Hot plate control method and device based on wafer processing

Abstract

The invention discloses a hot plate control method and device based on wafer processing, and the method comprises the following steps: A, placing a wafer on a cooling conveying plate through a mechanical arm, and enabling a first telescoping cylinder to drive a plurality of first PINs to rise through a connecting plate; b, a second telescopic cylinder drives a second PIN needle to ascend, the second PIN needle jacks up the wafer, and a moving assembly drives the second PIN needle to move so as to feed the wafer onto the first PIN needle; c, the first PIN drives the wafer to descend, the wafer is located at the first height position, the hot plate upper cover descends, and the heating core works to heat the wafer at the first temperature; according to the invention, heat treatment at multiple temperatures can be conveniently carried out on the wafer, the problems that each hot plate can only carry out one-temperature treatment, time and labor are wasted and the efficiency is low are avoided, different distances between the wafer and the hot plates can be well utilized, so that the wafer can be heated at different temperatures, the structure is simple, the operation is simple and convenient, and the practicability of the device is improved.

Description

Technical Field

[0001] The present invention specifically relates to a hot plate control method and device based on wafer processing. Background Art

[0002] After the wafer is coated, it needs to be heat treated to make the chemical substances on the wafer surface meet specific requirements. The existing wafer heat treatment requires continuous treatment at different temperatures. Usually, the wafer is first sent to a hot plate at one temperature for heat treatment. After the treatment is completed, the robotic arm sends the wafer to a hot plate at another temperature for heat treatment again. After the two heat treatments are completed, the next process is carried out.

[0003] In the prior art, each hot plate can only perform processing at one temperature, such as a high-temperature hot plate for high-temperature processing and a low-temperature hot plate for low-temperature processing. As a result, when the wafer is processed at different temperatures, it needs to be transferred back and forth between different hot plates, resulting in low wafer processing efficiency, troublesome and time-consuming, and a large number of hot plates are required. For this reason, we propose a hot plate control method and device based on wafer processing. Summary of the invention

[0004] The purpose of the present invention is to provide a hot plate control method and device based on wafer processing, so as to solve the problem mentioned in the above background technology that the existing hot plate can only perform one temperature treatment on the wafer, and when performing different temperature treatments on the wafer, multiple hot plates are required, which is time-consuming and has low processing efficiency.

[0005] To achieve the above object, the present invention provides the following technical solution: a hot plate control method based on wafer processing, comprising the following steps:

[0006] Step A: The wafer is placed on the cooling conveyor plate by a robotic arm, and the first telescopic cylinder drives a plurality of first PIN pins to extend from the inner side of the hot plate through the connecting plate, and the upper cover of the hot plate is driven to rise by an external cylinder;

[0007] Step B: The second telescopic cylinder drives the second PIN needle to rise, the second PIN needle lifts the wafer, and the moving component drives the second PIN needle to move to send the wafer onto the first PIN needle;

[0008] Step C: The first PIN needle drives the wafer to descend, the wafer is at a first height position, the upper cover of the hot plate descends, and the heating core works to heat the wafer to a first temperature;

[0009] Step D: After the first temperature treatment is completed, the first PIN needle drives the wafer to move to a second height position to continue heating the wafer;

[0010] Step E: Similarly, adjust the heating height multiple times. After the wafer is heated, the upper cover of the hot plate rises, the first PIN drives the wafer to rise, the conveying assembly drives the wafer back to the cooling transfer plate, and the robotic arm takes out the wafer.

[0011] Preferably, in step C, the first height position corresponds to the support pin on the hot plate, and in step D, the second height position is higher than the position of the support pin.

[0012] Preferably, in step C, the first height position is higher than the position of the support pin on the hot plate, and in step D, the second height position corresponds to the position of the support pin.

[0013] Preferably, the inner top end of the first PIN needle has a probe for detecting temperature so as to correct the wafer processing temperature after detecting the temperature.

[0014] Preferably, the correction of the wafer processing temperature is achieved by adjusting the position of the first PIN to change the temperature to which the wafer is subjected or by adjusting the power of the hot plate.

[0015] Preferably, the first PIN needles are replaced by support pins on the hot plate that rise or fall to drive the wafer to rise or fall.

[0016] A hot plate device based on wafer processing, comprising:

[0017] A heating plate body, wherein a conveying assembly for wafer loading is disposed on one side of the heating plate body, and a heating core is disposed on the upper end of the inner side of the heating plate body;

[0018] A first telescopic cylinder is arranged at the lower end of the inner side of the heating plate body, and a connecting plate is provided at the top end of the first telescopic cylinder;

[0019] A first PIN is arranged on the connecting plate to lift up the wafer, and a through hole is opened on the upper surface of the heating plate body corresponding to the first PIN;

[0020] A support pin is fixed to the upper surface of the heating plate body;

[0021] The upper cover of the hot plate is arranged on the heating plate body, and the lower surface of the upper cover of the hot plate is provided with an extended section.

[0022] Preferably, the conveying assembly includes a moving assembly, a second PIN needle, a cooling transfer plate and a second telescopic cylinder. The moving assembly is arranged on one side of the heating plate body, and the moving assembly has a second telescopic cylinder. The second PIN needle is fixed to the top of the second telescopic cylinder through a mounting plate, and the cooling transfer plate is arranged above the second PIN needle through a bracket to support and place the wafer.

[0023] Preferably, a through groove is opened on the inner side of the cooling conveying plate, and the through groove passes through a side wall of the cooling conveying plate.

[0024] Preferably, the upper surface of the first PIN pin has a contact surface layer having the same thermal conductivity as air.

[0025] Compared with the prior art, the present invention has the following beneficial effects:

[0026] The present invention facilitates heat treatment of wafers at multiple temperatures, avoiding the situation where each hot plate can only perform one temperature treatment, which is time-consuming and inefficient. The present invention can make good use of the different distances between the wafer and the hot plate to achieve heating of the wafer at different temperatures, has a simple structure, is easy to operate, and improves the practicability of the device. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] Figure 1 It is a structural schematic diagram of the present invention;

[0028] Figure 2 It is a schematic diagram of the through slot structure of the present invention;

[0029] Figure 3 It is a schematic diagram of the process of the present invention.

[0030] In the figure: 1. Heating plate body; 3. First telescopic cylinder; 4. Connecting plate; 5. Support pin; 6. Upper cover of hot plate; 601. Extension section; 7. First PIN needle; 8. Moving assembly; 9. Second PIN needle; 10. Cooling conveying plate; 101. Heating core; 11. Second telescopic cylinder; 12. Through groove. DETAILED DESCRIPTION

[0031] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0032] See also Figure 1-Figure 3 The present invention provides a technical solution: a hot plate control method based on wafer processing, comprising the following steps:

[0033] Step A: Place the wafer on the cooling conveyor plate 10 by the robot arm, the first telescopic cylinder 3 drives a plurality of first PIN pins 7 to extend from the inner side of the hot plate 1 through the connecting plate 4, and the upper cover 6 of the hot plate is driven to rise by the external cylinder;

[0034] Step B: The second telescopic cylinder 11 drives the second PIN needle 9 to rise, and the second PIN needle 9 lifts the wafer, and the moving component 8 drives the second PIN needle 9 to move, so as to send the wafer onto the first PIN needle 7;

[0035] Step C: The first PIN needle 7 drives the wafer to descend, the wafer is at a first height position, the upper cover 6 of the hot plate descends, and the heating core 101 works to heat the wafer to a first temperature;

[0036] Step D: After the first temperature treatment is completed, the first PIN needle 7 drives the wafer to move to the second height position to continue heating the wafer;

[0037] Step E: Similarly, the heating height is adjusted multiple times. After the wafer is heated, the upper cover 6 of the hot plate rises, the first PIN needle 7 drives the wafer to rise, the conveying assembly drives the wafer back to the cooling transfer plate 10, and the robot arm takes out the wafer.

[0038] Preferably, in step C, the first height position corresponds to the support pin 5 on the hot plate 1 , and in step D, the second height position is higher than the position of the support pin 5 .

[0039] Preferably, in step C, the first height position is higher than the position of the support pin 5 on the hot plate 1 , and in step D, the second height position corresponds to the position of the support pin 5 .

[0040] Preferably, the inner top of the first PIN needle 7 has a probe for detecting temperature so as to correct the wafer processing temperature after detecting the temperature.

[0041] Preferably, the wafer processing temperature is corrected by adjusting the position of the first PIN needle 7 to change the temperature to which the wafer is subjected or by adjusting the power of the hot plate.

[0042] Preferably, the first PIN needle 7 is replaced by the support pin 5 on the hot plate 1 to rise or fall to drive the wafer to rise or fall, so as to place the wafer at different heights and thus be subjected to different heating temperatures for heating treatment.

[0043] A hot plate device based on wafer processing, comprising:

[0044] A heating plate body 1, a conveying assembly for wafer loading is arranged on one side of the heating plate body 1, and a heating core 101 is arranged on the upper end of the inner side of the heating plate body 1, so as to realize rapid heating and adjustment of the wafer temperature through electric heating;

[0045] The first telescopic cylinder 3 is arranged at the lower end of the inner side of the heating plate body 1, and the top end of the first telescopic cylinder 3 is provided with a connecting plate 4;

[0046] The first PIN needle 7 is arranged on the connecting plate 4 to lift the wafer, and a through hole is opened on the upper surface of the heating plate body 1 corresponding to the first PIN needle 7, so that when heating the wafer, the position of the wafer can be adjusted to achieve different temperatures for heating the wafer;

[0047] Support pins 5 are fixed to the upper surface of the heating plate body 1 to facilitate supporting the wafer during heating;

[0048] The upper cover 6 of the hot plate is arranged on the heating plate body 1, and the lower surface of the upper cover 6 of the hot plate has an extension section 601, which is convenient for heating the wafer at different heights, thereby achieving heating effects of different temperatures. At the same time, when the wafer is placed at a higher position, the exhaust effect of the upper cover 6 of the hot plate may be affected. Therefore, the height of the upper cover 6 of the hot plate is lengthened to reduce the impact on the exhaust.

[0049] Preferably, the conveying assembly includes a moving assembly 8, a second PIN needle 9, a cooling transfer plate 10 and a second telescopic cylinder 11. The moving assembly 8 is arranged on one side of the heating plate body 1, and the moving assembly 8 has a second telescopic cylinder 11. The second PIN needle 9 is fixed to the top of the second telescopic cylinder 11 through a mounting plate. The cooling transfer plate 10 is arranged above the second PIN needle 9 through a bracket to support and place the wafer, so as to facilitate the conveying of the wafer to the first PIN needle 7.

[0050] Preferably, a through groove 12 is opened on the inner side of the cooling conveying plate 10 , and the through groove 12 passes through a side wall of the cooling conveying plate 10 .

[0051] Preferably, the upper surface of the first PIN needle 7 has a contact surface layer with the same thermal conductivity as air. Selecting a material with lower thermal conductivity, close to the thermal conductivity of air, can slow down the rapid change of temperature difference and reduce the generation of thermal stress, thereby improving the stability of heat treatment and the quality of wafers. The material of the contact surface layer is aluminum foam or glass.

[0052] Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that various changes, modifications, substitutions and variations may be made to the embodiments without departing from the principles and spirit of the present invention, and that the scope of the present invention is defined by the appended claims and their equivalents.

Claims

1. A hot plate control method based on wafer processing, characterized in that: The steps include: Step A: The wafer is placed on the cooling transfer plate (10) by a robot arm, the first telescopic cylinder (3) drives a plurality of first PIN needles (7) to extend from the inner side of the hot plate (1) through the connecting plate (4), and the upper cover (6) of the hot plate is driven to rise by an external cylinder; Step B: the second telescopic cylinder (11) drives the second PIN needle (9) to rise, the second PIN needle (9) lifts the wafer, and the moving component (8) drives the second PIN needle (9) to move, so as to send the wafer onto the first PIN needle (7); Step C: the first PIN needle (7) drives the wafer to descend, the wafer is at a first height position, the upper cover (6) of the hot plate descends, and the heating core (101) works to heat the wafer to a first temperature; Step D: After the first temperature treatment is completed, the first PIN needle (7) drives the wafer to move to a second height position to continue heating the wafer; Step E: Similarly, the heating height is adjusted multiple times. After the wafer is heated, the upper cover (6) of the hot plate rises, the first PIN needle (7) drives the wafer to rise, the conveying assembly drives the wafer back to the cooling conveying plate (10), and the robotic arm takes out the wafer.

2. A hot plate control method based on wafer processing according to claim 1, characterized in that: In the step C, the first height position corresponds to the support pin (5) on the hot plate (1), and in the step D, the second height position is higher than the position of the support pin (5).

3. The hot plate control method based on wafer processing according to claim 1, characterized in that: In the step C, the first height position is higher than the position of the support pin (5) on the hot plate (1), and in the step D, the second height position corresponds to the position of the support pin (5).

4. A hot plate control method based on wafer processing according to any one of claims 1 to 3, characterized in that: The inner top end of the first PIN needle (7) is provided with a probe for detecting temperature so as to correct the wafer processing temperature after detecting the temperature.

5. A hot plate control method based on wafer processing according to any one of claim 4, characterized in that: The correction of the wafer processing temperature is achieved by adjusting the position of the first PIN needle (7) to change the temperature of the wafer or by adjusting the power of the hot plate.

6. A hot plate control method based on wafer processing according to any one of claim 1, characterized in that: The first PIN needle (7) is replaced by the support pin (5) on the hot plate (1) to rise or fall to drive the wafer to rise or fall.

7. A hot plate device based on wafer processing, characterized in that: include: A heating plate body (1), wherein a conveying assembly for loading wafers is disposed on one side of the heating plate body (1), and a heating core (101) is disposed on the upper inner end of the heating plate body (1); A first telescopic cylinder (3) is arranged at the lower end of the inner side of the heating plate body (1), and a connecting plate (4) is provided at the top end of the first telescopic cylinder (3); A first PIN needle (7) is arranged on the connecting plate (4) to lift up the wafer, and a through hole is provided on the upper surface of the heating plate body (1) corresponding to the first PIN needle (7); A support pin (5) fixed to the upper surface of the heating plate body (1); The upper cover (6) of the hot plate is arranged on the heating plate body (1), and the lower surface of the upper cover (6) of the hot plate has an extension section (601).

8. The hot plate device based on wafer processing according to claim 7, characterized in that: The conveying assembly comprises a moving assembly (8), a second PIN needle (9), a cooling conveying plate (10) and a second telescopic cylinder (11); the moving assembly (8) is arranged on one side of the heating plate body (1), and the moving assembly (8) has a second telescopic cylinder (11); the second PIN needle (9) is fixed to the top of the second telescopic cylinder (11) through a mounting plate; the cooling conveying plate (10) is arranged above the second PIN needle (9) through a bracket to support and place the wafer.

9. A hot plate device based on wafer processing according to claim 8, characterized in that: A through groove (12) is provided on the inner side of the cooling conveying plate (10), and the through groove (12) passes through a side wall of the cooling conveying plate (10).

10. The hot plate device based on wafer processing according to claim 7, characterized in that: The upper surface of the first PIN needle (7) has a contact surface layer having the same thermal conductivity as air.

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