Chamfering equipment and method

Abstract

The invention relates to the field of wafer processing, in particular to chamfering equipment and method, and the equipment comprises a chamfering mechanism which is used for chamfering a wafer; the cleaning mechanism is used for cleaning the wafer; the transfer mechanism is arranged between the chamfering mechanism and the cleaning mechanism, and the transfer mechanism is used for transferring the wafer from the chamfering mechanism to the cleaning mechanism; and the infrared mechanism is arranged above the cleaning mechanism, and the infrared mechanism is used for obtaining temperature distribution imaging of the surface of the wafer in the cleaning mechanism so as to detect the cleaning condition of the wafer. And the cleaning mechanism is arranged to clean the wafer, so that the technical effect of improving the wafer cleaning degree is achieved.

Description

Technical Field

[0001] The present application relates to the field of wafer processing, and in particular to a chamfering device and method. Background Art

[0002] Wafer chamfering equipment is a key equipment in semiconductor manufacturing, which is used to accurately chamfer the edge of the wafer. The chamfering process is designed to remove burrs and damage on the edge of the wafer to improve the mechanical strength of the wafer and the yield rate of subsequent processing.

[0003] In the prior art, there are many debris on the surface of the wafer after chamfering, and the debris may scratch the wafer, so the wafer needs to be cleaned. However, the wafer is difficult to clean, thereby reducing the quality of the wafer.

[0004] Therefore, the technical problem of the prior art is that the chamfered wafer is difficult to clean. Summary of the invention

[0005] The present application provides a chamfering device and method, which achieves the technical effect of improving the cleanliness of the wafer by setting a cleaning mechanism to clean the wafer.

[0006] On the one hand, the present application provides a chamfering device, which adopts the following technical solution: A chamfering device comprises: a chamfering mechanism, which is used to chamfer a wafer; a cleaning mechanism, which is used to clean the wafer, and the cleaning mechanism comprises: a shell, the interior of the shell has a cleaning chamber, and the wafer is located in the cleaning chamber for cleaning; a carrier, the carrier is arranged in the interior of the cleaning chamber, the carrier has a bearing surface, the bearing surface has an adsorption function, and the bearing surface is used to adsorb and carry the wafer; the carrier has a rotational freedom around an axis to drive the wafer to rotate; and a spray component, the spray component is arranged in the interior of the cleaning chamber, and the spray component is used to spray and clean the wafer; a transfer mechanism, the transfer mechanism is arranged between the chamfering mechanism and the cleaning mechanism, and the transfer mechanism is used to transfer the wafer from the chamfering mechanism to the cleaning mechanism; and an infrared mechanism, the infrared mechanism is arranged above the cleaning mechanism, and the infrared mechanism is used to obtain temperature distribution imaging of the wafer surface in the cleaning mechanism to detect the cleanliness of the wafer.

[0007] Preferably, the spray assembly includes: a first spray component, which is arranged inside the cleaning chamber, located above the carrying surface, and inclined downward, and is used to spray clean the upper surface of the wafer; a second spray component, which is arranged inside the cleaning chamber, located below the carrying surface, and inclined upward, and is used to spray clean the lower surface of the wafer.

[0008] Preferably, the carrier includes: a carrier seat, which is arranged inside the cleaning chamber and has the rotational freedom of rotating around an axis; a sub-carrier, which has two sub-carriers, which are connected to the carrier seat, and the tops of the two sub-carriers are provided with a carrying surface for adsorbing and carrying wafers.

[0009] Preferably, the two sub-carriers are relatively independent and arranged in parallel, and the two sub-carriers are centrally symmetrical about the rotation center of the carrier seat.

[0010] Preferably, the sub-carrier is movably connected to the carrier seat so that the sub-carrier has at least a first state and a second state: in the first state, the sub-carrier contacts and adsorbs the wafer; in the second state, the sub-carrier is separated from the wafer, so that the two sub-carriers can adsorb the wafer simultaneously or alternately.

[0011] Preferably, the sub-carrier is slidably connected to the carrier seat in a vertical direction, and the carrier further comprises a driving member connected between the sub-carrier and the carrier seat, and the driving member is used to drive the sub-carrier to move in a vertical direction.

[0012] Preferably, a suction port is provided on the top side of the sub-carrier, and the suction port is connected to the negative pressure path of the carrying surface; the carrier also includes: a blocking member, which is connected to the sub-carrier and cooperates with the suction port of the adjacent sub-carrier, so that the blocking member can be raised and lowered with the sub-carrier and form a first station and a second station: at the first station, the sub-carrier is in a first state, and the blocking member covers the suction port on the adjacent sub-carrier, so that the suction port on the adjacent sub-carrier is closed; at the second station, the sub-carrier is in a second state, and the blocking member is detached from the suction port on the adjacent sub-carrier, so that the suction port on the adjacent sub-carrier is opened.

[0013] Preferably, the blocking member comprises: a connecting portion, which is connected to the sub-carrier; and a covering portion, which is connected to the connecting portion and is used to cooperate with the adsorption port of an adjacent sub-carrier.

[0014] Preferably, the two sub-carriers each have a contact surface, the two contact surfaces are in contact with each other, a suction port is provided on the top of the contact surface, and the suction port is connected to the negative pressure path of the carrying surface; so that when the sub-carrier is in the first state, the contact surface blocks the suction port of the adjacent sub-carrier; when the sub-carrier is in the second state, the contact surface is detached from the suction port of the adjacent sub-carrier.

[0015] On the other hand, the present application provides a chamfering method, which adopts the following technical solution: A chamfering method is applied to the chamfering device, wherein a wafer is chamfered by the chamfering device; the wafer is cleaned by a cleaning mechanism; and the wafer is passed through an infrared mechanism to obtain temperature distribution imaging of the wafer surface to detect the cleaning cleanliness of the wafer.

[0016] In summary, the present application includes at least one of the following beneficial technical effects: The chamfering equipment proposed in this application is equipped with a cleaning mechanism and an infrared mechanism. The cleaning mechanism can comprehensively clean the wafer, reduce the possibility of residual debris on the wafer surface, and improve the cleanliness of the wafer. After cleaning, the infrared mechanism can obtain temperature imaging of the wafer surface, and the temperature distribution imaging can be used to detect the cleanliness of the wafer, thereby realizing non-contact cleanliness detection, improving process reliability, and improving the cleanliness of the wafer. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] Figure 1 is a schematic diagram of a chamfering mechanism of the chamfering device described in the present application; Figure 2 It is a working schematic diagram of the chamfering mechanism of the chamfering device described in this application; Figure 3 is a schematic diagram of a cleaning mechanism of the chamfering device described in the present application; Figure 4 It is a schematic diagram of a carrier of the cleaning mechanism described in the present application; Figure 5 This is a first working schematic diagram of the carrier of the cleaning mechanism described in the present application; Figure 6 It is a second working schematic diagram of the carrier of the cleaning mechanism described in the present application; Figure 7 is a schematic diagram of a blocking member of the cleaning mechanism described in the present application; Figure 8 It is a working schematic diagram of the blocking member of the cleaning mechanism described in the present application; Fig. 9 It is a structural schematic diagram of the blocking member of the cleaning mechanism described in the present application; Fig.10 It is another schematic diagram of a carrier of the cleaning mechanism described in the present application; Fig.11It is a working schematic diagram of another carrier of the cleaning mechanism described in the present application; Fig.12 It is a schematic diagram of the chamfering method process of this application.

[0018] Explanation of the reference numerals: 100, chamfering mechanism; 110, grinding wheel; 200, cleaning mechanism; 210, shell; 211, cleaning chamber; 220, carrier; 221, carrying surface; 222, carrier seat; 223, sub-carrier; 2231, suction port; 2232, contact surface; 223A, first sub-carrier; 223B, second sub-carrier; 224, blocking member; 2241, connecting portion; 2242, covering portion; 230, spray assembly; 231, first spray member; 232, second spray member; W, wafer. DETAILED DESCRIPTION

[0019] The serial numbers assigned to the components herein, such as "first", "second", etc., are only used to distinguish the objects described and do not have any order or technical meaning. The "connection" and "coupling" mentioned in this application, unless otherwise specified, include direct and indirect connections (couplings). In the description of this application, it should be understood that the terms "upper", "lower", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", etc. indicate positions or positional relationships based on the positions or positional relationships shown in the accompanying drawings, which are only for the convenience of describing this application and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on this application.

[0020] In the present application, unless otherwise clearly specified and limited, a first feature being “above” or “below” a second feature may mean that the first and second features are in direct contact, or the first and second features are in indirect contact through an intermediate medium. Moreover, a first feature being “above”, “above”, and “above” a second feature may mean that the first feature is directly above or obliquely above the second feature, or simply means that the first feature is higher in level than the second feature. A first feature being “below”, “below”, and “below” a second feature may mean that the first feature is directly below or obliquely below the second feature, or simply means that the first feature is lower in level than the second feature.

[0021] The present application provides a chamfering device and method, which cleans the wafer W by setting a cleaning mechanism 200, thereby achieving the technical effect of improving the cleanliness of the wafer W.

[0022] In order to better understand the above technical solution, the above technical solution will be described in detail below in conjunction with the accompanying drawings and specific implementation methods. It should be understood that the specific embodiments described here are only used to explain the present application and are not used to limit the present application.

[0023] The chamfering device and chamfering method proposed in this application are intended to achieve efficient and accurate chamfering and cleaning of the wafer W, and to ensure the cleanliness of the wafer W by infrared detection means. Figure 1-11 As shown, the chamfering equipment includes a chamfering mechanism 100, a transfer mechanism, a cleaning mechanism 200 and an infrared mechanism. The chamfering mechanism 100 is used to chamfer the wafer W so that the edge of the wafer W meets the process requirements; the transfer mechanism is used to transfer the wafer W; the cleaning mechanism 200 is used to spray clean the wafer W to remove debris from the wafer W during the chamfering process; the infrared mechanism is used to detect the cleaned wafer W so that the wafer W meets the cleanliness requirements.

[0024] The chamfering mechanism 100 is used to chamfer the wafer W so that the edge of the wafer W meets the process requirements. Figure 1 , 2 As shown, the chamfering mechanism 100 generally includes grinding wheels 110 distributed up and down, so that the wafer W is arranged on the turntable, and the edge of the wafer W is in close and uniform contact with the grinding wheel 110; the grinding wheel 110 grinds the edge of the wafer W at a certain speed and pressure, and the material, shape and grinding parameters of the grinding wheel 110 are adjusted to ensure the accuracy and consistency of the chamfering effect. The chamfering mechanism 100 will not be described in detail here.

[0025] The transfer mechanism (not shown) is used to transfer the wafer W. The transfer mechanism is disposed between the chamfering mechanism 100 and the cleaning mechanism 200, and is used to transfer the chamfered wafer W from the chamfering mechanism 100 to the cleaning mechanism 200. The transfer mechanism can be a structure such as a robot arm or a conveyor belt, and its specific design can be adjusted according to actual process requirements.

[0026] The infrared mechanism (not shown) is used to detect the cleaning degree of the wafer W. The infrared mechanism is arranged above the cleaning mechanism 200, and can detect the wafer W located on the carrier 220, and obtain the temperature distribution of the wafer W through infrared to determine the cleanliness degree of the wafer W; in one embodiment, the infrared mechanism can be an infrared imaging device.

[0027] like Figure 3 As shown, the cleaning mechanism 200 is used to spray clean the wafer W to remove debris from the wafer W during the chamfering process. The cleaning mechanism 200 is used to clean the chamfered wafer W, and the cleaning mechanism 200 includes a housing 210, a carrier 220 and a spray assembly 230; like Figure 3As shown, a cleaning chamber 211 is provided inside the shell 210, and the wafer W is cleaned in the chamber. The shell 210 is made of corrosion-resistant material to ensure the chemical stability of the cleaning solution. The carrier 220 is arranged inside the cleaning chamber 211, and the carrier 220 has a bearing surface 221, and the bearing surface 221 has adsorption holes. A negative pressure path is arranged inside the carrier 220 so that the bearing surface 221 has an adsorption function, and the bearing surface 221 is used to adsorb and carry the wafer W; the carrier 220 has a rotational freedom around the axis to drive the wafer W to rotate. The spray assembly 230 is arranged inside the cleaning chamber 211, and the spray assembly 230 is used to spray and clean the wafer W. The wafer W is attached to the bearing surface 221 of the carrier 220 by vacuum adsorption, and the carrier 220 drives the wafer W to rotate. The spray assembly 230 can spray and clean the wafer W in all directions.

[0028] Furthermore, in order to improve the cleaning effect of the spray assembly 230 on the wafer W, as Figure 3 As shown, the spray assembly 230 includes a first spray member 231 and a second spray member 232 . The first spray member 231 and the second spray member 232 are both disposed in the cleaning chamber 211 of the housing 210 . The first spray member 231 and the second spray member 232 cooperate to spray and clean the wafer W together. It is worth noting that the carrying surface 221 of the carrier 220 is arranged at the top of the carrier 220, and the carrying surface 221 is arranged as a plane. The first spray member 231 is arranged above the carrying surface 221, and the first spray member 231 is inclined downward, so that the first spray member 231 can spray and clean the upper surface of the wafer W obliquely from top to bottom; the second spray member 232 is arranged below the carrying surface 221, and the second spray member 232 is inclined upward, so that the second spray member 232 can spray and clean the lower surface of the wafer W obliquely from bottom to top; in one embodiment, the first spray member 231 and the second spray member 232 are fixedly connected to the inner wall of the shell 210, and the first spray member 231 and the second spray member 232 are nozzles, which are supplied by external cleaning liquid.

[0029] like Figure 4-6As shown, the carrier 220 includes a carrier seat 222 and a sub-carrier 223. The sub-carrier 223 is connected to the carrier seat 222. The sub-carrier 223 is driven to rotate by the carrier seat 222, thereby driving the wafer W adsorbed on the sub-carrier 223 to rotate, completing cleaning and drying. Specifically, the carrier seat 222 is arranged inside the cleaning chamber 211, and the carrier seat 222 has the rotational freedom of self-rotation around the axis; two sub-carriers 223 are arranged, and the tops of the two sub-carriers 223 both have a bearing surface 221, and the bearing surface 221 has adsorption holes, and the interior of the sub-carrier 223 is provided with a negative pressure path, so that the bearing surface 221 has an adsorption function, so that the bearing surfaces 221 of the two sub-carriers 223 can jointly adsorb the wafer W or alternately adsorb the wafer W, so that the wafer W is fixed on the sub-carrier 223 by the adsorption effect, and the rotation of the carrier seat 222 drives the wafer W to rotate; wherein, the two sub-carriers 223 are relatively independent and arranged in parallel, and the two sub-carriers 223 are centrally symmetrical about the rotation center of the carrier seat 222; the wafer W is adsorbed by the two sub-carriers 223 respectively, so as to improve the adsorption force stability of the wafer W.

[0030] Furthermore, if Figure 5 , 6 As shown, the sub-carrier 223 is movably connected to the carrier seat 222 so that the sub-carrier 223 has at least a first state and a second state: in the first state, the sub-carrier 223 contacts and adsorbs the wafer W; in the second state, the sub-carrier 223 is separated from the wafer W, so that the two sub-carriers 223 can adsorb the wafer W simultaneously or alternately.

[0031] Specifically, the carrier 220 further includes a driving member (not shown), which is used to drive the sub-carrier 223 to move; Figure 5 , 6 As shown, the sub-carrier 223 is movably connected to the carrier seat 222 and has the freedom of movement in the vertical direction; the sub-carrier 223 is driven to move in the vertical direction by a driving member, and the sub-carrier 223 can have at least a first state and a second state: in the first state, the sub-carrier 223 contacts and adsorbs the wafer W; in the second state, the sub-carrier 223 is separated from the wafer W. More specifically, in the first state of the sub-carrier 223, the carrying surface 221 located at the top of the sub-carrier 223 has an adsorption effect on the wafer W under the action of the negative pressure inside the sub-carrier 223, and the lower surface of the wafer W and the carrying surface 221 of the sub-carrier 223 are in contact with each other, that is, cleaning and spin-drying cannot be achieved in this area; the sub-carrier 223 is driven down by the driving member to switch the sub-carrier 223 to the second state. In the second state, due to the descending of the sub-carrier 223, the carrying surface 221 located at the top of the sub-carrier 223 is separated from the lower surface of the wafer W, so that a gap is formed between the lower surface of the wafer W and the carrying surface 221, that is, there is no contact between the lower surface of the wafer W and the carrying surface 221, so that cleaning and spin-drying can be achieved in this area.

[0032] Further, such as Figure 5 , 6 As shown, the sub-carrier 223 is connected to the carrier seat 222 by sliding in the vertical direction. In one embodiment, the sub-carrier 223 is sleeved on the carrier seat 222 in the vertical direction, so that the negative pressure path in the sub-carrier 223 can be connected to the external negative pressure source through the carrier seat 222, and the sub-carrier 223 and the carrier seat 222 can be sealed by a sealing ring. Furthermore, the driving member is used to drive the sub-carrier 223 to rise and fall, so that the sub-carrier 223 switches between the first state and the second state. Two driving members are correspondingly provided, and the driving members are connected between the sub-carrier 223 and the carrier seat 222; in one embodiment, the driving member can be a cylinder; it can be understood that in the first state and / or the second state, the driving member also plays a supporting role for the sub-carrier 223 to maintain the current state of the position of the sub-carrier 223.

[0033] During the cleaning process, Figure 5 , 6 As shown, by alternately adsorbing the wafer W by the two sub-carriers 223, the second spraying member 232 can fully clean the lower surface of the wafer W, reduce the coverage area of ​​the wafer W adsorbed, and improve the cleaning effect of the wafer W; in the spin-drying process, by alternately adsorbing the wafer W by the two sub-carriers 223, the spray liquid can be prevented from remaining in the gap between the sub-carrier 223 and the wafer W, and water stains can be prevented from forming on the wafer W, further improving the cleaning effect of the wafer W. It is worth noting that when the two sub-carriers 223 are alternately adsorbed, the sub-carrier 223 can be lowered to get rid of the adsorption effect on the wafer W. Preferably, the sub-carrier 223 can be independently vacuum controlled, and when it needs to be lowered, the adsorption function of the current sub-carrier 223 can be canceled.

[0034] Further, such as Figure 7-11 As shown, a suction port 2231 is provided on the top side of each sub-carrier 223, and the suction port 2231 is connected to the suction path inside the sub-carrier 223 (carrying surface 221); Figure 7 , 8 As shown, the carrier 220 also includes a blocking member 224. Specifically, each sub-carrier 223 is provided with a blocking member 224, which is connected to the sub-carrier 223 and is used to cooperate with the suction port 2231 of the adjacent sub-carrier 223. Under the driving action of the driving member, the blocking member 224 can be raised and lowered along with the sub-carrier 223, so that the blocking member 224 forms a first station and a second station: at the first station, the sub-carrier 223 is in a first state, and the blocking member 224 closes the suction port 2231 on the adjacent sub-carrier 223; at the second station, the sub-carrier 223 is in a second state, and the blocking member 224 opens the suction port 2231 on the adjacent sub-carrier 223.

[0035] In other words, if Figure 7 , 8 As shown, the adsorption port 2231 set on the top side of each sub-carrier 223 is connected to the adsorption path inside the sub-carrier 223, and the liquid is absorbed on the wafer W or the carrying surface 221 through the adsorption port 2231; at the same time, the blocking member 224 cooperates with the adsorption port 2231 of the adjacent sub-carrier 223, and the adsorption port 2231 can be flexibly closed or opened as the sub-carrier 223 rises and falls, so that the blocking member 224 forms two different working states of the first station and the second station; when the blocking member 224 is in the first station (the sub-carrier 223 adsorbs the wafer W), the blocking member 224 closes the adsorption port 2231 of the adjacent sub-carrier 223; when the blocking member 224 is in the second station (the sub-carrier 223 is separated from the wafer W), the blocking member 224 opens the adsorption port 2231 of the adjacent sub-carrier 223.

[0036] Specifically, in the cleaning or drying stage, firstly, both sub-carriers 223 are in the first state, that is, both sub-carriers 223 adsorb the lower surface of the wafer W, at this time, the blocking member 224 is located at the first position, and the blocking member 224 covers the adsorption port 2231 of the other sub-carrier 223, that is, at this time, the adsorption ports 2231 on the two sub-carriers 223 are in a blocked state; like Figure 7 , 8 As shown, two sub-carriers 223 are defined as a first sub-carrier 223A and a second sub-carrier 223B, and the first sub-carrier 223A is lowered, that is, switched to the second state, and the first sub-carrier 223A is separated from the wafer W, then the first sub-carrier 223A drives the blocking member 224 connected thereto to descend together, so that the blocking member 224 is separated from the adsorption port 2231 of the second sub-carrier 223B and is opened, and since the adsorption port 2231 and the negative pressure path inside the second sub-carrier 223B are connected, the adsorption port 2231 of the second sub-carrier 223B is opened, and the liquid can be absorbed by the area of ​​the first sub-carrier 223A separated from the wafer W, and the liquid can be absorbed by the carrying surface 221 of the first sub-carrier 223A at the same time; after the area of ​​the first sub-carrier 223A separated from the wafer W is cleaned or dried, the first sub-carrier 223A is raised and reset, and the second sub-carrier 223B is lowered, and the above actions are repeated.

[0037] It should be noted that when the sub-carrier 223 descends, its own adsorption port 2231 is not opened, and the shape, area or size of the blocking member 224 on the adjacent sub-carrier 223 can be adjusted to achieve this; and since the blocking member 224 on the sub-carrier 223 is relatively small, it does not affect the opened adsorption port 2231 from absorbing liquid.

[0038] Further, such as Fig. 9As shown, the blocking assembly includes a connecting portion 2241 and a covering portion 2242, wherein the connecting portion 2241 is connected to the sub-carrier 223, and the covering portion 2242 is used to cooperate with the adsorption port 2231 of the adjacent sub-carrier 223. When the sub-carrier 223 is in the first state, the covering portion 2242 closes the adsorption port 2231 on the adjacent sub-carrier 223; when the sub-carrier 223 is in the second state, the covering portion 2242 opens the adsorption port 2231 on the adjacent sub-carrier 223.

[0039] It is understandable that during the drying process, when the sub-carrier 223 adsorbs the wafer W, the liquid is thrown to the edge during rotation, but the area where the sub-carrier 223 and the wafer W contact hinders the flow of the liquid due to the adsorption force, resulting in residue. Even when the sub-carrier 223 is in the second state (descending), the liquid moves outward due to the centrifugal force, and the adsorption effect of the carrier 220 is difficult to capture in the vertical direction. In this embodiment, by alternately lifting and lowering the sub-carrier 223, a gap can be formed to make it easier for the liquid to be thrown out. At the same time, the adsorption port 2231 of the adjacent carrier 220 is opened, and the residual liquid in the gap between the descending sub-carrier 223 and the wafer W can be sucked. Further, even if the sub-carrier 223 descends, the lower surface area of ​​the wafer W separated from the sub-carrier 223 is located in the center of the wafer W, and the centrifugal force on the liquid is small. The centrifugal force of the liquid in the central area is not enough to completely throw it out during rotation, resulting in residue, so the adsorption effect of the adsorption port 2231 is required to remove it; the adsorption port 2231 plays an active suction role here to make up for the lack of centrifugal force. There is also liquid on the carrying surface 221 of the descending sub-carrier 223 (in the second state). Due to the small centrifugal force, the adsorption port 2231 is required to absorb it. When the sub-carrier 223 descends, a gap is formed in the original contact area. The remaining liquid cannot be discharged by centrifugal force alone, and negative pressure suction is required to remove it.

[0040] In other embodiments, the structure of the two sub-carriers 223 may also be: Fig.10 , 11 As shown, both sub-carriers 223 have a contact surface 2232, the two contact surfaces 2232 are in contact with each other, and a suction port 2231 is provided on the top of the contact surface 2232, and the suction port 2231 is connected to the negative pressure path of the carrying surface 221; so that when the sub-carrier 223 is in the first state, the contact surface 2232 blocks the suction port 2231 of the adjacent sub-carrier 223; when the sub-carrier 223 is in the second state, the contact surface 2232 is separated from the suction port 2231 of the adjacent sub-carrier 223.

[0041] Specifically, Fig.10 , 11As shown, the side surfaces of the two sub-carriers 223 are in contact with each other, and the sides in contact with each other are defined as contact surfaces 2232. A suction port 2231 is provided on the top of the contact surface 2232. The positions of the two suction ports 2231 are staggered so that the contact surfaces 2232 of the two sub-carriers 223 can block the suction port 2231. When the sub-carriers 223 are in the first state, the contact surfaces 2232 and the suction port 2231 are tightly fitted, that is, the suction port 2231 is blocked by the contact surface 2232 of the adjacent sub-carrier 223. When a sub-carrier 223 descends, the contact surfaces 2232 are separated, so that the suction port 2231 is exposed and opened, and the liquid is sucked by negative pressure.

[0042] This application also proposes a chamfering method, such as Fig.12 As shown, including: S1: Chamfering process: fix the wafer W to the chamfering mechanism 100 and complete the chamfering according to preset parameters; S2: Wafer W transfer: The wafer W is transferred to the carrier 220 of the cleaning mechanism 200 by the transfer mechanism; S3: Double-sided spray cleaning: start the first spray component 231 and the second spray component 232 to clean the upper and lower surfaces of the wafer W respectively; Specifically, the wafer W is sent to the chamfering mechanism 100 for chamfering; the chamfering mechanism 100 chamfers the wafer W according to preset process parameters to ensure the uniformity and accuracy of the chamfering; After the chamfering is completed, the wafer W is sent to the cleaning mechanism 200 for cleaning through the transfer mechanism; during the cleaning process, the carrier seat 222 drives the wafer W to rotate, and the spray assembly 230 sprays and cleans the upper and lower surfaces of the wafer W; at the same time, by adjusting the state of the sub-carrier 223 (the first state or the second state), the wafer W can be alternately cleaned during the cleaning process, thereby improving the cleaning efficiency; Furthermore, it also includes S4: alternating drying process: The first sub-carrier 223A is driven to descend, so that the suction port 2231 on the second sub-carrier 223B is opened, and the spin drying is started, and the opened suction port 2231 sucks the liquid between the first sub-carrier 223A and the wafer W; Reset the first sub-carrier 223A, drive the second sub-carrier 223B to descend, and repeat the drying and suction; Repeat several times.

[0043] S5: After cleaning is completed, the temperature distribution image of the surface of the wafer W is obtained through the infrared mechanism; the infrared mechanism monitors and analyzes the temperature of the surface of the wafer W in real time to determine the cleanliness of the wafer W after cleaning.

[0044] Although the preferred embodiments of the present application have been described, those skilled in the art may make other changes and modifications to these embodiments once they have learned the basic creative concept. Therefore, the appended claims are intended to be interpreted as including the preferred embodiments and all changes and modifications falling within the scope of the present application.

[0045] Obviously, those skilled in the art can make various changes and modifications to the present application without departing from the spirit and scope of the present application. Thus, if these modifications and variations of the present application fall within the scope of the claims of the present application and their equivalents, the present application is also intended to include these modifications and variations.

Claims

1. A chamfering device, characterized in that: include: A chamfering mechanism (100), wherein the chamfering mechanism (100) is used to chamfer a wafer (W); A cleaning mechanism (200), the cleaning mechanism (200) being used to clean a wafer (W), the cleaning mechanism (200) comprising: A housing (210), wherein a cleaning chamber (211) is provided inside the housing (210), and a wafer (W) is located in the cleaning chamber (211) for cleaning; A carrier (220), the carrier (220) being arranged inside the cleaning chamber (211), the carrier (220) having a carrying surface (221), the carrying surface (221) having an adsorption function, the carrying surface (221) being used to adsorb and carry a wafer (W); the carrier (220) having a rotational freedom of self-rotation around an axis to drive the wafer (W) to rotate; and A spray assembly (230), the spray assembly (230) being arranged inside the cleaning chamber (211), and the spray assembly (230) being used for spray cleaning of a wafer (W); a transfer mechanism, the transfer mechanism being arranged between the chamfering mechanism (100) and the cleaning mechanism (200), the transfer mechanism being used to transfer a wafer (W) from the chamfering mechanism (100) to the cleaning mechanism (200); and An infrared mechanism, the infrared mechanism being arranged above the cleaning mechanism (200), the infrared mechanism being used to obtain temperature distribution imaging of the surface of the wafer (W) in the cleaning mechanism (200) to detect the cleanliness of the wafer (W).

2. A chamfering device according to claim 1, characterized in that: The spray assembly (230) comprises: a first spraying member (231), the first spraying member (231) being arranged inside the cleaning chamber (211), the first spraying member (231) being located above the carrying surface (221), and the first spraying member (231) being arranged tilted downward, and the first spraying member (231) being used for spray cleaning the upper surface of a wafer (W); A second spray member (232), the second spray member (232) is arranged inside the cleaning chamber (211), the second spray member (232) is located below the supporting surface (221), and the second spray member (232) is arranged to be inclined upward, and the second spray member (232) is used for spraying and cleaning the lower surface of the wafer (W).

3. A chamfering device according to claim 1, characterized in that: The carrier (220) comprises: A carrier seat (222), the carrier seat (222) being arranged inside the cleaning chamber (211), the carrier seat (222) having a rotational freedom of rotation around an axis; A sub-carrier (223), wherein two sub-carriers (223) are provided, the two sub-carriers (223) are connected to the carrier seat (222), and the tops of the two sub-carriers (223) are both provided with a carrying surface (221) for adsorbing and carrying a wafer (W).

4. A chamfering device according to claim 3, characterized in that: The two sub-carriers (223) are relatively independent and arranged in parallel, and the two sub-carriers (223) are centrally symmetrical about the rotation center of the carrier seat (222).

5. A chamfering device according to claim 3, characterized in that: The sub-carrier (223) is movably connected to the carrier seat (222) so that the sub-carrier (223) has at least a first state and a second state: in the first state, the sub-carrier (223) contacts and adsorbs the wafer (W); in the second state, the sub-carrier (223) is separated from the wafer (W), so that the two sub-carriers (223) can adsorb the wafer (W) simultaneously or alternately.

6. A chamfering device according to claim 5, characterized in that: The sub-carrier (223) is slidably connected to the carrier seat (222) in a vertical direction, and the carrier (220) further comprises a driving member, which is connected between the sub-carrier (223) and the carrier seat (222), and is used to drive the sub-carrier (223) to move in a vertical direction.

7. A chamfering device according to claim 6, characterized in that: The top side of the sub-carrier (223) is provided with a suction port (2231), and the suction port (2231) is connected to the negative pressure path of the carrying surface (221); the carrier (220) further comprises: A blocking member (224), the blocking member (224) being connected to the sub-carrier (223) and cooperating with a suction port (2231) of an adjacent sub-carrier (223), so that the blocking member (224) can be raised and lowered along with the sub-carrier (223) and a first working position and a second working position are formed: at the first working position, the sub-carrier (223) is in a first state, the blocking member (224) covers the suction port (2231) on the adjacent sub-carrier (223), so that the suction port (2231) on the adjacent sub-carrier (223) is closed; at the second working position, the sub-carrier (223) is in a second state, the blocking member (224) is detached from the suction port (2231) on the adjacent sub-carrier (223), so that the suction port (2231) on the adjacent sub-carrier (223) is opened.

8. A chamfering device according to claim 7, characterized in that: The blocking member (224) comprises: A connecting portion (2241), the connecting portion (2241) being connected to the sub-carrier (223); A covering portion (2242), the covering portion (2242) being connected to the connecting portion (2241), and the covering portion (2242) being used to cooperate with the adsorption port (2231) of the adjacent sub-carrier (223).

9. The chamfering device according to claim 6, characterized in that: The two sub-carriers (223) each have a contact surface (2232), the two contact surfaces (2232) are in contact with each other, a suction port (2231) is provided at the top of the contact surface (2232), and the suction port (2231) is connected to the negative pressure path of the carrying surface (221); so that when the sub-carrier (223) is in a first state, the contact surface (2232) blocks the suction port (2231) of an adjacent sub-carrier (223); and when the sub-carrier (223) is in a second state, the contact surface (2232) is detached from the suction port (2231) of an adjacent sub-carrier (223).

10. A chamfering method, characterized in that: Applicable to the chamfering device as claimed in any one of claims 1 to 9, Passing a wafer (W) through a chamfering device to perform chamfering; Allowing the wafer (W) to be cleaned by a cleaning mechanism (200); The wafer (W) is passed through an infrared mechanism to obtain temperature distribution imaging on the surface of the wafer (W) to detect the cleaning cleanliness of the wafer (W).

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