around room temperature. When the base 310 has a high temperature of 140 degrees, due to the presence of the thermal insulation layer 310, the heat is conducted to the lower device plate 321 at a lower speed, effectively reducing the heat conduction between the base 310 and the device plate 321. Even when the heat passes through the thermal insulation layer 310 and is conducted to the device plate 321, the heat can be taken away by the second cooling channel 322 to ensure that the device plate 323 is in a normal working temperature environment, thereby achieving the purpose of auxiliary temperature control and allowing the lifting motor 318 and the auxiliary control circuit 316 to operate within a normal temperature range.

[0042] To sum up, compared with the prior art, the electrode assembly and plasma processing device provided by the present invention set the lifting motor and the auxiliary control circuit in the metal electrode, and control the number of rotations of the motor rotor of the lifting motor through the auxiliary control circuit to meet the multi-stage lifting requirements of the substrate; further, a thermal insulation layer is set between the base and the equipment plate to slow down the heat conduction between the base and the equipment plate, and at the same time, a second cooling channel is set in the equipment plate to assist in regulating the temperature of the equipment plate, thereby enhancing the temperature stability in the equipment plate, keeping the equipment plate at a normal operating temperature, and reducing the damage to the lifting motor and the auxiliary control circuit caused by high temperature.

[0043] Although the content of the present invention has been described in detail through the above preferred embodiments, it should be appreciated that the above description should not be considered as a limitation of the present invention. After reading the above content, it will be apparent to those skilled in the art that various modifications and substitutions of the present invention will occur. Therefore, the protection scope of the present invention should be limited by the appended claims.

Claims

1. An electrode assembly, arranged in a plasma processing device, for supporting a substrate to be processed, characterized in that: include: An electrostatic chuck for carrying a substrate to be processed; A metal electrode is disposed below the electrostatic chuck; A plurality of lifting devices, wherein the top end of each of the lifting devices can pass through the top of the electrostatic chuck to the back of the substrate, and the bottom end of each of the lifting devices is arranged in the metal electrode; A lifting motor is disposed in the metal electrode and connected to the bottom end of the lifting device; An auxiliary control circuit is embedded in the metal electrode. The auxiliary control circuit is electrically connected to the lifting motor and is used to control each lifting motor to drive each lifting device to rise or fall, so as to achieve the lifting of the substrate.

2. The electrode assembly according to claim 1, characterized in that The metal electrode includes: a base arranged below the electrostatic chuck, and a device plate arranged below the base.

3. The electrode assembly according to claim 1, characterized in that Each of the lifting devices is electrically connected to a corresponding lifting motor.

4. The electrode assembly according to claim 1 or 3, characterized in that: Each of the lifting devices comprises a guide channel and a lifting pin; the guide channel is arranged through the electrostatic chuck, and the lifting pin is arranged in the guide channel for lifting the substrate.

5. The electrode assembly according to claim 4, characterized in that The equipment plate or the base is provided with a mounting groove for placing the lifting motor; the mounting groove is arranged in a one-to-one correspondence with the position of the guide channel.

6. The electrode assembly according to claim 2, characterized in that: The auxiliary control circuit is connected to an external power source located below the device board.

7. The electrode assembly according to claim 6, characterized in that A filter is also provided between the auxiliary control circuit and the external power supply.

8. The electrode assembly according to claim 1, characterized in that The auxiliary control circuit includes a PCB board.

9. The electrode assembly according to claim 2, characterized in that: The base includes a first cooling channel, which is connected to an external first cooling source and is used to control the temperature of the substrate.

10. The electrode assembly according to claim 2, characterized in that: A heat insulation layer is arranged between the base and the equipment plate.

11. The electrode assembly according to claim 10, characterized in that The device plate includes a second cooling channel, which is connected to an external second cooling source and is used for auxiliary temperature control of the substrate.

12. The electrode assembly according to claim 10, characterized in that The heat insulation layer is made of at least one of a ceramic material with low thermal conductivity or a Teflon material. The ceramic material with low thermal conductivity includes at least one of quartz, silicate, and aluminum nitride.

13. The electrode assembly according to claim 10, characterized in that The thickness of the heat insulation layer is 1mm-30mm.

14. The electrode assembly according to claim 2, characterized in that The base and / or the device plate are made of a high thermal conductivity metal, including aluminum.

15. A plasma processing device, characterized in that: include: Reaction chamber; The electrode assembly according to any one of claims 1 to 14, located at the bottom of the reaction chamber, for carrying a substrate to be processed; A gas supply assembly disposed opposite to the electrode assembly; The reaction gas is introduced into the reaction chamber through the gas supply component to perform plasma etching on the substrate.

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