Preparation process of current type grid regulation and control light-emitting device

Abstract

The invention discloses a preparation process of a current type grid regulation and control light-emitting device, which comprises the following steps of: coating a first conductive layer on a substrate, and photoetching the first conductive layer to respectively form a first electrode and a grid regulation and control electrode; covering a first carrier material on the first electrode through thin film deposition to form a first carrier transport layer; uniformly coating quantum dot semiconductor nanocrystals on the first carrier transport layer to form a quantum dot light-emitting layer; covering the quantum dot light-emitting layer and the grid regulation and control electrode with a second carrier material through thin film deposition, and forming a second carrier transmission layer on the quantum dot light-emitting layer and forming a second carrier regulation and control layer on the grid regulation and control electrode respectively; and coating a second conductive layer on the second carrier transmission layer and the second carrier regulation and control layer, and photoetching the second conductive layer to form a second electrode so as to obtain the current type grid regulation and control light-emitting device. The preparation process of the gate regulation electrode light-emitting device is simplified, and the preparation efficiency is improved.

Description

Technical Field

[0001] The invention relates to the field of optoelectronic display, and in particular to a preparation process of a current-type gate-regulated light-emitting device. Background Art

[0002] The light-emitting devices in optoelectronic displays are an important component of display devices. They present images or information by emitting light. The light-emitting principle of many light-emitting devices is based on the fact that after power is turned on, electrons and holes combine in the light-emitting layer to form excitons, and when the excitons recombine, they release energy and emit light, such as QLED (quantum dot light-emitting diodes) and OLED (organic light-emitting diodes). These light-emitting devices have the advantages of rich color performance, high contrast, fast response speed, wide viewing angle, energy saving and environmental protection. The luminous efficiency or luminous brightness of these light-emitting devices is greatly affected by the carrier recombination process. Different functional layers and quantum dots are usually used to obtain the optimal device efficiency. This experimental process requires a lot of time, materials and labor costs. Therefore, gate regulation has emerged. Through gate regulation, a built-in electric field can be constructed in these light-emitting devices to achieve the regulation of carrier mobility and the regulation of luminous efficiency, which helps to improve the luminous efficiency.

[0003] Generally, gate-controlled light-emitting devices are voltage-type, that is, the gate-controlled electrode is connected to the insulating layer. However, in the preparation process of voltage-type gate-controlled light-emitting devices, the insulating layer needs to be prepared separately, which makes the preparation process more complicated and reduces the preparation efficiency. Summary of the invention

[0004] In view of the above-mentioned defects of the prior art, the technical problem to be solved by the present invention is to provide a current-type gate-regulated light-emitting device preparation process, aiming to ensure the gate regulation effect while simplifying the preparation process and improving the preparation efficiency of the gate-regulated electrode light-emitting device.

[0005] To achieve the above object, the present invention discloses a process for preparing a current-type gate-controlled light-emitting device, the process comprising:

[0006] Step S1, coating a first conductive layer on a substrate, and performing photolithography on the first conductive layer to form a first electrode and a gate control electrode respectively;

[0007] Step S2, covering the first electrode with a first carrier material by thin film deposition to form a first carrier transport layer;

[0008] Step S3, uniformly coating quantum dot semiconductor nanocrystals on the first carrier transport layer, so that the quantum dot semiconductor nanocrystals cover the first carrier transport layer to form a quantum dot light-emitting layer;

[0009] Step S4, covering the second carrier material on the quantum dot light-emitting layer and the gate control electrode by thin film deposition, forming a second carrier transport layer on the quantum dot light-emitting layer and a second carrier control layer on the gate control electrode respectively; wherein the second carrier transport layer and the second carrier control layer are independent of each other;

[0010] Step S5, coating a second conductive layer on the second carrier transport layer and the second carrier regulation layer, photolithography the second conductive layer to form a second electrode, and thereby obtaining a current-type gate-regulated light-emitting device; wherein the second electrode covers the second carrier transport layer, and is partially built on the second carrier regulation layer, and forms a conductive connection between the second carrier transport layer and the second carrier regulation layer; the gate regulation electrode is used to apply a gate voltage relative to the second electrode, and the gate voltage forms a regulation current between the gate regulation electrode, the second carrier regulation layer and the second electrode, and the regulation current is used to regulate the mobility of the second carrier on the second electrode side and thereby adjust the luminous efficiency and / or luminous brightness of the current-type gate-regulated light-emitting device.

[0011] Optionally, the resistance of the second carrier regulation layer depends on the contact surface size of the second carrier regulation layer below the second electrode; wherein the contact surface size of the second carrier regulation layer below the second electrode is controlled when preparing the second carrier regulation layer.

[0012] Optionally, the quantum dot light-emitting layer has different corresponding majority carriers depending on the quantum dot semiconductor nanocrystal material, and the quantum dot light-emitting layer includes an electronic quantum dot light-emitting layer in which the majority carriers are electrons and a hole quantum dot light-emitting layer in which the majority carriers are holes.

[0013] Optionally, the first electrode is an anode, the first carrier transport layer is a hole transport layer, the second carrier transport layer is an electron transport layer, the second electrode is a cathode, and the second carrier regulation layer is an electron regulation layer.

[0014] Optionally, the first electrode is a cathode, the first carrier transport layer is an electron transport layer, the second carrier transport layer is a hole transport layer, the second electrode is an anode, and the second carrier regulation layer is a hole regulation layer.

[0015] Optionally, the current-type gate-regulated light-emitting device controls the application size and direction of the gate voltage according to the requirements of adjusting the luminous brightness and luminous efficiency; wherein the application direction of the gate voltage is also based on the setting position of the gate regulation electrode.

[0016] Optionally, the thin film deposition in step S2 and step S4 includes: one of spin coating, spray coating and evaporation.

[0017] Optionally, the photolithography process in step S1 and step S5 includes: coating photoresist, exposing, developing and etching.

[0018] Beneficial effects of the embodiments of the present invention: 1. The current-type gate-controlled light-emitting device prepared by the present invention can also adjust the gate voltage through the current, and the insulating layer connected to the gate control electrode needs to be replaced with a conductive layer, and the conductive layer can be prepared together with some layers of the light-emitting device itself. That is, in the present invention, the second carrier transport layer corresponding to the second electrode and the second carrier control layer corresponding to the gate control electrode are prepared together. Compared with the preparation process of the voltage-type gate-controlled light-emitting device in the prior art, the second carrier control layer corresponding to the gate control electrode of the present invention can be prepared together with the layer of the light-emitting device itself, without the need to prepare the insulating layer separately, so the preparation process can be simplified and the preparation efficiency can be improved. 2. The gate control electrode of the current-type gate-controlled light-emitting device prepared by the present invention is used to apply a gate voltage relative to the second electrode, and the gate voltage forms a control current between the gate control electrode, the second carrier control layer and the second electrode. The control current is used to control the mobility of the second carrier on the second electrode side and then adjust the luminous efficiency and / or luminous brightness of the current-type gate-controlled light-emitting device. The present invention can reduce the experimental time of different functional layers and quantum dots through gate control, and can also achieve ideal luminous efficiency and luminous brightness. 3. The present invention controls the resistance of the second carrier regulation layer by the contact surface size of the second carrier regulation layer under the second electrode, so as to avoid the second carrier regulation layer from burning due to excessive current passing through due to too small resistance. 4. The internal hierarchical structure of the current-type gate-regulated light-emitting device corresponding to the present invention is generally that the upper layer covers and wraps the lower layer, which can increase the contact surface and ensure product quality.

[0019] In summary, the present invention provides a current-type gate-regulated light-emitting device preparation process, which simplifies the gate-regulated electrode light-emitting device preparation process while ensuring the gate regulation effect, thereby improving the preparation efficiency. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] Figure 1 It is a schematic diagram of a process for preparing a current-type gate-controlled light-emitting device provided by a specific embodiment of the present invention;

[0021] Figure 2 It is a structural schematic diagram of a current-type gate-controlled light-emitting device provided by a specific embodiment of the present invention;

[0022] Figure 3is a schematic diagram of a top view of the structure of a second electrode and a second carrier regulation layer of a current-type gate-regulated light-emitting device provided by a specific embodiment of the present invention;

[0023] Figure 4 It is a schematic diagram of changes in a current-type gate-controlled light-emitting device in step S1 provided in a specific embodiment of the present invention;

[0024] Figure 5 It is a schematic diagram of changes in a current-type gate-controlled light-emitting device in step S2 provided in a specific embodiment of the present invention;

[0025] Figure 6 It is a schematic diagram of changes in a current-type gate-controlled light-emitting device in step S3 provided in a specific embodiment of the present invention;

[0026] Figure 7 It is a schematic diagram of changes in a current-type gate-controlled light-emitting device in step S4 provided in a specific embodiment of the present invention;

[0027] Figure 8 It is a schematic diagram of changes in a current-type gate-controlled light-emitting device in step S5 provided in a specific embodiment of the present invention. DETAILED DESCRIPTION

[0028] The present invention discloses a process for preparing a current-type gate-regulated light-emitting device. Those skilled in the art can refer to the content of this article and appropriately improve the technical details for implementation. It should be particularly noted that all similar substitutions and modifications are obvious to those skilled in the art, and they are all deemed to be included in the present invention. The method and application of the present invention have been described through preferred embodiments, and relevant personnel can obviously modify or appropriately change and combine the methods and applications described herein without departing from the content, spirit and scope of the present invention to implement and apply the technology of the present invention.

[0029] The applicant has found that: generally, gate-controlled light-emitting devices are voltage-type, that is, the gate-controlled electrode is connected to the insulating layer. However, in the preparation process of voltage-type gate-controlled light-emitting devices, the insulating layer needs to be prepared separately, which makes the preparation process more complicated and reduces the preparation efficiency. At the same time, gate voltage can also be regulated by current. At this time, the insulating layer connected to the gate-controlled electrode needs to be replaced with a conductive layer, and the light-emitting device itself contains several conductive layers. How to make the conductive layers together becomes a problem.

[0030] Therefore, the embodiment of the present invention provides a current-type gate-controlled light-emitting device manufacturing process, such as Figure 1 As shown, the process includes:

[0031] Step S1, coating a first conductive layer on a substrate, and performing photolithography on the first conductive layer to form a first electrode and a gate control electrode respectively.

[0032] It should be noted that the first electrode and the gate control electrode can be prepared using the same material, so they can be manufactured at the same level.

[0033] In this specific embodiment, the current-type gate-controlled light-emitting device changes in step S1 as follows: Figure 4 shown.

[0034] Step S2: Covering the first carrier material on the first electrode by thin film deposition to form a first carrier transport layer.

[0035] In this specific embodiment, the current-type gate-controlled light-emitting device changes in step S2 as follows: Figure 5 shown.

[0036] Step S3: uniformly coating quantum dot semiconductor nanocrystals on the first carrier transport layer so that the quantum dot semiconductor nanocrystals cover the first carrier transport layer to form a quantum dot light-emitting layer.

[0037] In this specific embodiment, the current-type gate-controlled light-emitting device changes in step S3 as follows: Figure 6 shown.

[0038] In this specific embodiment, the quantum dot light-emitting layer has different corresponding majority carriers depending on the quantum dot semiconductor nanocrystal material. The quantum dot light-emitting layer includes an electronic type quantum dot light-emitting layer in which the majority carriers are electrons and a hole type quantum dot light-emitting layer in which the majority carriers are holes.

[0039] Step S4: Cover the second carrier material on the quantum dot light-emitting layer and the gate control electrode by thin film deposition, and form a second carrier transport layer on the quantum dot light-emitting layer and a second carrier control layer on the gate control electrode respectively.

[0040] Wherein, the second carrier transport layer and the second carrier regulation layer are independent of each other.

[0041] In this specific embodiment, the current-type gate-controlled light-emitting device changes in step S4 as follows: Figure 7 shown.

[0042] Step S5, coating a second conductive layer on the second carrier transport layer and the second carrier regulation layer, performing photolithography on the second conductive layer to form a second electrode, and thereby obtaining a current-type gate-regulated light-emitting device.

[0043] Among them, the second electrode covers the second carrier transport layer, and is partially built on the second carrier regulation layer, and forms a conductive connection between the second carrier transport layer and the second carrier regulation layer; the gate regulation electrode is used to apply a gate voltage relative to the second electrode, and the gate voltage forms a regulation current between the gate regulation electrode, the second carrier regulation layer and the second electrode. The regulation current is used to regulate the mobility of the second carrier on the second electrode side and thereby adjust the luminous efficiency and / or luminous brightness of the current-type gate-regulated light-emitting device.

[0044] In this specific embodiment, the current-type gate-controlled light-emitting device changes in step S5 as follows: Figure 8 shown.

[0045] It should be noted that the current-type gate-controlled light-emitting device prepared in the embodiment of the present invention uses a second carrier control layer (a conductive layer) instead of an insulating layer, compared to a voltage-type gate-controlled light-emitting device, to achieve gate control through current. Also, because the second carrier control layer can be prepared together with the second carrier transport layer at the same level, unlike the insulating layer which needs to be prepared separately, the preparation process can be simplified and the preparation efficiency can be improved.

[0046] The final current-type gate-controlled light-emitting device can be Figure 2 As shown, it includes: a substrate 201, a first electrode 202, a first carrier transport layer 203, a quantum dot light-emitting layer 204, a second carrier transport layer 205, a second electrode 206, a gate control electrode 207, and a second carrier control layer 208.

[0047] In this specific embodiment, the resistance of the second carrier regulation layer depends on the contact surface size of the second carrier regulation layer under the second electrode; wherein, the contact surface size of the second carrier regulation layer under the second electrode is controlled when preparing the second carrier regulation layer.

[0048] It should be noted that the current-type gate-controlled light-emitting device needs to pass current through the second carrier control layer, but excessive current can easily burn the second carrier control layer. Therefore, it is necessary to control its resistance to ensure that the current passing through will not burn the second carrier control layer.

[0049] In this specific embodiment, the top view structural diagram of the second electrode and the second carrier regulation layer can be as follows: Figure 3 As shown, Figure 3 In the figure, 301 is the second electrode, 302 is the second carrier regulating layer, and 303 is the gate regulating electrode. The side of the second carrier regulating layer 302 in contact with the second electrode 301 is configured to be elongated to increase the resistance value, reduce the passing current, and avoid burning.

[0050] In this specific embodiment, the first electrode is an anode, the first carrier transport layer is a hole transport layer, the second carrier transport layer is an electron transport layer, the second electrode is a cathode, and the second carrier regulation layer is an electron regulation layer.

[0051] In another specific embodiment, the first electrode is a cathode, the first carrier transport layer is an electron transport layer, the second carrier transport layer is a hole transport layer, the second electrode is an anode, and the second carrier regulation layer is a hole regulation layer.

[0052] It should be noted that, regardless of the hierarchical arrangement of the current-type gate-controlled light-emitting device, the anode can be made of metal materials, silicon materials, tin-doped indium oxide, aluminum-doped zinc oxide, etc., the hole transport layer can be made of organic semiconductor materials, such as TFB, the cathode can be made of transparent conductive materials such as metal materials magnesium-silver alloy, and the electron transport layer can be made of zinc oxide and other inorganic materials. Whether the anode and cathode are made of transparent materials depends on which electrode emits light to the outside of the screen.

[0053] In this specific embodiment, the current-type gate-regulated light-emitting device controls the magnitude and direction of gate voltage application according to the requirements of luminous brightness and luminous efficiency adjustment; wherein the direction of gate voltage application is also based on the setting position of the gate regulation electrode.

[0054] In the first specific embodiment, the first electrode is an anode, the first carrier transport layer is a hole transport layer, the second carrier transport layer is an electron transport layer, the second electrode is a cathode, the second carrier regulation layer is an electron regulation layer, and the quantum dot light-emitting layer is a hole-type quantum dot light-emitting layer. The regulation electrode applies a negative gate voltage so that the electrons in the second carrier regulation layer enter the second carrier transport layer through the cathode, and then the excess holes in the quantum dot light-emitting layer can combine with more electrons and accelerate the combination efficiency, thereby improving the luminous efficiency and luminous brightness of the current-type gate-regulated light-emitting device.

[0055] In a second specific embodiment, the first electrode is an anode, the first carrier transport layer is a hole transport layer, the second carrier transport layer is an electron transport layer, the second electrode is a cathode, the second carrier control layer is an electron control layer, and the quantum dot light-emitting layer is an electronic quantum dot light-emitting layer. When the control electrode applies a positive gate voltage, the excess electrons in the quantum dot light-emitting layer pass through the cathode second carrier control layer, thereby improving the light-emitting efficiency of the current-type gate-controlled light-emitting device. When the control electrode applies a negative gate voltage, the electrons in the second carrier control layer enter the second carrier transport layer through the cathode. Because the number of electrons increases, the electron and hole combination speed in the quantum dot light-emitting layer increases, thereby improving the light-emitting brightness of the current-type gate-controlled light-emitting device.

[0056] In the third specific embodiment, the first electrode is a cathode, the first carrier transport layer is an electron transport layer, the second carrier transport layer is a hole transport layer, the second electrode is an anode, the second carrier regulation layer is a hole regulation layer, and the quantum dot light-emitting layer is an electron-type quantum dot light-emitting layer. The regulation electrode applies a positive gate voltage so that the holes in the second carrier regulation layer enter the second carrier transport layer through the cathode, and then the excess electrons in the quantum dot light-emitting layer can combine with more holes and accelerate the combination efficiency, thereby improving the luminous efficiency and luminous brightness of the current-type gate-regulated light-emitting device.

[0057] In a fourth specific embodiment, the first electrode is a cathode, the first carrier transport layer is an electron transport layer, the second carrier transport layer is a hole transport layer, the second electrode is an anode, the second carrier regulation layer is a hole regulation layer, and the quantum dot light-emitting layer is a hole-type quantum dot light-emitting layer. When the regulation electrode applies a negative gate voltage, the excess holes in the quantum dot light-emitting layer pass through the cathode second carrier regulation layer, thereby improving the light-emitting efficiency of the current-type gate-regulated light-emitting device. When the regulation electrode applies a positive gate voltage, the holes in the second carrier regulation layer enter the second carrier transport layer through the cathode. Because the number of holes increases, the electron and hole combination speed in the quantum dot light-emitting layer increases, thereby improving the light-emitting brightness of the current-type gate-regulated light-emitting device.

[0058] In this specific embodiment, the thin film deposition in step S2 and step S4 includes: one of spin coating, spray coating and evaporation.

[0059] In this specific embodiment, the photolithography process in step S1 and step S5 includes: coating photoresist, exposure, development and etching.

[0060] The current-type gate-controlled light-emitting device prepared in the embodiment of the present invention can also adjust the gate voltage through the current, and at the same time, the insulating layer connected to the gate control electrode needs to be replaced with a conductive layer, and the conductive layer can be prepared together with some layers of the light-emitting device itself. That is, in the embodiment of the present invention, the second carrier transport layer corresponding to the second electrode and the second carrier control layer corresponding to the gate control electrode are prepared together. Compared with the preparation process of the voltage-type gate-controlled light-emitting device in the prior art, the second carrier control layer corresponding to the gate control electrode in the embodiment of the present invention can be prepared together with the layer of the light-emitting device itself, without the need to prepare the insulating layer separately, so the preparation process can be simplified and the preparation efficiency can be improved.

[0061] The gate control electrode of the current-type gate-controlled light-emitting device prepared in the embodiment of the present invention is used to apply a gate voltage relative to the second electrode, and the gate voltage forms a control current between the gate control electrode, the second carrier control layer and the second electrode, and the control current is used to control the mobility of the second carrier on the second electrode side and thus adjust the luminous efficiency and / or luminous brightness of the current-type gate-controlled light-emitting device. Through gate control, the experimental time of matching different functional layers and quantum dots can be reduced, and the ideal luminous efficiency and luminous brightness can also be achieved.

[0062] In the embodiment of the present invention, the resistance of the second carrier regulating layer is controlled by the contact surface size of the second carrier regulating layer below the second electrode, so as to avoid the second carrier regulating layer being burned due to excessive current passing through due to too small resistance.

[0063] The internal hierarchical structure of the current-type gate-controlled light-emitting device corresponding to the embodiment of the present invention is generally that the upper layer covers and wraps the lower layer, which can increase the contact surface and ensure product quality.

[0064] In summary, the embodiments of the present invention provide a process for preparing a current-type gate-controlled light-emitting device, which simplifies the process for preparing a gate-controlled electrode light-emitting device while ensuring the gate control effect, thereby improving the preparation efficiency.

[0065] It should be noted that, in this article, relational terms such as first and second, etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "include", "comprise" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device. In the absence of further restrictions, the elements defined by the sentence "comprise a ..." do not exclude the existence of other identical elements in the process, method, article or device including the elements.

[0066] Each embodiment in this specification is described in a related manner, and the same or similar parts between the embodiments can be referred to each other, and each embodiment focuses on the differences from other embodiments. In particular, for the system embodiment, since it is basically similar to the method embodiment, the description is relatively simple, and the relevant parts can be referred to the partial description of the method embodiment.

[0067] The above are only preferred embodiments of the present invention and are not intended to limit the protection scope of the present invention. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention are included in the protection scope of the present invention.

Claims

1. A process for preparing a current-type gate-controlled light-emitting device, characterized in that: The process comprises: Step S1, coating a first conductive layer on a substrate, and performing photolithography on the first conductive layer to form a first electrode and a gate control electrode respectively; Step S2, covering the first electrode with a first carrier material by thin film deposition to form a first carrier transport layer; Step S3, uniformly coating quantum dot semiconductor nanocrystals on the first carrier transport layer, so that the quantum dot semiconductor nanocrystals cover the first carrier transport layer to form a quantum dot light-emitting layer; Step S4, covering the second carrier material on the quantum dot light-emitting layer and the gate control electrode by thin film deposition, forming a second carrier transport layer on the quantum dot light-emitting layer and a second carrier control layer on the gate control electrode respectively; wherein the second carrier transport layer and the second carrier control layer are independent of each other; Step S5, coating a second conductive layer on the second carrier transport layer and the second carrier regulation layer, photolithography the second conductive layer to form a second electrode, and thereby obtaining a current-type gate-regulated light-emitting device; wherein the second electrode covers the second carrier transport layer, and is partially built on the second carrier regulation layer, and forms a conductive connection between the second carrier transport layer and the second carrier regulation layer; the gate regulation electrode is used to apply a gate voltage relative to the second electrode, and the gate voltage forms a regulation current between the gate regulation electrode, the second carrier regulation layer and the second electrode, and the regulation current is used to regulate the mobility of the second carrier on the second electrode side and thereby adjust the luminous efficiency and / or luminous brightness of the current-type gate-regulated light-emitting device.

2. The process for preparing a current-type gate-controlled light-emitting device according to claim 1, characterized in that: The resistance of the second carrier regulation layer depends on the contact surface size of the second carrier regulation layer under the second electrode; wherein the contact surface size of the second carrier regulation layer under the second electrode is controlled when preparing the second carrier regulation layer.

3. The process for preparing a current-type gate-controlled light-emitting device according to claim 1, characterized in that: The quantum dot light-emitting layer has different corresponding majority carriers according to the different quantum dot semiconductor nanocrystal materials. The quantum dot light-emitting layer includes an electronic quantum dot light-emitting layer in which the majority carriers are electrons and a hole quantum dot light-emitting layer in which the majority carriers are holes.

4. The process for preparing a current-type gate-controlled light-emitting device according to claim 1, characterized in that: The first electrode is an anode, the first carrier transport layer is a hole transport layer, the second carrier transport layer is an electron transport layer, the second electrode is a cathode, and the second carrier regulation layer is an electron regulation layer.

5. The process for preparing a current-type gate-controlled light-emitting device according to claim 1, characterized in that: The first electrode is a cathode, the first carrier transport layer is an electron transport layer, the second carrier transport layer is a hole transport layer, the second electrode is an anode, and the second carrier regulation layer is a hole regulation layer.

6. The process for preparing a current-type gate-controlled light-emitting device according to claim 1, characterized in that: The current-type gate-regulated light-emitting device controls the magnitude and direction of the gate voltage applied according to the requirements for adjusting the luminous brightness and luminous efficiency; wherein the direction of the gate voltage applied is also based on the setting position of the gate regulation electrode.

7. The process for preparing a current-type gate-controlled light-emitting device according to claim 1, characterized in that: The thin film deposition in step S2 and step S4 includes one of spin coating, spray coating and evaporation.

8. The process for preparing a current-type gate-controlled light-emitting device according to claim 1, characterized in that: The photolithography process in step S1 and step S5 includes: coating photoresist, exposure, development and etching.

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