Epitaxial structure of semiconductor power device and radio frequency device

Abstract

The epitaxial structure of the semiconductor power device and the radio frequency device comprises a substrate, a channel layer and a barrier layer which are sequentially arranged from bottom to top, and a composite electron gas interface layer is arranged between the channel layer and the barrier layer. The composite electron gas interface layer has an electron affinity distribution characteristic, a hole mobility distribution characteristic, an electron mobility distribution characteristic, an electron effective mass distribution characteristic and a heavy hole effective mass distribution characteristic. By modulating the electron affinity steep degree, the hole mobility steep degree, the electron mobility steep degree, the electron effective mass steep degree and the heavy hole effective mass steep degree of the composite electron gas interface layer, the composite hole gas concentration of the channel layer and the barrier layer is improved; the gate leakage current, the off-state drain current and the switching current ratio are increased, and the high electron mobility transistor HEMT with high output current density and high breakdown voltage is realized.

Description

Technical Field

[0001] The present application relates to the field of semiconductor optoelectronic devices, and in particular to an epitaxial structure of a semiconductor power device and a radio frequency device. Background Art

[0002] Gallium nitride power devices and RF devices have many advantages, such as large bandgap, large critical breakdown electric field, small size, high frequency, high electron density, high electron saturation drift rate, high critical electric field, high thermal conductivity, high voltage resistance, and good chemical stability. For example, the bandgap of gallium nitride is 3.4eV, that of silicon is 1.12eV, and the electron drift rate of gallium nitride is 2.5 times that of Si. Gallium nitride power devices are based on a two-dimensional electron gas structure with high electron mobility. They use AlGaN / GaN lattice mismatch to generate stress. Under the interaction of spontaneous polarization and piezoelectric polarization, a large amount of two-dimensional electron gas is generated at the gallium nitride interface. Under undoped conditions, the density of the two-dimensional electron gas can exceed 1013cm-2, which can be applied to HEMT high electron mobility transistor devices or high-voltage power devices. They are widely used in power electronics, consumer electronics, data centers, industrial electromechanical, automotive electronics, smart grids, RF devices, 5G / 6G communications, photovoltaic inverters, new energy vehicles and other fields. GaN-HEMT power devices are divided into E-mode HEMT enhancement devices and D-mode depletion devices. Among them, E-mode HEMT enhancement devices have the advantages of high speed, high power, high electron mobility, and high breakdown voltage. They are mainly used in GaN RF, 5G / 6G small base station RF front end, wireless communication, lidar and other fields, while D-mode depletion devices have the advantages of low leakage current and simple driving circuit, and are mainly used in AC-DC conversion, DC-DC conversion and other fields.

[0003] GaN power devices and RF devices have the following problems: defects and lattice mismatch stress will produce leakage channels, causing performance failure and breakdown characteristics, leading to reliability failure; unbalanced carriers will vibrate the off-state electric field, resulting in electric field concentration; poor heat dissipation characteristics will affect reliability; Schottky gate depletion-type GaN high electron mobility devices often face problems such as high gate leakage and low switching current ratio, causing the gate breakdown voltage to drop, and then resulting in high power consumption, gate leakage and device failure. Summary of the invention

[0004] In order to solve one of the above technical problems, the present invention provides an epitaxial structure of a semiconductor power device and a radio frequency device.

[0005] The embodiment of the present invention provides an epitaxial structure of a semiconductor power device and a radio frequency device, comprising a substrate, a channel layer and a barrier layer arranged in sequence from bottom to top, a composite electron gas interface layer is arranged between the channel layer and the barrier layer, and the composite electron gas interface layer has electron affinity distribution characteristics, hole mobility distribution characteristics, electron mobility distribution characteristics, electron effective mass distribution characteristics and heavy hole effective mass distribution characteristics;

[0006] The rising angle of the valley position of the electron affinity of the composite electron gas interface layer toward the channel layer is The rising angle of the valley position of the hole mobility of the composite electron gas interface layer toward the channel layer is α, the rising angle of the valley position of the electron mobility of the composite electron gas interface layer toward the channel layer is ψ, the falling angle of the peak position of the electron effective mass of the composite electron gas interface layer toward the channel layer is μ, and the falling angle of the peak position of the heavy hole effective mass of the composite electron gas interface layer toward the channel layer is β, wherein,

[0007] Preferably, the composite electron gas interface layer also has density distribution characteristics, refractive index coefficient distribution characteristics, peak rate electric field distribution characteristics, lattice constant distribution characteristics and transverse sound velocity distribution characteristics;

[0008] The rising angle of the valley position of the density of the composite electron gas interface layer toward the channel layer is θ, the decreasing angle of the peak position of the refractive index coefficient of the composite electron gas interface layer toward the channel layer is υ, the decreasing angle of the peak position of the peak rate electric field of the composite electron gas interface layer toward the channel layer is γ, the decreasing angle of the peak position of the lattice constant of the composite electron gas interface layer toward the channel layer is ρ, and the decreasing angle of the peak position of the transverse sound velocity of the composite electron gas interface layer toward the channel layer is σ, wherein 5°≤ρ≤υ≤σ≤θ≤γ≤90°.

[0009] Preferably, the density, electron affinity, hole mobility, the rising angle of the valley position of the electron mobility toward the channel layer, the heavy hole effective mass, peak velocity electric field, transverse sound velocity, electron effective mass, refractive index coefficient, and the descending angle of the peak position of the lattice constant of the composite electron gas interface layer toward the channel layer have the following relationship:

[0010] Preferably, the electron affinity of the composite electron gas interface layer has the function y1=A+Be x +x curve distribution;

[0011] The hole mobility of the composite electron gas interface layer has the function y2=C+De x +x curve distribution;

[0012] The electron mobility of the composite electron gas interface layer has the function y3=E+lnx+Fe x Curve distribution;

[0013] The electron effective mass of the composite electron gas interface layer has the function y4=G+x 2 -He x Curve distribution;

[0014] The effective mass of heavy holes in the composite electron gas interface layer has the function y5=J+x 2 -Ke x Curve distribution;

[0015] Wherein, x is the depth of the composite electron gas interface layer toward the barrier layer, G≤J≤A≤C≤E.

[0016] Preferably, the density of the composite electron gas interface layer has a curve distribution of function y6=L+lnx+x;

[0017] The refractive index coefficient of the composite electron gas interface layer has the function y7=M+Na x Curve distribution, and 0<a<1;

[0018] The peak rate electric field of the composite electron gas interface layer has a fourth quadrant curve distribution of function y8=P+Qx / lnx;

[0019] The lattice constant of the composite electron gas interface layer has the function y9=R+Sb x Curve distribution, and 0<b<1;

[0020] The transverse acoustic velocity of the composite electron gas interface layer has a function y 10 =T+x 2 -Ue x Curve distribution;

[0021] Wherein, x is the depth of the composite electron gas interface layer toward the barrier layer, M≤L≤R≤T≤P.

[0022] Preferably, the composite electron gas layer includes any combination of zero-dimensional electron gas, one-dimensional electron gas, two-dimensional electron gas and three-dimensional electron gas, and the composite electron gas interface layer is any one or any combination of GaN, InGaN, InN, AlInN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond.

[0023] Preferably, a buffer layer and / or a first conductive type nitride semiconductor is disposed between the substrate and the channel layer; and a second conductive type nitride semiconductor and / or a nitride contact layer is disposed above the barrier layer.

[0024] Preferably, the buffer layer, the first conductive nitride semiconductor, the second conductive nitride semiconductor, and the nitride contact layer are any one or any combination of GaN, InGaN, InN, AlInN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, and BN; the thickness of the buffer layer is 5 angstroms to 60,000 angstroms, the thickness of the first conductive nitride semiconductor is 5 angstroms to 90,000 angstroms, the thickness of the second conductive nitride semiconductor is 10 angstroms to 40,000 angstroms, and the thickness of the nitride contact layer is 5 angstroms to 500 angstroms.

[0025] Preferably, the channel layer is any one or any combination of GaN, InGaN, InN, AlInN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond, and has a thickness of 5 angstroms to 50,000 angstroms.

[0026] Preferably, the barrier layer is any one or any combination of GaN, InGaN, InN, AlInN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond, and has a thickness of 5 angstroms to 50,000 angstroms.

[0027] Preferably, the substrate comprises sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, GaSb, Mo, Cu, TiW, W, diamond, InSb, InP, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiN x , any one of magnesium aluminum spinel MgAl2O4, MgO, ZnO, MgO, spinel, ZrB2, LiAlO2 and LiGaO2 composite substrates.

[0028] The beneficial effects of the present invention are as follows: The present invention sets a composite electron gas interface layer between the channel layer and the barrier layer of the epitaxial structure of the semiconductor power device and the radio frequency device, and sets it to have specific electron affinity distribution characteristics, hole mobility distribution characteristics, electron mobility distribution characteristics, electron effective mass distribution characteristics and heavy hole effective mass distribution characteristics. By modulating the steepness of the electron affinity, the steepness of the hole mobility, the steepness of the electron mobility, the steepness of the electron effective mass and the steepness of the heavy hole effective mass of the composite electron gas interface layer, the composite hole gas concentration (including any one or any combination of two-dimensional hole gas and three-dimensional hole gas) of the channel layer and the barrier layer is increased, the gate leakage current, the off-state drain current and the switching current ratio are increased, and a high electron mobility transistor HEMT with high output current density and high breakdown voltage is realized. BRIEF DESCRIPTION OF THE DRAWINGS

[0029] The drawings described herein are used to provide a further understanding of the present application and constitute a part of the present application. The illustrative embodiments of the present application and their descriptions are used to explain the present application and do not constitute an improper limitation on the present application. In the drawings:

[0030] Figure 1 A schematic diagram of the structure of the epitaxial structure of the semiconductor power device and the radio frequency device according to the embodiment of the present invention;

[0031] Figure 2 A schematic diagram of the structure of an epitaxial structure of another semiconductor power device and a radio frequency device according to an embodiment of the present invention;

[0032] Figure 3 A schematic diagram of the structure of an epitaxial structure of another semiconductor power device and a radio frequency device according to an embodiment of the present invention;

[0033] Figure 4 A schematic diagram of the structure of an epitaxial structure of another semiconductor power device and a radio frequency device according to an embodiment of the present invention;

[0034] Figure 5 A schematic diagram of the structure of an epitaxial structure of another semiconductor power device and a radio frequency device according to an embodiment of the present invention;

[0035] Figure 6 A schematic diagram of the structure of an epitaxial structure of another semiconductor power device and a radio frequency device according to an embodiment of the present invention;

[0036] Figure 7 A schematic diagram of the structure of an epitaxial structure of another semiconductor power device and a radio frequency device according to an embodiment of the present invention;

[0037] Figure 8 A schematic diagram of the structure of an epitaxial structure of another semiconductor power device and a radio frequency device according to an embodiment of the present invention;

[0038] Fig. 9 A schematic diagram of the structure of an epitaxial structure of another semiconductor power device and a radio frequency device according to an embodiment of the present invention;

[0039] Fig.10 It is a schematic structural diagram of an epitaxial structure of another semiconductor power device and a radio frequency device according to an embodiment of the present invention.

[0040] Reference numerals:

[0041] 100. substrate, 101. channel layer, 102. barrier layer, 103. composite electron gas interface layer, 104. buffer layer, 105. first conductive type nitride semiconductor, 106. second conductive type nitride semiconductor, 107. nitride contact layer. DETAILED DESCRIPTION

[0042] In order to make the technical solutions and advantages in the embodiments of the present application more clearly understood, the exemplary embodiments of the present application are further described in detail below in conjunction with the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present application, rather than an exhaustive list of all the embodiments. It should be noted that the embodiments in the present application and the features in the embodiments can be combined with each other without conflict.

[0043] like Figure 1As shown, this embodiment provides an epitaxial structure of a semiconductor power device and a radio frequency device, including a substrate 100, a channel layer 101 and a barrier layer 102 arranged in sequence from bottom to top. A composite electron gas interface layer 103 is arranged between the channel layer 101 and the barrier layer 102.

[0044] Specifically, in this embodiment, the epitaxial structure of the semiconductor power device and the radio frequency device is provided with a substrate 100, a channel layer 101 and a barrier layer 102 from bottom to top. The composite electron gas interface layer 103 is provided between the channel layer 101 and the barrier layer 102. The composite electron gas layer includes any combination of zero-dimensional electron gas, one-dimensional electron gas, two-dimensional electron gas and three-dimensional electron gas. The composite electron gas interface layer 103 is any one or any combination of GaN, InGaN, InN, AlInN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond.

[0045] In this embodiment, the composite electron gas interface layer 103 has electron affinity distribution characteristics, hole mobility distribution characteristics, electron mobility distribution characteristics, electron effective mass distribution characteristics and heavy hole effective mass distribution characteristics, and the electron affinity, hole mobility, electron mobility, electron effective mass and heavy hole effective mass in the composite electron gas interface layer 103 all show a certain change trend toward the channel layer 101, which is specifically manifested as follows:

[0046] The valley position of the electron affinity of the composite electron gas interface layer 103 shows an upward trend toward the channel layer 101 ;

[0047] The valley position of the hole mobility of the composite electron gas interface layer 103 shows an upward trend toward the channel layer 101 ;

[0048] The valley position of the electron mobility of the composite electron gas interface layer 103 shows an upward trend toward the channel layer 101 ;

[0049] The peak position of the electron effective mass of the composite electron gas interface layer 103 shows a downward trend toward the channel layer 101;

[0050] The peak position of the effective mass of heavy holes in the composite electron gas interface layer 103 shows a downward trend toward the channel layer 101 ;

[0051] Specifically, the rising angle of the valley position of the electron affinity of the composite electron gas interface layer 103 toward the channel layer 101 is The rising angle of the valley position of the hole mobility of the composite electron gas interface layer 103 toward the channel layer 101 is α, the rising angle of the valley position of the electron mobility of the composite electron gas interface layer 103 toward the channel layer 101 is ψ, the falling angle of the peak position of the electron effective mass of the composite electron gas interface layer 103 toward the channel layer 101 is μ, and the falling angle of the peak position of the heavy hole effective mass of the composite electron gas interface layer 103 toward the channel layer 101 is β, wherein,

[0052] In this embodiment, a composite electron gas interface layer 103 is provided between the channel layer 101 and the barrier layer 102 of the epitaxial structure of the semiconductor power device and the radio frequency device, and is set to have specific electron affinity distribution characteristics, hole mobility distribution characteristics, electron mobility distribution characteristics, electron effective mass distribution characteristics, and heavy hole effective mass distribution characteristics. By modulating the steepness of the electron affinity, the steepness of the hole mobility, the steepness of the electron mobility, the steepness of the electron effective mass, and the steepness of the heavy hole effective mass of the composite electron gas interface layer 103, the composite hole gas concentration (including any one or any combination of two-dimensional hole gas and three-dimensional hole gas) of the channel layer 101 and the barrier layer 102 is increased, the gate leakage current, the off-state drain current, and the switching current ratio are increased, and a high electron mobility transistor HEMT with high output current density and high breakdown voltage is realized.

[0053] In some optional embodiments, the composite electron gas interface layer 103 also has density distribution characteristics, refractive index coefficient distribution characteristics, peak rate electric field distribution characteristics, lattice constant distribution characteristics and transverse sound velocity distribution characteristics, and the density, refractive index coefficient, peak rate electric field, lattice constant and transverse sound velocity in the composite electron gas interface layer 103 all show a certain change trend toward the channel layer 101, which is specifically manifested as follows:

[0054] The valley position of the density of the composite electron gas interface layer 103 shows an upward trend toward the channel layer 101 ;

[0055] The peak position of the refractive index coefficient of the composite electron gas interface layer 103 shows a downward trend toward the channel layer 101;

[0056] The peak position of the peak rate electric field of the composite electron gas interface layer 103 shows a downward trend toward the channel layer 101;

[0057] The peak position of the lattice constant of the composite electron gas interface layer 103 shows a downward trend toward the channel layer 101 ;

[0058] The peak position of the transverse acoustic velocity of the composite electron gas interface layer 103 shows a decreasing trend toward the channel layer 101 ;

[0059] Specifically, the rising angle of the valley position of the density of the composite electron gas interface layer 103 toward the channel layer 101 is θ, the decreasing angle of the peak position of the refractive index coefficient of the composite electron gas interface layer 103 toward the channel layer 101 is υ, the decreasing angle of the peak position of the peak rate electric field of the composite electron gas interface layer 103 toward the channel layer 101 is γ, the decreasing angle of the peak position of the lattice constant of the composite electron gas interface layer 103 toward the channel layer 101 is ρ, and the decreasing angle of the peak position of the transverse sound velocity of the composite electron gas interface layer 103 toward the channel layer 101 is σ, wherein 5°≤ρ≤υ≤σ≤θ≤γ≤90°.

[0060] More specifically, the density, electron affinity, hole mobility, the rising angle of the valley position of the electron mobility of the composite electron gas interface layer 103 toward the channel layer 101, the heavy hole effective mass, peak velocity electric field, transverse sound velocity, electron effective mass, refractive index coefficient, and the descending angle of the peak position of the lattice constant of the composite electron gas interface layer 103 toward the channel layer 101 have the following relationship:

[0061] This embodiment reduces defects such as oxygen impurities and nitrogen vacancies, reduces channel electron scattering and interface state concentration, reduces leakage current and on-resistance, reduces parasitic capacitance and source resistance, suppresses parasitic effects in the structure to achieve high frequency, and improves switching speed and withstand voltage characteristics by regulating the density steepness, refractive index steepness, peak rate electric field steepness, lattice constant steepness and transverse sound velocity steepness of the composite electron gas interface layer 103. As a result, the threshold voltage is reduced from 0.5-1.0V to 0.05-0.2V, the saturation current is reduced from 2.0-3.0A / mm to 1.0-2.0A / mm, the switching current ratio is increased from 106-109 to 109-1015, the breakdown voltage is increased from 100-200V to 200-800V, the output power of the leakage voltage 28V test is increased from 3-5W / mm to 5-8W / mm, and the power density is increased from 1-2W / cm2 to 2-5W / cm2.

[0062] In some optional embodiments, the electron affinity distribution, hole mobility distribution, electron mobility distribution, electron effective mass distribution and heavy hole effective mass distribution of the composite electron gas interface layer 103 are as follows:

[0063] The electron affinity of the composite electron gas interface layer 103 has the function y1=A+Be x +x curve distribution;

[0064] The hole mobility of the composite electron gas interface layer 103 has the function y2=C+De x +x curve distribution;

[0065] The electron mobility of the composite electron gas interface layer 103 has the function y3=E+lnx+Fe x Curve distribution;

[0066] The electron effective mass of the composite electron gas interface layer 103 has the function y4=G+x 2 -He x Curve distribution;

[0067] The effective mass of heavy holes in the composite electron gas interface layer 103 has the function y5=J+x 2 -Ke x Curve distribution;

[0068] Wherein, x is the depth of the composite electron gas interface layer 103 toward the barrier layer 102 , and G≤J≤A≤C≤E.

[0069] In some optional embodiments, the composite electron gas interface layer 103 also has density distribution, refractive index coefficient distribution, peak rate electric field distribution, lattice constant distribution and transverse sound velocity distribution as shown below:

[0070] The density of the composite electron gas interface layer 103 has a curve distribution of function y6=L+lnx+x;

[0071] The refractive index coefficient of the composite electron gas interface layer 103 has the function y7=M+Na x Curve distribution, and 0<a<1;

[0072] The peak rate electric field of the composite electron gas interface layer 103 has a fourth quadrant curve distribution of function y8=P+Qx / lnx;

[0073] The lattice constant of the composite electron gas interface layer 103 has the function y9=R+Sb x Curve distribution, and 0<b<1;

[0074] The transverse acoustic velocity of the composite electron gas interface layer 103 has a function y 10 =T+x 2 -Ue x Curve distribution;

[0075] Wherein, x is the depth of the composite electron gas interface layer 103 toward the barrier layer 102 , and M≤L≤R≤T≤P.

[0076] In some optional embodiments, the channel layer 101 is any one or any combination of GaN, InGaN, InN, AlInN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond, and has a thickness of 5 angstroms to 50,000 angstroms.

[0077] In some optional embodiments, the barrier layer 102 is any one or any combination of GaN, InGaN, InN, AlInN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond, and has a thickness of 5 angstroms to 50,000 angstroms.

[0078] In some optional embodiments, the substrate 100 includes sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, GaSb, Mo, Cu, TiW, W, diamond, InSb, InP, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiN x , any one of magnesium aluminum spinel MgAl2O4, MgO, ZnO, MgO, spinel, ZrB2, LiAlO2 and LiGaO2 composite substrates.

[0079] In some optional embodiments, a buffer layer 104 and / or a first conductive type nitride semiconductor 105 is disposed between the substrate 100 and the channel layer 101, and a second conductive type nitride semiconductor 106 and / or a nitride contact layer 107 is disposed above the barrier layer 102, and the specific structural combination forms include the following cases:

[0080] In the first type, a buffer layer 104 is disposed between the substrate 100 and the channel layer 101, and a second conductive type nitride semiconductor 106 is disposed above the barrier layer 102, such as Figure 2 shown.

[0081] The second type is to provide a buffer layer 104 between the substrate 100 and the channel layer 101, and to provide a nitride contact layer 107 above the barrier layer 102. Figure 3 shown.

[0082] The third type is that a buffer layer 104 is disposed between the substrate 100 and the channel layer 101, a second conductive type nitride semiconductor 106 and a nitride contact layer 107 are disposed above the barrier layer 102, and the nitride contact layer 107 is located above the second conductive type nitride semiconductor 106, such as Figure 4 shown.

[0083] In the fourth method, a first conductive type nitride semiconductor 105 is disposed between the substrate 100 and the channel layer 101, and a second conductive type nitride semiconductor 106 is disposed above the barrier layer 102. Figure 5 shown.

[0084] The fifth type is that a first conductive type nitride semiconductor 105 is disposed between the substrate 100 and the channel layer 101, and a nitride contact layer 107 is disposed above the barrier layer 102, such as Figure 6 shown.

[0085] A sixth type is a first conductive type nitride semiconductor 105 disposed between the substrate 100 and the channel layer 101, a second conductive type nitride semiconductor 106 and a nitride contact layer 107 are disposed above the barrier layer 102, and the nitride contact layer 107 is located above the second conductive type nitride semiconductor 106, such as Figure 7 shown.

[0086] A seventh type is that a buffer layer 104 and a first conductive type nitride semiconductor 105 are disposed between the substrate 100 and the channel layer 101, and the first conductive type nitride semiconductor 105 is located above the buffer layer 104, and a second conductive type nitride semiconductor 106 is disposed above the barrier layer 102, such as Figure 8 shown.

[0087] An eighth type is that a buffer layer 104 and a first conductive type nitride semiconductor 105 are disposed between the substrate 100 and the channel layer 101, and the first conductive type nitride semiconductor 105 is located above the buffer layer 104, and a nitride contact layer 107 is disposed above the barrier layer 102, such as Fig. 9 shown.

[0088] Ninth, a buffer layer 104 and a first conductive nitride semiconductor 105 are provided between the substrate 100 and the channel layer 101, and the first conductive nitride semiconductor 105 is located above the buffer layer 104, and a second conductive nitride semiconductor 106 and a nitride contact layer 107 are provided above the barrier layer 102, and the nitride contact layer 107 is located above the second conductive nitride semiconductor 106, such as Fig.10 shown.

[0089] In some optional embodiments, the buffer layer 104, the first conductive nitride semiconductor 105, the second conductive nitride semiconductor 106, and the nitride contact layer 107 are GaN, InGaN, InN, AlInN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, Any one or any combination of InAs, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, the thickness of the buffer layer 104 is 5 angstroms to 60,000 angstroms, the thickness of the first conductive nitride semiconductor 105 is 5 angstroms to 90,000 angstroms, the thickness of the second conductive nitride semiconductor 106 is 10 angstroms to 40,000 angstroms, and the thickness of the nitride contact layer 107 is 5 angstroms to 500 angstroms.

[0090] Obviously, those skilled in the art can make various changes and modifications to the present application without departing from the spirit and scope of the present application. Thus, if these modifications and variations of the present application fall within the scope of the claims of the present application and their equivalents, the present application is also intended to include these modifications and variations.

Claims

1. An epitaxial structure of a semiconductor power device and a radio frequency device, comprising a substrate, a channel layer and a barrier layer arranged in sequence from bottom to top, characterized in that: A composite electron gas interface layer is provided between the channel layer and the barrier layer, and the composite electron gas interface layer has electron affinity distribution characteristics, hole mobility distribution characteristics, electron mobility distribution characteristics, electron effective mass distribution characteristics and heavy hole effective mass distribution characteristics; The rising angle of the valley position of the electron affinity of the composite electron gas interface layer toward the channel layer is The rising angle of the valley position of the hole mobility of the composite electron gas interface layer toward the channel layer is α, the rising angle of the valley position of the electron mobility of the composite electron gas interface layer toward the channel layer is ψ, the falling angle of the peak position of the electron effective mass of the composite electron gas interface layer toward the channel layer is μ, and the falling angle of the peak position of the heavy hole effective mass of the composite electron gas interface layer toward the channel layer is β, wherein, 2. The epitaxial structure of the semiconductor power device and the radio frequency device according to claim 1, characterized in that: The composite electron gas interface layer also has density distribution characteristics, refractive index coefficient distribution characteristics, peak rate electric field distribution characteristics, lattice constant distribution characteristics and transverse sound velocity distribution characteristics; The rising angle of the valley position of the density of the composite electron gas interface layer toward the channel layer is θ, the decreasing angle of the peak position of the refractive index coefficient of the composite electron gas interface layer toward the channel layer is υ, the decreasing angle of the peak position of the peak rate electric field of the composite electron gas interface layer toward the channel layer is γ, the decreasing angle of the peak position of the lattice constant of the composite electron gas interface layer toward the channel layer is ρ, and the decreasing angle of the peak position of the transverse sound velocity of the composite electron gas interface layer toward the channel layer is σ, wherein 5°≤ρ≤υ≤σ≤θ≤γ≤90°.

3. The epitaxial structure of the semiconductor power device and the radio frequency device according to claim 2, characterized in that: The density, electron affinity, hole mobility, the rising angle of the valley position of the electron mobility toward the channel layer, the heavy hole effective mass, peak velocity electric field, transverse sound velocity, electron effective mass, refractive index coefficient, and the descending angle of the peak position of the lattice constant of the composite electron gas interface layer toward the channel layer have the following relationship:

4. The epitaxial structure of a semiconductor power device and a radio frequency device according to claim 1, characterized in that: The electron affinity of the composite electron gas interface layer has the function y1=A+Be x +x curve distribution; The hole mobility of the composite electron gas interface layer has the function y2=C+De x +x curve distribution; The electron mobility of the composite electron gas interface layer has the function y3=E+lnx+Fe x Curve distribution; The electron effective mass of the composite electron gas interface layer has the function y4=G+x 2 -He x Curve distribution; The effective mass of heavy holes in the composite electron gas interface layer has the function y5=J+x 2 -Ke x Curve distribution; Wherein, x is the depth of the composite electron gas interface layer toward the barrier layer, G≤J≤A≤C≤E.

5. The epitaxial structure of the semiconductor power device and the radio frequency device according to claim 2, characterized in that: The density of the composite electron gas interface layer has a function y6=L+lnx+x curve distribution; The refractive index coefficient of the composite electron gas interface layer has the function y7=M+Na x Curve distribution, and 0<a<1; The peak rate electric field of the composite electron gas interface layer has a fourth quadrant curve distribution of function y8=P+Qx / lnx; The lattice constant of the composite electron gas interface layer has the function y9=R+Sb x Curve distribution, and 0<b<1; The transverse acoustic velocity of the composite electron gas interface layer has a function y 10 =T+x 2 -Ue x Curve distribution; Wherein, x is the depth of the composite electron gas interface layer toward the barrier layer, M≤L≤R≤T≤P.

6. The epitaxial structure of a semiconductor power device and a radio frequency device according to claim 1, characterized in that: The composite electron gas layer includes any combination of zero-dimensional electron gas, one-dimensional electron gas, two-dimensional electron gas and three-dimensional electron gas, and the composite electron gas interface layer is any one or any combination of GaN, InGaN, InN, AlInN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond.

7. The epitaxial structure of a semiconductor power device and a radio frequency device according to claim 1, characterized in that: A buffer layer and / or a first conductive type nitride semiconductor is arranged between the substrate and the channel layer; a second conductive type nitride semiconductor and / or a nitride contact layer is arranged above the barrier layer.

8. The epitaxial structure of a semiconductor power device and a radio frequency device according to claim 1, characterized in that: The buffer layer, the first conductive nitride semiconductor, the second conductive nitride semiconductor, and the nitride contact layer are any one or any combination of GaN, InGaN, InN, AlInN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, and BN; the thickness of the buffer layer is 5 angstroms to 60,000 angstroms, the thickness of the first conductive nitride semiconductor is 5 angstroms to 90,000 angstroms, the thickness of the second conductive nitride semiconductor is 10 angstroms to 40,000 angstroms, and the thickness of the nitride contact layer is 5 angstroms to 500 angstroms.

9. The epitaxial structure of a semiconductor power device and a radio frequency device according to claim 1, characterized in that: The channel layer is any one or any combination of GaN, InGaN, InN, AlInN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond, and has a thickness of 5 angstroms to 50,000 angstroms; The barrier layer is any one or any combination of GaN, InGaN, InN, AlInN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond, and has a thickness of 5 angstroms to 50,000 angstroms.

10. The epitaxial structure of a semiconductor power device and a radio frequency device according to claim 1, characterized in that: The substrate includes sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, GaSb, Mo, Cu, TiW, W, diamond, InSb, InP, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiN x , any one of magnesium aluminum spinel MgAl2O4, MgO, ZnO, MgO, spinel, ZrB2, LiAlO2 and LiGaO2 composite substrates.

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