Semiconductor high-temperature diffusion furnace

Abstract

The invention discloses a semiconductor high-temperature diffusion furnace, and relates to the technical field of diffusion furnaces, the semiconductor high-temperature diffusion furnace comprises a diffusion bin and an air supply bin, a dust cleaning cavity and a quartz chamber are installed in the diffusion bin, a wafer transfer mechanism is arranged between the dust cleaning cavity and the quartz chamber, and a wafer boat transfer mechanism is arranged on the side, away from the dust cleaning cavity, of the wafer transfer mechanism; the wafer boat transfer mechanism comprises a sealing table and a wafer boat frame, the sealing table is matched with the quartz chamber, the quartz chamber is sequentially provided with a second quartz tube, a first quartz tube and a heat preservation cylinder from inside to outside, a ventilation cavity is formed between the first quartz tube and the second quartz tube, and a plurality of air supply channels are obliquely formed in the side wall of the second quartz tube. Therefore, the mixed gas is introduced into the second quartz tube from the first quartz tube by using the obliquely arranged gas supply channel, and in the process, the mixed gas forms a spiral gas flow, so that the mixed gas can reach the surface of a wafer more quickly and uniformly.

Description

Technical Field

[0001] The invention relates to the technical field of diffusion furnaces, and in particular to a semiconductor high-temperature diffusion furnace. Background Art

[0002] Semiconductor diffusion furnace is the core equipment in semiconductor manufacturing, mainly used for high-temperature processes such as doping, oxidation, and annealing.

[0003] When in use, the wafer needs to be loaded onto the wafer boat first, and then the wafer boat is sent into the quartz tube. The quartz tube is heated and kept warm, and then the doping gas (mixed by gases such as O2, POCl3, B2H6, etc.) is sent into the quartz tube. After entering the quartz tube, the doping gas gradually diffuses and replaces the original air in the quartz tube. Under the influence of high temperature, the doping gas contacts the surface of the wafer, and the proton atoms such as phosphorus and boron diffuse into the interior of the wafer to form electrical characteristic areas such as PN junctions. The doping time and the thickness of the doping layer need to be adjusted accordingly according to the material.

[0004] After the doping process is completed, steps such as annealing, cooling and residual gas discharge are required. Then the quartz tube is opened, the wafer that has completed the doping process is taken out, and the wafer is sampled and tested before storage.

[0005] In the prior art, the doping gas needs to be mixed uniformly by a flow plate before entering the quartz tube. Although this method can make the gases mix evenly, in actual use, the mixed gas cannot quickly reach the wafers, and then the problem of uneven doping on the wafer surface will occur in the early stage of the doping process. Summary of the invention

[0006] In view of the above defects, the purpose of the present invention is to provide a semiconductor high-temperature diffusion furnace, aiming to solve the problem of uneven doping layer on the surface of wafer in the prior art.

[0007] In order to solve the above technical problems, the technical solution of the present invention is: A semiconductor high-temperature diffusion furnace comprises a diffusion chamber and an air supply chamber, wherein a dust cleaning chamber and a quartz chamber are installed in the diffusion chamber, a wafer transfer mechanism is arranged between the dust cleaning chamber and the quartz chamber, a wafer boat transfer mechanism is arranged on the side of the transfer mechanism away from the dust cleaning chamber, the wafer boat transfer mechanism comprises a sealing table and a wafer boat rack, the wafer boat rack is located at one end of the sealing table facing the quartz chamber, the sealing table and the quartz chamber are arranged in coordination, the quartz chamber is sequentially provided with a second quartz tube, a first quartz tube and a heat preservation tube from the inside to the outside, a ventilation cavity is arranged between the first quartz tube and the second quartz tube, a plurality of air intake pipes are connected to the end of the first quartz tube away from the sealing table, a uniform flow plate is arranged between the air intake pipe and the second quartz tube, and a plurality of air supply channels are obliquely arranged on the side wall of the second quartz tube.

[0008] Among them, several of the air supply channels are arranged to form several air supply arrays, several of the air supply arrays are arranged around the second quartz tube, several of the air supply arrays are distributed along the length direction of the second quartz tube, and several of the air supply channels are all arranged clockwise or counterclockwise.

[0009] Among them, the crystal boat rack includes an upper disk body and a lower disk body, and a plurality of connecting columns are arranged on the side wall of the upper disk body. The end of the connecting column away from the upper disk body is connected to the lower disk body, and a plurality of clamping platforms are arranged on the side of the connecting column facing the upper disk body, and the plurality of clamping platforms are evenly arranged between the upper disk body and the lower disk body.

[0010] Among them, the sealing platform includes a sealing section and a supporting section, the side wall of the sealing section is sealed and connected to the second quartz tube, the crystal boat frame is located at one end of the sealing section away from the supporting section, and a driving component is installed at the bottom of the supporting section, and the driving component includes a power screw and a sliding rod, the power screw is horizontally arranged, and a driving motor is installed at one end of the power screw, and the sliding rod is parallel to the power screw, and a support platform is arranged between the power screw and the sliding rod, one end of the support platform is threadedly connected to the power screw, and the other end of the support platform is slidably connected to the sliding rod, and a telescopic driving cylinder is arranged between the support platform and the supporting section.

[0011] Among them, a power cavity is arranged in the supporting section, a magnetic coupler is arranged in the power cavity, one end of the magnetic coupler facing the crystal boat frame is dynamically connected to the rotor end, a sealing cavity is arranged in the sealing section, a driving disk is installed in the sealing cavity, a limiting column is arranged between the driving disk and the lower disk body, the driving disk is matched with the rotor end, and a heat insulation layer is arranged between the rotor end and the driving disk.

[0012] Among them, the driving disk includes a first disk body and a second disk body, the first disk body is located between the second disk body and the limiting column, the diameter of the first disk body is larger than that of the second disk body, an auxiliary ring is arranged between the first disk body and the bottom of the sealing cavity, the auxiliary ring includes a first ring body and a second ring body, the first ring body is arranged around the second ring body, the second ring body is arranged around the vv body, a plurality of rolling balls are arranged between the first ring body and the second ring body, and a partial area of ​​the rolling balls is in contact with an end of the first disk body away from the limiting column.

[0013] Among them, a limiting cover is installed at one end of the power chamber away from the sealing chamber, and the rotor end includes a driving section and a connecting section. The driving section is arranged opposite to the second disk body, and the connecting section is located between the driving section and the limiting cover. A limiting ring is provided at one end of the limiting cover facing the driving section, and a plurality of supporting balls are arranged in the limiting ring, and part of the area of ​​the supporting balls is in contact with the driving section.

[0014] Among them, a plurality of arc-shaped fan blades are arranged at one end of the upper disk body away from the lower disk body, and the plurality of arc-shaped fan blades are arranged around the center of the upper disk body. A plurality of through holes are arranged on the upper disk body, one end of the through hole is connected to the top of the upper disk body, and the other end of the through hole is connected to the bottom of the upper disk body.

[0015] Wherein, wind blades are arranged on the side walls of the connecting column, and the length direction of the wind blades is the same as the length direction of the connecting column.

[0016] Among them, an annular air duct is also arranged in the sealed cavity, an exhaust duct is installed at the bottom of the sealing platform, several receiving air ducts are arranged between the side of the annular air duct facing the second quartz tube and the top of the sealed cavity, and a secondary duct is arranged between the exhaust duct and the annular air duct.

[0017] After adopting the above technical solution, the beneficial effects of the present invention are: First, the mixed gas is introduced from the first quartz tube into the second quartz tube by using the inclined gas delivery channel. In this process, the mixed gas forms a spiral airflow, which enables the mixed gas to reach the surface of the wafer more quickly and evenly. Second, the magnetic coupling is used to drive the rotor end to rotate. The rotor end drives the drive disk and the crystal boat frame to rotate without contacting the drive disk. This not only avoids heat overflow and damage to the drive device, but also reduces energy waste, and also enables the crystal boat frame to rotate, so that the wafers on the crystal boat frame can be in uniform contact with the mixed gas. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] Figure 1 This is the structural diagram of a semiconductor high temperature diffusion furnace; Figure 2 This is the structural diagram of the quartz chamber; Figure 3 is a top sectional view of a second quartz tube; Figure 4 This is the structural diagram of the crystal boat frame; Figure 5 for Figure 4 A partial enlarged view of a; Figure 6 is a top view of the upper plate; Figure 7 for Figure 4 A partial enlarged view of middle b; Figure 8 is a top view of the auxiliary ring; Fig. 9 A top view of the flow plate.

[0019] In the figure: 1-diffusion chamber, 2-air supply chamber, 3-dust cleaning chamber, 4-quartz chamber, 41-first quartz tube, 411-heating wire, 42-second quartz tube, 421-air supply channel, 43-insulation tube, 431-cooling water pipe, 44-ventilation chamber, 45-intake pipe, 46-flow plate, 5-wafer transfer mechanism, 6-wafer boat transfer mechanism, 61-sealing table, 611-sealing section, 6111-sealing chamber, 6112-driving disk, 6113-limiting column, 6114-insulation layer, 6115-first disk body, 6116-second disk body, 6117-auxiliary ring, 6118-first ring body, 6119-second ring body, 6110-rolling ball, 61111-limiting cover, 61112- Limiting ring, 61113-support ball, 612-support section, 6121-power cavity, 6122-magnetic coupler, 6123-rotor end, 6124-driving section, 6125-connecting section, 62-crystal boat frame, 621-upper disk, 6211-receiving area, 6212-support area, 6213-arc-shaped fan blades, 6214-through hole, 622-lower disk, 623-connecting column, 6231-wind blades, 624-card table, 63-drive assembly, 631-power screw rod, 632-sliding rod, 633-drive motor, 634-support table, 64-annular air duct, 641-exhaust duct, 642-receiving air duct, 643-secondary duct, 65-telescopic drive cylinder. DETAILED DESCRIPTION

[0020] It should be understood that the specific embodiments described herein are only used to explain the present invention, and are not used to limit the present invention.

[0021] Example: refer to Figure 1-Figure 9 A semiconductor high-temperature diffusion furnace includes a diffusion chamber 1 and a gas supply chamber 2, wherein a dust cleaning chamber 3 and a quartz chamber 4 are installed in the diffusion chamber 1, a wafer transfer mechanism 5 is arranged between the dust cleaning chamber 3 and the quartz chamber 4, a wafer boat transfer mechanism 6 is arranged on the side of the transfer mechanism away from the dust cleaning chamber 3, the wafer boat transfer mechanism 6 includes a sealing platform 61 and a wafer boat rack 62, the wafer boat rack 62 is located at one end of the sealing platform 61 facing the quartz chamber 4, and the sealing platform 61 is arranged in coordination with the quartz chamber 4.

[0022] The diffusion furnace provided in this solution is a vertical diffusion furnace. When in use, the wafer boat carrying the wafers needs to be placed in the dust cleaning chamber 3. High-speed wind will be provided in the dust cleaning chamber 3. The purpose is to clean the wafers and prevent the wafers from bringing in external suspended particles when entering the quartz chamber 4, thereby avoiding the problem of wafer scrapping. After the cleaning is completed in the dust cleaning chamber 3, the wafer on the wafer boat is transported to the wafer boat rack 62 by the wafer transfer mechanism 5. When the wafer is transferred to the wafer boat rack 62, the wafer boat transfer mechanism 6 will be started, which drives the sealing table 61 to move toward the quartz chamber 4.

[0023] In this solution, the quartz chamber 4 is provided with a second quartz tube 42, a first quartz tube 41 and a heat preservation tube 43 from the inside to the outside, a ventilation cavity 44 is provided between the first quartz tube 41 and the second quartz tube 42, a plurality of air inlet pipes 45 are connected to the end of the first quartz tube 41 away from the sealing platform 61, a flow plate 46 is provided between the air inlet pipe 45 and the second quartz tube 42, and a plurality of air supply channels 421 are provided obliquely on the side wall of the second quartz tube 42. In this solution, when the first quartz tube 41 starts to work, the sealing platform 61 will block the opening of the second quartz tube 42 to complete the sealing work. At this time, the crystal boat rack 62 and the wafers it carries will be located in the second quartz tube 42.

[0024] When in use, the air inlet pipe 45 will deliver the various gases to the first quartz tube 41, and then the various gases will be mixed through the flow plate 46 and reach the ventilation cavity 44. Since the air supply channel 421 on the side wall of the second quartz tube 42 is inclined, the mixed gas will form a spiral airflow after entering the second quartz tube 42 through the air supply channel 421, and then it can reach the surface of each wafer more quickly and evenly, avoiding the problem of uneven distribution of the mixed gas in the second quartz tube 42 in the prior art.

[0025] When the mixed gas completes the replacement of the air in the second quartz tube 42, the quartz chamber 4 starts to heat up and completes the processing of the wafer. When the processing is completed, low-temperature nitrogen will be introduced, and the quartz chamber 4 starts the water cooling device, using low-temperature nitrogen to replace the residual exhaust gas in the second quartz tube 42 and achieve the cooling of the wafer. The water cooling device accelerates the cooling speed of the entire device and improves the overall work efficiency.

[0026] In order to more conveniently form the spiral airflow, several of the air supply arrays are arranged around the second quartz tube 42, and several of the air supply channels 421 are arranged clockwise or counterclockwise, and several of the air supply channels 421 are arranged to form several air supply arrays, and several of the air supply arrays are distributed along the length direction of the second quartz tube 42. The air supply arrays are distributed along the length direction of the second quartz tube 42, and the purpose is to enable the air supply arrays to match the wafers distributed up and down, so that the spiral airflow can reach the surface of each wafer more quickly.

[0027] like Figure 4-8As shown, in order to facilitate the placement of wafers, the crystal boat rack 62 includes an upper plate body 621 and a lower plate body 622, and a plurality of connecting posts 623 are arranged on the side wall of the upper plate body 621, and one end of the connecting post 623 away from the upper plate body 621 is connected to the lower plate body 622, and a plurality of card platforms 624 are arranged on the side of the connecting post 623 facing the upper plate body 621, and the plurality of card platforms 624 are evenly arranged between the upper plate body 621 and the lower plate body 622. A plurality of connecting posts 623 are arranged around the wafer, and at this time, a part of the bottom area of ​​the wafer contacts the card platform 624, so that the wafer is limited. In this solution, the card platform 624 is extremely small, so multiple card platforms 624 are required to jointly support the wafer to ensure the stability of the wafer.

[0028] In order to facilitate the transfer of the wafer from the wafer boat to the wafer boat rack 62, the upper plate 621 is circular, the side of the upper plate 621 facing the wafer transfer mechanism 5 is the receiving area 6211, and the side of the upper plate 621 away from the wafer transfer mechanism 5 is the supporting area 6212. The receiving area 6211 and the supporting area 6212 are both semicircular, and a plurality of connecting columns 623 are arranged around the supporting area 6212. Since the wafer is circular, in order to prevent the connecting columns 623 from blocking the wafer, Figure 6 As shown, the dotted line A divides the upper plate body 621 into a receiving area 6211 and a supporting area 6212. The receiving area 6211 and the supporting area 6212 are different parts of the same circle, the radius of the wafer is slightly smaller than the radius of the receiving area 6211, and the connecting column 623 is arranged around the supporting area 6212, so that the wafer can be horizontally delivered between the upper plate body 621 and the lower plate body 622.

[0029] In order to facilitate the sealing platform 61 to move horizontally and up and down, the sealing platform 61 includes a sealing section 611 and a supporting section 612. The side wall of the sealing section 611 is sealed and connected to the second quartz tube 42. The crystal boat rack 62 is located at one end of the sealing section 611 away from the supporting section 612. A driving component 63 is installed at the bottom of the supporting section 612. The driving component 63 includes a power screw 631 and a sliding rod 632. The power screw 631 is horizontally arranged, and a driving motor 633 is installed at one end of the power screw 631. The sliding rod 632 is parallel to the power screw 631. A support platform 634 is arranged between the power screw 631 and the sliding rod 632. One end of the support platform 634 is threadedly connected to the power screw 631, and the other end of the support platform 634 is slidably connected to the sliding rod 632. A telescopic driving cylinder 65 is arranged between the support platform 634 and the supporting section 612.

[0030] The driving motor 633 drives the power screw 631 to rotate. Since the power screw 631 is threadedly connected to the support platform 634, and the sliding rod 632 is slidably connected to the support platform 634, the rotation of the power screw 631 will drive the support platform 634 to move horizontally. In order to facilitate the up and down movement of the sealing platform 61, the present solution introduces a telescopic driving cylinder 65. In order to facilitate the sealing section 611 to enter the second quartz tube 42 and complete the sealing work, the outer diameter of the sealing section 611 is smaller than the inner diameter of the second quartz tube 42.

[0031] In order to facilitate the mixed gas to reach the surface of the wafer more evenly, we need to rotate the wafer boat frame 62. To this end, a power chamber 6121 is provided in the support section 612, a magnetic coupler 6122 is provided in the power chamber 6121, and one end of the magnetic coupler 6122 facing the wafer boat frame 62 is connected to the rotor end 6123 by power, a sealing chamber 6111 is provided in the sealing section 611, a driving disk 6112 is installed in the sealing chamber 6111, a limiting column 6113 is provided between the driving disk 6112 and the lower disk body 622, the driving disk 6112 is matched with the rotor end 6123, and a heat insulation layer 6114 is provided between the rotor end 6123 and the driving disk 6112. The magnetic coupler 6122 drives the rotor end 6123 to rotate. Driven by the magnetic field, the driving disk 6112 rotates along with the rotor end 6123. Since a limiting column 6113 is provided between the driving disk 6112 and the lower disk body 622, the driving disk 6112 will drive the crystal boat frame 62 to rotate when rotating. In order to reduce the heat loss in the second quartz tube 42, a heat insulation layer 6114 is provided between the driving disk 6112 and the rotor end 6123.

[0032] It is worth noting that the thermal insulation layer 6114 in this solution does not contain any metal material that affects the magnetic field.

[0033] In order to facilitate the rotation of the crystal boat rack 62, we also need to reduce the friction force when the driving disk 6112 rotates. For this purpose, the driving disk 6112 includes a first disk body 6115 and a second disk body 6116. The first disk body 6115 is located between the second disk body 6116 and the limiting column 6113. The diameter of the first disk body 6115 is larger than that of the second disk body 6116. An auxiliary ring 6117 is arranged between the first disk body 6115 and the bottom of the sealing cavity 6111. The auxiliary ring 6117 includes a first ring body 6118 and a second ring body 6119. The first ring body 6118 is arranged around the second ring body 6119, and the second ring body 6119 is arranged around the second disk body 6116. A plurality of rolling balls 6110 are arranged between the first ring body 6118 and the second ring body 6119, and a partial area of ​​the rolling balls 6110 is in contact with an end of the first disk body 6115 away from the limiting column 6113. The rolling ball 6110 changes the surface contact between the driving disk 6112 and the sealing cavity 6111 into point contact, thereby greatly reducing the friction between the two.

[0034] Similarly, a limit cover 61111 is installed at one end of the power cavity 6121 away from the sealing cavity 6111, and the rotor end 6123 includes a driving section 6124 and a connecting section 6125. The driving section 6124 is arranged opposite to the second disk 6116, and the connecting section 6125 is located between the driving section 6124 and the limit cover 61111. A limit ring 61112 is arranged at one end of the limit cover 61111 facing the driving section 6124, and a plurality of supporting balls 61113 are arranged in the limit ring 61112, and a part of the supporting balls 61113 is in contact with the driving section 6124. This design reduces the friction between the rotor end 6123 and the limit cover 61111, thereby reducing energy consumption.

[0035] In order to reduce energy consumption, we can use wind energy. To this end, the upper disk body 621 is provided with a plurality of arc-shaped blades 6213 at one end away from the lower disk body 622, and the plurality of arc-shaped blades 6213 are arranged around the center of the circle of the upper disk body 621. The upper disk body 621 is provided with a plurality of through holes 6214, one end of the through hole 6214 is connected to the top of the upper disk body 621, and the other end of the through hole 6214 is connected to the bottom of the upper disk body 621. The mixed gas will form a spiral airflow after entering the second quartz tube 42. In order to reduce energy consumption, we can use this airflow. For this reason, the present scheme introduces the arc-shaped blades 6213. The spiral airflow collides with the arc-shaped blades 6213 during the forward process and pushes the arc-shaped blades 6213. This thrust will be transmitted to the upper disk body 621 and the lower disk body 622, so that the crystal boat rack 62 can be rotated more conveniently.

[0036] Preferably, a wind blade 6231 is provided on the side wall of the connecting column 623, and the length direction of the wind blade 6231 is the same as the length direction of the connecting column 623. This design enables the spiral airflow to push the wind blade 6231 during the forward process, thereby assisting the crystal boat frame 62 to rotate.

[0037] like Figure 2 As shown, in order to facilitate heating, a heating wire 411 is arranged around the outside of the first quartz tube 41 .

[0038] In order to facilitate refrigeration, the heat preservation barrel includes an interlayer, and a cooling water pipe 431 is arranged in the interlayer, and the cooling water pipe 431 is arranged around the interlayer.

[0039] In this solution, an annular air duct 64 is further provided in the sealed cavity 6111, an exhaust duct 641 is installed at the bottom of the sealing platform 61, a plurality of receiving air ducts 642 are provided between the side of the annular air duct 64 facing the second quartz tube 42 and the top of the sealed cavity 6111, and a secondary duct 643 is provided between the exhaust duct 641 and the annular air duct 64. When in use, the air and mixed gas in the second quartz tube 42 pass through the receiving air duct 642 to reach the annular air duct 64, and then pass through the annular air duct 64 through the secondary duct 643 to reach the exhaust duct 641, and then are sent to the exhaust gas treatment mechanism in the air supply bin 2 by the exhaust duct 641.

[0040] In summary, the advantages of this solution are: first, the mixed gas is introduced from the first quartz tube 41 to the second quartz tube 42 by using the inclined gas delivery channel 421. In this process, the mixed gas forms a spiral airflow, which enables the mixed gas to reach the surface of the wafer more quickly and evenly. Second, the magnetic coupler 6122 is used to drive the rotor end 6123 to rotate. The rotor end 6123 drives the drive disk 6112 and the crystal boat rack 62 to rotate without contacting the drive disk 6112. This not only avoids heat overflow and damage to the drive device, but also reduces energy waste, and also enables the crystal boat rack 62 to rotate, so that the wafers on the crystal boat rack 62 can be in uniform contact with the mixed gas.

[0041] The present invention is not limited to the above-mentioned specific implementation modes. Various changes made by ordinary technicians in this field based on the above-mentioned concepts without creative work are all within the protection scope of the present invention.

Claims

1. A semiconductor high-temperature diffusion furnace, comprising a diffusion chamber (1) and a gas supply chamber (2), wherein a dust cleaning chamber (3) and a quartz chamber (4) are installed in the diffusion chamber (1), a wafer transfer mechanism (5) is arranged between the dust cleaning chamber (3) and the quartz chamber (4), a wafer boat transfer mechanism (6) is arranged on a side of the transfer mechanism away from the dust cleaning chamber (3), the wafer boat transfer mechanism (6) comprises a sealing platform (61) and a wafer boat rack (62), the wafer boat rack (62) is located at one end of the sealing platform (61) facing the quartz chamber (4), the sealing platform (61) and the quartz chamber (4) are arranged in coordination, characterized in that: The quartz chamber (4) is provided with a second quartz tube (42), a first quartz tube (41) and a heat preservation tube (43) in sequence from the inside to the outside; a ventilation cavity (44) is provided between the first quartz tube (41) and the second quartz tube (42); one end of the first quartz tube (41) away from the sealing platform (61) is connected to a plurality of air intake pipes (45); a flow equalizer (46) is provided between the air intake pipes (45) and the second quartz tube (42); and a plurality of air supply channels (421) are obliquely provided on the side wall of the second quartz tube (42).

2. A semiconductor high temperature diffusion furnace according to claim 1, characterized in that: A plurality of the gas supply channels (421) are arranged to form a plurality of gas supply arrays, the plurality of the gas supply arrays are arranged around the second quartz tube (42), the plurality of the gas supply arrays are distributed along the length direction of the second quartz tube (42), and the plurality of the gas supply channels (421) are all arranged clockwise, or are all arranged counterclockwise.

3. A semiconductor high temperature diffusion furnace according to claim 2, characterized in that: The crystal boat rack (62) comprises an upper disk body (621) and a lower disk body (622); a plurality of connecting columns (623) are arranged on the side wall of the upper disk body (621); one end of the connecting column (623) away from the upper disk body (621) is connected to the lower disk body (622); a plurality of clamping platforms (624) are arranged on the side of the connecting column (623) facing the upper disk body (621); and the plurality of clamping platforms (624) are evenly arranged between the upper disk body (621) and the lower disk body (622).

4. The semiconductor high temperature diffusion furnace according to claim 1, characterized in that: The sealing platform (61) comprises a sealing section (611) and a supporting section (612); a side wall of the sealing section (611) is sealedly connected to the second quartz tube (42); the crystal boat rack (62) is located at one end of the sealing section (611) away from the supporting section (612); a driving assembly (63) is installed at the bottom of the supporting section (612); the driving assembly (63) comprises a power screw (631) and a sliding rod (632); the power screw (631) is arranged horizontally, and the power screw A driving motor (633) is installed at one end of (631), the sliding rod (632) is parallel to the power screw rod (631), a support platform (634) is arranged between the power screw rod (631) and the sliding rod (632), one end of the support platform (634) is threadedly connected to the power screw rod (631), the other end of the support platform (634) is slidably connected to the sliding rod (632), and a telescopic driving cylinder (65) is arranged between the support platform (634) and the support section (612).

5. A semiconductor high temperature diffusion furnace according to claim 4, characterized in that: A power cavity (6121) is provided in the support section (612), a magnetic coupler (6122) is provided in the power cavity (6121), one end of the magnetic coupler (6122) facing the crystal boat frame (62) is dynamically connected to a rotor end (6123), a sealing cavity (6111) is provided in the sealing section (611), a driving disk (6112) is installed in the sealing cavity (6111), a limiting column (6113) is provided between the driving disk (6112) and the lower disk body (622), the driving disk (6112) and the rotor end (6123) are arranged in coordination, and a heat insulation layer (6114) is provided between the rotor end (6123) and the driving disk (6112).

6. A semiconductor high temperature diffusion furnace according to claim 5, characterized in that: The driving disk (6112) comprises a first disk body (6115) and a second disk body (6116), wherein the first disk body (6115) is located between the second disk body (6116) and the limiting column (6113), the diameter of the first disk body (6115) is larger than that of the second disk body (6116), and an auxiliary ring (6117) is provided between the first disk body (6115) and the bottom of the sealing cavity (6111), wherein the auxiliary ring (6117) comprises a first ring The first ring body (6118) and the second ring body (6119), the first ring body (6118) is arranged around the second ring body (6119), the second ring body (6119) is arranged around the second disk body (6116), and a plurality of rolling balls (6110) are arranged between the first ring body (6118) and the second ring body (6119), and a partial area of ​​the rolling balls (6110) is in contact with an end of the first disk body (6115) away from the limiting column (6113).

7. A semiconductor high temperature diffusion furnace according to claim 6, characterized in that: A limit cover (61111) is installed at one end of the power chamber (6121) away from the sealing chamber (6111); the rotor end (6123) comprises a driving section (6124) and a connecting section (6125); the driving section (6124) and the second disk (6116) are arranged opposite to each other; the connecting section (6125) is located between the driving section (6124) and the limit cover (61111); a limit ring (61112) is arranged at one end of the limit cover (61111) facing the driving section (6124); a plurality of supporting balls (61113) are arranged in the limit ring (61112); and a part of the supporting balls (61113) are in contact with the driving section (6124).

8. The semiconductor high temperature diffusion furnace according to claim 3, characterized in that: A plurality of arc-shaped fan blades (6213) are arranged at one end of the upper disk body (621) away from the lower disk body (622), and the plurality of arc-shaped fan blades (6213) are arranged around the center of the circle of the upper disk body (621). A plurality of through holes (6214) are arranged on the upper disk body (621), and one end of the through hole (6214) is connected to the top of the upper disk body (621), and the other end of the through hole (6214) is connected to the bottom of the upper disk body (621).

9. A semiconductor high temperature diffusion furnace according to claim 8, characterized in that: A wind blade (6231) is arranged on the side wall of the connecting column (623), and the length direction of the wind blade (6231) is the same as the length direction of the connecting column (623).

10. A semiconductor high temperature diffusion furnace according to claim 6, characterized in that: An annular air duct (64) is also provided in the sealed cavity (6111); an exhaust duct (641) is installed at the bottom of the sealing platform (61); a plurality of receiving air ducts (642) are provided between a side of the annular air duct (64) facing the second quartz tube (42) and the top of the sealed cavity (6111); and a secondary duct (643) is provided between the exhaust duct (641) and the annular air duct (64).

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