Atomic layer deposition method

Abstract

The present invention relates to an atomic layer deposition (ALD) method for forming an IGZO channel layer of a transistor device, the method comprising: a deposition cycle step of performing a deposition cycle of depositing an IGZO channel layer on a substrate; and a repeating step of repeating the deposition cycle step until an IGZO channel layer having a predetermined thickness is formed, in which the IGZO channel layer is formed by performing an indium oxide sub-cycle of depositing indium oxide (InO), a gallium oxide sub-cycle of depositing gallium oxide (GaO), and a zinc oxide sub-cycle of depositing zinc oxide (ZnO).

Description

Technical Field

[0001] The invention relates to an atomic layer deposition method for depositing an oxide semiconductor film on a substrate. Background Art

[0002] The oxide semiconductor is formed of a metal oxide in a semiconductor and may be deposited on a substrate in a process of manufacturing an electronic device such as a display device or a solar cell, and thus may be implemented as an oxide semiconductor thin film.

[0003] For example, an indium gallium zinc oxide (IGZO) layer formed of indium (In), gallium (Ga), zinc (Zn), and oxygen (O) may be deposited on a substrate in a process of manufacturing a transistor device of an electronic device and may be implemented as an oxide semiconductor thin film.

[0004] Such an IGZO layer has the characteristics of good electron mobility and low current leakage, and therefore has attracted much attention as a thin film that is important for enhancing the performance of transistor devices. In addition, among the materials constituting the IGZO layer, indium is related to the carrier function of electron mobility, gallium is related to the carrier function of current leakage, zinc is related to the carrier function of chemical structure stability, and oxygen is related to the carrier function of electrical conduction. In view of this, it is necessary to develop an atomic layer deposition (ALD) method that can deposit an IGZO layer with enhanced performance by using indium, gallium, zinc and oxygen. Summary of the invention

[0005] Technical issues

[0006] The present invention is to solve the above-mentioned problems and to provide an atomic layer deposition method capable of depositing an IGZO layer having enhanced performance by using indium, gallium, zinc, and oxygen.

[0007] Technical Solution

[0008] In order to achieve the above objectives, the present invention may include the following elements.

[0009] The atomic layer deposition method according to the present invention is an atomic layer deposition (ALD) method for forming an IGZO channel layer of a transistor device, and may include: a deposition cycle step of performing a deposition cycle of depositing an IGZO channel layer on a substrate; and a repetitive step of repeatedly performing the deposition cycle step until an IGZO channel layer having a predetermined thickness is formed. The deposition cycle step may perform an indium oxide sub-cycle of depositing indium oxide (InO), a gallium oxide sub-cycle of depositing gallium oxide (GaO), and a zinc oxide sub-cycle of depositing zinc oxide (ZnO) to deposit the IGZO channel layer.

[0010] The atomic layer deposition method according to the present invention is an atomic layer deposition (ALD) method for forming an IGZO channel layer of a transistor device, which may include: a deposition cycle step of performing a deposition cycle of depositing an IGZO channel layer on a substrate; and a repetitive step of repeatedly performing the deposition cycle step until an IGZO channel layer having a predetermined thickness is formed. The deposition cycle step may include: a gallium indium oxide deposition step of sequentially performing a gallium oxide sub-cycle of depositing gallium oxide (GaO) and an indium oxide sub-cycle of depositing indium oxide (InO) at least once; and a zinc oxide deposition step of depositing a zinc oxide sub-cycle of depositing zinc oxide (ZnO) at least once.

[0011] The atomic layer deposition method according to the present invention is an atomic layer deposition (ALD) method for forming an IGZO channel layer of a transistor device, and may include: a deposition cycle step of performing a deposition cycle of depositing an IGZO channel layer on a substrate; and a repetitive step of repeatedly performing the deposition cycle step until an IGZO channel layer having a predetermined thickness is formed. The deposition cycle step may include: a gallium indium oxide deposition step of sequentially performing an indium oxide sub-cycle of depositing indium oxide (InO) and a gallium oxide sub-cycle of depositing gallium oxide (GaO) at least once; and a zinc oxide deposition step of depositing a zinc oxide sub-cycle of depositing zinc oxide (ZnO) at least once.

[0012] Beneficial Effects

[0013] According to the present invention, the following effects can be achieved.

[0014] The present invention deposits indium oxide, gallium oxide and zinc oxide separately on a substrate through an atomic layer deposition process, and is thus implemented to form an IGZO channel layer. Therefore, the present invention can enhance the overall film quality of the IGZO channel layer, and thus can help enhance the performance of transistor devices.

[0015] The present invention is implemented to enhance the accuracy and ease of operation of controlling the composition ratio of indium, gallium and zinc to correspond to the type and specification of transistor devices. Therefore, the present invention can enhance the responsiveness to changes in the type and specification of transistor devices, and can enhance the versatility of the formation of IGZO channel layers that can be applied to various transistor devices.

[0016] The present invention may be implemented as a gallium indium oxide deposition step including depositing gallium oxide and indium oxide. In this case, the step coverage of the IGZO channel layer may be improved. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] Figure 1 is a schematic block diagram showing an embodiment of an atomic layer deposition apparatus for performing an atomic layer deposition method according to the present invention.

[0018] Figure 2 and Figure 3 is a schematic side sectional view of a spray unit that sprays a gas in an embodiment of an atomic layer deposition apparatus that performs an atomic layer deposition method according to the present invention.

[0019] Figure 4 is a schematic side cross-sectional view illustrating an embodiment of a transistor device.

[0020] Figures 5 to 9 is a schematic flow chart of an atomic layer deposition method according to the present invention. DETAILED DESCRIPTION

[0021] Hereinafter, an embodiment of the atomic layer deposition method according to the present invention will be described in detail with reference to the accompanying drawings. When describing an embodiment of the present invention, when any structure is described as being formed "on" or "under" another structure, this description should be interpreted as including a case where a third structure is disposed between these structures, and a case where these structures are in contact with each other.

[0022] refer to Figures 1 to 4 According to the atomic layer deposition method of the present invention, an oxide semiconductor thin film is formed on a substrate S through an atomic layer deposition (ALD) process. The substrate S may be a silicon substrate, a glass substrate, a metal substrate, etc. According to the atomic layer deposition method of the present invention, an IGZO layer may be formed on a substrate S by using indium (In), gallium (Ga), zinc (Zn) and oxygen (O). Such an IGZO layer may be implemented as a channel layer in a transistor device of an electronic device such as a display device or a solar cell.

[0023] The atomic layer deposition method according to the present invention may be performed by the atomic layer deposition apparatus 1. Before describing an embodiment of the atomic layer deposition method according to the present invention, an example of the atomic layer deposition apparatus 1 will be described in detail below.

[0024] refer to Figures 1 to 3 The atomic layer deposition device 1 may include a chamber 2 , a base 3 and a spray unit 4 .

[0025] The chamber 2 provides a processing space 100. A process of forming an IGZO channel layer of a transistor on a substrate S by an atomic layer deposition process may be performed in the processing space 100. The processing space 100 may be disposed in the chamber 2. An exhaust port (not shown) for exhausting gas from the processing space 100 may be coupled to the chamber 2. A susceptor 3 and an injection unit 4 may be disposed in the chamber 2.

[0026] The susceptor 3 supports the substrate S. The susceptor 3 may support one substrate S, or may support a plurality of substrates S. In the case where the susceptor 3 supports a plurality of substrates S, a process of sequentially forming an IGZO channel layer on the substrates S by an atomic layer deposition process on the plurality of substrates S may be performed. The susceptor 3 may be coupled to the chamber 2. The susceptor 3 may be disposed in the chamber 2.

[0027] The injection unit 4 injects gas toward the susceptor 3. The injection unit 4 may be connected to the gas storage unit 40. In this case, the injection unit 4 may inject gas supplied from the gas storage unit 40 toward the susceptor 3. The injection unit 4 may be disposed in the chamber 2. The injection unit 4 may be disposed opposite to the susceptor 3. The injection unit 4 may be disposed above the susceptor 3. The processing space 100 may be disposed between the injection unit 4 and the susceptor 3. The injection unit 4 may be coupled to a cover (not shown). The cover may be coupled to the chamber 2 to cover the upper portion of the chamber 2.

[0028] The injection unit 4 may include a first gas flow path 4a and a second gas flow path 4b.

[0029] The first gas flow path 4a is used to inject the first gas. One side of the first gas flow path 4a can be connected to the gas storage unit 40 by a pipe, a hose, etc. The other side of the first gas flow path 4a can be communicated with the processing space 100. Therefore, the first gas supplied from the gas storage unit 40 can flow along the first gas flow path 4a, and then can be injected into the processing space 100 through the first gas flow path 4a. The first gas flow path 4a can be used as a flow path that enables the first gas to flow, and can be used as an injection port for injecting the first gas into the processing space 100.

[0030] The second gas flow path 4b is used to inject the second gas. The second gas and the first gas can be different gases. For example, when the first gas is a source gas, the second gas can be a reaction gas. One side of the second gas flow path 4b can be connected to the gas storage unit 40 by a pipeline, a hose, etc. The other side of the second gas flow path 4b can be connected to the processing space 100. Therefore, the second gas supplied from the gas storage unit 40 can flow along the second gas flow path 4b, and then can be injected into the processing space 100 through the second gas flow path 4b. The second gas flow path 4b can be used as a flow path that enables the second gas to flow, and can be used as an injection port for injecting the second gas into the processing space 100.

[0031] The second gas flow path 4b and the first gas flow path 4a may be provided to be spatially separated from each other. Therefore, the second gas supplied from the gas storage unit 40 to the second gas flow path 4b may be ejected into the processing space 100 without passing through the first gas flow path 4a. The first gas supplied from the gas storage unit 40 to the first gas flow path 4a may be ejected into the processing space 100 without passing through the second gas flow path 4b. The second gas flow path 4b and the first gas flow path 4a may eject gas toward different portions of the processing space 100.

[0032] like Figure 2 As shown, the spray unit 4 may include a first plate 41 and a second plate 42 .

[0033] The first plate 41 is disposed above the second plate 42. The first plate 41 and the second plate 42 may be disposed to be spaced apart from each other. A plurality of first gas holes 411 may be formed in the first plate 41. Each of the first gas holes 411 may be used as a path for enabling the first gas to flow. The first gas hole 411 may be included in the first gas flow path 4a. A plurality of second gas holes 412 may be formed in the second plate 42. Each of the second gas holes 412 may be used as a path for enabling the second gas to flow. The second gas hole 412 may be included in the second gas flow path 4b. A plurality of protrusion members 413 may be coupled to the first plate 41. The protrusion member 413 may protrude from the lower surface of the first plate 41 toward the second plate 42. Each of the first gas holes 411 may be formed to pass through the first plate 41 and the protrusion member 413.

[0034] A plurality of openings 421 may be formed in the second plate 42. The openings 421 may be formed to penetrate the second plate 42. The openings 421 may be respectively disposed at positions corresponding to the protruding members 413. Figure 2 As shown, the protrusion members 413 may be formed to have a length that enables the protrusion members 413 to be respectively inserted into the openings 421. Although not shown, the protrusion members 413 may be formed to have a length that enables the protrusion members 413 to be respectively disposed above the openings 421. The protrusion members 413 may be formed to have a length that protrudes downward from the second plate 42. The second gas holes 412 may be provided to spray gas toward the upper surface of the second plate 42.

[0035] The ejection unit 4 may generate plasma by using the second plate 42 and the first plate 41. In this case, plasma power such as radio frequency (RF) power may be applied to the first plate 41, and the second plate 42 may be grounded. The first plate 41 may be grounded, and plasma power may be applied to the second plate 42.

[0036] like Figure 3 As shown, a plurality of first openings 422 and a plurality of second openings 423 may be formed in the second plate 42 .

[0037] The first openings 422 may be formed to penetrate the second plate 42. The first openings 422 may be connected to the first gas holes 411, respectively. In this case, the protrusion member 413 may be disposed to contact the upper surface of the second plate 42. The first gas may be injected into the processing space 100 via the first gas holes 411 and the first openings 422. The first gas holes 411 and the first openings 422 may be included in the first gas flow path 4a.

[0038] The second openings 423 may be formed to pass through the second plate 42. The second openings 423 may be connected to the buffer spaces 43 provided between the first plate 41 and the second plate 42, respectively. The second gas may be injected into the processing space 100 via the second gas holes 412, the buffer space 43, and the second openings 423. The second gas holes 412, the buffer space 43, and the second openings 423 may be included in the second gas flow path 4b.

[0039] The atomic layer deposition method according to the present invention may be performed by an atomic layer deposition apparatus 1 .

[0040] refer to Figures 1 to 5 ,like Figure 4 As shown, the atomic layer deposition method according to the present invention can form an IGZO channel layer 230 in a transistor device 200 including an insulating layer 210, a gate 220, an IGZO channel layer 230, a source 240, and a drain 250. The insulating layer 210 can be disposed between the gate 220 and the IGZO channel layer 230. The gate 220 can be formed on a substrate S. The IGZO channel layer 230 can be formed on the insulating layer 210. The source 240 and the drain 250 can be formed on the IGZO channel layer 230.

[0041] The atomic layer deposition method according to the present invention may include a deposition cycle step S100 and a repetition step S200 .

[0042] The deposition cycle step S100 performs a deposition cycle of depositing the IGZO channel layer 230 on the substrate S. The deposition cycle step S100 may perform a deposition cycle by using indium, gallium, zinc, and oxygen, so that the IGZO channel layer 230 may be deposited on the substrate S.

[0043] Repeating step S200 repeatedly performs deposition cycle step S100. Repeating step S200 may repeatedly perform deposition cycle step S100 until an IGZO channel layer 230 having a predetermined thickness is formed. Here, the predetermined thickness may vary based on the type and specification of the transistor device 200 and may be preset by a staff member.

[0044] Here, the deposition cycle step S100 may perform an indium oxide sub-cycle ISC for depositing indium oxide (InO), a gallium oxide sub-cycle GSC for depositing gallium oxide (GaO), and a zinc oxide sub-cycle ZSC for depositing zinc oxide (ZnO) to deposit the IGZO channel layer 230. Therefore, the atomic layer deposition method according to the present invention may be implemented to separately deposit indium oxide, gallium oxide, and zinc oxide on the substrate S to form the IGZO channel layer 230, and thus the overall film quality of the IGZO channel layer 230 may be enhanced. Therefore, the atomic layer deposition method according to the present invention may enhance the performance of the IGZO channel layer 230 by enhancing the film quality, and thus may contribute to enhancing the performance of the transistor device 200. In addition, the atomic layer deposition method according to the present invention is implemented to separately deposit gallium oxide and zinc oxide on the substrate S, and thus the accuracy and ease of the operation of controlling the composition ratio of indium, gallium, and zinc may be enhanced to correspond to the type and specification of the transistor device. Therefore, the atomic layer deposition method according to the present invention can enhance the responsiveness to the changes in the types and specifications of the transistor device 200 , and can enhance the versatility of forming the IGZO channel layer that can be applied to various transistor devices 200 .

[0045] The indium oxide sub-cycle ISC may sequentially perform the injection of a source gas containing indium and the injection of a reaction gas containing oxygen to deposit indium oxide through an atomic layer deposition process. The indium oxide sub-cycle ISC may sequentially perform the injection of a source gas containing indium and the injection of a reaction gas containing oxygen multiple times to deposit indium oxide through an atomic layer deposition process. As described above, the atomic layer deposition method according to the present invention can enhance the film quality of indium oxide deposited on the substrate S through the indium oxide sub-cycle ISC, and thus can enhance the film quality of the IGZO channel layer 230. A source gas containing indium may be injected toward the substrate S through the first gas flow path 4a. A reaction gas containing oxygen may be injected toward the substrate S through the second gas flow path 4b.

[0046] The gallium oxide sub-cycle GSC may sequentially perform the injection of a source gas containing gallium and the injection of a reaction gas containing oxygen to deposit gallium oxide through an atomic layer deposition process. The gallium oxide sub-cycle GSC may sequentially perform the injection of a source gas containing gallium and the injection of a reaction gas containing oxygen multiple times to deposit gallium oxide through an atomic layer deposition process. As described above, the atomic layer deposition method according to the present invention can enhance the film quality of gallium oxide deposited on the substrate S through the gallium oxide sub-cycle GSC, and thus can enhance the film quality of the IGZO channel layer 230. A source gas containing gallium may be injected toward the substrate S through the first gas flow path 4a. A reaction gas containing oxygen may be injected toward the substrate S through the second gas flow path 4b.

[0047] The zinc oxide sub-cycle ZSC may sequentially perform the injection of a source gas containing zinc and the injection of a reaction gas containing oxygen to deposit zinc oxide through an atomic layer deposition process. The zinc oxide sub-cycle ZSC may sequentially perform the injection of a source gas containing zinc and the injection of a reaction gas containing oxygen multiple times to deposit zinc oxide through an atomic layer deposition process. As described above, the atomic layer deposition method according to the present invention may enhance the film quality of zinc oxide deposited on the substrate S through the zinc oxide sub-cycle ZSC, and thus may enhance the film quality of the IGZO channel layer 230. A source gas containing zinc may be injected toward the substrate S through the first gas flow path 4a. A reaction gas containing oxygen may be injected toward the substrate S through the second gas flow path 4b.

[0048] refer to Figures 1 to 6 , the deposition cycle step S100 may include a zinc indium oxide deposition step S110 .

[0049] The zinc indium oxide deposition step S110 sequentially performs a zinc oxide sub-cycle ZSC and an indium oxide sub-cycle ISC. Zinc oxide and indium oxide may be sequentially deposited on the substrate S through the zinc indium oxide deposition step S110, so that zinc indium oxide may be formed on the substrate S. The zinc indium oxide deposition step S110 may sequentially perform a zinc oxide sub-cycle ZSC and an indium oxide sub-cycle ISC multiple times. In the zinc indium oxide deposition step S110, each of a source gas containing zinc and a source gas containing indium may be sprayed toward the substrate S through the first gas flow path 4a, and a reaction gas containing oxygen may be sprayed toward the substrate S through the second gas flow path 4b.

[0050] refer to Figures 1 to 6 , the deposition cycle step S100 may include a gallium indium oxide deposition step S120 .

[0051] The gallium indium oxide deposition step S120 sequentially performs a gallium oxide sub-cycle GSC and an indium oxide sub-cycle ISC. Gallium oxide and indium oxide may be sequentially deposited on the substrate S through the gallium indium oxide deposition step S120, so that gallium indium oxide may be formed on the substrate S. The gallium indium oxide deposition step S120 may sequentially perform a gallium oxide sub-cycle GSC and an indium oxide sub-cycle ISC multiple times. In the gallium indium oxide deposition step S120, each of a source gas containing gallium and a source gas containing indium may be sprayed toward the substrate S through the first gas flow path 4a, and a reaction gas containing oxygen may be sprayed toward the substrate S through the second gas flow path 4b. Based on the gallium indium oxide deposition step S120 of depositing indium oxide after depositing gallium oxide, the atomic layer deposition method according to the present invention may improve the step coverage of the IGZO channel layer 230.

[0052] The gallium indium oxide deposition step S120 may sequentially perform an indium oxide sub-cycle ISC and a gallium oxide sub-cycle GSC. Indium oxide and gallium oxide may be sequentially deposited on the substrate S through the gallium indium oxide deposition step S120, so that gallium indium oxide may be formed on the substrate S. The gallium indium oxide deposition step S120 may sequentially perform an indium oxide sub-cycle ISC and a gallium oxide sub-cycle GSC multiple times. As described above, based on the gallium indium oxide deposition step S120 of depositing gallium oxide after depositing indium oxide, the atomic layer deposition method according to the present invention may improve the step coverage of the IGZO channel layer 230.

[0053] refer to Figures 1 to 6 , the deposition cycle step S100 may include a gallium zinc oxide deposition step S130 .

[0054] The gallium zinc oxide deposition step S130 sequentially performs a gallium oxide sub-cycle GSC and a zinc oxide sub-cycle ZSC. Gallium oxide and zinc oxide may be sequentially deposited on the substrate S through the gallium zinc oxide deposition step S130, so that gallium zinc oxide may be formed on the substrate S. The gallium zinc oxide deposition step S130 may sequentially perform a gallium oxide sub-cycle GSC and a zinc oxide sub-cycle ZSC multiple times. In the gallium zinc oxide deposition step S130, each of a source gas containing gallium and a source gas containing zinc may be sprayed toward the substrate S through the first gas flow path 4a, and a reaction gas containing oxygen may be sprayed toward the substrate S through the second gas flow path 4b.

[0055] refer to Figures 1 to 6 , the deposition cycle step S100 may include a zinc indium oxide deposition step S110, a gallium indium oxide deposition step S120, and a gallium zinc oxide deposition step S130. The deposition cycle step S100 may be implemented to be suitable for depositing an IGZO channel layer 230 composed of zinc, indium, and gallium with a substantially matched composition ratio. In addition, the repeating step S200 may sequentially and repeatedly perform the zinc indium oxide deposition step S110, the gallium indium oxide deposition step S120, and the gallium zinc oxide deposition step S130. Therefore, the atomic layer deposition method according to the present invention can form an IGZO channel layer 230 of a predetermined thickness on the substrate S.

[0056] The deposition cycle step S100 may include a zinc indium oxide deposition step S110 and a gallium indium oxide deposition step S120. In this case, the deposition cycle step S100 does not include a gallium zinc oxide deposition step S130. The deposition cycle step S100 may be implemented to be suitable for depositing an IGZO channel layer 230 composed of a composition ratio in which the ratio of indium is greater than the ratio of each of zinc and gallium. In addition, the repetition step S200 may sequentially and repeatedly perform the zinc indium oxide deposition step S110 and the gallium indium oxide deposition step S120.

[0057] The deposition cycle step S100 may include a gallium indium oxide deposition step S120 and a gallium zinc oxide deposition step S130. In this case, the deposition cycle step S100 does not include the zinc indium oxide deposition step S110. The deposition cycle step S100 may be implemented to be suitable for depositing an IGZO channel layer 230 composed of a composition ratio in which the ratio of gallium is greater than the ratio of each of indium and zinc. In addition, the repetition step S200 may sequentially and repeatedly perform the gallium indium oxide deposition step S120 and the gallium zinc oxide deposition step S130.

[0058] The deposition cycle step S100 may include a gallium zinc oxide deposition step S130 and a zinc indium oxide deposition step S110. In this case, the deposition cycle step S100 does not include a gallium indium oxide deposition step S120. The deposition cycle step S100 may be implemented to be suitable for depositing an IGZO channel layer 230 composed of a composition ratio in which the ratio of zinc is greater than the ratio of each of indium and gallium. In addition, the repetition step S200 may sequentially and repeatedly perform the gallium zinc oxide deposition step S130 and the zinc indium oxide deposition step S110.

[0059] refer to Figures 1 to 7 In addition to the zinc indium oxide deposition step S110, the deposition cycle step S100 may further include a gallium oxide deposition step S140. In this case, the deposition cycle step S100 may not include the gallium indium oxide deposition step S120 and the gallium zinc oxide deposition step S130.

[0060] The gallium oxide deposition step S140 may perform a gallium oxide sub-cycle GSC. Gallium oxide may be deposited on the substrate S through the gallium oxide deposition step S140. The gallium oxide deposition step S140 may perform a gallium oxide sub-cycle GSC multiple times. The deposition cycle step S100 may be implemented to be suitable for depositing an IGZO channel layer 230 composed of zinc, indium, and gallium with approximately matched composition ratios. In addition, the repeating step S200 may sequentially and repeatedly perform the zinc indium oxide deposition step S110 and the gallium oxide deposition step S140.

[0061] refer to Figures 1 to 8 In addition to the gallium indium oxide deposition step S120, the deposition cycle step S100 may further include a zinc oxide deposition step S150. In this case, the deposition cycle step S100 may not include the zinc indium oxide deposition step S110 and the gallium zinc oxide deposition step S130.

[0062] The zinc oxide deposition step S150 may perform a zinc oxide sub-cycle ZSC. Zinc oxide may be deposited on the substrate S through the zinc oxide deposition step S150. The zinc oxide deposition step S150 may perform a zinc oxide sub-cycle ZSC multiple times. The deposition cycle step S100 may be implemented to be suitable for depositing an IGZO channel layer 230 composed of zinc, indium, and gallium with approximately matched composition ratios. In addition, the repeating step S200 may sequentially and repeatedly perform the gallium indium oxide deposition step S120 and the zinc oxide deposition step S150.

[0063] In addition, the deposition cycle step S100 can be implemented to include a gallium indium oxide deposition step S120, so the atomic layer deposition method according to the present invention can improve the step coverage of the IGZO channel layer 230. The gallium indium oxide deposition step S120 can be performed by depositing indium oxide after depositing gallium oxide. The gallium indium oxide deposition step S120 can be performed by depositing gallium oxide after depositing indium oxide.

[0064] refer to Figures 1 to 9 In addition to the gallium zinc oxide deposition step S130, the deposition cycle step S100 may further include an indium oxide deposition step S160. In this case, the deposition cycle step S100 may not include the zinc indium oxide deposition step S110 and the gallium indium oxide deposition step S120.

[0065] The indium oxide deposition step S160 may perform an indium oxide sub-cycle ISC. Indium oxide may be deposited on the substrate S through the indium oxide deposition step S160. The indium oxide deposition step S160 may perform an indium oxide sub-cycle ISC multiple times. The deposition cycle step S100 may be implemented to be suitable for depositing an IGZO channel layer 230 composed of zinc, indium, and gallium having a substantially matched composition ratio. In addition, the repeating step S200 may sequentially and repeatedly perform the gallium zinc oxide deposition step S130 and the indium oxide deposition step S160.

[0066] The present invention described above is not limited to the above-described embodiments and drawings, and those skilled in the art will clearly understand that various modifications, variations, and substitutions may be made without departing from the scope and spirit of the present invention.

Claims

1. An atomic layer deposition (ALD) method for forming an IGZO channel layer of a transistor device, the atomic layer deposition method comprising: A deposition cycle step of performing a deposition cycle of depositing an IGZO channel layer on the substrate; as well as Repeating the deposition cycle step until an IGZO channel layer having a predetermined thickness is formed, The deposition cycle step includes an indium oxide sub-cycle for depositing indium oxide (InO), a gallium oxide sub-cycle for depositing gallium oxide (GaO), and a zinc oxide sub-cycle for depositing zinc oxide (ZnO) to deposit the IGZO channel layer.

2. The atomic layer deposition method according to claim 1, wherein: The indium oxide sub-cycle sequentially performs injection of a source gas containing indium (In) and injection of a reaction gas containing oxygen (O) at least once to deposit indium oxide by atomic layer deposition, The gallium oxide sub-cycle sequentially performs injection of a source gas containing gallium (Ga) and injection of a reaction gas containing oxygen (O) at least once to deposit gallium oxide by atomic layer deposition, and The zinc oxide sub-cycle sequentially performs injection of a source gas containing zinc (Zn) and injection of a reaction gas containing oxygen (O) at least once to deposit zinc oxide by atomic layer deposition.

3. The atomic layer deposition method according to claim 1, wherein: The deposition cycle steps include: A zinc indium oxide deposition step of sequentially performing the zinc oxide sub-cycle and the indium oxide sub-cycle at least once; A gallium indium oxide deposition step of sequentially performing the gallium oxide sub-cycle and the indium oxide sub-cycle at least once; and The gallium zinc oxide deposition step of sequentially performing the gallium oxide sub-cycle and the zinc oxide sub-cycle at least once.

4. The atomic layer deposition method according to claim 3, wherein: The repeating step sequentially and repeatedly performs the zinc indium oxide deposition step, the gallium indium oxide deposition step, and the gallium zinc oxide deposition step.

5. The atomic layer deposition method according to claim 1, wherein: The deposition cycle steps include: A zinc indium oxide deposition step of sequentially performing the zinc oxide sub-cycle and the indium oxide sub-cycle at least once; and The gallium indium oxide deposition step of sequentially performing the gallium oxide sub-cycle and the indium oxide sub-cycle at least once.

6. The atomic layer deposition method according to claim 1, wherein: The deposition cycle steps include: A gallium indium oxide deposition step of sequentially performing the gallium oxide sub-cycle and the indium oxide sub-cycle at least once; and The gallium zinc oxide deposition step of sequentially performing the gallium oxide sub-cycle and the zinc oxide sub-cycle at least once.

7. The atomic layer deposition method according to claim 1, wherein: The deposition cycle steps include: A gallium zinc oxide deposition step of sequentially performing the gallium oxide sub-cycle and the zinc oxide sub-cycle at least once; and The zinc indium oxide deposition step is performed in sequence with the zinc oxide sub-cycle and the indium oxide sub-cycle being performed at least once.

8. The atomic layer deposition method according to claim 1, wherein: The deposition cycle steps include: A zinc indium oxide deposition step of sequentially performing the zinc oxide sub-cycle and the indium oxide sub-cycle at least once; and The gallium oxide deposition step is performed at least once in the gallium oxide sub-cycle.

9. The atomic layer deposition method according to claim 1, wherein: The deposition cycle steps include: A gallium zinc oxide deposition step of sequentially performing the gallium oxide sub-cycle and the zinc oxide sub-cycle at least once; and The indium oxide deposition step is performed with the indium oxide sub-cycle at least once.

10. An atomic layer deposition (ALD) method for forming an IGZO channel layer of a transistor device, the atomic layer deposition method comprising: A deposition cycle step of performing a deposition cycle of depositing an IGZO channel layer on the substrate; as well as Repeating the deposition cycle step until the IGZO channel layer having a predetermined thickness is formed, Wherein, the deposition cycle step comprises: A gallium indium oxide deposition step of sequentially performing a gallium oxide sub-cycle of depositing gallium oxide (GaO) and an indium oxide sub-cycle of depositing indium oxide (InO) at least once; and The zinc oxide deposition step of depositing zinc oxide (ZnO) is performed at least once in a zinc oxide sub-cycle.

11. An atomic layer deposition (ALD) method for forming an IGZO channel layer of a transistor device, the atomic layer deposition method comprising: A deposition cycle step of performing a deposition cycle of depositing an IGZO channel layer on the substrate; as well as Repeating the deposition cycle step until the IGZO channel layer having a predetermined thickness is formed, Wherein, the deposition cycle step comprises: A gallium indium oxide deposition step of sequentially performing an indium oxide sub-cycle of depositing indium oxide (InO) and a gallium oxide sub-cycle of depositing gallium oxide (GaO) at least once; and The zinc oxide deposition step of depositing zinc oxide (ZnO) is performed at least once in a zinc oxide sub-cycle.

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