Method for preventing crystallization of hot plate exhaust pipeline of gluing developer and exhaust pipeline

Abstract

The embodiment of the invention provides a method for preventing crystallization of a hot plate exhaust pipeline of a gluing developer and the exhaust pipeline, and the method comprises the following steps: determining the use amount of a solvent which is suitable for dissolving a solute component separated from photoresist; atomizing the solvent to form solvent spray; and discharging the solvent spray to an exhaust pipeline to dissolve the solute component separated from the photoresist, and discharging a mixture of the solvent spray and the solute component from the exhaust pipeline. By adopting the scheme, the discharge of the photoresist volatile matters can be effectively promoted, so that the photoresist volatile matters can be prevented from crystallizing and accumulating in the exhaust pipeline and blocking the exhaust pipeline, and the probability that the semiconductor device generates defects can be reduced. In addition, the labor cost and the time cost for cleaning the exhaust pipeline can be reduced.

Description

Technical Field

[0001] The embodiments of the present specification relate to the field of semiconductor device manufacturing technology, and more particularly to a method for preventing crystallization of a hot plate exhaust pipeline of a glue coating and developing machine and an exhaust pipeline. Background Art

[0002] In the field of semiconductor device manufacturing technology, photoresist baking is a necessary step in the photolithography process, which is used to uniformly solidify the photoresist and eliminate the standing wave effect.

[0003] However, in the existing photoresist baking process, since the volatiles of the photoresist are difficult to be discharged from the hot plate exhaust pipe of the coating and developing machine in time, they are easy to crystallize and accumulate in the exhaust pipe, blocking the exhaust pipe, which can easily lead to defects in semiconductor devices. In addition, the blockage of the exhaust pipe will also cause the coating and developing machine to stop, thereby increasing the labor cost and time cost of cleaning the exhaust pipe. Summary of the invention

[0004] The embodiments of this specification provide a method and an exhaust pipe for preventing crystallization of a hot plate exhaust pipe of a coating developer, which can effectively promote the discharge of photoresist volatiles, thereby preventing the photoresist volatiles from crystallizing and accumulating in the exhaust pipe and blocking the exhaust pipe, thereby reducing the probability of defects in semiconductor devices. In addition, the labor cost and time cost of cleaning the exhaust pipe can also be reduced.

[0005] First, the embodiment of this specification provides a method for preventing crystallization of a hot plate exhaust pipe of a glue coating and developing machine, comprising:

[0006] determining an amount of a solvent suitable for dissolving the solute components separated from the photoresist;

[0007] atomizing the solvent to form a solvent spray;

[0008] The solvent spray is discharged to an exhaust line to dissolve the solute component separated from the photoresist, and a mixture of the solvent spray and the solute component is discharged from the exhaust line.

[0009] Optionally, determining the amount of solvent includes:

[0010] The amount of solvent used is determined based on the amount of photoresist carried by the wafer.

[0011] Optionally, determining the amount of solvent based on the amount of photoresist carried by the wafer includes:

[0012] determining the content of the solvent component of the photoresist;

[0013] Determining the amount of loss of the photoresist;

[0014] determining a separation amount of a solute component of the photoresist;

[0015] determining a ratio of the solvent and the solute component;

[0016] The amount of the solvent is determined based on the content of the solvent component of the photoresist, the loss amount of the photoresist, the separation amount of the solute component of the photoresist, and the ratio of the solvent to the solute component.

[0017] Optionally, the ratio of the solvent to the solute component is 1:1.

[0018] Optionally, atomizing the solvent to form a solvent spray comprises:

[0019] introducing the solvent through a preset pipeline;

[0020] At the end of the preset pipeline, the solvent is atomized by an atomizing device to form a solvent spray.

[0021] Optionally, discharging the solvent spray into an exhaust pipe comprises:

[0022] At a preset first time, the solvent spray is discharged into the exhaust line.

[0023] Optionally, the preset first moment is: the moment when the separation rate of the solute component of the photoresist reaches a preset threshold.

[0024] Optionally, discharging the solvent spray into the exhaust pipeline at a preset first moment includes:

[0025] At a preset first moment, a preset valve on the preset pipeline is opened to discharge the solvent spray into the exhaust pipeline.

[0026] Optionally, the atomization device includes: an atomization nozzle.

[0027] The embodiment of the present specification also provides a hot plate exhaust pipeline of a glue coating and developing machine, comprising:

[0028] a first transmission channel, adapted to introduce a solvent, the solvent being used to dissolve the solute component separated from the photoresist;

[0029] an atomizing device, connected to the first transmission pipeline, and adapted to atomize the solvent to form a solvent spray;

[0030] The second transmission pipeline is connected to the atomizing device and is suitable for discharging the mixture of the solvent spray and the solute component separated from the photoresist.

[0031] Optionally, the first transmission pipeline further comprises: a first valve, adapted to prevent the solvent from flowing back.

[0032] Optionally, the first valve comprises a one-way valve.

[0033] Optionally, the first transmission pipeline further comprises: a second valve, suitable for controlling the transmission of the solvent.

[0034] Optionally, the second valve comprises a solenoid valve.

[0035] Optionally, the atomization device comprises an atomization nozzle.

[0036] Optionally, the hot plate exhaust pipeline of the glue coating and developing machine also includes:

[0037] The control device is adapted to control the second valve to open at a preset first moment.

[0038] Optionally, the preset first moment is: the moment when the separation rate of the solute component of the photoresist reaches a preset threshold.

[0039] The method for preventing crystallization of the hot plate exhaust pipe of the coating developer provided in the embodiment of this specification is adopted, by determining the amount of solvent suitable for dissolving the solute components separated from the photoresist, and atomizing the solvent to form a solvent spray, and then discharging the solvent spray into the exhaust pipe to dissolve the solute components separated from the photoresist, and discharging the mixture of the solvent spray and the solute components from the exhaust pipe, which can effectively promote the discharge of photoresist volatiles, thereby preventing the photoresist volatiles from crystallizing and accumulating in the exhaust pipe and blocking the exhaust pipe, thereby reducing the probability of defects in semiconductor devices. In addition, the labor cost and time cost of cleaning the exhaust pipe can also be reduced.

[0040] Furthermore, determining the amount of solvent based on the amount of photoresist carried by the wafer can not only ensure that the solute components separated from the photoresist are fully dissolved, but also accurately control the amount of solvent to save costs.

[0041] Furthermore, by determining the content of the solvent component of the photoresist, the loss of the photoresist, the separation amount of the solute component of the photoresist, and the ratio of the solvent to the solute component, and then based on the content of the solvent component of the photoresist, the loss of the photoresist, the separation amount of the solute component of the photoresist, and the ratio of the solvent to the solute component, the amount of solvent used can be objectively and accurately determined, thereby effectively promoting the discharge of photoresist volatiles, further preventing photoresist volatiles from crystallizing and accumulating in the exhaust line and clogging the exhaust line, and further reducing the probability of defects in semiconductor devices.

[0042] Furthermore, when the ratio of the solvent to the solute component is 1:1, the solute component separated from the photoresist can be fully dissolved, thereby further promoting the discharge of photoresist volatiles, preventing the photoresist volatiles from crystallizing and accumulating in the exhaust pipe and clogging the exhaust pipe, thereby further reducing the probability of defects in semiconductor devices.

[0043] Furthermore, the solvent is introduced through a preset pipeline and then atomized by an atomizing device at the end of the preset pipeline, which can not only form the solvent spray quickly and conveniently but also prevent the solvent spray from overflowing.

[0044] Furthermore, by discharging the solvent spray into the exhaust pipe at a preset first moment, it can be further ensured that the solute components separated from the photoresist are fully dissolved in the solvent spray, thereby further promoting the discharge of the photoresist volatiles, further preventing the photoresist volatiles from crystallizing and accumulating in the exhaust pipe and clogging the exhaust pipe, thereby further reducing the probability of defects in semiconductor devices.

[0045] Furthermore, by discharging the solvent spray into the exhaust duct when the separation rate of the solute components of the photoresist reaches a preset threshold, it can further ensure that the solute components separated from the photoresist are fully dissolved in the solvent spray, thereby further promoting the discharge of the photoresist volatiles, further preventing the photoresist volatiles from crystallizing and accumulating in the exhaust duct and clogging the exhaust duct, thereby further reducing the probability of defects in semiconductor devices.

[0046] Furthermore, by opening a preset valve on the preset pipeline at a preset first moment and discharging the solvent spray into the exhaust pipeline, the discharge timing of the solvent spray can be accurately controlled, thereby saving the amount of solvent spray while ensuring that the solute components separated from the photoresist are fully dissolved in the solvent spray, thereby further promoting the discharge of photoresist volatiles, further preventing photoresist volatiles from crystallizing and accumulating in the exhaust pipeline and clogging the exhaust pipeline, thereby further reducing the probability of defects in semiconductor devices.

[0047] Furthermore, atomizing the solvent through an atomizing nozzle not only has a better atomization effect but is also easy to implement. BRIEF DESCRIPTION OF THE DRAWINGS

[0048] In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on the provided drawings without paying any creative work.

[0049] Figure 1A schematic diagram showing the steps of a method for preventing crystallization of a hot plate exhaust pipe of a glue coating and developing machine in an embodiment of the present specification is shown;

[0050] Figure 2 A schematic diagram of a step for determining the amount of solvent used in an embodiment of this specification is shown;

[0051] Figure 3 A schematic diagram of a step of atomizing a solvent in an embodiment of this specification is shown;

[0052] Figure 4 A schematic diagram of the structure of an exhaust pipe of a hot plate of a glue coating and developing machine according to an embodiment of the present specification is shown;

[0053] Figure 5 It shows a schematic diagram of the structure of another hot plate exhaust pipeline of a glue coating and developing machine in an embodiment of this specification;

[0054] Figure 6 A schematic diagram of the specific structure of an exhaust pipe of a hot plate of a glue coating and developing machine in an embodiment of the present specification is shown;

[0055] Figure 7 A schematic diagram of a hot plate temperature variation curve during a photoresist baking process in an embodiment of this specification is shown. DETAILED DESCRIPTION

[0056] In order to make the above-mentioned purposes, features and advantages of the present application more obvious and easy to understand, the specific implementation methods of the present application are described in detail below in conjunction with the accompanying drawings. In the following description, many specific details are set forth to facilitate a full understanding of the present application. However, the present application can be implemented in many other ways different from those described herein, and those skilled in the art can make similar improvements without violating the connotation of the present application, so the present application is not limited by the specific implementation disclosed below.

[0057] As described in the background technology, in the existing photoresist baking process, since the volatiles of the photoresist are difficult to be discharged from the hot plate exhaust pipe of the coating and developing machine in time, they are easy to crystallize and accumulate in the exhaust pipe, blocking the exhaust pipe, which is easy to cause defects in semiconductor devices. In addition, the labor cost and time cost of cleaning the exhaust pipe will be increased.

[0058] In view of the above problems, the embodiments of this specification provide a method for preventing crystallization of the hot plate exhaust pipe of the coating developer, by determining the amount of solvent suitable for dissolving the solute components separated from the photoresist, and atomizing the solvent to form a solvent spray, and then discharging the solvent spray into the exhaust pipe to dissolve the solute components separated from the photoresist, and discharging the mixture of the solvent spray and the solute components from the exhaust pipe, which can effectively promote the discharge of photoresist volatiles, thereby preventing the photoresist volatiles from crystallizing and accumulating in the exhaust pipe and blocking the exhaust pipe, thereby reducing the probability of defects in semiconductor devices. In addition, the labor cost and time cost of cleaning the exhaust pipe can also be reduced.

[0059] In order to enable those skilled in the art to better understand and implement the embodiments of this specification, the embodiments of this specification are described in detail below with reference to the accompanying drawings.

[0060] First, the embodiment of this specification provides a method for preventing crystallization of the hot plate exhaust pipe of the glue coating developer, referring to Figure 1 The schematic diagram of a method for preventing crystallization of a hot plate exhaust pipe of a glue coating developer is shown, and the following steps can be adopted:

[0061] Step A, determining the amount of a solvent suitable for dissolving the solute components separated from the photoresist.

[0062] Specifically, when the hot plate of the coating and developing machine heats the photoresist carried by the wafer, different components of the photoresist will separate, among which the solute component will be evaporated and then enter the hot plate exhaust pipe.

[0063] In a specific implementation, the type of the solvent can be determined according to the type of photoresist. The embodiments of this specification do not impose specific restrictions on the type of solvent. Those skilled in the art can select the solvent according to the type of photoresist, as long as the selected solvent is suitable for dissolving the solute components separated from the photoresist.

[0064] In some embodiments of the present specification, the amount of solvent used may be determined based on the amount of photoresist carried by the wafer.

[0065] In a specific implementation, the amount of solvent used can be determined according to the amount of photoresist carried by the wafer when it enters the hot plate of the coating and developing machine.

[0066] Step B, atomizing the solvent to form a solvent spray.

[0067] Step C, discharging the solvent spray into an exhaust line to dissolve the solute components separated from the photoresist, and discharging a mixture of the solvent spray and the solute components from the exhaust line.

[0068] In the existing hot plate exhaust pipeline, due to the low temperature of the hot plate exhaust pipeline, the evaporated solute components will condense when encountering the low temperature hot plate exhaust pipeline, and then precipitate crystals due to supersaturation, so they cannot be discharged from the hot plate exhaust pipeline of the coating developer in time. Therefore, in a specific implementation, by discharging the solvent spray into the exhaust pipeline to dissolve the solute components separated from the photoresist, and discharging the mixture of the solvent spray and the solute components from the exhaust pipeline, the discharge of the solute components separated from the photoresist can be effectively promoted.

[0069] By adopting the above embodiment, by determining the amount of solvent suitable for dissolving the solute components separated from the photoresist, and atomizing the solvent to form a solvent spray, and then discharging the solvent spray into the exhaust pipe to dissolve the solute components separated from the photoresist, and discharging the mixture of the solvent spray and the solute components from the exhaust pipe, the discharge of the photoresist volatiles can be effectively promoted, thereby preventing the photoresist volatiles from crystallizing and accumulating in the exhaust pipe and blocking the exhaust pipe, thereby reducing the probability of defects in semiconductor devices. In addition, the labor cost and time cost of cleaning the exhaust pipe can also be reduced.

[0070] In some embodiments of this specification, for step A, refer to Figure 2 A schematic diagram of the steps for determining the amount of solvent is shown, which can specifically be carried out in the following steps:

[0071] Step A1, determining the content of the solvent component of the photoresist.

[0072] In a specific implementation, since there are many types of photoresists and different types of photoresists have different component ratios, it is necessary to determine the content of the solvent component of the photoresist in order to accurately determine the amount of the solvent.

[0073] Step A2, determining the loss amount of the photoresist.

[0074] In a specific implementation, the photoresist usually has a certain degree of loss during use, so it is necessary to determine the amount of photoresist loss in order to accurately determine the amount of solvent used.

[0075] Step A3, determining the separation amount of the solute component of the photoresist.

[0076] In a specific implementation, since there are many types of photoresists and the separation conditions of the solute components of different types of photoresists are different, it is necessary to determine the separation amount of the solute components of the photoresist in order to accurately determine the amount of solvent used.

[0077] Step A4, determining the ratio of the solvent to the solute component.

[0078] In a specific implementation, the ratio of the solvent to the solute component is different, and the dissolution effect is also different, which in turn affects the discharge of photoresist volatiles. Therefore, it is necessary to determine the ratio of the solvent to the solute component to ensure that the solvent can fully dissolve the solute component separated from the photoresist, thereby further promoting the discharge of photoresist volatiles.

[0079] Step A5, determining the amount of solvent based on the content of the solvent component of the photoresist, the loss of the photoresist, the separation amount of the solute component of the photoresist, and the ratio of the solvent to the solute component.

[0080] In a specific implementation, based on the content of the solvent component of the photoresist, the loss of the photoresist and the separation amount of the solute component of the photoresist, the total amount of the solute component to be dissolved can be determined, and then based on the determined ratio of the solvent and the solute component, the amount of solvent used can be determined.

[0081] By adopting the above-mentioned embodiment, by determining the content of the solvent component of the photoresist, the loss of the photoresist, the separation amount of the solute component of the photoresist, and the ratio of the solvent to the solute component, and then based on the content of the solvent component of the photoresist, the loss of the photoresist, the separation amount of the solute component of the photoresist, and the ratio of the solvent to the solute component, the amount of solvent used can be objectively and accurately determined, thereby effectively promoting the discharge of photoresist volatiles, further preventing photoresist volatiles from crystallizing and accumulating in the exhaust line, blocking the exhaust line, and further reducing the probability of defects in semiconductor devices.

[0082] As an optional example, the ratio of the solvent to the solute component can be 1:1. By using this example, the solute component separated from the photoresist can be fully dissolved, thereby further promoting the discharge of photoresist volatiles, preventing photoresist volatiles from crystallizing and accumulating in the exhaust line and clogging the exhaust line, thereby further reducing the probability of defects in semiconductor devices.

[0083] It should be noted that the embodiments of this specification do not impose any specific restrictions on the ratio of the solvent and the solute component. The above example is only an optional example. The ratio of the solvent and the solute component can be adjusted according to the type of photoresist actually used to achieve a better dissolution effect.

[0084] As an optional example, for step B, refer to Figure 3 A schematic diagram of a step of atomizing a solvent is shown, and the specific steps may be as follows:

[0085] Step B1, introducing the solvent through a preset pipeline.

[0086] In a specific implementation, the size of the preset pipeline can be selected according to the amount of the solvent used.

[0087] Step B2, at the end of the preset pipeline, atomizing the solvent through an atomizing device to form a solvent spray.

[0088] By adopting the above embodiment, the solvent is introduced through a preset pipeline, and then atomized by an atomizing device at the end of the preset pipeline, which can not only form a solvent spray quickly and conveniently, but also prevent the solvent spray from overflowing.

[0089] In a specific implementation, when the wafer is just placed on the hot plate of the coating and developing machine, the hot plate will usually lose temperature, and then the coating and developing machine system will provide power compensation based on the set temperature to return the hot plate to the set temperature. As can be seen from the above, the temperature of the hot plate changes during the entire heating process, and different temperatures of the hot plate will result in different separation rates of the solute components of the photoresist. Therefore, by controlling the moment of discharging the solvent spray into the exhaust line, the degree to which the solute components separated from the photoresist are dissolved in the solvent spray can be controlled.

[0090] As an optional example, the solvent spray can be discharged into the exhaust pipe at a preset first moment, thereby further ensuring that the solute components separated from the photoresist are fully dissolved in the solvent spray, further promoting the discharge of photoresist volatiles, further preventing photoresist volatiles from crystallizing and accumulating in the exhaust pipe and clogging the exhaust pipe, thereby further reducing the probability of defects in semiconductor devices.

[0091] As another optional example, the solvent spray can be discharged into the exhaust pipe when the separation rate of the solute components of the photoresist reaches a preset threshold (that is, the moment when the separation rate of the solute components reaches the preset threshold is the preset first moment), which can further ensure that the solute components separated from the photoresist are fully dissolved in the solvent spray, thereby further promoting the discharge of photoresist volatiles, further preventing the photoresist volatiles from crystallizing and accumulating in the exhaust pipe and clogging the exhaust pipe, thereby further reducing the probability of defects in semiconductor devices.

[0092] In some embodiments of the present specification, the solvent spray can be discharged into the exhaust line at the moment when the separation rate of the solute components of the photoresist is the largest. At this time, the solvent spray can be fully utilized, thereby saving the amount of solvent.

[0093] In other embodiments of the present specification, a preset valve on the preset pipeline may be opened at a preset first moment to discharge the solvent spray into the exhaust pipeline.

[0094] By adopting the above embodiment, by opening the preset valve on the preset pipeline at a preset first moment and discharging the solvent spray into the exhaust pipeline, the discharge timing of the solvent spray can be accurately controlled, thereby saving the amount of solvent spray while ensuring that the solute components separated from the photoresist are fully dissolved in the solvent spray, thereby further promoting the discharge of photoresist volatiles, further preventing photoresist volatiles from crystallizing and accumulating in the exhaust pipeline and clogging the exhaust pipeline, and further reducing the probability of defects in semiconductor devices.

[0095] As an optional example, the solvent may be atomized through an atomizing nozzle, which not only has a better atomization effect but is also easy to implement.

[0096] For ease of implementation, the present specification also provides a hot plate exhaust pipe for a coating and developing machine, referring to Figure 4 The schematic diagram of the structure of the hot plate exhaust pipeline of a coating and developing machine is shown, and the exhaust pipeline P may include:

[0097] The first transfer pipe P1 is suitable for introducing a solvent, wherein the solvent is used to dissolve the solute components separated from the photoresist.

[0098] The atomizing device P2 is connected to the first transmission pipeline P1 and is suitable for atomizing the solvent to form a solvent spray.

[0099] The second transmission pipeline P3 is connected to the atomization device P2 and is suitable for discharging the mixture of the solvent spray and the solute components separated from the photoresist.

[0100] According to the above embodiment, a solvent for dissolving the solute components separated from the photoresist is introduced through the first transmission pipeline, and then the solvent is atomized by an atomizing device connected to the first transmission pipeline to form a solvent spray, and then the solvent spray is discharged to the second transmission pipeline, and mixed with the solute components separated from the photoresist in the second transmission pipeline, so that the mixture of the solvent spray and the solute components separated from the photoresist can be discharged from the second transmission pipeline in time, so as to avoid the solute components separated from the photoresist from clogging the second transmission pipeline, thereby reducing the probability of defects in semiconductor devices. In addition, the labor cost and time cost of cleaning the second transmission pipeline can also be reduced.

[0101] In some embodiments of this specification, reference is made to Figure 5 As shown in the structural schematic diagram of another hot plate exhaust pipeline of a coating and developing machine, the first transmission pipeline P1 may also include: a first valve P11, which is suitable for preventing the solvent from flowing back.

[0102] As an optional example, the first valve may be a one-way valve.

[0103] In other embodiments of this specification, continue to refer to Figure 5 The first transmission pipeline P1 may further include: a second valve P12, suitable for controlling the transmission of the solvent.

[0104] As an optional example, the second valve includes a solenoid valve.

[0105] As an alternative example, continue to refer to Figure 5 The exhaust pipe P may further include: a control device P4, adapted to control the second valve to open at a preset first moment.

[0106] In a specific implementation, when the wafer is just placed on the hot plate of the coating and developing machine, it usually causes the hot plate to lose temperature, and then the coating and developing machine system will provide power compensation based on the set temperature, so that the hot plate returns to the set temperature. As can be seen from the above, the temperature of the hot plate changes during the entire heating process, and the different temperatures of the hot plate will result in different separation rates of the solute components of the photoresist. Therefore, by controlling the second valve to open at the preset first moment through the control device, in other words, at the preset first moment, the solvent spray is discharged into the exhaust pipe, which can further ensure that the solute components separated from the photoresist are fully dissolved in the solvent spray, and further promote the mixture of the solvent spray and the solute components separated from the photoresist to be discharged from the second transmission pipeline, preventing the solute components separated from the photoresist from crystallizing and accumulating in the second transmission pipeline, blocking the second transmission pipeline, and thus further reducing the probability of defects in semiconductor devices.

[0107] As an optional example, the preset first moment may be: the moment when the separation rate of the solute component of the photoresist reaches a preset threshold.

[0108] In other embodiments of the present specification, the preset first moment may be the moment when the separation rate of the solute component of the photoresist is the largest, at which time the solvent spray can be fully utilized, thereby saving the amount of solvent.

[0109] The following describes in detail a method for preventing crystallization of a hot plate exhaust pipe of a photoresist developer and a process of baking photoresist using a hot plate exhaust pipe of a photoresist developer using the embodiment of the present specification through a specific example.

[0110] Reference Figure 6 A specific structural schematic diagram of an exhaust pipeline of a hot plate of a coating and developing machine is shown, wherein the exhaust pipeline Q comprises a first transmission pipeline P1, wherein a one-way valve Q11 and a solenoid valve Q12 are provided on the first transmission pipeline P1; an atomizing nozzle Q2 is connected to the end of the first transmission pipeline P1; and a second transmission pipeline P3 is connected to the atomizing nozzle Q2.

[0111] It should be noted that Figure 6The positions of the one-way valve and the solenoid valve shown are only exemplary. The embodiments of this specification do not specifically limit the positions of the one-way valve and the solenoid valve. The positions include both the specific positions of the one-way valve and the solenoid valve relative to the first transmission pipeline and the relative positions between the one-way valve and the solenoid valve. In other embodiments of this specification, the positions of the one-way valve and the solenoid valve can be swapped.

[0112] In a specific implementation, one end of the first transmission pipeline P1 can be connected to the solvent supply point, so that the solvent flows from the solvent supply point into the first transmission pipeline P1 (refer to Figure 6 curved arrow shown).

[0113] Further, the amount of solvent is determined. In this example, first, the content of the solvent component of the photoresist is determined to be 50%, the loss of the photoresist during use is 50%, and the separation amount of the solute component of the photoresist is 20%. Based on the determined content of the solvent component of the photoresist, the loss of the photoresist during use, and the separation amount of the solute component of the photoresist, the total amount of the solute component to be dissolved can be determined; secondly, the ratio of the solvent to the solute component is determined. In this embodiment, the solvent amount is determined based on the ratio of the solvent to the solute component being 1:1. Taking the capacity of a bottle of photoresist as 3.75L as an example, 3.75L of solvent is required for every 20 bottles of photoresist.

[0114] It should be noted that the data in the above examples are only illustrative and are not intended to be a specific limitation on the amount of solvent used.

[0115] Further, refer to Figure 7 The figure shows a schematic diagram of a temperature change curve of a hot plate during a photoresist baking process, wherein the horizontal axis (t) represents time and the vertical axis () represents temperature. Figure 6 and Figure 7 As shown, at the beginning of the photoresist baking process, that is, when the wafer is just placed on the hot plate of the coating and developing machine, the hot plate will lose temperature, and its temperature will drop from the set temperature value Y of the coating and developing machine system to G. The coating and developing machine system will provide power compensation based on the set temperature value Y, so that the hot plate returns from temperature G to the set temperature Y.

[0116] Furthermore, since the separation rate of the solute components of the photoresist is the largest when the temperature drops to G, the solvent spray can be fully utilized at this time. Therefore, the solenoid valve Q12 can be controlled to open at the moment corresponding to the temperature G to save the amount of solvent.

[0117] After the solenoid valve Q12 is opened, the solvent flows to the atomizing nozzle Q2, is atomized by the atomizing nozzle Q2, forms a solvent spray M1 and is discharged to the second transmission pipe P3. In the second transmission pipe P3, the solvent spray M1 is mixed with the solute component M2 volatilized from the photoresist to form a mixed gas M, and then the mixed gas M is discharged from the second transmission pipe P3 along the exhaust direction X (the direction indicated by the straight arrow in the figure), thereby effectively avoiding the solute component M2 separated from the photoresist from clogging the second transmission pipe P3, thereby reducing the probability of defects in semiconductor devices.

[0118] It should be noted that the terms "first", "second", etc. in the embodiments of this specification are only used to distinguish different transmission pipelines and valves, and are not used to make any limitations on their specific information or forms.

[0119] Although the embodiments of this specification are disclosed as above, the present invention is not limited thereto. Any person skilled in the art can make various changes and modifications without departing from the spirit and scope of the present invention, so the protection scope of the present invention shall be subject to the scope defined by the claims.

Claims

1. A method for preventing crystallization of a hot plate exhaust pipe of a glue coating and developing machine, characterized in that: include: determining an amount of a solvent suitable for dissolving the solute components separated from the photoresist; atomizing the solvent to form a solvent spray; The solvent spray is discharged to an exhaust line to dissolve the solute component separated from the photoresist, and a mixture of the solvent spray and the solute component is discharged from the exhaust line.

2. The method for preventing crystallization of the hot plate exhaust pipe of the glue coating and developing machine according to claim 1, characterized in that: The step of determining the amount of solvent comprises: The amount of solvent used is determined based on the amount of photoresist carried by the wafer.

3. The method for preventing crystallization of the hot plate exhaust pipe of the glue coating and developing machine according to claim 2, characterized in that: The step of determining the amount of solvent based on the amount of photoresist carried by the wafer includes: determining the content of the solvent component of the photoresist; Determining the amount of loss of the photoresist; determining a separation amount of a solute component of the photoresist; determining a ratio of the solvent and the solute component; The amount of the solvent is determined based on the content of the solvent component of the photoresist, the loss amount of the photoresist, the separation amount of the solute component of the photoresist, and the ratio of the solvent to the solute component.

4. The method for preventing crystallization of the hot plate exhaust pipe of the gumming and developing machine according to claim 3, characterized in that: The ratio of the solvent to the solute component is 1:

1.

5. The method for preventing crystallization of the hot plate exhaust pipe of the gumming and developing machine according to claim 1, characterized in that: The step of atomizing the solvent to form a solvent spray comprises: introducing the solvent through a preset pipeline; At the end of the preset pipeline, the solvent is atomized by an atomizing device to form a solvent spray.

6. The method for preventing crystallization of the hot plate exhaust pipe of the gumming and developing machine according to claim 5, characterized in that: The step of discharging the solvent spray into an exhaust pipe comprises: At a preset first time, the solvent spray is discharged into the exhaust line.

7. The method for preventing crystallization of the hot plate exhaust pipe of the gumming and developing machine according to claim 6, characterized in that: The preset first moment is: the moment when the separation rate of the solute component of the photoresist reaches a preset threshold.

8. The method for preventing crystallization of the hot plate exhaust pipe of the gumming and developing machine according to claim 6, characterized in that: The step of discharging the solvent spray into the exhaust pipe at a preset first moment includes: At a preset first moment, a preset valve on the preset pipeline is opened to discharge the solvent spray into the exhaust pipeline.

9. The method for preventing crystallization of the hot plate exhaust pipe of the gumming and developing machine according to claim 5, characterized in that: The atomizing device comprises: an atomizing nozzle.

10. A hot plate exhaust pipeline for a glue coating and developing machine, characterized in that: include: a first transmission channel, adapted to introduce a solvent, the solvent being used to dissolve the solute component separated from the photoresist; an atomizing device, connected to the first transmission pipeline, and adapted to atomize the solvent to form a solvent spray; The second transmission pipeline is connected to the atomizing device and is suitable for discharging the mixture of the solvent spray and the solute component separated from the photoresist.

11. The exhaust pipe according to claim 10, characterized in that The first transmission pipeline also includes: a first valve, adapted to prevent the solvent from flowing back.

12. The exhaust pipe according to claim 11, characterized in that The first valve includes a one-way valve.

13. The exhaust pipe according to claim 10, characterized in that The first transmission pipeline also includes: a second valve, suitable for controlling the transmission of the solvent.

14. The exhaust pipe according to claim 13, characterized in that The second valve includes a solenoid valve.

15. The exhaust pipe according to claim 10, characterized in that The atomizing device comprises an atomizing nozzle.

16. The exhaust pipe according to claim 10, characterized in that Also includes: The control device is adapted to control the second valve to open at a preset first moment.

17. The exhaust line according to claim 16, characterized in that The preset first moment is: the moment when the separation rate of the solute component of the photoresist reaches a preset threshold.

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