Packaging structure of microwave photon transceiving integrated device

Abstract

The invention discloses a packaging structure of a microwave photon transceiving integrated device, which comprises a tube shell, the tube shell comprises a cavity, a driving circuit board is arranged in the cavity, the driving circuit board is respectively connected with a light receiving unit, a light emitting unit and a radio frequency microwave circuit, the light receiving unit is connected with the light emitting unit through the radio frequency microwave circuit, and the light receiving unit is connected with the light emitting unit through the radio frequency microwave circuit. The bottom of the cavity is connected with the fuzz button, the fuzz button is connected with the radio frequency microwave circuit, the light receiving unit and the light emitting unit are integrated in one cavity, receiving and emitting of microwave signals are integrated in one cavity, the integration level is improved, the fuzz button with the smaller size is used for replacing an SSMP radio frequency connector, and the cost is reduced. The size of the whole device is reduced, the size of the microwave photonic device is reduced, and the problems that receiving and transmitting of microwave signals are achieved based on discrete devices, the integration level is low, external interfaces all adopt SSMP radio frequency connectors or glass sintering terminals, and the size of the microwave photonic device is large are solved.

Description

Technical Field

[0001] The present invention relates to the technical field of microwave photons, and in particular to a packaging structure of a microwave photon transceiver integrated device. Background Art

[0002] As the most critical link in the microwave optical transmission (RoF) link, the reception and transmission of microwave signals are realized through microwave electro-optical / photoelectric conversion technology, which solves the serious problems of traditional RF microwave transmission technology such as short transmission distance, large volume, and weak anti-interference ability. It has been widely promoted and used in military fields such as electronic countermeasures and radar communications, and civil fields such as mobile communications. However, with the continuous in-depth application of microwave optical transmission technology, the rapid iteration of military equipment, and the continuous upgrading of civil communication equipment, the requirements of "high integration, low profile, cable-free, and simple structure" are becoming more and more prominent.

[0003] For example, the Chinese patent application with publication number CN114284258A discloses an ultra-high integrated multi-channel parallel optoelectronic conversion component, including an outer shell and a power protection circuit board, a power wiring board and multiple integrated cavities arranged in the outer shell, each integrated cavity is provided with a detector chip, a radio frequency amplifier and a radio frequency adjustable attenuator; in each integrated cavity, the detector chip is connected to the optical coupling system at the top of the cavity, and the radio frequency adjustable attenuator is connected to the SSMP connector arranged at the bottom of the cavity; the radio frequency amplifier is arranged between the detector chip and the radio frequency adjustable attenuator; the detector chip and the radio frequency amplifier, the radio frequency amplifier and the radio frequency adjustable attenuator, and the radio frequency adjustable attenuator and the SSMP connector are all connected by microstrip lines.

[0004] The above-mentioned public document combines the advantages of microwave light such as high bandwidth, low loss and anti-interference, and adopts micro-assembly technology to integrate detectors, amplifiers and attenuators in a multi-channel hybrid manner. It has the characteristics of high integration and adjustable attenuation.

[0005] However, the above microwave photon transceiver technology has the following main disadvantages: 1) Low integration. Currently, the reception and transmission of microwave signals are realized based on discrete devices. That is, the reception of microwave signals is realized by detectors, while the transmission of microwave signals is realized by lasers or modulators. As a result, the entire microwave optical transmission link is long, complex in structure, and high in cost, which cannot meet the rapidly developing application needs of optical transmission technology. 2) Large size. The external interfaces of current microwave photonic devices all use SSMP RF connectors or glass sintered terminals, which results in the microwave photonic devices being generally large in size. In particular, the thickness is generally not less than 7mm, which cannot meet the array and low-profile requirements of the OEMs. Summary of the invention

[0006] In view of the deficiencies in the above-mentioned background technology, the present invention proposes a packaging structure of a microwave photonic transceiver integrated device, which solves the technical problems that the reception and transmission of existing microwave signals are based on discrete devices, the integration is low, the external interfaces all use SSMP RF connectors or glass sintered terminals, and the size of microwave photonic devices is large.

[0007] The technical solution of the present invention is implemented as follows: a packaging structure of a microwave photon transceiver integrated device, including a tube shell, the tube shell includes a cavity, a driving circuit board is arranged in the cavity, a light receiving unit, a light emitting unit and a radio frequency microwave circuit are respectively connected to the driving circuit board, the light receiving unit and the light emitting unit are connected through the radio frequency microwave circuit, and a wool button is connected to the bottom of the cavity, and the wool button is connected to the radio frequency microwave circuit.

[0008] Preferably, an operational amplifier chip is provided on the driving circuit board.

[0009] Preferably, the light receiving unit comprises a detector chip, the detector chip is fixed on a ceramic substrate, and the ceramic substrate is fixed in the cavity.

[0010] Preferably, a thin film circuit having capacitors and resistors is provided on the ceramic substrate, a conical inductor is connected to the power supply end of the detector chip, the driving circuit board is connected to the detector chip through the conical inductor and the thin film circuit, and the detector chip is connected to the radio frequency microwave circuit through the ceramic substrate.

[0011] Preferably, an angled optical fiber for connecting to an FC / APC connector is provided in the cavity, and the angled optical fiber is connected to the detector chip.

[0012] Preferably, the optical transmission unit includes a modulator chip, a FA optical fiber array is connected to the modulator chip, a coupling optical fiber for connecting to an FC / APC connector is provided in the cavity, the FA optical fiber array is connected to the coupling optical fiber, and the modulator chip is connected to the RF microwave circuit.

[0013] Preferably, the modulator chip is fixed on a CWP ceramic substrate, and the CWP ceramic substrate is fixed in the cavity.

[0014] Preferably, a capacitor is connected in series to the radio frequency microwave circuit.

[0015] Preferably, the RF microwave circuit includes a digitally controlled attenuator, a low-noise amplifier and a RF single-pole double-throw switch. The digitally controlled attenuator is arranged between the modulator chip and the low-noise amplifier. One end of the RF single-pole double-throw switch is connected to the ceramic substrate and the other end is connected to the low-noise amplifier.

[0016] Preferably, the modulator chip is connected to the digitally controlled attenuator via a 50Ω ceramic microstrip.

[0017] Preferably, the radio frequency single-pole double-throw switch is connected to the hairy button via a 5880 microstrip line.

[0018] Preferably, the digitally controlled attenuator is fixed on a tungsten-copper gasket, and the tungsten-copper gasket is fixed in the cavity.

[0019] Preferably, the fixed part of the wool button is fixed inside the cavity by a glass sintering process, the wool button is electrically connected to a 5880 microstrip line in the cavity by bonding a gold wire or a gold ribbon, and the floating part of the wool button is embedded outside the cavity.

[0020] Preferably, the fixing part of the wool button comprises a central conductor and an insulator, the insulator is fixed in the cavity, and the central conductor is arranged on the insulator.

[0021] Preferably, the insulator is made of glass having the same expansion coefficient as the 4J29 alloy.

[0022] Preferably, the fur button includes a radio frequency fur button and a low frequency fur button, the radio frequency fur button and the low frequency fur button are respectively arranged at the bottom of the cavity, and the radio frequency fur button and the low frequency fur button are respectively connected to the 5880 microstrip line.

[0023] Preferably, the cavity is integrally formed from 4J29 alloy.

[0024] Preferably, a cover plate is detachably connected to the cavity.

[0025] Beneficial effects of the present invention: 1. The present invention integrates the optical receiving unit and the optical transmitting unit in one cavity, so that the receiving and transmitting of microwave signals are integrated in one cavity, which improves the integration level, and uses a smaller wool button to replace the SSMP RF connector, so that the volume of the entire device is reduced, and the size of the microwave photonic device is greatly reduced.

[0026] 2. The present invention adopts an elastic connection with end face contact to replace the cable connection, so as to simplify the radio frequency optical transmission system and minimize the link loss.

[0027] 3. The device package of the present invention adopts a single cavity structure, and all circuits and functional modules are integrated in the same cavity, which has a simple structure and high reliability. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] In order to more clearly illustrate the embodiments of the present invention, the accompanying drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings in the following description are only some embodiments of the present invention. For ordinary technicians in this field, other accompanying drawings can be obtained based on these accompanying drawings without paying any creative work.

[0029] Figure 1 It is a schematic diagram of the connection between the present invention and the FC / APC connector.

[0030] Figure 2 It is the front view of the present invention.

[0031] Figure 3 It is a top view of the present invention.

[0032] Figure 4 It is a bottom view of the present invention.

[0033] Figure 5 It is a connection diagram of the cavity, the driving circuit board, the light receiving unit, the light emitting unit and the radio frequency microwave circuit of the present invention.

[0034] Figure 6 It is a schematic diagram of the connection between the cavity, the radio frequency wool button and the low frequency wool button of the present invention.

[0035] In the figure: 1 is a tube shell, 1-1 is a cavity, 1-2 is a cover plate, 1-3 is an RF wool button, 1-4 is a low-frequency wool button, 2 is an RF microwave circuit, 2-1 is a CWP ceramic substrate, 2-2 is a 50Ω ceramic microstrip, 2-3 is a digitally controlled attenuator, 2-4 is a tungsten copper gasket, 2-5 is a low-noise amplifier, 2-6 is a capacitor, 2-7 is an RF single-pole double-throw switch, 2-8 is a 5880 microstrip line, 3-1 is a coupled optical fiber, 3-2 is a FA optical fiber array, 3-3 is a modulator chip, 3-4 is a beveled optical fiber, 3-5 is a detector chip, 3-6 is a ceramic substrate, 3-7 is a tapered inductor, 3-8 is a FC / APC connector, 4 is a driver circuit board, and 4-1 is an operational amplifier chip DETAILED DESCRIPTION

[0036] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0037] Embodiment 1, a packaging structure of a microwave photon transceiver integrated device, such as Figure 1 , Figure 5 and Figure 6As shown, it includes a tube shell 1, and the tube shell 1 includes a cavity 1-1. A driving circuit board 4 is arranged in the cavity 1-1. A light receiving unit, a light emitting unit and a radio frequency microwave circuit 2 are respectively connected to the driving circuit board 4. The light receiving unit and the light emitting unit are connected through the radio frequency microwave circuit 2. A fur button is connected to the bottom of the cavity 1-1, and the fur button is connected to the radio frequency microwave circuit 2. The light receiving unit and the light emitting unit are integrated in one cavity, so that the receiving and transmitting of microwave signals are integrated in one cavity, which improves the integration degree, and the smaller fur button is used to replace the SSMP radio frequency connector, so that the volume of the whole device is reduced, and the size of the microwave photonic device is greatly reduced, which solves the technical problems that the reception and transmission of the existing microwave signal are realized based on discrete devices, the integration degree is low, and the external interface adopts SSMP radio frequency connectors or glass sintered terminals, and the size of the microwave photonic device is large.

[0038] The present application integrates one receiving function and one transmitting function (transmission is to convert electrical signals into optical signals) in one package. The advantage of this is that one device can realize both receiving and transmitting functions, thereby realizing two-way transmission of signals. The external electrical interface adopted in the present application is a wool button, which can not only realize the low profile of the device packaging structure of the present application, but also replace the existing cable connection by contacting and connecting with the end face of the external device, thereby realizing the "cableless" requirement and avoiding link loss.

[0039] Embodiment 2, based on embodiment 1, a packaging structure of a microwave photon transceiver integrated device, such as Figure 1 and Figure 5 As shown, the driving circuit board 4 is provided with an operational amplifier chip 4-1, wherein the operational amplifier chip 4-1 converts the current signal output by the detector chip into a voltage signal, and the driving circuit board 4 is respectively connected to the radio frequency microwave circuit 2, the light receiving unit and the light emitting unit. The light receiving unit and the light emitting unit are arranged on the driving circuit board 4 at intervals, and the light receiving unit and the light emitting unit are electrically connected through the radio frequency microwave circuit 2. Preferably, the driving circuit board 4 is electrically connected to the chips and components in the cavity 1-1 through gold wires or gold belts to realize power supply and control functions.

[0040] The RF microwave circuit 2 uses gold wire bonding to achieve interconnection between the chip, microstrip line, ceramic substrate, and wool button. The gold wire in the circuit is simulated using HFSS software to determine the position, length, arc, and number of gold wire bonds to reduce the packaging parasitic parameters.

[0041] Embodiment 3, based on embodiment 2, a packaging structure of a microwave photon transceiver integrated device, such as Figure 1 and Figure 5As shown, the light receiving unit includes a detector chip 3-5, and the detector chip 3-5 is fixed on a ceramic substrate 3-6, and the ceramic substrate 3-6 is fixed in the cavity 1-1. The detector chip 3-5 is fixed to the ceramic substrate 3-6 by conductive glue, and the ceramic substrate 3-6 is fixed to the driving circuit board 4 by conductive glue. The detector chip 3-5 is set to convert the optical signal into an electrical signal to realize the reception of the microwave signal.

[0042] Embodiment 4, based on embodiment 3, a packaging structure of a microwave photon transceiver integrated device, such as Figure 5 As shown, a thin film circuit with capacitors and resistors is provided on the ceramic substrate 3-6, a conical inductor 3-7 is connected to the power supply end of the detector chip 3-5, the driving circuit board 4 is connected to the detector chip 3-5 through the conical inductor 3-7 and the thin film circuit, and the detector chip 3-5 is connected to the RF microwave circuit 2 through the ceramic substrate 3-6. The setting of the conical inductor 3-7 can improve the flatness on the one hand, and on the other hand, it can block other high-frequency signals from crosstalk and improve the isolation between multiple channels. The transmission impedance of the RF signal is 50 ohms, and the loss is minimal. The output impedance of the detector chip 3-5 is about several thousand ohms. The output impedance of the detector chip 3-5 can be lowered to 50 ohms through the thin film circuit to achieve the purpose of impedance matching.

[0043] Embodiment 5, based on embodiment 4, a packaging structure of a microwave photon transceiver integrated device, such as Figure 5 As shown, the cavity 1-1 is provided with an inclined optical fiber 3-4 for connecting to the FC / APC connector 3-8, and the inclined optical fiber 3-4 is connected to the detector chip 3-5. The inclined optical fiber 3-4 refers to an optical fiber that is tilted, and the connection between the optical fiber and the detector chip 3-5 is tilted. Preferably, the coupling between the optical fiber and the detector chip 3-5 adopts a 42° bevel design, and the full emission of the optical fiber end face is achieved through the 42° optical fiber bevel design, and the coupling efficiency between the optical fiber and the detector chip 3-5 reaches 90% or more.

[0044] Embodiment 6, based on embodiment 5, a packaging structure of a microwave photon transceiver integrated device, such as Figure 5As shown, the optical transmission unit includes a modulator chip 3-3, the modulator chip 3-3 is connected to a FA fiber array 3-2, the cavity 1-1 is provided with a coupling fiber 3-1 for connecting to an FC / APC connector 3-8, the FA fiber array 3-2 is connected to the coupling fiber 3-1, and the modulator chip 3-3 is connected to the RF microwave circuit 2. The modulator chip 3-3 modulates the microwave signal in the optical carrier to form a modulated optical signal to realize the emission of the microwave signal. The modulated optical signal is introduced into the FA fiber array 3-2 after coupling, and is output to the outside of the device through the FA fiber array 3-2 and the FC / APC connector 3-8.

[0045] The modulator chip 3-3 and the detector chip 3-5 are connected through the RF microwave circuit 2. The design of the RF microwave circuit 2 solves the impedance mismatch and mode field mismatch problems of the RF signals of the modulator chip 3-3 and the detector chip 3-5, ensures that the output impedance of the RF signal is 50Ω, and can realize the optical transmission of 40GHz ultra-wideband RF signals. At the same time, the converted RF signal is gain compensated and attenuated to achieve high-quality transmission of analog signals.

[0046] Embodiment 7, based on embodiment 6, a packaging structure of a microwave photon transceiver integrated device, such as Figure 5 As shown, the modulator chip 3-3 is fixed on the CWP ceramic substrate 2-1, and the CWP ceramic substrate 2-1 is fixed in the cavity 1-1. The modulator chip 3-3 is fixed on the CWP ceramic substrate 2-1 through conductive glue, and the CWP ceramic substrate 2-1 is fixed on the driving circuit board 4 through conductive glue.

[0047] Embodiment 8, based on any one of Embodiments 1 to 7, a packaging structure of a microwave photon transceiver integrated device, such as Figure 5 As shown, capacitors 2-6 are connected in series to the radio frequency microwave circuit 2. The purpose of connecting the capacitors 2-6 in series to the radio frequency microwave circuit 2 is to filter out noise, wherein the number of capacitors 2-6 in series to the radio frequency microwave circuit 2 can be set according to actual needs.

[0048] Embodiment 9, based on embodiment 8, a packaging structure of a microwave photon transceiver integrated device, such as Figure 5 As shown, the RF microwave circuit 2 includes a digitally controlled attenuator 2-3, a low noise amplifier 2-5 and a RF single-pole double-throw switch 2-7. The digitally controlled attenuator 2-3 is arranged between the modulator chip 3-3 and the low noise amplifier 2-5. One end of the RF single-pole double-throw switch 2-7 is connected to the ceramic substrate 3-6, and the other end is connected to the low noise amplifier 2-5. The RF single-pole double-throw switch 2-7 can select an existing RF single-pole double-throw switch. Currently, the RF single-pole double-throw switch 2-7 is widely studied and relatively mature, which will not be described here.

[0049] Embodiment 10, based on embodiment 9, a packaging structure of a microwave photon transceiver integrated device, such as Figure 5 As shown, the modulator chip 3-3 is connected to the digitally controlled attenuator 2-3 through a 50Ω ceramic microstrip 2-2. The microwave circuit is composed of the 50Ω ceramic microstrip 2-2, the low noise amplifier 2-5, the digitally controlled attenuator 2-3 and the CWP ceramic substrate 2-1. The microwave circuit is electromagnetically simulated using HFSS software to ensure impedance matching of each part of the circuit to ensure high-quality signal transmission. The digitally controlled attenuator 2-3 and the low noise amplifier 2-5 are connected in series between the microstrip lines to ensure high-quality transmission of the RF signal.

[0050] Embodiment 11, based on embodiment 10, a packaging structure of a microwave photon transceiver integrated device, such as Figure 5 As shown, the RF single-pole double-throw switch 2-7 is connected to the button through a 5880 microstrip line 2-8. The button can be connected to the 5880 microstrip line 2-8 by contacting the end surface, without the need for cable connection, thus achieving the "cableless" requirement and avoiding link loss.

[0051] Embodiment 12, based on embodiment 11, a packaging structure of a microwave photon transceiver integrated device, such as Figure 5 As shown, the digital controlled attenuator 2-3 is fixed on the tungsten copper gasket 2-4, and the tungsten copper gasket 2-4 is fixed in the cavity 1-1. The tungsten copper gasket 2-4 is fixed on the driving circuit board 4 in the cavity 1-1 through conductive glue, and the digital controlled attenuator 2-3 is fixed on the tungsten copper gasket 2-4 through conductive glue.

[0052] Embodiment 13, based on embodiment 12, a packaging structure of a microwave photon transceiver integrated device, such as Figure 1 , Figure 5 and Figure 6 As shown, the fixed part of the wool button is fixed inside the cavity 1-1 by a glass sintering process, which ensures the sealing effect of the connection between the fixed part of the wool button and the cavity 1-1 to ensure the airtightness of the cavity 1-1. The wool button is electrically connected to the 5880 microstrip line 2-8 in the cavity 1-1 through a bonding gold wire or a gold ribbon. The floating part of the wool button is embedded outside the cavity 1-1, and the floating part of the wool button can be conductive by contacting the end face of the external device.

[0053] Embodiment 14, based on embodiment 13, a packaging structure of a microwave photon transceiver integrated device, such as Figure 1 , Figure 5 and Figure 6As shown, the fixed part of the wool button includes a central conductor and an insulator, wherein the insulator is fixed in the cavity 1-1, and the central conductor is arranged on the insulator, wherein the central conductor is similar to a spring and can be axially compressed, and the central conductor is used for electrical connection, that is, the elastic connection of the central conductor replaces the cable connection, so that the radio frequency optical transmission system is simplified and the link loss is minimized. The central conductor is the floating part of the wool button in Example 13.

[0054] Embodiment 15, based on embodiment 14, a packaging structure of a microwave photon transceiver integrated device, such as Figure 6 As shown, the insulator is made of glass material with the same expansion coefficient as the 4J29 alloy. When the expansion coefficient of the insulator is the same as the expansion coefficient of the 4J29 alloy, the insulator is fixed on the cavity 1-1 through a sintering process, and the airtightness of the cavity 1-1 is effectively guaranteed.

[0055] Embodiment 16, based on any one of Embodiments 9 to 15, a packaging structure of a microwave photon transceiver integrated device, such as Figure 1 , Figure 5 and Figure 6 As shown, the hair button includes a radio frequency hair button 1-3 and a low frequency hair button 1-4, and the radio frequency hair button 1-3 and the low frequency hair button 1-4 are respectively arranged at the bottom of the cavity 1-1, and the radio frequency hair button 1-3 and the low frequency hair button 1-4 are respectively connected to the 5880 microstrip line 2-8. After the microwave signal reaches the branch port of the radio frequency single-pole double-throw switch 2-7 along the 5880 microstrip line 2-8, it is transmitted to the radio frequency hair button 1-3 from the common port of the radio frequency single-pole double-throw switch 2-7 under the control of the driving circuit, and the microwave signal is transmitted from the outside to the inside of the device through the radio frequency hair button 1-3. The radio frequency hair button 1-3 is used to transmit radio frequency signals, and impedance matching and grounding must be considered in the structure. The low frequency hair button 1-4 is used to transmit control signals and power supply, and only conductivity needs to be ensured.

[0056] Embodiment 17, based on embodiment 16, a packaging structure of a microwave photon transceiver integrated device, such as Figure 1 , Figure 2 , Figure 3 , Figure 4 and Figure 5As shown, the cavity 1-1 is integrally formed from 4J29 alloy. That is, the cavity 1-1 is formed from a whole piece of 4J29 alloy through fine processing, and the surface of the cavity 1-1 is preferably gold-plated. The integrally formed cavity 1-1 effectively ensures the structural strength of the cavity 1-1. The cavity 1-1 is made of 4J29 alloy because the 4J29 alloy has a linear expansion coefficient similar to that of silicon borosilicate hard glass in the temperature range of 20 to 450°C. This property enables the alloy to be tightly sealed with hard glass in the electric vacuum industry to manufacture highly airtight components. Secondly, the Curie point of the 4J29 alloy is relatively high, and its expansion coefficient maintains a good match with hard glass in a wider temperature range, further ensuring the firmness of the seal.

[0057] Embodiment 18, based on embodiment 17, a packaging structure of a microwave photon transceiver integrated device, such as Figure 1 , Figure 2 , Figure 3 , Figure 4 and Figure 5 As shown, the cavity 1-1 is detachably connected to a cover plate 1-2. A sealed space is formed between the cavity 1-1 and the cover plate 1-2 to prevent external factors from affecting the electrical components in the cavity 1-1. In addition, the cavity 1-1 and the cover plate 1-2 are detachably connected, and the detachable connection improves the convenience of removing the cover plate 1-2. Preferably, the cover plate 1-2 is processed by an etching process to ensure the dimensional accuracy and flatness of the cover plate 1-2. The surface of the cover plate 1-2 is gold-plated, and the thickness of the cover plate 1-2 is 0.4 mm to achieve a low profile, i.e., a thin and light device. The detachable connection between the cavity 1-1 and the cover plate 1-2 can be that the cavity 1-1 and the cover plate 1-2 are connected by screws or the cavity 1-1 and the cover plate 1-2 are clamped.

[0058] When implementing Example 18, step 1: design and manufacture of tube shell 1; the cavity 1-1 of the tube shell 1 is formed by fine processing from a whole piece of 4J29 alloy, the surface of the cavity 1-1 is gold-plated, the tail pipe is integrated with the cavity 1-1 by AuSn eutectic welding, the insulator of the hair button is fixed on the cavity by a sintering process, the cover plate 1-2 is processed by an etching process to ensure the dimensional accuracy and flatness of the cover plate 1-2, and the surface of the cover plate 1-2 is gold-plated.

[0059] Step 2: Design of the light receiving unit. Light enters the device through the FC / APC connector 3-8 and the beveled optical fiber 3-4. The bevel of the optical fiber is designed to be 42° to ensure that the light can vertically enter the detector chip 3-5. The detector chip 3-5 is bonded to the ceramic substrate 3-6 by conductive silver paste. A thin film circuit with capacitance and resistance is designed on the ceramic substrate 3-6. The driving circuit board 4 provides voltage to the detector chip 3-5 through the conical inductor 3-7 and the thin film circuit. The detector chip 3-5 converts the incident light into a microwave signal and transmits it to the RF microwave circuit 2 through the ceramic substrate 3-6. The RF microwave circuit 2 uses a microstrip transmission line with an Al2O3 substrate as a carrier to transmit microwave signals. The line width, thickness and impedance matching of the transmission line are calculated and simulated using HFSS software. At the same time, a digitally controlled attenuator 2-3 and a low-noise amplifier 2-5 are connected in series between the microstrip lines. After the microwave signal reaches the branch port of the RF single-pole double-throw switch 2-7 along the microstrip line, it is output from the common port of the RF single-pole double-throw switch 2-7 under the control of the driving circuit, and then transmitted to the RF button 1-3 through the 5880 microstrip line 2-8. Finally, the RF button 1-3 outputs the microwave signal to the outside of the device.

[0060] Step 3: Design of optical transmitting unit. The RF microwave signal is transmitted from the outside to the inside of the device through the RF button 1-3, and then transmitted to the common port of the RF single-pole double-throw switch 2-7 through the 5880 microstrip line 2-8. Under the control of the driving circuit, it is output from the other branch port of the RF single-pole double-throw switch 2-7 to the microwave circuit on the right side of the switch. The microwave circuit of this part is mainly composed of 50Ω ceramic microstrip 2-2, low noise amplifier 2-5, digital attenuator 2-3 and CWP ceramic substrate 2-1. HFSS software is used to perform electromagnetic simulation of the microwave circuit to ensure the impedance matching of each part of the circuit. At the same time, capacitor 2-6 is connected in series in the circuit. The microwave signal is transmitted along the circuit to the modulator chip 3-3. The modulator chip 3-3 modulates the microwave signal in the optical carrier. The modulated optical signal is introduced into the FA optical fiber array 3-2 after coupling, and output to the outside of the device through the FA optical fiber array and the FC / APC connector 3-8 plug.

[0061] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principle of the present invention should be included in the protection scope of the present invention.

Claims

1. A packaging structure of a microwave photon transceiver integrated device, comprising a tube shell (1), characterized in that: The tube shell (1) comprises a cavity (1-1), a driving circuit board (4) is arranged in the cavity (1-1), a light receiving unit, a light emitting unit and a radio frequency microwave circuit (2) are respectively connected to the driving circuit board (4), the light receiving unit and the light emitting unit are connected via the radio frequency microwave circuit (2), and a fur button is connected to the bottom of the cavity (1-1), and the fur button is connected to the radio frequency microwave circuit (2).

2. The packaging structure of the microwave photon transceiver integrated device according to claim 1, characterized in that: An operational amplifier chip (4-1) is provided on the driving circuit board (4).

3. The packaging structure of the microwave photon transceiver integrated device according to claim 2, characterized in that: The light receiving unit comprises a detector chip (3-5), wherein the detector chip (3-5) is fixed on a ceramic substrate (3-6), and the ceramic substrate (3-6) is fixed in the cavity (1-1).

4. The packaging structure of the microwave photon transceiver integrated device according to claim 3, characterized in that: A thin film circuit having a capacitor and a resistor is provided on the ceramic substrate (3-6); a power supply end of the detector chip (3-5) is connected to a conical inductor (3-7); the drive circuit board (4) and the detector chip (3-5) are connected via the conical inductor (3-7) and the thin film circuit; and the detector chip (3-5) is connected to the radio frequency microwave circuit (2) via the ceramic substrate (3-6).

5. The packaging structure of the microwave photon transceiver integrated device according to claim 4, characterized in that: An inclined optical fiber (3-4) for connecting to an FC / APC connector (3-8) is provided in the cavity (1-1), and the inclined optical fiber (3-4) is connected to the detector chip (3-5).

6. The packaging structure of the microwave photon transceiver integrated device according to claim 5, characterized in that: The optical transmission unit comprises a modulator chip (3-3), the modulator chip (3-3) is connected to an FA optical fiber array (3-2), a coupling optical fiber (3-1) for connecting to an FC / APC connector (3-8) is arranged in the cavity (1-1), the FA optical fiber array (3-2) is connected to the coupling optical fiber (3-1), and the modulator chip (3-3) is connected to the radio frequency microwave circuit (2).

7. The packaging structure of the microwave photon transceiver integrated device according to claim 6, characterized in that: The modulator chip (3-3) is fixed on a CWP ceramic substrate (2-1), and the CWP ceramic substrate (2-1) is fixed in the cavity (1-1).

8. The packaging structure of the microwave photon transceiver integrated device according to any one of claims 1 to 7, characterized in that: The radio frequency microwave circuit (2) is connected in series with a capacitor (2-6).

9. The packaging structure of the microwave photon transceiver integrated device according to claim 8, characterized in that: The radio frequency microwave circuit (2) comprises a digitally controlled attenuator (2-3), a low noise amplifier (2-5) and a radio frequency single-pole double-throw switch (2-7); the digitally controlled attenuator (2-3) is arranged between the modulator chip (3-3) and the low noise amplifier (2-5); one end of the radio frequency single-pole double-throw switch (2-7) is connected to the ceramic substrate (3-6) and the other end is connected to the low noise amplifier (2-5).

10. The packaging structure of the microwave photon transceiver integrated device according to claim 9, characterized in that: The modulator chip (3-3) is connected to the digitally controlled attenuator (2-3) via a 50Ω ceramic microstrip (2-2).

11. The packaging structure of the microwave photon transceiver integrated device according to claim 10, characterized in that: The radio frequency single-pole double-throw switch (2-7) is connected to the hair button via a 5880 microstrip line (2-8).

12. The packaging structure of the microwave photon transceiver integrated device according to claim 11, characterized in that: The digitally controlled attenuator (2-3) is fixed on a tungsten-copper gasket (2-4), and the tungsten-copper gasket (2-4) is fixed in the cavity (1-1).

13. The packaging structure of the microwave photon transceiver integrated device according to claim 12, characterized in that: The fixed part of the wool button is fixed inside the cavity (1-1) through a glass sintering process, the wool button is electrically connected to a 5880 microstrip line (2-8) inside the cavity (1-1) through a bonding gold wire or a gold ribbon, and the floating part of the wool button is embedded outside the cavity (1-1).

14. The packaging structure of the microwave photon transceiver integrated device according to claim 13, characterized in that: The fixing part of the wool button comprises a central conductor and an insulator, the insulator is fixed in the cavity (1-1), and the central conductor is arranged on the insulator.

15. The packaging structure of the microwave photon transceiver integrated device according to claim 14, characterized in that: The insulator is made of glass having the same expansion coefficient as the 4J29 alloy.

16. The packaging structure of the microwave photon transceiver integrated device according to any one of claims 9 to 15, characterized in that: The fur buttons comprise a radio frequency fur button (1-3) and a low frequency fur button (1-4); the radio frequency fur button (1-3) and the low frequency fur button (1-4) are respectively arranged at the bottom of the cavity (1-1); and the radio frequency fur button (1-3) and the low frequency fur button (1-4) are respectively connected to a 5880 microstrip line (2-8).

17. The packaging structure of the microwave photon transceiver integrated device according to claim 16, characterized in that: The cavity (1-1) is integrally formed from 4J29 alloy.

18. The packaging structure of the microwave photon transceiver integrated device according to claim 17, characterized in that: The cavity (1-1) is detachably connected to a cover plate (1-2).

Images