Slicing process, support plate and cutting chamber

Abstract

The invention provides a slicing process, a supporting plate and a cutting room, and the slicing process comprises the following steps: bonding a crystal bar on the supporting plate to form a crystal bar assembly; and placing the crystal bar assembly in a cutting chamber, and cutting a crystal bar of the crystal bar assembly by using a cutting device in the cutting chamber so as to cut the crystal bar into a wafer. Wherein the supporting plate comprises edge parts and a middle part, and the edge parts are distributed along the outer periphery of the middle part; the roughness of the edge part is larger than that of the middle part. The side wall face and the top wall face of the cutting cavity are both pretreated, so that the friction force of the side wall face and the top wall face of the cutting cavity is reduced, and then the adhesive force of silicon sludge on the side wall face and the top wall face of the cutting cavity is reduced. In the cutting process, a first spraying device is used for spraying the splashed silicon sludge so as to disperse the splashed silicon sludge; and / or, a second spraying device is used for spraying towards the side wall face and the top wall face of the cutting cavity, so that the silicon sludge attached to the side wall face and the top wall face of the cutting cavity is scattered.

Description

Technical Field

[0001] The present invention relates to the technical field of silicon wafer cutting, and in particular to a slicing process, a support plate and a cutting chamber. Background Art

[0002] During the cutting process of the slicers currently on the market, silicon powder or silicon mud is easy to adhere to the cutting chamber and then slowly fall off; if it falls on the wire mesh, it will affect the stability of the steel wire, easily causing an increase in the defective ratio of chip thickness, TTV, etc., affecting the product yield.

[0003] In addition, during the die bonding process, there is often too much glue overflowing from the edge of the plate, resulting in insufficient glue on the contact surface between the silicon rod and the plastic plate, or even a partial empty glue phenomenon on the contact surface. This can easily cause problems such as hanging wires, falling fragments, and dirty chamfers, which not only increases wire usage and affects costs, but also reduces product output and yield to a greater extent. Summary of the invention

[0004] The main purpose of the present invention is to provide a slicing process, a support plate and a cutting chamber to improve the production yield of wafers.

[0005] In order to achieve the above-mentioned object, according to one aspect of the present invention, a slicing process is provided, which includes: bonding a crystal rod to a support plate to form a crystal rod assembly; placing the crystal rod assembly in a cutting chamber, and using a cutting device in the cutting chamber to cut the crystal rod of the crystal rod assembly to cut the crystal rod into wafers. Wherein, the support plate includes an edge portion and a middle portion, and the edge portion is distributed along the outer periphery of the middle portion; the roughness of the edge portion is greater than the roughness of the middle portion. Wherein, the side wall surface and the top wall surface of the cutting chamber are pre-treated to reduce the friction force of the side wall surface and the top wall surface of the cutting chamber, thereby reducing the adhesion of silicon mud on the side wall surface and the top wall surface of the cutting chamber. During the cutting process, a first spraying device is used to spray toward the splashing silicon mud to disperse the splashing silicon mud; and / or, a second spraying device is used to spray toward the side wall surface and the top wall surface of the cutting chamber to disperse the silicon mud attached to the side wall surface and the top wall surface of the cutting chamber.

[0006] Further, there are two edge portions, and the middle portion is arranged between the two edge portions. Alternatively, the edge portion is arranged around the middle portion.

[0007] Furthermore, the roughness of the edge portion ranges from 10 μm to 15 μm.

[0008] Furthermore, the roughness of the middle portion ranges from 6 μm to 8 μm.

[0009] Furthermore, the pretreatment includes polishing and coating a hydrophobic layer; wherein the hydrophobic layer is a hydrophobic material.

[0010] Further, coating the hydrophobic layer includes applying a wax film and / or spraying an oil film.

[0011] Furthermore, the liquid sprayed by the first spray device is the same as the cutting fluid.

[0012] Furthermore, the liquid sprayed by the second spray device is the same as the cutting fluid.

[0013] Furthermore, the second spray device comprises a spray pipe, a pipe wall of which is provided with a plurality of spray parts distributed along the axial direction thereof, and each spray part is used for spraying liquid.

[0014] Furthermore, the ratio of the adhesive to the curing agent in the adhesive glue between the crystal rod and the support plate is a:b, the value range of a is 0.9 to 1, and the value range of b is 1 to 1.3.

[0015] Furthermore, the content of the adhesive in the adhesive glue between the crystal rod and the support plate ranges from 30 g to 80 g.

[0016] Furthermore, the content of the curing agent in the adhesive glue between the crystal rod and the support plate ranges from 30 g to 80 g.

[0017] According to another aspect of the present invention, there is provided a support plate for bonding to a crystal rod and suitable for the above-mentioned slicing process.

[0018] According to another aspect of the present invention, a cutting chamber is provided, which is suitable for the above-mentioned slicing process; the cutting chamber includes a first spray device and / or a second spray device.

[0019] Applying the technical solution of the present invention, the slicing process includes: bonding the crystal rod to a support plate to form a crystal rod assembly; placing the crystal rod assembly in a cutting chamber, and using a cutting device in the cutting chamber to cut the crystal rod of the crystal rod assembly to cut the crystal rod into wafers.

[0020] The support plate includes an edge portion and a middle portion, and the edge portion is distributed along the outer periphery of the middle portion; the roughness of the edge portion is greater than that of the middle portion, so as to increase the glue flow resistance of the edge portion, so that the glue mainly expands in the middle portion, and the glue is not easy to overflow to the edge portion, thereby reducing the amount of glue overflow at the edge of the support plate; in this way, not only can it be ensured that there is enough glue in contact with the crystal rod, and the glue is evenly distributed on the bonding surface of the crystal rod and the support plate, reducing the empty glue phenomenon on the bonding surface, that is, reducing the empty glue phenomenon between the support plate and the crystal rod, ensuring that the crystal rod and the wafer do not fall off during the slicing process, but also can reduce or avoid the contamination caused by overflowing glue to the edge portion.

[0021] Among them, the side walls and top walls of the cutting chamber are pre-treated to reduce the friction of the side walls and top walls of the cutting chamber, thereby reducing the adhesion of silicon mud on the side walls and top walls of the cutting chamber, thereby avoiding or reducing the adhesion of silicon mud on the side walls and top walls of the cutting chamber, thereby avoiding or reducing the formation of a large volume of silicon mud on the side walls and top walls of the cutting chamber, thereby avoiding or reducing a large volume of silicon mud falling into the collecting component, thereby avoiding or reducing the phenomenon of a large volume of silicon mud clogging the filter holes of the filter component.

[0022] In the cutting process, a first spraying device is used to spray toward the splashing silicon mud to disperse the splashing silicon mud, so as to reduce the volume of the splashing silicon mud, thereby avoiding or reducing the large volume of silicon mud directly falling into the collecting component, thereby avoiding or reducing the phenomenon that the large volume of silicon mud blocks the filter holes of the filter component. And / or, a second spraying device is used to spray toward the side wall and top wall of the cutting chamber to disperse the silicon mud attached to the side wall and top wall of the cutting chamber, thereby reducing the volume of the silicon mud attached to the side wall and top wall of the cutting chamber and falling; in this way, it is possible to avoid or reduce the large volume of silicon mud on the side wall and top wall of the cutting chamber falling into the collecting component, thereby avoiding or reducing the phenomenon that the large volume of silicon mud blocks the filter holes of the filter component.

[0023] By adopting the slicing process of the present application, it is possible to avoid or reduce the silicon mud falling from the top wall of the cutting chamber, and further avoid or reduce the risk of the silicon mud falling from the top wall of the cutting chamber falling on the cutting wire net, thereby avoiding or reducing the influence of the silicon mud falling on the cutting wire net on the slicing process, improving the cutting stability of the cutting wire, reducing the loss of the cutting wire caused by wire breakage, and reducing the uneven thickness of the chip itself and poor TTV, thereby improving the production yield of the chip. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] The drawings constituting a part of the present application are used to provide a further understanding of the present invention. The exemplary embodiments of the present invention and their descriptions are used to explain the present invention and do not constitute an improper limitation of the present invention. In the drawings:

[0025] Figure 1 A schematic structural diagram of a crystal rod assembly according to the present invention is shown;

[0026] Figure 2 A schematic diagram showing the structure of a crystal rod being cut according to the present invention is shown;

[0027] Figure 3 A schematic structural diagram of a support plate according to the present invention is shown;

[0028] Figure 4 A schematic diagram of a line coating curve of the glue according to the present invention is shown.

[0029] The above drawings include the following reference numerals:

[0030] 10. crystal rod assembly; 11. crystal rod; 12. support plate; 121. edge portion; 122. middle portion; 13. support seat;

[0031] 20. Cutting device; 30. Cutting fluid injection component. DETAILED DESCRIPTION

[0032] It should be noted that, in the absence of conflict, the embodiments and features in the embodiments of the present application can be combined with each other. The present invention will be described in detail below with reference to the accompanying drawings and in combination with the embodiments.

[0033] It should be noted that the following detailed descriptions are illustrative and are intended to provide further explanation of the present application. Unless otherwise specified, all technical and scientific terms used herein have the same meanings as those commonly understood by those skilled in the art to which the present application belongs.

[0034] It should be noted that the terms used herein are only for describing specific embodiments and are not intended to limit the exemplary embodiments according to the present application. As used herein, unless the context clearly indicates otherwise, the singular form is also intended to include the plural form. In addition, it should be understood that when the terms "comprise" and / or "include" are used in this specification, it indicates the presence of features, steps, operations, devices, components and / or combinations thereof.

[0035] The present invention provides a slicing process, please refer to Figure 1 and Figure 2 The slicing process includes: bonding the crystal rod 11 to the support plate 12 to form a crystal rod assembly 10, that is, the crystal rod assembly 10 includes the bonded crystal rod 11 and the support plate 12; placing the crystal rod assembly 10 in a cutting chamber, and using a cutting device 20 in the cutting chamber to cut the crystal rod 11 of the crystal rod assembly 10 to cut the crystal rod 11 into wafers.

[0036] Specifically, the slicing process further includes bonding the support plate 12 to the support seat 13 , so that the crystal rod assembly 10 further includes the support seat 13 bonded to the support plate 12 .

[0037] Specifically, during the process of transferring or transporting the crystal ingot assembly 10 , the clamping device clamps the support seat 13 to drive the crystal ingot assembly 10 to move.

[0038] In the specific cutting process, the cutting device 20 will cut the support plate 12, but will not cut through the support plate 12. Optionally, the cutting depth of the support plate 12 by the cutting device 20 is generally 5 mm to 12 mm.

[0039] Specifically, the crystal rod 11 is a silicon rod, and the wafer is a silicon wafer.

[0040] Optionally, the support plate 12 is a plastic plate.

[0041] Optionally, the support seat 13 is a dovetail seat.

[0042] Optionally, the support base 13 is made of metal; for example, the support base 13 is made of iron.

[0043] In this application, if Figure 3 As shown, the support plate 12 includes an edge portion 121 and a middle portion 122 , wherein the edge portion 121 is distributed along the outer periphery of the middle portion 122 ; the roughness of the edge portion 121 is greater than that of the middle portion 122 .

[0044] Optionally, the roughness of the edge portion 121 is increased while the roughness of the middle portion 122 remains unchanged, so that the roughness of the edge portion 121 is greater than the roughness of the middle portion 122 .

[0045] Specifically, the crystal rod 11 and the support plate 12 are bonded with glue; the crystal rod 11 is bonded to the middle part 122 of the support plate 12. By making the roughness of the edge part 121 greater than the roughness of the middle part 122, the resistance of the glue flow in the edge part 121 is increased, so that the glue mainly spreads in the middle part 122, and the glue is not easy to overflow to the edge part 121, and the amount of glue overflow at the edge of the support plate 12 is reduced; in this way, not only can it be ensured that there is enough glue in contact with the crystal rod 11, but also the glue is evenly distributed on the bonding surface of the crystal rod 11 and the support plate 12, and the empty glue phenomenon on the bonding surface is reduced, that is, the empty glue phenomenon between the support plate 12 and the crystal rod 11 is reduced, and the crystal rod 11 and the wafer are ensured not to fall off during the slicing process, but also the contamination caused by the overflow of glue to the edge can be reduced or avoided.

[0046] Alternatively, if Figure 3 As shown, there are two edge portions 121, and the middle portion 122 is arranged between the two edge portions 121. Alternatively, the edge portion 121 is arranged around the middle portion 122.

[0047] Optionally, the roughness of the edge portion 121 ranges from 10 μm to 15 μm.

[0048] Optionally, the roughness of the middle portion 122 ranges from 6 μm to 8 μm.

[0049] Optionally, the thickness of the support plate 12 ranges from 10 mm to 15 mm.

[0050] Optionally, the hardness of the support plate 12 ranges from 75 to 89; the hardness in the present application refers to the Shore hardness.

[0051] Optionally, the support plate 12 is a hollow plate, that is, the hollow plate has a hollow cavity to ensure the subsequent degumming effect; the thickness between the plate surface of the hollow plate and the cavity wall is 2mm to 5mm, and the thickness between the outer wall of the hollow plate and the cavity wall is 2mm to 5mm.

[0052] Specifically, the bonding glue between the crystal rod 11 and the support plate 12 is the first glue. Optionally, the first glue includes an adhesive and a curing agent; the ratio of the adhesive to the curing agent in the first glue is a:b, a is in the range of 0.9 to 1, and b is in the range of 1 to 1.3; the content of the adhesive in the first glue is in the range of 30g to 80g, and the content of the curing agent in the first glue is in the range of 30g to 80g.

[0053] Optionally, the ratio of the adhesive to the curing agent in the first glue is 1:1.

[0054] Specifically, the curing time of the first glue is increased by reducing the content of the curing agent in the first glue. Optionally, the curing time is greater than 2.5 hours.

[0055] Optionally, the shear force of the first glue ranges from 17MPa to 22MPa; the water absorption rate of the first glue is less than or equal to 2%; the Vicat softening point of the first glue is greater than or equal to 45 degrees; the hardness of the first glue ranges from 78 to 90.

[0056] Specifically, the bonding glue between the support seat 13 and the support plate 12 is the second glue. Optionally, the second glue includes an adhesive and a curing agent; the ratio of the adhesive to the curing agent in the second glue is c:d, the value range of c is 0.9 to 1, and the value range of d is 1 to 1.3; the value range of the content of the adhesive in the second glue is 20g to 60g, and the value range of the content of the curing agent in the second glue is 20g to 60g.

[0057] Optionally, the ratio of the adhesive to the curing agent in the second glue is 1:1.

[0058] Optionally, the shear force of the second glue ranges from 17MPa to 22MPa; the water absorption rate of the second glue is less than or equal to 2%; the Vicat softening point of the second glue is greater than or equal to 45 degrees; the hardness of the second glue ranges from 78 to 90.

[0059] It should be noted that the shear force of the glue is positively correlated with the adhesive strength of the glue.

[0060] Optionally, the first glue between the crystal rod 11 and the support plate 12 is applied by line coating, and the specific line coating pattern is as follows: Figure 4 As shown in the curve.

[0061] Optionally, the second glue between the support seat 13 and the support plate 12 is applied by line coating, and the specific line coating pattern is as follows: Figure 4 As shown in the curve.

[0062] In the present application, the side walls and top walls of the cutting chamber are pre-treated to reduce the friction of the side walls and top walls of the cutting chamber, thereby reducing the adhesion of silicon mud on the side walls and top walls of the cutting chamber, and increasing the isolation effect of the side walls and top walls of the cutting chamber on the silicon mud.

[0063] During the specific cutting process, silicon mud will be generated at the cutting point of the crystal rod 11, and the silicon mud will splash around, and the splashed silicon mud will splash onto the side wall and / or top wall of the cutting chamber; wherein, when cutting the crystal rod 11, in order to ensure the processing accuracy and improve the surface quality of the chip, an auxiliary cutting fluid is required to lubricate and flush the cutting surface to form silicon mud; the silicon mud includes silicon powder and diamond abrasives generated during the cutting process.

[0064] A cutting liquid collecting component is provided below the cutting device 20. The cutting liquid falling from the cutting device 20 during the cutting process falls into the collecting component. The cutting liquid falling into the collecting component contains impurities such as silicon powder and diamond abrasives. The cutting liquid in the collecting component is filtered out of impurities by the filtering component and then enters the cutting liquid injection component 30 again to realize the recycling of the cutting liquid. The cutting liquid injection component 30 is used to spray the cutting liquid onto the cutting surface.

[0065] Silica mud will also fall into the cutting fluid in the collecting component and be filtered out through the filtering component; if the volume of the silica mud is large and the volume of silica mud increases, it is likely to cause the filter holes of the filtering component to be blocked, thereby causing the cutting fluid circuit to be disconnected, affecting the circulation of the cutting fluid and further affecting the cutting operation.

[0066] In the prior art, the splashed silicon mud adheres to the side wall and / or top wall of the cutting chamber. As more and more silicon mud adheres to the side wall and top wall of the cutting chamber, the volume of the silicon mud increases. When the weight of the silicon mud with increased volume reaches a certain level, it will fall from the side wall and top wall of the cutting chamber and fall into the collecting component. The large volume of silicon mud easily causes the filter holes of the filter component to be blocked. The present application reduces the friction of the side wall and top wall of the cutting chamber to reduce the adhesion of silicon mud on the side wall and top wall of the cutting chamber, thereby avoiding or reducing the adhesion of silicon mud on the side wall and top wall of the cutting chamber, thereby avoiding or reducing the formation of a large volume of silicon mud on the side wall and top wall of the cutting chamber, thereby avoiding or reducing the large volume of silicon mud falling into the collecting component, thereby avoiding or reducing the phenomenon of large volume of silicon mud blocking the filter holes of the filter component.

[0067] Specifically, the pretreatment includes polishing and coating a hydrophobic layer; wherein the hydrophobic layer is a dustproof and hydrophobic material.

[0068] Specifically, coating the hydrophobic layer includes applying a wax film and / or spraying an oil film.

[0069] Optionally, the side wall and top wall of the cutting chamber are made of stainless steel.

[0070] In the present application, during the cutting process, a first spraying device is used to spray toward the splashing silicon mud to disperse the splashing silicon mud.

[0071] The splashed silicon mud will also directly fall into the collection component, and there will also be large silicon mud in the splashed silicon mud. The present application disperses the splashed silicon mud to reduce the volume of the splashed silicon mud, thereby avoiding or reducing the large silicon mud from directly falling into the collection component, thereby avoiding or reducing the phenomenon of large silicon mud clogging the filter holes of the filter component.

[0072] Specifically, the liquid sprayed by the first spray device is the same as the cutting liquid, and the liquid sprayed by the first spray device falls into the collecting component.

[0073] Specifically, the liquid source of the first spray device may be an additional liquid source, or may be the cutting liquid filtered by a filter component.

[0074] Specifically, the liquid sprayed by the first spray device is in a divergent shape.

[0075] In the present application, a second spray device is used to spray toward the side walls and top walls of the cutting chamber to disperse the silicon mud attached to the side walls and top walls of the cutting chamber, thereby reducing the volume of the silicon mud attached to the side walls and top walls of the cutting chamber and causing it to fall off; in this way, it is possible to avoid or reduce the large volume of silicon mud on the side walls and top walls of the cutting chamber from falling into the collecting component, thereby avoiding or reducing the phenomenon of large volume of silicon mud clogging the filter holes of the filter component.

[0076] Specifically, the liquid sprayed by the second spray device is the same as the cutting liquid, and the liquid sprayed by the second spray device falls into the collecting component.

[0077] Specifically, the liquid source of the second spray device may be an additional liquid source, or may be the cutting liquid filtered by a filter component.

[0078] Specifically, the liquid sprayed by the second spray device is in a divergent shape.

[0079] Specifically, the second spray device includes a spray pipe, and a plurality of spray parts distributed along the axial direction of the spray pipe are formed on the pipe wall of the spray pipe, and each spray part is used for spraying liquid; and the liquid sprayed by each spray part is in a divergent shape.

[0080] Optionally, during the cutting process, the second spray device is used to spray toward the side wall and the top wall of the cutting chamber. The second spray device can also be used to spray toward the side wall and the top wall of the cutting chamber before or after cutting.

[0081] Optionally, the liquid flow rate of the second spraying device is 50 L / min to 300 L / min.

[0082] Optionally, the spray pressure differential of the second spray device is 0.1 MPa to 0.2 MPa.

[0083] In the present application, reducing the amount of the first glue and increasing the weight of the pressure block can further reduce the overflow of the first glue and reduce the production cost.

[0084] Optionally, the amount of the first glue is reduced by 2 g to 5 g.

[0085] In the present application, the cutting device 20 uses a cutting wire for cutting, and the cutting wire is a diamond cutting wire.

[0086] In a specific cutting process, the crystal rod assembly 10 is placed above the cutting line, and the crystal rod assembly 10 is pressed down for cutting.

[0087] Optionally, to ensure the stability of the cutting wire net, the cutting wire is provided with 2 to 6 hooks.

[0088] Optionally, the cutting wire includes but is not limited to carbon steel and tungsten wire; the main wire diameter of the cutting wire is 18μm to 40μm; the cutting edge height of the cutting wire is 2μm to 8μm; the coating thickness of the cutting wire is 0.5μm to 4μm; the cutting edge rate of the cutting wire is 10 / mm to 250 / mm.

[0089] Optionally, the surface tension of the cutting fluid ranges from 18mN / m to 30mN / m; the pH value of the cutting fluid ranges from 5 to 7; the viscosity of the cutting fluid ranges from 35 to 48; the conductivity of the cutting fluid ranges from 1 to 50, which is diluted 600 times.

[0090] Optionally, the amount of cutting fluid is 3L to 5L; the height of the mortar tube is 3mm to 15mm, and the width is 5mm to 20mm; the cutting fluid flow rate is 100L / min to 400L / min.

[0091] Optionally, the cutting line speed may be appropriately reduced to reduce the splashing of mortar.

[0092] Optionally, the maximum line speed is 1500m / min to 3000m / min.

[0093] In this application, after cutting, degumming is required.

[0094] Optionally, the degumming time is 600s to 1100s; the degumming temperature is 50 degrees to 70 degrees.

[0095] Specifically, the crystal rod assembly 10 is rinsed and sprayed before debonding to reduce the adhesion of cutting fluid and silicon powder; the spraying time is 20s to 300s.

[0096] In the prior art, silicon mud falling from the top wall of the cutting chamber may fall on the cutting wire net, which will affect the slicing process, affect the cutting stability of the cutting wire, and easily cause uneven thickness of the wafer itself. The slicing process of the present application can avoid or reduce the silicon mud falling from the top wall of the cutting chamber, thereby avoiding or reducing the risk of silicon mud falling from the top wall of the cutting chamber falling on the cutting wire net, thereby avoiding or reducing the impact of silicon mud falling on the cutting wire net on the slicing process, improving the cutting stability of the cutting wire, and reducing the loss of the cutting wire caused by wire breakage, and can also reduce the phenomenon of uneven thickness of the wafer itself and poor TTV.

[0097] If the thickness of the wafer itself is uneven, the wafer is a defective product; therefore, the slicing process of the present application can improve the production yield of the wafer.

[0098] The present invention further provides a support plate 12, which is used to be bonded to the crystal rod 11 and is suitable for the above-mentioned slicing process.

[0099] The present invention also provides a cutting chamber, which is suitable for the above-mentioned slicing process.

[0100] Specifically, the cutting chamber includes a cutting chamber, a cutting device 20, a first spray device, a second spray device, a cutting liquid injection component, a collecting component, and a filtering component; the cutting device 20, the first spray device, the second spray device, the cutting liquid injection component 30, the collecting component, and the filtering component are all arranged in the cutting chamber.

[0101] From the above description, it can be seen that the above embodiments of the present invention achieve the following technical effects:

[0102] In the slicing process provided by the present invention, it includes: bonding the crystal rod 11 to the support plate 12 to form a crystal rod assembly 10; placing the crystal rod assembly 10 in a cutting chamber, and using a cutting device 20 in the cutting chamber to cut the crystal rod 11 of the crystal rod assembly 10 to cut the crystal rod 11 into wafers.

[0103] Among them, the support plate 12 includes an edge portion 121 and a middle portion 122, and the edge portion 121 is distributed along the outer periphery of the middle portion 122; the roughness of the edge portion 121 is greater than the roughness of the middle portion 122, so as to increase the glue flow resistance of the edge portion 121, so that the glue mainly expands in the middle portion 122, and the glue is not easy to overflow to the edge portion 121, thereby reducing the amount of glue overflow at the edge of the support plate 12; in this way, it can not only ensure that there is enough glue in contact with the crystal rod 11, but also make the glue evenly distributed on the bonding surface of the crystal rod 11 and the support plate 12, thereby reducing the empty glue phenomenon on the bonding surface, that is, reducing the empty glue phenomenon between the support plate 12 and the crystal rod 11, ensuring that the crystal rod 11 and the wafer do not fall off during the slicing process, but also can reduce or avoid the contamination caused by overflowing glue to the edge portion.

[0104] Among them, the side walls and top walls of the cutting chamber are pre-treated to reduce the friction of the side walls and top walls of the cutting chamber, thereby reducing the adhesion of silicon mud on the side walls and top walls of the cutting chamber, thereby avoiding or reducing the adhesion of silicon mud on the side walls and top walls of the cutting chamber, thereby avoiding or reducing the formation of a large volume of silicon mud on the side walls and top walls of the cutting chamber, thereby avoiding or reducing a large volume of silicon mud falling into the collecting component, thereby avoiding or reducing the phenomenon of a large volume of silicon mud clogging the filter holes of the filter component.

[0105] In the cutting process, a first spraying device is used to spray toward the splashing silicon mud to disperse the splashing silicon mud, so as to reduce the volume of the splashing silicon mud, thereby avoiding or reducing the large volume of silicon mud directly falling into the collecting component, thereby avoiding or reducing the phenomenon that the large volume of silicon mud blocks the filter holes of the filter component. And / or, a second spraying device is used to spray toward the side wall and top wall of the cutting chamber to disperse the silicon mud attached to the side wall and top wall of the cutting chamber, thereby reducing the volume of the silicon mud attached to the side wall and top wall of the cutting chamber and falling; in this way, it is possible to avoid or reduce the large volume of silicon mud on the side wall and top wall of the cutting chamber falling into the collecting component, thereby avoiding or reducing the phenomenon that the large volume of silicon mud blocks the filter holes of the filter component.

[0106] By adopting the slicing process of the present application, it is possible to avoid or reduce the silicon mud falling from the top wall of the cutting chamber, and further avoid or reduce the risk of the silicon mud falling from the top wall of the cutting chamber falling on the cutting wire net, thereby avoiding or reducing the influence of the silicon mud falling on the cutting wire net on the slicing process, improving the cutting stability of the cutting wire, reducing the loss of the cutting wire caused by wire breakage, and reducing the uneven thickness of the chip itself and poor TTV, thereby improving the production yield of the chip.

[0107] It should be noted that the terms "first", "second", etc. in the specification and claims of the present application and the above-mentioned drawings are used to distinguish similar objects, and are not necessarily used to describe a specific order or sequence. It should be understood that the data used in this way can be interchangeable where appropriate, so that the embodiments of the present application described herein can be implemented in an order other than those illustrated or described herein, for example. In addition, the terms "including" and "having" and any of their variations are intended to cover non-exclusive inclusions, for example, a process, method, system, product or device that includes a series of steps or units is not necessarily limited to those steps or units that are clearly listed, but may include other steps or units that are not clearly listed or inherent to these processes, methods, products or devices.

[0108] For ease of description, spatially relative terms such as "above", "above", "on the upper surface of", "above", etc. may be used here to describe the spatial positional relationship between a device or feature and other devices or features as shown in the figure. It should be understood that spatially relative terms are intended to include different orientations of the device in use or operation in addition to the orientation described in the figure. For example, if the device in the accompanying drawings is inverted, the device described as "above other devices or structures" or "above other devices or structures" will be positioned as "below other devices or structures" or "below other devices or structures". Thus, the exemplary term "above" can include both "above" and "below". The device can also be positioned in other different ways (rotated 90 degrees or in other orientations), and the spatially relative descriptions used here are interpreted accordingly.

[0109] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. For those skilled in the art, the present invention may have various modifications and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention shall be included in the protection scope of the present invention.

Claims

1. A slicing process, characterized in that: include: The crystal ingot (11) is bonded to a support plate (12) to form a crystal ingot assembly (10); wherein the support plate (12) comprises an edge portion (121) and a middle portion (122), the edge portion (121) being distributed along the outer periphery of the middle portion (122); and the roughness of the edge portion (121) is greater than the roughness of the middle portion (122); Placing the crystal rod assembly (10) in a cutting chamber, and using a cutting device (20) in the cutting chamber to cut a crystal rod (11) of the crystal rod assembly (10), so as to cut the crystal rod (11) into wafers; Wherein, the side wall surface and the top wall surface of the cutting chamber are pre-treated to reduce the friction force of the side wall surface and the top wall surface of the cutting chamber, thereby reducing the adhesion of silicon mud on the side wall surface and the top wall surface of the cutting chamber; During the cutting process, a first spray device is used to spray toward the splashing silicon mud to disperse the splashing silicon mud; and / or a second spray device is used to spray toward the side wall and top wall of the cutting chamber to disperse the silicon mud attached to the side wall and top wall of the cutting chamber.

2. The slicing process according to claim 1, characterized in that: There are two edge portions (121), and the middle portion (122) is arranged between the two edge portions (121); or The edge portion (121) is arranged around the middle portion (122).

3. The slicing process according to claim 1 or 2, characterized in that: The roughness of the edge portion (121) ranges from 10 μm to 15 μm; and / or The roughness of the middle portion (122) ranges from 6 μm to 8 μm.

4. The slicing process according to claim 1, characterized in that: The pretreatment includes polishing and coating a hydrophobic layer; Wherein, the hydrophobic layer is a hydrophobic material.

5. The slicing process according to claim 4, characterized in that: The coating of the hydrophobic layer includes applying a wax film and / or spraying an oil film.

6. The slicing process according to claim 1, characterized in that: The liquid sprayed by the first spraying device is the same as the cutting fluid; and / or The liquid sprayed by the second spraying device is the same as the cutting liquid.

7. The slicing process according to claim 1, characterized in that: The second spray device comprises a spray pipe, a pipe wall of which is provided with a plurality of spray parts distributed along the axial direction thereof, and each of the spray parts is used for spraying liquid.

8. The slicing process according to claim 1, characterized in that: The ratio of the adhesive to the curing agent in the adhesive glue between the crystal rod (11) and the support plate (12) is a:b, the value range of a is 0.9 to 1, and the value range of b is 1 to 1.3; and / or The content of the adhesive in the adhesive glue between the crystal rod (11) and the support plate (12) is in the range of 30 g to 80 g; and / or The content of the curing agent in the adhesive glue between the crystal rod (11) and the support plate (12) ranges from 30 g to 80 g.

9. A support plate, characterized in that: Used for bonding with a crystal rod (11), and suitable for the slicing process described in any one of claims 1 to 8.

10. A cutting chamber, characterized in that: Applicable to the slicing process described in any one of claims 1 to 8, the cutting chamber comprises a first spray device and / or a second spray device.

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