Double-source ion beam micro-nano polishing equipment capable of accurately controlling temperature

Abstract

The invention provides double-source ion beam micro-nano polishing equipment capable of accurately controlling temperature. The double-source ion beam micro-nano polishing equipment comprises an ion source, a sample temperature control mechanism and an ion beam current detection mechanism, the number of the ion sources is two, the two ion sources both face the sample table, each ion source comprises a protective shell, a gas introduction channel is arranged in the protective shell, a Penning ion gun, an accelerating electrode and an electrostatic lens are sequentially arranged at the gas introduction channel, and the Penning ion gun, the accelerating electrode and the electrostatic lens are all connected with the power supply module; the ionization voltage Vd of the Penning ion gun, the acceleration voltage Va of the acceleration electrode and the focusing voltage Ve of the electrostatic lens are regulated and controlled through the power supply module, the ion beam detection mechanism is used for monitoring the spatial distribution of ion beams in real time, and the sample temperature control mechanism is connected with the sample table and is used for regulating and controlling the temperature of the sample table. The device is high in processing efficiency, can efficiently control the temperature of a sample area, facilitates real-time detection, and optimizes ion beam energy distribution.

Description

Technical Field

[0001] The invention relates to the technical field of ion beam equipment, in particular to a dual-source ion beam micro-nano polishing equipment capable of precisely controlling temperature. Background Art

[0002] The functions and performance of materials are greatly affected by their surface morphology and elemental composition. The surface morphology and composition of materials are often characterized by scanning electron microscopy (SEM) and transmission electron microscopy (TEM). However, the surface of the material is usually exposed to the atmosphere, and after oxidation and contamination, a layer of nanometer to tens of micrometers, or even thicker, film-like structure is formed. Before SEM or TEM testing, it needs to be processed to show its intrinsic surface. Ion beam polishing and etching tools use positively charged ion beams to continuously bombard the target area of ​​the sample in a vacuum environment to prepare the sample surface. During the processing, the sample is in a state of continuous swinging or rotation, and a flat cross section or plane without mechanical damage can be prepared, which helps to improve the resolution and clarity of SEM / TEM images and obtain true sample surface morphology, element distribution and other information.

[0003] Traditional ion beam processing equipment mostly uses focused ion beam to process samples, and it is a single ion source. The beam spot diameter of the focused ion beam is small. It usually takes several hours or even overnight to process a sample, which takes too long and has low flux. In order to improve processing efficiency, there are already dual-source ion beam processing equipment on the market, but due to the characteristics of the focused ion beam itself, it can only improve processing efficiency to a certain extent, and the flux is still low. In addition, the ion beam processing process is carried out in a vacuum environment. The local temperature rise in the sample processing area cannot be dissipated in time, which may cause local thermal damage, especially for temperature-sensitive samples. To avoid thermal damage, the supplier configures a liquid nitrogen refrigeration device on the ion beam equipment to provide a cold source, transfer the heat of the sample stage to the cold source, and keep the sample in a low temperature state. The low-temperature control method based on liquid nitrogen refrigeration requires the installation of a Dewar tank or an automatic liquid nitrogen filling subsystem. The temperature of liquid nitrogen is around -196 degrees Celsius, which will cause the temperature of the sample area to be too low or not the expected temperature. Therefore, this low-temperature control method often requires the installation of a heating component near the sample stage, making the temperature control of the ion beam equipment more complicated and increasing the complexity of operation.

[0004] After the ion beam equipment has been working for a long time, the ion beam emitted by the ion source structure will cause wear of its internal structural components; in the process of processing the sample, tiny particles sputtered from the processing surface adhere to the ion source, vacuum chamber, and especially the ion ejection port. The changes in the conditions in these vacuum chambers cause the energy distribution and shape of the ion beam to change with the increase in usage time, which will result in different processing effects for the same processing plan. Summary of the invention

[0005] The present invention provides a dual-source ion beam micro-nano polishing device capable of precisely controlling temperature, which has high processing efficiency, can efficiently control the temperature of the sample area, facilitates real-time detection, and optimizes ion beam energy distribution.

[0006] The technical solution of the present invention is achieved as follows: a dual-source ion beam micro-nano polishing device with precise temperature control includes an ion source, a sample temperature control mechanism and an ion beam flow detection mechanism; the ion source includes two, both facing the sample stage, the ion source includes a protective shell, a gas introduction channel is arranged in the protective shell, a Penning ion gun, an accelerating electrode and an electrostatic lens are arranged in sequence at the gas introduction channel, the Penning ion gun, the accelerating electrode and the electrostatic lens are all connected to a power module, the ionization voltage Vd of the Penning ion gun, the accelerating voltage Va of the accelerating electrode and the focusing voltage Ve of the electrostatic lens are regulated by the power module, the ion beam flow detection mechanism is used to monitor the spatial distribution of the ion beam flow in real time, and the sample temperature control mechanism is connected to the sample stage and is used to regulate the temperature of the sample stage.

[0007] Furthermore, the ion beam detection mechanism includes a detection component, which is connected to a supporting member, and the position of the detection component is adjusted by the supporting member. The detection component includes an insulating isolation layer, and detection electrodes are arranged on both sides of the insulating isolation layer. The side of the detection electrode away from the insulating isolation layer faces the ion source, and is used to receive the positively charged ion beam emitted by the ion source.

[0008] Furthermore, the ion beam current detection mechanism also includes a first ammeter, which corresponds to the detection electrode one by one, one end of the first ammeter is connected to the detection electrode, and the other end is connected to the ground wire, for measuring the ion beam current.

[0009] Furthermore, the sample temperature control mechanism includes a PN type semiconductor module, the cold end face of the PN type semiconductor module is connected to the heat conducting component through a detachable flexible heat conducting wire, the heat conducting component is connected to the sample stage, and the hot end face of the PN type semiconductor module is connected to the cold water circulation device. The detachable flexible heat conducting wire is used for easy disassembly and maintenance.

[0010] Furthermore, a temperature-sensitive sensor is also provided on the cold end surface of the PN-type semiconductor module. The PN-type semiconductor module is connected to the power filter module. The power filter module and the temperature-sensitive sensor are both connected to the PID control module.

[0011] Furthermore, the Penning ion gun comprises an annular cathode and an annular counter-cathode, an annular anode is arranged between the annular cathode and the annular counter-cathode, and a cylindrical permanent magnet is arranged on the outer side of the annular anode.

[0012] Furthermore, the electrostatic lens includes a first electrostatic lens electrode, one side of the first electrostatic lens electrode is close to the acceleration electrode, and the other side is provided with a second electrostatic lens electrode, and both the first electrostatic lens electrode and the second electrostatic lens electrode are annular pole plates.

[0013] Furthermore, a side of the detection electrode away from the insulating isolation layer is in a cup-shaped concave surface, which is convenient for receiving the ion beam.

[0014] Furthermore, two ion sources are symmetrically arranged on the left and right sides of the sample stage, the central axes of the ion beams emitted by the two ion sources overlap or are parallel, the sample stage is located between the two ion sources, and the detection component is located on the rear side of the sample stage. The detection component includes an insulating isolation layer, and detection electrodes are arranged on the left and right sides of the insulating isolation layer.

[0015] Furthermore, the angle between the two ion sources is 120°, the detection component corresponds to the ion source one by one, the detection component includes a detection electrode, and is located directly opposite to the corresponding ion source, and the sample stage is located between the ion beam detection mechanism and the ion source.

[0016] Beneficial effects of the present invention:

[0017] The ion source of the present invention comprises an accelerating electrode and an electrostatic lens, and the diameter and distribution of the generated ion beam are controllable and adjustable, thereby ensuring that the same processing scheme produces the same processing effect. The present invention adopts a dual-source ion beam and cooperates with an accelerating electrode to generate an ion beam with high energy and high processing efficiency.

[0018] The device of the present invention comprises an ion beam current detection mechanism, which can detect the distribution of the ion beam current in a timely and rapid manner, thus providing a guarantee for rapidly optimizing the distribution of the ion beam.

[0019] The device of the present invention comprises a sample temperature control mechanism, which can ensure that the sample processing process is not thermally damaged. The sample temperature control mechanism is designed based on the Peltier effect and adopts a PID control module. The control method is simple and efficient, and can ensure that the user sets the target temperature according to the needs. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0021] Figure 1 It is a structural schematic diagram of the present invention;

[0022] Figure 2 is a schematic diagram of the structure of the ion source;

[0023] Figure 3 It is a structural schematic diagram of the ion beam current detection mechanism;

[0024] Figure 4 It is a structural schematic diagram of the sample temperature control mechanism;

[0025] Figure 5 It is a schematic diagram of the symmetrical structure of the ion source;

[0026] Figure 6 This is a schematic diagram of the structure of the ion source with an angle of 120°.

[0027] Vacuum chamber 1, ion source 2, sample temperature control mechanism 3, ion beam detection mechanism 4, protective shell 5, gas introduction channel 6, Penning ion gun 7, accelerating electrode 8, electrostatic lens 9, annular cathode 10, annular counter cathode 11, annular anode 12, permanent magnet 13, first electrostatic lens electrode 14, second electrostatic lens electrode 15, power module 16, second ammeter 17, supporting member 18, insulating isolation layer 19, detection electrode 20, first ammeter 21, PN type semiconductor module 22, flexible thermal conductive wire 23, thermal conductive member 24, cold water circulation device 25, sample stage 26, temperature sensitive sensor 27, power filter module 28, PID control module 29. DETAILED DESCRIPTION

[0028] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0029] Example 1

[0030] like Figure 1 , 2 As shown in Figure 5, a dual-source ion beam micro-nano polishing device with precise temperature control includes a vacuum chamber 1, in which an ion source 2, a sample temperature control mechanism 3 and an ion beam flow detection mechanism 4 are arranged. The ion source 2 is connected to a position adjustment module, which belongs to an existing structure, such as an XYZ three-axis linear module, etc., or other structures, as long as the position of the ion source 2 can be adjusted along the X, Y, and Z directions, thereby ensuring that the central axis of the ion source 2 is fine-tuned according to user needs.

[0031] The ion source 2 is a cylindrical structure, which includes a protective shell 5, in which a gas introduction channel 6 is arranged. A Penning ion gun 7, an accelerating electrode 8 and an electrostatic lens 9 are arranged in sequence at the gas introduction channel 6. The positively charged ions generated by the Penning ion gun 7 are accelerated by the accelerating electrode 8 and enter the electrostatic lens 9. The electrostatic lens 9 further adjusts the focus and distribution of the ion beam.

[0032] The Penning ion gun 7 includes an annular cathode 10 and an annular counter-cathode 11, an annular anode 12 is arranged between the annular cathode 10 and the annular counter-cathode 11, and the outer side of the annular anode 12 is wrapped with a cylindrical permanent magnet 13, which is used to generate a static magnetic field B0 along the axial direction of the ion source 2. The accelerating electrode 8 is located at the ion ejection hole end of the Penning ion gun 7, and the electrostatic lens 9 is located at the ion beam ejection hole end of the accelerating electrode 8. The electrostatic lens 9 includes a first electrostatic lens electrode 14, one side of the first electrostatic lens electrode 14 is close to the accelerating electrode 8, and the other side is provided with a second electrostatic lens electrode 15, and the accelerating electrode 8, the first electrostatic lens electrode 14 and the second electrostatic lens electrode 15 are all annular pole plates.

[0033] The Penning ion gun 7, the accelerating electrode 8 and the electrostatic lens 9 are all connected to the power module 16, which includes an ionization voltage Vd, an acceleration voltage Va and a focusing voltage Ve. One end of the ionization voltage Vd is connected to the annular anode 12 through an anode resistor, and the other end is connected to the annular cathode 10 and the annular counter cathode 11 through a cathode resistor. One end of the ionization voltage Vd is also provided with a second ammeter 17, which is used to measure the current of the discharge circuit of the ion source 2. The acceleration voltage Va is applied to the accelerating electrode 8, and the focusing voltage Ve is applied to the electrostatic lens 9. The ionization voltage Vd, the acceleration voltage Va and the focusing voltage Ve are all provided by an adjustable voltage power supply, which is convenient for adjusting the voltage as needed. The ionization voltage Vd, the acceleration voltage Va and the focusing voltage Ve are all set in common. The ionization voltage Vd of the Penning ion gun 7, the acceleration voltage Va of the accelerating electrode 8 and the focusing voltage Ve of the electrostatic lens 9 are regulated by the power module 16 to achieve the focusing, distribution and energy adjustment of the ion beam.

[0034] like Figure 4 As shown, the sample temperature control mechanism 3 includes a PN type semiconductor module 22. Based on the Peltier effect, the PN type semiconductor module 22 is composed of multiple layers of PN type semiconductor sheets, and has a hot end face and a cold end face. The cold end face is connected to the heat-conducting component 24 through a detachable flexible heat-conducting wire 23. The flexible heat-conducting wire 23 can be a thick copper stranded wire, etc. One end of the flexible heat-conducting wire 23 is connected to the cold end face of the PN type semiconductor module 22 through a screw, and the other end is connected to the heat-conducting component 24 through a screw. The heat-conducting component 24 is connected to the sample stage 26. The hot end face of the PN type semiconductor module 22 is connected to a cold water circulation device 25. The cold water circulation device 25 is located in the vacuum chamber 1 or the cold water circulation device 25 is located outside the vacuum chamber 1.

[0035] The sample stage 26 is used to carry the sample and is mounted on a sample stage 26 base that can rotate, tilt, and move in three dimensions to meet different processing requirements of the sample. The sample stage 26 base belongs to the prior art.

[0036] The cold end surface of the PN type semiconductor module 22 is also provided with a temperature sensitive sensor 27, and the PN type semiconductor module 22 is connected to the power filter module 28, and the power filter module 28 and the temperature sensitive sensor 27 are both connected to the PID control module 29. The temperature of the cold end surface is detected by the temperature sensitive sensor 27, and the target output current of the power filter module 28 is regulated by the PID control module 29. The power filter module 28 outputs the current to the PN type semiconductor module 22, thereby adjusting the temperature of the cold end surface.

[0037] The dual-source ion beam micro-nano polishing device also includes a control system and a host, the control system is a PLC controller, and the ion source 2, the sample temperature control mechanism 3, the ion beam flow detection mechanism 4 and the power module 16 are all connected to the control system. The host is a computer, etc., which is used to install the user-side software and the sample temperature control mechanism software, etc., and is responsible for controlling parameter transmission and submodule status display, etc.

[0038] Example 2

[0039] like Figure 5 As shown, if the vacuum chamber 1 is a rectangular structure, the ion source 2 includes two, the two ion sources 2 are symmetrically arranged on the left and right sides of the sample stage 26 (that is, located on the left and right sides of the vacuum chamber 1), the central axes of the ion beams emitted by the two ion sources 2 overlap or are parallel, the sample stage 26 is located between the two ion sources 2, and the ion beam flow detection mechanism 4 is located on the rear side of the sample stage 26 (located on the rear side of the vacuum chamber 1).

[0040] like Figure 1 and 3 As shown, the ion beam detection mechanism 4 includes a detection component, which is connected to a support member 18. The position of the detection component is adjusted by the support member 18. For example, the support member 18 can be displaced in three dimensions XYZ directions within the ion beam distribution area, and the ion beam size is measured point by point in each dimension to monitor the spatial distribution of the ion beam in real time. The support member 18 belongs to an existing structure, such as an XYZ three-axis linear module, etc., or other structures.

[0041] The detection assembly includes an insulating isolation layer 19, and detection electrodes 20 are fixed on both sides of the insulating isolation layer 19. The insulating isolation layer 19 and the detection electrode 20 are an integral structure. The side of the detection electrode 20 away from the insulating isolation layer 19 is a cup-shaped concave surface, and the cup-shaped concave surface faces the ion source 2, which is used to receive the positive ion beam emitted by the ion source 2. The ion beam current detection mechanism 4 also includes a first ammeter 21, which corresponds to the detection electrode 20 one by one. One end of the first ammeter 21 is connected to the detection electrode 20, and the other end is connected to the ground wire, which is used to measure the ion beam current.

[0042] Example 3

[0043] This embodiment is basically the same as embodiment 2, except that: Figure 6 As shown, if the vacuum chamber 1 has a regular hexagonal structure, the angle between the two ion sources 2 is 120°, the detection component corresponds to the ion source 2 one by one, the detection component includes a detection electrode, and is located directly opposite the corresponding ion source, the ion beam detection mechanism 4 is located directly opposite the corresponding ion source 2, and the sample stage 26 is located between the ion beam detection mechanism 4 and the ion source 2.

[0044] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principle of the present invention should be included in the protection scope of the present invention.

Claims

1. A dual-source ion beam micro-nano polishing device capable of precise temperature control, comprising a vacuum chamber, characterized in that: An ion source, a sample temperature control mechanism and an ion beam detection mechanism are arranged in the vacuum chamber. There are two ion sources, both facing the sample stage. The ion source includes a protective shell, a gas introduction channel is arranged in the protective shell, and a Penning ion gun, an accelerating electrode and an electrostatic lens are arranged in sequence at the gas introduction channel. The Penning ion gun, the accelerating electrode and the electrostatic lens are all connected to a power module, and the power module is used to regulate the ionization voltage Vd of the Penning ion gun, the acceleration voltage Va of the accelerating electrode and the focusing voltage Ve of the electrostatic lens. The ion beam detection mechanism is used to monitor the spatial distribution of the ion beam in real time. The sample temperature control mechanism is connected to the sample stage and is used to regulate the temperature of the sample stage.

2. The dual-source ion beam micro-nano polishing device capable of precise temperature control according to claim 1, characterized in that: The ion beam detection mechanism includes a detection component, which is connected to a support member. The position of the detection component is adjusted by the support member. The detection component includes a detection electrode corresponding to the ion source. The detection electrode faces the ion source and is used to receive the positively charged ion beam emitted by the ion source.

3. The dual-source ion beam micro-nano polishing device capable of precise temperature control according to claim 2, characterized in that: The ion beam current detection mechanism also includes a first ammeter, which corresponds to the detection electrode one by one. One end of the first ammeter is connected to the detection electrode, and the other end is connected to the ground wire, and is used to measure the ion beam current.

4. The dual-source ion beam micro-nano polishing device capable of precise temperature control according to claim 1, characterized in that: The sample temperature control mechanism comprises a PN type semiconductor module, the cold end face of the PN type semiconductor module is connected to the heat conducting component through a detachable flexible heat conducting wire, the heat conducting component is connected to the sample stage, and the hot end face of the PN type semiconductor module is connected to the cold water circulation device.

5. The dual-source ion beam micro-nano polishing device capable of precise temperature control according to claim 4, characterized in that: A temperature-sensitive sensor is also provided on the cold end surface of the PN-type semiconductor module. The PN-type semiconductor module is connected to the power filter module. Both the power filter module and the temperature-sensitive sensor are connected to the PID control module.

6. The dual-source ion beam micro-nano polishing device capable of precise temperature control according to claim 1, characterized in that: The Penning ion gun comprises an annular cathode and an annular counter-cathode, an annular anode is arranged between the annular cathode and the annular counter-cathode, and a cylindrical permanent magnet is arranged outside the annular anode.

7. The dual-source ion beam micro-nano polishing device capable of precise temperature control according to claim 6, characterized in that: The electrostatic lens comprises a first electrostatic lens electrode, one side of the first electrostatic lens electrode is close to the accelerating electrode, and the other side is provided with a second electrostatic lens electrode. Both the first electrostatic lens electrode and the second electrostatic lens electrode are annular pole plates.

8. The dual-source ion beam micro-nano polishing device capable of precise temperature control according to claim 2, characterized in that: The side of the detection electrode away from the insulating isolation layer is in a cup-shaped concave surface.

9. The dual-source ion beam micro-nano polishing device capable of precise temperature control according to claim 1, characterized in that: The two ion sources are symmetrically arranged on the left and right sides of the sample stage. The central axes of the ion beams emitted by the two ion sources overlap or are parallel. The sample stage is located between the two ion sources. The detection component is located on the rear side of the sample stage. The detection component also includes an insulating isolation layer. Detection electrodes are arranged on the left and right sides of the insulating isolation layer.

10. The dual-source ion beam micro-nano polishing device capable of precise temperature control according to claim 1, characterized in that: The angle between the two ion sources is 120°. The detection component corresponds to the ion source one by one. The detection component includes a detection electrode and is located directly opposite to the corresponding ion source. The sample stage is located between the ion beam detection mechanism and the ion source.

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