Test socket for IC testing and manufacturing method thereof

Abstract

The invention provides a test socket for integrated circuit (IC) testing. The socket includes an insulating support structure and a plurality of conductive posts. The insulation supporting structure is provided with a plurality of through holes used for containing the conductive columns. The conductive posts are partially embedded in the insulating support structure and extend through the vias to establish electrical connections for IC testing. The conductive columns are elastic, so that the conductive columns can adapt to warpage of IC packaging and variation caused by size tolerance of BGA solder balls. The insulation supporting structure is further provided with a plurality of grooves located beside the through holes, a part of the conductive column is embedded in the grooves, and stable attachment of the conductive column and the insulation supporting structure is enhanced. In addition, the test socket further comprises a short circuit prevention support located beside the conductive columns, and the short circuit prevention support is used for preventing the conductive columns from making contact with one another and causing short circuits. Moreover, the invention also provides a method for manufacturing the test socket.

Description

Technical Field

[0001] The present invention relates to the field of IC testing, and in particular to a test socket for IC testing and a manufacturing method thereof. Background Art

[0002] Integrated circuit testing (IC testing) is a critical process in the electronics industry, ensuring the functionality and reliability of ICs before they are integrated into various electronic devices. A common method of IC testing involves the use of a test socket that provides an electrical connection between the IC and the test circuit. This connection is usually achieved by conductive posts (also called elastic sockets) that are embedded in an insulating support within the test socket. The insulating support frame is usually designed with through holes to allow the conductive posts to pass through and establish the necessary electrical connections. The conductive posts are usually composed of conductive particles and soft materials (such as silicone) to provide elasticity that enables the posts to adapt to ICs of different sizes and shapes. However, the stable attachment of the conductive posts to the insulating support frame is a problem in the design and manufacture of test sockets. The strength of this attachment can affect the durability and life of the test socket, as well as the stability of the electrical connection during IC testing. In addition, the design of the test socket must also consider preventing short circuits. When the conductive posts are pressed down during IC testing, there is a risk that they may contact each other, causing a short circuit.

[0003] However, the conductive posts of current test sockets are often formed by compression molding, which is limited by the mold demolding method and cannot be raised in height, and the elastic space that can be tolerated is small. If the IC has solder balls of different sizes due to packaging process tolerances or warping deformation due to temperature differences, problems will arise when using the test socket, resulting in ineffective electrical contact or unstable contact between the IC to be tested and the test circuit. For example, the technology disclosed in US 7,726,984 B2, US 9,263,817 B2, and TW1800143 B uses an insulating support frame made of a harder material, such as Polyimide, to support an elastic conductor made of a softer material, such as Silicone. However, since the two are made of different materials, the fixing force between the elastic conductor and the insulating support frame is insufficient, and there is a problem of the conductor detaching from the bracket after long-term use. For example, the technology disclosed in US 9,488,675 B2 and KR100972662B1 is that the insulating support frame and the elastic conductive system are integrally formed with the same silicone material. This structure is mostly pressed by molds, but the metal powder particles remaining on the surface of the mold cannot be completely removed when the conductive adhesive is cured, which has potential risks of leakage and ion migration. In addition, since the material of the support frame is relatively soft, its service life is also relatively short.

[0004] Therefore, the above-mentioned defects are issues that are worth considering and solving by those with ordinary knowledge in this field. Summary of the invention

[0005] In order to solve the above problems, an object of the present invention is to provide a test socket for IC testing and a manufacturing method thereof.

[0006] Based on the above and other purposes, the present invention provides an enhanced test socket for IC testing, which enhances the stable attachment of the conductive pillars to the insulating support structure, thereby increasing the life of the test socket and the stability of the electrical connection during testing. To achieve the above and other objectives, the test socket includes an insulating support structure having a plurality of through holes, and a plurality of conductive pillars, wherein a portion of the conductive pillars are embedded in the insulating support structure and extend through the through holes.

[0007] In the above test socket, the insulating support structure includes a plurality of grooves located beside the through hole, and a portion of the conductive column is embedded in the grooves. The conductive column has a first portion located below the insulating support structure and a second portion located above the insulating support structure. The insulating support structure can be a hard support and a soft support, the soft support is located on the upper surface of the hard support, and the hard support layer is harder than the conductive column.

[0008] The hard support may be composed of multiple layers of different compositions. The groove may be located in the hard support. The test socket may also include a plurality of anti-short circuit supports located next to the conductive column, and the anti-short circuit supports are made of insulating material. The height of these anti-short circuit supports may be in the range of 0.7 to 4 times the height of the second portion of the conductive column.

[0009] The height of the first portion of the conductive column can be in the range of 10 to 100 microns, and the height of the second portion can be 2 to 10 times the height of the first portion. The ratio of the diameter of the first portion to the diameter of the second portion can be in the range of 5 / 6 to 6 / 5. The insulating support structure can be made of a material selected from the group consisting of polyimide, PCB material and ceramic material. The conductive column can be composed of conductive particles and silica gel, wherein the conductive particles are selected from the group consisting of metal powder, metal alloy powder, graphite powder, conductive compound and conductive plastic.

[0010] The present invention also provides a method for manufacturing a test socket for IC testing. The method comprises the following steps:

[0011] First, a layered structure including a first sacrificial layer, an insulating support layer, and a second sacrificial layer is formed. Then, a plurality of through holes are formed in the layered structure, and a plurality of grooves are formed in the through holes in the insulating support layer. Next, a conductive gel is filled into the through holes to form a plurality of conductive pillars. Finally, the first sacrificial layer and the second sacrificial layer are removed.

[0012] In some embodiments, the method further comprises the step of placing a plurality of anti-short circuit brackets beside the conductive pillars. In other embodiments, the method comprises forming a layered structure comprising a first sacrificial layer, an insulating support layer, an anti-short circuit layer and a second sacrificial layer.

[0013] In some embodiments, removing the first sacrificial layer and the second sacrificial layer comprises peeling off the first and second sacrificial layers or dissolving the first and second sacrificial layers with a solvent. In other embodiments, dissolving the first and second sacrificial layers with a solvent comprises hydrolysis, solvent dissolution or acid-base solution dissolution.

[0014] In some embodiments, the insulating support layer includes a hard support layer and a soft support layer, and the soft support layer is located above the hard support layer. In other embodiments, the hard support layer includes multiple thin layers of different compositions.

[0015] In some embodiments, the material of the first and second sacrificial layers is selected from the group consisting of normal photoresist, polyimide, polyvinyl alcohol (PVA) and silicone. In other embodiments, the thickness of the second sacrificial layer is 2 to 10 times the thickness of the first sacrificial layer.

[0016] In order to achieve the above and other purposes, the present invention adopts technical means, components and their effects, and a preferred embodiment is described below with reference to the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] Figure 1 FIG. 1 is a partial cross-sectional view of a test socket for IC testing according to an embodiment of the present invention.

[0018] FIG. 2A to FIG. 2D Shown are diameter ratios of the first portion and the second portion of different conductive pillars.

[0019] Figure 3 FIG. 1 is another embodiment of a test socket for IC testing according to the present invention.

[0020] Figure 4 Shown is Figure 1 Flowchart of the manufacturing process of the test socket.

[0021] Figure 5A-5E The diagram corresponds to Figure 4 Schematic diagram of the intermediate products in each step.

[0022] Figure 6 FIG. 2 is a flow chart of a manufacturing process of the test socket of FIG. 2 .

[0023] Figure 7A-7F The diagram corresponds to Figure 6 Schematic diagram of the intermediate products in each step.

[0024] Fig. 8A FIG. 1 is a schematic diagram of an intermediate product of one step in a manufacturing process of a test socket according to another embodiment.

[0025] Figure 8B FIG. 1 is another embodiment of a test socket for IC testing according to the present invention. DETAILED DESCRIPTION

[0026] Please refer to Figure 1 , Figure 1 The diagram is a partial cross-sectional view of one embodiment of a test socket for IC testing of the present invention. In this embodiment, the test socket 100 is used for IC testing (IC testing), and the test socket 100 includes an insulating support structure 110 and a plurality of conductive pillars 120. The insulating support structure 110 has a plurality of through holes 112, and the through holes 112 are used to accommodate the conductive pillars 120. The conductive pillars 120 are partially embedded in the insulating support structure 110 and extend through the through holes 112 to establish electrical connections for IC testing.

[0027] The conductive pillar 120 is flexible, so that it can adapt to the variation caused by the warpage of the IC package and the tolerance of the BGA solder ball size. In this embodiment, the conductive pillar 120 is composed of conductive particles 127 and soft material 128 (such as silicone). The conductive pillar 120 also includes two parts: one part (hereinafter referred to as the first part 122) is located below the insulating support structure 110, and the other part (hereinafter referred to as the second part 124) is located above the insulating support structure 110. The structure of the conductive pillar 120 as described above enables it to effectively bridge the gap between the IC and the test circuit, thereby facilitating the transmission of electrical signals during the test.

[0028] In addition to the through holes 112, the insulating support structure 110 also has a plurality of grooves 114 located next to the through holes 112. These grooves 114 provide a space for a portion of the conductive pillar 120 (hereinafter referred to as the protrusion 126) to be embedded, thereby enhancing the stable attachment of the conductive pillar 120 to the insulating support structure 110. Secondly, the grooves 114 also contribute to the overall structural integrity of the insulating support structure 110, thereby enhancing the strength and durability of the test socket 100. The sentence "the grooves 114 also contribute to the overall structural integrity of the insulating support structure 110, thereby enhancing the strength and durability of the test socket 100" here means that the grooves 114 play a key structural role in the insulating support structure 110, and they provide additional support so that the conductive pillar 120 can be more stably fixed in the insulating support structure 110. Thereby, the strength of the test socket 100 is enhanced, making it more able to withstand various pressures and stresses that may be encountered during IC testing. In addition, since the protrusion 126 of the conductive pillar 120 is embedded in the groove 114 , the contact area between the conductive pillar 120 and the insulating support structure 110 is increased, thereby enhancing the overall durability thereof.

[0029] In summary, the test socket 100 of the present embodiment, including its insulating support structure 110 and conductive pillar 120, provides a sturdy and flexible solution for IC testing. The insulating support structure 110 has a through hole 112 and a groove 114, and the conductive pillar 120 is partially embedded therein, ensuring a stable and reliable electrical connection for IC testing, while also enhancing the life of the test socket 100.

[0030] The components of the test socket 100 will be described in more detail below. Figure 1The insulating support structure 110 is a frame provided to the conductive pillars 120 in the test socket 100 and promotes the stable attachment of the conductive pillars 120. One of the features of the insulating support structure 110 is that it has a plurality of through holes 112, which are arranged so that the conductive pillars 120 can pass through them to establish the electrical connection required for IC testing. In addition to the through holes 112, the insulating support structure 110 also has a plurality of grooves 114 located next to the through holes 112. The arrangement of these grooves 114 is to enhance the stable attachment of the conductive pillars 120 to the insulating support structure 110. Specifically, a portion of the conductive pillars 120, namely, the protrusions 126, are embedded in these grooves 114, thereby increasing the contact area between the conductive pillars 120 and the insulating support structure 110. These increased contact areas enhance the adhesion between the conductive pillars 120 and the insulating support structure 110, and reduce the possibility of the conductive pillars 120 falling off the insulating support structure 110 during the test process. In addition, the groove 114 in the insulating support structure 110 also contributes to the overall structural integrity of the test socket 100. By providing additional support for the conductive post 120, the groove 114 helps maintain the alignment of the conductive post within the through hole 112, ensuring a stable and reliable electrical connection during IC testing. This design feature of the insulating support structure 110, combined with the flexibility of the conductive post 120, enables the test socket 100 to adapt to the variations caused by the warpage of the IC package and the tolerance of the BGA solder ball size, thereby enhancing its versatility and applicability in IC testing.

[0031] The conductive posts 120 provide electrical connections between the IC and the test circuit. The conductive particles 127 in these conductive posts 120 can be made of various materials, including metal powders, metal alloy powders, graphite powders, conductive compounds, and conductive plastics. The material selection of the conductive particles 127 can affect the conductivity, durability, and cost of the test socket 100. In addition, the first portion 122 of the conductive posts 120 is located below the insulating support structure 110, and its designed height is in the range of 10 to 100 microns. This height is to accommodate the process tolerances of the pads (Pad) on the test circuit to ensure a stable and reliable electrical connection during the test. The second portion 124 of the conductive posts 120 is located above the insulating support structure 110, and its designed height is 2 to 10 times the height of the first portion 122. The increased height of the second portion 124 is to accommodate the process tolerances of the IC and the deformation caused by temperature, further enhancing the versatility of the test socket 100.

[0032] In this embodiment, the diameter ratio of the first portion 122 to the second portion 124 is in the range of 5 / 6 to 6 / 5. This ratio can be adjusted according to the specific requirements of the IC and the test circuit, providing greater flexibility for the design of the test socket. The following are some examples:

[0033] 1. Please refer to Figure 2A , when the diameter ratio of the first portion 122 to the second portion 124 is 1.2:1, and the diameter of the conductive pillar 120 embedded in the insulating support structure 110 is the same as the diameter of the first portion 122. This design can be used when a larger contact area is required at the bottom of the conductive pillar 120 to more firmly attach to the test circuit board.

[0034] 2. Please refer to Figure 2B , when the diameter ratio of the first portion 122 to the second portion 124 is 1:1.2, and the diameter of the conductive pillar 120 embedded in the insulating support structure 110 is the same as the diameter of the second portion 124. This design can be used when a larger contact area is required on the top of the conductive pillar 120 for more stable attachment to the IC.

[0035] 3. Please refer to Figure 2C , the diameter ratio of the first portion 122 to the second portion 124 is 1:1, and the diameter of the conductive pillar 120 embedded in the insulating support structure 110 is larger than the diameter of the first portion 122 and the second portion 124. This design can be used when a larger contact area is required for both the IC and the test circuit, such as handling larger or more rugged components.

[0036] 4. Please refer to Figure 2D , the diameter ratio of the first portion 122 to the second portion 124 is 1:1, and the diameter of the conductive pillar 120 embedded in the insulating support structure 110 is smaller than the diameters of the first portion 122 and the second portion 124. This design can be used when a smaller contact area is required for both the IC and the test circuit, such as processing BGA components with smaller solder ball pitch or finer components.

[0037] These examples illustrate the flexibility of the design of the test socket 100 in adapting to the different requirements of ICs and test circuits. By adjusting the diameter ratio of the first portion 122 to the second portion 124 of the conductive post 120, as well as the diameter of the conductive post 120 embedded in the insulating support structure 110, the test socket 100 can be customized according to the specific requirements of different test scenarios.

[0038] Next, please refer to Figure 3 , Figure 3Another embodiment of the test socket for IC testing of the present invention is shown. In this embodiment, the insulating support structure 210 of the test socket 200 is composed of two clear brackets: a hard bracket 216 and a soft bracket 218. The two brackets are arranged in a stacked configuration, and the soft bracket 218 is located on the upper surface of the hard bracket 216. This stacked configuration provides a strong and flexible frame for the conductive column 120, which helps to firmly attach and align the conductive column 120 in the test socket 200. Among them, the hard bracket 216 forms the base of the insulating support structure 210, which is characterized by its hardness being greater than the hardness of the conductive column 120. This hardness of the hard bracket 216 enhances the structural integrity of the test socket 200 and provides a strong and durable support for the conductive column 120.

[0039] On the other hand, the soft bracket 218 is located on the upper surface of the hard bracket 216. This position of the soft bracket 218 enables it to provide a flexible and adaptable interface for the conductive column 120, accommodating the movement and deformation of the conductive column 120 during IC testing. The soft bracket 218 is made of a material that is softer than the hard bracket 216, providing the conductive column 120 with the required flexibility, while also helping to improve the overall durability of the test socket 200. The specific material of the soft bracket 218 may include various types of elastomers or flexible polymers. For example, silicone may be a suitable choice because it has good thermal stability and electrical insulation properties. Other possible materials may include thermoplastic elastomers, polyurethane rubbers, or polyvinyl chloride. These materials are known for their flexibility and durability, which will help to improve the overall durability of the test socket 200. Please note that the choice of material will also depend on other factors, such as the specific requirements of the IC testing process, cost considerations, and possible compatibility issues with other components of the test socket 200.

[0040] In summary, the hard bracket 216 and the soft bracket 218 form a composite insulating support structure 210 that combines the firmness of the hard bracket 216 with the flexibility of the soft bracket 218. This composite structure enhances the stable attachment of the conductive pillar 120 to the insulating support structure 210 and reduces the possibility of the conductive pillar 120 falling off the insulating support structure 210 during testing. In addition, the composite structure also helps to improve the overall durability and life of the test socket, making it a reliable and cost-effective solution for IC testing.

[0041] In addition, in the present embodiment, the test socket 200 further includes anti-short circuit brackets 230. These anti-short circuit brackets 230 are arranged next to the conductive posts 120 and are made of insulating material. The main function of these anti-short circuit brackets 230 is to prevent the conductive posts 120 from contacting each other and causing a short circuit. This is particularly important when the conductive posts 120 are pressed down during IC testing, because the downward pressure may cause the conductive posts to contact and cause a short circuit due to bending. By placing the anti-short circuit brackets 230 next to the conductive posts 120, the risk of short circuit is effectively reduced, and the reliability and safety of the test socket 200 during testing are improved. In addition, the anti-short circuit brackets 230 can also prevent the solder balls from being over-pressed and damaging the conductive socket.

[0042] The anti-short circuit brackets 230 located next to the conductive pillars 120 are made of insulating materials. The material selection of these anti-short circuit brackets 230 is crucial because it directly affects their effectiveness in preventing short circuits. The material of these anti-short circuit brackets 230 has high insulation to effectively prevent the conductive pillars 120 from contacting each other and causing a short circuit.

[0043] In one embodiment, the height of the anti-short circuit bracket 230 is designed to be 0.7 to 4 times the height of the second portion 124 of the conductive pillar 120. This height range ensures that the anti-short circuit bracket 230 is high enough to prevent the conductive pillar 120 from contacting, while being low enough not to interfere with the movement and deformation of the conductive pillar 120 during testing. This balance between height and flexibility allows the anti-short circuit bracket 230 to effectively prevent short circuits while also adapting to the dynamic nature of the conductive pillar 120 during IC testing.

[0044] In addition, in this embodiment, the groove 214 ( Figure 3 The structure and function of the groove 214 are similar to those of the hard support 216 of the insulating support structure 210. Figure 1 The groove 114 in FIG. 1 is similar to that in FIG. 1 , so it will not be described in detail here.

[0045] In summary, including the anti-short circuit brackets 230 as part of the test socket 200 improves the safety and reliability of the test socket 200 during IC testing. By preventing the conductive pillars 120 from contacting and causing a short circuit, these anti-short circuit brackets 230 help improve the overall performance and effectiveness of the test socket 200, making it a rugged and reliable solution for IC testing.

[0046] Please refer back Figure 1 And refer to Figure 4 and Figure 5A-5E The manufacturing process of the test socket 100 involves several steps. First, as shown in steps S110 and Figure 5AAs shown, a layered structure 100' is formed. The layered structure 100' includes a first sacrificial layer 105', an insulating support layer 110', and a second sacrificial layer 115'. The first sacrificial layer 105' and the second sacrificial layer 115' serve as temporary structures to help form the insulating support structure 110 and the conductive pillar 120. In an embodiment, the material of the first sacrificial layer 105' and the second sacrificial layer 115' is selected from the group consisting of normal photoresist, polyimide, polyvinyl alcohol (PVA) and silicone. These materials - normal photoresist, polyimide, polyvinyl alcohol (PVA) and silicone - can be removed by dissolution or stripping in a later step of the process, depending on the specific conditions and requirements of the process.

[0047] Then, execute step S120. Figure 5B As shown, after forming the layered structure 100', a plurality of through holes 112' are formed therein. These through holes 112' are appropriately positioned to accommodate the conductive pillars 120 and promote the stable attachment of the conductive pillars 120 to the insulating support layer 110'. The formation of these through holes 112' involves precise drilling or etching techniques to ensure that the size and position of these through holes 112' accurately correspond to the size and position of the conductive pillars 120.

[0048] After forming the through hole 112', step S130 is performed (eg Figure 5C As shown in the figure, grooves 114' are finely formed in the insulating support layer 110', especially at the boundaries of the through holes 112'. The purpose of designing these grooves 114' is to further enhance the stable adhesion of the conductive pillars 120 to the insulating support layer 110'. These grooves 114' are formed by a subtractive process, such as etching or carving, which allows a portion of the conductive pillars 120 to be embedded therein. This increases the contact area between the conductive pillars 120 and the insulating support structure 110, reduces the possibility of the conductive pillars 120 falling off from the insulating support structure 110 during the test process, and thus improves the overall reliability of the test socket 100.

[0049] After forming the through hole 112' and the groove 114', step S140 (eg Figure 5DAs shown in the figure, a conductive gel 120' is filled into the through hole 112'. This conductive gel 120' is composed of conductive particles 127 and soft material 128 (such as silica gel), and forms a conductive column 120 after curing. The conductive column 120 passes through the through hole 112', wherein a portion of the conductive column 120, namely the protrusion 126, is embedded in the groove 114' of the insulating support layer. The embedding of a portion of the conductive column 120 in the groove 114' enhances the stable attachment of the conductive column 120 to the insulating support structure 110. This increases the contact area between the conductive column 120 and the insulating support structure 110, reduces the possibility of the conductive column 120 falling off from the insulating support structure 110 during the test process, and thus improves the overall reliability of the test socket 100.

[0050] After forming the conductive pillar 120, step S150 (eg, Figure 5E ), the first sacrificial layer 105' and the second sacrificial layer 115' are removed. Such removal can be achieved by various methods, such as peeling off the first sacrificial layer 105' and the second sacrificial layer 115' or using a solvent to dissolve them. Removing the first sacrificial layer 105' and the second sacrificial layer 115' can expose the insulating support structure 110 and the conductive pillar 120, and the test socket 100 is completed.

[0051] Next, the manufacturing process of the test socket 200 will be described. Please refer to FIG. 2 and also to FIG. Figure 6 and Figure 7A-7F The manufacturing process of the test socket 200 involves several steps, firstly, step S210 and Fig. 7A As shown, a layered structure 200' is formed. This layered structure 200' includes a first sacrificial layer 205', an insulating support layer 210', and a second sacrificial layer 215'. The first sacrificial layer 205' and the second sacrificial layer 215' are temporary structures. In the present embodiment, the material of the first sacrificial layer 205' and the second sacrificial layer 215' is similar to or the same as the material of the first sacrificial layer 105' and the second sacrificial layer 115' described above, so they are not repeated. In addition, the insulating support layer 210' includes a hard support layer 216' and a soft support layer 218', and the soft support layer 218' is located above the hard support layer 216'.

[0052] Then, execute step S220. Figure 7B As shown, after forming the layered structure 200', a plurality of through holes 212' are formed therein. These through holes 212' are appropriately positioned to accommodate the conductive pillars 120 and promote the stable attachment of the conductive pillars 120 to the insulating support layer 210'. The method of making these through holes 212' is similar or the same as the method of making the through holes 112' described above, so it will not be repeated.

[0053] After forming the through hole 212', step S230 is performed (eg Figure 7C As shown in FIG. 2 , a groove 214 ′ is finely formed in the hard support layer 216 ′ of the insulating support layer 210 ′, particularly at the boundary of the through hole 212 ′.

[0054] After forming the through hole 212' and the groove 214', step S240 (eg Fig.7D As shown in FIG. 2 , a conductive gel 120′ is filled into the through hole 212′. The conductive gel 120′ is composed of conductive particles 127 and soft material 128, and forms a conductive column 120 after solidification. The conductive column 120 passes through the through hole 212′, wherein a portion of the conductive column 120 is embedded in the groove 214′ of the insulating support layer.

[0055] After forming the conductive pillar 120, step S250 is performed (eg Fig. 7E ), remove the first sacrificial layer 205' and the second sacrificial layer 215'. This removal can be achieved by various methods, such as peeling off the first sacrificial layer 205' and the second sacrificial layer 215' or using a solvent to dissolve them. Removing the first sacrificial layer 205' and the second sacrificial layer 215' can expose the conductive pillar 120 and the insulating support structure 210 including the hard support 216 and the soft support 218, completing the main part of the test socket 200.

[0056] In this embodiment, step S260 (such as Figure 7F As shown in FIG. 1 , the anti-short circuit brackets 230 are placed next to the second portion 124 of the conductive pillar 120. These anti-short circuit brackets 230 are made of insulating material and are used to prevent the conductive pillars 120 from contacting each other and causing a short circuit. Placing these brackets next to the conductive pillars effectively reduces the risk of short circuits and improves the safety and reliability of the test socket 200 during IC testing.

[0057] In addition, in some embodiments, the hard support layer 216' of the insulating support structure 110 or the insulating support layer 210' includes multiple layers of different compositions. In other words, in the insulating support structure 110, the hard support layer 216' of the insulating support layer 210' may be made of multiple layers of different materials. These materials can be selected based on their etching selectivity, that is, their resistance to the etching process. When the hard support layer 216' of the insulating support structure 110 or the insulating support layer 210' is subjected to an etching process to form the groove 214', the layer with lower etching selectivity will be etched faster than the layer with higher etching selectivity. Such different etching rates allow the groove 214' to be formed in the desired area of ​​the hard support layer 216' of the insulating support structure 110 or the insulating support layer 210'.

[0058] Additionally, in certain embodiments, Fig. 8AAs shown, the layered structure 300' includes a first sacrificial layer 105', an anti-short circuit support layer 330', an insulating support layer 110', and a second sacrificial layer 115'. The anti-short circuit support layer 330' is the base material of the anti-short circuit support 330. After the layered structure 300' undergoes steps similar to the above steps S220-S250, a structure as shown in FIG. Figure 8B The test socket 300 shown in the figure. The advantage of such a design is that the anti-short circuit bracket 330 can be directly formed in the process, thereby improving the process efficiency. Therefore, compared with the test socket 200, the anti-short circuit bracket 330 in the test socket 300 is closely connected to the conductive column 120 without any gap.

[0059] The materials of the components of the above-mentioned test sockets 100, 200, 300, including the insulating support structure, the conductive column and the anti-short circuit bracket, are carefully selected to optimize the performance and durability of the test sockets 100, 200, 300. For example, the insulating support structure 110 or the hard bracket 216 of the insulating support structure 210 is made of a material selected from a specific material group. This material group includes polyimide, PCB material and ceramic material. Each of these materials has specific properties that contribute to the overall performance of the test socket. For example, polyimide is known for its excellent thermal stability, electrical insulation and mechanical strength, making it a suitable choice for the hard bracket 216 of the insulating support structure 110 or the insulating support structure 210. Similarly, PCB material and ceramic material are also known for their robustness and durability, which helps to improve the life of the test socket 100, 200, 300.

[0060] In addition, the conductive column 120 provides electrical connection for IC testing and is composed of conductive particles 127 and soft material 128. The conductive particles 127 can be selected from a material group including metal powder, metal alloy powder, graphite powder, conductive compound and conductive plastic. The material selection of the conductive particles 127 can affect the conductivity and durability of the conductive column 120. The soft material 128, such as silicone, provides elasticity, so that the conductive column 120 can adapt to the variations caused by the warpage of the IC package and the tolerance of the BGA solder ball size.

[0061] Furthermore, the anti-short circuit bracket 230, 330 located next to the conductive pillar 120 is made of an insulating material. This material is selected because of its high insulation, which effectively prevents the conductive pillars 120 from contacting each other and causing a short circuit. The material selection of the anti-short circuit bracket 230, 330 helps to improve the safety and reliability of the test socket 200, 300 during IC testing. Some possible materials for the anti-short circuit bracket 230, 330 include:

[0062] 1. Plastics, such as polyvinyl chloride or polyethylene terephthalate;

[0063] 2. Ceramics;

[0064] 3. Composite materials, such as glass fiber or carbon fiber composite materials;

[0065] 4. Insulating polymers, such as polyimide or polytetrafluoroethylene (Teflon).

[0066] In summary, the present invention provides multiple advantages over conventional IC test sockets. One advantage of the present invention is that grooves are added to the insulating support structure, which are located next to the through holes, and they provide a space for a portion of the conductive column to be embedded, thereby enhancing the stable attachment of the conductive column to the insulating support structure. By enhancing the stable attachment of the conductive column to the insulating support structure, the life of the test socket and the stability of the electrical connection during testing are increased. In addition, the test socket includes an anti-short circuit bracket located next to the conductive column, which reduces the risk of short circuit during testing. This feature improves the safety and reliability of the test socket, making it a solid solution for IC testing. Moreover, the use of hard brackets and soft brackets in the insulating support structure provides a solid and flexible frame for the conductive column. This composite structure enhances the stable attachment of the conductive column to the insulating support structure and reduces the possibility of the conductive column falling off the support structure during testing. In addition, the composite structure also helps to improve the overall durability and life of the test socket, making it a reliable and cost-effective solution for IC testing.

[0067] The invention is described above, but it is not intended to limit the scope of the patent rights claimed by the invention. Any changes or modifications made by those skilled in the art without departing from the spirit or scope of this patent shall be considered as equivalent changes or designs completed under the spirit disclosed by the invention and shall be included in the claims of the invention.

Claims

1. A test socket for IC testing, characterized in that: The test socket includes: an insulating support structure comprising a plurality of through holes; and A plurality of conductive pillars embedded in the insulating support structure and extending through the through hole, the conductive pillars comprising a first portion and a second portion, wherein the first portion is located below the insulating support structure and the second portion is located above the insulating support structure; The insulating support structure further includes a plurality of grooves, which are located on two sides of the through hole, and a portion of the conductive column is embedded in the grooves.

2. The test socket according to claim 1, characterized in that: The insulating support structure comprises a hard support and a soft support, wherein the soft support is located on the upper surface of the hard support, and the hardness of the hard support is harder than that of the conductive column.

3. The test socket according to claim 2, characterized in that: The rigid support includes multiple thin layers composed of different materials.

4. The test socket according to claim 2, characterized in that: The groove is located in the hard bracket.

5. The test socket according to claim 1, wherein: The invention also comprises a plurality of anti-short circuit brackets, which are located beside the conductive pillars and are made of insulating materials.

6. The test socket according to claim 5, characterized in that: The height of the anti-short circuit bracket is in the range of 0.7 to 4 times the height of the second portion of the conductive column.

7. The test socket according to claim 1, wherein: The height of the first portion is in the range of 10 to 100 microns.

8. The test socket according to claim 1, wherein: The height of the second portion is 2 to 10 times the height of the first portion.

9. The test socket according to claim 1, wherein: The ratio of the diameter of the first portion to the diameter of the second portion is in the range of 5 / 6 to 6 / 5.

10. The test socket according to claim 1, wherein: The insulating support structure is made of a material selected from the group consisting of polyimide, PCB material and ceramic material.

11. The test socket according to claim 1, wherein: The conductive column includes conductive particles and silica gel.

12. The test socket according to claim 11, wherein: The conductive particles are selected from the group consisting of metal powder, metal alloy powder, graphite powder, conductive compounds and conductive plastics.

13. A method for manufacturing a test socket, the test socket being used for IC testing, characterized in that: The method comprises the following steps: forming a layered structure comprising a first sacrificial layer, an insulating support layer, and a second sacrificial layer; forming a plurality of through holes in the layered structure; forming a plurality of grooves in the through hole in the insulating support layer; filling the conductive gel into the through holes and the grooves to form a plurality of conductive pillars; and The first sacrificial layer and the second sacrificial layer are removed.

14. The method for manufacturing a test socket according to claim 13, characterized in that: The method also includes forming at least one anti-short circuit bracket and placing it beside the conductive column.

15. A method for manufacturing a test socket, the test socket being used for IC testing, characterized in that: The method comprises the following steps: forming a layered structure comprising a first sacrificial layer, an insulating support layer, an anti-short circuit layer, and a second sacrificial layer; forming a plurality of through holes in the layered structure; forming a plurality of grooves in the through hole in the insulating support layer; Filling the conductive gel into the through holes and the grooves to form a plurality of conductive pillars; The first sacrificial layer and the second sacrificial layer are removed.

16. The method according to claim 13 or 15, characterized in that The step of removing the first sacrificial layer and the second sacrificial layer includes peeling off the first sacrificial layer and the second sacrificial layer or using a solvent to dissolve the first sacrificial layer and the second sacrificial layer.

17. The method according to claim 16, characterized in that The step of using the solvent to dissolve the first sacrificial layer and the second sacrificial layer comprises hydrolysis, solvent dissolution or acid-base solution dissolution.

18. The method according to claim 13 or 15, characterized in that Forming the insulating support layer includes forming a hard support layer and a soft support layer, wherein the soft support layer is located above the hard support layer.

19. The method according to claim 18, characterized in that Forming the hard support layer includes forming a plurality of thin layers composed of different materials.

20. The method according to claim 13 or 15, characterized in that The materials of the first sacrificial layer and the second sacrificial layer are selected from the group consisting of normal phase photoresist, polyimide, polyvinyl alcohol and silica gel.

21. The method according to claim 13 or 15, characterized in that The thickness of the second sacrificial layer is 2 to 10 times the thickness of the first sacrificial layer.

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