Intelligent power module and intelligent power module control system

Abstract

The invention discloses an intelligent power module and an intelligent power module control system, and the intelligent power module comprises a high-side IGBT, the collector electrode of the high-side IGBT is connected to a power supply, and the emitter electrode of the high-side IGBT is connected to load equipment; the collector electrode of the low-side IGBT is connected with the emitter electrode of the high-side IGBT, and the emitter electrode of the low-side IGBT is grounded; the low-side gate driving circuit is connected with the gate of the low-side IGBT and is used for switching on or switching off the low-side IGBT; and the voltage acquisition control circuit is connected with the collector electrode of the high-side IGBT, the emitter electrode of the high-side IGBT and the low-side gate drive circuit, and is used for detecting a first voltage of the collector electrode of the high-side IGBT and a second voltage of the emitter electrode of the high-side IGBT, and controlling the low-side gate drive circuit to conduct the low-side IGBT when the first voltage and the second voltage meet preset conditions, so that the low-side IGBT is switched on. And when the first voltage and the second voltage do not meet the preset condition, the low-side gate drive circuit is controlled to disconnect the low-side IGBT. According to the intelligent power module and the intelligent power module control system, short-circuit current can be effectively prevented from being generated when the low-side IGBT is conducted.

Description

Technical Field

[0001] The present application relates to the field of integrated circuit technology, and more particularly to an intelligent power module and an intelligent power module control system. Background Art

[0002] Intelligent Power Module (IPM) is commonly used in three-phase inverter circuits such as home appliances, industrial machines and automotive products.

[0003] In an intelligent power module, short-circuit current is easily generated due to the delay time when the high-side IGBT (Insulated Gate Bipolar Transistor) and the low-side IGBT switch the switch state (ON / OFF). The reason is that the control / driver IC cannot identify the switch state of the target IGBT.

[0004] In order to prevent short-circuit current, a sufficient dead time margin (the time for both the high-side IGBT and the low-side IGBT to be in the OFF state at the same time) is usually left when switching the IGBT switch state on the input signal side to prevent the occurrence of short-circuit current. However, using such an input signal will lead to poor controllability when the load current is close to 0% and 100%, thereby reducing load efficiency.

[0005] Therefore, improvements are needed to at least partially solve the above problems. Summary of the invention

[0006] The embodiments of the present application provide an intelligent power module and an intelligent power module control system, which are used to avoid short-circuit current when switching the low-side IGBT switch state.

[0007] In a first aspect, the present application provides an intelligent power module, comprising:

[0008] A high-side IGBT, wherein the collector of the high-side IGBT is connected to a power source, and the emitter of the high-side IGBT is connected to a load device;

[0009] A low-side IGBT, wherein the collector of the low-side IGBT is connected to the emitter of the high-side IGBT, and the emitter of the low-side IGBT is grounded;

[0010] A low-side gate drive circuit, connected to the gate of the low-side IGBT, for turning on or off the low-side IGBT;

[0011] A voltage acquisition control circuit is connected to the collector of the high-side IGBT, the emitter of the high-side IGBT and the low-side gate drive circuit, and is used to detect a first voltage of the collector of the high-side IGBT and a second voltage of the emitter of the high-side IGBT, and when the first voltage and the second voltage meet a preset condition, send a first control signal to the low-side gate drive circuit to control the low-side gate drive circuit to turn on the low-side IGBT, and when the first voltage and the second voltage do not meet the preset condition, send a second control signal to the low-side gate drive circuit to control the low-side gate drive circuit to turn off the low-side IGBT;

[0012] Wherein, when the first voltage and the second voltage meet the preset condition, the high-side IGBT is in a disconnected state.

[0013] The above technical solution has the following advantages and beneficial effects: the first voltage of the collector of the high-side IGBT and the second voltage of the emitter of the high-side IGBT can be detected by the voltage acquisition control circuit, and based on whether the first voltage and the second voltage meet the preset conditions (that is, based on the switching state of the high-side IGBT), the low-side gate drive circuit is controlled to turn on or off the low-side IGBT, so that the low-side IGBT can be turned on at the best time (when the high-side IGBT is in the off state), and the short-circuit current generated by the low-side IGBT being turned on when the high-side IGBT is in the on state can be effectively avoided. There is no need to leave a dead time with sufficient margin when the low-side IGBT switch state is switched, thereby effectively improving the efficiency of the load equipment.

[0014] In one implementation, the preset condition is:

[0015] Ve>Vc; or,

[0016] Ve<Vc-2Vcesat;

[0017] Among them, Ve is the second voltage, Vc is the first voltage, and Vcesat is the saturation voltage of the high-side IGBT.

[0018] The above technical solution has the following advantages and beneficial effects: when the above preset conditions are met, it can ensure that the high-side IGBT is in the off state.

[0019] In one implementation, the voltage acquisition control circuit includes:

[0020] a voltage sampling device, connected to the collector of the high-side IGBT and the emitter of the high-side IGBT, and used for sampling the first voltage and the second voltage;

[0021] A first voltage detection device, connected to the voltage sampling device, for detecting whether the first voltage and the second voltage satisfy Ve>Vc;

[0022] A second voltage detection device, connected to the voltage sampling device, for detecting whether the first voltage and the second voltage satisfy Ve<Vc-2Vcesat;

[0023] A control device is connected to the first voltage detection device, the second voltage detection device and the low-side gate drive circuit, and is used to send the first control signal or the second control signal to the low-side gate drive circuit according to the detection results of the first voltage detection device and the second voltage detection device.

[0024] The above technical solution has the following advantages and beneficial effects: by detecting two preset conditions respectively by the first voltage detection device and the second voltage detection device, the on-off state of the high-side IGBT can be determined more comprehensively and accurately.

[0025] In one implementation, the voltage sampling device includes a first resistor R1, a second resistor R2, a third resistor R3, a fourth resistor R4, a fifth resistor R5 and a sixth resistor R6;

[0026] A first end of the first resistor R1 is connected to the emitter of the high-side IGBT, a second end of the first resistor R1 is connected to a first end of the second resistor R2, and a second end of the second resistor R2 is grounded;

[0027] A first end of the third resistor R3 is connected to the collector of the high-side IGBT, a second end of the third resistor R3 is connected to a first end of the fourth resistor R4, and a second end of the fourth resistor R4 is grounded;

[0028] A first end of the fifth resistor R5 is connected to the collector of the high-side IGBT, a second end of the fifth resistor R5 is connected to a first end of the sixth resistor R6, and a second end of the sixth resistor R6 is grounded.

[0029] In one implementation, the voltage sampling device includes a first resistor R1, a second resistor R2, a third resistor R3, a fourth resistor R4, a fifth resistor R5 and a sixth resistor R6;

[0030] A first end of the first resistor R1 is connected to the collector of the high-side IGBT, a second end of the first resistor R1 is connected to a first end of the second resistor R2, and a second end of the second resistor R2 is grounded;

[0031] The first end of the third resistor R3 is connected to the emitter of the high-side IGBT, the second end of the third resistor R3 is connected to the first end of the fourth resistor R4, and the second end of the fourth resistor R4 is grounded;

[0032] A first end of the fifth resistor R5 is connected to the emitter of the high-side IGBT, a second end of the fifth resistor R5 is connected to a first end of the sixth resistor R6, and a second end of the sixth resistor R6 is grounded.

[0033] In one embodiment, the first voltage detection device is a first comparator, a first input terminal of the first comparator is connected to the second terminal of the first resistor R1, a second input terminal of the first comparator is connected to the second terminal of the third resistor R3, and an output terminal of the first comparator is connected to the control device;

[0034] The second voltage detection device is a second comparator, a first input terminal of the second comparator is connected to the second end of the first resistor R1, a second input terminal of the second comparator is connected to the second end of the fifth resistor R5, and an output terminal of the second comparator is connected to the control device.

[0035] In one embodiment, the control device is a NAND gate device, a first input terminal of the NAND gate device is connected to the output terminal of the first comparator, a second input terminal of the NAND gate device is connected to the output terminal of the second comparator, and an output terminal of the NAND gate device is connected to the low-side gate drive circuit.

[0036] In one embodiment, the low-side gate drive circuit includes:

[0037] A drive signal receiving sub-circuit, used for receiving a low-side IGBT drive signal, wherein the low-side IGBT drive signal is used for turning on or off the low-side IGBT;

[0038] The level conversion device is connected to the drive signal receiving sub-circuit and the voltage acquisition control circuit;

[0039] a driving subcircuit connected to the level conversion device and the gate of the low-side IGBT;

[0040] The level conversion device is used to perform level conversion on the first control signal, and provide the converted level signal to the driving sub-circuit to drive the driving sub-circuit to turn on the low-side IGBT.

[0041] In one embodiment, the voltage acquisition control circuit is connected to the drive signal receiving sub-circuit, and is used to send the second control signal to the low-side gate drive circuit to control the low-side gate drive circuit to disconnect the low-side IGBT when the low-side IGBT drive signal is used to turn on the low-side IGBT and the first voltage and the second voltage do not meet the preset conditions.

[0042] The above technical solution has the following advantages and beneficial effects: when the high-side IGBT is in the on state, even if the low-side IGBT driving signal for turning on the low-side IGBT is erroneously input, the low-side IGBT can be kept in the off state, thereby effectively preventing IGBT damage caused by abnormal current.

[0043] In a second aspect, the present application provides an intelligent power module control system, which includes the intelligent power module as described above and a load device, wherein the load device is connected to the emitter of the high-side IGBT. BRIEF DESCRIPTION OF THE DRAWINGS

[0044] The following drawings of the present application are hereby used as part of the present application for understanding the present application. The drawings show the embodiments of the present application and their descriptions, and are used to explain the device and principle of the present application. In the drawings,

[0045] Figure 1 is a structural schematic diagram of an intelligent power module according to an embodiment of the present application;

[0046] Figure 2 is a detailed structural diagram of an intelligent power module according to an embodiment of the present application;

[0047] Figure 3 is a detailed structural diagram of an intelligent power module according to an embodiment of the present application;

[0048] Figure 4 Schematic diagram of the structure of an intelligent power module control system according to an embodiment of the present application.

[0049] Description of reference numerals:

[0050] 100-intelligent power module, 110-high-side IGBT, 120-low-side IGBT, 130-low-side gate drive circuit, 131-drive signal receiving sub-circuit, 132-level conversion device, 133-drive sub-circuit, 140-voltage acquisition control circuit, 141-voltage sampling device, 142-first voltage detection device, 143-second voltage detection device, 144-control device;

[0051] 200- load equipment;

[0052] 300-power supply;

[0053] 1000-Intelligent power module control system. DETAILED DESCRIPTION

[0054] In the following description, a large number of specific details are provided to provide a more thorough understanding of the present application. However, it is apparent to those skilled in the art that the present application can be implemented without one or more of these details. In other examples, in order to avoid confusion with the present application, some technical features well known in the art are not described.

[0055] It should be understood that the present application can be implemented in different forms and should not be construed as being limited to the embodiments presented herein. On the contrary, providing these embodiments will make the disclosure thorough and complete and fully convey the scope of the present application to those skilled in the art. In the accompanying drawings, the sizes and relative sizes of layers and regions may be exaggerated for clarity. The same reference numerals throughout represent the same elements.

[0056] It should be understood that although the terms first, second, third, etc. can be used to describe various elements, components, regions, layers and / or parts, these elements, components, regions, layers and / or parts should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or part from another element, component, region, layer or part. Therefore, without departing from the teachings of the present application, the first element, component, region, layer or part discussed below can be represented as a second element, component, region, layer or part.

[0057] Spatially relative terms such as "under", "beneath", "below", "under", "above", "above", etc., may be used herein for convenience of description to describe the relationship of one element or feature to other elements or features shown in the figures. It should be understood that the spatially relative terms are intended to encompass different orientations of the device in use and operation in addition to the orientation shown in the figures.

[0058] The purpose of the terms used herein is only to describe specific embodiments and is not intended to be limiting of the present application. When used herein, the singular forms "one", "an" and "said / the" are also intended to include plural forms, unless the context clearly indicates otherwise. It should also be understood that the terms "consisting of" and / or "comprising", when used in this specification, determine the presence of the features, integers, steps, operations, elements and / or parts, but do not exclude the presence or addition of one or more other features, integers, steps, operations, elements, parts and / or groups. When used herein, the term "and / or" includes any and all combinations of the relevant listed items.

[0059] Embodiments of the invention are described herein with reference to cross-sectional views as schematic diagrams of ideal embodiments (and intermediate structures) of the present application. Thus, variations in the shapes shown due to, for example, manufacturing techniques and / or tolerances can be expected. Therefore, embodiments of the present application should not be limited to the specific shapes shown herein, but include shape deviations due to, for example, manufacturing. Therefore, what is shown in the figures is schematic in nature, and their shapes are not intended to display the actual shape of the device and are not intended to limit the scope of the present application.

[0060] See attached Figure 1 An intelligent power module 100 according to an embodiment of the present application is exemplarily described. The intelligent power module 100 includes a high-side IGBT 110 , a low-side IGBT 120 , a low-side gate drive circuit 130 , and a voltage acquisition control circuit 140 .

[0061] The collector of the high-side IGBT 110 is connected to the power supply 300, and the emitter of the high-side IGBT 110 is connected to the load device 200. Among them, the gate of the high-side IGBT 110 is connected to the high-side gate drive circuit, and the high-side gate drive circuit is used to turn on or off the high-side IGBT 110. It should be noted that turning on or off the IGBT is to open or close the IGBT. Turning on the IGBT means providing a drive signal to the gate of the IGBT to conduct between the collector and the emitter of the IGBT, and turning off the IGBT means providing a drive signal to the gate of the IGBT to disconnect between the collector and the emitter of the IGBT.

[0062] The collector of the low-side IGBT 120 is connected to the emitter of the high-side IGBT 110 , and the emitter of the low-side IGBT 120 is grounded.

[0063] The low-side gate driving circuit 130 is connected to the gate of the low-side IGBT 120 to turn on or off the low-side IGBT 120 .

[0064] The voltage acquisition control circuit 140 is connected to the collector of the high-side IGBT 110, the emitter of the high-side IGBT 110 and the low-side gate drive circuit 130, and is used to detect a first voltage of the collector of the high-side IGBT 110 and a second voltage of the emitter of the high-side IGBT 110, and when the first voltage and the second voltage meet a preset condition, a first control signal is sent to the low-side gate drive circuit 130 to control the low-side gate drive circuit 130 to turn on the low-side IGBT 120, and when the first voltage and the second voltage do not meet the preset condition, a second control signal is sent to the low-side gate drive circuit 130 to control the low-side gate drive circuit 130 to disconnect the low-side IGBT 120.

[0065] When the first voltage and the second voltage meet the preset conditions, the high-side IGBT 110 is in the off state. At this time, the low-side gate drive circuit 130 can be controlled to turn on the low-side IGBT 120 without causing a short circuit. When the first voltage and the second voltage do not meet the preset conditions, the high-side IGBT 110 is likely to be in the on state. At this time, it is necessary to control the low-side gate drive circuit 130 to turn off the low-side IGBT 120 to avoid causing a short circuit.

[0066] That is to say, the technical solution of the present application is to detect the first voltage of the collector of the high-side IGBT 110 and the second voltage of the emitter of the high-side IGBT 110 through the voltage acquisition control circuit 140, and determine the on-off state (switch state) of the high-side IGBT 110 based on whether the first voltage and the second voltage meet the preset conditions, and when the high-side IGBT 110 is in the off state, send a first control signal to the low-side gate drive circuit 130 to control the low-side gate drive circuit 130 to turn on the low-side IGBT 120; when the high-side IGBT 110 is in the on state, send a second control signal to the low-side gate drive circuit 130 to control the low-side gate drive circuit 130 to turn off the low-side IGBT 120. The technical solution of the present application can turn on the low-side IGBT 120 at the optimal time (when the high-side IGBT 110 is in the off state), which can effectively avoid the short-circuit current generated by the low-side IGBT 120 being turned on when the high-side IGBT 110 is in the on state. There is no need to leave a dead time with sufficient margin when the switch state of the low-side IGBT 120 is switched, thereby effectively improving the efficiency of the load device 200.

[0067] It should be noted that the technical personnel of the present application have found through research that when the high-side IGBT 110 is in the on state, the second voltage of the emitter of the high-side IGBT 110 is substantially equal to the first voltage of the collector of the high-side IGBT 110 minus the saturation voltage of the high-side IGBT 110 due to the influence of the saturation voltage of the high-side IGBT 110. When the second voltage of the emitter of the high-side IGBT 110 is significantly lower than the difference obtained by subtracting the first voltage of the collector of the high-side IGBT 110 from the saturation voltage of the high-side IGBT 110, it indicates that the high-side IGBT 110 is in the off state. In addition, when the high-side IGBT 110 is in the off state, but the low-side IGBT 120 switches from the on state to the off state, the switching of the on-off state of the low-side IGBT 120 will be accompanied by the generation of back electromotive force. At this time, the second voltage of the emitter of the high-side IGBT 110 may be higher than the first voltage of the collector of the high-side IGBT 110. It can be seen that the on-off state of the high-side IGBT110 is closely related to the first voltage of the collector of the high-side IGBT110 and the second voltage of the emitter of the high-side IGBT110. Therefore, a suitable preset condition can be configured accordingly, so that when the first voltage and the second voltage meet the preset condition, the high-side IGBT110 is in the off state, and when the first voltage and the second voltage do not meet the preset condition, the high-side IGBT110 is in the on state.

[0068] In this embodiment, the preset condition is Ve>Vc or Ve<Vc-2Vcesat. Among them, Ve is the second voltage of the emitter of the high-side IGBT110, Vc is the first voltage of the collector of the high-side IGBT110, and Vcesat is the saturation voltage of the high-side IGBT110. When the first voltage Vc of the collector of the high-side IGBT110 and the second voltage Ve of the emitter of the high-side IGBT110 satisfy Ve>Vc, it means that back electromotive force is generated. At this time, the high-side IGBT110 is in the off state, and the low-side IGBT120 is switched from the on state to the off state. When the first voltage Vc of the collector of the high-side IGBT 110 and the second voltage Ve of the emitter of the high-side IGBT 110 satisfy Ve<Vc-2Vcesat, it means that the second voltage Ve of the emitter of the high-side IGBT 110 is significantly lower than the difference (Vc-Vcesat) obtained by subtracting the saturation voltage Vcesat of the high-side IGBT 110 from the first voltage Vc of the collector of the high-side IGBT 110, and the high-side IGBT 110 is in the off state. When Vc-2Vcesat≤Ve≤Vc, the high-side IGBT 110 is likely to be in the on state, and at this time, it is not appropriate to turn on the low-side IGBT 120.

[0069] It should be noted that those skilled in the art may set other appropriate preset conditions. For example, Ve<Vc-2Vcesat may be replaced by Ve<Vc-3Vcesat, etc.

[0070] See attached Figure 2 In one embodiment, the voltage acquisition control circuit 140 includes a voltage sampling device 141 , a first voltage detection device 142 , a second voltage detection device 143 and a control device 144 .

[0071] The voltage sampling device 141 is connected to the collector of the high-side IGBT 110 and the emitter of the high-side IGBT 110, and is used to sample the first voltage and the second voltage. The first voltage detection device 142 is connected to the voltage sampling device 141, and is used to detect whether the first voltage and the second voltage satisfy Ve>Vc. The second voltage detection device 143 is connected to the voltage sampling device 141, and is used to detect whether the first voltage and the second voltage satisfy Ve<Vc-2Vcesat. The control device 144 is connected to the first voltage detection device 142, the second voltage detection device 143 and the low-side gate drive circuit 130, and is used to send a first control signal or a second control signal to the low-side gate drive circuit 130 according to the detection results of the first voltage detection device 142 and the second voltage detection device 143. That is, when the first voltage detection device 142 detects that the first voltage Vc of the collector of the high-side IGBT 110 and the second voltage Ve of the emitter of the high-side IGBT 110 satisfy Ve>Vc, the control device 144 sends a first control signal to the low-side gate drive circuit 130 to control the low-side gate drive circuit 130 to turn on the low-side IGBT 120. When the second voltage detection device 143 detects that the first voltage Vc of the collector of the high-side IGBT 110 and the second voltage Ve of the emitter of the high-side IGBT 110 satisfy Ve<Vc-2Vcesat, the control device 144 sends a first control signal to the low-side gate drive circuit 130 to control the low-side gate drive circuit 130 to turn on the low-side IGBT 120. When the detection result of the first voltage detection device 142 does not satisfy Ve>Vc and the detection result of the second voltage detection device 143 does not satisfy Ve<Vc-2Vcesat, the control device 144 sends a second control signal to the low-side gate drive circuit 130 to control the low-side gate drive circuit 130 to disconnect the low-side IGBT120.

[0072] The technical solution of this embodiment can determine the on-off state of the high-side IGBT 110 more comprehensively and accurately by respectively providing a first voltage detection device 142 and a second voltage detection device 143 to respectively detect the two situations of Ve>Vc and Ve<Vc-2Vcesat.

[0073] See attached Figure 2In one embodiment of the present application, the voltage sampling device 141 includes a first resistor R1, a second resistor R2, a third resistor R3, a fourth resistor R4, a fifth resistor R5 and a sixth resistor R6.

[0074] The first end of the first resistor R1 is connected to the emitter of the high-side IGBT 110, the second end of the first resistor R1 is connected to the first end of the second resistor R2, and the second end of the second resistor R2 is grounded. The first resistor R1 and the second resistor R2 are used to divide the second voltage Ve of the emitter of the high-side IGBT 110, and the voltage of the second end of the first resistor R1 corresponds to the second voltage Ve. It should be noted that the correspondence here does not mean equality, but means that there is a certain proportional relationship between the two.

[0075] The first end of the third resistor R3 is connected to the collector of the high-side IGBT110, the second end of the third resistor R3 is connected to the first end of the fourth resistor R4, and the second end of the fourth resistor R4 is grounded. The first end of the fifth resistor R5 is connected to the collector of the high-side IGBT110, the second end of the fifth resistor R5 is connected to the first end of the sixth resistor R6, and the second end of the sixth resistor R6 is grounded. The third resistor R3 and the fourth resistor R4 are used to divide the first voltage Vc of the collector of the high-side IGBT110, and the fifth resistor R5 and the sixth resistor R6 are also used to divide the first voltage Vc of the collector of the high-side IGBT110. The resistance values ​​of the third resistor R3, the fourth resistor R4, the fifth resistor R5 and the sixth resistor R6 can be set so that the voltage of the second end of the third resistor R3 corresponds to the first voltage Vc, and the voltage of the second end of the fifth resistor R5 corresponds to Vc-2Vcesat. Thus, by comparing the voltage at the second end of the first resistor R1 with the voltage at the second end of the third resistor R3, it can be determined whether the first voltage Vc and the second voltage Ve satisfy Ve>Vc; by comparing the voltage at the second end of the first resistor R1 with the voltage at the second end of the fifth resistor R5, it can be determined whether the first voltage Vc and the second voltage Ve satisfy Ve<Vc-2Vcesat.

[0076] In an embodiment of the present application, the first voltage detection device 142 is a first comparator, a first input terminal of the first comparator is connected to the second terminal of the first resistor R1, a second input terminal of the first comparator is connected to the second terminal of the third resistor R3, and an output terminal of the first comparator is connected to the control device 144. Exemplarily, the first comparator can output a low level to the control device 144 when the voltage at the second terminal of the first resistor R1 is greater than the voltage at the second terminal of the third resistor R3, that is, when Ve>Vc, and vice versa, output a high level to the control device 144.

[0077] The second voltage detection device 143 is a second comparator, a first input terminal of the second comparator is connected to the second terminal of the first resistor R1, a second input terminal of the second comparator is connected to the second terminal of the fifth resistor R5, and an output terminal of the second comparator is connected to the control device 144. Exemplarily, the second comparator can output a low level to the control device 144 when the voltage at the second terminal of the first resistor R1 is less than the voltage at the second terminal of the fifth resistor R5, that is, when Ve<Vc-2Vcesat, and vice versa, output a high level to the control device 144.

[0078] In one embodiment of the present application, the control device 144 is a NAND gate device, a first input terminal of the NAND gate device is connected to the output terminal of the first comparator, a second input terminal of the NAND gate device is connected to the output terminal of the second comparator, and an output terminal of the NAND gate device is connected to the low-side gate drive circuit 130. Exemplarily, the NAND gate device is used to output a high level (i.e., a first control signal) to the low-side gate drive circuit 130 when any one of the first voltage detection device 142 and the second voltage detection device 143 outputs a low level, so as to control the low-side gate drive circuit 130 to turn on the low-side IGBT 120, and when the first voltage detection device 142 and the second voltage detection device 143 simultaneously output a high level, output a low level (i.e., a second control signal) to the low-side gate drive circuit 130 to control the low-side gate drive circuit 130 to turn off the low-side IGBT 120.

[0079] According to the voltage acquisition control circuit 140 of this embodiment, the components constituting the circuit can use low-voltage components in the low-side driver IC (that is, the existing IC process can be used), without adding external components and without additional functional terminals (pin compatibility can be achieved).

[0080] See attached Figure 2 In one embodiment of the present application, the low-side gate driving circuit 130 includes a driving signal receiving sub-circuit 131 , a level conversion device 132 , and a driving sub-circuit 133 .

[0081] The drive signal receiving subcircuit 131 is used to receive the low-side IGBT drive signal, and the low-side IGBT drive signal is used to turn on or off the low-side IGBT 120. Exemplarily, the drive signal receiving subcircuit 131 includes a PMOS tube and an NMOS tube arranged in series, the source of the PMOS tube is connected to a voltage source VDD and a level conversion device 132, the drain of the PMOS tube is connected to the drain of the NMOS tube, the source of the NMOS tube is grounded, and the gates of the PMOS tube and the NMOS tube are connected to the low-side IGBT drive signal input terminal IN, and the low-side IGBT drive signal input terminal IN is used to receive the low-side IGBT drive signal.

[0082] The level conversion device 132 is connected to the drive signal receiving subcircuit 131 and the voltage acquisition control circuit 140, and the drive subcircuit 133 is connected to the level conversion device 132 and the gate of the low-side IGBT 120. The drive subcircuit 133 may include a pre-stage drive subcircuit 133 and an output drive subcircuit 133, the pre-stage drive subcircuit 133 includes a first amplifier and a second amplifier, the input ends of the first amplifier and the second amplifier are both connected to the level conversion device 132, and the output drive subcircuit 133 includes a PMOS tube, an NMOS tube, a resistor Ron and a resistor Roff, wherein the source of the PMOS tube is connected to a voltage source VCC, the drain of the PMOS tube is connected to the first end of the resistor Ron, the second end of the resistor Ron is connected to the first end of the resistor Roff and the gate of the low-side IGBT 120, the second end of the resistor Roff is connected to the drain of the NMOS tube, the source of the NMOS tube is grounded, the gate of the PMOS tube is connected to the output end of the first amplifier, and the gate of the NMOS tube is connected to the output end of the second amplifier.

[0083] The level conversion device 132 is used to convert the level of the first control signal (e.g., a high level signal) and provide the converted level signal to the driver subcircuit 133 to drive the driver subcircuit 133 to turn on the low-side IGBT 120. The level conversion device 132 is used to drive the driver subcircuit 133 to turn off the low-side IGBT 120 when receiving the second control signal (e.g., a low level signal). Exemplarily, the level conversion device 132 can also be used to convert the low-side IGBT drive signal.

[0084] See attached Figure 2In one embodiment of the present application, the voltage acquisition control circuit 140 is connected to the drive signal receiving subcircuit 131, and is used to send a second control signal to the low-side gate drive circuit 130 to control the low-side gate drive circuit 130 to disconnect the low-side IGBT 120 when the low-side IGBT drive signal is used to turn on the low-side IGBT 120 and the first voltage and the second voltage do not meet the preset conditions. Exemplarily, the third input terminal of the control device 144 can be connected to the drive signal receiving subcircuit 131, and is used to send a second control signal to the level conversion device 132 based on the detection results of the first voltage detection device 142, the second voltage detection device 143 and the low-side IGBT drive signal at the same time. Specifically, when the low-side IGBT drive signal is used to turn on the low-side IGBT 120, and the first voltage and the second voltage do not meet the preset conditions (that is, when the high-side IGBT 110 is likely to be in the on state), the second control signal is sent to the low-side gate drive circuit 130 to control the low-side gate drive circuit 130 to disconnect the low-side IGBT 120. Therefore, when the high-side IGBT 110 is in the on state, even if the low-side IGBT driving signal for turning on the low-side IGBT 120 is erroneously input, the low-side IGBT 120 can be kept in the off state, thereby effectively preventing the IGBT from being damaged by abnormal current.

[0085] See attached Figure 3 In another embodiment of the present application, the voltage sampling device 141 includes a first resistor R1, a second resistor R2, a third resistor R3, a fourth resistor R4, a fifth resistor R5 and a sixth resistor R6.

[0086] The first end of the first resistor R1 is connected to the collector of the high-side IGBT 110, the second end of the first resistor R1 is connected to the first end of the second resistor R2, and the second end of the second resistor R2 is grounded. The first resistor R1 and the second resistor R2 are used to divide the first voltage Vc of the collector of the high-side IGBT 110, and the voltage of the second end of the first resistor R1 corresponds to the first voltage Vc. It should be noted that the correspondence here does not mean equality, but means that there is a certain proportional relationship between the two.

[0087] The first end of the third resistor R3 is connected to the emitter of the high-side IGBT110, the second end of the third resistor R3 is connected to the first end of the fourth resistor R4, and the second end of the fourth resistor R4 is grounded. The first end of the fifth resistor R5 is connected to the emitter of the high-side IGBT110, the second end of the fifth resistor R5 is connected to the first end of the sixth resistor R6, and the second end of the sixth resistor R6 is grounded. The third resistor R3 and the fourth resistor R4 are used to divide the second voltage Ve of the collector of the high-side IGBT110, and the fifth resistor R5 and the sixth resistor R6 are also used to divide the second voltage Ve of the collector of the high-side IGBT110. The resistance values ​​of the third resistor R3, the fourth resistor R4, the fifth resistor R5 and the sixth resistor R6 can be set so that the voltage of the second end of the third resistor R3 corresponds to the second voltage Ve, and the voltage of the second end of the fifth resistor R5 corresponds to Ve+2Vcesat. Thus, by comparing the voltage at the second end of the first resistor R1 with the voltage at the second end of the third resistor R3, it can be determined whether the first voltage Vc and the second voltage Ve satisfy Ve>Vc; by comparing the voltage at the second end of the first resistor R1 with the voltage at the second end of the fifth resistor R5, it can be determined whether the first voltage Vc and the second voltage Ve satisfy Ve<Vc-2 Vcesat.

[0088] Figure 4 An intelligent power module control system 1000 provided in an embodiment of the present application includes the intelligent power module 100 and a load device 200 , wherein the load device 200 is connected to the emitter of the high-side IGBT 110 .

[0089] It should be noted here that the above-mentioned system provided in the embodiment of the present application is similar to the implementation method and principle of the above-mentioned intelligent power module 100 embodiment, and can achieve the same technical effect. The parts and beneficial effects of this embodiment that are the same as the structural embodiment will not be described in detail here.

[0090] Although example embodiments have been described herein with reference to the accompanying drawings, it should be understood that the above example embodiments are merely exemplary and are not intended to limit the scope of the present application to this. Those of ordinary skill in the art may make various changes and modifications therein without departing from the scope and spirit of the present application. All these changes and modifications are intended to be included within the scope of the present application as required by the appended claims.

[0091] Those of ordinary skill in the art will appreciate that the units and algorithm steps of each example described in conjunction with the embodiments disclosed herein can be implemented in electronic hardware, or a combination of computer software and electronic hardware. Whether these functions are performed in hardware or software depends on the specific application and design constraints of the technical solution. Professional and technical personnel can use different methods to implement the described functions for each specific application, but such implementation should not be considered to be beyond the scope of this application.

[0092] In the several embodiments provided in this application, it should be understood that the disclosed devices and methods can be implemented in other ways. For example, the device embodiments described above are only schematic, for example, the division of the units is only a logical function division, and there may be other division methods in actual implementation, such as multiple units or components can be combined or integrated into another device, or some features can be ignored or not executed.

[0093] In the description provided herein, a large number of specific details are described. However, it is understood that the embodiments of the present application can be practiced without these specific details. In some instances, well-known methods, structures and techniques are not shown in detail so as not to obscure the understanding of this description.

[0094] Similarly, it should be understood that in order to streamline the present application and help understand one or more of the various inventive aspects, in the description of the exemplary embodiments of the present application, the various features of the present application are sometimes grouped together into a single embodiment, figure, or description thereof. However, the method of the present application should not be interpreted as reflecting the following intention: the claimed application requires more features than the features clearly stated in each claim. More specifically, as reflected in the corresponding claims, the inventive point is that the corresponding technical problem can be solved with features less than all the features of a single disclosed embodiment. Therefore, the claims following the specific embodiment are hereby explicitly incorporated into the specific embodiment, wherein each claim itself serves as a separate embodiment of the present application.

[0095] It will be understood by those skilled in the art that, except for mutually exclusive features, all features disclosed in this specification (including the accompanying claims, abstracts and drawings) and all processes or units of any method or device disclosed in this specification may be combined in any combination. Unless otherwise expressly stated, each feature disclosed in this specification (including the accompanying claims, abstracts and drawings) may be replaced by an alternative feature that provides the same, equivalent or similar purpose.

[0096] In addition, those skilled in the art will appreciate that, although some embodiments described herein include certain features included in other embodiments but not other features, the combination of features of different embodiments is meant to be within the scope of the present application and form different embodiments. For example, in the claims, any one of the claimed embodiments can be used in any combination.

[0097] It should be noted that the above-mentioned embodiments illustrate rather than limit the invention and that those skilled in the art will be able to design alternative embodiments without departing from the scope of the appended claims.

Claims

1. An intelligent power module (100), characterized in that: include: A high-side IGBT (110), wherein a collector of the high-side IGBT (110) is connected to a power source (300), and an emitter of the high-side IGBT (110) is connected to a load device (200); A low-side IGBT (120), wherein the collector of the low-side IGBT (120) is connected to the emitter of the high-side IGBT (110), and the emitter of the low-side IGBT (120) is grounded; A low-side gate drive circuit (130), connected to the gate of the low-side IGBT (120), and used for turning on or off the low-side IGBT (120); A voltage acquisition control circuit (140) is connected to the collector of the high-side IGBT (110), the emitter of the high-side IGBT (110) and the low-side gate drive circuit (130), and is used to detect a first voltage of the collector of the high-side IGBT (110) and a second voltage of the emitter of the high-side IGBT (110), and when the first voltage and the second voltage meet a preset condition, send a first control signal to the low-side gate drive circuit (130) to control the low-side gate drive circuit (130) to turn on the low-side IGBT (120), and when the first voltage and the second voltage do not meet the preset condition, send a second control signal to the low-side gate drive circuit (130) to control the low-side gate drive circuit (130) to turn off the low-side IGBT (120); When the first voltage and the second voltage meet the preset condition, the high-side IGBT (110) is in a disconnected state.

2. The intelligent power module (100) according to claim 1, characterized in that: The preset conditions are: Ve>Vc; or, Ve<Vc-2Vcesat; Wherein, Ve is the second voltage, Vc is the first voltage, and Vcesat is the saturation voltage of the high-side IGBT (110).

3. The intelligent power module (100) according to claim 2, characterized in that: The voltage acquisition control circuit (140) comprises: A voltage sampling device (141), connected to the collector of the high-side IGBT (110) and the emitter of the high-side IGBT (110), and used for sampling the first voltage and the second voltage; A first voltage detection device (142), connected to the voltage sampling device (141), for detecting whether the first voltage and the second voltage satisfy Ve>Vc; A second voltage detection device (143), connected to the voltage sampling device (141), for detecting whether the first voltage and the second voltage satisfy Ve<Vc-2Vcesat; A control device (144) is connected to the first voltage detection device (142), the second voltage detection device (143) and the low-side gate drive circuit (130), and is used to send the first control signal or the second control signal to the low-side gate drive circuit (130) according to the detection results of the first voltage detection device (142) and the second voltage detection device (143).

4. The intelligent power module (100) according to claim 3, characterized in that: The voltage sampling device (141) comprises a first resistor R1, a second resistor R2, a third resistor R3, a fourth resistor R4, a fifth resistor R5 and a sixth resistor R6; A first end of the first resistor R1 is connected to the emitter of the high-side IGBT (110), a second end of the first resistor R1 is connected to a first end of the second resistor R2, and a second end of the second resistor R2 is grounded; A first end of the third resistor R3 is connected to the collector of the high-side IGBT (110), a second end of the third resistor R3 is connected to a first end of the fourth resistor R4, and a second end of the fourth resistor R4 is grounded; A first end of the fifth resistor R5 is connected to the collector of the high-side IGBT (110), a second end of the fifth resistor R5 is connected to a first end of the sixth resistor R6, and a second end of the sixth resistor R6 is grounded.

5. The intelligent power module (100) according to claim 3, characterized in that: The voltage sampling device (141) comprises a first resistor R1, a second resistor R2, a third resistor R3, a fourth resistor R4, a fifth resistor R5 and a sixth resistor R6; A first end of the first resistor R1 is connected to the collector of the high-side IGBT (110), a second end of the first resistor R1 is connected to a first end of the second resistor R2, and a second end of the second resistor R2 is grounded; A first end of the third resistor R3 is connected to the emitter of the high-side IGBT (110), a second end of the third resistor R3 is connected to the first end of the fourth resistor R4, and a second end of the fourth resistor R4 is grounded; A first end of the fifth resistor R5 is connected to the emitter of the high-side IGBT (110), a second end of the fifth resistor R5 is connected to a first end of the sixth resistor R6, and a second end of the sixth resistor R6 is grounded.

6. The intelligent power module (100) according to claim 4 or 5, characterized in that: The first voltage detection device (142) is a first comparator, the first input end of the first comparator is connected to the second end of the first resistor R1, the second input end of the first comparator is connected to the second end of the third resistor R3, and the output end of the first comparator is connected to the control device (144); The second voltage detection device (143) is a second comparator, a first input terminal of the second comparator is connected to the second end of the first resistor R1, a second input terminal of the second comparator is connected to the second end of the fifth resistor R5, and an output terminal of the second comparator is connected to the control device (144).

7. The intelligent power module (100) according to claim 6, characterized in that: The control device (144) is a NAND gate device, a first input end of the NAND gate device is connected to the output end of the first comparator, a second input end of the NAND gate device is connected to the output end of the second comparator, and an output end of the NAND gate device is connected to the low-side gate drive circuit.

8. The intelligent power module (100) according to claim 1, characterized in that: The low-side gate drive circuit (130) comprises: A drive signal receiving subcircuit (131), used for receiving a low-side IGBT drive signal, wherein the low-side IGBT drive signal is used for turning on or off the low-side IGBT (120); A level conversion device (132), connected to the drive signal receiving sub-circuit (131) and the voltage acquisition control circuit (140); A driving subcircuit (133) connected to the level conversion device (132) and the gate of the low-side IGBT (120); The level conversion device (132) is used to perform level conversion on the first control signal, and provide the converted level signal to the driving sub-circuit (133) to drive the driving sub-circuit (133) to turn on the low-side IGBT (120).

9. The intelligent power module (100) according to claim 8, characterized in that: The voltage acquisition control circuit (140) is connected to the drive signal receiving subcircuit (131) and is used to send the second control signal to the low-side gate drive circuit (130) to control the low-side gate drive circuit (130) to disconnect the low-side IGBT (120) when the low-side IGBT (120) drive signal is used to turn on the low-side IGBT (120) and the first voltage and the second voltage do not meet the preset condition.

10. An intelligent power module control system (1000), characterized in that: It comprises an intelligent power module (100) as claimed in any one of claims 1 to 9 and a load device (200), wherein the load device (200) is connected to the emitter of the high-side IGBT (110).

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