Gallium oxide crystal electrical property improvement method based on microdefect analysis

Abstract

The invention belongs to the technical field of gallium oxide crystals, and particularly relates to a gallium oxide crystal electrical property improving method based on microdefect analysis, which comprises the following specific steps: step 1, sample preparation: firstly, selecting or preparing a gallium oxide crystal sample to be analyzed, and ensuring that the surface of the sample is clean, flat and free of obvious macroscopic defects; according to the method, various defect types and distribution thereof in the gallium oxide crystal can be accurately identified and quantified through detailed microdefect analysis. Based on the analysis results, follow-up treatment schemes (such as annealing, doping, polishing, corrosion, ultraviolet irradiation and the like) are specifically formulated and implemented, and defects such as dislocation, lattice distortion, surface roughness and the like which are unfavorable for electrical properties can be effectively reduced or eliminated. The electrical performance indexes such as the electrical resistivity, the carrier concentration and the mobility of the gallium oxide crystal are remarkably improved through the treatment measures, and a reliable material basis is provided for preparing a high-performance gallium oxide-based electronic device.

Description

Technical Field

[0001] The present invention relates to the technical field of gallium oxide crystals, and in particular to a method for improving the electrical properties of gallium oxide crystals based on microscopic defect analysis. Background Art

[0002] With the rapid development of semiconductor technology, the demand for high-performance and high-stability semiconductor materials is increasing. As an emerging ultra-wide bandgap semiconductor material, gallium oxide has attracted much attention due to its excellent electrical properties, thermal stability and chemical stability. However, in practical applications, various microscopic defects often exist in gallium oxide crystals, such as dislocations, lattice distortions, oxygen vacancies, gallium vacancies, etc. These defects will seriously affect the electrical properties and stability of the crystals. In the traditional gallium oxide crystal growth and processing process, the identification and control of microscopic defects are relatively insufficient, resulting in a large number of defects in the crystal and uneven distribution. These defects will not only reduce the carrier concentration and mobility of the crystal, but also increase the resistivity and leakage current of the crystal, thereby limiting the application of gallium oxide materials in high-performance electronic devices. Summary of the invention

[0003] In order to solve the above problems, the present invention proposes a method for improving the electrical properties of gallium oxide crystals based on micro defect analysis, so as to more accurately solve the problems raised in the above background technology.

[0004] The present invention is achieved through the following technical solutions:

[0005] The present invention proposes a method for improving the electrical properties of gallium oxide crystals based on micro-defect analysis, comprising the following specific steps: Step 1: Sample preparation: First, select or prepare a gallium oxide crystal sample to be analyzed, ensure that the sample surface is clean, flat, and has no obvious macroscopic defects. According to experimental requirements, the sample can be a single crystal or a polycrystalline, and the size and shape must meet the requirements of subsequent analysis equipment; Step 2: Micro-defect identification: Use high-resolution microscopic imaging technology, such as high-resolution transmission electron microscopy (HRTEM) or scanning electron microscopy (SEM), to observe the microstructure of gallium oxide crystals, and by adjusting the magnification and imaging conditions of the microscope, clearly show the microstructural features inside the crystal, including but not limited to vacancies, interstitial atoms, lattice distortion, dislocation lines, dislocation rings, twin boundaries and other defect types. At the same time, combined with energy spectrum analysis (EDS) technology, the chemical composition changes in the defect area can be further analyzed; Step 3: Defect location and quantification: On the basis of identifying microscopic defects, use image analysis software to accurately locate the defects, and measure their size, shape, distribution density, etc. Quantitative parameters such as degree are important for understanding the impact of defects on the electrical properties of crystals. Step 4: Defect impact assessment: Based on the type, distribution and quantitative data of defects, combined with theoretical calculations and experimental data, the specific impact of these defects on the electrical properties of gallium oxide crystals (such as resistivity, carrier concentration, mobility, etc.) is assessed. This step requires comprehensive consideration of factors such as the energy level position, charge state, and scattering effect of the defects. Step 5: Formulate a treatment plan: Based on the results of the defect impact assessment, formulate a targeted follow-up treatment plan. The treatment plan aims to reduce or eliminate defects that are detrimental to electrical properties, while retaining or enhancing factors that are beneficial to electrical properties. The treatment plan may include annealing, doping modification, surface polishing, corrosion treatment, and other methods or their combination. Step 6: Implement treatment and verify the effect: Treat the gallium oxide crystal according to the formulated treatment plan, and verify the treatment effect through electrical performance tests (such as four-probe resistivity test, Hall effect test, etc.). If the treatment effect is not ideal, the treatment plan needs to be adjusted and re-verified until the expected electrical performance improvement goal is achieved.

[0006] Preferably, during the high-resolution transmission electron microscopy (HRTEM) analysis, a spherical aberration correction lens is used to improve the imaging resolution to ensure that sub-nanometer microscopic defects can be observed. At the same time, combined with the electron energy loss spectroscopy (EELS) technology, the electronic structure changes in the defect area can be further analyzed.

[0007] Preferably, the annealing treatment is carried out in a precisely temperature-controlled tubular furnace or a high-temperature furnace to ensure precise control of the annealing temperature, time and atmosphere. During the annealing process, oxygen, nitrogen or an inert gas may be introduced as a protective atmosphere to prevent unnecessary oxidation or corrosion of the crystal at high temperatures.

[0008] Preferably, the gallium oxide crystal is preheated before the annealing treatment to eliminate the temperature gradient stress inside the crystal and improve the annealing effect. The preheating temperature is usually 50% to 80% of the annealing temperature, and the preheating time ranges from 1 hour to several hours.

[0009] Preferably, the surface polishing process adopts chemical mechanical polishing (CMP) technology, combined with a special polishing liquid and a polishing pad, to perform high-precision polishing on the surface of the gallium oxide crystal. During the polishing process, by controlling parameters such as polishing pressure, rotation speed and polishing time, the surface roughness is significantly reduced and surface defects are effectively removed.

[0010] Preferably, the doping elements Sn and In are introduced into the gallium oxide crystal by techniques such as vapor phase transport, molecular beam epitaxy or ion implantation. During the doping process, the doping concentration, doping depth and doping uniformity are precisely controlled to ensure that the doping effect is optimal.

[0011] Preferably, the doping elements Sn and In are introduced into the gallium oxide crystal by techniques such as vapor phase transport, molecular beam epitaxy or ion implantation. During the doping process, the doping concentration, doping depth and doping uniformity are precisely controlled to ensure that the doping effect is optimal.

[0012] Preferably, when the optical floating zone method is used for growth, the growth conditions of the crystal are optimized by adjusting parameters such as the light source intensity, the temperature gradient of the melting zone, the growth rate and the rotation speed. At the same time, seed crystals are introduced to improve the crystallization quality and orientation of the crystal.

[0013] Preferably, the noble metal assisted corrosion uses noble metal particles such as platinum (Pt), gold (Au) or palladium (Pd) as catalysts. During the corrosion process, the corrosion rate and corrosion depth are precisely controlled by controlling parameters such as the concentration, temperature, pH value and corrosion time of the corrosion solution to reduce surface defects and improve the crystal surface morphology.

[0014] Preferably, before the etching treatment, the surface of the gallium oxide crystal is pretreated, such as cleaning, drying and sensitization treatment, to improve the adhesion and catalytic activity of the precious metal particles on the crystal surface. After the etching treatment, post-treatment is required, such as cleaning to remove residual etching solution and precious metal particles, and drying treatment.

[0015] Compared with the prior art, the present invention provides a method for improving the electrical properties of gallium oxide crystals based on microscopic defect analysis, which has the following beneficial effects:

[0016] This method for improving the electrical properties of gallium oxide crystals based on microscopic defect analysis can accurately identify and quantify various defect types and their distribution in gallium oxide crystals through detailed microscopic defect analysis. Based on these analysis results, targeted subsequent treatment plans (such as annealing, doping, polishing, corrosion and ultraviolet light irradiation, etc.) are formulated and implemented, which can effectively reduce or eliminate defects that are unfavorable to electrical properties, such as dislocations, lattice distortions and surface roughness. These treatment measures significantly improve the electrical performance indicators of gallium oxide crystals such as resistivity, carrier concentration and mobility, providing a reliable material basis for the preparation of high-performance gallium oxide-based electronic devices.

[0017] This method for improving the electrical properties of gallium oxide crystals based on microscopic defect analysis can accurately identify and quantify various defect types and their distribution in gallium oxide crystals through detailed microscopic defect analysis. Based on these analysis results, targeted subsequent treatment plans (such as annealing, doping, polishing, corrosion and ultraviolet light irradiation, etc.) are formulated and implemented to effectively reduce or eliminate defects that are detrimental to electrical properties, such as dislocations, lattice distortions and surface roughness. These treatment measures significantly improve the electrical performance indicators of gallium oxide crystals, such as resistivity, carrier concentration and mobility, and provide a reliable material basis for the preparation of high-performance gallium oxide-based electronic devices.

[0018] The method for improving the electrical properties of gallium oxide crystals based on microscopic defect analysis has broad application prospects in the fields of semiconductor devices, photodetectors, gas sensors, etc. due to the excellent electrical properties and chemical stability of gallium oxide materials. However, untreated gallium oxide crystals often have many defects and poor performance, which limits their performance in practical applications. Through the microscopic defect analysis method and subsequent treatment measures of the present invention, the electrical properties of gallium oxide crystals can be significantly improved and their crystal structure and surface morphology can be optimized, thereby broadening the application scope of gallium oxide materials and improving their market competitiveness. This will help promote the research and application progress of gallium oxide materials in related fields and promote the development and innovation of related industries. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] Figure 1 This is a schematic structural diagram of a method for improving the electrical properties of gallium oxide crystals based on micro-defect analysis proposed by the present invention. DETAILED DESCRIPTION

[0020] In order to more clearly and completely illustrate the technical solution of the present invention, the present invention is further described below in conjunction with the accompanying drawings.

[0021] Example

[0022] like Figure 1As shown, a method for improving the electrical properties of gallium oxide crystals based on micro defect analysis proposed in one embodiment of the present invention includes the following specific steps: Step 1: Sample preparation: First, select or prepare a gallium oxide crystal sample to be analyzed, ensure that the sample surface is clean and flat, and has no obvious macro defects. According to experimental requirements, the sample can be a single crystal or a polycrystalline, and the size and shape must meet the requirements of subsequent analysis equipment; Step 2: Micro defect identification: Use high-resolution microscopic imaging technology, such as high-resolution transmission electron microscopy (HRTEM) or scanning electron microscopy (SEM), to identify the defects of gallium oxide crystals. The microstructure of the crystal is observed by adjusting the magnification and imaging conditions of the microscope to clearly show the microstructural features inside the crystal, including but not limited to vacancies, interstitial atoms, lattice distortion, dislocation lines, dislocation rings, twin boundaries and other defect types. At the same time, combined with energy spectrum analysis (EDS) technology, the chemical composition changes in the defect area can be further analyzed; Step 3: Defect location and quantification: Based on the identification of microscopic defects, image analysis software is used to accurately locate the defects and measure their size, shape, distribution density and other quantitative parameters. This information is crucial to understanding the impact of defects on the electrical properties of the crystal. ; Step 4: Defect impact assessment: Based on the type, distribution and quantitative data of defects, combined with theoretical calculations and experimental data, evaluate the specific impact of these defects on the electrical properties of gallium oxide crystals (such as resistivity, carrier concentration, mobility, etc.); This step requires comprehensive consideration of factors such as the energy level position, charge state, and scattering effect of the defects; Step 5: Develop a treatment plan: Based on the results of the defect impact assessment, develop a targeted follow-up treatment plan. The treatment plan aims to reduce or eliminate defects that are unfavorable to electrical properties, while retaining or enhancing factors that are beneficial to electrical properties. The treatment plan may include annealing, doping modification, and other treatment methods. , surface polishing, corrosion treatment and other methods or their combination; Step 6: Implement treatment and verify the effect: treat the gallium oxide crystal according to the formulated treatment plan, and verify the treatment effect through electrical performance tests (such as four-probe resistivity test, Hall effect test, etc.). If the treatment effect is not ideal, it is necessary to adjust the treatment plan and re-verify until the expected electrical performance improvement goal is achieved. In the present invention, first, a gallium oxide (Ga2O3) single crystal sample with a size of 10mm×10mm×1mm is purchased from a supplier or prepared by chemical vapor deposition (CVD) and other methods. The sample surface is cleaned in turn with acetone, ethanol and deionized water to remove oil and impurities on the surface to ensure that the sample surface is clean and pollution-free. Subsequently, the sample is placed in a drying oven for drying and standby use, and the prepared gallium oxide crystal sample is observed for microstructure using laboratory equipment equipped with a high-resolution transmission electron microscope (HRTEM). The magnification of the HRTEM is adjusted to more than one million times to clearly observe the microstructural features inside the crystal. By adjusting imaging conditions, such as the electron beam acceleration voltage and beam current density, the image quality is optimized.During the observation process, the focus was on defect types such as vacancies, interstitial atoms, lattice distortion, dislocation lines, dislocation rings, and twin boundaries in the crystal. At the same time, the chemical composition of the defect area was quantitatively analyzed in combination with energy dispersive spectroscopy (EDS) technology, and the identified microscopic defects were accurately located in the HRTEM image using image analysis software. A detailed map of the defects was established by measuring quantitative parameters such as the size, shape, and distribution density of the defects. These quantitative data will be used to subsequently evaluate the specific effects of the defects on the electrical properties of the crystal. Based on the type, distribution, and quantitative data of the defects, combined with existing theoretical calculations and experimental data, the effects of these defects on the electrical properties of gallium oxide crystals (such as resistivity, carrier concentration, and mobility) were evaluated. In particular, for defect types such as dislocations and twins that significantly affect carrier transport, a focused analysis was conducted, and targeted follow-up treatment plans were formulated based on the results of the defect impact assessment. For example, for areas with high dislocation density, annealing treatment is considered to reduce the number of dislocations; for samples with large surface roughness, surface polishing treatment is used to improve the surface morphology. In this embodiment, annealing is selected as the main subsequent treatment method, and the gallium oxide crystal sample is placed in a precisely temperature-controlled tubular furnace, and high-purity oxygen is introduced as a protective atmosphere. The annealing temperature is set to 1200°C and the annealing time is 24 hours. During the annealing process, the temperature in the furnace is kept stable, and the temperature data is recorded regularly to ensure the accuracy of the annealing temperature. After the annealing is completed, the furnace source is turned off and the sample is allowed to cool naturally to room temperature, and the electrical properties of the gallium oxide crystal sample after annealing are tested. The resistivity change of the sample is measured using a four-probe resistivity tester; and parameters such as carrier concentration and mobility are measured using a Hall effect tester. The test results are compared with the data before annealing to verify the effect of annealing on the improvement of the electrical properties of the gallium oxide crystal. The surface polishing treatment adopts chemical mechanical polishing (CMP) technology, combined with a special polishing liquid and polishing pad, to perform high-precision polishing on the surface of the gallium oxide crystal. During the polishing process, the surface roughness is significantly reduced and the surface defects are effectively removed by controlling parameters such as polishing pressure, rotation speed and polishing time.

[0023] In which, during the high-resolution transmission electron microscope (HRTEM) analysis, a spherical aberration correction lens is used to improve the imaging resolution to ensure that sub-nanometer-level microscopic defects can be observed. At the same time, combined with the electron energy loss spectrum (EELS) technology, the electronic structure changes in the defect area can be further analyzed. The annealing treatment is carried out in a precisely temperature-controlled tubular furnace or a high-temperature furnace to ensure precise control of the annealing temperature, time and atmosphere. During the annealing process, oxygen, nitrogen or inert gas can be introduced as a protective atmosphere to prevent unnecessary oxidation or corrosion of the crystal at high temperature. Before the annealing treatment, the gallium oxide crystal is preheated to eliminate the temperature gradient stress inside the crystal and improve the annealing effect. The preheating temperature is usually 50% to 80% of the annealing temperature, and the preheating time ranges from 1 hour to several hours.

[0024] In the present invention, in addition to the basic magnification and imaging condition adjustment in HRTEM analysis, a spherical aberration correction lens is introduced to improve the imaging resolution to the sub-angstrom level. At the same time, the electron energy loss spectrum (EELS) technology is used to conduct an in-depth analysis of the electronic structure of a specific defect area. Through the EELS spectrum, the electronic state density distribution information around the defect can be obtained, and the influence mechanism of the defect on the electrical properties of the crystal can be further revealed. The annealing treatment is carried out in a precisely temperature-controlled tubular furnace, and the temperature fluctuation in the furnace is controlled within ±1°C. Before annealing, the sample is preheated at a temperature of 600°C (about half of the annealing temperature) and a preheating time of 2 hours to eliminate the temperature gradient stress inside the crystal. During the annealing process, high-purity oxygen is introduced as a protective atmosphere, and the flow rate is controlled within an appropriate range to ensure uniform oxygen distribution. After the annealing is completed, the sample is slowly cooled to room temperature using a programmed cooling method to avoid thermal stress caused by rapid cooling, and the surface of the gallium oxide crystal is polished with high precision using chemical mechanical polishing (CMP) technology. Use special polishing liquid and polishing pad, and adjust polishing pressure, speed, polishing time and other parameters to achieve a significant reduction in surface roughness. During the polishing process, regularly test the surface roughness and adjust the polishing parameters according to the test results. After polishing, use deionized water to clean the sample surface and place it in a drying oven for drying.

[0025] The doping elements Sn and In are introduced into the gallium oxide crystal by techniques such as vapor phase transport, molecular beam epitaxy or ion implantation. During the doping process, the doping concentration, doping depth and doping uniformity are precisely controlled to ensure that the doping effect is optimal. The doping elements Sn and In are introduced into the gallium oxide crystal by techniques such as vapor phase transport, molecular beam epitaxy or ion implantation. During the doping process, the doping concentration, doping depth and doping uniformity are precisely controlled to ensure that the doping effect is optimal.

[0026] In the present invention, Sn and In are selected as doping elements, and the doping elements are introduced into the gallium oxide crystal by molecular beam epitaxy (MBE). In the MBE system, the evaporation rate and beam intensity of the doping source are precisely controlled to ensure the uniformity and accuracy of the doping concentration. At the same time, the structure and performance of the doping layer are optimized by adjusting parameters such as the growth temperature and the growth rate. After the doping is completed, the sample is annealed to activate the doping elements and improve their distribution state, and the co-doped gallium oxide crystal is grown by the optical floating zone method. During the growth process, the growth conditions of the crystal are optimized by adjusting parameters such as the light source intensity, the temperature gradient of the melting zone, the growth rate and the rotation speed. At the same time, high-quality seed crystals are introduced to improve the crystallization quality and orientation of the crystal. After the growth is completed, the crystal is cut, polished and other subsequent treatments are performed to prepare a sample of the desired size.

[0027] Among them, when the optical floating zone method is used for growth, the growth conditions of the crystal are optimized by adjusting parameters such as the light source intensity, the temperature gradient of the melting zone, the growth rate and the rotation speed. At the same time, seed crystals are introduced to improve the crystallization quality and orientation of the crystal. The noble metal assisted corrosion uses noble metal particles such as platinum (Pt), gold (Au) or palladium (Pd) as catalysts. During the corrosion process, the corrosion rate and corrosion depth are accurately controlled by controlling parameters such as the concentration, temperature, pH value and corrosion time of the corrosion solution to reduce surface defects and improve the surface morphology of the crystal. Before the corrosion treatment, the surface of the gallium oxide crystal is pretreated, such as cleaning, drying and sensitization treatment, to improve the adhesion and catalytic activity of the noble metal particles on the crystal surface. After the corrosion treatment, post-treatment is required, such as cleaning to remove residual corrosion solution and noble metal particles, and drying treatment.

[0028] In the present invention, before the corrosion treatment, the surface of the gallium oxide crystal is pretreated, including steps such as cleaning, drying and sensitization treatment. Then, a layer of precious metal particles (such as Pt particles) is evenly coated on the surface of the crystal as a catalyst. Subsequently, the sample is placed in a corrosion solution (such as a mixed solution containing hydrofluoric acid, an oxidant and a surfactant) and subjected to corrosion treatment at room temperature. By controlling parameters such as the concentration, temperature, pH value and corrosion time of the corrosion solution, the corrosion rate and corrosion depth are accurately controlled. After the corrosion is completed, the sample surface is cleaned with deionized water to remove the residual precious metal particles and the corrosion solution, and the surface of the gallium oxide crystal is illuminated by an ultraviolet LED light source. By adjusting the wavelength (such as 365nm), power density and irradiation time of the light source, the illumination conditions are optimized to excite electrons and hole pairs on the crystal surface. During the illumination process, an appropriate distance between the sample and the light source is maintained to ensure the uniformity of the illumination. After the irradiation, the electrical performance of the samples was tested to verify the effect of UV irradiation on the improvement of the electrical performance of the crystal. The electrical performance of the gallium oxide crystal samples that had undergone the above-mentioned various treatments (such as annealing, polishing, doping, corrosion and UV irradiation) was tested. The treatment effect was verified by comparing the changes in parameters such as resistivity, carrier concentration and mobility before and after treatment. At the same time, the contribution of various treatment methods to the improvement of crystal electrical performance and their interaction mechanism were discussed in combination with theoretical analysis.

[0029] Finally, it should be noted that the basic concepts have been described above. Obviously, for those skilled in the art, the above detailed disclosure is only an example and does not constitute a limitation of this specification. Although it is not explicitly stated here, those skilled in the art may make various modifications, improvements and corrections to this specification. Such modifications, improvements and corrections are suggested in this specification, so such modifications, improvements and corrections still belong to the spirit and scope of the exemplary embodiments of this specification. At the same time, this specification uses specific words to describe the embodiments of this specification. For example, "one embodiment", "one embodiment", and / or "some embodiments" refer to a certain feature, structure or characteristic related to at least one embodiment of this specification. Therefore, it should be emphasized and noted that "one embodiment" or "one embodiment" or "an alternative embodiment" mentioned twice or more in different positions in this specification does not necessarily refer to the same embodiment. In addition, certain features, structures or characteristics in one or more embodiments of this specification can be appropriately combined. In addition, unless explicitly stated in the claims, the order of processing elements and sequences described in this specification, the use of alphanumeric characters, or the use of other names are not used to limit the order of the processes and methods of this specification.

[0030] Finally, it should be noted that the above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art can still modify the technical solutions described in the aforementioned embodiments or replace some of the technical features therein by equivalents. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention shall be included in the protection scope of the present invention.

Claims

1. A method for improving the electrical properties of gallium oxide crystals based on microscopic defect analysis. comprising, characterized in that, The method comprises the following specific steps: Step 1: Sample preparation: First, select or prepare the gallium oxide crystal sample to be analyzed, and ensure that the sample surface is clean, flat, and has no obvious macroscopic defects. According to the experimental requirements, the sample can be single crystal or polycrystalline, and the size and shape must meet the requirements of the subsequent analysis equipment; Step 2: Identification of microscopic defects: Use high-resolution microscopic imaging technology, such as high-resolution transmission electron microscopy (HRTEM) or scanning electron microscopy (SEM), to observe the microstructure of gallium oxide crystals. By adjusting the magnification and imaging conditions of the microscope, the microscopic structural characteristics inside the crystal can be clearly displayed, including but not limited to vacancies, interstitial atoms, lattice distortion, dislocation lines, dislocation rings, twin boundaries and other defect types. At the same time, combined with energy dispersive spectroscopy (EDS) technology, the chemical composition changes in the defect area can be further analyzed; Step 3: Defect location and quantification: After identifying microscopic defects, use image analysis software to accurately locate the defects and measure quantitative parameters such as size, shape, and distribution density. This information is crucial for understanding the impact of defects on the electrical properties of the crystal. Step 4: Defect impact assessment: Based on the type, distribution and quantitative data of defects, combined with theoretical calculations and experimental data, evaluate the specific impact of these defects on the electrical properties of gallium oxide crystals (such as resistivity, carrier concentration, mobility, etc.). This step requires comprehensive consideration of factors such as the energy level position, charge state, and scattering effect of the defects; Step 5: Develop a treatment plan: Based on the results of the defect impact assessment, develop a targeted follow-up treatment plan. The treatment plan aims to reduce or eliminate defects that are detrimental to electrical performance, while retaining or enhancing factors that are beneficial to electrical performance. The treatment plan may include annealing, doping modification, surface polishing, corrosion treatment and other methods or a combination thereof; Step 6: Implement treatment and verify the effect: Treat the gallium oxide crystal according to the formulated treatment plan, and verify the treatment effect through electrical performance tests (such as four-probe resistivity test, Hall effect test, etc.). If the treatment effect is not ideal, the treatment plan needs to be adjusted and re-verified until the expected electrical performance improvement goal is achieved.

2. The method for improving the electrical properties of gallium oxide crystals based on microscopic defect analysis according to claim 1, characterized in that: During the high-resolution transmission electron microscopy (HRTEM) analysis, a spherical aberration correction lens is used to improve the imaging resolution to ensure that sub-nanometer microscopic defects can be observed. At the same time, combined with the electron energy loss spectroscopy (EELS) technology, the electronic structure changes in the defect area can be further analyzed.

3. The method for improving the electrical properties of gallium oxide crystals based on microscopic defect analysis according to claim 1, characterized in that: The annealing treatment is carried out in a precisely temperature-controlled tubular furnace or a high-temperature furnace to ensure accurate control of the annealing temperature, time and atmosphere. During the annealing process, oxygen, nitrogen or an inert gas may be introduced as a protective atmosphere to prevent unnecessary oxidation or corrosion of the crystal at high temperatures.

4. The method for improving the electrical properties of gallium oxide crystals based on microscopic defect analysis according to claim 3 is characterized in that: Before annealing, the gallium oxide crystal is preheated to eliminate the temperature gradient stress inside the crystal and improve the annealing effect. The preheating temperature is usually 50% to 80% of the annealing temperature, and the preheating time ranges from 1 hour to several hours.

5. The method for improving the electrical properties of gallium oxide crystals based on microscopic defect analysis according to claim 1, characterized in that: The surface polishing process adopts chemical mechanical polishing (CMP) technology, combined with special polishing liquid and polishing pad, to perform high-precision polishing on the surface of gallium oxide crystal. During the polishing process, by controlling parameters such as polishing pressure, rotation speed and polishing time, the surface roughness is significantly reduced and surface defects are effectively removed.

6. The method for improving the electrical properties of gallium oxide crystals based on microscopic defect analysis according to claim 1, characterized in that: The doping elements Sn and In are introduced into the gallium oxide crystal by techniques such as gas phase transport, molecular beam epitaxy or ion implantation. During the doping process, the doping concentration, doping depth and doping uniformity are precisely controlled to ensure that the doping effect is optimal.

7. The method for improving the electrical properties of gallium oxide crystals based on microscopic defect analysis according to claim 6, characterized in that: The doping elements Sn and In are introduced into the gallium oxide crystal by techniques such as gas phase transport, molecular beam epitaxy or ion implantation. During the doping process, the doping concentration, doping depth and doping uniformity are precisely controlled to ensure that the doping effect is optimal.

8. The method for improving the electrical properties of gallium oxide crystals based on microscopic defect analysis according to claim 1, characterized in that: When using the optical floating zone method for growth, the growth conditions of the crystal are optimized by adjusting parameters such as the light source intensity, the temperature gradient of the melting zone, the growth rate and the rotation speed. At the same time, seed crystals are introduced to improve the crystallization quality and orientation of the crystal.

9. The method for improving the electrical properties of gallium oxide crystals based on microscopic defect analysis according to claim 1, characterized in that: The noble metal assisted corrosion uses noble metal particles such as platinum (Pt), gold (Au) or palladium (Pd) as catalysts. During the corrosion process, the corrosion rate and corrosion depth are precisely controlled by controlling parameters such as the concentration, temperature, pH value and corrosion time of the corrosion solution to reduce surface defects and improve the crystal surface morphology.

10. The method for improving the electrical properties of gallium oxide crystals based on microscopic defect analysis according to claim 9, characterized in that: Before the corrosion treatment, the surface of the gallium oxide crystal is pretreated, such as cleaning, drying and sensitization treatment, to improve the adhesion and catalytic activity of the precious metal particles on the crystal surface. After the corrosion treatment, post-treatment is required, such as cleaning to remove residual corrosion liquid and precious metal particles, and drying treatment.

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