Substrate processing apparatus and method of manufacturing same

Abstract

A substrate processing apparatus is provided. The substrate processing apparatus of the present invention comprises: a support unit provided in a processing space for processing and supporting a substrate, in which the support unit comprises: a positioning plate having a first thermal conductivity and having a groove formed thereon; and a block body disposed in the groove, and having a second thermal conductivity different from the first thermal conductivity.

Description

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] This application claims the benefit of Korean Patent Application No. 10-2023-0126769 filed on September 22, 2023, in the Korean Intellectual Property Office, the disclosure of which is incorporated herein by reference in its entirety. Technical Field

[0003] The present invention relates to a substrate processing apparatus and a method of manufacturing the substrate processing apparatus. Background Art

[0004] The process of manufacturing a semiconductor includes: a deposition process for forming a film on a semiconductor wafer (hereinafter referred to as a substrate); a chemical / mechanical polishing process for flattening the film; a photolithography process for forming a photoresist pattern on the film; an etching process for forming the film into a pattern having electrical characteristics using the photoresist pattern; an ion implantation process for implanting specific ions into a predetermined area of ​​the substrate; a cleaning process for removing impurities on the substrate; and an inspection process for inspecting the surface of the substrate on which the film or pattern is formed.

[0005] The etching process is a process for removing an exposed area of ​​a photoresist pattern formed on a substrate by a photolithography process. Types of etching processes may be classified into dry etching and wet etching.

[0006] The dry etching process forms an electric field by applying high frequency power to the upper electrode and the lower electrode installed at a predetermined distance in the sealed internal space where the etching process is performed, and applies an electric field to the reaction gas supplied into the sealed space to activate the reaction gas to form a plasma state. And then the ions in the plasma etch the substrate located on the lower electrode.

[0007] At this time, it is necessary to uniformly form plasma on the entire upper surface of the substrate. A ring assembly is provided to uniformly form plasma on the entire upper surface of the substrate. The ring assembly is installed to surround the edge of a supporting unit that supports the substrate.

[0008] Furthermore, the temperature of the substrate may be non-uniform depending on the region, and if the temperature is non-uniform, a problem of poor substrate yield may occur. Summary of the invention

[0009] The technical problem to be solved by the present invention is to provide a substrate processing apparatus capable of improving the temperature uniformity of a supporting unit and a method of manufacturing the substrate processing apparatus.

[0010] The objects of the present invention are not limited to the above-mentioned objects, and other unmentioned objects will be clearly understood by those skilled in the art through the following description.

[0011] The technical objectives of the present invention are not limited to the above-mentioned technical objectives, and those skilled in the art will clearly understand other unmentioned technical objectives through the following description.

[0012] One aspect of the substrate processing equipment of the present invention for achieving the above-mentioned technical purpose includes a supporting unit, which is arranged in a processing space for processing a substrate and supports the substrate, wherein the supporting unit includes: a positioning plate, the positioning plate has a first thermal conductivity and has a groove formed on the positioning plate; and a block, the block is arranged in the groove and has a second thermal conductivity different from the first thermal conductivity.

[0013] One aspect of a method for manufacturing a substrate processing device of the present invention for achieving the above-mentioned other purpose includes: in a method for manufacturing a substrate processing device for performing a plasma etching process, a support chuck is provided, wherein the support chuck is arranged in a processing space for processing a substrate and is used to support the substrate, wherein providing the support chuck includes: preparing a positioning plate having a first thermal conductivity; machining a groove on the positioning plate; and providing powder to the groove, wherein the powder has an aluminum oxide component ratio having a second thermal conductivity higher than the first thermal conductivity.

[0014] Another aspect of the substrate processing equipment of the present invention for achieving the above technical objectives includes: a chamber, in which a processing space for processing a substrate is formed; a gas supply unit, which is used to supply a process gas to the processing space; a shower head, which is arranged above the processing space and is used to spray the process gas supplied from the gas supply unit into the processing space; a support unit, which is arranged in the processing space and is used to support the substrate; a first heat transfer medium supply unit, which is used to supply a heat transfer medium to the support unit at a first fluid pressure; and a second heat transfer medium supply unit, which is used to supply the heat transfer medium to the support unit at a second fluid pressure different from the first fluid pressure, wherein the support unit includes: a first a circulation channel, wherein the first circulation channel includes a first heat transfer medium channel and a second heat transfer medium channel, the first heat transfer medium channel penetrates the support unit to supply the heat transfer medium to the substrate, and the first heat transfer medium channel is connected to the first heat transfer medium supply unit, and the second heat transfer medium channel is connected to the second heat transfer medium supply unit; a support chuck, wherein the support chuck includes a positioning plate and a block, the positioning plate has a first aluminum oxide component ratio, a first thermal conductivity, and a groove formed in the positioning plate, the block is arranged in the groove, has a second aluminum oxide component ratio different from the first aluminum oxide component ratio, and a second thermal conductivity higher than the first thermal conductivity; and a body, the body is arranged below the positioning plate, the body is made of aluminum and has a second circulation channel, and the temperature-controlled fluid moves through the second circulation channel.

[0015] Specific details of other embodiments are included in the detailed description and accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] These aspects and / or other aspects will become apparent and more readily understood through the following description of embodiments in conjunction with the accompanying drawings, in which:

[0017] Figure 1 is a diagram illustrating a substrate processing apparatus according to a first embodiment of the present invention;

[0018] Figure 2 It is a graphic Figure 1 A graph of region A;

[0019] Figure 3 is a diagram illustrating a supporting unit of a substrate processing apparatus according to a second embodiment of the present invention;

[0020] Figure 4 is a flow chart illustrating a method of manufacturing a substrate processing apparatus according to some embodiments of the present invention;

[0021] Figure 5 is a diagram illustrating a state in which a positioning plate is set in a substrate processing apparatus according to some embodiments of the present invention;

[0022] Figure 6 is a diagram illustrating a state in which a groove is machined in a puck of a substrate processing apparatus according to some embodiments of the present invention;

[0023] Figure 7 is a diagram illustrating a state in which a block is formed on a puck of a substrate processing apparatus according to some embodiments of the present invention; and

[0024] Figure 8 is a diagram illustrating a state in which a first circulation channel is formed in a supporting chuck of a substrate processing apparatus according to some embodiments of the present invention. DETAILED DESCRIPTION

[0025] Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. Figure 1 The advantages and features of the present invention and the methods for achieving them will become clear from the detailed description of the embodiments. However, the present invention is not limited to the embodiments disclosed below and may be implemented in various different forms. These embodiments are intended only to ensure that the disclosure of the present invention is complete, and are provided to fully inform those skilled in the art of the scope of the present invention, and the present invention is limited only by the scope of the claims. Throughout the specification, similar reference numerals indicate similar elements.

[0026] The terms used herein are used to describe embodiments and are not intended to limit the present invention. As used herein, unless otherwise specifically stated in the context, singular forms also include plural forms. As used herein, "include" and / or "comprise" do not exclude the addition or presence of one or more other parts, steps, operations and / or elements.

[0027] Figure 1 is a diagram illustrating a substrate processing apparatus according to a first embodiment of the present invention.

[0028] refer to Figure 1 The substrate processing apparatus 10 according to an embodiment of the present invention may include a chamber 100, a support unit 200, a gas supply unit 300, and a shower head 400. The substrate processing apparatus 10 may process a substrate W using plasma. For example, the substrate processing apparatus 10 may perform an etching process on the substrate W.

[0029] The chamber 100 may provide a processing space 101 in the chamber 100 in which a substrate processing process is performed. For example, the chamber 100 may have a cylindrical shape. The chamber 100 may be configured in a shape in which the processing space 101 is sealed. The chamber 100 may be made of a metal material such as aluminum and may be grounded.

[0030] An exhaust hole 102 may be formed on the bottom surface of the chamber 100. The exhaust hole 102 may be connected to an exhaust line 151. Reaction byproducts generated during the process and gas remaining in the inner space of the chamber 100 may be exhausted to the outside through the exhaust hole 102 and the exhaust line 151. Through the exhaust process, the inside of the chamber 100 may be reduced to a predetermined pressure, and, for example, a vacuum atmosphere may be formed.

[0031] The support unit 200 may be located inside the chamber 100. The support unit 200 may support the substrate W. The support unit 200 may be configured as an electrostatic chuck that uses an electrostatic force to adsorb the substrate W. Alternatively, the support unit 200 may support the substrate W in various ways such as mechanical clamping. Hereinafter, an example in which the support unit 200 is configured as an electrostatic chuck will be described.

[0032] For example, the supporting unit 200 may include a body 220 , a supporting chuck 230 , and a ring assembly 290 .

[0033] The main body 220 may have a support chuck 230 located at the top. The main body 220 may be made of a metal material such as aluminum. A step may be formed on the upper surface of the main body 220 so that the central area is positioned higher than the edge area. The upper central area of ​​the main body 220 may have the same area as the bottom surface of the support chuck 230. And the main body 220 may be bonded to the bottom surface of the support chuck 230 by the bonding unit 240. The bonding unit 240 may be provided as an adhesive layer made of silicone, but the present invention is not limited thereto.

[0034] The body 220 may be electrically connected to a separate power source (not shown). The power source connected to the body 220 may be configured as a high-frequency power source that generates high-frequency power such as RF (high voltage alternating current power). The body 220 receiving high-frequency power from the power source may function as an electrode.

[0035] In addition, the first circulation channel 221 , the first supply channel 221 a , and the second circulation channel 222 may be formed inside the body 220 .

[0036] The first circulation channel 221 may be used as a channel through which a heat transfer medium circulates. For example, the first circulation channel 221 may be arranged so that annular channels with different radii have the same center, and each first circulation channel 221 is separated from each other so that a separate heat transfer medium can travel through. Figure 2 Explain this.

[0037] The first circulation channel 221 may be connected to a heat transfer medium storage unit (not shown in the figure) via a heat transfer medium supply line (not shown in the figure). The heat transfer medium may be stored in the heat transfer medium storage unit. The heat transfer medium may be an inert gas, such as helium. Helium may be supplied to the first circulation channel 221 via a heat transfer medium supply line. The helium traveling through the first circulation channel 221 may be used as a medium for transferring heat of the substrate W. That is, the substrate W may be cooled by the helium.

[0038] A plurality of first supply channels 221a may be provided, and the first supply channels 221a may extend upward from the first circulation channel 221. For example, the first supply channels 221a may supply the heat transfer medium to the bottom surface of the substrate W by penetrating the body 220 and the support chuck 230. In addition, the first supply channels 221a and the first circulation channel 221 may be provided as channels for recovering the heat transfer medium after etching of the substrate W is completed.

[0039] That is, after the helium is supplied to the bottom surface of the substrate W through the first circulation channel 221 and the first supply channel 221a, the helium may be recovered to the heat transfer medium storage unit through the first supply channel 221a and the first circulation channel 221a again, but the present invention is not limited thereto.

[0040] The second circulation channel 222 can be used as a cooling fluid (e.g., coolant) as a channel through which the temperature-controlled fluid circulation circulates. The second circulation channel 222 can be formed in a spiral shape inside the body 220. Alternatively, the second circulation channel 222 can be arranged so that the annular channels with different radii have the same center. Each second circulation channel 222 can be connected to each other. The second circulation channel 222 can have a larger cross-sectional area than the first circulation channel 221. A plurality of second circulation channels 222 can be formed at the same height. The second circulation channel 222 can be located below the first circulation channel 221.

[0041] The second circulation channel 222 can be connected to a cooling fluid storage unit (not shown) through a cooling fluid supply line (not shown). The cooling fluid can be stored in the cooling fluid storage unit. A cooler (not shown) can be provided in the cooling fluid storage unit. The cooler can cool the cooling fluid to a predetermined temperature. Alternatively, the cooler can be installed on the cooling fluid supply line. The cooling fluid supplied to the second circulation channel 222 through the cooling fluid supply line can circulate along the second circulation channel 222 and cool the main body 220. As the main body 220 cools, the support chuck 230 and the substrate W can be cooled together to maintain the substrate W at a predetermined temperature.

[0042] The support chuck 230 may be located at the top of the main body 220. The support chuck 230 may be configured as a disc-shaped dielectric substance. The substrate W may be placed on the upper surface of the support chuck 230. The upper surface of the support chuck 230 may have a radius smaller than the radius of the substrate W, but the present invention is not limited thereto. The edge area of ​​the substrate W may be located outside the support chuck 230, but the present invention is not limited thereto. That is, the edge area of ​​the substrate W may be located in the ring assembly 290, but various modifications are feasible. Although not shown in the drawings, the support chuck 230 may have a plurality of protrusions. Helium as a heat transfer medium discharged from the first circulation channel 221 may be supplied to the recesses between the protrusions.

[0043] In addition, the support chuck 230 may be provided with a first electrode 231 therein. The first electrode 231 may be electrically connected to a first power source 231a. The first power source 231a may include a power source. A switch 231b may be installed between the first electrode 231 and the first power source 231a. The first electrode 231 may be electrically connected to the first power source 231a by turning the switch 231b on / off. When the switch 231b is turned on, a current may be applied to the first electrode 231. Due to the current applied to the first electrode 231, an electrostatic force acts between the first electrode 231 and the substrate W, and the substrate W may be adsorbed to the support chuck 230 by the electrostatic force. However, the support chuck 230 is not limited to an electrostatic chuck, and various modifications are possible.

[0044] The ring assembly 290 can focus the plasma onto the substrate. Although not shown in the drawings, the ring assembly 290 can be provided by combining one or more rings. For example, the ring assembly 290 can be provided as an inner ring surrounding the support chuck 230 and an outer ring surrounding the inner ring.

[0045] In addition, the support unit 200 of this embodiment may have different thermal conductivities depending on the region of the substrate W, thereby improving the temperature uniformity. Figure 2 To explain this.

[0046] The gas supply unit 300 may supply the process gas into the chamber 100. The gas supply unit 300 may include a gas supplier 310, a gas supply line 320, and a gas storage unit 330.

[0047] The gas in the gas storage unit 330 may be supplied into the chamber 100 through the gas supply line 320 by the gas supplier 310. For example, the gas supplier 310 may be installed in a central portion of an upper surface of the chamber 100.

[0048] The shower head 400 may be spaced apart from the top surface of the chamber 100 by a certain distance toward the bottom to form a certain space at the top of the chamber 100. The shower head 400 may be provided in a plate shape having a constant thickness. The shower head 400 may be formed with a plurality of spray holes SH. The spray holes SH may spray the process gas into the processing space 101 by penetrating the shower head 400 in a vertical direction.

[0049] The shower head 400 may be made of a metal material, and the bottom surface of the shower head 400 may be anodized to prevent the plasma from generating arcs. The shower head 400 may be electrically connected to a separate power supply (not shown). The power supply for the shower head 400 may be set to a high-frequency power supply (e.g., a high-voltage alternating current). Alternatively, the shower head 400 may be electrically grounded. The shower head 400 may be electrically connected to a power supply, or may be grounded to act as an electrode. For example, the shower head 400 may be set to have a diameter that is the same or similar to the support unit 200.

[0050] Hereinafter, the support unit 200 will be described with reference to the accompanying drawings, and the above-mentioned overlapping description will be omitted.

[0051] Figure 2 It is a graphic Figure 1 Graph of area A.

[0052] refer to Figure 2 , the supporting unit 200 of the first embodiment may include a body 220, a supporting chuck 230, and a first circulation channel 221. And the supporting chuck 230 may include a puck 230a and a block 230b.

[0053] The positioning plate 230a may have a first thermal conductivity. For example, the first thermal conductivity may be formed of aluminum oxide (ALO) having a lower thermal conductivity than the second thermal conductivity. 2 O 3 ) component ratio. The positioning plate 230a may be formed with a groove 230ah (see Figure 7 ). The groove 230ah may be provided so that the block 230b does not protrude from the positioning plate 230a, and the positioning plate 230a and the block 230b are provided at the same level.

[0054] That is, the block 230b and the positioning plate 230a can be formed at the same horizontal plane. This can be achieved by arranging the block 230b inside the groove 230ah without protruding. However, the present invention is not limited to this. In addition, although not shown in the drawings, a protrusion (not shown) can be provided on the upper surface of the positioning plate 230a and / or the block 230b, the protrusion having the same material and component ratio as each of the positioning plate 230a and / or the block 230b, an outer dam can be formed corresponding to the edge of the substrate W, and an inner dam can be formed by being spaced apart from the outer dam. The outer dam allows a heat transfer medium such as helium to stay on the bottom surface of the substrate W.

[0055] The block 230b may be disposed in the groove 230ah and may have a second thermal conductivity different from the first thermal conductivity. For example, the second thermal conductivity may be formed by a composition ratio of aluminum oxide having a higher thermal conductivity than the first thermal conductivity.

[0056] The first circulation channel 221 may penetrate the support chuck 230 of the support unit 200 , and may include a first heat transfer medium channel 2211 and second heat transfer medium channels 2212 , 2213 , 2214 through which different fluid pressures travel or are discharged.

[0057] The pressure of the heat transfer medium may travel through the first heat transfer medium channel 2211 at the first fluid pressure or be discharged through the first heat transfer medium channel 2211. For example, the first fluid pressure may be supplied to a region of the substrate W with a relatively low temperature (e.g., a first substrate region WC which is a central region of the substrate W, see FIG. Figure 3 ). At this time, the first fluid pressure may be lower than the second fluid pressure.

[0058] The pressure of the heat transfer medium in the second heat transfer medium channels 2212, 2213, and 2214 is different from the first fluid pressure, and, for example, the heat transfer medium may pass through or be discharged at a second fluid pressure higher than the first fluid pressure. As an example, the second fluid pressure may be supplied to a region of the substrate W with a relatively high temperature (e.g., a second substrate region WM that is a middle region of the substrate W, and / or a third substrate region WE that is an edge region of the substrate W, see reference 1 to FIG. 1 ). Figure 3 ). At this time, the second fluid pressure higher than the first fluid pressure may have a higher thermal conductivity than the heat transfer medium of the first fluid pressure.

[0059] Thus, in this embodiment, the aluminum oxide composition ratios of the positioning plate 230a and the block 230b may be different, and the fluid pressure of the heat transfer medium supplied to the substrate W may be different. This is to ensure that the substrates are cooled with different thermal conductivities to achieve temperature uniformity of the substrate W.

[0060] Here, a first zone (not shown in the reference numerals) in which an outlet of the first heat transfer medium channel 2211 is formed and a second zone (not shown in the reference numerals) in which outlets of the second heat transfer medium channels 2212, 2213, and 2214 are formed may be formed. The first zone may correspond to a first substrate region WC having a first temperature, and the second zone may correspond to a second substrate region WM and / or a third substrate region WE having a second temperature.

[0061] In addition, the first heat transfer medium supply unit 221b1 can be communicated with the first heat transfer medium channel 2211, and the first heat transfer medium supply unit 221b1 can supply heat transfer medium with a first fluid pressure. The second heat transfer medium supply units 221b2, 221b3 and 221b4 can be communicated with the second heat transfer medium channels 2212, 2213 and 2214, and the second heat transfer medium supply units 221b2, 221b3 and 221b4 can supply heat transfer medium with a second fluid pressure. Here, the second heat transfer medium supply units 221b2, 221b3 and 221b4 and the second fluid pressure of the second heat transfer medium channels 2212, 2213 and 2214 can be set so that a higher fluid pressure is supplied toward the edge of the substrate W.

[0062] In addition, the first heat transfer medium supply unit 221b1 may include a first heat transfer medium supply line (reference numerals not shown) and a first heat transfer medium storage unit (reference numerals not shown). The second heat transfer medium supply units 221b2, 221b3, and 221b4 may include a second heat transfer medium supply line (reference numerals not shown) and a second heat transfer medium storage unit (reference numerals not shown).

[0063] That is, the first heat transfer medium supply unit 221b1 and the second heat transfer medium supply units 221b2, 221b3 and 221b4 are separated from each other, and the heat transfer medium can be supplied at different first fluid pressures and second fluid pressures. In addition, when a plurality of second heat transfer medium supply units 221b2, 221b3 and 221b4 are provided, these second heat transfer medium supply units can be separated from each other and configured to supply fluids of different pressures. For example, a first orifice (not shown) forming a first fluid pressure can be provided in the first heat transfer medium supply line, and a second orifice forming a second fluid pressure can be provided in the second heat transfer medium supply line.

[0064] In the following, reference will be made to Figure 3 Modified examples of this embodiment are described, and overlapping descriptions of the same configuration performing the same function will be omitted.

[0065] Figure 3 2 is a diagram illustrating a support unit of a substrate processing apparatus according to a second embodiment of the present invention. Figure 3 , will mainly explain the instructions and use Figure 1 and Figure 2 The difference in the content described.

[0066] refer to Figure 3 The supporting unit 200 of the second embodiment may include a body 220, a supporting chuck 230, and a first circulation channel 221 that are the same as or similar to those of the first embodiment. And the supporting chuck 230 may include a positioning plate 230a and a block 230b.

[0067] Meanwhile, the block 230b of the supporting unit 200 of the second embodiment may include a first block body 230b1 and a second block body 230b2. The first block body 230b1 may have a first thickness. The second block body 230b2 may have a second thickness greater than the first thickness.

[0068] Here, the substrate W may include: a first substrate region WC having a first temperature, a second substrate region WM having a second temperature higher than the first temperature, and a third substrate region WE having a third temperature higher than the second temperature. For example, the first substrate region WC may be a central region of the substrate W. The second substrate region WM may be a middle region of the substrate W. The third substrate region WE may be an edge region of the substrate W.

[0069] For example, the temperature of the substrate W increases from the center to the edge, and for temperature uniformity, the exposed surface of the positioning plate 230a may face the first substrate region WC, the first block body 230b1 may face the second substrate region WM, and the second block body 230b2 may face the third substrate region WE.

[0070] In addition, by combining the second embodiment and the first embodiment, this embodiment is the same as or similar to the first embodiment, and a first zone (not shown) in which an outlet of the first heat transfer medium channel 2211 is formed may correspond to a first substrate region WC, and a second zone in which an outlet of the second heat transfer medium channels 2212, 2213, 2214 is formed may correspond to a second substrate region WM having a second temperature and / or a third substrate region WE having a third temperature.

[0071] In addition, a plurality of first supply channels 221a1, 221a2, and 221a3 may be formed separately from each other so that the first supply channel 221a of the second embodiment is connected to the first heat transfer medium channel 2211, or is separately connected to the second heat transfer medium channels 2212, 2213, and 2214. This may be the same as or similar to the first supply channel 221a of the first embodiment.

[0072] Hereinafter, a method of manufacturing the supporting unit 200 of the substrate processing apparatus 10 will be described with reference to the accompanying drawings.

[0073] Figure 4 is a flow chart illustrating a method of manufacturing a substrate processing apparatus according to some embodiments of the present invention. Figure 5 is a diagram illustrating a state in which a puck of a substrate processing apparatus according to some embodiments of the present invention is provided; and Figure 6 1 is a diagram illustrating a state in which a groove is machined in a positioning plate of a substrate processing apparatus according to some embodiments of the present invention. Figure 7 is a diagram illustrating a state in which a block is formed on a puck of a substrate processing apparatus according to some embodiments of the present invention; and Figure 8 is a diagram illustrating a state in which a first circulation channel is formed in a supporting chuck of a substrate processing apparatus according to some embodiments of the present invention.

[0074] refer to Figures 4 to 8 , a method for manufacturing a substrate processing device 10 may include: providing a support chuck 230, which is disposed in a processing space 101 for processing a substrate and supports the substrate W; and forming a first circulation channel 221 passing through the support chuck 230 so that a heat transfer medium travels through the substrate W.

[0075] Here, the step of providing the support chuck 230 may include: preparing a positioning plate 230a having a first thermal conductivity (S110); machining a groove 230ah in the positioning plate 230a (S120); and providing a powder having an aluminum oxide component ratio having a second thermal conductivity higher than the first thermal conductivity to the groove 230ah (S130).

[0076] First, refer to Figure 4 and Figure 5 , a positioning plate 230a having a first thermal conductivity may be prepared. The first thermal conductivity may be provided by a first aluminum oxide composition ratio and has a lower thermal conductivity than the second thermal conductivity.

[0077] This facilitates the movement of heat by making the thermal conductivity of the positioning plate 230a lower than the second thermal conductivity of the block 230b. In other words, heat moves from the high side to the low side, so the heat moves from the substrate W to the block 230b, from the block 230b to the positioning plate 230a, and then to the second circulation channel 222 of the body 220.

[0078] Therefore, the block 230b is formed on the side where the temperature is relatively high, and heat moves from the block 230b to the positioning plate 230a, thereby promoting heat exchange in the area where the temperature is high. That is, if the thermal conductivity of the block 230b is lower than that of the positioning plate 230a, it is difficult for the heat of the block 230b to be transferred to the positioning plate 230a, making heat exchange in the block 230b difficult, which can be prevented by the above.

[0079] Next, refer to Figure 4 and Figure 6 , the groove 230ah may be machined into the positioning plate 230a. For example, the groove 230ah may be machined and formed by grinding the positioning plate 230a. The grinding process may be performed by providing a mask M having holes corresponding to the groove 230ah formed on the upper surface of the positioning plate 230a, and then blasting sand on the mask M, but the present invention is not limited thereto.

[0080] Next, refer to Figure 4 and Figure 7 , the recess 230ah may be provided with a powder P having an aluminum oxide composition ratio of a second thermal conductivity higher than a first thermal conductivity. After the powder P is provided, the block 230b may be formed by pressing the powder P in a method such as a pressing process.

[0081] Next, refer to Figure 8 After providing the support chuck 230 , a first circulation channel 221 and / or a first supply channel 221 a penetrating the support chuck 230 may be formed so that the heat transfer medium travels through the substrate W.

[0082] Reference again Figure 2 and Figure 3 , forming the first circulation channel 221 includes: forming a first heat transfer medium channel 2211 connected to a first heat transfer medium supply unit 221b1, the first heat transfer medium supply unit 221b1 supplies the heat transfer medium at a first fluid pressure. Simultaneously or subsequently, second heat transfer medium channels 2212, 2213, 2214 connected to second heat transfer medium supply units 221b2, 221b3, 221b4 may be formed, the second heat transfer medium supply units 221b2, 221b3, 221b4 supply the heat transfer medium at a second fluid pressure different from the first fluid pressure.

[0083] Although the embodiments of the present invention have been described with reference to the above content and the accompanying drawings, it will be appreciated by those skilled in the art that the present invention can be practiced in other specific forms without changing the technical spirit or essential features. Therefore, the embodiments described above should be understood to be illustrative in all aspects and not restrictive.

[0084] [reference numerals]

[0085] 10: Substrate processing equipment

[0086] 100: Chamber

[0087] 200: Support unit

[0088] 220: Main body

[0089] 230: Support chuck

[0090] 230a: Positioning plate

[0091] 230b: Block

[0092] 240: First coating

[0093] 250: bonding unit

[0094] 260: Second coating

[0095] 300: Gas supply unit

[0096] 400: Sprinkler head

Claims

1. An apparatus for processing a substrate, comprising: a supporting unit disposed in a processing space for processing a substrate and configured to support the substrate, Wherein, the support unit comprises: a positioning plate having a first thermal conductivity and having a groove formed thereon; and A block is disposed in the groove and has a second thermal conductivity different from the first thermal conductivity.

2. The device according to claim 1, wherein The second thermal conductivity has a higher thermal conductivity than the first thermal conductivity.

3. The device according to claim 2, wherein: The first thermal conductivity is formed by a composition ratio of aluminum oxide having a lower thermal conductivity than the second thermal conductivity.

4. The device according to claim 2, wherein: The block includes a first block body having a first thickness and a second block body having a second thickness greater than the first thickness.

5. The device according to claim 4, wherein: The substrate includes: a first substrate region having a first temperature, a second substrate region having a second temperature higher than the first temperature, and a third substrate region having a third temperature higher than the second temperature, wherein the exposed surface of the positioning plate faces the first substrate area, Wherein, the first block body faces the second substrate area, Wherein, the second block body faces the third substrate area.

6. The device according to claim 1, wherein: A first circulation channel penetrating the support unit is formed to supply a heat transfer medium to the substrate, Wherein, the first circulation channel comprises: a first heat transfer medium channel through which the pressure of the heat transfer medium travels at a first fluid pressure or is exhausted; and A second heat transfer medium channel through which the heat transfer medium travels at a second fluid pressure different from the first fluid pressure or is exhausted.

7. The device according to claim 6, wherein: The support unit comprises: a first zone in which an outlet of the first heat transfer medium channel is formed; and The second zone has an outlet of the second heat transfer medium channel formed in the second zone.

8. The device according to claim 6, further comprising: a first heat transfer medium supply unit, the first heat transfer medium supply unit being configured to communicate with the first heat transfer medium channel and supply the heat transfer medium at the first fluid pressure; and A second heat transfer medium supply unit is configured to communicate with the second heat transfer medium channel and supply the heat transfer medium at the second fluid pressure.

9. The apparatus according to claim 1, further comprising: a chamber in which the processing space is formed; and A main body is disposed below the positioning plate, the main body being made of aluminum and having a second circulation channel through which a temperature-controlled fluid moves.

10. The device according to claim 9, further comprising: a gas supply unit, the gas supply unit being used to supply process gas to the processing space; and A shower head is disposed above the processing space and is used to spray the process gas supplied from the gas supply unit into the processing space.

11. A method for manufacturing a substrate processing apparatus for performing a plasma etching process, comprising: providing a supporting chuck disposed in a processing space for processing a substrate and used to support the substrate, Wherein, providing the supporting chuck comprises: preparing a positioning plate having a first thermal conductivity; machining a groove in the positioning plate; and A powder having an aluminum oxide composition ratio having a second thermal conductivity higher than the first thermal conductivity is provided to the groove.

12. The method according to claim 11, wherein: Providing the support chuck includes: After providing the powder the powder is compressed.

13. The method of claim 11, machining the groove comprises: The positioning disk is polished.

14. The method according to claim 11, further comprising: After providing the support chuck, a first circulation channel is formed through the support chuck so that a heat transfer medium travels through the substrate.

15. The method according to claim 14, wherein: Forming the first circulation channel comprises: forming a first heat transfer medium channel connected to a first heat transfer medium supply unit that supplies the heat transfer medium at a first fluid pressure; and A second heat transfer medium channel connected to a second heat transfer medium supply unit is formed, the second heat transfer medium supply unit supplying the heat transfer medium at a second fluid pressure different from the first fluid pressure.

16. An apparatus for processing a substrate, comprising: a chamber in which a processing space for processing a substrate is formed; a gas supply unit, the gas supply unit being used to supply process gas to the processing space; a shower head disposed above the processing space and configured to spray the process gas supplied from the gas supply unit into the processing space; a supporting unit, the supporting unit being disposed in the processing space and used for supporting the substrate; a first heat transfer medium supply unit, the first heat transfer medium supply unit being used to supply a heat transfer medium to the support unit at a first fluid pressure; and a second heat transfer medium supply unit, the second heat transfer medium supply unit being configured to supply the heat transfer medium to the support unit at a second fluid pressure different from the first fluid pressure; Wherein, the support unit comprises: a first circulation channel, the first circulation channel comprising a first heat transfer medium channel and a second heat transfer medium channel, the first heat transfer medium channel penetrates the support unit to supply a heat transfer medium to the substrate, the first heat transfer medium channel is connected to the first heat transfer medium supply unit, and the second heat transfer medium channel is connected to the second heat transfer medium supply unit; a support chuck including a positioning plate having a first aluminum oxide composition ratio, a first thermal conductivity, and a groove formed in the positioning plate, and a block disposed in the groove and having a second aluminum oxide composition ratio different from the first aluminum oxide composition ratio and a second thermal conductivity higher than the first thermal conductivity; and A main body is disposed below the positioning plate, the main body is made of aluminum, and the main body has a second circulation channel through which a temperature-controlled fluid moves.

Images