Calibration method and device of wafer detection equipment, medium and wafer detection method

Abstract

The invention provides a wafer detection equipment calibration method, a wafer detection equipment calibration device, a medium and a wafer detection method. The calibration method comprises the following steps: detecting a set mark on the surface of a wafer through optical detection equipment to obtain a first detection position of the set mark; detecting the set mark through electron beam detection equipment to obtain a second detection position of the set mark; and calibrating coordinate systems of the optical detection equipment and the electron beam detection equipment based on the first detection position and the second detection position.

Description

Technical Field

[0001] The present disclosure relates to the field of semiconductor detection technology, and in particular to a calibration method, device and medium for wafer detection equipment, and a wafer detection method. Background Art

[0002] In the semiconductor manufacturing process, it is inevitable that unexpected defects will appear on the wafer surface, thereby reducing the quality of the wafer. Therefore, detecting wafer surface defects is an important step in the semiconductor manufacturing process and after the manufacturing is completed.

[0003] In the related scheme, the defect detection strategy is a two-step process. In the first process, the entire area of ​​the wafer surface is measured using bright field or optical inspection equipment to mark possible defects and form a coordinate file of the marked possible defects. In the second process, the inspection equipment is used to check all the marked possible defects according to the coordinate file to finally confirm whether each marked possible defect is a real defect and determine the defect type. In the second process, electron beam inspection equipment is usually used to confirm whether it is a defect and determine the defect type.

[0004] During the two-step process of executing the relevant scheme, there will be a mismatch in the coordinate systems between the optical inspection equipment and the electron beam inspection equipment, resulting in the electron beam inspection equipment being unable to detect the marked possible defects at the coordinates of some of the marked possible defects in the file when inspecting according to the coordinates recorded in the coordinate file, resulting in missed inspections. Summary of the invention

[0005] The present disclosure provides a calibration method, device and medium for wafer detection equipment, and a wafer detection method; the coordinate system between an optical detection equipment and an electron beam detection equipment is calibrated to avoid missed detection.

[0006] The technical solution of the present disclosure is achieved as follows: In a first aspect, the present disclosure provides a calibration method for a wafer inspection device, the calibration method comprising: Detecting a set mark on the surface of the wafer by an optical detection device to obtain a first detection position of the set mark; Detecting the set mark by an electron beam detection device to obtain a second detection position of the set mark; The coordinate systems of the optical detection device and the electron beam detection device are calibrated based on the first detection position and the second detection position.

[0007] In a second aspect, the present disclosure provides a calibration device for a wafer detection device, the calibration device comprising: a first detection unit, a second detection unit and a calibration unit; wherein, A first detection unit is configured to detect a set mark on the surface of the wafer through an optical detection device to obtain a first detection position of the set mark; A second detection unit is configured to detect the set mark by an electron beam detection device to obtain a second detection position of the set mark; The calibration section is configured to calibrate the coordinate systems of the optical detection device and the electron beam detection device based on the reference position, the first detection position, and the second detection position of the setting mark.

[0008] In a third aspect, the present disclosure provides a computing device, comprising a processor and a memory; the processor is used to execute instructions stored in the memory to implement the calibration method of the wafer inspection equipment as described in the first aspect.

[0009] In a fourth aspect, the present disclosure provides a computer-readable storage medium storing at least one instruction, wherein the at least one instruction is used to be executed by a processor to implement the calibration method of the wafer detection equipment as described in the first aspect.

[0010] In a fifth aspect, the present disclosure provides a wafer detection method, the method comprising: When it is determined that the wafer to be tested needs to be inspected for defects by an electron beam inspection device, the optical inspection device and the electron beam inspection device are calibrated using the wafer to be tested through the calibration method of the wafer inspection device described in the first aspect; Use calibrated optical inspection equipment and electron beam inspection equipment to perform defect inspection on the wafers to be tested.

[0011] The present disclosure provides a calibration method, device and medium for wafer detection equipment, and a wafer detection method; after setting a setting mark used as a calibration reference, the setting mark is detected by an optical detection device and an electron beam detection device respectively. The optical detection device and the electron beam detection device are used to calibrate the coordinate system of the optical detection device and the electron beam detection device respectively according to the detection position detected by the setting mark, thereby eliminating the difference between the coordinate systems of the optical detection device and the electron beam detection device, avoiding the occurrence of missed detection, and improving the accuracy of defect detection. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] Figure 1 Schematic diagram of the process of wafer inspection for related solutions.

[0013] Figure 2 This is a diagram of abnormal distribution on the surface of a wafer W detected by a laser particle counter provided by the present disclosure.

[0014] Figure 3(A) is a schematic diagram of a detection result obtained by a scanning electron microscope (SEM) provided in the present disclosure.

[0015] Figure 3 (B) is another schematic diagram of detection results by SEM provided by the present disclosure.

[0016] Figure 4 A schematic flow chart of a calibration method for a wafer inspection device provided in the present invention.

[0017] Figure 5 A schematic diagram of the shape and position of a setting mark provided in the present disclosure.

[0018] Figure 6 A schematic diagram of dividing the candidate areas with the reference position O as the center provided by the present disclosure.

[0019] Figure 7 A calibration diagram for a cross-shaped mark provided in the present disclosure.

[0020] Figure 8 A schematic diagram of a wafer inspection method provided in the present invention.

[0021] Fig. 9 A schematic diagram of the composition of a calibration device for a wafer inspection device provided in the present invention.

[0022] Fig.10 A schematic diagram of the structure of a computing device provided by the present disclosure. DETAILED DESCRIPTION

[0023] The technical solutions in the present disclosure will be described clearly and completely below in conjunction with the accompanying drawings in the present disclosure.

[0024] See also Figure 1 , which shows the general process of the relevant scheme for wafer inspection during the wafer manufacturing process, which may include: S11: Use optical inspection equipment to inspect the wafer surface and obtain defects on the wafer surface and coordinate information of the defects.

[0025] Specifically, taking a laser particle scanner (Particle counter) as an example, the Particle counter is used to detect abnormal distribution conditions on the wafer surface, and an abnormality detection file, such as a file in the klarf format, is generated based on the detected abnormalities and information such as position and size of each abnormality.

[0026] S12: When it is determined that a partial abnormality needs to be confirmed based on the abnormality on the wafer surface detected by the optical detection equipment, an electron beam detection equipment is used to detect the partial abnormality based on the abnormality on the wafer surface and the coordinate information of the abnormality to determine whether the partial abnormality is a defect.

[0027] Specifically, after being inspected by optical inspection equipment, the abnormal distribution of the wafer surface can be obtained, and based on the distribution of the abnormalities, it is determined whether there are some abnormalities that need to be confirmed by electron beam inspection equipment, such as a scanning electron microscope (SEM). If not, the wafer can be subjected to other subsequent inspection processes. If necessary, the aforementioned klarf file is transferred to the SEM, so that the SEM confirms the partial abnormality based on the coordinate information about the partial abnormality in the klarf file.

[0028] During the SEM confirmation process, due to the difference between the coordinate system of the particle counter and the SEM, the SEM will be unable to capture the corresponding abnormality for confirmation when confirming the abnormality based on the coordinate information of the klarf file. Figure 2 The abnormal distribution diagram of the wafer W surface detected by the particle counter is shown in the figure. These detected abnormalities are represented by solid squares in the figure. Figure 2 The circled point is an exemplary anomaly detected by the particle counter. The coordinate information of the anomaly can be saved in the klarf file generated by the particle counter. Figure 2 The coordinate information of all detected anomalies is saved in the klarf file.

[0029] When the circled anomaly needs to be confirmed by SEM, the SEM device captures the anomaly and detects it according to the coordinate information of the anomaly recorded in the klarf file. When the SEM captures the anomaly, the result of the SEM detection is as follows: Figure 3 (A) shows that from Figure 3 (A) It can be seen that the anomaly is a linear defect. Due to the difference between the coordinate system of the particle counter and the SEM, it will lead to the probability that the SEM cannot capture the anomaly. The test results are as follows: Figure 3 (B) Because Figure 3 In (B), there is no morphological image of the defect, so the SEM will judge that there is no defect at the abnormal location, resulting in missed detection of the defect.

[0030] In order to avoid the above-mentioned missed detection, the present disclosure hopes to eliminate the difference between the coordinate systems of the particle counter and the SEM by calibration. Figure 4 As shown, the present disclosure provides a calibration method for a wafer detection device, and the calibration method includes steps S401 to S403.

[0031] In step S401, a set mark on the surface of a wafer is detected by an optical detection device to obtain a first detection position of the set mark.

[0032] In the present disclosure, in order to calibrate the coordinate system of an optical detection device, such as a particle counter, and an electron beam detection device, such as a SEM, both the optical detection device and the electron beam detection device can be used to detect a reference object and calibrate using the respectively detected position information.

[0033] It should be noted that the reference object may be a set mark on the wafer surface, and the shape of the mark should be significantly distinguished from the defect morphology of the wafer surface to avoid misjudging the mark as an abnormality or defect on the wafer surface during the calibration process. In some examples, the process of setting the mark may include: providing a wafer; Processing a set mark on the wafer surface by laser; Measure the reference position of the setting mark.

[0034] For the above example, specifically, a cross-shaped mark with a size of 150 nm×150 nm can be processed on the wafer surface by a 265 nm laser, such as Figure 5 The enlarged display image of the area circled in the middle ellipse is shown. The size of the mark can be appropriately set according to the actual application scenario. If the size is set too large, it will lead to a large calibration error and fail to meet the inspection requirements for nanometer-level accuracy in wafer inspection. If the size is set too small, the conditions required for the lenses of each device during the implementation of the calibration scheme will be too high, resulting in a large waste of resources. In addition, in order to avoid the large surface area required for semiconductor manufacturing on the wafer surface, such as Figure 5 As shown, the mark can be processed near the notch of the wafer W to avoid using too much area of ​​the wafer surface that is processed by the manufacturing process during the calibration process.

[0035] After the setting mark is processed, the reference position of the mark can be measured by an optical microscope. It should be noted that the reference position can be used as a "standard" for subsequent calibration.

[0036] In the present disclosure, an optical detection device, such as a particle counter, detects the complete surface of a wafer with a set mark, and is capable of detecting anomalies on the wafer surface and the distribution of these anomalies. Among all the detected anomalies, the anomaly corresponding to the set mark can be determined according to the shape of the set mark, and the detection position of the anomaly corresponding to the set mark on the wafer surface, that is, the first detection position, can be obtained according to the distribution of the anomaly. It can be understood that the anomaly corresponding to the above-mentioned set mark and its first detection position on the wafer surface are saved in a file in the klarf format.

[0037] It should be noted that the first detection position is obtained based on the optical detection device's own coordinate system detection, and therefore can reflect the properties of the optical detection device's own coordinate system. When the properties of the optical detection device's own coordinate system differ from the properties of the coordinate systems of other devices used in the present disclosure, that is, the consistency is poor, then the first detection position will deviate from the detection position of the set mark detected by other devices.

[0038] In step S402, the set mark is detected by an electron beam detection device to obtain a second detection position of the set mark.

[0039] In the present disclosure, for the wafer provided with the set mark as mentioned above, the set mark can also be detected by an electron beam detection device, such as SEM, and the detection position of the set mark, that is, the second detection position, can be obtained. It can be understood that the second detection position also reflects the electron beam detection device. When the properties of the coordinate system of the electron beam detection device itself differ from the properties of the coordinate system of other devices used in the present disclosure, that is, the consistency is poor, then the second detection position will deviate from the detection position of the set mark detected by other devices.

[0040] In step S403 , the coordinate systems of the optical detection device and the electron beam detection device are calibrated based on the first detection position and the second detection position.

[0041] In the present disclosure, since the first detection position and the second detection position respectively reflect the properties of the coordinate systems of the optical detection device and the electron beam detection device, when there is a large difference between the properties of the two, that is, the consistency is poor, a large deviation will appear between the first detection position and the second detection position. After the deviation is specifically quantified, the coordinate systems of the optical detection device and the electron beam detection device can be calibrated according to the deviation, thereby reducing the difference between the properties of the coordinate systems of the optical detection device and the electron beam detection device, improving consistency, and avoiding missed detection.

[0042] Regarding the aforementioned Figure 4According to the technical solution shown in the figure, after a setting mark is set as a calibration reference, the setting mark is detected by an optical detection device and an electron beam detection device respectively. The detection positions of the setting mark are detected by the optical detection device and the electron beam detection device respectively to calibrate the coordinate systems of the optical detection device and the electron beam detection device, thereby eliminating the difference between the coordinate systems of the optical detection device and the electron beam detection device, avoiding the occurrence of missed detection, and improving the accuracy of defect detection.

[0043] for Figure 4 In the technical solution shown in FIG. 1 , in some examples, the step S401 of detecting the set mark on the surface of the wafer by an optical detection device to obtain a first detection position of the set mark includes: The wafer surface is inspected by an optical inspection device to obtain the inspection position corresponding to the abnormality on the wafer surface; Based on the reference position and shape of the set mark, an abnormality that matches the set mark is selected from the abnormalities on the wafer surface, and a first detection position corresponding to the abnormality that matches the set mark is obtained.

[0044] In the present disclosure, taking Particle Counter as an example, Particle Counter can detect abnormalities on the entire surface of the wafer, thereby obtaining the distribution of surface abnormalities. The abnormal distribution is stored in the klarf file and includes the detection position of each detected surface abnormality. Of course, the abnormal position corresponding to the set mark is also included in the above klarf file. Usually, the distribution of surface abnormalities included in the klarf file can be obtained by Figure 2 The distribution diagram shown is presented.

[0045] In the klarf file, the reference position of the set mark can be used to select the anomaly that meets the set mark from the surface anomaly, and obtain the detection position of the anomaly that meets the set mark, that is, the first detection position. Specifically, the deviation of the coordinate system is not a large value, usually hundreds of nanometers. Based on this, in the anomaly distribution map represented by the klarf file, such as Figure 6 As shown, with the reference position O as the center, a candidate area is divided according to the maximum range of the possible deviation, such as the rectangle shown in the dotted box. Of course, the candidate area can also be divided into other shapes according to the specific implementation scenario, such as circle, ellipse, triangle, etc. Figure 6 The shape of the anomaly (as shown by the solid square in the figure) is compared with the shape of the set mark, and the anomaly that is consistent with the shape of the set mark is determined as the anomaly that meets the set mark, and the detection position corresponding to the anomaly that meets the set mark is found from the klarf file, that is, the first detection position.

[0046] for Figure 4 In some possible implementations of the technical solution shown in FIG. 1 , the step S402 of detecting the set mark by an electron beam detection device to obtain a second detection position of the set mark includes: Inspecting the wafer surface within a set inspection area based on a reference position or a first inspection position of a set mark; According to the shape of the set mark, a defect that meets the set mark is determined from the detected defects, and a second detection position corresponding to the defect that meets the set mark is obtained.

[0047] In the present disclosure, taking SEM as an example, SEM can only complete abnormality detection at one position each time, and the detection consumes a long time, so SEM cannot detect the entire surface of the wafer, but only detects defects at some positions. In some examples, SEM can detect the abnormalities that need to be confirmed according to the coordinate information of the abnormalities recorded in the klarf file.

[0048] Also considering that the deviation of the coordinate system is not a large value, in some examples, it can be based on the reference position according to Figure 6 The candidate area is determined in the manner shown, and each anomaly in the candidate area is defect-confirmed by SEM. During the defect confirmation process, when an anomaly matching the shape of the set mark is found in the candidate area, SEM records the detection position corresponding to the defect that meets the set mark, that is, the second detection position.

[0049] In the present disclosure, since the coordinate system deviation between the optical detection device and the electron beam detection device is also not a large value. Based on this, in some examples, it is also possible to Figure 6 The candidate area is determined in the manner shown, and each anomaly in the candidate area is defect-confirmed by SEM. During the defect confirmation process, when an anomaly matching the shape of the set mark is found in the candidate area, SEM records the detection position corresponding to the defect that meets the set mark, that is, the second detection position.

[0050] for Figure 4 In some possible implementations of the technical solution shown in FIG. 1 , the step S403 of calibrating the coordinate systems of the optical detection device and the electron beam detection device based on the first detection position and the second detection position includes: The coordinate system of the electron beam detection device is calibrated according to the difference between the first detection position and the second detection position, so that the coordinate system of the electron beam detection device matches the coordinate system of the optical detection device.

[0051] For the above implementation, after obtaining the detection positions (i.e., the first detection position and the second detection position) detected by the optical detection device and the electron beam detection device for the same set mark, the deviation of the coordinate system of the electron beam detection device compared with the optical detection device can be calibrated according to the difference between the first detection position and the second detection position. Figure 7 As shown, for a cross-shaped mark, the first detection position is as follows Figure 7 Take the solid line mark in as an example, the second detection position is Figure 7 Taking the dotted mark in the figure as an example, the difference between the first detection position and the second detection position is 73nm. That is to say, when SEM uses the klarf file for defect confirmation, it needs to subtract 73nm from the coordinate information of each abnormality in the klarf file before detection, so that the coordinate system of the electron beam detection equipment and the optical detection equipment can be matched to avoid Figure 3 (A) and (B) show missed detections.

[0052] for Figure 4 The technical solution shown can also be used as a "standard" reference position for calibration. In some possible implementations, the coordinate system of the optical detection device and the electron beam detection device is calibrated based on the first detection position and the second detection position in step S403, including: Acquire a first calibration value of the electron beam detection device according to the reference position of the set mark and the first detection position; Acquire a second calibration value of the electron beam detection device according to the reference position and the second detection position of the set mark; The coordinate systems of the optical detection device and the electron beam detection device are calibrated to a matching state based on the first calibration value and the second calibration value, respectively.

[0053] For the above implementation, after obtaining the detection positions (i.e., the first detection position and the second detection position) detected by the optical detection device and the electron beam detection device for the same set mark, the largest difference between the first detection position and the second detection position and the reference position of the set mark can be obtained. Specifically, for the first difference corresponding to the optical detection device, i.e., the first calibration value, it can be calibrated so that the coordinate system of the optical detection device matches the reference position. For the second difference corresponding to the electron beam detection device, and the second calibration value, it can be calibrated so that the coordinate system of the electron beam detection device matches the reference position. It can be understood that when the optical detection device and the electron beam detection device are calibrated based on the same reference position, the coordinate systems of the optical detection device and the electron beam detection device are also in a matching state corresponding to the reference position, that is, the optical detection device and the electron beam detection device have completed the calibration.

[0054] Based on the above technical solution, the present disclosure also provides a wafer inspection method, which can be executed by a manufacturing execution system (MES), see Figure 8 , the method comprising: S801: When it is determined that the wafer to be tested needs to be inspected for defects by an electron beam inspection device, a set mark is processed on the surface of the wafer by laser, and a reference position of the set mark is measured.

[0055] In the present disclosure, a cross-shaped mark with a size of 150 nm×150 nm is processed on the surface of the wafer by a 265 nm laser, and the mark is used as a setting mark, such as Figure 5 The enlarged image of the area circled in the middle is shown. The reference position of the mark is measured by optical microscopy.

[0056] S802: Detect the set mark on the surface of the wafer by using an optical detection device to obtain a first detection position of the set mark.

[0057] S803: Detect the set mark by using an electron beam detection device to obtain a second detection position of the set mark.

[0058] S804: Calibrate the coordinate systems of the optical detection device and the electron beam detection device based on the first detection position and the second detection position.

[0059] In the present disclosure, in combination with the aforementioned Figure 4 The technical solution shown in the figure, MES is implemented in Figure 7 In the process of the wafer inspection method shown in FIG. 1 , when it is determined that the wafer to be tested needs to be inspected for defects by an electron beam inspection device, steps S801 to S804 are executed as described above. Figure 4 The steps in the calibration method of the wafer detection equipment shown in FIG. The specific implementation means and methods are the same as those described above. Figure 4 The technical solutions shown are the same and will not be described in detail in this disclosure.

[0060] S805: Perform defect detection on the wafer to be tested using the calibrated optical detection equipment and electron beam detection equipment.

[0061] It should be noted that after the calibration is completed through the above steps S801 to S804, the optical detection device transmits the klarf file used to represent the abnormal distribution to the electron beam detection device. The electron beam detection device can confirm each abnormality by reading the coordinate information of each abnormality in the klarf file and combining it with the calibration result obtained after the calibration is completed, thereby avoiding Figure 3 The situations represented by (A) and (B) in the figure cannot be captured, which avoids the occurrence of missed detection and improves the accuracy of defect detection.

[0062] Based on the same inventive concept as the above technical solution, see Fig. 9 , which shows a calibration device 90 of a wafer detection device provided by the present disclosure, comprising: a first detection unit 901, a second detection unit 902 and a calibration unit 903; wherein, The first detection unit 901 is configured to detect the set mark on the surface of the wafer through an optical detection device to obtain a first detection position of the set mark; The second detection unit 902 is configured to detect the set mark by an electron beam detection device to obtain a second detection position of the set mark; The calibration unit 903 is configured to calibrate the coordinate systems of the optical detection device and the electron beam detection device based on the reference position of the setting mark, the first detection position, and the second detection position.

[0063] In some examples, the first detection unit 901 is configured to: Detecting the surface of the wafer by using an optical detection device to obtain a detection position corresponding to an abnormality on the surface of the wafer; Based on the reference position of the set mark, an abnormality that matches the set mark is selected from the abnormalities on the wafer surface, and a detection position corresponding to the abnormality that matches the set mark is obtained.

[0064] In some examples, the first detection unit 901 is configured to: Detecting the surface of the wafer by using an optical detection device to obtain a detection position corresponding to an abnormality on the surface of the wafer; Based on the shape of the set mark, an abnormality that matches the set mark is selected from the abnormalities on the surface of the wafer, and a detection position corresponding to the abnormality that matches the set mark is obtained.

[0065] In some examples, the second detection unit 902′ is configured to: Detecting the wafer surface within a set detection area based on the reference position of the set mark; According to the shape of the set mark, a defect that meets the set mark is determined from the detected defects, and a detection position corresponding to the defect that meets the set mark is obtained.

[0066] In some examples, the calibration unit 903′ is configured to: The coordinate system of the electron beam detection device is calibrated according to the difference between the first detection position and the second detection position, so that the coordinate system of the electron beam detection device matches the coordinate system of the optical detection device.

[0067] In some examples, the calibration unit 903′ is configured to: Acquire a first calibration value of the electron beam detection device according to the reference position of the set mark and the first detection position; Acquire a second calibration value of the electron beam detection device according to the reference position and the second detection position; The coordinate systems of the optical detection device and the electron beam detection device are calibrated to a matching state based on the first calibration value and the second calibration value, respectively.

[0068] Please refer to Fig.10 , which shows a structural block diagram of a computing device provided by an exemplary embodiment of the present disclosure. In some examples, the computing device 100 may be at least one of a smart phone, a smart watch, a desktop computer, a laptop, a virtual reality terminal, an augmented reality terminal, a wireless terminal, and a laptop portable computer. The computing device 100 has a communication function and can access a wired network or a wireless network. The computing device 100 may generally refer to one of a plurality of terminals, and those skilled in the art may know that the number of the above terminals may be more or less. In some examples, the computing device 100 may receive data based on the wired network or wireless network to which it is connected. It can be understood that the computing device 100 undertakes the calculation and processing work of the technical solution of the present disclosure, and the present disclosure does not limit this.

[0069] like Fig.10 As shown, the computing device in the present disclosure may include one or more of the following components: a processor 1010 and a memory 1020 .

[0070] Optionally, the processor 1010 uses various interfaces and lines to connect various parts within the entire computing device, and executes various functions of the computing device and processes data by running or executing instructions, programs, code sets or instruction sets stored in the memory 1020, and calling data stored in the memory 1020. Optionally, the processor 1010 can be implemented in at least one hardware form of digital signal processing (DSP), field-programmable gate array (FPGA), and programmable logic array (PLA). The processor 1010 can integrate one or a combination of a central processing unit (CPU), a graphics processing unit (GPU), a neural network processor (NPU), and a baseband chip. Among them, the CPU mainly processes the operating system, user interface, and application programs; the GPU is responsible for rendering and drawing the content that needs to be displayed on the touch display; the NPU is used to implement artificial intelligence (AI) functions; and the baseband chip is used to process wireless communications. It is understandable that the above-mentioned baseband chip may not be integrated into the processor 1010, but may be implemented by a separate chip.

[0071] The memory 1020 may include a random access memory (RAM) or a read-only memory (ROM). Optionally, the memory 1020 includes a non-transitory computer-readable storage medium. The memory 1020 may be used to store instructions, programs, codes, code sets, or instruction sets. The memory 1020 may include a program storage area and a data storage area, wherein the program storage area may store instructions for implementing an operating system, instructions for at least one function (such as a touch function, a sound playback function, an image playback function, etc.), instructions for implementing the above various method embodiments, etc.; the data storage area may store data created according to the use of the computing device, etc.

[0072] In addition, those skilled in the art can understand that the structure of the computing device shown in the above drawings does not constitute a limitation on the computing device, and the computing device may include more or fewer components than shown in the figure, or combine certain components, or arrange the components differently. For example, the computing device also includes a display screen, a camera assembly, a microphone, a speaker, a radio frequency circuit, an input unit, a sensor (such as an acceleration sensor, an angular velocity sensor, a light sensor, etc.), an audio circuit, a WiFi module, a power supply, a Bluetooth module and other components, which will not be described in detail here.

[0073] The present disclosure also provides a computer-readable storage medium storing at least one instruction, wherein the at least one instruction is used to be executed by a processor to implement the calibration method of the wafer detection equipment as described in the above embodiments.

[0074] The present disclosure also provides a computer program product, which includes computer instructions stored in a computer-readable storage medium; a processor of a computing device reads the computer instructions from the computer-readable storage medium, and the processor executes the computer instructions, so that the computing device executes to implement the calibration method of the wafer detection equipment described in the above-mentioned embodiments.

[0075] Those skilled in the art should be aware that in one or more of the above examples, the functions described in the present disclosure can be implemented using hardware, software, firmware, or any combination thereof. When implemented using software, these functions can be stored in a computer-readable medium or transmitted as one or more instructions or codes on a computer-readable medium. Computer-readable media include computer storage media and communication media, wherein communication media include any media that facilitates the transmission of computer programs from one place to another. Storage media can be any available media that can be accessed by a general or special-purpose computer.

[0076] It should be noted that the technical solutions described in the present disclosure can be combined arbitrarily without conflict.

[0077] The above is only a specific embodiment of the present invention, but the protection scope of the present invention is not limited thereto. Any person skilled in the art can easily think of changes or substitutions within the technical scope disclosed by the present invention, which should be included in the protection scope of the present invention. Therefore, the protection scope of the present invention should be based on the protection scope of the claims.

Claims

1. A calibration method for a wafer inspection device, characterized in that: The calibration method comprises: Detecting a set mark on the surface of the wafer by an optical detection device to obtain a first detection position of the set mark; Detecting the set mark by an electron beam detection device to obtain a second detection position of the set mark; The coordinate systems of the optical detection device and the electron beam detection device are calibrated based on the first detection position and the second detection position.

2. The calibration method according to claim 1, characterized in that: The step of detecting the set mark on the surface of the wafer by an optical detection device to obtain a first detection position of the set mark includes: Detecting the surface of the wafer by using an optical detection device to obtain a detection position corresponding to an abnormality on the surface of the wafer; Based on the reference position and shape of the set mark, an abnormality that matches the set mark is selected from the abnormalities on the wafer surface, and a first detection position corresponding to the abnormality that matches the set mark is obtained.

3. The calibration method according to claim 1, characterized in that: The step of detecting the set mark by an electron beam detection device to obtain a second detection position of the set mark includes: Detecting the wafer surface within a set detection area based on the reference position or the first detection position of the set mark; According to the shape of the set mark, a defect that meets the set mark is determined from the detected defects, and a second detection position corresponding to the defect that meets the set mark is obtained.

4. The calibration method according to claim 1, characterized in that: The calibrating the coordinate systems of the optical detection device and the electron beam detection device based on the first detection position and the second detection position includes: The coordinate system of the electron beam detection device is calibrated according to the difference between the first detection position and the second detection position, so that the coordinate system of the electron beam detection device matches that of the optical detection device.

5. The calibration method according to claim 1, characterized in that: The calibrating the coordinate systems of the optical detection device and the electron beam detection device based on the first detection position and the second detection position includes: Acquire a first calibration value of the electron beam detection device according to the reference position of the set mark and the first detection position; Acquire a second calibration value of the electron beam detection device according to the reference position and the second detection position; The coordinate systems of the optical detection device and the electron beam detection device are calibrated to a matching state based on the first calibration value and the second calibration value, respectively.

6. The calibration method according to claim 1, characterized in that: The calibration method further comprises: providing a wafer; Processing the set mark on the surface of the wafer by laser; The reference position of the setting mark is measured.

7. A calibration device for wafer inspection equipment, characterized in that: The calibration device comprises: a first detection unit, a second detection unit and a calibration unit; wherein, A first detection unit is configured to detect a set mark on the surface of the wafer through an optical detection device to obtain a first detection position of the set mark; A second detection unit is configured to detect the set mark by an electron beam detection device to obtain a second detection position of the set mark; A calibration section is configured to calibrate the coordinate systems of the optical detection device and the electron beam detection device based on the reference position of the setting mark, the first detection position, and the second detection position.

8. A computing device, characterized in that The computing device includes a processor and a memory; the processor is used to execute instructions stored in the memory to implement the calibration method of the wafer detection equipment as described in any one of claims 1 to 6.

9. A computer-readable storage medium, characterized in that: The computer-readable storage medium stores at least one instruction, and the at least one instruction is used to be executed by a processor to implement the calibration method of the wafer detection equipment according to any one of claims 1 to 6.

10. A wafer detection method, characterized in that: The method comprises: When it is determined that the wafer to be tested needs to be inspected for defects by an electron beam inspection device, the optical inspection device and the electron beam inspection device are calibrated using the wafer to be tested by the calibration method of the wafer inspection device according to any one of claims 1 to 6; The wafer to be tested is subjected to defect detection using calibrated optical detection equipment and electron beam detection equipment.

Images