Display panel, manufacturing method thereof and display device

Abstract

The invention provides a display panel, a manufacturing method thereof and a display device. The display panel includes: a first region including a first plurality of sub-pixels; comprising a second plurality of sub-pixels; at least one light transmitting portion disposed between adjacent pixel groups of the second plurality of sub-pixels in the second region, a first sub-pixel of the first plurality of sub-pixels including: a first light emitting layer; a first thin film transistor including a first channel region; a first capacitor electrode disposed below and overlapping a first channel region of the first thin film transistor, a second sub-pixel of the second plurality of sub-pixels including: a second light emitting layer; a second thin film transistor including a second channel region; and a second capacitor electrode disposed under and overlapping a second channel region of the second thin film transistor, the first capacitor electrode in the first sub-pixel in the first region being disposed in a different layer than the second capacitor electrode in the second sub-pixel in the second region.

Description

[0001] This application is a divisional application of the Chinese patent application with application number 202111123486.4, filing date September 24, 2021, and invention name “Display panel, manufacturing method thereof, and display device”.

[0002] CROSS-REFERENCE TO RELATED APPLICATIONS

[0003] This application claims the benefit of priority from Korean Patent Application No. 10-2020-0176852 filed in the Korean Intellectual Property Office on December 16, 2020, the disclosure of which is incorporated herein by reference in its entirety. Technical Field

[0004] The present disclosure relates to a display panel including an imaging area provided with pixels for reproducing an image and a method of manufacturing the display panel. Background Art

[0005] Electroluminescent display devices are generally divided into inorganic light-emitting display devices and organic light-emitting display devices according to the materials contained in the light-emitting layer. Active matrix organic light-emitting display devices may include organic light-emitting diodes (hereinafter referred to as "OLEDs") having self-luminous properties. OLEDs may be provided on each pixel included in the organic light-emitting display device. Organic light-emitting display devices have the advantages of short response time, high luminous efficiency, excellent brightness, wide viewing angle, etc. Organic light-emitting display devices have high contrast ratios and excellent color gamuts because such display devices can represent black within the grayscale range as completely black.

[0006] The multimedia capabilities of mobile terminals have been significantly improved. For example, by default, smartphones have built-in cameras, and the resolution of such cameras has been improved to the level of conventional digital cameras. However, one or more cameras usually located on the upper part of the smartphone limit the design of the associated display screen, making it difficult to design the screen. In order to reduce the corresponding space occupied by the camera, screen designs including notches or perforations have been adopted in smartphones, but the screen size is still limited due to the camera, so a full-screen display needs to be implemented. Summary of the invention

[0007] In order to realize full-screen display, a scheme of allocating an imaging area is proposed, in which low-resolution pixels are set in the screen of the display panel, and a camera is arranged in a position or area opposite to the imaging area below the display panel. The imaging area in the screen is used as a transparent display screen for displaying images. In such an imaging area, due to the pixels, the corresponding transmittance is reduced and the resulting brightness is low. In addition, in order to improve the transmittance, the manufacturing cost may be increased by adding a process mask for a process for etching metal, etc.

[0008] Therefore, it is desirable to address such issues and / or problems.

[0009] Embodiments described herein provide a display panel capable of improving light transmittance of an imaging area in a display screen, and a method for simplifying a process of manufacturing the display panel.

[0010] The problems or needs to be solved in the present disclosure are not limited thereto, and other problems or needs will become apparent to those skilled in the art from the following description.

[0011] According to one aspect of the present disclosure, a display panel is provided, the display panel comprising: a first area provided with pixels; a second area, in which pixels having a lower pixel per inch (PPI) than the first area are provided and a plurality of light-transmitting portions are provided. The light-transmitting portions include circular or elliptical light-transmitting portions arranged in a zigzag pattern along a second direction intersecting the first direction in the second area. Each pixel group in the second area includes a second electrode, and the second electrode is removed from the light-transmitting area to expose the light-transmitting portions.

[0012] According to one aspect of the present disclosure, a display panel is provided, the display panel comprising: a first area provided with a plurality of pixels, a second area provided with a plurality of pixel groups, and at least one light-transmitting portion provided between the plurality of pixel groups in the second area. Each of the at least one light-transmitting portion may be a circular light-transmitting portion arranged in a zigzag pattern along a first direction and a second direction intersecting the first direction in the second area or include a circular light-transmitting portion. Each of the plurality of pixel groups in the second area may include a second electrode. At least a portion of the second electrode may be removed from the light-transmitting area of ​​the second area to form the light-transmitting portion.

[0013] According to one aspect of the present disclosure, a display panel is provided, the display panel comprising: a first area including a first plurality of sub-pixels; a second area including a second plurality of sub-pixels; and at least one light-transmitting portion, the at least one light-transmitting portion being arranged between adjacent pixel groups in the second plurality of sub-pixels in the second area, wherein a first sub-pixel in the first plurality of sub-pixels in the first area comprises: a first light-emitting layer; a first thin-film transistor including a first channel region; and a first capacitor electrode, the first capacitor electrode being arranged below the first channel region of the first thin-film transistor and overlapping with the first channel region, wherein a second sub-pixel in the second plurality of sub-pixels in the second area comprises: a second light-emitting layer; a second thin-film transistor including a second channel region; and a second capacitor electrode, the second capacitor electrode being arranged below the second channel region of the second thin-film transistor and overlapping with the second channel region, and wherein the first capacitor electrode in the first sub-pixel in the first area is arranged in a layer different from the second capacitor electrode in the second sub-pixel in the second area.

[0014] According to one aspect of the present disclosure, a display panel is provided, comprising: a first region comprising a first plurality of sub-pixels; a second region comprising a second plurality of sub-pixels; and at least one light-transmitting portion, wherein the at least one light-transmitting portion is disposed between adjacent pixel groups of the second plurality of sub-pixels in the second region, wherein at least one sub-pixel of the second plurality of sub-pixels comprises: a first electrode; a second electrode; a light-emitting layer disposed between the first electrode and the second electrode; a thin film transistor electrically connected to the first electrode, the thin film transistor comprising a channel region; and a capacitor comprising a first conductive layer and a second conductive layer, wherein a portion of the first conductive layer is disposed below the channel region of the thin film transistor and overlaps with the channel region.

[0015] According to one aspect of the present disclosure, a display panel is provided, comprising: a first region including a first plurality of sub-pixels; a second region including a second plurality of sub-pixels; and at least one light-transmitting portion, wherein the at least one light-transmitting portion is arranged between adjacent pixel groups in the second plurality of sub-pixels in the second region, wherein at least one sub-pixel in the first plurality of sub-pixels or the second plurality of sub-pixels comprises: a first electrode; a second electrode; a light-emitting layer arranged between the first electrode and the second electrode; a thin film transistor electrically connected to the first electrode, the thin film transistor comprising a channel region; and a capacitor comprising a first conductive layer and a second conductive layer, and wherein a portion of the first conductive layer is arranged below the channel region of the thin film transistor and overlaps with the channel region.

[0016] According to another aspect of the present disclosure, a display device including the above-mentioned display panel is provided.

[0017] According to another aspect of the present disclosure, a method for manufacturing a display panel is provided. A method for manufacturing a display panel having a display area and an imaging area is provided, wherein the display area includes a first pixel area provided with a plurality of pixels, the imaging area includes a second pixel area provided with a plurality of pixel groups and at least one light-transmitting portion provided between the plurality of pixel groups, the method including forming a capacitor electrode in the pixel area of ​​the imaging area, and using the capacitor electrode as a mask, removing at least a portion of the second electrode of the imaging area by irradiating a laser beam to form the light-transmitting portion.

[0018] According to another aspect of the present disclosure, a display panel is provided, including a first region provided with a plurality of pixels, a second region provided with a plurality of pixel groups, and at least one light-transmitting portion provided between the plurality of pixel groups in the second region.

[0019] Each of the at least one light-transmitting portion may be located in a region where at least a portion of the second electrode included in the plurality of pixel groups disposed in the second region is removed. Each of the at least one light-transmitting portion may be located in at least a portion of a region other than a region where the capacitor electrode included in the plurality of pixel groups disposed in the second region is located.

[0020] The second electrode disposed in the second region may be removed in a region other than a region where the capacitor electrode disposed in the second region is located. The second electrode disposed in the second region may be located in a region overlapping with the capacitor electrode disposed in the second region.

[0021] According to aspects of the present disclosure, when a laser beam is used to remove a metal layer to be removed in an imaging area to form a light-transmitting portion, the associated display panel can be manufactured with a simplified process and reduced manufacturing cost because the light-transmitting portion can be patterned by using a lower metal layer without an additional etching mask.

[0022] According to aspects of the present disclosure, by completely removing a metal layer that needs to be removed to form a light-transmitting portion without a residual film, the light transmittance of the imaging area can be increased, and the margin between the display area and the imaging area can be minimized.

[0023] According to aspects of the present disclosure, by completely removing a metal layer that needs to be removed to form a light-transmitting portion without a residual film, the light transmittance of an imaging area can be increased and noise of captured image data can be reduced.

[0024] Effects produced by the embodiments described herein are not limited thereto, and other effects will become apparent to those skilled in the art from the following description. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] Figure 1 A display area and an imaging area in a screen of a display panel according to aspects of the present disclosure are schematically illustrated.

[0026] Figure 2 The arrangement of pixels in the first area (display area DA) in the display panel according to aspects of the present disclosure is schematically shown.

[0027] Figure 3 The arrangement of the pixel group and at least one light transmitting portion in the second area (imaging area CA) in the display panel according to aspects of the present disclosure is schematically illustrated.

[0028] Figure 4 The cross-sectional structure of a pixel in the first area DA of the display panel according to aspects of the present disclosure is specifically shown.

[0029] Figures 5 to 7 is a cross-sectional view illustrating a pixel including a light-transmitting portion of a second area CA in a display panel in various embodiments according to aspects of the present disclosure. DETAILED DESCRIPTION

[0030] By referring to the embodiments of the present disclosure described in detail below in conjunction with the accompanying drawings, the advantages and features of the present disclosure and the methods for realizing the advantages and features of the present disclosure will be apparent. However, the present disclosure is not limited to the embodiments set forth below, but can be implemented in various different forms. The following embodiments are only provided to fully disclose the present disclosure and inform those skilled in the art of the scope of the present disclosure, and the present disclosure is limited only by the scope of the appended claims.

[0031] In addition, the shapes, sizes, ratios, angles, numbers, etc. shown in the accompanying drawings for describing the exemplary embodiments of the present disclosure are only examples, and the present disclosure is not limited thereto. Throughout the specification, similar reference numerals generally represent similar elements. In addition, in the following description of the present disclosure, when it is determined that a detailed description of known functions and configurations incorporated herein may make the subject matter in some embodiments of the present disclosure quite unclear, the detailed description will be omitted.

[0032] Terms such as "including," "having," "comprising," "consisting of," and "composed of" used herein are generally intended to allow for the addition of other components unless the term is used with the term "only." Singular forms used herein are intended to include plural forms unless the context clearly indicates otherwise.

[0033] When explaining any element or feature of the embodiments of the present disclosure, it should be considered that any dimensions and relative sizes of layers, regions, and areas include tolerances or error ranges even when not specifically described.

[0034] Spatially relative terms such as "on", "over", "above", "below", "below", "under", "below", "down", "up", "near", "close", "adjacent", etc. may be used to describe the relationship of one element or feature to another element or feature as shown in the figures, and should be interpreted that one or more elements may also "intervene" between these elements unless terms such as "directly" or "only" are used.

[0035] According to the embodiments of the present disclosure, when terms such as "first", "second", etc. are used to describe various elements or components, it should be considered that the corresponding elements or components are not limited to the meanings of these terms. That is, these terms are only used to distinguish an element or component from one or more other elements or components. Therefore, within the technical concept of the present disclosure, the first element mentioned below may be the second element.

[0036] Throughout this specification, similar reference numbers generally refer to similar elements.

[0037] As can be fully understood by those of ordinary skill in the art, the elements or features of the various exemplary embodiments of the present disclosure may be partially or wholly combined or combined with each other, and may be technically interlocked and operated in various ways, and the various exemplary embodiments may be performed independently of each other or in association with each other.

[0038] Hereinafter, various embodiments of the present disclosure will be described in detail with reference to the accompanying drawings.

[0039] Reference Figure 1 , the screen of the display panel 900 includes at least a first area DA (also referred to as a display area) and a second area CA (also referred to as an imaging area).

[0040] The display area DA and the imaging area CA include a pixel array in which pixels having pixel data written therein are arranged. To ensure the transmittance of the imaging area CA, the number of pixels per unit area, i.e., pixels per inch (PPI), of the imaging area CA may be lower than that of the display area DA.

[0041] The pixel array of the display area DA may include a pixel region (i.e., a first pixel region) provided with a plurality of pixels having a relatively high PPI. The pixel array of the imaging area CA may be separated by at least one light-transmitting portion and include a pixel region (i.e., a second pixel region) provided with a plurality of pixel groups having a relatively low PPI. In the imaging area CA, external light may pass through the display panel 900 through at least one light-transmitting portion having a high light transmittance, and may be received by a camera module or an image capture module under the display panel 900.

[0042] Since the display area DA and the imaging area CA include pixels, an input image may be reproduced in the display area DA and the imaging area CA.

[0043] Each pixel in the display area DA and the imaging area CA includes sub-pixels with different colors to realize an image with color. Each sub-pixel may be one of a red sub-pixel (hereinafter referred to as an "R sub-pixel"), a green sub-pixel (hereinafter referred to as a "G sub-pixel"), and a blue sub-pixel (hereinafter referred to as a "B sub-pixel"). Although not shown, each pixel P may also include a white sub-pixel (hereinafter referred to as a "W sub-pixel"). Each sub-pixel may include a pixel circuit and a light-emitting element, such as a light-emitting diode, more specifically, an organic light-emitting diode (OLED).

[0044] The imaging area CA may include pixels and a camera module or an image capture module (hereinafter referred to as an "image capture module") disposed below the screen of the display panel 900. In display mode, the input image may be displayed in the imaging area CA where the image capture module including the lens is located by writing pixel data of the input image into the pixels of the imaging area CA. In image capture mode, the image capture module may capture an external static or dynamic image and output static or dynamic image data. The lens of the image capture module may face the imaging area CA. When external light enters the imaging area CA and reaches the lens of the image capture module, the lens may then condense the incident light onto the image sensor ( Figure 1 In the image capture mode, the image capture module captures an external static or dynamic image and outputs the static or dynamic image data.

[0045] To ensure light transmittance, an image quality compensation algorithm may be applied to compensate for the brightness and color coordinates of the pixels in the imaging area CA due to the pixels removed from the imaging area CA.

[0046] According to the embodiments described herein, since pixels configured with a low resolution are arranged in the imaging area CA, the display area of ​​the screen may not be limited by the image capture module, and thus full-screen display may be achieved.

[0047] Despite Figure 1 Although not shown in the figure, as described in detail later, the display panel 900 included in the display device according to the embodiment of the present disclosure may include a circuit layer disposed above the substrate and a light-emitting element layer disposed above the circuit layer. A polarizing plate may be disposed above the light-emitting element layer, and a cover glass may be disposed on or above the polarizing plate.

[0048] The circuit layer may include pixel circuits connected to wirings such as data lines, gate lines, and power lines, and gate drivers connected to the gate lines, etc. The circuit layer may include circuit elements, such as transistors such as thin film transistors (TFTs), at least one capacitor, etc. The wirings and circuit elements of the circuit layer may be implemented or arranged in a plurality of insulating layers, two or more metal layers separated by insulating layers therebetween, and an active layer comprising a semiconductor material, or may be implemented or arranged using a plurality of insulating layers, two or more metal layers separated by insulating layers therebetween, and an active layer comprising a semiconductor material.

[0049] The light-emitting element layer may include a light-emitting element driven by a pixel circuit. The light-emitting element may be implemented as an organic light-emitting diode (OLED). The OLED includes an organic compound layer located between an anode and a cathode. The organic compound layer may include a hole injection layer (HIL), a hole transport layer (HTL), a light-emitting layer (EML), an electron transport layer (ETL), an electron injection layer (EIL), etc.; however, the embodiments of the present disclosure are not limited thereto. When a voltage is applied to the anode and cathode of the OLED, holes through the hole transport layer HTL and electrons through the electron transport layer ETL may move to the light-emitting layer EML and then form excitons. Thus, visible light may be emitted from the light-emitting layer EML. The light-emitting element layer may be disposed on or above pixels that selectively transmit red light, green light, and blue light of corresponding wavelengths, and may also include a color filter array.

[0050] The light emitting element layer may be covered by a passivation layer, and the passivation layer may be covered by an encapsulation layer. The passivation layer and the encapsulation layer may have a multilayer structure in which one or more organic films and one or more inorganic films are alternately stacked. The inorganic film may block the penetration of moisture or oxygen. The organic film may make the surface of the inorganic film flat. In a multilayer structure stacked by one or more organic films and one or more inorganic films, the path through which moisture or oxygen travels may become longer compared to a structure having a single layer, and therefore, the penetration of moisture / oxygen affecting the light emitting element layer may be effectively prevented or reduced.

[0051] The polarizing plate may be attached to the encapsulation layer. The polarizing plate leads to an improvement in the visibility of the display device outdoors. The polarizing plate may reduce light reflected from the surface of the display panel 900 and block light reflected from the metal of the circuit layer, thereby improving the brightness of the pixel.

[0052] Figure 2 An example of pixels arranged in the first area DA is shown.

[0053] Figure 3 An example of a pixel group and a light-transmitting portion disposed in the second area CA is shown. Figure 2 and Figure 3 , the wiring connected to the pixels is omitted.

[0054] Reference Figure 2 , the first area DA includes pixels arranged with a high PPI. Each pixel may include R, G and B sub-pixels, or may include two sub-pixels of different colors. Each pixel may also include a W sub-pixel omitted in the drawing.

[0055] The luminous efficiency of each light emitting element included in the sub-pixel may be different based on the color. In view of this, the size of the sub-pixel may be different based on the color. For example, the B sub-pixel among the R, G, and B sub-pixels may be the largest, while the G sub-pixel may be the smallest.

[0056] The pixels may be arranged along a first direction (X-axis direction), a second direction (Y-axis direction) perpendicular to the first direction, and an inclined angle direction between the first direction and the second direction (a direction defined by the θX axis and the θY axis). Here, the direction defined by the θX axis and the θY axis indicates an inclined direction in which the X axis and the Y axis are rotated 45°, respectively.

[0057] Reference Figure 3 , the pixels included in the second area CA may be organized into a plurality of pixel groups PG, each pixel group PG including one or two pixels. The pixel groups PG may be spaced apart from each other by a predetermined distance. Each light-transmitting portion AG may be disposed in the space between the pixel groups PG. External light may be incident on the lens of the image capture module through the light-transmitting portion AG. The light-transmitting portion AG may include a transparent medium having a high light transmittance without including metal, so that light may be incident with minimal light loss. In other words, the light-transmitting portion AG may be formed of a transparent insulating material without including metal wires or pixels. The light transmittance of the imaging area CA increases as the number or size of the light-transmitting portions AG increases. Therefore, since the light-transmitting portion AG is disposed between the pixel groups PG, the PPI of the second area CA becomes lower than the PPI of the first area DA.

[0058] Each pixel group PG may include one or two pixels, or may include three or four sub-pixels (R, G, and / or B sub-pixels). In addition, each pixel group PG may further include one or more W sub-pixels.

[0059] like Figure 3As shown, each pixel group PG disposed in the second area CA may include four sub-pixels. Each pixel group PG may include two pixels PIX1 and PIX2. The first pixel PIX1 may include R and G sub-pixels, and the second pixel PIX2 may include B and G sub-pixels; however, the embodiments of the present disclosure are not limited thereto. Using a sub-pixel rendering algorithm, insufficient color representation generated in each of the first pixel PIX1 and the second pixel PIX2 may be compensated by the average value of the corresponding color data between adjacent pixels. White may be represented by combining the R, G, and B sub-pixels of the first pixel PIX1 and the second pixel PIX2.

[0060] The light-transmitting portion AG may have various shapes. In one embodiment, the light-transmitting portion AG may have a circular or elliptical shape or the like, so as to obtain a captured image with minimized halo phenomenon and increased transmittance. In this case, the pixel group PG may be designed to have a diamond or square shape to magnify the light-transmitting portion AG having a circular or elliptical shape or the like. The light-transmitting portion AG may be defined as an area in the screen where all metal layers are removed.

[0061] One or all or some of the metal electrode materials in the light-transmitting portion AG may be removed. In the method of manufacturing a display panel, a metal used as a cathode electrode may be uniformly deposited over the entire screen, and then only a portion of the deposited material corresponding to the light-transmitting portion AG of the imaging area CA may be removed in a laser process.

[0062] As described above, each pixel group PG includes a circuit layer and a light-emitting element layer in which each pixel circuit of a sub-pixel is provided. At least a portion of the circuit layer may overlap or be spatially separated from at least a portion of the light-emitting element layer. The circuit layer of the pixel group PG may be arranged in a rhombus or square shape.

[0063] Figure 4 The cross-sectional structure of a sub-pixel in the first area DA of a display panel according to aspects of the present disclosure is specifically shown.

[0064] Reference Figure 4 , sub-pixels defined by gate lines and data lines are disposed above substrate 100. A light emitting element 500 may be located in each sub-pixel. Each light emitting element 500 may emit light representing a specific color. For example, each light emitting element 500 may include a first electrode 510, a light emitting layer 520, and a second electrode 530 stacked in sequence.

[0065] The first electrode 510 may include a conductive material. The first electrode 510 may include a metal having a relatively high reflectivity. The first electrode 510 may have a multilayer structure. For example, the first electrode 510 may have a structure in which a reflective electrode formed of a metal such as aluminum (Al), silver (Ag), etc. is located between transparent electrodes formed of a transparent conductive material such as ITO, IZO, etc.

[0066] The light emitting layer 520 may generate light having a brightness level corresponding to the voltage difference between the first electrode 510 and the second electrode 530. For example, the light emitting layer 520 may include a light emitting material layer EML including a light emitting material. The light emitting material may include an organic material, an inorganic material, or a mixed material. For example, the display device according to aspects of the present disclosure may be an organic light emitting display device including a light emitting layer 520 formed of an organic material.

[0067] In order to improve the light-emitting efficiency, the light-emitting layer 520 may have a multilayer structure. For example, the light-emitting layer 520 may also include at least one first organic layer located between the first electrode 510 and the light-emitting material layer, and at least one second organic layer located between the light-emitting material layer and the second electrode 530. The first organic layer may include at least one of a hole injection layer HIL and a hole transport layer HTL. The second organic layer may include at least one of an electron transport layer ETL and an electron injection layer EIL. However, the embodiments of the present disclosure are not limited thereto. For example, the first organic layer may include at least one of an electron transport layer ETL and an electron injection layer EIL, and the second organic layer may include at least one of a hole injection layer HIL and a hole transport layer HTL.

[0068] The second electrode 530 may include a conductive material. The second electrode 530 may include a material different from the first electrode 510. For example, the second electrode 530 may be a transparent electrode formed of a transparent conductive material such as ITO, IZO, etc. Therefore, in the display device according to the embodiment described herein, the light generated by the light emitting layer 520 of each pixel may be transmitted to the outside through the second electrode 530.

[0069] In order to prevent moisture from penetrating into the light emitting element 500, the encapsulation part 170 may be provided to cover the light emitting element 500. For example, the encapsulation part 170 for preventing moisture from penetrating may be provided on the second electrode 530 of the light emitting element 500.

[0070] The encapsulation part 170 may include at least one inorganic encapsulation layer and at least one organic encapsulation layer. For example, the encapsulation part 170 may include a first encapsulation layer 171 including an inorganic material, a second encapsulation layer 172 including an organic material, and a third encapsulation layer 173 including an inorganic material. The first encapsulation layer 171 of the encapsulation part 170 may be disposed on the second electrode 530. The second encapsulation layer 172 may be disposed on the first encapsulation layer 171. The third encapsulation layer 173 may be disposed on the second encapsulation layer 172. The first encapsulation layer 171 and the third encapsulation layer 173 of the encapsulation part 170 may be formed of an inorganic material such as silicon nitride (SiNx), silicon oxide (SiOx), etc. The second encapsulation layer 172 of the encapsulation part 170 may be formed of an organic material such as acrylic resin, epoxy resin, phenolic resin, polyamide resin, polyimide resin, etc.

[0071] A driving current corresponding to a gate signal provided through a corresponding gate line and a data signal provided through a corresponding data line may be provided to each light emitting element 500. For example, a driving circuit electrically connected to the light emitting element 500 may be located in each pixel. The driving circuit may control the operation of the light emitting element 500 according to the gate signal and the data signal. For example, the driving circuit may include a first thin film transistor 200, a second thin film transistor 300, and a storage capacitor 400.

[0072] The first thin film transistor 200 may include a first semiconductor pattern 210 , a first gate insulating film 220 , a first gate electrode 230 , a first interlayer insulating film 240 , a first source electrode 250 , and a first drain electrode 260 .

[0073] The first semiconductor pattern 210 may be located near the substrate 100. The first semiconductor pattern 210 may include a semiconductor material. For example, the first semiconductor pattern 210 may include polysilicon (Poly-Si), which is a polycrystalline semiconductor material. In some embodiments, the first semiconductor pattern 210 may include low temperature polysilicon (LTPS).

[0074] The first semiconductor pattern 210 may include a first source region, a first drain region, and a first channel region. The first channel region may be located between the first source region and the first drain region. The first channel region may have a relatively low conductivity than the first source region and the first drain region. For example, the first source region and the first drain region may have a higher conductivity type impurity content than the first channel region.

[0075] The first gate insulating film 220 may be disposed on the first semiconductor pattern 210. The first gate insulating film 220 may extend beyond both side outer edges of the first semiconductor pattern 210. The first gate insulating film 220 may include an insulating material. For example, the first gate insulating film 220 may include a silicon oxide-based (SiOx) material. The silicon oxide-based (SiOx) material may include silicon dioxide (SiO2).

[0076] The first gate electrode 230 may be located on the first gate insulating film 220. For example, the first gate electrode 230 may overlap with the first channel region of the first semiconductor pattern 210. Since the first gate insulating film 220 is located between the first gate electrode 230 and the first semiconductor pattern 210, the first gate electrode 230 may be insulated from the first semiconductor pattern 210. The first gate electrode 230 may include a conductive material. For example, the first gate electrode 230 may include a metal such as aluminum (Al), chromium (Cr), copper (Cu), titanium (Ti), molybdenum (Mo), tungsten (W), etc.

[0077] The first interlayer insulating film 240 may be disposed on or over the first gate insulating film 220 and the first gate electrode 230. The first interlayer insulating film 240 may extend along the first gate insulating film 220. The first interlayer insulating film 240 may include an insulating material. The first interlayer insulating film 240 may include a material different from that of the first gate insulating film 220. For example, the first interlayer insulating film 240 may include a silicon nitride-based material (SiNx).

[0078] The first source electrode 250 may be electrically connected to the first source region of the first semiconductor pattern 210. The first interlayer insulating film 240 may include a first source contact hole exposing a portion of the first source region of the first semiconductor pattern 210. A portion of the first source electrode 250 may overlap the first source region of the first semiconductor pattern 210.

[0079] The first source electrode 250 may include a conductive material. For example, the first source electrode 250 may include a metal such as aluminum (Al), chromium (Cr), molybdenum (Mo), tungsten (W), titanium (Ti), copper (Cu), or the like.

[0080] The first drain electrode 260 may be electrically connected to the first drain region of the first semiconductor pattern 210. The first interlayer insulating film 240 may include a first drain contact hole exposing a portion of the first drain region of the first semiconductor pattern 210. A portion of the first drain electrode 260 may overlap the first drain region of the first semiconductor pattern 210.

[0081] The first drain electrode 260 may include a conductive material. For example, the first drain electrode 260 may include a metal such as aluminum (Al), chromium (Cr), molybdenum (Mo), tungsten (W), titanium (Ti), copper (Cu), etc. The first drain electrode 260 may include the same material as the first source electrode 250. For example, the first drain electrode 260 may be formed by the same process as the first source electrode 250.

[0082] The first source electrode 250 and the first drain electrode 260 may have a multilayer structure. For example, the first source electrode 250 and the first drain electrode 260 may be composed of three layers. When the first source electrode 250 and the first drain electrode 260 are composed of three layers, the top layer and the bottom layer may be a titanium (Ti) metal layer, and the middle layer between the top layer and the bottom layer may be an aluminum (Al) metal layer.

[0083] The second thin film transistor 300 may be formed by a process different from that of the first thin film transistor 200. For example, the second thin film transistor 300 may be located on the second separation insulating film 130 of the first thin film transistor 200. The second separation insulating film 130 may include an insulating material. The second separation insulating film 130 may include a material different from that of the first interlayer insulating film 240. For example, the second separation insulating film 130 may include a silicon oxide-based (SiOx) material.

[0084] The second thin film transistor 300 may have the same structure as the first thin film transistor 200. For example, the second thin film transistor 300 may include a second semiconductor pattern 310, a second gate insulating film 320, a second gate electrode 330, a second interlayer insulating film 340, a second source electrode 350, and a second drain electrode 360.

[0085] The second semiconductor pattern 310 may be located close to the second separation insulating film 130. For example, the second semiconductor pattern 310 may directly contact the second separation insulating film 130. The second semiconductor pattern 310 may include a semiconductor material. The second semiconductor pattern 310 may include a material different from the first semiconductor pattern 210. For example, the second semiconductor pattern 310 may include an oxide semiconductor such as IGZO.

[0086] The second semiconductor pattern 310 may include a second source region, a second drain region, and a second channel region. The second channel region may be located between the second source region and the second drain region. The resistance of the second source region and the resistance of the second drain region may be lower than the resistance of the second channel region. For example, the second source region and the second drain region may be regions modified to be used as a conductive material. The second channel region may be a region that is not modified to be used as a conductive material. For example, a doping process may be performed to enable the second source region and the second drain region to be used as a conductive material.

[0087] The second gate insulating film 320 may be located on the second semiconductor pattern 310. The second gate insulating film 320 may include an insulating material. For example, the second gate insulating film 320 may include a silicon oxide-based (SiOx) material, a silicon nitride-based (SiNx) material, and / or a material having a high dielectric constant (high-k) material. The second gate insulating film 320 may have a multilayer structure.

[0088] The second gate electrode 330 may be located on the second gate insulating film 320. For example, the second gate electrode 330 may overlap the second channel region of the second semiconductor pattern 310. For example, the second gate insulating film 320 may include a second source contact hole and a second drain contact hole that expose at least a portion of the second source region and at least a portion of the second drain region of the second semiconductor pattern 310, respectively.

[0089] The second gate electrode 330 may include a conductive material. For example, the second gate electrode 330 may include a metal such as aluminum (Al), chromium (Cr), copper (Cu), titanium (Ti), molybdenum (Mo), tungsten (W), etc. The second gate electrode 330 may include the same material as the first gate electrode 230.

[0090] The second interlayer insulating film 340 may be disposed on or over the second semiconductor pattern 310 and the second gate electrode 330. The second interlayer insulating film 340 may include an insulating material. The second interlayer insulating film 340 may include a material different from the first interlayer insulating film 240. For example, the second interlayer insulating film 340 may include a silicon oxide-based material (SiOx).

[0091] The second source electrode 350 may be located on the second interlayer insulating film 340. The second source electrode 350 may be electrically connected to the second source region of the second semiconductor pattern 310. For example, the second interlayer insulating film 340 may include a second source contact hole exposing at least a portion of the second source region of the second semiconductor pattern 310. A portion of the second source electrode 350 may overlap the second source region of the second semiconductor pattern 310.

[0092] The second source electrode 350 may include a conductive material. For example, the second source electrode 350 may include a metal such as aluminum (Al), chromium (Cr), molybdenum (Mo), tungsten (W), titanium (Ti), copper (Cu), etc. The second source electrode 350 may include the same material as the first source electrode 250.

[0093] The second drain electrode 360 ​​may be located on the second interlayer insulating film 340. The second drain electrode 360 ​​may be electrically connected to the second drain region of the second semiconductor pattern 310. For example, the second interlayer insulating film 340 may include a second drain contact hole exposing at least a portion of the second drain region of the second semiconductor pattern 310. A portion of the second drain electrode 360 ​​may overlap the second drain region of the second semiconductor pattern 310.

[0094] The second drain electrode 360 ​​may include a conductive material. For example, the second drain electrode 360 ​​may include a metal such as aluminum (Al), chromium (Cr), molybdenum (Mo), tungsten (W), titanium (Ti), copper (Cu), etc. The second drain electrode 360 ​​may include the same material as the second source electrode 350. For example, the second drain electrode 360 ​​may be formed by the same process as the second source electrode 350.

[0095] The second source electrode 350 and the second drain electrode 360 ​​may have a multilayer structure. For example, the second source electrode 350 and the second drain electrode 360 ​​may be composed of three layers. When the second source electrode 350 and the second drain electrode 360 ​​are composed of three layers, the top layer and the bottom layer may be a titanium (Ti) metal layer, and the middle layer between the top layer and the bottom layer may be an aluminum (Al) metal layer.

[0096] The first source electrode 250 and the first drain electrode 260 , the second source electrode 350 and the second drain electrode 360 ​​are located on the second interlayer insulating film 340 , and may be formed in the same process and formed of the same material.

[0097] The storage capacitor 400 may be formed between the substrate 100 and the second thin film transistor 300. For example, the storage capacitor 400 may include a first storage electrode 410 disposed on the same layer as the first gate electrode 230 and a second storage electrode 420 disposed above the first storage electrode 410.

[0098] The first storage electrode 410 may include a conductive material. The first storage electrode 410 may include a metal such as aluminum (Al), chromium (Cr), molybdenum (Mo), tungsten (W), titanium (Ti), copper (Cu), etc. The first storage electrode 410 may include the same material as the first gate electrode 230. For example, the first storage electrode 410 may be formed by the same process as the first gate electrode 230.

[0099] The second storage electrode 420 may include a conductive material. The second storage electrode 420 may include a metal such as aluminum (Al), chromium (Cr), molybdenum (Mo), tungsten (W), titanium (Ti), copper (Cu), etc. The first interlayer insulating film 240 may extend to extend between the first storage electrode 410 and the second storage electrode 420. The second storage electrode 420 may be located on the first interlayer insulating film 240.

[0100] The first source electrode 250 and the first drain electrode 260 may be located on a different layer from the first storage electrode 420. For example, the first separation insulating film 120 covering the second storage electrode 420 may extend between the first interlayer insulating film 240 and the first source electrode 250 and between the first interlayer insulating film 240 and the first drain electrode 260.

[0101] The first interlayer insulating film 240 and the first separation insulating film 120 may be sequentially stacked between the first gate electrode 230 and the first source electrode 250 and between the first gate electrode 230 and the first drain electrode 260. The second storage electrode 420 may include a different material from the first source electrode 250 and the first drain electrode 260.

[0102] The first separation insulating film 120 may include an insulating material. For example, the first separation insulating film 120 may include a silicon oxide-based material (SiOx) and / or a silicon nitride-based material (SiNx). The first separation insulating film 120 may have a multilayer structure. The first source electrode 250 and the first drain electrode 260 may be located on the second interlayer insulating film 340. However, the embodiments of the present disclosure are not limited thereto.

[0103] The first storage electrode 410 may be electrically connected to the second drain electrode 360 ​​of the second thin film transistor 300. For example, a first intermediate electrode 610 may be provided, which is connected to the first storage electrode 410 by passing through the first interlayer insulating film 240, the first separation insulating film 120, the second separation insulating film 130, the second gate insulating film 320, and the second interlayer insulating film 340. In this case, the second drain electrode 360 ​​may be connected to the first intermediate electrode 610. The first intermediate electrode 610 may include a conductive material. For example, the first intermediate electrode 610 may include a metal such as aluminum (Al), chromium (Cr), molybdenum (Mo), tungsten (W), titanium (Ti), copper (Cu), etc. The first intermediate electrode 610 may include the same material as the first source electrode 250, the first drain electrode 260, the second source electrode 350, and the second drain electrode 360. For example, the first intermediate electrode 610 may be formed by the same process as the first source electrode 250, the first drain electrode 260, the second source electrode 350, and the second drain electrode 360.

[0104] The buffer insulating film 110 may be located between the substrate 100 and the driving circuit (e.g., at least one thin film transistor and at least one storage capacitor) of each sub-pixel. The buffer insulating film 110 may prevent contamination by the substrate 100 during the process of forming the driving circuit. For example, the buffer insulating film 110 may extend between the substrate 100 and the first semiconductor pattern 210 of each sub-pixel. The buffer insulating film 110 may include an insulating material. For example, the buffer insulating film 110 may include a silicon oxide-based (SiOx) material and / or a silicon nitride-based (SiNx) material. The buffer insulating film 110 may have a multilayer structure. For example, the buffer insulating film 110 may have a stacked structure including a first buffer insulating film 111 and a second buffer insulating film 112, and the second buffer insulating film 112 includes a material different from that of the first buffer insulating film 111.

[0105] The first planarization layer 140 and the second planarization layer 150 may be sequentially stacked between the second thin film transistor 300 and the light emitting element 500 of each sub-pixel. The first planarization layer 140 and the second planarization layer 150 may eliminate the step difference caused by the driving circuit of each pixel. For example, the surface of the second planarization layer 150 facing the light emitting element 500 of each sub-pixel may be a flat surface. The first planarization layer 140 and the second planarization layer 150 may include an insulating material. The first planarization layer 140 and the second planarization layer 150 may include a material different from the second interlayer insulating film 340. For example, the first planarization layer 140 and the second planarization layer 150 may include an organic insulating material. The second planarization layer 150 may include a material different from the first planarization layer 140.

[0106] The light emitting element 500 of each sub-pixel may be electrically connected to the first thin film transistor 200 of the corresponding pixel, and the first electrode 510 may be electrically connected to the first drain electrode 260 through the first connection electrode 620. For example, the first connection electrode 620 may be located between the first planarization layer 140 and the second planarization layer 150. The first connection electrode 620 may be connected to the first drain electrode 260 by passing through the first planarization layer 140, and the first electrode 510 may be connected to the first connection electrode 620 by passing through the second planarization layer 150.

[0107] The first connection electrode 620 may include a conductive material. For example, the first connection electrode 620 may include a metal such as aluminum (Al), chromium (Cr), molybdenum (Mo), tungsten (W), titanium (Ti), copper (Cu), or the like.

[0108] The light emitting element 500 of each sub-pixel may be driven independently. For example, the first electrode 510 of each sub-pixel may be insulated from the first electrode 510 of an adjacent sub-pixel. The edge of each first electrode 510 may be covered by a bank / spacer insulating film 160 including a bank insulating film 161 and a spacer insulating film 162. The bank / spacer insulating film 160 may be located on the second planarization layer 150. The light emitting layer 520 and the second electrode 530 of each pixel may be disposed on the corresponding first electrode 510 exposed by the bank / spacer insulating film 160. The bank / spacer insulating film 160 may include an insulating material. For example, the bank / spacer insulating film 160 may include an organic insulating material. The bank / spacer insulating film 160 may include a material different from that of the second planarization layer 150.

[0109] At least a portion of the light emitting layer 520 of each sub-pixel may extend to extend along the bank / spacer insulating film 160. For example, the first organic layer and the second organic layer of each sub-pixel may be connected to the first organic layer and the second organic layer of the adjacent sub-pixel, respectively. The light emitting material layer EML of each sub-pixel may be spaced apart from the light emitting material layer EML of the adjacent sub-pixel. The second electrode 530 of each pixel may extend to extend along the bank / spacer insulating film 160. For example, the second electrode 530 of each sub-pixel may be connected to the second electrode 530 of the adjacent pixel.

[0110] According to the embodiments described herein, the first thin film transistor 200 may be used as a driving transistor. Therefore, the first electrode 510 of the light emitting element 500 may be connected to the first thin film transistor 200; however, the embodiments of the present disclosure are not limited thereto. For example, the first electrode 510 of the light emitting element 500 may be connected to the second thin film transistor 300. The second thin film transistor 300 may be used as a driving transistor.

[0111] Figure 5 The cross-sectional structure of the sub-pixel in the second area CA of the display panel according to aspects of the present disclosure is specifically shown.

[0112] Reference Figure 5 The process of disposing the second thin film transistor 300, the light emitting element 500, the encapsulation part 170, the bank / spacer insulating film 160, etc. included in the second area CA of the display panel 900 according to aspects of the present disclosure may be substantially equal to that of disposing Figure 4 The process of the components of the first area DA is shown.

[0113] The substrate 100 of the second area CA may include sub-pixels defined by gate lines and data lines. A light-emitting element 500 may be located in each sub-pixel. Each light-emitting element 500 may emit light representing a specific color. For example, each light-emitting element 500 may include a first electrode 510, a light-emitting layer 520, and a second electrode 530A stacked in sequence.

[0114] The first electrode 510 may include a conductive material. The first electrode 510 may include a metal having a relatively high reflectivity. The first electrode 510 may have a multilayer structure. For example, the first electrode 510 may have a structure in which a reflective electrode formed of a metal such as aluminum (Al), silver (Ag), etc. is located between transparent electrodes formed of a transparent conductive material such as ITO, IZO, etc.

[0115] The light emitting layer 520 may generate light having a brightness level corresponding to the voltage difference between the first electrode 510 and the second electrode 530A. For example, the light emitting layer 520 may include a light emitting material layer EML including a light emitting material. The light emitting material may include an organic material, an inorganic material, or a mixed material. For example, the display device according to aspects of the present disclosure may be an organic light emitting display device including a light emitting layer 520 formed of an organic material.

[0116] To improve light emitting efficiency, the light emitting layer 520 may have a multi-layer structure. For example, the light emitting layer 520 may further include at least one first organic layer between the first electrode 510 and the light emitting material layer, and at least one second organic layer between the light emitting material layer and the second electrode 530A.

[0117] The first organic layer may include at least one of a hole injection layer HIL and a hole transport layer HTL.

[0118] The second organic layer may include at least one of an electron transport layer ETL and an electron injection layer EIL. However, the embodiments of the present disclosure are not limited thereto. For example, the first organic layer may include at least one of an electron transport layer ETL and an electron injection layer EIL, and the second organic layer may include at least one of a hole injection layer HIL and a hole transport layer HTL.

[0119] The second electrode 530A may include a conductive material. The second electrode 530A may include a material different from the first electrode 510. For example, the second electrode 530A may be a transparent electrode formed of a transparent conductive material such as ITO, IZO, etc. Therefore, in the display device according to the embodiment described herein, the light generated by the light emitting layer 520 of each pixel may be transmitted to the outside through the second electrode 530A.

[0120] In order to prevent moisture from penetrating into the light emitting element 500, the encapsulation part 170 may be provided to cover the light emitting element 500. For example, the encapsulation part 170 for preventing moisture from penetrating may be provided on the second electrode 530A of the light emitting element 500.

[0121] The encapsulation unit 170 may include at least one inorganic encapsulation layer and at least one organic encapsulation layer. For example, the encapsulation unit 170 may include a first encapsulation layer 171 including an inorganic material, a second encapsulation layer 172 including an organic material, and a third encapsulation layer 173 including an inorganic material. The first encapsulation layer 171 of the encapsulation unit 170 may be disposed on the second electrode 530A. The second encapsulation layer 172 may be disposed on the first encapsulation layer 171. The third encapsulation layer 173 may be disposed on the second encapsulation layer 172. The first encapsulation layer 171 and the third encapsulation layer 173 of the encapsulation unit 170 may be formed of an inorganic material such as silicon nitride (SiNx), silicon oxide (SiOx), etc. The second encapsulation layer 172 of the encapsulation unit 170 may be formed of an organic material such as an acrylic resin, an epoxy resin, a phenolic resin, a polyamide resin, a polyimide resin, etc.

[0122] A driving current corresponding to a gate signal provided through a corresponding gate line and a data signal provided through a corresponding data line may be provided to each light emitting element 500. For example, a driving circuit electrically connected to the light emitting element 500 may be located in each pixel. The driving circuit may control the operation of the light emitting element 500 according to the gate signal and the data signal. For example, the driving circuit may include a second thin film transistor 300 and a storage capacitor 710.

[0123] The second thin film transistor 300 may be formed by a different process from the first thin film transistor 200 of the first area DA. For example, the second thin film transistor 300 may be located on the second separation insulating film 130 of the first thin film transistor 200. The second separation insulating film 130 may include an insulating material. The second separation insulating film 130 may include a material different from the first interlayer insulating film 240. For example, the second separation insulating film 130 may include a silicon oxide-based (SiOx) material.

[0124] For example, the structure of the second thin film transistor 300 may include a second semiconductor pattern 310 , a second gate insulating film 320 , a second gate electrode 330 , a second interlayer insulating film 340 , a second source electrode 350 , and a second drain electrode 360 ​​.

[0125] The second semiconductor pattern 310 may be located close to the second separation insulating film 130. For example, the second semiconductor pattern 310 may directly contact the second separation insulating film 130. The second semiconductor pattern 310 may include a semiconductor material. For example, the second semiconductor pattern 310 may include an oxide semiconductor such as IGZO.

[0126] The second semiconductor pattern 310 may include a second source region, a second drain region, and a second channel region. The second channel region may be located between the second source region and the second drain region. The resistance of the second source region and the resistance of the second drain region may be lower than the resistance of the second channel region. For example, the second source region and the second drain region may be regions modified to be used as a conductive material. The second channel region may be a region that is not modified to be used as a conductive material. For example, a doping process may be performed to enable the second source region and the second drain region to be used as a conductive material.

[0127] The second gate insulating film 320 may be located on the second semiconductor pattern 310. The second gate insulating film 320 may include an insulating material. For example, the second gate insulating film 320 may include a silicon oxide-based (SiOx) material, a silicon nitride-based (SiNx) material, and / or a material having a high dielectric constant (high-k) material. The second gate insulating film 320 may have a multilayer structure.

[0128] The second gate electrode 330 may be located on the second gate insulating film 320. For example, the second gate electrode 330 may overlap the second channel region of the second semiconductor pattern 310. For example, the second gate insulating film 320 may include a second source contact hole and a second drain contact hole that expose at least a portion of the second source region and at least a portion of the second drain region of the second semiconductor pattern 310, respectively.

[0129] The second gate electrode 330 may include a conductive material. For example, the second gate electrode 330 may include a metal such as aluminum (Al), chromium (Cr), copper (Cu), titanium (Ti), molybdenum (Mo), tungsten (W), or the like.

[0130] The second interlayer insulating film 340 may be disposed on or over the second semiconductor pattern 310 and the second gate electrode 330. The second interlayer insulating film 340 may include an insulating material. The second interlayer insulating film 340 may include a material different from the first interlayer insulating film 240. For example, the second interlayer insulating film 340 may include a silicon oxide-based material (SiOx).

[0131] The second source electrode 350 may be located on the second interlayer insulating film 340. The second source electrode 350 may be electrically connected to the second source region of the second semiconductor pattern 310. For example, the second interlayer insulating film 340 may include a second source contact hole exposing at least a portion of the second source region of the second semiconductor pattern 310. A portion of the second source electrode 350 may overlap the second source region of the second semiconductor pattern 310.

[0132] The second source electrode 350 may include a conductive material. For example, the second source electrode 350 may include a metal such as aluminum (Al), chromium (Cr), molybdenum (Mo), tungsten (W), titanium (Ti), copper (Cu), etc. The second source electrode 350 may include the same material as the first source electrode 250.

[0133] The second drain electrode 360 ​​may be located on the second interlayer insulating film 340. The second drain electrode 360 ​​may be electrically connected to the second drain region of the second semiconductor pattern 310. For example, the second interlayer insulating film 340 may include a second drain contact hole exposing at least a portion of the second drain region of the second semiconductor pattern 310. A portion of the second drain electrode 360 ​​may overlap the second drain region of the second semiconductor pattern 310.

[0134] The second drain electrode 360 ​​may include a conductive material. For example, the second drain electrode 360 ​​may include a metal such as aluminum (Al), chromium (Cr), molybdenum (Mo), tungsten (W), titanium (Ti), copper (Cu), etc. The second drain electrode 360 ​​may include the same material as the second source electrode 350. For example, the second drain electrode 360 ​​may be formed by the same process as the second source electrode 350.

[0135] The second source electrode 350 and the second drain electrode 360 ​​may have a multilayer structure. For example, the second source electrode 350 and the second drain electrode 360 ​​may be composed of three layers. When the second source electrode 350 and the second drain electrode 360 ​​are composed of three layers, the top layer and the bottom layer may be a titanium (Ti) metal layer, and the middle layer between the top layer and the bottom layer may be an aluminum (Al) metal layer.

[0136] The storage capacitor 710 may be formed between the substrate 100 and the second thin film transistor 300. For example, the storage capacitor 710 may include a first storage electrode 711 disposed on the same layer as the first gate electrode 230 disposed in the first area DA, and a second storage electrode 712 disposed in the same layer as the second storage electrode 420 disposed in the first area DA and located on the first storage electrode 711.

[0137] The second electrode 530A disposed in the second region is located in a region overlapping with the first storage electrode 711 disposed in the second region.

[0138] The first thin film transistor 300 disposed in the first region is disposed in a layer different from a layer in which the thin film transistor 300 disposed in the second region is disposed.

[0139] The first storage electrode 711 may include a conductive material. The first storage electrode 711 may include a metal such as aluminum (Al), chromium (Cr), molybdenum (Mo), tungsten (W), titanium (Ti), copper (Cu), etc. The first storage electrode 711 may include the same material as the first gate electrode 230 of the first area DA. For example, the first storage electrode 711 may be formed by the same process as the first gate electrode 230 of the first area DA.

[0140] The second storage electrode 712 may include a conductive material. The second storage electrode 712 may include a metal such as aluminum (Al), chromium (Cr), molybdenum (Mo), tungsten (W), titanium (Ti), copper (Cu), etc. The first interlayer insulating film 240 may extend to extend between the first storage electrode 711 and the second storage electrode 712. The second storage electrode 712 may be located on the first interlayer insulating film 240.

[0141] The first separation insulating film 120 may include an insulating material. For example, the first separation insulating film 120 may include a silicon oxide-based material (SiOx) and / or a silicon nitride-based material (SiNx). The first separation insulating film 120 may have a multi-layer structure.

[0142] The first storage electrode 711 may be electrically connected to the second drain electrode 360 ​​of the second thin film transistor 300. For example, a first intermediate electrode 610 may be provided, and the first intermediate electrode 610 is connected to the first storage electrode 711 by passing through the first interlayer insulating film 240, the first separation insulating film 120, the second separation insulating film 130, the second gate insulating film 320, and the second interlayer insulating film 340. In this case, the second drain electrode 360 ​​may be connected to the first intermediate electrode 610. The first intermediate electrode 610 may include a conductive material. For example, the first intermediate electrode 610 may include a metal such as aluminum (Al), chromium (Cr), molybdenum (Mo), tungsten (W), titanium (Ti), copper (Cu), etc. The second source electrode 350 may include the same material as the second drain electrode 360. For example, the first intermediate electrode 610 may be formed by the same process as the second source electrode 350 and the second drain electrode 360.

[0143] The buffer insulating film 110 may be located between the substrate 100 and the driving circuit (e.g., at least one thin film transistor and at least one storage capacitor) of each sub-pixel. The buffer insulating film 110 may prevent contamination by the substrate 100 during the process of forming the driving circuit. For example, the buffer insulating film 110 may include a silicon oxide-based (SiOx) material and / or a silicon nitride-based (SiNx) material. The buffer insulating film 110 may have a multilayer structure. For example, the buffer insulating film 110 may have a stacked structure including a first buffer insulating film 111 and a second buffer insulating film 112, the second buffer insulating film 112 including a material different from that of the first buffer insulating film 111.

[0144] The first planarization layer 140 and the second planarization layer 150 may be sequentially stacked between the second thin film transistor 300 and the light emitting element 500 of each sub-pixel. The first planarization layer 140 and the second planarization layer 150 may eliminate the step difference caused by the driving circuit of each pixel. For example, the surface of the second planarization layer 150 facing the light emitting element 500 of each sub-pixel may be a flat surface. The first planarization layer 140 and the second planarization layer 150 may include an insulating material. The first planarization layer 140 and the second planarization layer 150 may include a material different from the second interlayer insulating film 340. For example, the first planarization layer 140 and the second planarization layer 150 may include an organic insulating material. The second planarization layer 150 may include a material different from the first planarization layer 140.

[0145] The light emitting element 500 of each sub-pixel may be electrically connected to the second thin film transistor 300 of the corresponding pixel, and the first electrode 510 may be electrically connected to the second drain electrode 360 ​​through the first connection electrode 620. For example, the first connection electrode 620 may be located between the first planarization layer 140 and the second planarization layer 150. The first connection electrode 620 may be connected to the second drain electrode 360 ​​by passing through the first planarization layer 140, and the first electrode 510 may be connected to the first connection electrode 620 by passing through the second planarization layer 150.

[0146] The first connection electrode 620 may include a conductive material. For example, the first connection electrode 620 may include a metal such as aluminum (Al), chromium (Cr), molybdenum (Mo), tungsten (W), titanium (Ti), copper (Cu), or the like.

[0147] The light emitting element 500 of each sub-pixel may be driven independently. For example, the first electrode 510 of each sub-pixel may be insulated from the first electrode 510 of an adjacent sub-pixel. The edge of each first electrode 510 may be covered by a bank / spacer insulating film 160 including a bank insulating film 161 and a spacer insulating film 162. The bank / spacer insulating film 160 may be located on the second planarization layer 150. The light emitting layer 520 and the second electrode 530A of each pixel may be disposed on the corresponding first electrode 510 exposed by the bank / spacer insulating film 160. The bank / spacer insulating film 160 may include an insulating material. For example, the bank / spacer insulating film 160 may include an organic insulating material. The bank / spacer insulating film 160 may include a material different from the second planarization layer 150.

[0148] At least a portion of the light emitting layer 520 of each sub-pixel may extend to extend along the bank / spacer insulating film 160. For example, the first organic layer and the second organic layer of each sub-pixel may be connected to the first organic layer and the second organic layer of the adjacent sub-pixel, respectively. The light emitting material layer EML of each sub-pixel may be spaced apart from the light emitting material layer EML of the adjacent sub-pixel.

[0149] The portion of the second electrode 530A of each pixel corresponding to the light-transmitting portion AG of the second area CA may be removed by a laser patterning process. In the laser patterning process of the second electrode 530A, the second electrode 530A may be removed by using the first storage electrode 711 as a mask. For example, due to the presence of the second electrode 530A, a portion of the first storage electrode 711 is protected from the laser beam irradiated to the display panel 900, and thus the portion of the second electrode 530A cannot be removed from the laser beam, and due to the absence of the second electrode 530A, a portion of the first storage electrode 711 is exposed to the laser beam, and thus the portion of the second electrode 530A may be removed to form the light-transmitting portion AG.

[0150] The light-transmitting portion AG may include a portion not extending onto the bank / spacer insulating film 160 because the second electrode 530A corresponding to the light-transmitting portion AG is removed. For example, the second electrode 530A of each subpixel may include a portion not connected to the second electrode 530A of an adjacent pixel.

[0151] Figure 6 and Figure 7 The second area CA included in the display panel 900 in other embodiments according to aspects of the present disclosure is shown. Figure 6 and Figure 7 The first thin film transistor 200, the second thin film transistor 300, the storage capacitor 400, and the light emitting element included in the first area DA included in each display panel may be substantially equal to Figure 4 In addition, Figure 6and Figure 7 The second thin film transistor 300, the light emitting element 500, the encapsulation portion 170, and the bank / spacer insulating film 160 included in the second area CA included in each display panel may be substantially equal to Figure 5 Those shown.

[0152] Reference Figure 6 The storage capacitor 720 includes a first storage electrode 721, a second storage electrode 722, and a third storage electrode 723. The first storage electrode 721 and the second storage electrode 723 may be substantially equal to Figure 5 The first storage electrode 711 and the second storage electrode 712 are provided. Figure 6 The third storage electrode 723 may be located on the second separation insulating film 130 and formed of an oxide semiconductor modified to be used as a conductive material. For example, the third storage electrode 723 may include an oxide semiconductor such as IGZO and may be modified to be used as a conductive material through a doping process.

[0153] Reference Figure 7 The storage capacitor 730 includes a first storage electrode 731 and a second storage electrode 732. The first storage electrode 731 may be substantially equal to Figure 5 The second storage electrode 712 may be substantially equal to Figure 6 The third storage electrode 723 is formed. Figure 7 The second storage electrode 732 may be located on the second separation insulating film 130 and formed of an oxide semiconductor modified to serve as a conductive material. For example, the second storage electrode 732 may include an oxide semiconductor such as IGZO and may be modified to serve as a conductive material through a doping process.

[0154] Reference Figure 7 , a portion of the second electrode 530B corresponding to the light-transmitting portion AG of the second area CA may be removed by a laser patterning process. In the laser patterning process of the second electrode 530B, the second electrode 530B may be removed by using the first storage electrode 731 as a mask. For example, due to the presence of the second electrode 530B, a portion of the first storage electrode 731 is protected from the laser beam irradiated to the display panel 900, and thus the portion of the second electrode 530B cannot be removed from the laser beam, and due to the absence of the second electrode 530B, a portion of the first storage electrode 731 is exposed to the laser beam, and thus the portion of the second electrode 530B may be removed to form the light-transmitting portion AG.

[0155] The light-transmitting portion AG may include a portion not extending onto the bank / spacer insulating film 160 because the second electrode 530B corresponding to the light-transmitting portion AG is removed. For example, the second electrode 530B of each subpixel may include a portion not connected to the second electrode 530B of an adjacent pixel.

[0156] The present disclosure also provides a display device including the display panel 900 .

[0157] It should be noted that the present disclosure also includes the following technical solutions:

[0158] Solution 1. A display panel, comprising:

[0159] A first area having a plurality of pixels is provided;

[0160] A second region having a plurality of pixel groups disposed therein; and

[0161] at least one light-transmitting portion, each light-transmitting portion being arranged between the plurality of pixel groups in the second region,

[0162] Wherein, each of the at least one light-transmitting portion comprises:

[0163] circular light-transmitting portions, the circular light-transmitting portions being arranged in a zigzag pattern along a first direction and a second direction intersecting the first direction in the second region,

[0164] Each of the plurality of pixel groups in the second region comprises a second electrode, and

[0165] At least a portion of the second electrode is removed from the light-transmitting area of ​​the second region to form the at least one light-transmitting portion.

[0166] Solution 2. The display panel according to Solution 1, wherein each of the plurality of pixels in the first area comprises:

[0167] Light emitting element;

[0168] a first thin film transistor;

[0169] a second thin film transistor; and

[0170] Capacitor.

[0171] Solution 3. The display panel according to Solution 1, wherein each of the plurality of pixel groups in the second region includes a plurality of pixels, and

[0172] Wherein, each pixel group of the multiple pixel groups is arranged between two or more light-transmitting portions of the at least one light-transmitting portion, so that the two or more light-transmitting portions are spaced apart from each other, and each pixel group of the multiple pixel groups includes one or two pixels, or three or four sub-pixels.

[0173] Solution 4. The display panel according to Solution 3, wherein each pixel in the plurality of pixels in each pixel group in the plurality of pixel groups comprises:

[0174] a light emitting element comprising the second electrode;

[0175] a second thin film transistor; and

[0176] Capacitor.

[0177] Solution 5. The display panel according to Solution 2, wherein the semiconductor pattern of the first thin film transistor includes low temperature polysilicon (LTPS), and the semiconductor pattern of the second thin film transistor includes an oxide semiconductor.

[0178] Solution 6. The display panel according to Solution 4, wherein the semiconductor pattern of the second thin film transistor comprises an oxide semiconductor.

[0179] Solution 7. The display panel according to Solution 1, wherein each of the first area and the second area comprises:

[0180] a thin film transistor disposed above the substrate;

[0181] a capacitor comprising at least one capacitor electrode; and

[0182] A light emitting device including the second electrode.

[0183] Solution 8. The display panel according to Solution 7, wherein the at least one light-transmitting portion is formed by removing the at least a portion of the second electrode in the second region using the at least one capacitor electrode in the second region as a mask.

[0184] Solution 9. The display panel according to Solution 1, wherein the first area comprises:

[0185] a first thin film transistor; and

[0186] a second thin film transistor, and

[0187] The second region includes the second thin film transistor.

[0188] Solution 10. A method for manufacturing a display panel,

[0189] The display panel comprises:

[0190] A display area, the display area including a first pixel area in which a plurality of pixels are arranged; and

[0191] an imaging area, the imaging area including a second pixel area provided with a plurality of pixel groups and at least one light-transmitting portion provided between the plurality of pixel groups,

[0192] The method comprises:

[0193] forming a capacitor electrode in the second pixel region of the imaging region; and

[0194] The at least one light-transmitting portion is formed by removing at least a portion of the second electrode in the imaging region by irradiating a laser beam using the capacitor electrode as a mask.

[0195] Option 11. The method according to Option 10, wherein one or more thin film transistors, capacitors, and light-emitting elements are deposited over the substrate in the first pixel area, and one or more thin film transistors, a capacitor including the capacitor electrode, and a light-emitting element including the second electrode are deposited over the substrate in the second pixel area.

[0196] Wherein, thin film transistors of different types are arranged in the first pixel region, and thin film transistors of a single type are arranged in the second pixel region.

[0197] Solution 12. The method according to solution 11, wherein the different types of thin film transistors in the first pixel area are used as first thin film transistors and second thin film transistors, and

[0198] The single type of thin film transistor in the second pixel area is used as the second thin film transistor.

[0199] Option 13. The method according to Option 12, wherein the first thin film transistor includes a low temperature polysilicon (LTPS) semiconductor pattern, and the second thin film transistor includes an oxide semiconductor pattern.

[0200] Solution 14. A display panel comprising:

[0201] A first area having a plurality of pixels is provided;

[0202] A second region having a plurality of pixel groups, the second region including at least one light-transmitting portion disposed between the plurality of pixel groups;

[0203] wherein the at least one light-transmitting portion is located in an area from which at least a portion of the second electrode included in the plurality of pixel groups arranged in the second area is removed, and is located in at least a portion of an area other than an area where the following capacitor electrode is arranged: the capacitor electrode is included in the plurality of pixel groups arranged in the second area.

[0204] Solution 15. The display panel according to Solution 14, wherein, in a region other than the region where the capacitor electrode arranged in the second region is provided, at least a portion of the second electrode provided in the second region is removed.

[0205] Embodiment 16. The display panel according to Embodiment 14, wherein the second electrode disposed in the second region is located in a region overlapping with the capacitor electrode disposed in the second region.

[0206] Embodiment 17. The display panel according to Embodiment 14, wherein the capacitor electrode provided in the second region is provided in the same layer as a layer in which a gate electrode of a thin film transistor provided in the first region is provided.

[0207] Option 18. A display panel according to Option 17, wherein the thin film transistor arranged in the first region is arranged in a layer different from a layer in which the following thin film transistor is arranged: the thin film transistor is arranged in the second region.

[0208] Option 19. A display device comprising a display panel according to any one of Options 1-9 and 14-18.

[0209] The discussion and drawings given above are merely exemplary in nature and are not intended to limit the present disclosure or its applications. It should be noted that various modifications and changes in the described examples and embodiments, such as combinations, separations, replacements, and changes in configurations will be apparent to those skilled in the art without departing from the scope of the embodiments and examples of the present disclosure. Although exemplary embodiments are described for illustrative purposes, it will be understood by those skilled in the art that various modifications and applications are possible without departing from the essential features of the present disclosure. For example, various modifications may be made to specific portions of the exemplary embodiments. The scope of protection of the present disclosure should be interpreted according to the claims, and all technical ideas within the scope of the claims should be interpreted as included within the scope of the present invention.

Claims

1. A display panel, comprising: a first region comprising a first plurality of sub-pixels; a second region including a second plurality of sub-pixels; as well as at least one light-transmitting portion, the at least one light-transmitting portion being disposed between adjacent pixel groups in the second plurality of sub-pixels in the second region, Wherein, the first sub-pixel in the first plurality of sub-pixels in the first area comprises: a first light-emitting layer; a first thin film transistor including a first channel region; and a first capacitor electrode, the first capacitor electrode being disposed below the first channel region of the first thin film transistor and overlapping the first channel region, Wherein, the second sub-pixel in the second plurality of sub-pixels in the second area comprises: a second light emitting layer; a second thin film transistor including a second channel region; and a second capacitor electrode, the second capacitor electrode being disposed below the second channel region of the second thin film transistor and overlapping the second channel region, and The first capacitor electrode in the first sub-pixel in the first region is disposed in a different layer from the second capacitor electrode in the second sub-pixel in the second region.

2. The display panel according to claim 1, further comprising: a substrate on which at least a portion of the first sub-pixel and at least a portion of the second sub-pixel are disposed, The first capacitor electrode is disposed in a lower layer relative to the substrate than the second capacitor electrode.

3. The display panel according to claim 2, wherein: An additional layer or a material different from the respective materials of the first capacitor electrode and the second capacitor electrode is disposed between a lower surface of the first capacitor electrode and a lower surface of the second capacitor electrode.

4. The display panel according to claim 1, wherein: The first capacitor electrode and the second capacitor electrode are configured to provide substantially the same conductive function in the corresponding first sub-pixel and second sub-pixel.

5. The display panel according to claim 1, further comprising: An insulating layer is disposed between the first capacitor electrode and the second capacitor electrode.

6. The display panel according to claim 5, wherein: The first sub-pixel further includes a third capacitor electrode disposed on the insulating layer, and the second sub-pixel further includes a fourth capacitor electrode disposed on the insulating layer, and Wherein, the first capacitor electrode at least partially overlaps the third capacitor electrode, and the second capacitor electrode at least partially overlaps the fourth capacitor electrode.

7. The display panel according to claim 5, wherein: Both the first capacitor electrode and the second capacitor electrode include molybdenum.

8. The display panel according to claim 5, wherein: The first capacitor electrode in the first sub-pixel has a different structure from the second capacitor electrode in the second sub-pixel.

9. The display panel according to claim 1, further comprising: an insulating layer disposed in the first sub-pixel and the second sub-pixel, Wherein, both the first capacitor electrode and the second capacitor electrode are arranged under the insulating layer.

10. The display panel according to claim 9, wherein: The first capacitor electrode includes titanium and the second capacitor electrode includes molybdenum.

11. The display panel according to claim 1, wherein: The second region includes a plurality of light-transmitting portions, and The first light-transmitting portion located at the outer boundary of the second region among the plurality of light-transmitting portions has a shape different from the second light-transmitting portion located at other regions outside the outer boundary of the second region among the plurality of light-transmitting portions.

12. The display panel according to claim 1, wherein: The pixel group is disposed between two adjacent light-transmitting portions, and the pixel group includes a color ratio of 1:2:1 for a red sub-pixel, a green sub-pixel, and a blue sub-pixel.

13. A display panel, comprising: a first region comprising a first plurality of sub-pixels; a second region including a second plurality of sub-pixels; as well as at least one light-transmitting portion, the at least one light-transmitting portion being disposed between adjacent pixel groups in the second plurality of sub-pixels in the second region, Wherein, at least one sub-pixel in the second plurality of sub-pixels comprises: a first electrode; a second electrode; a light-emitting layer disposed between the first electrode and the second electrode; a thin film transistor electrically connected to the first electrode, the thin film transistor comprising a channel region; and a capacitor comprising a first conductive layer and a second conductive layer, and Wherein, a portion of the first conductive layer is disposed below the channel region of the thin film transistor and overlaps with the channel region.

14. The display panel according to claim 13, wherein: The channel region of the thin film transistor includes an oxide semiconductor.

15. The display panel according to claim 13, wherein: An insulating layer is disposed between the first conductive layer and the second conductive layer.

16. The display panel according to claim 15, wherein: At least one of the first conductive layer and the second conductive layer includes molybdenum.

17. The display panel according to claim 15, wherein: A second sub-pixel in the first plurality of sub-pixels in the first region comprises: a first electrode; a second electrode; a light-emitting layer disposed between the first electrode and the second electrode; a second thin film transistor electrically connected to the first electrode, the second thin film transistor including a channel region; and a second capacitor disposed below the channel region of the second thin film transistor and overlapping the channel region, and The insulating layer is disposed between the second thin film transistor and the second capacitor of at least one sub-pixel among the first plurality of sub-pixels.

18. The display panel according to claim 17, wherein: The second sub-pixel further includes: a third thin film transistor electrically connected to the first electrode, the third thin film transistor comprising a channel region, Wherein, the channel region of the third thin film transistor includes low temperature polycrystalline silicon (LTPS).

19. The display panel according to claim 13, wherein: The second region includes a plurality of light-transmitting portions, and The first light-transmitting portion located at the outer boundary of the second region among the plurality of light-transmitting portions has a shape different from the second light-transmitting portion located at other regions outside the outer boundary of the second region among the plurality of light-transmitting portions.

20. The display panel according to claim 13, wherein: The pixel group is disposed between two adjacent light-transmitting portions, and the pixel group includes a color ratio of 1:2:1 for a red sub-pixel, a green sub-pixel, and a blue sub-pixel.

21. A display panel, comprising: a first region comprising a first plurality of sub-pixels; a second region including a second plurality of sub-pixels; as well as at least one light-transmitting portion, the at least one light-transmitting portion being disposed between adjacent pixel groups in the second plurality of sub-pixels in the second region, Wherein, at least one sub-pixel in the first plurality of sub-pixels or the second plurality of sub-pixels comprises: a first electrode; a second electrode; a light-emitting layer disposed between the first electrode and the second electrode; a thin film transistor electrically connected to the first electrode, the thin film transistor comprising a channel region; and a capacitor comprising a first conductive layer and a second conductive layer, and Wherein, a portion of the first conductive layer is disposed below the channel region of the thin film transistor and overlaps with the channel region.

22. The display panel according to claim 21, wherein: The second region includes a plurality of light-transmitting portions, and The first light-transmitting portion located at the outer boundary of the second region among the plurality of light-transmitting portions has a shape different from the second light-transmitting portion located at other regions outside the outer boundary of the second region among the plurality of light-transmitting portions.

23. The display panel according to claim 21, wherein: The pixel group is disposed between two adjacent light-transmitting portions, and the pixel group includes a color ratio of 1:2:1 for a red sub-pixel, a green sub-pixel, and a blue sub-pixel.

24. The display panel according to claim 21, wherein: The second region includes a plurality of light-transmitting portions arranged in a grid arrangement or a lattice arrangement.

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