Thermal resistance testing method based on integrated thin film heat source and temperature measuring unit

Abstract

The invention provides a thermal resistance testing method based on an integrated thin film heat source and a temperature measuring unit. The thermal resistance testing method comprises the following steps: forming a metal thin film layer on a first working surface of a to-be-tested element by using a coating process; and vacuumizing the area where the to-be-tested element is located, and heating the to-be-tested element by using the metal film layer. According to the thermal resistance testing method based on the integrated thin film heat source and the temperature measuring unit, the metal thin film layer is formed on the first working face of the element to be tested through the coating technology, the contact reliability of the metal thin film layer and the first working face is guaranteed, and the heat transfer process is simplified. When the metal film layer is used for heating the to-be-tested element, accurate heat transfer of the to-be-tested element can be guaranteed, the heating effect of the first working face of the to-be-tested element is guaranteed, meanwhile, the to-be-tested element is arranged in the vacuum environment, errors caused by the fact that air takes away part of heat can be avoided, and the test accuracy is improved. And the testing precision of the thermal resistance of the to-be-tested element is improved.

Description

Technical Field

[0001] The invention relates to the technical field of performance testing, and in particular to a thermal resistance testing method based on an integrated thin film heat source and a temperature measuring unit. Background Art

[0002] Thermal resistance is an inherent property of materials or devices. For tiny devices, the size of their thermal resistance is not only related to the constituent materials, but also closely related to the device structure, surface area, gaps, and material interfaces. Therefore, the thermal resistance of devices with more complex structures cannot be simply calculated, and corresponding thermal resistance testing devices and methods are required to complete the test. The test of the components to be tested mainly requires the accurate real-time acquisition of the upper and lower surface temperatures of the components to be tested and the accurate control of the surface heat transfer. The existing thermal resistance test methods for components to be tested mainly include contact and non-contact methods: Non-contact testing methods often use large-scale equipment such as time-domain thermal reflection systems, infrared cameras, and infrared heating light sources to collect temperature and heat transfer. However, the equipment required for this type of method is expensive, the platform construction is complex, and the temperature collected by the non-contact method depends on the surface reflectivity of the material. Therefore, when the surface material is inconsistent, the collected temperature will have a large error. In addition, when using the non-contact method to perform surface heat transfer on the device under test, due to the large size of the test instrument and the test is performed in an air environment, air convection will take away a considerable amount of heat. Since the volume of the component under test itself is small, this part of the lost heat will cause a large error.

[0003] The contact test method usually uses the micro heat source method for testing. A heat source with a tiny constant power output is placed against the surface of the device to transfer heat to the device quantitatively. At the same time, a thermocouple is used to assist in testing the temperature at the upper and lower ends of the device. This method also has a large overall equipment volume and cannot be tested in a vacuum environment. Therefore, it is greatly affected by air convection. At the same time, thermocouples are used for temperature collection. The contact between the thermocouple and the micro heat source is not completely in contact, so there is a large interface thermal resistance and additional thermal resistance. At the same time, the micro heat source and the device contact surface cannot be completely in contact, and the interface thermal resistance is also large. Therefore, there are errors that cannot be eliminated in the collection of temperature and heat transfer.

[0004] Therefore, both the non-contact measurement method and the contact measurement method in the prior art have the problem of low detection accuracy, which seriously affects the detection results. Summary of the invention

[0005] The present invention provides a thermal resistance testing method based on an integrated thin film heat source and a temperature measurement unit, which utilizes a coating process to form a metal thin film layer, and performs in-situ heating and temperature testing on a component to be tested in a vacuum environment to improve detection precision and accuracy.

[0006] A thermal resistance testing method based on an integrated thin film heat source and a temperature measurement unit, wherein a component to be tested has a first working surface and a second working surface opposite to each other, and the method comprises: forming a metal film layer on the first working surface of the component to be tested by using a coating process; The metal film layer is electrically connected to the test equipment, and the area where the component to be tested is located is evacuated; Controlling the testing device to supply power to the metal film layer so that the metal film layer heats the first working surface of the component to be tested; Adjusting the output power of the test equipment, and after each output power adjustment, calculating the resistance value of the metal film layer to obtain the temperature of the first working surface, calculating the temperature difference between the first working surface and the second working surface of the component to be tested, and calculating the heat flux of the component to be tested under different currents; The calculated heat flux at different currents and all recorded temperature differences are fitted to calculate the thermal resistance of the component to be tested.

[0007] Before electrically connecting the metal film layer to the test equipment, it also includes: The metal film layer is processed according to a preset shape.

[0008] The preset shape includes a continuous S-shape or a continuous U-shape.

[0009] In the process of electrically connecting the metal film layer to the test equipment and evacuating the area where the tested component is located, the following steps are also included: Place the component to be tested and the metal film layer into a vacuum chamber; electrically connecting a power supply structure in a test device to the metal film layer; The vacuum box is closed and evacuated.

[0010] The power supply structure includes a source meter, an output end of the source meter is electrically connected to the metal film layer through a probe, and the source meter can obtain the resistance of the metal film layer to determine the temperature value of the first working surface of the component to be tested.

[0011] In controlling the test equipment to supply power to the metal film layer so that the metal film layer heats the first working surface of the component to be tested, the method further includes: The component to be tested is placed on a constant temperature device in a vacuum box to keep the temperature of the second working surface of the component to be tested constant.

[0012] The constant temperature device comprises a water cooling table and a water pump. A cooling pipeline is arranged in the water cooling table. The water pump is connected with the cooling pipeline, and the water pump can circulate the cooling medium in the cooling pipeline.

[0013] A thermocouple is arranged in the water cooling table, and the thermocouple can be attached to the second working surface of the component to be tested to obtain the temperature of the second working surface.

[0014] The material of the metal film layer includes nickel, copper or platinum.

[0015] The thermal resistance testing method based on the integrated thin film heat source and temperature measurement unit of the present invention forms a metal film layer on the first working surface of the component to be tested by the process of magnetron sputtering, ensures the contact reliability between the metal film layer and the first working surface, and simplifies the heat transfer process. The metal film layer can be used as a resistive temperature sensor. By recording the resistance value of the metal film layer, the real-time temperature of the first working surface can be calculated. When the metal film layer is used to heat the component to be tested, accurate heat transfer can be guaranteed for the component to be tested, overcoming the problem of unreliable contact of the component to be tested in the prior art, ensuring the heating effect of the first working surface of the component to be tested, and at the same time, the component to be tested is set in a vacuum environment, which can prevent the air from taking away part of the heat and causing errors, thereby improving the test accuracy of the thermal resistance of the component to be tested. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] Hereinafter, the present invention will be described in more detail based on embodiments and with reference to the accompanying drawings.

[0017] Figure 1 It is a control flow chart of the thermal resistance test method based on the integrated thin film heat source and temperature measurement unit; Figure 2 is a fitting curve diagram of heat flux density-temperature difference of an embodiment of the present invention; Figure 3 is a schematic diagram of the shape of the metal film layer after processing according to an embodiment of the present invention; Figure 4 is a schematic diagram of another shape of the metal film layer after processing according to an embodiment of the present invention; Figure 5 is a schematic diagram of another shape of the metal film layer after processing according to an embodiment of the present invention; Figure 6 is a schematic diagram of another shape of the metal film layer after processing according to an embodiment of the present invention; Figure 7 is a temperature resistance curve diagram of a 400nm metal film layer according to an embodiment of the present invention; Figure 8 It is a structural schematic diagram of a testing device using a thermal resistance testing method based on an integrated thin film heat source and a temperature measurement unit according to an embodiment of the present invention.

[0018] In the drawings, the same reference numerals are used for the same components. The drawings are not drawn to scale. 1. Vacuum box; 2. Constant temperature equipment; 3. Probe station; 4. Measurement unit data acquisition system. DETAILED DESCRIPTION

[0019] The present invention will be further described below in conjunction with the accompanying drawings.

[0020] like Figures 1 to 8 As shown, the present invention provides a thermal resistance testing method based on an integrated thin film heat source and a temperature measurement unit, wherein the component to be tested has a first working surface and a second working surface opposite to each other, and the method comprises: A metal film layer is formed on the first working surface of the component to be tested by a coating process, so that the metal film layer is in reliable contact with the first working surface, which overcomes the problem in the prior art that the structure for heating the component to be tested and the component to be tested cannot be completely fitted together and thus has a large interface thermal resistance, thereby reducing the error, wherein the coating process is preferably a magnetron sputtering process; The metal film layer is electrically connected to the test equipment, and the area where the tested component is located is evacuated, so that the tested component and the metal film layer are in a vacuum environment, reducing the heat loss caused by air and air convection; Controlling the test equipment to supply power to the metal film layer so that the metal film layer heats the first working surface of the element to be tested, so that the temperature of the first working surface of the element to be tested increases, and a stable temperature difference is formed between the first working surface and the second working surface of the element to be tested; Adjust the output power of the test equipment to change the temperature of the first working surface of the component to be tested, thereby adjusting the temperature difference, and after each output power adjustment, record the temperature difference between the first working surface and the second working surface of the component to be tested, and calculate the heat flux of the component to be tested under different currents; The calculated heat flux under different currents and all recorded temperature differences are fitted and a heat flux density-temperature difference curve is drawn; The thermal resistance of the component to be tested is obtained according to the curve chart, and the thermal resistance test of the component to be tested is completed.

[0021] In the entire test method, a metal film layer is formed on the first working surface of the component to be tested by a magnetron sputtering process, so as to ensure the contact reliability between the metal film layer and the first working surface and simplify the heat transfer process. The metal film layer can be used as a resistive temperature sensor. By recording the resistance value of the metal film layer, the real-time temperature of the first working surface can be calculated. When the metal film layer is used to heat the component to be tested, accurate heat transfer can be ensured for the component to be tested, thus overcoming the problem of unreliable contact of the component to be tested in the prior art, ensuring the heating reliability of the first working surface of the component to be tested, and at the same time, the component to be tested is set in a vacuum environment, so as to avoid errors caused by air taking away part of the heat, thereby improving the test accuracy of the thermal resistance of the component to be tested.

[0022] Before electrically connecting the metal film layer to the test equipment, it also includes: The metal film layer is processed according to a preset shape. By processing the metal film layer, the metal film layer can change the size between the probe heads that power the metal film layer, while ensuring reliable heating of the first working surface of the element to be tested. This effectively increases the resistance of the metal film layer and ensures the heating capacity after the metal film layer is energized.

[0023] Preferably, Figures 3 to 6 As shown, the preset shape includes a continuous S-shape or a continuous U-shape, and the probe heads for powering the metal film layer are respectively located at both ends of the continuous S-shape or the two ends of the continuous U-shape. At this time, the metal film layer can still be evenly covered on the first working surface, and the connecting path between the probe heads can be increased as much as possible, that is, the resistance of the metal film layer can also be increased as much as possible at this time, thereby ensuring the heating capacity of the metal film layer and the uniformity of heating of the first working surface.

[0024] The thickness of the metal film layer ranges from 200 nm to 1200 nm. Preferably, the thickness of the metal film layer is 400 nm. Figure 7 It can be seen that the temperature resistance linearity of the 400nm metal film layer in the entire temperature range of 20-200℃ is good, and the temperature resistance coefficient TCR reaches 3.38×10 -3 / ℃, with good temperature sensing performance.

[0025] Magnetron sputtering thin film deposition technology belongs to physical vapor deposition (PVD). This method can be used to deposit a variety of materials including metals, semiconductors, ceramics, etc. It has the advantages of simple equipment, easy control, large coating area and good density. The thin film prepared by magnetron sputtering generally has good bonding with the substrate, but if the substrate is not fully cleaned, it will affect the adhesion between the film and the substrate during sputtering, which will cause the film to fall off and the preparation to fail. Therefore, the substrate needs to be fully cleaned before thin film deposition. The substrate is placed in deionized water, anhydrous ethanol and acetone in sequence for full ultrasonic cleaning. The single cleaning time is not less than 15 minutes. Finally, deionized water is used to clean off the residual cleaning agent that may exist on the surface of the substrate. After cleaning, it is placed in a drying oven for 15 minutes. Then the substrate is fixed on the sputtering substrate and prepared for subsequent sputtering operations. Magnetron sputtering can be used to obtain metal films with higher density. Their physical properties are closer to those of bulk metal materials, and their temperature sensing performance is even better. Compared with other thin film preparation processes, magnetron sputtering has good film density and a wide range of film thickness, from hundreds of nanometers to tens of microns. At the same time, the film formation rate and quality are highly controllable and have good repeatability, which is conducive to the preparation of metal film layers with performance consistent with that of thermoelectric devices.

[0026] The process of electrically connecting the metal film layer to the test equipment and evacuating the area where the tested component is located includes: Put the component to be tested and the metal film layer into a vacuum box 1; electrically connecting a power supply structure in a test device to the metal film layer; The vacuum box 1 is closed and evacuated.

[0027] The power supply structure is connected to the metal film layer, and the metal film layer is powered. Since the metal film layer is made of patterned metal material, the metal film layer can conduct electricity and has a certain resistance. When the metal film layer is energized, it can generate heat, thereby achieving the purpose of heating the first working surface. At the same time, since the metal film layer is evenly deposited on the first working surface, the heat transfer effect, heating effect and heating uniformity of the first working surface can be guaranteed, thereby effectively improving the test accuracy.

[0028] Furthermore, the test equipment includes a source meter, the output end of which is electrically connected to the metal film layer through a probe, and the source meter can obtain the resistance of the metal film layer to determine the temperature value of the first working surface of the component to be tested. The source meter can provide a highly stable DC power supply to the metal film layer, thereby ensuring the stability of the heating of the first working surface by the metal film layer, ensuring the accuracy of the collected temperature difference, and improving the measurement accuracy of the thermal resistance of the component to be tested. For example, the source meter can be a KEITHLEY2400 source meter.

[0029] In controlling the test equipment to supply power to the metal film layer so that the metal film layer heats the first working surface of the component to be tested, the method further includes: The component to be tested is placed on the constant temperature device 2 to keep the temperature of the second working surface of the component to be tested constant. The constant temperature device 2 is used to facilitate the arrangement of the component to be tested. The constant temperature device 2 can also be used to control the temperature of the second working surface, so that the temperature difference between the first working surface and the second working surface of the component to be tested can be quickly established and stabilized, thereby improving the test efficiency. At the same time, it can also prevent the constant temperature device 2 from quickly dissipating the heat of the component to be tested and affecting the establishment of the temperature difference. For example, the temperature that the constant temperature device 2 can provide is 25°C, and the temperature of the second working surface of the component to be tested is also 25°C. At this time, when the metal film layer is energized, the temperature of the metal film layer gradually increases. When the metal film layer reaches the set voltage, the temperature of the metal film layer also reaches a stable value, and a stable temperature difference can be formed between the first working surface and the second working surface. Then, the voltage of the metal film layer is changed, thereby changing the temperature of the metal film layer, and another stable temperature difference can be formed between the first working surface and the second working surface. When the temperature of the metal film layer is too high, although the constant temperature device 2 cools the second working surface, the temperature of the second working surface will still increase, and a stable temperature difference can still be formed between the first working surface and the second working surface, so that the thermal resistance of the component to be tested can be fitted to ensure the detection reliability of the thermal resistance of the component to be tested.

[0030] Specifically, the constant temperature device 2 includes a water cooling table and a water pump. A cooling pipeline is provided in the water cooling table. The water pump is connected to the cooling pipeline, and the water pump can circulate the cooling medium in the cooling pipeline. The water pump is used to circulate the cooling medium in the water cooling table, thereby ensuring the constant temperature effect of the water cooling table, avoiding the heat dissipation process of the water cooling table on the test element, and ensuring that the temperature difference is reliably formed.

[0031] The water cooling table is provided with a thermocouple, which can be attached to the second working surface of the component to be tested to obtain the temperature of the second working surface. By providing the thermocouple, the temperature of the second working surface can be directly and reliably detected. Since the area where the component to be tested is located is a vacuum environment, the thermocouple at this time can be determined to be perfectly attached to the second working surface, thereby ensuring the detection accuracy of the temperature of the second working surface.

[0032] Optionally, the material of the metal film layer includes nickel, copper or platinum, so that the metal film layer can be deposited by a coating process and can also form a certain resistance to achieve the purpose of heat generation. Example

[0033] Design and manufacture the test equipment, which consists of a vacuum box 1 and a top cover, a probe station 3, a copper water cooling station and an external circulating cooling water system, equipped with four wires for connecting the equipment, two cooling water pipes and a barometer for testing the real-time air pressure inside the vacuum box 1, and a box of absorbent gel is placed to keep the box dry.

[0034] The vacuum box 1 is made of 2.0 cm thick acrylic board, and the overall size is 220 mm × 220 mm × 110 mm, ensuring that each component to be tested, as well as the water cooling table and the probe station 3 can be placed in the vacuum box 1. Use sealant to seal the gap of the vacuum box 1 to ensure air tightness. A detachable glass observation window is provided in the center of the top cover of the vacuum box 1 to facilitate observation of the specific conditions of the components to be tested during the test. The vacuum box 1 is preset with through holes, one of which is used to install a barometer to monitor the changes in the internal air pressure of the vacuum box 1, and the other two through holes are used to connect a vacuum pump for vacuuming and exhausting. The vacuum box 1 is also provided with an installation hole for the flow of cooling medium of the water cooling table and a wire installation port for connecting to the probe station 3, thermocouples and components to be tested, so as to facilitate the electrical connection of external test instruments with the corresponding structures in the vacuum box 1.

[0035] The overall thickness of the water-cooling table is 9.5 mm, and the overall size is 20 mm × 20 mm × 9.5 mm. The external water pipe is a PU plastic pipe with a diameter of 4 mm. In the actual test process, silicone grease is evenly applied on the water-cooling table to reduce the contact thermal resistance between the second working surface of the device to be tested and the surface of the water-cooling table. The water-cooling table is connected to the cooling water system through a cooling water pipe. A small water pump is used to control the constant temperature of the water-cooling table and the lower surface of the device by controlling the continuous flow of cooling water. The water pump uses a peristaltic pump with a maximum flow rate of 60 mL / min. At the same time, the thermocouple is connected to the inside of the vacuum box 1, a microgroove is made on the surface of the water-cooling table, and the micro thermocouple is placed in the microgroove to assist in temperature signal acquisition. The strength, cooling capacity and temperature uniformity of the water-cooling table have been verified. During the operation of the component to be tested, the temperature of all cooling areas of the water-cooling table can be controlled within the range of 28 ± 5 ° C. At the same time, the inlet temperature of the water-cooling table can be reduced by adding ice-water mixture to the water tank and increasing the concentration of brine to meet the experimental requirements.

[0036] The probe station 3 uses a tungsten needle three-axis probe station 3 of model GCM-5313M, with an overall size of 130mm×60mm×70mm, which is mainly used to conduct the metal film layer integrated on the upper surface of the device (hereinafter referred to as the measurement unit). Since the overall size of the component to be tested is small, the overall size of the measurement unit is also small. Therefore, the probe fixed on the probe station 3 inside the vacuum box 1 is used for electrical connection to monitor the resistance and output power of the test unit. At the same time, based on the real-time resistance of the measurement unit, the specific temperature of the first working surface of the component to be tested is calculated. During installation, after fixing the component to be tested, first raise the z-axis, use the alignment system to gradually approach the probe head from the x-axis and y-axis, and lower the z-axis after reaching the electrode contact set on the measurement unit to drop on the electrode contact. After completing the electrical connection, use a multimeter to test the resistance of the test unit to ensure that the electrical connection is successful.

[0037] A nickel metal film (i.e., the aforementioned measuring unit) is deposited on the first working surface of the component to be tested by a coating process, and the nickel metal film is processed into a certain regular structure using laser processing technology. The measuring unit can accurately collect the temperature of the first working surface of the component to be tested, and constant-power heating of the first working surface of the component to be tested can be achieved by energizing the measuring unit.

[0038] The measurement unit data acquisition system 4 includes a paperless recorder, a KEITHLEY2400 source meter, etc. When testing the thermal resistance of the component to be tested, it is necessary to power on the measurement unit to obtain the accurate heating value of the component to be tested by the measurement unit, calculate the heat transfer density of the first working surface of the component to be tested, and combine the temperature difference between the first working surface and the second working surface of the component to be tested with the surface heat transfer density to obtain the thermal resistance of the component to be tested by fitting calculation.

[0039] Debugging process before testing: (1) Water circuit test: including water pump test, water cooling table test, cooling water insulation system test, to confirm that all components are operating normally and the interfaces are not leaking; (2) Circuit test: including the initial resistance test of the measurement unit, the heat source performance test of the measurement unit, the sensor performance test of the measurement unit, and the load test of the component to be tested. It is necessary to confirm that all components are working properly and the circuit is conducting well; (3) Air tightness test: including vacuum pump test, barometer test, and air tightness test of vacuum box 1. It is necessary to confirm that the air tightness of vacuum box 1 is good and that the vacuum pump and vacuum gauge can work normally.

[0040] Formal test steps: a. Start the experimental system (1) Correctly install the components and systems to be tested; (2) Turn on each test instrument and ensure that it is working properly; (3) Close the sealing valve of vacuum box 1, turn on the vacuum pump, and wait until the vacuum gauge reading reaches the experimental requirements. Close the valve on one side of the vacuum pump and turn off the vacuum pump to prevent the vibration of the vacuum pump from affecting the test. (4) Start the water pump and confirm that the cooling water path is unobstructed; b. Thermal resistance test of the component to be tested (5) Connect the measurement unit to a 2400 heating performance test source meter, turn on the source meter constant voltage output mode, and record the current at the same time; (6) gradually changing the heating power of the measuring unit, calculating the temperature of the measuring unit at this time, and recording the specific temperature when the temperature difference between the first working surface and the second working surface of the component to be tested is stable; (7) The thermal resistance of the component to be tested is obtained through calculation and fitting, and this set of experiments is completed.

[0041] To ensure the reliability of the experimental data, three sets of repeated experiments were performed to ensure stable results, and then the experiment was repeated again in step (6).

[0042] Shut down the experimental system (8) Turn off all test instruments connected to the experimental system; (9) After the temperature stabilizes, turn off the water pump and open the sealed valve of vacuum box 1 until the vacuum gauge reading returns to zero; (10) First, lift the probe station 3z axis, then move the x-axis and y-axis, remove the integrated body of the measurement unit and the component to be tested, and end the experiment.

[0043] The fitting results are as follows Figure 2 As shown, we can see that the curve R 2 =0.997, the linearity is good, and the thermal resistance R of the component to be tested is calculated at the same time. th =ΔT / q, and the thermal resistance R of the component to be tested is obtained th =0.00181(K·m 2 ) -1 .

[0044] Although the present invention has been described with reference to preferred embodiments, various modifications may be made thereto and parts thereof may be replaced by equivalents without departing from the scope of the present invention. In particular, the various technical features mentioned in the various embodiments may be combined in any manner as long as there are no structural conflicts. The present invention is not limited to the specific embodiments disclosed herein, but includes all technical solutions falling within the scope of the claims.

Claims

1. A thermal resistance test method based on an integrated thin film heat source and a temperature measurement unit, characterized in that: The component to be tested has a first working surface and a second working surface opposite to each other, and the method comprises: forming a metal film layer on the first working surface of the component to be tested by using a coating process; The metal film layer is electrically connected to the test equipment, and the area where the component to be tested is located is evacuated; Controlling the testing device to supply power to the metal film layer so that the metal film layer heats the first working surface of the component to be tested; Adjusting the output power of the test equipment, and recording the temperature difference between the first working surface and the second working surface of the component to be tested after each output power adjustment, and calculating the heat flux of the component to be tested under different currents; The calculated heat flux at different currents and all recorded temperature differences are fitted to calculate the thermal resistance of the component to be tested.

2. The thermal resistance testing method based on the integrated thin film heat source and temperature measurement unit according to claim 1, characterized in that: Before electrically connecting the metal film layer to the test equipment, it also includes: The metal film layer is processed according to a preset shape.

3. The thermal resistance testing method based on the integrated thin film heat source and temperature measurement unit according to claim 2, characterized in that: The preset shape includes a continuous S-shape or a continuous U-shape.

4. The thermal resistance testing method based on the integrated thin film heat source and temperature measurement unit according to claim 1, characterized in that: The process of electrically connecting the metal film layer to the test equipment and evacuating the area where the tested component is located includes: Place the component to be tested and the metal film layer into a vacuum chamber; electrically connecting a power supply structure in a test device to the metal film layer; The vacuum box is closed and evacuated.

5. The thermal resistance testing method based on the integrated thin film heat source and temperature measurement unit according to claim 4, characterized in that: The test equipment comprises a source meter, an output end of the source meter is electrically connected to the metal film layer through a probe, and the source meter can obtain the resistance of the metal film layer to calculate and determine the temperature value of the first working surface.

6. The thermal resistance testing method based on the integrated thin film heat source and temperature measurement unit according to claim 1, characterized in that: In controlling the test equipment to supply power to the metal film layer so that the metal film layer heats the first working surface of the component to be tested, the method further includes: The component to be tested is placed on a constant temperature device to keep the temperature of the second working surface of the component to be tested constant.

7. The thermal resistance testing method based on the integrated thin film heat source and temperature measurement unit according to claim 6, characterized in that: The constant temperature device comprises a water cooling table and a water pump. A cooling pipeline is arranged in the water cooling table. The water pump is connected with the cooling pipeline, and the water pump can circulate the cooling medium in the cooling pipeline.

8. The thermal resistance testing method based on the integrated thin film heat source and temperature measurement unit according to claim 7, characterized in that: The water cooling table is provided with a thermocouple, and the thermocouple can be attached to the second working surface of the component to be tested to obtain the temperature of the second working surface.

9. The thermal resistance testing method based on the integrated thin film heat source and temperature measurement unit according to claim 1, characterized in that: The material of the metal film layer includes nickel, copper or platinum.

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