Temperature variable attenuator and electronic device

Abstract

According to the temperature variable attenuator and the electronic equipment, the temperature variable attenuator is mainly composed of two resistors, compared with a device composed of three or more resistors, the working frequency range is wider, the size is smaller, and miniaturization of products is better facilitated; in addition, the first resistor can be accurately measured and debugged through the two signal electrodes, and the second resistor can be accurately measured and debugged through the signal electrodes and the ground electrode, so that the precision of the temperature variable attenuator can be improved.

Description

Technical Field

[0001] The present application belongs to the field of temperature compensation, and in particular, relates to a temperature variable attenuator and electronic equipment. Background Art

[0002] At present, during the operation of active devices such as high frequency and microwave, temperature drift often occurs as the working time increases or the ambient temperature changes, which seriously affects the characteristic indicators of the device and even the stability of the entire system.

[0003] In order to reduce the drift of temperature characteristics of high-frequency and microwave active devices. In some schemes, for example, high-frequency and microwave power amplifiers are used, but their gain changes with the ambient temperature, and the output power also changes accordingly, which seriously affects the characteristic indicators and stability of the device and even the entire system. In some schemes, integrated temperature compensation attenuators are also used to overcome these problems to a certain extent. However, the existing temperature compensation attenuators generally use three microstrip line resistors to form a so-called T-type or π-type structure. These three microstrip line resistors form a loop structure, which makes it difficult to accurately measure and debug the resistance value of a single resistor, which will lead to insufficient accuracy of the attenuation. In addition, the structure using three microstrip line resistors is large in size and is not conducive to the miniaturization of the product. Summary of the invention

[0004] The purpose of the present application is to provide a temperature variable attenuator and an electronic device, aiming to solve the problems of insufficient accuracy and large size of traditional temperature compensation attenuators.

[0005] In order to achieve the above-mentioned object, in a first aspect, an embodiment of the present application provides a temperature variable attenuator, including a substrate, a resistor component, two signal electrodes and a ground electrode; the resistor component only includes a first resistor and a second resistor; The first resistor, the second resistor, the two signal electrodes and the ground electrode are fixed on the first surface of the substrate, the first resistor is connected between the two signal electrodes, the second resistor is connected between one of the signal electrodes and the ground electrode, the second resistor is not directly connected to the other signal electrode, and no other resistors except the first resistor and the second resistor exist between any of the signal electrodes and the ground electrode, and at least one of the first resistor and the second resistor is a thermistor.

[0006] In another possible implementation manner of the first aspect, the ground electrode includes: The first part is arranged on the first surface of the substrate and connected to the second resistor.

[0007] In another possible implementation manner of the first aspect, the ground electrode further includes: a second portion, the second portion extending from the first portion and formed on a first side surface of the base body adjacent to the first portion; The third portion is extended from the second portion and formed on a second surface of the base body opposite to the first surface.

[0008] In another possible implementation of the first aspect, The first resistor is a thermistor, and the second resistor is a thermistor; or The first resistor is a thermistor, and the second resistor is a fixed resistor; or The first resistor is a fixed resistor, and the second resistor is a thermistor.

[0009] In another possible implementation manner of the first aspect, one of the first resistor and the second resistor is a thermistor with a positive temperature coefficient, and the other is a thermistor with a negative temperature coefficient.

[0010] In another possible implementation manner of the first aspect, a protective layer is further included, and the protective layer covers the first resistor and the second resistor.

[0011] In another possible implementation of the first aspect, the substrate includes a ceramic substrate.

[0012] In another possible implementation manner of the first aspect, the geometric shape of the first resistor is a polygon or a multi-angle.

[0013] In another possible implementation of the first aspect, the signal electrode is an electrode made of gold or silver-palladium, the ground electrode is an electrode made of gold and / or silver-palladium, and the first resistor and the second resistor are film resistors.

[0014] In a second aspect, an embodiment of the present application provides an electronic device, comprising the temperature variable attenuator.

[0015] The beneficial effects of the embodiments of the present application compared with the prior art are as follows: the above-mentioned temperature variable attenuator is mainly composed of two resistors, and compared with devices composed of more than three resistors, it has a wider operating frequency range and a smaller size, which is more conducive to the miniaturization of the product; in addition, the first resistor can be accurately measured and adjusted through the two signal electrodes, and the second resistor can be accurately measured and adjusted through the signal electrode and the ground electrode, so that the accuracy of the temperature variable attenuator can be improved. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0017] Figure 1 A schematic diagram of the structure of a temperature variable attenuator provided in one embodiment of the present application; Figure 2 For an embodiment of the present application Figure 1 AA section view; Figure 3 For an embodiment of the present application Figure 1 AA section view; Figure 4 For an embodiment of the present application Figure 1 AA section view; Figure 5 A schematic diagram of the structure of a temperature variable attenuator provided in one embodiment of the present application; Figure 6 A schematic diagram of an equivalent circuit of a temperature variable attenuator provided in one embodiment of the present application; Figure 7 A schematic diagram of an equivalent circuit of a temperature variable attenuator provided in one embodiment of the present application; Figure 8 A schematic diagram of an equivalent circuit of a temperature variable attenuator provided in one embodiment of the present application; Fig. 9 A schematic diagram of an equivalent circuit of a temperature variable attenuator provided in one embodiment of the present application; Fig.10 A schematic diagram of an equivalent circuit of a temperature variable attenuator provided in one embodiment of the present application; Fig.11 A schematic diagram of an equivalent circuit of a temperature variable attenuator provided in one embodiment of the present application; Fig.12 A schematic diagram of an equivalent circuit of a temperature variable attenuator provided in one embodiment of the present application; Fig.13 A schematic diagram of an equivalent circuit of a temperature variable attenuator provided in one embodiment of the present application; Fig.14 A schematic diagram of an equivalent circuit of a temperature variable attenuator provided in one embodiment of the present application; Fig.15 A schematic diagram of an equivalent circuit of a temperature variable attenuator provided in one embodiment of the present application; Fig.16 A schematic diagram of an equivalent circuit of a temperature variable attenuator provided in one embodiment of the present application; Fig.17 A schematic diagram of an equivalent circuit of a temperature variable attenuator provided in one embodiment of the present application; Fig.18 A curve showing the relationship between the attenuation and temperature change of the temperature variable attenuator at different operating frequencies provided in any embodiment of the present application. DETAILED DESCRIPTION

[0018] In order to make the technical problems, technical solutions and beneficial effects to be solved by the present application more clearly understood, the present application is further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present application and are not used to limit the present application.

[0019] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Therefore, a feature defined as "first" or "second" may explicitly or implicitly include one or more of the features. In the description of this application, "multiple" means two or more, unless otherwise clearly and specifically defined.

[0020] In high-frequency microwave circuits and systems, especially in mobile communication systems, navigation systems, radar systems and other fields that have strict requirements on temperature characteristics, temperature compensation attenuators are often used to compensate for temperature drift caused by temperature changes. However, traditional temperature compensation attenuators generally use multiple electronic devices (such as resistors) to form hardware circuits such as T-type structures and π-type structures to compensate for the temperature of the entire system, but this solution uses more electronic devices, is large in size and has high costs. Secondly, it is also impossible to measure and debug the resistance of a single electronic device, making it difficult to achieve high-precision adjustment or calibration of the attenuation. In addition, the operating frequency range of traditional temperature compensation attenuators is 18GHz (Hertz) ~ 36GHz, which cannot meet current needs.

[0021] To this end, the present application provides a temperature variable attenuator, which, in addition to the necessary electrodes, substrate and encapsulation structure, only includes two resistor elements as a circuit device. It is small in size and can achieve high-precision adjustment or calibration of attenuation, and can operate in an operating frequency range of 1GHz to 40GHz.

[0022] The temperature variable attenuator provided in the present application is described below by way of example in conjunction with the accompanying drawings.

[0023] Figure 1 This is a schematic diagram of the first structure of the temperature variable attenuator provided in the embodiment of the present application. Figure 1As shown, exemplarily, a temperature variable attenuator includes a substrate 11, a resistor assembly, two signal electrodes 12, 13 and a ground electrode 14. The resistor assembly only includes a first resistor R12 and a second resistor R23.

[0024] The first resistor R12, the second resistor R23, the two signal electrodes 12, 13 and the ground electrode 14 are fixed on the first surface of the substrate 11, the first resistor R12 is connected between the two signal electrodes 12, 13, the second resistor R23 is connected between one of the signal electrodes (for example, the signal electrode 12) and the ground electrode 14, the second resistor R23 is not directly connected to the other signal electrode (for example, the signal electrode 13), there are no other resistors except the first resistor R12 and the second resistor R23 between any signal electrode 12, 13 and the ground electrode 14, and at least one of the first resistor R12 and the second resistor R23 is a thermistor.

[0025] The substrate 11 is made of insulating material, such as a ceramic substrate. It is understandable that the substrate 11 also includes a second surface opposite to the first surface. For the corresponding product, the first surface of the substrate 11 is its top surface, and the second surface is its bottom surface, or vice versa.

[0026] The two signal electrodes 12 and 13 include a first signal electrode 12 and a second signal electrode 13. When the first signal electrode 12 is used as a signal input terminal, the second signal electrode 13 is used as a signal output terminal; when the first signal electrode 12 is used as a signal output terminal, the second signal electrode 13 is used as a signal input terminal. For ease of understanding, the first resistor R12 can also be called a series resistor, and the second resistor R23 can be called a parallel resistor.

[0027] Specifically, the two ends of the first resistor R12 are directly connected to the first signal electrode 12 and the second signal electrode 13, respectively, the first end of the second resistor R23 is directly connected to the first signal electrode 12 and the first resistor R12, and the second end of the second resistor R23 is directly connected to the ground electrode 14, which is equivalent to that the first resistor R12 and the second resistor R23 are arranged between the second signal electrode 13 and the ground electrode 14, while the second resistor R23 is not directly connected to the second signal electrode 13; or, the two ends of the first resistor R12 are directly connected to the first signal electrode 12 and the second signal electrode 13, respectively, the first end of the second resistor R23 is directly connected to the second signal electrode 13 and the first resistor R12, and the second end of the second resistor R23 is directly connected to the ground electrode 14, which is also equivalent to that the first resistor R12 and the second resistor R23 are arranged between the first signal electrode 12 and the ground electrode 14, while the second resistor R23 is not directly connected to the first signal electrode 12. That is, there is no other resistor between any signal electrode 12, 13 and the ground electrode 14 except the first resistor R12 and the second resistor R23.

[0028] In the embodiment of the present application, the above-mentioned temperature variable attenuator is mainly composed of a first resistor R12 and a second resistor R23. Compared with a device composed of more than three resistors, it has a smaller size and is more conducive to miniaturization of the product; in addition, the resistance value of the first resistor R12 can be accurately measured and adjusted through the first signal electrode 12 and the second signal electrode 13, and the resistance value of the second resistor R23 can be accurately measured and adjusted through the first signal electrode 12 or the second signal electrode 13 and the ground electrode 14. Compared with the T-type or π-type structure composed of three resistors, the overall parameters of the temperature variable attenuator can be accurately configured, thereby improving the accuracy of the temperature variable attenuator.

[0029] In some embodiments, the temperature variable attenuator is a film device. At least one of the first resistor R12 and the second resistor R23 is a film thermistor with a negative temperature coefficient (NTC) or a film thermistor with a positive temperature coefficient (PTC). This is conducive to the miniaturization of the temperature variable attenuator and improves the integration. The first resistor R12 and the second resistor R23 are usually a separate resistor element, and the first resistor R12 and the second resistor R23 are not provided with a third terminal other than the first end and the second end.

[0030] In some embodiments, the first signal electrode 12 and the second signal electrode 13 are electrodes made of gold or silver palladium, and the ground electrode 14 is an electrode made of gold and / or silver palladium. Such electrodes are beneficial in improving the microwave characteristics and solderability of the device, reducing the impedance of the device, and improving the performance of the temperature variable attenuator.

[0031] See also Figure 2 In some embodiments, the ground electrode 14 includes a first portion 141 disposed on the first surface of the substrate 11. In this way, when the temperature variable attenuator is disposed on a circuit board, each electrode can be welded on the first surface.

[0032] See also Figure 3 In some embodiments, the ground electrode 14 includes a first portion 141 and a second portion 142 .

[0033] The first portion 141 is disposed on the first surface of the substrate 11 and connected to the second resistor R23, and the second portion 142 is extended from the first portion 141 and formed on the first side surface of the substrate 11 adjacent to the first portion 141. That is, the ground electrode 14 is also coated on the side surface of the substrate 11, and when the temperature variable attenuator is disposed on a circuit board, it is beneficial to improve the grounding characteristics and reliability of the temperature variable attenuator.

[0034] See also Figure 4In some embodiments, the ground electrode 14 further includes a third portion 143, which is extended from the second portion 142 and formed on the second surface of the substrate 11. That is, the ground electrode 14 extends from the top surface to the bottom surface of the substrate, which not only facilitates the welding of the temperature variable attenuator on the circuit board, but also further improves the RF characteristics and reliability of the grounding of the temperature variable attenuator.

[0035] In some embodiments, at least one of the first signal electrode 12, the second signal electrode 13, and the ground electrode 14 will use a gold electrode on the first surface of the substrate 11, so as to facilitate connection with surrounding devices by gold wire bonding; and the part extending to the side and second surface of the substrate 11 can be fired into a silver-palladium electrode by silver-palladium paste. The exemplary process is to first fire the silver-palladium paste to form a silver-palladium electrode, and then fire the gold electrode. The advantages of making the electrode in this way are low production cost, easy production, high reliability of the electrode, and improved performance of the temperature variable attenuator.

[0036] See also Figure 5 In some embodiments, the temperature variable attenuator further includes a protective layer 15, which covers the first resistor R12 and the second resistor R23, so that the first signal electrode 12, the second signal electrode 13, and the ground electrode 14 are exposed. It is understandable that the protective layer 15 may cover part of the first signal electrode 12, the second signal electrode 13, and the ground electrode 14. The protective layer 15 is used to protect the first resistor R12 and the second resistor R23. The protective layer 15 is, for example, resin.

[0037] See also Figure 1 or Figure 5 In some embodiments, the geometric shape of the first resistor R12 is a polygon or a multi-angle, or even an arc, a circle, an ellipse, etc. For example, based on the design of device miniaturization, the first resistor R12 can be made as follows: Figure 1 or Figure 5 The bent polygonal shape (such as a snake shape) shown in the figure has better temperature change characteristics and radio frequency characteristics. The geometric shape of the second resistor R23 can be any shape, such as a polygon or a multi-angle, or even an arc, a circle, an ellipse, etc. Figure 1 , Figure 5 The second resistor R23 is exemplified as a quadrilateral.

[0038] In some embodiments, the first resistor R12 and the second resistor R23 are film resistors. The first resistor R12 is a thick film resistor or a thin film resistor, and the second resistor R23 is a thick film resistor or a thin film resistor. The so-called film resistor refers to a resistor or a thermistor made by a thick film process or a thin film process on the substrate 11. In some cases, when making the temperature variable attenuator of the present application, the cost of making a resistor or a thermistor by a thin film process is higher than the cost of making a resistor or a thermistor by a thick film process.

[0039] See also Figures 6 to 9 In some embodiments, the first resistor R12 is a thermistor, and the second resistor R23 is a thermistor. One of the first resistor R12 and the second resistor R23 is a thermistor with a positive temperature coefficient, and the other is a thermistor with a negative temperature coefficient.

[0040] For example, see Figure 6 , Figure 7 The first resistor R12 is a thermistor with a negative temperature coefficient, the second resistor R23 is a thermistor with a positive temperature coefficient, and the second resistor R23 is connected between the second signal electrode 13 and the ground electrode 14 (see Figure 6 ), or the second resistor R23 is connected between the first signal electrode 12 and the ground electrode 14 (see Figure 7 ).

[0041] For example, see Figure 8 , Fig. 9 The first resistor R12 is a thermistor with a positive temperature coefficient, the second resistor R23 is a thermistor with a negative temperature coefficient, and the second resistor R23 is connected between the second signal electrode 13 and the ground electrode 14 (see Figure 8 ), or the second resistor R23 is connected between the first signal electrode 12 and the ground electrode 14 (see Fig. 9 ).

[0042] See also Figures 10 to 13 In some embodiments, the first resistor R12 is a thermistor, and the second resistor R23 is a fixed resistor.

[0043] For example, see Fig.10 , Fig.11 The first resistor R12 is a thermistor with a positive temperature coefficient, and the second resistor R23 is connected between the second signal electrode 13 and the ground electrode 14 (see Fig.10 ), or the second resistor R23 is connected between the first signal electrode 12 and the ground electrode 14 (see Fig.11 ).

[0044] For example, see Fig.12 , Fig.13 The first resistor R12 is a thermistor with a negative temperature coefficient, and the second resistor R23 is connected between the second signal electrode 13 and the ground electrode 14 (see Fig.12 ), or the second resistor R23 is connected between the first signal electrode 12 and the ground electrode 14 (see Fig.13 ).

[0045] See also Figures 14 to 17 In some embodiments, the first resistor R12 is a fixed resistor, and the second resistor R23 is a thermistor.

[0046] For example, see Fig.14 , Fig.15 The second resistor R23 is a thermistor with a positive temperature coefficient. The second resistor R23 is connected between the second signal electrode 13 and the ground electrode 14 (see Fig.14 ), or the second resistor R23 is connected between the first signal electrode 12 and the ground electrode 14 (see Fig.15 ).

[0047] For example, see Fig.16 , Fig.17 The second resistor R23 is a thermistor with a negative temperature coefficient. The second resistor R23 is connected between the second signal electrode 13 and the ground electrode 14 (see Fig.14 ), or the second resistor R23 is connected between the first signal electrode 12 and the ground electrode 14 (see Fig.15 ).

[0048] The advantage of setting one of the resistors as a fixed resistor is that it is simpler to manufacture, has lower cost, and has slightly different temperature characteristics, compared to using both resistors as thermistors. However, it is more cost-effective for occasions where the temperature characteristics requirements are not too high.

[0049] The arrangement direction of the first signal electrode 12 and the second signal electrode 13 is the length direction, the arrangement direction of the first signal electrode 12 and the ground electrode 14 is the width direction, and the thickness is between the first surface and the second surface of the substrate 11. In some embodiments, the length of the substrate 11 or the temperature variable attenuator is 0.7 mm (millimeter) ~ 1 mm, and the typical value is 0.85 mm; the width of the substrate 11 or the temperature variable attenuator is 0.7 mm ~ 0.9 mm, and the typical value is 0.8 mm; the thickness of the substrate 11 or the temperature variable attenuator is 0.15 mm ~ 0.35 mm, and the typical value is 0.25 mm. It can be seen that compared with the traditional temperature variable attenuator, the size of the temperature variable attenuator provided in the embodiment of the present application is greatly reduced, which is conducive to miniaturization and matching of the RF circuit.

[0050] See also Fig.18 , from the relationship curve between the attenuation and temperature change of the temperature variable attenuator provided in any embodiment of the present application at different operating frequencies, it can be seen that the temperature variable attenuator has an operating frequency range of 1GHz~40GHz between -55°C and +125°C, which greatly increases the operating frequency range compared to the operating frequency of 18GHz~36GHz or 1GHz-20GHz, and the linearity of the temperature compensation attenuation characteristics in the full operating frequency range is good, and the product consistency is good. In some embodiments, the typical value of the operating frequency range of the temperature variable attenuator provided in any embodiment of the present application is 1GHz~40GHz.

[0051] Compared with the prior art technical solution of a temperature compensation attenuator composed of three resistors (such as patent CN221102377U), the technical solution of this application has the following improvements: 1. The product size becomes smaller: from 1.52mm*1.81mm*0.38mm to 0.8mm*0.85mm*0.25mm.

[0052] 2. The operating frequency range is greatly improved: the operating frequency range of the existing temperature compensation attenuator is 1 GHz to 20 GHz, and the operating frequency range of the technical solution of this application is 1 GHz to 40 GHz. Please refer to the Fig.18 And patent CN221102377U Figure 6 .

[0053] 3. The number of components used is reduced: from 3 resistor components to 2 resistor components.

[0054] 4. For the same attenuation, the design parameters of each resistance are different: for example, for a 3dB attenuator, the reference values ​​of the resistance of the two resistors required by the technical solution of this application are: R12=12.5 ohms, R23=135 ohms; while the technical solution of patent CN221102377U requires a π-type attenuator with three resistors, and the reference values ​​of the resistance of the three resistors at 3dB are: R1=17.6 ohms, R2=R3=292 ohms.

[0055] Some characteristics of the temperature variable attenuator provided in the embodiment of the present application are described as follows: For example, when the operating frequency is 30 GHz and the temperature changes from -55°C to +125°C, the attenuation change curve is the yellow curve, and the attenuation changes from -4dB to -3.2dB. Its attenuation decreases as the temperature increases (absolute value).

[0056] At room temperature (25°C), when a temperature variable attenuator with an attenuation of 2 dB is to be designed, the resistance of the first resistor R12 is approximately 9 ohms to 10 ohms, and the resistance of the second resistor R23 is approximately 252 ohms to 268 ohms.

[0057] At room temperature (25°C), when a temperature variable attenuator with an attenuation of 3 dB is designed, the resistance of the first resistor R12 is approximately 12 ohms to 13 ohms, and the resistance of the second resistor R23 is approximately 130 ohms to 140 ohms.

[0058] At room temperature (25°C), when a temperature variable attenuator with an attenuation of 4 dB is designed, the resistance of the first resistor R12 is approximately 21 ohms to 23 ohms, and the resistance of the second resistor R23 is approximately 115 ohms to 125 ohms.

[0059] On the other hand, the difference between the technical solution of the present application and the technical solution of the existing temperature compensation attenuator (such as patent CN1671041A) is that the main bodies of the two resistors in the technical solution of the present application are not attached together. When the main bodies of the two resistors of the temperature compensation attenuator of patent CN1671041A are attached together, the circuit principle is equivalent to a T-type or π-type structure circuit, while the circuit principle of the technical solution of the present application constitutes an L-type structure or an inverted L-type structure; the difference between the technical solution of the present application and the technical solution of the existing temperature compensation attenuator (such as patent CN101752637A) is that the circuit principle of the temperature compensation attenuator of patent CN1671041A is equivalent to a T-type or π-type structure circuit, and the second resistor R23 of the technical solution of the present application is directly connected to only one of the signal electrodes, and is not connected to the other signal electrode.

[0060] It can be seen from this that the temperature variable attenuator mainly composed of 2 resistors in the present application is not obtained by simply omitting one resistor on the basis of the 3-resistor temperature compensation attenuator. It requires the inventor to break away from the inertial thinking of the conventional or well-known technical architecture of the three-resistor T-type or π-type architecture, and to verify it with creative labor; and the temperature variable attenuator composed of 2 resistors is not only reduced by an order of magnitude in size compared to the 3-resistor temperature compensation attenuator, but also has an operating frequency range increased by more than 2%, with better performance and better practicality.

[0061] In a second aspect, an embodiment of the present application provides an electronic device, including a temperature variable attenuator.

[0062] The electronic device is provided with the above-mentioned temperature variable attenuator mainly composed of two resistors. Compared with the device composed of more than three resistors, it has a smaller size, lower cost, and is more conducive to product miniaturization; the temperature variable attenuator with higher precision and larger operating frequency range is conducive to electronic equipment to cope with various working scenarios.

[0063] The embodiments described above are only used to illustrate the technical solutions of the present application, rather than to limit them. Although the present application has been described in detail with reference to the aforementioned embodiments, a person skilled in the art should understand that the technical solutions described in the aforementioned embodiments may still be modified, or some of the technical features may be replaced by equivalents. Such modifications or replacements do not deviate the essence of the corresponding technical solutions from the spirit and scope of the technical solutions of the embodiments of the present application, and should all be included in the protection scope of the present application.

Claims

1. A temperature variable attenuator, characterized in that: It includes a substrate, a resistor assembly, two signal electrodes and a ground electrode; the resistor assembly only includes a first resistor and a second resistor; The first resistor, the second resistor, the two signal electrodes and the ground electrode are fixed on the first surface of the substrate, the first resistor is connected between the two signal electrodes, the second resistor is directly connected between one of the signal electrodes and the ground electrode, the second resistor is not directly connected to the other signal electrode, and no other resistors except the first resistor and the second resistor exist between any of the signal electrodes and the ground electrode, and at least one of the first resistor and the second resistor is a thermistor.

2. The temperature variable attenuator according to claim 1, characterized in that: The ground electrode comprises: The first part is arranged on the first surface of the substrate and connected to the second resistor.

3. The temperature variable attenuator according to claim 2, characterized in that: The ground electrode further comprises: a second portion, the second portion extending from the first portion and formed on a first side surface of the base body adjacent to the first portion; The third portion is extended from the second portion and formed on a second surface of the base body opposite to the first surface.

4. The temperature variable attenuator according to any one of claims 1 to 3, characterized in that: The first resistor is a thermistor, and the second resistor is a thermistor; or The first resistor is a thermistor, and the second resistor is a fixed resistor; or The first resistor is a fixed resistor, and the second resistor is a thermistor.

5. The temperature variable attenuator according to claim 4, characterized in that: One of the first resistor and the second resistor is a thermistor with a positive temperature coefficient, and the other is a thermistor with a negative temperature coefficient.

6. The temperature variable attenuator according to any one of claims 1 to 3, characterized in that: The invention also includes a protection layer, wherein the protection layer covers the first resistor and the second resistor.

7. The temperature variable attenuator according to any one of claims 1 to 3, characterized in that: The substrate includes a ceramic substrate.

8. The temperature variable attenuator according to any one of claims 1 to 3, characterized in that: The geometric shape of the first resistor is a polygon or a multi-angle.

9. The temperature variable attenuator according to any one of claims 1 to 3, characterized in that: The signal electrode is an electrode made of gold or silver-palladium material, the ground electrode is an electrode made of gold and / or silver-palladium material, and the first resistor and the second resistor are film resistors.

10. An electronic device, characterized in that: Comprising a temperature variable attenuator as described in any one of claims 1-9.

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