Low-energy PVD (Physical Vapor Deposition) coating device and method

Abstract

The low-energy PVD coating device comprises a sputtering cathode, the sputtering cathode is loaded with a target material, the loading target material and a substrate are oppositely arranged, and the loading target material generates film material particles under the action of an electric field of the sputtering cathode; the energy adjusting plate is positioned between the substrate and the sputtering cathode and is provided with a via hole; the collision particle pipeline is connected with the collision particle source, the collision particle source is internally provided with preset inert gas, a gas outlet end opening of the collision particle pipeline is formed in the energy adjusting plate, and the conveyed inert gas moves in the direction of loading the target material; the kinetic energy of the inert gas is smaller than that of the film material particles. As the inert gas has a relatively fixed flowing direction and is opposite to the incident direction of the film material particles, the energy of the film material particles is reduced from a high-energy state to a state close to the energy state of the just emitted gas particles through energy exchange of elastic collision, so that the film material particles with very low energy are obtained, and stable low-energy deposition coating is realized.

Description

Technical Field

[0001] The present invention relates to the field of low-energy film coating, and in particular to a low-energy PVD film coating device and method. Background Art

[0002] PVD (Physical Vapor Deposition) technology refers to the technology of using physical methods to vaporize the surface of the material source into gaseous atoms or molecules, or partially ionize into ions under vacuum conditions, and deposit a thin film with special functions on the surface of the substrate through a low-pressure gas or plasma process. PVD coating technology is mainly divided into three categories: vacuum evaporation coating, vacuum sputtering coating and vacuum ion coating. The main methods of physical vapor deposition are: vacuum evaporation, sputtering coating, arc plasma coating, ion coating and molecular beam epitaxy. The corresponding vacuum coating equipment includes vacuum evaporation coating machine, vacuum sputtering coating machine and vacuum ion coating machine.

[0003] Organic materials or some materials with special physical properties, such as low melting points, sensitive to high-energy particle bombardment or temperature, may change their physical properties due to excessively high temperatures during PVD, thus failing to achieve the desired effect. Sputtering coating has high energy, and although it can solve the problems of uniformity and bonding strength, the high film-forming energy and high temperature can easily damage the substrate, which becomes an obstacle to the research and development of new materials. Summary of the invention

[0004] The object of the present invention is to provide a low-energy PVD coating device and method, which can solve the problem of damage to the substrate caused by excessive coating energy.

[0005] The embodiment of the present invention is achieved as follows:

[0006] A low-energy PVD coating device according to an embodiment of the present application includes:

[0007] A sputtering cathode, the sputtering cathode is used to generate an electric field and is loaded with a target material, the loaded target material is arranged opposite to the substrate to be coated, and the loaded target material generates film material particles moving along a first direction under the action of the electric field of the sputtering cathode, and the first direction is a direction toward the substrate;

[0008] An energy regulating plate, the energy regulating plate is located between the substrate and the sputtering cathode and has a through hole for the film material particles to pass through;

[0009] A collision particle pipeline, the collision particle pipeline is used to be connected to a collision particle source, the collision particle source has a preset inert gas inside, the gas outlet port of the collision particle pipeline is arranged on the energy adjustment plate and the transported inert gas moves along a second direction, the second direction is the direction toward the target material, there is a preset angle between the first direction and the second direction, the range of the preset angle is 90°-270°; the kinetic energy of the inert gas is less than the kinetic energy of the film material particles.

[0010] In a possible implementation, the coating device further includes a cooling fluid pipeline, wherein the cooling fluid pipeline is used to be connected to a cooling source, wherein the cooling source has cooling fluid inside, and the cooling fluid pipeline is connected to the energy regulating plate.

[0011] In a possible embodiment, the energy adjustment plate is provided with a plurality of via holes which are evenly spaced along the width direction of the energy adjustment plate, each of the via holes has a trapezoidal cross-section along the width direction of the energy adjustment plate, and the dimension of each of the via holes facing the substrate is larger than its dimension facing the target material.

[0012] In a possible implementation manner, a plurality of cooling fluid conduits are provided, and at least one cooling fluid conduit is provided between every two through holes, and each cooling fluid conduit is extended along the length direction of the energy adjustment plate.

[0013] In a possible implementation manner, the distance between the energy adjustment plate and the substrate is shorter than the distance between the energy adjustment plate and the target.

[0014] In a possible implementation manner, the gas outlet port of the collision particle pipeline is arranged on a side of the energy adjustment plate facing the substrate.

[0015] In a possible embodiment, the coating device also includes a plurality of gas guide plates, which are arranged adjacent to each other in sequence and connected to form a guide cavity with openings at both ends, and the outlet ports of the energy adjustment plate, the sputtering cathode and the collision particle pipeline are located in the guide cavity.

[0016] In a possible implementation, the sputtering cathode includes a target body and a magnet pair, wherein the magnet is disposed in the target body and is used to be connected to a negative electrode of an external power source to generate an electric field, and the target material is disposed on the target body and is located within the electric field.

[0017] In a possible implementation manner, the sputtering cathode further includes a magnetic pole shoe, which is disposed in the target body and connected to the magnet pair.

[0018] In a second aspect, a low-energy PVD coating method according to an embodiment of the present application comprises:

[0019] An electric field of a set intensity is generated by a film-plating cathode, so that a target material located within the influence range of the electric field generates film material particles moving toward the substrate, and the film material particles are deposited on the substrate through a via hole located between the substrate and the sputtering cathode;

[0020] An inert gas is transported toward the target material through a collision particle pipeline, and the kinetic energy of the inert gas is less than the kinetic energy of the film material particles;

[0021] A cooling fluid is transported through the cooling fluid pipeline to exchange heat with the energy adjustment plate and the film material particles passing through the energy adjustment plate.

[0022] In a possible implementation, the ratio of the vias to the plate area of ​​the energy regulating plate is determined by a preset number of film material particles incident on all the vias per unit time, and the preset number of particles is determined by a preset amount of coating particles on the substrate per unit time in the coating process.

[0023] The beneficial effects of the embodiments of the present invention are: the inert gas has a relatively fixed flow direction, and is opposite to the incident direction of the film material particles, so that when the film material particles reach the through-hole position of the energy adjustment plate, the energy of the film material particles has been reduced from a high energy state to a state close to the energy state of the gas particles just emitted through the energy exchange of elastic collision, and because the kinetic energy loss of the opposite collision is the largest, the kinetic energy of the particles will also decrease, so that very low-energy film material particles are obtained, and stable low-energy deposition coating is achieved. At the same time, by adjusting the temperature and the gas filling volume, the minimum energy and exchange degree of the process gas particles can be controlled, which is equivalent to achieving the adjustment of the minimum energy level of the film material particles. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings required for use in the embodiments are briefly introduced below. It should be understood that the following drawings only show certain embodiments of the present invention and therefore should not be regarded as limiting the scope. For ordinary technicians in this field, other related drawings can be obtained based on these drawings without creative work.

[0025] Figure 1 This is a schematic diagram of a first embodiment of a low-energy PVD coating device according to an embodiment of the present invention;

[0026] Figure 2 It is a schematic diagram of a second embodiment of a low-energy PVD coating device according to an embodiment of the present invention;

[0027] Figure 3 This is a schematic diagram of the principle of a sputtering cathode of a low-energy PVD coating device according to an embodiment of the present invention;

[0028] Figure 4 This is a structural diagram of an energy regulating plate of a low-energy PVD coating device according to an embodiment of the present invention.

[0029] Icons: 1. Sputtering cathode; 11. Target; 12. Magnet pair; 13. Pole shoe; 14. Sealing ring; 2. Target material; 3. Substrate; 4. Energy adjustment plate; 41. Via hole; 5. Collision particle pipeline; 51. Gas outlet port; 6. Cooling fluid pipeline; 7. Gas guide plate. DETAILED DESCRIPTION

[0030] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Generally, the components of the embodiments of the present invention described and shown in the drawings here can be arranged and designed in various different configurations.

[0031] Therefore, the following detailed description of the embodiments of the present invention provided in the accompanying drawings is not intended to limit the scope of the invention claimed for protection, but merely represents selected embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0032] It should be noted that similar reference numerals and letters denote similar items in the following drawings, and therefore, once an item is defined in one drawing, further definition and explanation thereof is not required in subsequent drawings.

[0033] In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inside", "outside", etc. indicate positions or positional relationships based on the positions or positional relationships shown in the accompanying drawings, or the positions or positional relationships in which the product of the invention is usually placed when in use. They are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific position, be constructed and operated in a specific position, and therefore cannot be understood as limiting the present invention. In addition, the terms "first", "second", "third", etc. are only used to distinguish the description, and cannot be understood as indicating or implying relative importance.

[0034] In addition, the terms "horizontal", "vertical" and the like do not mean that the components are required to be absolutely horizontal or suspended, but can be slightly tilted. For example, "horizontal" only means that its direction is more horizontal than "vertical", and does not mean that the structure must be completely horizontal, but can be slightly tilted.

[0035] In the description of the present invention, it is also necessary to explain that, unless otherwise clearly specified and limited, the terms "set", "install", "connect", and "connect" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be indirectly connected through an intermediate medium, or it can be the internal communication of two elements. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0036] Embodiment 1

[0037] like Figure 1 As shown, in order to solve the problem that sputtering coating easily causes damage to the substrate 3, the coating can be deposited by manufacturing diffraction film particles with lower energy through particle elastic collision, so as to achieve the effect of reducing the film forming energy and temperature. However, this method only reduces part of the energy. The overall ambient temperature in the coating area from the coating source to the substrate 3 is still too high for the substrate 3 material, so the minimum energy that the film particles can reach is still relatively high. At the same time, the film particles deposited by this structure are mainly diffraction particles, which greatly sacrifices the deposition efficiency. Therefore, low-energy deposition methods still need to be explored and improved.

[0038] Embodiment 2

[0039] like Figures 2 to 4 As shown, a low-energy PVD coating device according to an embodiment of the present application includes:

[0040] A sputtering cathode 1, the sputtering cathode 1 is used to generate an electric field and is loaded with a target material 2, the loaded target material 2 is arranged opposite to a substrate 3 to be coated, and the loaded target material 2 generates film material particles moving along a first direction under the action of the electric field of the sputtering cathode 1, wherein the first direction is a direction toward the substrate 3;

[0041] An energy regulating plate 4, which is located between the substrate 3 and the sputtering cathode 1 and has a through hole 41 for film material particles to pass through;

[0042] The collision particle pipeline 5 is used to be connected to a collision particle source, and the collision particle source has a preset inert gas inside. The gas outlet port 51 of the collision particle pipeline 5 is set on the energy adjustment plate 4 and the transported inert gas moves in the second direction, wherein the second direction is the direction toward the target material 2, and there is a preset angle between the first direction and the second direction, and the range of the preset angle is 90°-270°; the kinetic energy of the inert gas is less than the kinetic energy of the film material particles.

[0043] In combination with the above embodiments, the low-energy PVD coating device includes a sputtering cathode 1, an energy regulating plate 4 and a collision particle pipe 5. The sputtering cathode 1 adopts a special electromagnetic structure design, which can generate a high-intensity and uniformly distributed electric field. The shape and intensity of the electric field are accurately calculated and optimized to ensure that a stable plasma discharge area is formed on the surface of the target material 2. For example, a ring permanent magnet can be combined with an electromagnetic coil to accurately control the electric field strength by adjusting the current of the electromagnetic coil.

[0044] The target material 2 is loaded with a detachable fixture, which is convenient for quickly replacing the target material 2 according to different coating requirements. The contact surface between the target material 2 and the sputtering cathode 1 is finely polished to ensure good electrical contact and thermal conductivity. In this embodiment, the target material 2 is made of titanium with a purity of 99.99% and a thickness of 10 mm.

[0045] The energy regulating plate 4 is located between the substrate 3 and the sputtering cathode 1, and the distance between the two can be precisely adjusted according to the coating process requirements. For example, the energy regulating plate 4 is moved in the vertical direction by an electric screw transmission mechanism, and the adjustment accuracy can reach ±0.1mm.

[0046] The through holes 41 on the energy regulating plate 4 are in a uniformly distributed circular array, with a diameter of 5 mm and a center distance of 10 mm between adjacent through holes 41. The inner wall of the through hole 41 is polished to reduce the friction resistance of the film material particles when passing through and avoid unnecessary loss of particle energy.

[0047] The collision particle pipeline 5 is made of high temperature resistant and corrosion resistant stainless steel, and its internal pipeline diameter is 10mm to ensure that the inert gas (preferably argon) can be stably and smoothly transported. The pipeline and the collision particle source are connected by a flange with good sealing performance to prevent gas leakage.

[0048] The outlet direction of the outlet port 51 of the collision particle pipe 5 forms a certain angle (for example, 60°) with the moving direction of the film material particles, so that the inert gas and the film material particles can fully collide with each other, effectively reducing the energy of the film material particles. The moving direction of the film material particles and the moving direction of the inert gas, that is, the first direction and the second direction are set with a preset angle according to the coating requirements. The range of the preset angle is 90°-270°, for example, the preset angle can be 120°, 150°, 180°, etc. The moving direction of the film material particles and the moving direction of the inert gas are basically in the opposite direction, and the kinetic energy of the inert gas is less than the kinetic energy of the film material particles. The film material particles will collide with the inert gas during the movement, thereby reducing the kinetic energy of the film material particles.

[0049] During the coating process, a certain voltage is first applied to the sputtering cathode 1. Under the action of the electric field, the atoms on the surface of the target material 2 are ionized and form a plasma. Driven by the electric field force, the film material particles in these plasmas move toward the substrate 3 along the direction of the electric field. At the same time, the inert gas (such as argon) in the collision particle source is transported to the energy adjustment plate 4 through the collision particle pipeline 5, and is ejected from the gas outlet port 51, moving in the direction of the loaded target material 2. Since the kinetic energy of the inert gas is less than the kinetic energy of the film material particles, when the film material particles collide with the inert gas molecules, the film material particles transfer part of the kinetic energy to the inert gas molecules, thereby reducing their own energy. The film material particles after energy adjustment continue to move toward the substrate 3 through the vias 41 on the energy adjustment plate 4, and are deposited on the surface of the substrate 3 to form a coating layer.

[0050] The low-energy PVD coating device of the embodiment of the present application further includes a cooling fluid pipeline 6, which is used to be connected to a cooling source. The cooling source has cooling fluid inside, and the cooling fluid pipeline 6 is connected to the energy regulating plate 4.

[0051] In combination with the above embodiment, the cooling fluid pipeline 6 is connected to a cooling source, and a cooling fluid such as cooling gas or cooling water is stored inside the cooling source. The cooling fluid pipeline 6 is connected to the energy regulating plate 4, and the cooling water flowing through the cooling fluid pipeline 6 will exchange heat with the energy regulating plate 4, and then achieve heat exchange with the film material particles flowing through the energy regulating plate 4, which plays a role in reducing the kinetic energy of the film material particles.

[0052] In the low-energy PVD coating device of the embodiment of the present application, the energy regulating plate 4 is provided with a plurality of via holes 41 which are evenly spaced along the width direction of the energy regulating plate 4, and the cross-section of each via hole 41 along the width direction of the energy regulating plate 4 is trapezoidal, and the dimension of each via hole 41 on the side facing the substrate 3 is larger than its dimension facing the target material 2.

[0053] In combination with the above-mentioned embodiment, the trapezoidal structure design of the via 41 enables the film material particles to undergo a more stable and controllable energy adjustment process due to the gradual change of space when passing through the via 41. The larger opening on the side of the substrate 3 is conducive to the particles with appropriately reduced energy to be deposited on the substrate 3 more smoothly, reducing the particle scattering and uneven energy loss caused by the via 41 structure, thereby improving the uniformity of the coating. At the same time, the probability of collision between the inert gas and the film material particles is increased, which plays a role in reducing the kinetic energy of the film material particles.

[0054] In the low-energy PVD coating device of the embodiment of the present application, a plurality of cooling fluid pipes 6 are provided, and at least one cooling fluid pipe 6 is provided between every two via holes 41 , and each cooling fluid pipe 6 is extended along the length direction of the energy regulating plate 4 .

[0055] In combination with the above embodiment, a plurality of cooling fluid pipes 6 are provided, and each cooling fluid pipe 6 is extended along the length direction of the energy regulating plate 4, which can fully exchange heat with the film material particles and play a role in fully reducing the kinetic energy of the film material particles.

[0056] In the low-energy PVD coating device of the embodiment of the present application, the length of the energy regulating plate 4 from the substrate 3 is less than the length of the energy regulating plate 4 from the target material 2, and the gas outlet port 51 of the collision particle duct 5 is arranged on the side of the energy regulating plate 4 facing the substrate 3.

[0057] In combination with the above-mentioned embodiment, the length of the energy regulating plate 4 from the substrate 3 is less than the length of the energy regulating plate 4 from the target material 2. For example, the length of the energy regulating plate 4 from the target material 2 is ten times the length of the energy regulating plate 4 from the substrate 3. On the one hand, the inert gas output from the collision particle pipeline 5 can flow to the target material 2 through the via 41 along the smaller space between the substrate 3 and the energy regulating plate 4, thereby achieving collision with the film material particles. On the other hand, the collision time of the inert gas and the film material particles is increased, thereby achieving multiple collisions of the inert gas and the film material particles.

[0058] The low-energy PVD coating device of the embodiment of the present application further includes a plurality of gas guide plates 7, which are arranged adjacent to each other and connected to form a guide cavity with two ends open, and the energy adjustment plate 4, the sputtering cathode 1 and the gas outlet port 51 of the collision particle pipeline 5 are located in the guide cavity. The gas guide plate 7 is arranged outside the space between the substrate 3 and the target material 2 to form a relatively closed space, which can form a relatively stable airflow moving from the substrate 3 to the coating source direction.

[0059] The low-energy PVD coating device of the embodiment of the present application, the sputtering cathode 1 includes a target body 11, a magnet pair 2 and a magnetic pole shoe 13, the magnet is arranged in the target body 11 and is used to be connected to the negative pole of an external power supply to generate an electric field, the target material 2 is arranged on the target body 11 and is located in the electric field, and the magnetic pole shoe 13 is arranged in the target body 11 and is connected to the magnet pair 2.

[0060] In combination with the above embodiment, the sputtering power supply applies a negative voltage of several hundred volts to the cathode, and forms an electric field through the magnet pair 2 (three permanent magnets) and the grounded substrate 3. Inert gas (argon) will be ionized in this electric field and accelerated to hit the target material 2 outside the cathode. When the energy reaches a certain threshold, it can knock the target material 2 particles away, and will be deposited into a film when it hits the substrate 3. The cooling water set at plays a role in reducing the temperature of the magnet pair 2, and the sealing ring 14 between the target material 2 and the target body 11 plays a role in preventing cooling water leakage.

[0061] In summary, the energy adjustment plate 4 can be a strip grid or other shaped grid structure with a certain chamfer angle. By adjusting the ratio of the grid vacant area to the total area and the chamfer size of the grid, the number of incident film material particles can be adjusted, which is equivalent to adjusting the deposition rate. A cooling fluid pipeline 6 is arranged inside the energy adjustment plate 4 for temperature adjustment. At the same time, the energy adjustment plate 4 and the gas guide plate 7 form a relatively closed space channel. The vacuum system exhaust port is located outside the coating source and away from the substrate 3, so a relatively stable process gas flow path from the working direction to the coating source is formed. The low-energy film material particles coming out of the energy adjustment plate 4 collide and exchange energy with the high-energy film material particles coming out of the coating source multiple times on the path, forming a distribution gradient of energy from low to high in this area. The film material particles finally deposited on the substrate 3 have an energy level close to the process gas particles just coming out of the energy adjustment plate 4. Therefore, very low-energy film material particles are obtained, and stable low-energy deposition coating is achieved. At the same time, by adjusting the temperature and the inflation volume, the minimum energy and exchange degree of the process gas particles can be controlled, which is equivalent to achieving the adjustment of the minimum energy level of the film material particles.

[0062] Embodiment 3

[0063] A low-energy PVD coating method according to an embodiment of the present application includes:

[0064] The film-plating cathode 1 generates an electric field of a set intensity, so that the target material 2 located within the influence range of the electric field generates film material particles moving toward the substrate 3, and the film material particles are deposited on the substrate through the via 41 located between the substrate 3 and the sputtering cathode 1;

[0065] An inert gas is transported toward the target material 2 through the collision particle pipeline 5, and the kinetic energy of the inert gas is smaller than the kinetic energy of the film material particles;

[0066] The cooling fluid is transported through the cooling fluid pipe 6 to exchange heat with the energy adjustment plate 4 and the film material particles passing through the energy adjustment plate 4 .

[0067] In combination with the above embodiment, a coating device is prepared, ensuring that a suitable target material 2 (such as metal aluminum, purity 99.9%) is loaded on the sputtering cathode 1, and the substrate 3 is placed at a predetermined position so that it is opposite to the target material 2. The parameters of the sputtering cathode 1 are adjusted to generate an electric field of a set strength. In this embodiment, the electric field strength is set to 500V / cm. Under the action of the electric field, the atoms on the surface of the target material 2 are ionized and accelerated to form film material particles, and these film material particles begin to move toward the substrate along the direction of the electric field.

[0068] The energy regulating plate 4 is located between the substrate and the sputtering cathode 1 , and is provided with a plurality of via holes 41 of specific shapes (eg via holes 41 with a trapezoidal cross section). The film material particles will approach these via holes 41 when flying toward the substrate 3 .

[0069] Start the collision particle pipeline system, connect the collision particle pipeline 5 with the collision particle source filled with a preset inert gas (such as argon), set the gas flow rate of the collision particle pipeline 5 to 50 sccm and the pressure to 0.5 MPa, so that the inert gas passes through the pipeline at a stable flow rate and pressure, and is ejected from the gas outlet port 51 provided on the energy adjustment plate 4, and the ejection direction is toward the target 2.

[0070] Since the kinetic energy of the inert gas is less than that of the film material particles, when the film material particles fly toward the substrate 3 and pass through the area near the energy adjustment plate 4, they collide with the inert gas molecules ejected. During the collision, the film material particles transfer part of their kinetic energy to the inert gas molecules, thereby reducing their own energy, thereby achieving effective regulation of the energy of the film material particles. After energy regulation, the film material particles continue to move toward the substrate 3 through the vias 41 on the energy adjustment plate 4.

[0071] The cooling fluid pipeline system is turned on to deliver the cooling fluid (such as cooling water) at a certain flow rate (such as 2 L / min) to the cooling channel inside the energy regulating plate 4. The cooling fluid flows inside the energy regulating plate 4 and exchanges heat with the energy regulating plate 4 and the film material particles passing through the energy regulating plate 4.

[0072] Since the film material particles may carry a certain amount of heat during the movement, especially after the collision with the inert gas, their energy state and temperature distribution may change. Through the heat exchange effect of the cooling fluid, the temperature of the film material particles can be effectively controlled to avoid abnormal crystallization or other adverse phenomena of the film material particles during the deposition process due to excessive temperature. At the same time, it also helps to stabilize the working temperature of the energy regulating plate and ensure the stability of its structure and performance.

[0073] After energy regulation and temperature control, the film material particles are finally deposited on the substrate 3 to form a coating layer. During the deposition process, the coating time is accurately controlled according to the thickness and performance requirements of the desired coating layer. For example, when a coating layer with a thickness of 100nm needs to be prepared, the coating time is determined to be 30 minutes through calculation and experiment. During the coating process, the energy and temperature of the film material particles and the growth of the coating layer are continuously monitored, and the parameters such as the electric field strength, the flow rate and pressure of the inert gas, and the flow rate of the cooling fluid are adjusted in time to ensure the stability of the coating process and the consistency of the quality of the coating layer.

[0074] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. For those skilled in the art, the present invention may have various modifications and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention shall be included in the protection scope of the present invention.

Claims

1. A low energy PVD coating device, characterized in that: include: A sputtering cathode, the sputtering cathode is used to generate an electric field and is loaded with a target material, the loaded target material is arranged opposite to the substrate to be coated, and the loaded target material generates film material particles moving along a first direction under the action of the electric field of the sputtering cathode, and the first direction is a direction toward the substrate; An energy regulating plate, the energy regulating plate is located between the substrate and the sputtering cathode and has a through hole for the film material particles to pass through; A collision particle pipeline, the collision particle pipeline is used to be connected to a collision particle source, the collision particle source has a preset inert gas inside, the gas outlet of the collision particle pipeline is arranged on the energy adjustment plate and the inert gas transported moves along a second direction, the second direction is a direction toward the target material, there is a preset angle between the first direction and the second direction, the preset angle ranges from 90° to 270°; the kinetic energy of the inert gas is less than the kinetic energy of the film material particles; A cooling fluid pipeline is used to be connected to a cooling source, wherein the cooling source has cooling fluid inside, and the cooling fluid pipeline is connected to the energy regulating plate.

2. The low energy PVD coating device according to claim 1, characterized in that: The energy adjustment plate has a plurality of via holes which are arranged at equal intervals along the width direction of the energy adjustment plate. The cross section of each via hole along the width direction of the energy adjustment plate is trapezoidal, and the dimension of each via hole facing the substrate is larger than its dimension facing the target material.

3. The low energy PVD coating device according to claim 2, characterized in that: There are multiple cooling fluid pipelines, and at least one cooling fluid pipeline is arranged between every two through holes, and each cooling fluid pipeline is extended along the length direction of the energy adjustment plate.

4. The low energy PVD coating device according to claim 1, characterized in that: The distance between the energy adjustment plate and the substrate is shorter than the distance between the energy adjustment plate and the target.

5. The low energy PVD coating device according to claim 1, characterized in that: The gas outlet port of the collision particle pipeline is arranged on a side of the energy adjustment plate facing the substrate.

6. The low energy PVD coating device according to claim 1, characterized in that: The coating device also includes a plurality of gas guide plates, which are arranged adjacent to each other in sequence and connected to form a guide cavity with openings at both ends, and the gas outlet ports of the energy adjustment plate, the sputtering cathode and the collision particle pipeline are located in the guide cavity.

7. The low-energy PVD coating device according to any one of claims 1 to 6, characterized in that: The sputtering cathode comprises a target body and a magnet pair, wherein the magnet is arranged in the target body and is used to be connected to a negative electrode of an external power source to generate an electric field, and the target material is arranged on the target body and is located in the electric field.

8. The low energy PVD coating device according to claim 7, characterized in that: The sputtering cathode further includes a magnetic pole shoe disposed in the target body and connected to the magnet pair.

9. A low energy PVD coating method, characterized in that: include: An electric field of a set intensity is generated by a film-plating cathode, so that a target material located within the influence range of the electric field generates film material particles moving toward the substrate, and the film material particles are deposited on the substrate through a via hole located between the substrate and the sputtering cathode; An inert gas is transported toward the target material through a collision particle pipeline, and the kinetic energy of the inert gas is less than the kinetic energy of the film material particles; A cooling fluid is transported through the cooling fluid pipeline to exchange heat with the energy adjustment plate and the film material particles passing through the energy adjustment plate.

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