Method and device for evaluating deformation performance of substrate

Abstract

The invention provides a method and device for evaluating the deformation performance of a substrate, and the method comprises the steps: depositing a thin film layer on the surface of a to-be-measured substrate, carrying out the heat treatment, and measuring the morphology data of the to-be-measured substrate after the heat treatment; performing stress release on the to-be-measured substrate after heat treatment, and measuring morphology data of the to-be-measured substrate after stress release; and according to the morphology data of the to-be-measured substrate after heat treatment and the morphology data of the to-be-measured substrate after stress release, obtaining the elastic deformation amount of the to-be-measured substrate.

Description

Technical Field

[0001] The present disclosure relates to the field of semiconductor manufacturing technology, and in particular to a method and device for evaluating deformation performance of a substrate. Background Art

[0002] The semiconductor manufacturing process includes various heat treatment processes. During the execution of these processes, the stress generated by the high temperature environment will cause dislocations in the silicon wafer or silicon substrate, and then plastic deformation will occur. For example, in a high temperature environment above 800°C, the silicon substrate will change from brittle to plastic and easily deform. This plastic deformation is not only irreversible, but also affects the performance of semiconductor devices and reduces the yield.

[0003] Currently, it is difficult to accurately evaluate the plastic deformation generated on a silicon substrate, which makes it impossible to separate the elastic deformation from the plastic deformation, and thus it is impossible to accurately evaluate the high-temperature deformation performance of the silicon substrate. Summary of the invention

[0004] The present disclosure provides a method and device for evaluating the deformation performance of a substrate; the method and device can accurately evaluate the deformation performance of a silicon substrate during the semiconductor device manufacturing process.

[0005] The technical solution of the present disclosure is achieved as follows: In a first aspect, the present disclosure provides a method for evaluating deformation performance of a substrate, the method comprising: After depositing a thin film layer on the surface of the substrate to be tested, heat treatment is performed, and the topography data of the substrate to be tested after the heat treatment is measured; performing stress release on the substrate to be tested after the heat treatment, and measuring the morphology data of the substrate to be tested after the stress release; The elastic deformation of the substrate to be tested is obtained according to the morphology data of the substrate to be tested after the heat treatment and the morphology data of the substrate to be tested after the stress is released.

[0006] In some examples, the method further includes: Providing a substrate to be tested; A thin film layer is deposited on the surface of the substrate to be tested.

[0007] In some examples, depositing a thin film layer on a surface of a substrate to be tested includes: Based on the APCVD process, a silicon dioxide thin film layer with a thickness of 600 nanometers is formed on the surface of the substrate to be tested at 450°C.

[0008] In some examples, a thermal treatment is performed after a thin film layer is deposited on a surface of a substrate to be tested, including: One hour after the thin film layer is deposited on the surface of the substrate to be tested, the substrate to be tested on which the thin film layer is deposited is heat-treated through two heat treatment processes.

[0009] In some examples, the temperature of the first heat treatment in the two heat treatment processes is 810 degrees Celsius, and the duration of the first heat treatment is 5 hours; the temperature of the second heat treatment in the two heat treatment processes is 1100 degrees Celsius, and the duration of the second heat treatment is 20 hours.

[0010] In some examples, measuring the topography data of the substrate to be tested after the heat treatment includes: After the substrate to be tested on which the thin film layer is deposited is subjected to heat treatment for 1 hour, the topography data of the substrate to be tested after the heat treatment is measured.

[0011] In some examples, stress relief is performed on the substrate to be tested after heat treatment, including: The stress of the substrate to be tested after heat treatment is released by means of a hot water bath; Alternatively, stress release is performed by etching the thin film layer of the substrate to be tested after heat treatment; Alternatively, the stress of the substrate to be tested after the heat treatment is released by naturally standing.

[0012] In some examples, the method further includes: before depositing the thin film layer on the surface of the substrate to be tested, cleaning the surface of the substrate to be tested and measuring original topography data of the substrate to be tested.

[0013] In some examples, obtaining the elastic deformation of the substrate to be tested according to the morphology data of the substrate to be tested after heat treatment and the morphology data of the substrate to be tested after stress release includes: Acquire a first difference between the topography data of the substrate to be tested after heat treatment and the original topography data; Acquire a second difference between the topography data of the substrate to be tested after stress release and the original topography data; The elastic deformation of the substrate to be measured is obtained according to the first difference and the second difference.

[0014] In a second aspect, the present disclosure provides a device for evaluating deformation performance of a substrate, the device comprising: a deposition part, a heat treatment part, a measurement part, a stress release part, and an acquisition part; wherein, A deposition part, configured to deposit a thin film layer on the surface of the substrate to be tested; A heat treatment unit configured to perform heat treatment on the substrate to be tested on which the thin film layer is deposited; A measuring unit configured to measure the topography data of the substrate to be measured after the heat treatment; A stress release portion, configured to release stress on the substrate to be tested after heat treatment; The measuring unit is further configured to measure the topography data of the substrate to be tested after stress release; The acquisition unit is configured to acquire the elastic deformation amount of the substrate to be tested according to the topography data of the substrate to be tested after the heat treatment and the topography data of the substrate to be tested after the stress is released.

[0015] In some examples, the deposition portion is configured to: Based on the APCVD process, a silicon dioxide thin film layer with a thickness of 600 nanometers is formed on the surface of the substrate to be tested at 450°C.

[0016] In some examples, the thermal processing portion is configured to: One hour after the thin film layer is deposited on the surface of the substrate to be tested, the substrate to be tested on which the thin film layer is deposited is heat-treated through two heat treatment processes.

[0017] In some examples, the temperature of the first heat treatment in the two heat treatment processes is 810 degrees Celsius, and the duration of the first heat treatment is 5 hours; the temperature of the second heat treatment in the two heat treatment processes is 1100 degrees Celsius, and the duration of the second heat treatment is 20 hours.

[0018] In some examples, the measuring unit is configured to: After the substrate to be tested on which the thin film layer is deposited is subjected to heat treatment for 1 hour, the topography data of the substrate to be tested after the heat treatment is measured.

[0019] In some examples, the stress relief portion is configured to: The stress of the substrate to be tested after heat treatment is released by means of a hot water bath; Alternatively, stress release is performed by etching the thin film layer of the substrate to be tested after heat treatment; Alternatively, the stress of the substrate to be tested after the heat treatment is released by naturally standing.

[0020] In some examples, the measuring unit is further configured to: Before depositing a thin film layer on the surface of the substrate to be tested, the original morphology data of the cleaned substrate to be tested is measured.

[0021] In some examples, the acquisition unit is configured to: Acquire a first difference between the topography data of the substrate to be tested after heat treatment and the original topography data; Acquire a second difference between the topography data of the substrate to be tested after stress release and the original topography data; The elastic deformation of the substrate to be measured is obtained according to the first difference and the second difference.

[0022] The present disclosure provides a method and device for evaluating the deformation performance of a substrate; after a thin film layer is deposited on the surface of the substrate, the stress generated by the thin film layer during heat treatment is used as a load to induce deformation, so that the load can cover the entire surface of the substrate to be tested, which is closer to the load that the substrate is subjected to during heat treatment in a high-temperature environment, thereby being able to more accurately evaluate the plastic deformation performance and elastic deformation performance of the substrate. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] Figure 1 A schematic flow chart of a method for evaluating deformation performance of a substrate provided in the present disclosure.

[0024] Figure 2 A surface schematic diagram of a substrate provided in the present disclosure.

[0025] Figure 3 A schematic flow chart of another method for evaluating deformation performance of a substrate provided in the present disclosure.

[0026] Figure 4 A schematic diagram of the composition of a device for evaluating the deformation performance of a substrate provided in the present invention. DETAILED DESCRIPTION

[0027] The technical solutions in the present disclosure will be described clearly and completely below in conjunction with the accompanying drawings in the present disclosure.

[0028] In the present disclosure, the plastic deformation performance of the substrate is evaluated by the degree of morphological change caused by plastic deformation of the substrate. In some examples, during the heat treatment process, the substrate is induced to deform by applying a load on the surface of the substrate. When the ambient temperature of the heat treatment reaches 800°C or above, the substrate will change from brittle to plastic. Then, under the above high temperature conditions, the deformation of the substrate consists of elastic deformation and plastic deformation. If the degree of plastic deformation of the substrate is lower under the above high temperature conditions, it means that the degree of morphological change caused by plastic deformation of the substrate under high temperature conditions is smaller, and it can be known that the substrate has higher resistance to plastic deformation.

[0029] In the related scheme, a load is applied to the substrate by means of a three-point bending test or a four-point bending test in a high temperature environment, and the degree of morphological change of the substrate caused by plastic deformation is calculated. During the three-point bending test or the four-point bending test, the applied load is a linear load, which cannot accurately simulate the load on the substrate during the heat treatment process in a high temperature environment. Therefore, the deformation performance accuracy of the substrate obtained by the related scheme is low.

[0030] In order to improve the accuracy of evaluating the deformation performance of the substrate, the present disclosure hopes to provide a load that is closer to the load that the substrate is subjected to during the heat treatment process in a high temperature environment, and evaluate the plastic deformation performance and elastic deformation performance of the substrate based on the load. Figure 1 , which shows a method for evaluating deformation performance of a substrate provided by the present disclosure, the method comprising steps S101 to S103.

[0031] S101: performing heat treatment after depositing a thin film layer on the surface of the substrate to be tested, and measuring the morphology data of the substrate to be tested after the heat treatment.

[0032] In the present disclosure, since the load on the substrate to be tested during the heat treatment process is not limited to some lines, but is the load on the entire substrate, the present disclosure uses the stress generated by the thin film layer deposited on the surface of the substrate to be tested in a high temperature environment as the load on the substrate to be tested during the heat treatment process in the high temperature environment. Since the stress generated by the thin film layer in a high temperature environment can cover the entire surface of the substrate to be tested, each position on the entire substrate surface is subjected to the load, which is closer to the load on the substrate during the heat treatment process in a high temperature environment.

[0033] In some examples, the material of the thin film layer is silicon dioxide or nitride.

[0034] In the present disclosure, after a thin film layer is deposited on the surface of the substrate to be tested, a heat treatment process is performed on the substrate to be tested with the thin film layer deposited thereon. In the high temperature environment of the heat treatment process, the stress generated by the thin film layer will induce deformation of the substrate to be tested.

[0035] In some examples, when the ambient temperature of the heat treatment reaches 800°C or above, the deformation induced by the thin film layer includes elastic deformation and plastic deformation. That is, after the heat treatment, the morphological data of the substrate to be tested can characterize the degree of morphological change caused by the combination of elastic deformation and plastic deformation.

[0036] In some examples, such as Figure 2 As shown, the substrate 2 includes two opposite surfaces, which are respectively referred to as the front side 21 and the back side 22. Specifically, in the subsequent semiconductor device manufacturing process, the surface of the semiconductor device formed by patterning is the front side, and the other surface opposite to the front side 21 is the back side 22. In the present disclosure, the thin film layer 3 is deposited on the back side 22 of the substrate 2. Then, the stress generated by the thin film layer 3 in a high temperature environment will make the morphological change of the front side 21 smaller than the morphological change of the back side 22. In order to evaluate the anti-deformation performance of the substrate, the morphological data of the substrate to be tested after heat treatment and the subsequent morphological data of the substrate to be tested can be obtained by measuring the morphology of the front side 21, which will not be repeated in the present disclosure.

[0037] S102: performing stress release on the substrate to be tested after the heat treatment, and measuring the morphology data of the substrate to be tested after the stress release.

[0038] In the present disclosure, elastic deformation is reversible, that is, when the load is removed, the elastic deformation can be restored. When the stress generated by the thin film layer is eliminated, it means that the load applied to the substrate to be tested is also eliminated, the elastic deformation of the substrate to be tested will be restored, and only the irreversible plastic deformation will remain on the substrate to be tested. Based on this, after the stress of the substrate to be tested after heat treatment is released, the morphological data of the substrate to be tested after the stress is released can characterize the degree of morphological change caused only by plastic deformation, which can also be referred to as the amount of plastic deformation in the present disclosure.

[0039] S103: Obtaining the elastic deformation of the substrate to be tested according to the topography data of the substrate to be tested after the heat treatment and the topography data of the substrate to be tested after the stress is released.

[0040] From the above steps, it can be seen that the morphological data of the substrate to be tested after heat treatment can characterize the degree of morphological change caused by the combination of elastic deformation and plastic deformation, and the morphological data of the substrate to be tested after stress release can characterize the degree of morphological change caused by plastic deformation alone. Based on this, by removing the morphological data of the substrate to be tested after stress release from the morphological data of the substrate to be tested after heat treatment, the degree of morphological change caused by elastic deformation alone can be obtained, that is, the elastic deformation amount pass Figure 1 The technical solution shown, after depositing a thin film layer on the surface of the substrate, uses the stress generated by the thin film layer during the heat treatment process as the load inducing deformation, so that the load can cover the entire surface of the substrate to be tested, which is closer to the load that the substrate is subjected to during the heat treatment process in a high temperature environment, thereby being able to more accurately evaluate the plastic deformation performance and elastic deformation performance of the substrate.

[0041] Based on the above Figure 1 The technical solution shown in Figure 3 , which shows a method for evaluating deformation performance of a substrate provided by the present disclosure, the method may include: S301: providing a substrate to be tested.

[0042] In the present disclosure, the substrate to be tested can be Figure 2 As shown, no further description is given here.

[0043] S302: Cleaning the surface of the substrate to be tested and measuring original topography data of the substrate to be tested.

[0044] In the present disclosure, in order to eliminate errors caused by impurities or damage on the substrate surface, before executing the technical solution of the present disclosure, the substrate to be tested may be cleaned, and the original morphology data of the cleaned substrate to be tested may be measured.

[0045] In some examples, the substrate to be tested provided in step S301 may be cleaned in a cleaning tank using ozone, hydrogen fluoride, ozone, SC1 cleaning solution, SC2 cleaning solution, and ozone in sequence.

[0046] In some examples, after cleaning is completed, the front side of the cleaned substrate to be tested is measured by means of an interferometer or a capacitance method to obtain the original morphology data. For example, multiple sampling points are evenly selected on the front side of the substrate to be tested, and the height value of each sampling point is obtained by means of an interferometer or a capacitance method. The height values ​​of all sampling points form a three-dimensional surface. The three-dimensional surface represents the original morphology data of the cleaned substrate to be tested.

[0047] S303: depositing a thin film layer on the surface of the substrate to be tested.

[0048] In the present disclosure, a thin film layer may be deposited on the back side of a substrate to be tested.

[0049] In addition, the thermal stress provided by the film layer in a thermal environment can be expressed as follows:

[0050] in, is the Young's modulus of the film layer, is the Poisson's ratio of the film material, is the thermal expansion coefficient of the film material Thermal expansion coefficient with substrate material The difference between , It is the temperature change of the thin film material and the substrate material under the same thermal environment.

[0051] Based on the above formula, in order to allow the film to generate thermal stress only during the heat treatment process and use the thermal stress as the load borne by the substrate to be tested, in the present disclosure, the temperature of the deposited film layer should not be too high to avoid plastic deformation of the substrate during the deposition process, and there should be a large temperature difference between the temperature of the deposited film layer and the temperature of the heat treatment. In addition, the thickness of the film layer should also cause the film layer to generate a certain stress.

[0052] Based on this, in some examples, the present disclosure adopts an APCVD process to form a silicon dioxide thin film layer with a thickness of 600 nanometers on the surface of the substrate to be tested in an environment of 450°C.

[0053] S304: After the thin film layer is deposited on the surface of the substrate to be tested for 1 hour, the substrate to be tested on which the thin film layer is deposited is heat treated by two heat treatment processes.

[0054] In the present disclosure, after the film deposition is completed, the film layer can be left to stand for one hour to release the stress generated during the deposition process. After standing for one hour, the substrate to be tested on which the film layer is deposited is heat treated according to two heat treatment processes, so that the thermal stress generated by the film layer is applied as a load to the back side of the substrate to be tested, so as to induce deformation of the substrate to be tested.

[0055] In some examples, the temperature of the first heat treatment in the above two heat treatment processes is 810 degrees Celsius, and the duration of the first heat treatment is 5 hours; the temperature of the second heat treatment in the two heat treatment processes is 1100 degrees Celsius, and the duration of the second heat treatment is 20 hours.

[0056] S305: After the substrate to be tested on which the thin film layer is deposited is subjected to heat treatment for 1 hour, the topography data of the substrate to be tested after the heat treatment is measured.

[0057] In the present disclosure, since the temperatures of the above two heat treatment processes are both higher than 800 degrees, the substrate to be tested will not only undergo elastic deformation, but also plastic deformation. After the heat treatment is completed and cooled for 1 hour, multiple sampling points are uniformly selected on the front of the substrate to be tested after the heat treatment, and the height value of each sampling point is obtained by means of an interferometer or a capacitance method. The height values ​​of all sampling points form a three-dimensional surface. The three-dimensional surface represents the morphological data of the substrate to be tested after the heat treatment.

[0058] It can be understood that the morphological data of the substrate to be tested after the heat treatment includes not only the morphological changes of elastic deformation, but also the morphological changes of plastic deformation.

[0059] S306: performing stress release on the substrate to be tested after the heat treatment, and measuring the morphology data of the substrate to be tested after the stress release.

[0060] In the present disclosure, the stress generated by the thin film layer is eliminated through stress release, and the load applied to the substrate to be tested is also eliminated. At this time, the elastic deformation of the substrate to be tested will be restored, and only the irreversible plastic deformation will remain.

[0061] In some examples, methods of stress relief include: The stress of the substrate to be tested after heat treatment is released by means of a hot water bath; Alternatively, stress release is performed by etching the thin film layer of the substrate to be tested after heat treatment; Alternatively, the stress of the substrate to be tested after the heat treatment is released by naturally standing.

[0062] It should be noted that after the elastic deformation of the substrate to be tested is restored by the above exemplary stress release means, multiple sampling points can be evenly selected on the front side of the substrate to be tested after stress release, and the height value of each sampling point can be obtained by means of interferometer or capacitance method. The height values ​​of all sampling points form a three-dimensional surface. The three-dimensional surface represents the morphology data of the substrate to be tested after heat treatment.

[0063] It can be understood that the morphological data of the substrate to be tested after the stress is released only retains the morphological changes of the plastic deformation.

[0064] S307: Obtaining the elastic deformation of the substrate to be tested according to the original morphology data, the morphology data of the substrate to be tested after the heat treatment, and the morphology data of the substrate to be tested after stress release.

[0065] It should be noted that although the morphological data of the substrate to be tested after heat treatment includes the morphological changes of elastic deformation and the morphological changes of plastic deformation, the morphological data of the substrate to be tested after stress release only retains the morphological changes of plastic deformation. However, if it is necessary to separate the morphological changes of elastic deformation and the morphological changes of plastic deformation for more accurate characterization, then the original morphological data is required as the "standard" morphological data before the change. In this way, the morphological changes caused by elastic deformation and / or plastic deformation can be calculated based on the "standard" morphological data.

[0066] Based on this, in some examples, the first difference between the morphology data of the substrate to be tested after heat treatment and the original morphology data can be obtained to obtain the morphology change caused by the combination of elastic deformation and plastic deformation, that is, the combined deformation amount. It can be understood that this example can be implemented after completing step S305.

[0067] In some examples, the second difference between the topography data of the substrate to be tested after stress release and the original topography data can be obtained to obtain the topography change amount caused only by plastic deformation, that is, the plastic deformation amount. It can be understood that this example can be implemented after completing step S306.

[0068] In some examples, after obtaining the first difference and the second difference, the morphological change amount of the substrate to be tested caused only by plastic deformation, that is, the elastic deformation amount, can be obtained according to the difference between the first difference and the second difference.

[0069] For the above technical solution, it should be noted that after obtaining the above morphological data, some evaluation indicators can be obtained based on the morphological data to characterize its morphology. Exemplary evaluation indicators may include, for example, Bow 1, i.e., Bow-3p index, Bow 2, i.e., Bow-BF index, Warp, or Nanotopography Value (NT).

[0070] Based on the aforementioned technical solution, two embodiments of the present disclosure illustrate the implementation effect of the aforementioned technical solution. It can be understood that the technical solution of the present disclosure is not limited to the following two embodiments.

[0071] Embodiment 1 The substrate to be tested is a polished silicon wafer with a resistivity of 8 ohm·cm and an oxygen concentration Oi of 8 ppma and no crystal native defects (COP Free). The evaluation results characterized by the above evaluation indicators (Bow1, Bow2, Warp and NT) are shown in Table 1:

[0072] Table 1 Embodiment 2 The substrate to be tested is an epitaxial silicon wafer with a resistivity of 0.01 ohm·cm (Ω·cm) and an oxygen concentration Oi of 14 ppma. After evaluation by the technical solution disclosed in the present invention, the evaluation results characterized by the above evaluation indicators (Bow1, Bow2, Warp and NT) are shown in Table 2:

[0073] Table 2 Through the above two embodiments, combined with the data shown in Table 1 and Table 2, the technical solution of the present disclosure can evaluate the deformation amounts caused by elastic deformation and plastic deformation respectively.

[0074] Based on the same inventive concept as the above technical solution, see Figure 4 , which shows a device 40 for evaluating the deformation performance of a substrate provided by the present disclosure, the device 40 comprises: a deposition part 41, a heat treatment part 42, a measurement part 43, a stress release part 44 and an acquisition part 45; wherein, The deposition part 41 is configured to deposit a thin film layer on the surface of the substrate to be tested; The heat treatment unit 42 is configured to perform heat treatment on the substrate to be tested on which the thin film layer is deposited; The measuring unit 43 is configured to measure the topography data of the substrate to be measured after the heat treatment; The stress release portion 44 is configured to release stress of the substrate to be tested after heat treatment; The measuring unit 43 is further configured to measure the topography data of the substrate to be tested after stress release; The acquisition unit 45 is configured to acquire the elastic deformation amount of the substrate to be tested based on the topography data of the substrate to be tested after the heat treatment and the topography data of the substrate to be tested after the stress is released.

[0075] In some examples, the deposition unit 41′ is configured to: Based on the APCVD process, a silicon dioxide thin film layer with a thickness of 600 nanometers is formed on the surface of the substrate to be tested at 450°C.

[0076] In some examples, the thermal processing unit 42′ is configured to: One hour after the thin film layer is deposited on the surface of the substrate to be tested, the substrate to be tested on which the thin film layer is deposited is heat-treated through two heat treatment processes.

[0077] In some examples, the temperature of the first heat treatment in the two heat treatment processes is 810 degrees Celsius, and the duration of the first heat treatment is 5 hours; the temperature of the second heat treatment in the two heat treatment processes is 1100 degrees Celsius, and the duration of the second heat treatment is 20 hours.

[0078] In some examples, the measuring unit 43′ is configured to: After the substrate to be tested on which the thin film layer is deposited is subjected to heat treatment for 1 hour, the topography data of the substrate to be tested after the heat treatment is measured.

[0079] In some examples, the stress relief portion 44′ is configured to: The stress of the substrate to be tested after heat treatment is released by means of a hot water bath; Alternatively, stress release is performed by etching the thin film layer of the substrate to be tested after heat treatment; Alternatively, the stress of the substrate to be tested after the heat treatment is released by naturally standing.

[0080] In some examples, the measuring unit 43′ is further configured to: Before depositing a thin film layer on the surface of the substrate to be tested, the original morphology data of the cleaned substrate to be tested is measured.

[0081] In some examples, the acquisition unit 45′ is configured to: Acquire a first difference between the topography data of the substrate to be tested after heat treatment and the original topography data; Acquire a second difference between the topography data of the substrate to be tested after stress release and the original topography data; The elastic deformation of the substrate to be measured is obtained according to the first difference and the second difference.

[0082] It should be noted that the technical solutions described in the present disclosure can be combined arbitrarily without conflict.

[0083] The above is only a specific embodiment of the present invention, but the protection scope of the present invention is not limited thereto. Any person skilled in the art who is familiar with the technical field can easily think of changes or substitutions within the technical scope disclosed by the present invention, which should be included in the protection scope of the present invention. Therefore, the protection scope of the present invention should be based on the protection scope of the claims.

Claims

1. A method for evaluating the deformation performance of a substrate, characterized in that The method comprises: After a thin film layer is deposited on the surface of the substrate to be tested, heat treatment is performed, and the topography data of the substrate to be tested after the heat treatment is measured; performing stress release on the substrate to be tested after the heat treatment, and measuring the topography data of the substrate to be tested after the stress release; The elastic deformation amount of the substrate to be tested is obtained according to the topography data of the substrate to be tested after the heat treatment and the topography data of the substrate to be tested after the stress is released.

2. The method according to claim 1, characterized in that: The method further comprises: Providing a substrate to be tested; A thin film layer is deposited on the surface of the substrate to be tested.

3. The method according to claim 2, characterized in that The step of depositing a thin film layer on the surface of the substrate to be tested comprises: Based on the APCVD process, a silicon dioxide thin film layer with a thickness of 600 nanometers is formed on the surface of the substrate to be tested at 450°C.

4. The method according to claim 1, characterized in that The step of performing heat treatment after depositing a thin film layer on the surface of the substrate to be tested comprises: One hour after the thin film layer is deposited on the surface of the substrate to be tested, the substrate to be tested on which the thin film layer is deposited is heat treated through two heat treatment processes.

5. The method according to claim 4, characterized in that The temperature of the first heat treatment in the two heat treatment processes is 810 degrees Celsius, and the duration of the first heat treatment is 5 hours; the temperature of the second heat treatment in the two heat treatment processes is 1100 degrees Celsius, and the duration of the second heat treatment is 20 hours.

6. The method according to claim 1, characterized in that The measuring the morphology data of the substrate to be measured after the heat treatment comprises: After the substrate to be tested on which the thin film layer is deposited is subjected to a heat treatment for 1 hour, the topography data of the substrate to be tested after the heat treatment is measured.

7. The method according to claim 1, characterized in that The step of releasing stress from the substrate to be tested after the heat treatment comprises: Releasing stress of the substrate to be tested after the heat treatment by means of a hot water bath; Alternatively, stress release is performed by etching the thin film layer of the substrate to be tested after the heat treatment; Alternatively, the stress of the substrate to be tested after the heat treatment is released by naturally standing still.

8. The method according to claim 1, characterized in that: The method further comprises: before depositing a thin film layer on the surface of the substrate to be tested, cleaning the surface of the substrate to be tested and measuring original topography data of the substrate to be tested.

9. The method according to claim 8, characterized in that The step of obtaining the elastic deformation of the substrate to be tested according to the topography data of the substrate to be tested after the heat treatment and the topography data of the substrate to be tested after the stress release comprises: Acquire a first difference between the topography data of the substrate to be tested after the heat treatment and the original topography data; Acquire a second difference between the topography data of the substrate to be tested after the stress is released and the original topography data; The elastic deformation of the substrate to be tested is obtained according to the first difference and the second difference.

10. A device for evaluating deformation properties of a substrate, characterized in that The device comprises: a deposition part, a heat treatment part, a measurement part, a stress release part and an acquisition part; wherein, The deposition part is configured to deposit a thin film layer on the surface of the substrate to be tested; The heat treatment section is configured to perform heat treatment on the substrate to be tested on which the thin film layer is deposited; The measuring part is configured to measure the topography data of the substrate to be measured after the heat treatment; The stress release portion is configured to release stress of the substrate to be tested after the heat treatment; The measuring unit is further configured to measure the topography data of the substrate to be measured after stress release; The acquisition unit is configured to acquire the elastic deformation amount of the substrate to be tested according to the topography data of the substrate to be tested after the heat treatment and the topography data of the substrate to be tested after the stress is released.

Images