LED wafer test correction method, electronic equipment and storage medium

Abstract

The invention relates to the technical field of LED production, and particularly discloses an LED wafer test correction method, electronic equipment and a storage medium. The LED wafer test correction method comprises the following steps: S1, carrying out spot measurement on a new wafer to obtain reference data; s2, extracting at least one new material wafer as a new material wafer to be tested; s3, cutting a to-be-tested new material wafer into a plurality of LED crystal grains; s4, extracting a plurality of LED crystal grains from the plurality of LED crystal grains to serve as LED crystal grains to be tested; s5, packaging and testing the LED crystal grains to be tested to obtain correction data; s6, comparing the correction data with the reference data, and judging whether the reference data is in a first preset threshold interval or not; s7, if not, taking another new material wafer as a new material wafer to be tested, and entering the step S3; and S8, if yes, obtaining a correction coefficient according to the correction data and the reference data, and correcting other reference data. By implementing the invention, the production efficiency and the test data accuracy can be improved.

Description

Technical Field

[0001] The present invention relates to the technical field of LED production, and in particular to an LED wafer testing and correction method, electronic equipment and storage medium. Background Art

[0002] LED chip testing and calibration is an important process involving precise measurement and data consistency. In bare chip testing, equipment, probes, and external environment may introduce errors; the existing technology is to select the grains and send them to the laboratory for packaging and testing, referred to as IS; IS stands for Integrating Sphere, which is the abbreviation of integrating sphere, also known as photometric sphere, luminous flux sphere, a hollow sphere with a highly reflective inner surface, the inner wall is coated with a white diffuse reflection layer, and the inner wall of the sphere is diffused evenly at each point. Each step of IS calibration is completed by engineering and technical personnel, and the whole process is tracked. This method has high labor intensity, and a large number of work tasks will increase the labor intensity of employees, which may cause physical fatigue and psychological pressure. A large amount of work requires more human resources, and sometimes even overtime is required to complete the task, which will increase the operating costs of the enterprise. Repetitive tasks can easily make people lose interest and motivation, thereby affecting work efficiency. Letting employees with higher skills engage in simple and repetitive work for a long time will not be able to give full play to their professional expertise, resulting in a waste of talent resources. It is easy to make mistakes. When people deal with repetitive tasks, they are prone to operational errors due to distraction or fatigue. Summary of the invention

[0003] The technical problem to be solved by the present invention is to provide a LED wafer testing and calibration method, which can greatly improve the testing efficiency.

[0004] Another technical problem to be solved by the present invention is to provide an electronic device.

[0005] Another technical problem to be solved by the present invention is to provide a storage medium.

[0006] In order to solve the above problems, the present invention discloses a LED wafer testing and calibration method, which comprises the following steps:

[0007] S1. Conduct spot measurements on multiple new material wafers to obtain benchmark data;

[0008] S2, extracting at least one new material wafer from a plurality of new material wafers according to a first preset rule as a new material wafer to be tested;

[0009] S3, cutting the new material wafer to be tested to obtain a plurality of LED chips;

[0010] S4, extracting a plurality of LED dies from the plurality of LED dies according to a second preset rule as LED dies to be tested;

[0011] S5, performing packaging test on a plurality of LED chips to be tested to obtain calibration data;

[0012] S6, comparing the calibration data with the reference data of the new material wafer to be tested, and determining whether the reference data is within a first preset threshold range;

[0013] S7, when the judgment is no, another new material wafer is used as the new material wafer to be tested, and the process goes to step S3;

[0014] S8. When the judgment is yes, a correction coefficient is obtained according to the correction data and the reference data, and the reference data of other new material wafers are corrected to obtain target data.

[0015] As an improvement of the above technical solution, step S2 includes:

[0016] S21, obtaining yield data and deviation data of the target new material wafer according to the benchmark data, wherein the yield data includes overall yield, voltage yield, current yield, main wavelength yield and light intensity yield; and the deviation data includes main wavelength deviation and light intensity deviation;

[0017] S22, determining whether the yield data and deviation data of the target new material wafer are within a second preset threshold range, if so, taking the target new material wafer as the new material wafer to be tested; if not, extracting another new material wafer as the target new material wafer and entering step S21.

[0018] As an improvement of the above technical solution, the second preset threshold interval of the overall yield is 85% to 100%, the second preset threshold interval of the voltage yield is 90% to 100%, the second preset threshold interval of the current yield is 90% to 100%, the second preset threshold interval of the main wavelength yield is 90% to 100%, and the second preset threshold interval of the light intensity yield is 90% to 100%;

[0019] The second preset threshold interval of the main wavelength deviation is 0 to 0.5 nm, and the second preset threshold interval of the light intensity deviation is 0 to 20 mcd.

[0020] As an improvement of the above technical solution, step S4 includes:

[0021] S41, randomly selecting an LED die obtained by cutting and sorting the new material wafer to be tested as a target LED die;

[0022] S42, determining whether the voltage data, current data, main wavelength data, and light intensity data of the target LED die are within a third preset threshold range; if so, taking the target LED die as the LED die to be tested; if not, proceeding to step S41.

[0023] As an improvement of the above technical solution, the third preset threshold interval of the voltage data is 1.8V~2.4V, the third preset threshold interval of the current data is 0~0.1A, the third preset threshold interval of the main wavelength data is 620nm~625nm, and the third preset threshold range of the light intensity data is 360mcd~500mcd.

[0024] As an improvement of the above technical solution, step S1 includes:

[0025] S11, performing point measurement on a plurality of new material wafers to obtain point measurement data;

[0026] S12, using an APC machine to perform random testing on a plurality of new wafers, and correcting the point measurement data according to the random testing results to obtain reference data.

[0027] As an improvement of the above technical solution, step S3 includes:

[0028] S31, cutting the new material wafer to be tested to obtain a plurality of separable LED dies;

[0029] S32, expanding the cut new material wafer to be tested, so as to increase the spacing between multiple LED chips.

[0030] As an improvement of the above technical solution, in step S32, the spacing between LED chips is enlarged from 0.08 mm to 0.12 mm to 0.55 mm to 0.8 mm.

[0031] Correspondingly, the present invention also discloses an electronic device, including a memory and a processor, wherein the memory stores a computer program, and the processor implements the steps of the above-mentioned LED wafer testing and correction method when executing the computer program.

[0032] Correspondingly, the present invention further discloses a storage medium on which a computer program is stored. When the computer program is executed by a processor, the steps of the LED wafer testing and correction method according to any one of claims 1 to 8 are implemented.

[0033] The implementation of the present invention has the following beneficial effects:

[0034] In the LED wafer testing and correction method in one embodiment of the present invention, automatic judgment and automatic selection of new material wafers to be tested are performed during the new material wafer spot measurement process; after the LED grains are cut and formed, automatic judgment and automatic selection of LED grains to be tested are also performed, which allows the entire LED wafer testing and correction method to run automatically and continuously without time constraints, reduces waiting and intermittent time in manual operation, and improves work efficiency; and because human errors are reduced, data accuracy is improved. BRIEF DESCRIPTION OF THE DRAWINGS

[0035] Figure 1 It is a flow chart of a LED wafer testing and calibration method in one embodiment of the present invention. DETAILED DESCRIPTION

[0036] In order to make the purpose, technical solution and advantages of the embodiments of the present invention clearer, the technical solution in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0037] It should be noted that, in the absence of conflict, the embodiments and features in the embodiments of the present application may be combined with each other.

[0038] The present invention may be described in the general context of computer-executable instructions executed by a computer, such as program modules. Generally, program modules include routines, programs, objects, components, data structures, etc. that perform specific tasks or implement specific abstract data types. The present invention may also be practiced in distributed computing environments where tasks are performed by remote processing devices connected through a communications network. In a distributed computing environment, program modules may be located in local and remote computer storage media, including storage devices.

[0039] In the present invention, "module", "device", "system" and the like refer to related entities applied to computers, such as hardware, a combination of hardware and software, software or software in execution, etc. In detail, for example, an element can be, but is not limited to, a process, a processor, an object, an executable element, an execution thread, a program and / or a computer running on a processor. In addition, an application or script program running on a server, a server can all be an element. One or more elements can be in an execution process and / or thread, and an element can be localized on a computer and / or distributed between two or more computers, and can be operated by various computer-readable media. An element can also communicate through local and / or remote processes according to a signal with one or more data packets, for example, a signal from a data that interacts with another element in a local system, a distributed system, and / or a network on the Internet through a signal to interact with other systems.

[0040] Finally, it should be noted that, in this article, relational terms such as first and second, etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "include" and "comprise" include not only those elements, but also other elements that are not explicitly listed, or also include elements inherent to such processes, methods, articles or equipment. In the absence of further restrictions, the elements defined by the statement "include..." do not exclude the existence of other identical elements in the process, method, article or equipment that includes the elements.

[0041] See also Figure 1 In a first embodiment, the present invention provides a method for testing and calibrating an LED wafer, which comprises the following steps:

[0042] S1. Conduct spot measurements on multiple new material wafers to obtain benchmark data;

[0043] Specifically, the reference data is test data in conventional LED tests, such as colorimetric data, photometric data or electrical data, and more specifically includes: forward voltage data, reverse voltage data, forward current data, reverse current data, peak wavelength data, dominant wavelength data, color temperature data, color coordinate data, luminous intensity data, luminous flux data and light output power data, but is not limited thereto. Preferably, in one embodiment, the reference data includes forward voltage data, reverse current data, dominant wavelength data and luminous intensity data.

[0044] Specifically, new material wafers refer to new materials that are used for the first time and have not been produced. Since new material wafers have not been calibrated, the data test error is large and IS calibration is required.

[0045] Specifically, the benchmark data can be obtained by point measurement of the full-test machine, but is not limited thereto. Preferably, in one embodiment, step S1 includes:

[0046] S11, performing point measurement on a plurality of new material wafers to obtain point measurement data;

[0047] S12, using an APC machine to perform random testing on a plurality of new wafers, and correcting the point measurement data according to the random testing results to obtain reference data.

[0048] It should be noted that due to the large number of full-test machines, the consistency is often poor. The APC (Automatic Power Control) machine can perform a calibration once to correct the overall deviation of each wafer.

[0049] Specifically, the APC sampling test uses a column of data in the middle of the test wafer as standard data.

[0050] S2, extracting at least one new material wafer from a plurality of new material wafers according to a first preset rule as a new material wafer to be tested;

[0051] Specifically, in one embodiment, one new material wafer is selected from multiple new material wafers as the new material wafer to be tested, and other new material wafers continue to be cut and sorted according to the production process of LED chips. In another embodiment, in order to facilitate the situation where a second, third or even multiple calibrations are required after the subsequent IS calibration, 5 to 10 new material wafers are selected from multiple new material wafers, one of which is used as the new material wafer to be tested, and the others are temporarily stored. If the subsequent IS calibration is qualified, the temporarily stored new material wafer directly enters the normal production line.

[0052] Specifically, the first preset rule may be extracted according to yield data, etc., but is not limited thereto. Preferably, in one embodiment, S2 includes:

[0053] S21, obtaining yield data and deviation data of the target new material wafer according to the benchmark data, wherein the yield data includes overall yield, voltage yield, current yield, main wavelength yield and light intensity yield; and the deviation data includes main wavelength deviation and light intensity deviation;

[0054] S22, determining whether the yield data and deviation data of the target new material wafer are within a second preset threshold range, if so, taking the target new material wafer as the new material wafer to be tested; if not, extracting another new material wafer as the target new material wafer and entering step S21.

[0055] Specifically, the second preset threshold interval of the overall yield is 85% to 100%, the second preset threshold interval of the voltage yield is 90% to 100%, the second preset threshold interval of the current yield is 90% to 100%, the second preset threshold interval of the main wavelength yield is 90% to 100%, and the second preset threshold interval of the light intensity yield is 90% to 100%;

[0056] The second preset threshold interval of the main wavelength deviation is 0 to 0.5 nm, and the second preset threshold interval of the light intensity deviation is 0 to 20 mcd.

[0057] S3, cutting the new material wafer to be tested to obtain a plurality of LED chips;

[0058] Specifically, the new material wafer to be tested is cut according to the preset LED die pattern to obtain multiple LED dies that can be separately divided. It should be noted that in this step, other new material wafers that are not used as new material wafers to be tested will also be cut, that is, the IS calibration procedure does not affect the normal operation of the assembly line.

[0059] Preferably, in one embodiment, step S3 includes:

[0060] S31, cutting the new material wafer to be tested to obtain a plurality of separable LED dies;

[0061] S32, expanding the cut new material wafer to be tested, so as to increase the spacing between multiple LED chips.

[0062] Specifically, after dicing, the LED dies are closely arranged with a small spacing (0.08mm to 0.12mm), which is not conducive to subsequent process operations. Therefore, a wafer expander is used to expand the film of the wafer, stretching the spacing of the LED dies to about 0.55mm to 0.8nn, which can facilitate subsequent die sorting operations.

[0063] S4, extracting a plurality of LED dies from the plurality of LED dies according to a second preset rule as LED dies to be tested;

[0064] Specifically, the LED die may be extracted according to any data in the reference data of the LED die, but is not limited thereto. Preferably, in one embodiment, step S4 includes:

[0065] S41, randomly selecting an LED die obtained by cutting and sorting the new material wafer to be tested as a target LED die;

[0066] S42, determine whether the forward voltage data, reverse current data, main wavelength data, and light intensity data of the target LED crystal are within a third preset threshold range. If so, use the target LED crystal as the LED crystal to be tested; if not, proceed to step S41.

[0067] Among them, the third preset threshold interval of the voltage data is 1.8V~2.4V, the third preset threshold interval of the current data is 0~0.1A, the third preset threshold interval of the main wavelength data is 620nm~625nm, and the third preset threshold range of the light intensity data is 360mcd~500mcd.

[0068] S5, performing packaging test on a plurality of LED chips to be tested to obtain calibration data;

[0069] Specifically, the calibration data can be obtained by performing packaging test on the LED die to be tested according to the conventional IS calibration process. The calibration data can be the test data in the conventional LED test, such as colorimetric data, photometric data or electrical data, and more specifically includes: forward voltage data, reverse voltage data, forward current data, reverse current data, peak wavelength data, dominant wavelength data, color temperature data, color coordinate data, luminous intensity data, luminous flux data and light output power data, etc., but not limited thereto. Preferably, in one embodiment, the calibration data includes forward voltage data, reverse current data, dominant wavelength data and luminous intensity data.

[0070] S6, comparing the calibration data with the reference data of the new material wafer to be tested, and determining whether the reference data is within a first preset threshold range;

[0071] Specifically, the correction data obtained by the IS correction process can be compared with the reference data to make a judgment. For example, in one embodiment, taking the main wavelength (LOP) data as an example, the maximum and minimum values ​​obtained by the IS correction process are taken as the first preset threshold interval, and then the reference data is judged.

[0072] S7, when the judgment is no, another new material wafer is used as the new material wafer to be tested, and the process goes to step S3;

[0073] S8. When the judgment is yes, a correction coefficient is obtained according to the correction data and the reference data, and the reference data of other new material wafers are corrected to obtain target data.

[0074] Specifically, in one embodiment, the correction data IS-LOP is compared with the reference data PB-LOP, and more specifically, IS-LOP / PB-LOP is used as a correction coefficient, but not limited thereto.

[0075] Based on the above-mentioned wafer test correction method, the entire LED wafer test correction method can be automatically and continuously operated without time limit, reducing the waiting and interval time in manual operation and improving work efficiency; and because of the reduction of manual errors, the data accuracy is improved.

[0076] Accordingly, in a second embodiment, the present invention provides an electronic device, wherein the computer may include a processor and a memory. The memory may be used to store or cache various data files that need to be processed and / or used for communication, as well as possible computer program commands executed by the processor. The processor implements any of the LED wafer test and correction methods in the above embodiments by reading and executing the computer program commands stored in the memory.

[0077] Specifically, the processor may include a central processing unit (CPU), or an application specific integrated circuit (ASIC), or may be configured to implement one or more integrated circuits of the embodiments of the present application.

[0078] Among them, the memory may include a large capacity memory for data or commands. By way of example and not limitation, the memory may include a hard disk drive (HDD), a floppy disk drive, a solid state drive (SSD), a flash memory, an optical disk, a magneto-optical disk, a magnetic tape, or a universal serial bus (USB) drive, or a combination of two or more of these. Where appropriate, the memory may include a removable or non-removable (or fixed) medium. Where appropriate, the memory may be inside or outside the data processing device. In a specific embodiment, the memory is a non-volatile memory. In a specific embodiment, the memory includes a read-only memory (ROM) and a random access memory (RAM). Where appropriate, the ROM may be a mask-programmed ROM, a programmable ROM (Programmable Read Only Memory, abbreviated as PROM), an erasable PROM (Erasable Programmable Read Only Memory, abbreviated as EPROM), an electrically erasable PROM (Electrically Erasable Programmable Read Only Memory, abbreviated as EEPROM), an electrically alterable ROM (Electrically Alterable Read Only Memory, abbreviated as EAROM) or a flash memory (FLASH) or a combination of two or more of the above. Under appropriate circumstances, the RAM can be a static random access memory (SRAM) or a dynamic random access memory (DRAM), wherein the DRAM can be a fast page mode dynamic random access memory (FPMDRAM), an extended data output dynamic random access memory (EDODRAM), a synchronous dynamic random access memory (SDRAM), etc.

[0079] In some embodiments, the computer may further include a communication interface and a bus. The processor, the memory, and the communication interface are connected through the bus and communicate with each other.

[0080] The communication interface is used to realize the communication between the modules, devices, units and / or equipment in the embodiments of the present application. The communication interface can also realize data communication with other components such as: external devices, image / data acquisition equipment, databases, external storage, and image / data processing workstations.

[0081] The bus includes hardware, software or both, and couples the components of the computer to each other. The bus includes but is not limited to at least one of the following: data bus, address bus, control bus, expansion bus, and local bus. By way of example and not limitation, the bus may include an Accelerated Graphics Port (AGP) or other graphics bus, an Extended Industry Standard Architecture (EISA) bus, a Front Side Bus (FSB), a Hyper Transport (HT) interconnect, an Industry Standard Architecture (ISA) bus, an InfiniBand interconnect, a Low Pin Count (LPC) bus, a memory bus, a Micro Channel Architecture (MCA) bus, a Peripheral Component Interconnect (PCI) bus, a PCI Express (PCI X) bus, a Serial Advanced Technology Attachment (SATA) bus, a Video Electronics Standards Association Local Bus (VLB) bus, or other suitable buses or a combination of two or more of these. Where appropriate, the bus may include one or more buses. Although embodiments of the present application describe and illustrate a particular bus, the present application contemplates any suitable bus or interconnect.

[0082] The electronic device of the embodiment of the present application exists in various forms, including but not limited to:

[0083] (1) Mobile communication devices: These devices are characterized by their mobile communication functions and their main purpose is to provide voice and data communications. These terminals include: smart phones (such as iPhone), multimedia phones, functional phones, etc.

[0084] (2) Ultra-mobile personal computer devices: These devices fall into the category of personal computers, have computing and processing capabilities, and generally also have mobile Internet access features. These terminals include: PDA, MID and UMPC devices, such as iPad.

[0085] (3) Portable entertainment devices: These devices can display and play multimedia content. They include audio and video players (such as iPods), handheld game consoles, e-books, as well as smart toys and portable car navigation devices.

[0086] (4) Server: A device that provides computing services. The server consists of a processor, hard disk, memory, system bus, etc. The server is similar to a general computer architecture, but because it needs to provide highly reliable services, it has higher requirements in terms of processing power, stability, reliability, security, scalability, and manageability.

[0087] (5) Other electronic devices with data interaction functions.

[0088] In the description of this specification, the description with reference to the terms "one embodiment", "some embodiments", "example", "specific example", or "some examples" means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present application. In this specification, the schematic representation of the above terms does not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described may be combined in any one or more embodiments or examples in a suitable manner.

[0089] Although the embodiments of the present application have been shown and described, those skilled in the art will appreciate that various changes, modifications, substitutions and variations may be made to the embodiments without departing from the principles and spirit of the present application, and that the scope of the present application is defined by the claims and their equivalents.

Claims

1. A LED wafer testing and calibration method, characterized in that: The following steps are involved: S1. Conduct spot measurements on multiple new material wafers to obtain benchmark data; S2, extracting at least one new material wafer from a plurality of new material wafers according to a first preset rule as a new material wafer to be tested; S3, cutting the new material wafer to be tested to obtain a plurality of LED chips; S4, extracting a plurality of LED dies from the plurality of LED dies according to a second preset rule as LED dies to be tested; S5, performing packaging test on a plurality of LED chips to be tested to obtain calibration data; S6, comparing the calibration data with the reference data of the new material wafer to be tested, and determining whether the reference data is within a first preset threshold range; S7, when the judgment is no, another new material wafer is used as the new material wafer to be tested, and the process goes to step S3; S8. When the judgment is yes, a correction coefficient is obtained according to the correction data and the reference data, and the reference data of other new material wafers are corrected to obtain target data.

2. The LED wafer testing and calibration method according to claim 1, characterized in that: Step S2 includes: S21, obtaining yield data and deviation data of the target new material wafer according to the benchmark data, wherein the yield data includes overall yield, voltage yield, current yield, main wavelength yield and light intensity yield; and the deviation data includes main wavelength deviation and light intensity deviation; S22, determining whether the yield data and deviation data of the target new material wafer are within a second preset threshold range, if so, taking the target new material wafer as the new material wafer to be tested; if not, extracting another new material wafer as the target new material wafer and entering step S21.

3. The LED wafer testing and calibration method according to claim 2, characterized in that: The second preset threshold interval of the overall yield is 85% to 100%, the second preset threshold interval of the voltage yield is 90% to 100%, the second preset threshold interval of the current yield is 90% to 100%, the second preset threshold interval of the main wavelength yield is 90% to 100%, and the second preset threshold interval of the light intensity yield is 90% to 100%; The second preset threshold interval of the main wavelength deviation is 0 to 0.5 nm, and the second preset threshold interval of the light intensity deviation is 0 to 20 mcd.

4. The LED wafer testing and calibration method according to claim 1, wherein: Step S4 includes: S41, randomly selecting an LED die obtained by cutting and sorting the new material wafer to be tested as a target LED die; S42, determine whether the forward voltage data, reverse current data, main wavelength data, and light intensity data of the target LED crystal are within a third preset threshold range. If so, use the target LED crystal as the LED crystal to be tested; if not, proceed to step S41.

5. The LED wafer testing and calibration method according to claim 4, characterized in that: The third preset threshold interval of the voltage data is 1.8V to 2.4V, the third preset threshold interval of the current data is 0 to 0.1A, the third preset threshold interval of the main wavelength data is 620nm to 625nm, and the third preset threshold range of the light intensity data is 360mcd to 500mcd.

6. The LED wafer testing and calibration method according to claim 1, wherein: Step S1 includes: S11, performing point measurement on a plurality of new material wafers to obtain point measurement data; S12, using an APC machine to perform random testing on a plurality of new wafers, and correcting the point measurement data according to the random testing results to obtain reference data.

7. The LED wafer testing and calibration method according to claim 1, wherein: Step S3 includes: S31, cutting the new material wafer to be tested to obtain a plurality of separable LED dies; S32, expanding the cut new material wafer to be tested, so as to increase the spacing between multiple LED chips.

8. The LED wafer testing and calibration method according to claim 7, characterized in that: In step S32, the spacing between LED chips is enlarged from 0.08 mm to 0.12 mm to 0.55 mm to 0.8 mm.

9. An electronic device comprising a memory and a processor, wherein the memory stores a computer program, wherein: When the processor executes the computer program, the steps of the LED wafer testing and correction method according to any one of claims 1 to 8 are implemented.

10. A storage medium having a computer program stored thereon, characterized in that: When the computer program is executed by a processor, the steps of the LED wafer testing and correction method according to any one of claims 1 to 8 are implemented.

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