Perovskite annealing hot plate and preparation method and application of perovskite thin film
By designing a perovskite annealed hot plate that can independently lift and lower the sub-hot plate, the warping problem of TCO glass substrate caused by traditional annealing methods is solved, the annealing uniformity and crystallization uniformity of the perovskite film are achieved, and the device efficiency is improved.
Patent Information
- Application Number
- CN202411901939.5
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-12-23
- Publication Date
- 2025-04-01
AI Technical Summary
During the preparation process of perovskite film, the traditional annealing method causes warping of the TCO glass substrate, resulting in uneven annealing and affecting the crystal quality.
A perovskite annealed hot plate is designed to achieve independent lifting of sub-hot plates, and accurately control the close contact between the hot plates and the TCO glass substrate to avoid warping and achieve annealing uniformity and crystallization uniformity.
It effectively improves the annealing uniformity and crystallization uniformity of perovskite films, solves the problem of uneven crystallization quality caused by uneven annealing of large areas of films, and improves device efficiency.
Smart Images
Figure CN119744106A_ABST
Abstract
Description
Technical Field
[0001] The invention belongs to the technical field of solar cells, and in particular relates to a preparation method and application of a perovskite annealing hot plate and a perovskite film. Background Art
[0002] The development of solar cells has gone through crystalline silicon perovskite solar cells, thin-film solar cells, perovskite and other new perovskite solar cells. With the continuous upgrading of energy demand, there is also an increasing demand for new photovoltaic technologies. Perovskite solar cells have excellent theoretical efficiency and low kilowatt-hour conversion cost. More and more researchers and companies are investing in the industrialization research of perovskites. With the continuous advancement of industrialization, there are more and more technical problems that need to be overcome.
[0003] For example, during the preparation process of perovskite film, it needs to go through the process of annealing and crystallization, but the current annealing method still faces many problems. In the traditional method of preparing perovskite film, hot plate annealing is used, and the perovskite is coated on a transparent conductive oxide glass substrate (TCO glass substrate). After hot plate annealing, the TCO glass substrate will warp due to thermal stress, resulting in the problem of uneven annealing of the perovskite film.
[0004] Therefore, how to accurately control the close contact between the perovskite annealing hot plate and the TCO glass substrate to avoid the warping problem of the TCO glass substrate and improve the annealing uniformity and crystallization uniformity of the perovskite film is a technical problem that needs to be solved urgently. Summary of the invention
[0005] In view of the deficiencies of the prior art, the purpose of the present invention is to provide a method for preparing and applying a perovskite annealing hot plate and a perovskite film. The present invention designs a perovskite annealing hot plate that can realize independent lifting of a sub-hot plate, and can accurately control the close contact between the perovskite annealing hot plate and the entire TCO glass substrate, thereby avoiding the warping problem of the TCO glass substrate and effectively improving the annealing uniformity and crystallization uniformity of the perovskite film. In particular, the perovskite annealing hot plate helps solve the problem of non-uniform perovskite crystallization quality caused by non-uniform annealing of large-area perovskite films (square meter level), improves device efficiency, and has very promising application prospects.
[0006] In order to achieve the purpose of the invention, the present invention adopts the following technical solutions:
[0007] In a first aspect, the present invention provides a perovskite annealing hot plate, wherein the perovskite annealing hot plate comprises a plurality of sub-hot plates distributed in an array.
[0008] Each of the sub-heat plates has an independent lifting function and is used to keep in contact with the TCO glass substrate.
[0009] The present invention designs a perovskite annealing hot plate that can realize independent lifting of the sub-hot plate, can accurately control the close contact between the perovskite annealing hot plate and the entire TCO glass substrate, avoids the warping problem of the TCO glass substrate, and effectively improves the annealing uniformity and crystallization uniformity of the perovskite film. In particular, the perovskite annealing hot plate helps solve the problem of non-uniform perovskite crystallization quality caused by non-uniform annealing of large-area perovskite films (square meter level), improves device efficiency, and has very promising application prospects.
[0010] It should be noted that the present invention does not limit the type of TCO glass substrate. For example, it may be an ITO (indium tin oxide) glass substrate or a FTO (fluorine-doped tin oxide) glass substrate.
[0011] Preferably, the areas of the plurality of sub-heat plates are the same.
[0012] Preferably, the perovskite annealing hot plate is divided into 6 mutually independent column units in sequence and at equal intervals in the first direction, and is divided into 5 mutually independent row units in sequence and at equal intervals in the second direction.
[0013] Preferably, each of the column units is distributed in a straight line along a first direction, and each of the row units is distributed in a straight line along a second direction, and the first direction and the second direction are perpendicular to each other.
[0014] Preferably, the plurality of sub-heat plates have the same operating temperature.
[0015] Preferably, the rising distance of the sub-heat plate is 0-5 mm and is not 0, for example, it can be 1 mm, 2 mm, 3 mm, 4 mm or 5 mm.
[0016] Preferably, the descending distance of the sub-heat plate is 0-2 cm, and is not 0, for example, it can be 0.5 mm, 1 mm, 1.5 mm or 2 mm.
[0017] Preferably, the rising rate of the sub-heat plate is 0-0.5 mm / s, and is not 0, for example, it can be 0.1 mm / s, 0.2 mm / s, 0.3 mm / s, 0.4 mm / s or 0.5 mm / s.
[0018] Preferably, the descending rate of the sub-heat plate is 0-1 mm / s, and is not 0, for example, it may be 0.2 mm / s, 0.5 mm / s, 0.7 mm / s or 1 mm / s.
[0019] In a second aspect, the present invention provides a method for preparing a perovskite film, the preparation method comprising the following steps:
[0020] The perovskite precursor solution is coated onto the surface of the TCO glass substrate to form a wet film.
[0021] The TCO glass substrate with the wet film is placed on the surface of the perovskite annealing hot plate as described in the first aspect for thermal annealing treatment; during the thermal annealing treatment, the sub-hot plate located below the edges of the TCO glass substrate is controlled to rise to keep the TCO glass substrate in close contact with the sub-hot plate.
[0022] After the thermal annealing treatment is completed, the perovskite film is obtained.
[0023] The preparation method provided by the present invention uses an array-type numerical control method to accurately control the contact mode between the perovskite annealing hot plate and the TCO glass substrate, thereby achieving the problem of annealing uniformity over a large area and reducing the problem of poor perovskite crystallization quality caused by uneven annealing during the preparation of large-area perovskite films.
[0024] Preferably, the perovskite precursor solution comprises a perovskite precursor and a solvent; wherein the chemical formula of the perovskite precursor is ABX 3 , wherein A is any one of formamidinium ion, methylamine ion or cesium ion or a combination of at least two thereof, B is lead ion and / or tin ion, and X is a halogen ion.
[0025] It should be noted that the present invention does not specifically limit the type of solvent. For example, it can be N,N-dimethylformamide or dimethyl sulfoxide.
[0026] Preferably, the coating method comprises spin coating or blade coating.
[0027] Preferably, the area of the wet film is the same as the area of the TCO glass substrate.
[0028] Preferably, the temperature of the thermal annealing treatment is 50-200°C, for example, 50°C, 100°C, 150°C or 200°C.
[0029] Preferably, the area of the perovskite film is 0.1-2.4 m 2 , for example, it can be 0.1m 2 、0.5m 2 , 1m 2 , 1.5m 2 , 2m 2 or 2.4m 2 wait.
[0030] Preferably, the sub-heat plates below the edges of the TCO glass substrate are the sub-heat plates on the outermost four sides of the perovskite annealing hot plate.
[0031] In a third aspect, the present invention provides an application of the perovskite annealing hot plate as described in the first aspect in the photovoltaic field.
[0032] In a fourth aspect, the present invention provides a perovskite solar cell, comprising a stacked TCO glass, a first carrier transport layer, a perovskite film, a second carrier transport layer and an electrode, wherein the perovskite film is prepared by the preparation method described in the second aspect.
[0033] Preferably, the first carrier transport layer and the second carrier transport layer transport charges of opposite electrical properties.
[0034] Preferably, the first carrier transport layer is an electron transport layer, and the second carrier transport layer is a hole transport layer.
[0035] Preferably, the electron transport layer comprises a tin dioxide layer, a C 60 Any one of the layers or PCBM layers or a combination of at least two.
[0036] Preferably, the hole transport layer includes any one of a nickel oxide layer, a PEDOT:PSS layer, a PTAA layer or a Spiro-OMeTAD layer, or a combination of at least two thereof.
[0037] Preferably, the electrode is a metal electrode, and illustratively, it can be any one of an Ag electrode, an Au electrode or a Cu electrode.
[0038] The numerical range described in the present invention not only includes the point values listed above, but also includes any point values between the above numerical ranges that are not listed. Due to space limitations and for the sake of simplicity, the present invention no longer exhaustively lists the specific point values included in the range.
[0039] Compared with the prior art, the present invention has the following beneficial effects:
[0040] The present invention designs a perovskite annealing hot plate that can realize independent lifting of the sub-hot plate, can accurately control the close contact between the perovskite annealing hot plate and the entire TCO glass substrate, avoids the warping problem of the TCO glass substrate, and effectively improves the annealing uniformity and crystallization uniformity of the perovskite film. In particular, the perovskite annealing hot plate helps solve the problem of non-uniform perovskite crystallization quality caused by non-uniform annealing of large-area perovskite films (square meter level), improves device efficiency, and has very promising application prospects. BRIEF DESCRIPTION OF THE DRAWINGS
[0041] Figure 1 Schematic diagram of the perovskite annealing hot plate provided by the present invention.
[0042] Figure 2This is a schematic cross-sectional view of the TCO glass substrate provided by the present invention before thermal annealing.
[0043] Figure 3 This is a schematic cross-sectional view of the TCO glass substrate provided by the present invention during the thermal annealing process. DETAILED DESCRIPTION
[0044] It should be understood that, in the description of the present invention, the terms "center", "longitudinal", "lateral", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", etc., indicating the orientation or positional relationship are based on the orientation or positional relationship shown in the drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present invention. In addition, the terms "first", "second", etc. are only used for descriptive purposes, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Therefore, the features defined as "first", "second", etc. may explicitly or implicitly include one or more of the features. In the description of the present invention, unless otherwise specified, "multiple" means two or more.
[0045] It should be noted that in the description of the present invention, unless otherwise clearly specified and limited, the terms "disposed", "connected", and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be indirectly connected through an intermediate medium, or it can be the internal communication of two elements. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood by specific circumstances.
[0046] The technical solution of the present invention is further illustrated below through specific implementation methods.
[0047] In a specific embodiment, the present invention provides a perovskite annealing hot plate, wherein the perovskite annealing hot plate includes a plurality of sub-hot plates distributed in an array.
[0048] Each of the sub-heat plates has an independent lifting function and is used to keep in contact with the TCO glass substrate.
[0049] The present invention designs a perovskite annealing hot plate that can realize independent lifting of the sub-hot plate, can accurately control the close contact between the perovskite annealing hot plate and the entire TCO glass substrate, avoids the warping problem of the TCO glass substrate, and effectively improves the annealing uniformity and crystallization uniformity of the perovskite film. In particular, the perovskite annealing hot plate helps solve the problem of non-uniform perovskite crystallization quality caused by non-uniform annealing of large-area perovskite films (square meter level), improves device efficiency, and has very promising application prospects.
[0050] It should be noted that the present invention does not limit the type of TCO glass substrate. For example, it may be an ITO (indium tin oxide) glass substrate or a FTO (fluorine-doped tin oxide) glass substrate.
[0051] Furthermore, the areas of the plurality of sub-heat plates are the same.
[0052] In the present invention, a plurality of sub-heat plates of the same area are helpful to control the temperature of each sub-unit and the corresponding lifting height, so as to facilitate customized control of the annealing temperature of each sub-heat plate.
[0053] Furthermore, the perovskite annealing hot plate is divided into 6 mutually independent column units in sequence and at equal intervals in the first direction, and is divided into 5 mutually independent row units in sequence and at equal intervals in the second direction.
[0054] Further, each of the column units is distributed in a straight line along the first direction, and each of the row units is distributed in a straight line along the second direction.
[0055] For example, Figure 1 As shown, the perovskite annealing hot plate is divided into columns A, B, C, D, E and F in sequence and at equal intervals in the first direction, and is divided into rows 1, 2, 3, 4, 5 and 6 in sequence and at equal intervals in the second direction.
[0056] Furthermore, the plurality of sub-heat plates have the same operating temperature. In the present invention, the sub-heat plates having the same operating temperature is helpful to achieve uniform annealing of the perovskite film.
[0057] Furthermore, the rising distance of the sub-heat plate is 0-5 mm, and is not 0, for example, it can be 1 mm, 2 mm, 3 mm, 4 mm or 5 mm.
[0058] Furthermore, the descending distance of the sub-heat plate is 0-2 cm, and is not 0, for example, it can be 0.5 mm, 1 mm, 1.5 mm or 2 mm.
[0059] Furthermore, the rising rate of the sub-heat plate is 0-0.5 mm / s, and is not 0, for example, it can be 0.1 mm / s, 0.2 mm / s, 0.3 mm / s, 0.4 mm / s or 0.5 mm / s.
[0060] In the present invention, the sub-heat plate with a suitable rising rate helps to match the different sub-regions of the heat plate with the deformation of the substrate during the annealing process, so as to always maintain full contact with the substrate and maximize the annealing effect.
[0061] Furthermore, the descending rate of the sub-heat plate is 0-1 mm / s, and is not 0, for example, it can be 0.2 mm / s, 0.5 mm / s, 0.7 mm / s or 1 mm / s.
[0062] In another specific embodiment, the present invention provides a method for preparing a perovskite film, the preparation method comprising the following steps:
[0063] The perovskite precursor solution is coated onto the surface of the TCO glass substrate to form a wet film.
[0064] The TCO glass substrate with the wet film is placed on the surface of the perovskite annealing hot plate as described in the first aspect for thermal annealing treatment; during the thermal annealing treatment, the sub-hot plate located below the edges of the TCO glass substrate is controlled to rise to keep the TCO glass substrate in close contact with the sub-hot plate.
[0065] After the thermal annealing treatment is completed, the perovskite film is obtained.
[0066] Example 1
[0067] This embodiment provides a method for preparing a perovskite film, the preparation method comprising the following steps:
[0068] (1) The perovskite precursor solution is coated onto the surface of the ITO glass substrate using a slit coating method to form a wet film.
[0069] The perovskite precursor solution includes a perovskite precursor and a solvent, and the chemical formula of the perovskite precursor is MA 0.05 Cs 0.08 FA 0.87 Pb(I 0.95 Br 0.05 ) 3 The solvent includes N,N-dimethylformamide and dimethyl sulfoxide in a volume ratio of 1:1.
[0070] (2) placing the ITO glass substrate with the wet film on the surface of the perovskite annealing hot plate for thermal annealing; during the thermal annealing process, controlling the sub-hot plate located below the edges of the ITO glass substrate to rise, so as to keep the ITO glass substrate in close contact with the sub-hot plate.
[0071] The temperature of the thermal annealing treatment is 150° C., and the rising rate of the sub-heat plate is 0.5 mm / s.
[0072] Figure 2 FIG. 4 shows a schematic cross-sectional view of the perovskite annealing hot plate provided in this embodiment before thermal annealing. Figure 3 A schematic cross-sectional view of the perovskite annealing hot plate provided in this embodiment during the thermal annealing process is shown. By comparison, it can be seen that as the heating annealing continues, the glass substrate will warp, and the two sides will be higher than the center. At this time, the sub-hot plate located below the edges of the glass substrate is controlled to rise, so that the glass substrate and the perovskite annealing hot plate maintain complete contact annealing, which can maintain the uniformity of the perovskite annealing crystallization to the greatest extent.
[0073] (3) After the thermal annealing treatment, the area is 0.72m 2 of perovskite films.
[0074] Example 2
[0075] This embodiment provides a method for preparing a perovskite film, the preparation method comprising the following steps:
[0076] (1) The perovskite precursor solution is coated onto the surface of the ITO glass substrate using a slit coating method to form a wet film.
[0077] The perovskite precursor solution includes a perovskite precursor and a solvent. The chemical formula of the perovskite precursor is Cs 0.08 FA 0.92 Pb(I 0.95 Br 0.05 ) 3 The solvent includes N,N-dimethylformamide and dimethyl sulfoxide in a volume ratio of 1:1.
[0078] (2) placing the ITO glass substrate with the wet film on the surface of the perovskite annealing hot plate for thermal annealing; during the thermal annealing process, controlling the sub-hot plate located below the edges of the ITO glass substrate to rise, so as to keep the ITO glass substrate in close contact with the sub-hot plate.
[0079] The temperature of the thermal annealing treatment is 130° C., and the rising rate of the sub-heat plate is 0.2 mm / s.
[0080] (3) After the thermal annealing treatment, the area is 0.72m 2of perovskite films.
[0081] Example 3
[0082] This embodiment provides a method for preparing a perovskite film, the preparation method comprising the following steps:
[0083] (1) The perovskite precursor solution is coated onto the surface of the ITO glass substrate using a slit coating method to form a wet film.
[0084] The perovskite precursor solution includes a perovskite precursor and a solvent. The chemical formula of the perovskite precursor is Cs 0.1 FA 0.9 Pb(I 0.95 Br 0.05 ) 3 The solvent includes N,N-dimethylformamide and dimethyl sulfoxide in a volume ratio of 1:1.
[0085] (2) placing the ITO glass substrate with the wet film on the surface of the perovskite annealing hot plate for thermal annealing; during the thermal annealing process, controlling the sub-hot plate located below the edges of the ITO glass substrate to rise, so as to keep the ITO glass substrate in close contact with the sub-hot plate.
[0086] The temperature of the thermal annealing treatment is 175° C., and the rising rate of the sub-heat plate is 0.5 mm / s.
[0087] (3) After the thermal annealing treatment, the area is 0.72m 2 of perovskite films.
[0088] Example 4
[0089] The difference between this embodiment and embodiment 1 is that the rising rate of the sub-heat plate is 0.01 mm / s.
[0090] The rest of the structure, preparation method and parameters remain the same as those in Example 1.
[0091] Example 5
[0092] The difference between this embodiment and embodiment 1 is that the rising rate of the sub-heat plate is 0.8 mm / s.
[0093] The rest of the structure, preparation method and parameters remain the same as those in Example 1.
[0094] Comparative Example 1
[0095] The difference between this comparative example and Example 1 is that the perovskite annealing hot plate is composed of only one whole hot plate, that is, the hot plate does not have a lifting function.
[0096] The rest of the structure, preparation method and parameters remain the same as those in Example 1.
[0097] Application Example 1
[0098] This application example provides a perovskite solar cell, which comprises a stacked ITO glass, an electron transport layer, a perovskite film, a hole transport layer and an electrode; wherein the electron transport layer is C 60 layer, the hole transport layer is a nickel oxide layer, and the electrode is copper.
[0099] This application example also provides a method for preparing the above-mentioned perovskite solar cell, comprising the following steps:
[0100] (1) The hole transport layer was prepared on the ITO glass by magnetron sputtering.
[0101] (2) The perovskite precursor solution is coated on the hole transport layer by a slit coating method, and then a perovskite film is obtained by the preparation method of the perovskite film as described in Example 1.
[0102] (3) The electron transport layer is prepared on the perovskite film by using the evaporation method.
[0103] (4) The electrode is prepared on the electron transport layer by thermal evaporation.
[0104] Application Example 2-5
[0105] The difference between Application Example 2-5 and Application Example 1 is that the perovskite thin films in Application Examples 2-5 are prepared by using the preparation methods of the perovskite thin films described in Examples 2-5.
[0106] The rest of the structure, preparation method and parameters are consistent with those in Application Example 1.
[0107] Application Comparative Example 1
[0108] The difference between Application Comparative Example 1 and Application Example 1 is that the perovskite film in Application Comparative Example 1 is prepared by the preparation method of the perovskite film described in Comparative Example 1.
[0109] The rest of the structure, preparation method and parameters are consistent with those in Application Example 1.
[0110] Performance Testing
[0111] The photoelectric performance of the perovskite solar cells provided in the above application examples and application comparison examples was tested.
[0112] Test conditions: Radiation intensity: 1000w / m 2 ; Pre-illumination time: 20000ms; Scanning time: 15000ms, scanning interval 5s; Pre-scanning delay: 10s; Current range: 2A; Voltage range: 150V.
[0113] The test results are shown in Table 1.
[0114] Table 1
[0115]
[0116]
[0117] analyze:
[0118] It can be seen from the above table that the perovskite annealing hot plate designed in the present invention can accurately control the close contact between the perovskite annealing hot plate and the entire TCO glass substrate, avoiding the warping problem of the TCO glass substrate, and effectively improving the annealing uniformity and crystallization uniformity of the perovskite film. The perovskite solar cell prepared based on this exhibits excellent photoelectric performance and has very promising application prospects.
[0119] By comparing Application Example 1 with Application Examples 4-5, it can be seen that if the rising rate of the sub-heat plate is too slow, it is not conducive to improving the fill factor of the device; if the rising rate of the sub-heat plate is too fast, it is not conducive to improving the current density of the device.
[0120] By comparing Application Example 1 with Application Comparative Example 1, it can be seen that if the perovskite annealing hot plate is composed of only one whole hot plate, the warping problem of the glass substrate cannot be solved during the thermal annealing process, and the edges of the glass substrate become non-contact annealing, and close contact between the perovskite annealing hot plate and the glass substrate cannot be achieved. The annealing temperature is reduced, resulting in a decrease in the annealing uniformity and crystallization uniformity of the perovskite film, and the photoelectric performance of the perovskite solar cell is poor.
[0121] The applicant declares that the present invention illustrates the process method of the present invention through the above-mentioned embodiments, but the present invention is not limited to the above-mentioned process steps, that is, it does not mean that the present invention must rely on the above-mentioned process steps to be implemented. Those skilled in the art should understand that any improvement of the present invention, equivalent replacement of the raw materials selected by the present invention, addition of auxiliary components, selection of specific methods, etc., all fall within the protection scope and disclosure scope of the present invention.
Claims
1. A perovskite annealing hot plate, characterized in that: The perovskite annealing hot plate includes a plurality of sub-hot plates distributed in an array; Each of the sub-heat plates has an independent lifting function and is used to keep in contact with the TCO glass substrate.
2. The perovskite annealing hot plate according to claim 1, characterized in that: The areas of the plurality of sub-heat plates are the same.
3. The perovskite annealing hot plate according to claim 1 or 2, characterized in that: The perovskite annealing hot plate is divided into 6 mutually independent column units in sequence and at equal intervals in the first direction, and is divided into 5 mutually independent row units in sequence and at equal intervals in the second direction; Preferably, each of the column units is distributed in a straight line along a first direction, and each of the row units is distributed in a straight line along a second direction, and the first direction and the second direction are perpendicular to each other.
4. The perovskite annealing hot plate according to claim 3, characterized in that: The plurality of sub-heat plates have the same operating temperature.
5. The perovskite annealing hot plate according to any one of claims 1 to 4, characterized in that: The rising distance of the sub-heat plate is 0-5mm and is not 0; Preferably, the descending distance of the sub-heat plate is 0-2 cm, and is not 0.
6. The perovskite annealing hot plate according to any one of claims 1 to 5, characterized in that: The rising rate of the sub-heat plate is 0-5 mm / s and is not 0; Preferably, the descending rate of the sub-heat plate is 0-10 mm / s, and is not zero.
7. A method for preparing a perovskite film, characterized in that: The preparation method comprises the following steps: Applying a perovskite precursor solution to the surface of a TCO glass substrate to form a wet film; Placing the TCO glass substrate with the wet film on the surface of the perovskite annealing hot plate as described in any one of claims 1 to 6 for thermal annealing treatment; during the thermal annealing treatment, controlling the sub-hot plate located below the edges of the TCO glass substrate to rise, and keeping the TCO glass substrate in close contact with the sub-hot plate; After the thermal annealing treatment is completed, the perovskite film is obtained.
8. The preparation method according to claim 7, characterized in that: The perovskite precursor solution includes a perovskite precursor and a solvent; wherein the chemical formula of the perovskite precursor is ABX3, wherein A is any one of formamidinium ions, methylamine ions or cesium ions or a combination of at least two, B is lead ions and / or tin ions, and X is a halogen ion; Preferably, the area of the wet film is the same as the area of the TCO glass substrate.
9. The preparation method according to claim 7 or 8, characterized in that: The temperature of the thermal annealing treatment is 50-200°C; Preferably, the area of the perovskite film is 0.1-2.4 m 2 ; Preferably, the sub-heat plates below the edges of the TCO glass substrate are the sub-heat plates on the outermost four sides of the perovskite annealing hot plate.
10. Application of the perovskite annealing hot plate according to any one of claims 1 to 6 in the photovoltaic field.