Silicon wafer cleaning equipment and control method and control module thereof

Abstract

The invention provides silicon wafer cleaning equipment and a control method and a control module thereof, and the method comprises the steps: receiving corresponding monitoring data of the silicon wafer cleaning equipment, the monitoring data comprising one or more of the exhaust air speed, the air direction and the fan air speed in the silicon wafer cleaning equipment; based on the monitoring data, corresponding treatment is conducted on control parameters of the silicon wafer cleaning equipment till one or more of the air inlet amount, the air outlet amount and the air direction of the silicon wafer cleaning equipment are within the corresponding target numerical value range; the control parameters comprise one or more of the air exhaust opening degree, the fan opening degree and the fan frequency. The stability of the wind speed and the wind direction in the silicon wafer cleaning process can be kept, the problems of chemical volatile matter diffusion and residue caused by air flow fluctuation in equipment are effectively solved, and therefore the influence of the chemical volatile matter on the cleanliness and the machining quality of the surface of the silicon wafer is reduced.

Description

Technical Field

[0001] The present application relates to the field of surface contamination control technology, and in particular to silicon wafer cleaning equipment and a control method and a control module thereof. Background Art

[0002] In the semiconductor manufacturing process, silicon wafer cleaning is a key link to ensure the cleanliness of the silicon wafer surface and reduce surface contamination. The adjustment operation of related silicon wafer cleaning equipment is cumbersome, and the effect after adjustment is difficult to quantify, and it is not easy to achieve accurate control of the wind direction and wind speed inside the equipment. With the continuous improvement of the precision requirements of semiconductor manufacturing, silicon wafer cleaning equipment has higher and higher requirements for the accuracy and stability of airflow control in the process of handling chemicals. If the exhaust or air intake in the equipment is unstable, it is easy for chemical volatiles to remain on the surface of the silicon wafer or equipment, and may even spread to the clean room, affecting product quality.

[0003] Based on this, the present application provides silicon wafer cleaning equipment and its control method and control module to improve the relevant technology. Summary of the invention

[0004] The purpose of the present application is to provide silicon wafer cleaning equipment and its control method and control module, so as to control one or more of the air inlet volume, air outlet volume and wind direction of the silicon wafer cleaning equipment within the corresponding target value range, thereby reducing the impact on product quality.

[0005] The purpose of this application is achieved by the following technical solutions:

[0006] In the first aspect, the present application provides a control method for silicon wafer cleaning equipment, the method comprising: receiving corresponding monitoring data of the silicon wafer cleaning equipment, the monitoring data comprising one or more of exhaust wind speed, wind direction and fan wind speed inside the silicon wafer cleaning equipment; based on the monitoring data, performing corresponding manipulation on the control parameters of the silicon wafer cleaning equipment until one or more of the air intake, air outlet and wind direction of the silicon wafer cleaning equipment is within the corresponding target numerical range; the control parameters comprise one or more of exhaust opening, fan opening and fan frequency.

[0007] In some embodiments, the method further includes: receiving target setting information, wherein the target setting information is used to determine one or more corresponding target value ranges of air inlet volume, air outlet volume and wind direction of the silicon wafer cleaning equipment.

[0008] In some embodiments, based on the monitoring data, the control parameters of the silicon wafer cleaning equipment are processed accordingly, including: visual processing of the monitoring data to obtain corresponding visualization information; the visualization information is in one or more formats of text, visualization graphics and visualization tables; in response to a manual adjustment operation on the control parameters, a first control instruction corresponding to the manual adjustment operation is generated, and the first control instruction is used to configure the control parameters of the silicon wafer cleaning equipment.

[0009] In some embodiments, based on the monitoring data, the control parameters of the silicon wafer cleaning equipment are handled accordingly, including: according to the monitoring data, taking one or more corresponding target numerical ranges of the air intake, air outlet and wind direction of the silicon wafer cleaning equipment as automatic control targets, generating a second control instruction, wherein the second control instruction is used to automatically compensate for the control parameters of the silicon wafer cleaning equipment.

[0010] In some embodiments, the control parameters include the exhaust air opening and the fan opening, and the treatment includes proportional adjustment of the exhaust air opening and the fan opening.

[0011] In a second aspect, the present application provides a control module for a silicon wafer cleaning device, wherein the control module is used to execute any of the above methods.

[0012] In the third aspect, the present application provides a silicon wafer cleaning device, which includes: a monitoring module for monitoring the silicon wafer cleaning device to obtain corresponding monitoring data, wherein the monitoring data includes one or more of the exhaust wind speed, wind direction and fan wind speed inside the silicon wafer cleaning device; a control module for receiving the corresponding monitoring data of the silicon wafer cleaning device; based on the monitoring data, performing corresponding processing on the control parameters of the silicon wafer cleaning device until one or more of the air intake, air outlet and wind direction of the silicon wafer cleaning device is within the corresponding target numerical range; the control parameters include one or more of the exhaust opening, fan opening and fan frequency.

[0013] In some embodiments, the silicon wafer cleaning equipment also includes a visualization module and an interaction module; the control module is used to perform corresponding processing on the control parameters of the silicon wafer cleaning equipment in the following manner: visual processing of the monitoring data to obtain corresponding visualization information; the visualization information is in one or more formats of text, visualization graphics and visualization tables; in response to a manual adjustment operation on the control parameter, a first control instruction corresponding to the manual adjustment operation is generated, and the first control instruction is used to configure the control parameters of the silicon wafer cleaning equipment; the visualization module is used to receive and display the visualization information; the interaction module is used to receive a manual adjustment operation on the control parameter.

[0014] In some embodiments, the control module is used to perform corresponding operations on the control parameters of the silicon wafer cleaning equipment in the following manner: based on the monitoring data, one or more corresponding target numerical ranges of the air intake, air outlet and wind direction of the silicon wafer cleaning equipment are used as automatic control targets to generate a second control instruction, and the second control instruction is used to automatically compensate for the control parameters of the silicon wafer cleaning equipment.

[0015] In some embodiments, a fan is provided on the top of the silicon wafer cleaning equipment, and the interior of the silicon wafer cleaning equipment is provided with: a relative silicon wafer loading end and a silicon wafer unloading end, which are respectively used to load and unload silicon wafers; a robotic arm for carrying the silicon wafers, including a robotic arm body, a walking axis and a front-end silicon wafer grabbing arm; a silicon wafer processing module, including one or more of a silicon wafer hydrofluoric acid processing unit, a silicon wafer ammonia hydrogen peroxide processing unit, a silicon wafer hydrochloric acid hydrogen peroxide processing unit and a silicon wafer drying unit; a plurality of silicon wafer processing troughs, which are spaced apart on the silicon wafer processing module, and the silicon wafer processing troughs are used to connect to the silicon wafer processing module so that the silicon wafer processing module processes the silicon wafers in the silicon wafer processing troughs; piping, located below the plurality of silicon wafer processing troughs, and the piping is used to connect to the silicon wafer processing module so that the silicon wafer processing module processes the silicon wafers generated liquid flows out from the piping; at least one exhaust pipe grille is arranged near the multiple silicon wafer processing tanks, so that the first gas generated by the silicon wafer processing module when processing the silicon wafer is discharged under the guidance of the exhaust pipe grille; at least one first exhaust channel is located below the exhaust pipe grille, used to discharge the first gas generated by processing the silicon wafer; at least one second exhaust channel is arranged near the lower end of the robotic arm, used to discharge the second gas at the position where the robotic arm is located; the monitoring module includes multiple wind speed detection instruments, at least one of the wind speed detection instruments is arranged near the top to detect the wind speed of the fan, at least one of the wind speed detection instruments is located in the first exhaust channel to detect the exhaust wind speed of the first gas, and at least one of the wind speed detection instruments is located in the second exhaust channel to detect the exhaust wind speed of the second gas.

[0016] The present application provides a silicon wafer cleaning device and a control method and a control module thereof, which receives monitoring data inside the cleaning device, including exhaust wind speed, wind direction and fan wind speed, to monitor the wind direction and wind speed of the airflow inside the device. Next, the control parameters of the cleaning device (such as exhaust air opening, fan opening and fan frequency) are adjusted based on the monitoring data to ensure that the air intake, air outlet and wind direction inside the device are always maintained within the set target value range. The present application can maintain the stability of wind speed and wind direction during the silicon wafer cleaning process, effectively reducing the diffusion and residual problems of chemical volatiles caused by air flow fluctuations inside the equipment, thereby reducing its impact on the cleanliness and processing quality of the silicon wafer surface. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] The present application is further described below in conjunction with the accompanying drawings and specific implementation methods.

[0018] Figure 1 It is a flow chart of a control method for silicon wafer cleaning equipment provided in an embodiment of the present application.

[0019] Figure 2 It is a structural schematic diagram (front view) of a silicon wafer cleaning device provided in an embodiment of the present application.

[0020] Figure 3 It is a cross-sectional view (side view) of a silicon wafer cleaning device provided in an embodiment of the present application.

[0021] Figure 4 It is a control flow diagram of a silicon wafer cleaning device provided in an embodiment of the present application.

[0022] In the figure: 101, product loading end; 102, fan and filter; 103, wind speed detection instrument; 104, inward wind direction arrow; 105, silicon wafer loading end; 106, silicon wafer processing tank; 107, silicon wafer hydrofluoric acid processing unit; 108, silicon wafer ammonia hydrogen peroxide processing unit; 109, silicon wafer hydrochloric acid hydrogen peroxide processing unit; 110, silicon wafer drying unit; 111, piping; 112, silicon wafer unloading end; 201, silicon wafer and silicon wafer support frame; 202, downward wind direction arrow; 203, robot arm body; 204, walking axis; 205, second exhaust channel; 206, first exhaust channel; 207, exhaust pipe grille; 208, front end silicon wafer grabbing arm. DETAILED DESCRIPTION

[0023] The following will be combined with the drawings in this application to clearly and completely describe the technical solutions in the implementation mode of this application. Obviously, the described implementation mode is only a part of the implementation mode of this application, not all the implementation modes. Based on the implementation mode in this application, all other implementation modes obtained by those skilled in the art without creative work are within the scope of protection of this application.

[0024] In the description of the embodiments of the present application, it should be understood that the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, features defined as "first" and "second" may explicitly or implicitly include one or more of the features. In the description of the embodiments of the present application, the meaning of "multiple" is two or more, unless otherwise clearly and specifically defined.

[0025] At present, the wind direction and wind speed control inside semiconductor cleaning equipment (referred to as cleaning equipment, or equipment) mostly rely on manually adjusting the opening of the exhaust valve and the frequency of the fan on the top of the equipment to increase or decrease the exhaust air volume and the intake air volume. The manual adjustment steps are cumbersome and the effect of the adjustment is difficult to judge and quantify. In addition, there may be unstable exhaust or intake air in the later stage of the adjustment, which requires manual monitoring and repeated adjustments. In addition, many cleaning equipment do not have the above adjustment function, so it is difficult to monitor and adjust the wind direction and exhaust conditions inside the cleaning equipment.

[0026] When the wind direction and exhaust inside the cleaning equipment are difficult to monitor and control effectively, the volatiles of the chemicals used inside the equipment are difficult to be discharged in time during long-term use due to the fluctuation of exhaust pressure or the fluctuation of the air intake volume of the fan on the top of the equipment, which will eventually cause these volatiles to be adsorbed on the surface of the silicon wafer or on the surface inside the equipment, or discharged to the environment outside the equipment, causing pollution to the clean room environment. Therefore, defective products will be produced during the processing of silicon wafers. In the long run, the pollution inside the equipment will lead to batch defects of products. At the same time, it is difficult to detect and improve such defects in time.

[0027] This application conducts visual monitoring of the exhaust wind speed, top fan wind speed and wind direction inside the equipment, monitors and automatically adjusts the relevant control parameters of exhaust or air intake, so as to improve the disadvantages caused by the above description. The above content takes the top fan as an example, but this application does not limit the position of the fan, and the fan can be located at the top of the cleaning equipment or outside the top.

[0028] See also Figure 1 , Figure 1 It is a flow chart of a control method for silicon wafer cleaning equipment provided in an embodiment of the present application.

[0029] An embodiment of the present application provides a control method for silicon wafer cleaning equipment, the method comprising steps S101 to S102.

[0030] Step S101: receiving corresponding monitoring data of the silicon wafer cleaning equipment, wherein the monitoring data includes one or more of exhaust wind speed, wind direction and fan wind speed inside the silicon wafer cleaning equipment.

[0031] Step S102: Based on the monitoring data, control parameters of the silicon wafer cleaning equipment are processed accordingly until one or more of the air intake, air outlet and wind direction of the silicon wafer cleaning equipment is within a corresponding target value range; the control parameters include one or more of the exhaust opening, fan opening and fan frequency.

[0032] The exhaust opening refers to the opening of the exhaust valve. When the silicon wafer cleaning equipment is provided with multiple exhaust valves, the exhaust openings of different exhaust valves may be the same or different. In this article, the air volume is the exhaust volume, and the air inlet and outlet volume includes the air inlet and the air outlet.

[0033] In some embodiments, the above method may be executed on a control module of a silicon wafer cleaning device.

[0034] In the above embodiment, the target numerical range corresponding to the air intake volume is, for example, the target air intake volume numerical range, the target numerical range corresponding to the air outlet volume is, for example, the target air outlet volume numerical range, and the target numerical range corresponding to the wind direction is, for example, the target wind direction numerical range. In practical applications, the air intake volume, the air outlet volume, and the wind direction may be controlled to specific values, or the air intake volume, the air outlet volume, and the wind direction may be stabilized within a certain numerical range, and the above embodiment does not limit this.

[0035] See also Figure 2 and Figure 3 , Figure 2 1 is a schematic diagram (front view) of the structure of a silicon wafer cleaning device provided in an embodiment of the present application. Figure 3 It is a cross-sectional view (side view) of a silicon wafer cleaning device provided by an embodiment of the present application. In the figure, the inward wind direction arrow 104 is used to indicate that there is no left or right wind direction (the left and right wind pressures are the same), and the downward wind direction arrow 202 is used to indicate that the wind direction inside the device is downward.

[0036] As an example, a fan and a filter 102 may be provided on the top of the silicon wafer cleaning device, and the filter is used to filter the gas provided by the fan. The interior of the silicon wafer cleaning device may be provided with a silicon wafer loading end 105, a silicon wafer unloading end 112, a robotic arm, a silicon wafer processing module, a plurality of silicon wafer processing tanks 106, a pipe 111, at least one exhaust pipeline grille 207 (for example, 2), at least one first exhaust channel 206 (for example, 2), at least one second exhaust channel 205 (for example, 2), a fan and a monitoring module. The silicon wafer loading end 105 and the silicon wafer unloading end 112 are opposite to each other, and the two are used to load and unload silicon wafers respectively. A product loading end 101 close to the silicon wafer loading end 105 may also be provided on the outside of the silicon wafer cleaning device. The robotic arm is used to carry silicon wafers, and the robotic arm includes a robotic arm body 203, a walking axis 204 and a front-end silicon wafer grabbing arm 208. The silicon wafer processing module includes one or more of a silicon wafer hydrofluoric acid processing unit 107, a silicon wafer ammonia hydrogen peroxide processing unit 108, a silicon wafer hydrochloric acid hydrogen peroxide processing unit 109, and a silicon wafer drying unit 110. A plurality of silicon wafer processing tanks 106 are arranged at intervals on the silicon wafer processing module, and the silicon wafer processing tanks 106 are used to connect to the silicon wafer processing module so that the silicon wafer processing module processes the silicon wafers in the silicon wafer processing tanks 106. The silicon wafer processing tanks 106 are used to accommodate silicon wafers and silicon wafer support frames 201. The pipe 111 is located below the plurality of silicon wafer processing tanks 106, and the pipe 111 is used to connect to the silicon wafer processing module so that the liquid generated by the silicon wafer processing module processing the silicon wafer flows out of the silicon wafer cleaning device from the pipe 111. At least one exhaust pipeline grille 207 (also known as an acid-base exhaust pipeline grille) is arranged near the plurality of silicon wafer processing tanks 106 so that the first gas generated by the silicon wafer processing module processing the silicon wafer is discharged under the guidance of the exhaust pipeline grille 207. At least one first exhaust channel 206 (also known as an acid-base exhaust channel) is located below the exhaust pipeline grille 207, and is used to exhaust the first gas generated by processing the silicon wafer. At least one second exhaust channel 205 is arranged near the lower end of the mechanical arm, and is used to exhaust the second gas at the location of the mechanical arm. The monitoring module includes a plurality of wind speed detection instruments 103, at least one wind speed detection instrument 103 is arranged near the top to detect the wind speed of the fan, at least one wind speed detection instrument 103 is located in the first exhaust channel 206 to detect the exhaust wind speed of the first gas, and at least one wind speed detection instrument 103 is located in the second exhaust channel 205 to detect the exhaust wind speed of the second gas. In order to detect the wind direction, the monitoring module may also include one or more wind vanes for detecting the wind direction at the location. The wind vane may be, for example, a colored flag, a cloth strip, a paper strip, etc., which is convenient for users to observe with the naked eye or to use machine vision technology for automatic monitoring. The control module may also receive exhaust volume data from the factory service end, so as to realize the monitoring of exhaust volume fluctuations. Among them, the factory service end is the factory service end server, which refers to the server equipment used for factory management and operation.

[0037] like Figure 2 and Figure 3 As shown, in actual application, the principle of wind direction inside the silicon wafer cleaning equipment (which can be referred to as wind direction principle) can be as follows. The wind direction at the location of the silicon wafer loading end 105 and the wind direction at the location of the silicon wafer unloading end 112 are gathered toward the middle of the equipment to reduce the diffusion of chemicals generated in the chemical processing units (for example, silicon wafer hydrofluoric acid processing unit 107, silicon wafer ammonia hydrogen peroxide processing unit 108, silicon wafer hydrochloric acid hydrogen peroxide processing unit 109) to the silicon wafer loading end 105 or the silicon wafer unloading end 112. There is no left and right wind direction between the silicon wafer hydrofluoric acid processing unit 107, the silicon wafer ammonia hydrogen peroxide processing unit 108, the silicon wafer hydrochloric acid hydrogen peroxide processing unit 109, and the silicon wafer drying unit 110, and chemical volatilization will not diffuse to other chemical processing areas.

[0038] The advantage of doing this is that the monitoring data of the silicon wafer cleaning equipment can be used to manipulate its control parameters until the silicon wafer cleaning equipment meets the control targets (for example, one or more of the target air intake volume numerical range, the target air outlet volume numerical range, and the target wind direction numerical range), thereby stabilizing the air intake and outlet volume inside the equipment and the wind direction inside the equipment, and reducing the situation in which chemicals cannot be discharged in time due to fluctuations in factors such as the air intake and outlet volume and wind direction inside the equipment, resulting in chemicals volatilizing to other chemical areas, chemicals volatilizing and being adsorbed on the surface of the processed silicon wafer or the internal surface of the equipment, and chemicals volatilizing to the environment outside the equipment.

[0039] In some embodiments, the method may further include: receiving target setting information, wherein the target setting information is used to determine one or more corresponding target value ranges of the air inlet volume, air outlet volume, and wind direction of the silicon wafer cleaning device. For example, a user may manually enter the target setting information, or the control module may receive the target setting information sent by an external device, or the control device may use default (or pre-set) target setting information. In some embodiments, the target setting information may be received in an initial stage, in which case the target setting information may be referred to as initial setting information.

[0040] The above embodiments do not limit the method of handling the control parameters, for example, a manual control mode or an automatic control mode may be adopted.

[0041] In some embodiments, the corresponding handling of the control parameters of the silicon wafer cleaning equipment based on the monitoring data may include: visual processing of the monitoring data to obtain corresponding visualization information; the visualization information is in one or more formats of text, visualization graphics and visualization tables; in response to a manual adjustment operation on the control parameters, generating a first control instruction corresponding to the manual adjustment operation, the first control instruction being used to configure the control parameters of the silicon wafer cleaning equipment.

[0042] For example, the visualization information can be displayed on the visualization module of the silicon wafer cleaning equipment, so that the user can intuitively understand the current state of the silicon wafer cleaning equipment. As an example, in the manual control mode, the monitoring data measured by the monitoring module (for example, including multiple wind speed detection instruments 103) inside the equipment is integrated into the control module (for example, a control computer), and the exhaust opening and the fan opening are manually adjusted by the control computer to adjust the wind direction and the inlet and outlet air volume inside the equipment. At this time, the control parameters include the exhaust opening and the fan opening, and the control targets include the wind direction and the inlet and outlet air volume. Specifically, on the control computer, the user can directly adjust the exhaust opening and fan frequency (i.e., the operating frequency of the fan) of each unit of the equipment (for example, the silicon wafer hydrofluoric acid processing unit 107, the silicon wafer ammonia hydrogen peroxide processing unit 108, the silicon wafer hydrochloric acid hydrogen peroxide processing unit 109 and the silicon wafer drying unit 110), monitor the wind speed and wind direction inside the equipment through the monitoring module inside the equipment, and then display the visual information on the visualization module. After meeting the above-mentioned wind direction principle settings, automatic production is carried out to achieve visual adjustment of the inlet and outlet air volume and wind direction inside the silicon wafer cleaning equipment.

[0043] In some embodiments, the corresponding handling of the control parameters of the silicon wafer cleaning equipment based on the monitoring data may include: according to the monitoring data, taking one or more corresponding target numerical ranges of the air intake, air outlet and wind direction of the silicon wafer cleaning equipment as automatic control targets, generating a second control instruction, wherein the second control instruction is used to automatically compensate for the control parameters of the silicon wafer cleaning equipment.

[0044] As an example, the corresponding target numerical range of the control parameter can be calculated based on one or more corresponding target numerical ranges of the air inlet, air outlet and wind direction of the silicon wafer cleaning equipment, and the current control parameter can be closed-loop controlled based on the corresponding target numerical range of the control parameter to achieve automatic compensation of the control parameter.

[0045] For example, in the automatic control mode, the fan frequency and exhaust air opening inside the equipment are automatically adjusted according to the corresponding target numerical ranges of the air inlet, air outlet and wind direction (for example, the initially set wind direction and air inlet and outlet), as well as the exhaust air volume fluctuations at the factory service end (which can be monitored by the factory service end) and the air inlet volume fluctuations of the fan at the top of the equipment (which can be monitored by the wind speed detection instrument 103), so as to meet the stability of the air inlet and outlet volume and wind direction inside the equipment, and realize the automatic control of the air inlet and outlet volume and wind direction inside the cleaning equipment. At this time, the control parameters include the exhaust air opening and the fan frequency, and the control targets include the wind direction and the air inlet and outlet volume. When the automatic control mode is adopted, the frequent operation of manual adjustment is reduced, the operating efficiency is improved, the dependence and error rate of human intervention are reduced, and the labor cost is saved.

[0046] In some embodiments, the control parameters may include the exhaust air opening and the fan opening, and the treatment may include proportional adjustment of the exhaust air opening and the fan opening.

[0047] Proportional adjustment may include, for example, proportional increase and / or proportional decrease. In the process of handling the control parameters, the exhaust opening and the fan opening may be proportionally adjusted, and the gas replacement rate of the internal environment of the equipment may be increased or decreased while ensuring the wind direction.

[0048] An embodiment of the present application also provides a control module for a silicon wafer cleaning device, wherein the control module is used to execute any of the above methods.

[0049] The embodiment of the present application also provides a silicon wafer cleaning device, which includes a monitoring module and a control module. The monitoring module is used to monitor the silicon wafer cleaning device to obtain corresponding monitoring data, and the monitoring data includes one or more of the exhaust wind speed, wind direction and fan wind speed inside the silicon wafer cleaning device. The control module is used to receive the corresponding monitoring data of the silicon wafer cleaning device; based on the monitoring data, the control parameters of the silicon wafer cleaning device are processed accordingly until one or more of the air intake, air outlet and wind direction of the silicon wafer cleaning device is within the corresponding target value range; the control parameters include one or more of the exhaust opening, fan opening and fan frequency.

[0050] In some embodiments, the silicon wafer cleaning device may further include a visualization module and an interaction module. The control module may be used to perform corresponding processing on the control parameters of the silicon wafer cleaning device in the following manner: visual processing of the monitoring data to obtain corresponding visualization information; the visualization information is in one or more formats of text, visualization graphics and visualization tables; in response to a manual adjustment operation on the control parameter, a first control instruction corresponding to the manual adjustment operation is generated, and the first control instruction is used to configure the control parameters of the silicon wafer cleaning device. The visualization module may be used to receive and display the visualization information. The interaction module may be used to receive a manual adjustment operation on the control parameter.

[0051] Among them, the visualization module may include, for example, a display, a large screen terminal, etc., and the interaction module may include, for example, a touch screen, a keyboard, a mouse, a microphone, a camera, etc. For example, the user may provide manual adjustment operations to the control module by means of text input, voice input, video input, etc. The control module may process or identify the text, voice, video and other information input by the user, determine the user's control intention, and thus generate a corresponding first control instruction. In other words, the "manual" in the above text refers to the user's manual control operation, not necessarily the user's hand operation. The prefixes "manual" and "automatic" serve to distinguish the control mode. In manual control mode, the user can use text control, voice control, video control and other operation methods, which are not limited in the above embodiment.

[0052] In some embodiments, the control module can be used to perform corresponding operations on the control parameters of the silicon wafer cleaning equipment in the following manner: based on the monitoring data, one or more corresponding target numerical ranges of the air intake, air outlet and wind direction of the silicon wafer cleaning equipment are used as automatic control targets to generate a second control instruction, and the second control instruction is used to automatically compensate for the control parameters of the silicon wafer cleaning equipment.

[0053] In some embodiments, a fan may be provided on the top of the silicon wafer cleaning device, and the interior of the silicon wafer cleaning device may be provided with a silicon wafer loading end 105, a silicon wafer unloading end 112, a robotic arm, a silicon wafer processing module, a plurality of silicon wafer processing tanks 106, a pipe 111, at least one exhaust pipe grille 207, at least one first exhaust channel 206, at least one second exhaust channel 205, a fan, and a monitoring module. The opposite silicon wafer loading end 105 and the silicon wafer unloading end 112 are used to load and unload silicon wafers, respectively. The robotic arm used to carry the silicon wafer includes a robotic arm body 203, a walking axis 204, and a front silicon wafer grabbing arm 208. The silicon wafer processing module includes one or more of a silicon wafer hydrofluoric acid processing unit 107, a silicon wafer ammonia hydrogen peroxide processing unit 108, a silicon wafer hydrochloric acid hydrogen peroxide processing unit 109, and a silicon wafer drying unit 110. A plurality of silicon wafer processing tanks 106 are arranged at intervals on the silicon wafer processing module, and the silicon wafer processing tanks 106 are used to be connected to the silicon wafer processing module so that the silicon wafer processing module processes the silicon wafers in the silicon wafer processing tanks 106. A pipe 111 is located below the plurality of silicon wafer processing tanks 106, and the pipe 111 is used to be connected to the silicon wafer processing module so that the liquid generated by the silicon wafer processing module processing the silicon wafers flows out from the pipe 111. At least one exhaust pipeline grille 207 is arranged near the plurality of silicon wafer processing tanks 106, so that the first gas generated by the silicon wafer processing module processing the silicon wafers is discharged under the guidance of the exhaust pipeline grille 207. At least one first exhaust channel 206 is located below the exhaust pipeline grille 207, and is used to discharge the first gas generated by processing the silicon wafers. At least one second exhaust channel 205 is arranged near the lower end of the mechanical arm, and is used to discharge the second gas at the position where the mechanical arm is located. The monitoring module includes multiple wind speed detection instruments 103, at least one of the wind speed detection instruments 103 is arranged near the top to detect the wind speed of the fan, at least one of the wind speed detection instruments 103 is located in the first exhaust channel 206 to detect the exhaust wind speed of the first gas, and at least one of the wind speed detection instruments 103 is located in the second exhaust channel 205 to detect the exhaust wind speed of the second gas.

[0054] See also Figure 4 , Figure 4 It is a control flow diagram of a silicon wafer cleaning device provided in an embodiment of the present application.

[0055] In a specific application scenario, the silicon wafer cleaning equipment can use a manual control mode or an automatic control mode to achieve the disposal of control parameters. Specifically, in the manual control mode, the control module (for example, a wind speed and wind direction monitoring computer) uses a monitoring module to monitor the wind speed (for example, exhaust wind speed and fan wind speed) and wind direction, and uses a visualization module for visual display. The user manually adjusts the exhaust opening and fan opening of the silicon wafer cleaning equipment to achieve the required wind direction (for example, a target wind direction numerical range) and air volume (for example, including a target air inlet volume numerical range and / or a target air outlet volume numerical range). In the automatic control mode, the control module uses a monitoring module to monitor the wind speed and wind direction, and uses the exhaust volume fluctuations monitored by the factory service end and the wind speed fluctuations monitored by the wind speed detection instrument 103 as control feedback, and automatically compensates for the exhaust opening and fan opening of the equipment, so as to achieve the required wind direction and air volume.

[0056] In practical applications, if the wind speed and area are known, the wind speed can be converted into wind volume by multiplication. This article will not go into details about the relevant calculation methods.

[0057] It should be noted that each embodiment in the present application is described in a progressive manner, and the same or similar parts between the embodiments can be referred to each other, and each embodiment focuses on the differences from other embodiments. In particular, for the product embodiment, since it is basically similar to the method embodiment, the description is relatively simple, and the relevant parts can be referred to the partial description of the method embodiment.

[0058] Unless otherwise defined, the technical terms or scientific terms used in the present disclosure should be understood by people with ordinary skills in the field to which the present disclosure belongs. The "first", "second" and similar words used in the present disclosure do not indicate any order, quantity or importance, but are only used to distinguish different components. "Include" or "comprise" and similar words mean that the elements or objects appearing before the word cover the elements or objects listed after the word and their equivalents, without excluding other elements or objects. "Connect" or "connected" and similar words are not limited to physical or mechanical connections, but can include electrical connections, whether direct or indirect. "Up", "down", "left", "right" and the like are only used to indicate relative positional relationships. When the absolute position of the described object changes, the relative positional relationship may also change accordingly.

[0059] It will be understood that when an element such as a layer, film, region, or substrate is referred to as being “on” or “under” another element, it can be “directly on” or “under” the other element or intervening elements may be present.

[0060] In the description of the above embodiments, specific features, structures, materials or characteristics may be combined in a suitable manner in any one or more embodiments or examples.

[0061] The above is only a specific embodiment of the present disclosure, but the protection scope of the present disclosure is not limited thereto. Any person skilled in the art who is familiar with the technical field can easily think of changes or substitutions within the technical scope disclosed in the present disclosure, which should be included in the protection scope of the present disclosure. Therefore, the protection scope of the present disclosure should be based on the protection scope of the claims.

Claims

1. A control method for a silicon wafer cleaning device, characterized in that: The method comprises: Receiving corresponding monitoring data of the silicon wafer cleaning device, wherein the monitoring data includes one or more of exhaust wind speed, wind direction and fan wind speed inside the silicon wafer cleaning device; Based on the monitoring data, the control parameters of the silicon wafer cleaning equipment are processed accordingly until one or more of the air intake, air outlet and wind direction of the silicon wafer cleaning equipment is within the corresponding target value range; the control parameters include one or more of the exhaust opening, fan opening and fan frequency.

2. The control method of silicon wafer cleaning equipment according to claim 1, characterized in that: The method further comprises: Receive target setting information, where the target setting information is used to determine one or more corresponding target value ranges of air inlet volume, air outlet volume, and wind direction of the silicon wafer cleaning equipment.

3. The control method of silicon wafer cleaning equipment according to claim 1, characterized in that: Based on the monitoring data, the control parameters of the silicon wafer cleaning equipment are processed accordingly, including: Performing visualization processing on the monitoring data to obtain corresponding visualization information; the visualization information is in one or more formats of text, visualization graphics and visualization tables; In response to a manual adjustment operation on the control parameter, a first control instruction corresponding to the manual adjustment operation is generated, where the first control instruction is used to configure the control parameter of the silicon wafer cleaning device.

4. The control method of silicon wafer cleaning equipment according to claim 1, characterized in that: Based on the monitoring data, the control parameters of the silicon wafer cleaning equipment are processed accordingly, including: According to the monitoring data, a second control instruction is generated with one or more corresponding target numerical ranges of the air intake, air outlet and wind direction of the silicon wafer cleaning equipment as automatic control targets, and the second control instruction is used to automatically compensate for the control parameters of the silicon wafer cleaning equipment.

5. The control method of silicon wafer cleaning equipment according to claim 1, characterized in that: The control parameters include the exhaust air opening and the fan opening, and the treatment includes proportional adjustment of the exhaust air opening and the fan opening.

6. A control module for a silicon wafer cleaning device, characterized in that: The control module is used to execute the method according to any one of claims 1 to 5.

7. A silicon wafer cleaning device, characterized in that: The silicon wafer cleaning equipment comprises: A monitoring module, used to monitor the silicon wafer cleaning device to obtain corresponding monitoring data, wherein the monitoring data includes one or more of the exhaust wind speed, wind direction and fan wind speed inside the silicon wafer cleaning device; A control module is used to receive the corresponding monitoring data of the silicon wafer cleaning equipment; based on the monitoring data, the control parameters of the silicon wafer cleaning equipment are processed accordingly until one or more of the air intake, air outlet and wind direction of the silicon wafer cleaning equipment is within the corresponding target value range; the control parameters include one or more of the exhaust opening, fan opening and fan frequency.

8. The silicon wafer cleaning equipment according to claim 7, characterized in that: The silicon wafer cleaning device also includes a visualization module and an interaction module; The control module is used to process the control parameters of the silicon wafer cleaning device in the following manner: visually process the monitoring data to obtain corresponding visual information; the visual information is in one or more formats of text, visual graphics and visual tables; in response to a manual adjustment operation on the control parameter, generate a first control instruction corresponding to the manual adjustment operation, the first control instruction is used to configure the control parameters of the silicon wafer cleaning device; The visualization module is used to receive and display the visualization information; The interaction module is used to receive a manual adjustment operation for the control parameter.

9. The silicon wafer cleaning equipment according to claim 7, characterized in that: The control module is used to process the control parameters of the silicon wafer cleaning equipment in the following manner: According to the monitoring data, a second control instruction is generated with one or more corresponding target numerical ranges of the air intake, air outlet and wind direction of the silicon wafer cleaning equipment as automatic control targets, and the second control instruction is used to automatically compensate for the control parameters of the silicon wafer cleaning equipment.

10. The silicon wafer cleaning equipment according to claim 7, characterized in that: A fan is provided on the top of the silicon wafer cleaning device, and the inside of the silicon wafer cleaning device is provided with: The opposite silicon wafer loading end and silicon wafer unloading end are used for loading and unloading silicon wafers respectively; A robotic arm for carrying the silicon wafer, comprising a robotic arm body, a walking axis and a front-end silicon wafer grabbing arm; A silicon wafer processing module, including one or more of a silicon wafer hydrofluoric acid processing unit, a silicon wafer ammonia hydrogen peroxide processing unit, a silicon wafer hydrochloric acid hydrogen peroxide processing unit, and a silicon wafer drying unit; A plurality of silicon wafer processing tanks are arranged at intervals on the silicon wafer processing module, and the silicon wafer processing tanks are used to be connected to the silicon wafer processing module so that the silicon wafer processing module processes the silicon wafers in the silicon wafer processing tanks; A pipe is located below the plurality of silicon wafer processing tanks, and the pipe is used to connect to the silicon wafer processing module so that liquid generated by the silicon wafer processing module processing the silicon wafer flows out from the pipe; At least one exhaust pipeline grille is disposed near the plurality of silicon wafer processing tanks so that the first gas generated by the silicon wafer processing module when processing the silicon wafers is discharged under the guidance of the exhaust pipeline grille; at least one first exhaust channel, located below the exhaust pipe grid, for exhausting a first gas generated by processing the silicon wafer; at least one second exhaust channel, disposed near the lower end of the mechanical arm, for exhausting a second gas at a location where the mechanical arm is located; The monitoring module includes multiple wind speed detection instruments, at least one of which is arranged near the top to detect the wind speed of the fan, at least one of which is located in the first exhaust channel to detect the exhaust wind speed of the first gas, and at least one of which is located in the second exhaust channel to detect the exhaust wind speed of the second gas.

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