Semiconductor device

Abstract

A semiconductor device provided by the present invention comprises a reaction chamber, an assembly chamber, a rotary telescoping mechanism and an edge protection ring, the reaction chamber is internally provided with a bearing part for bearing a wafer, the assembly chamber is arranged on the peripheral side of the reaction chamber, and the first side of the assembly chamber is selectively connected with the reaction chamber in an on-off manner. The second side of the assembly chamber is selectively connected and disconnected with the external environment; the rotary telescopic mechanism is arranged in the assembly cavity and detachably connected with the edge protection ring, and the rotary telescopic mechanism is used for driving the edge protection ring to rotate and driving the edge protection ring to extend into the reaction cavity, so that the edge of the wafer is shielded and protected through the edge protection ring; or the edge protection ring is driven to extend out of the second side of the assembly cavity. According to the semiconductor device provided by the invention, the maintainability and replaceability of the edge protection ring and the rotary telescopic mechanism can be improved, so that factors influencing the yield of the semiconductor device can be reduced.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, and in particular to a semiconductor device. Background Art

[0002] With the continuous development of advanced manufacturing technology in the semiconductor industry, the application of etching equipment in the field of integrated circuit preparation has become increasingly prominent. Since the concentration of etching gas at the edge of the wafer may be greater than that at the center of the wafer during the etching process, an edge protection ring (EPR) is usually installed in the reaction chamber of the etching equipment. The edge protection ring is used to prevent over-etching of the edge of the wafer (i.e., the actual etching depth of the edge of the wafer is greater than the preset etching depth) by shielding the edge of the wafer.

[0003] An existing etching equipment has a reaction chamber provided with a lifting support mechanism, an edge protection ring, an electrostatic chuck (ESC) and a plurality of ejector pins. The reaction chamber is used to provide a reaction environment for semiconductor process reactions. The electrostatic chuck is used to adsorb and support wafers. The plurality of ejector pins are arranged at intervals in a circumferential direction and all penetrate the electrostatic chuck and can be lifted and lowered relative to the electrostatic chuck for cooperating with a robot to transfer the wafer between the robot and the electrostatic chuck. The lifting support mechanism is connected to the edge protection ring for supporting and lifting the edge protection ring to prevent the edge protection ring from interfering with the transfer of the wafer by the robot and the plurality of ejector pins.

[0004] However, in the prior art, different types of wafers (for example, flat-edge wafers and notch wafers) and wafers of different sizes (for example, 6-inch wafers and 8-inch wafers) need to be protected by replacing edge protection rings. Maintenance and replacement of edge protection rings requires opening the reaction chamber, and maintenance and replacement of the lifting support mechanism also requires opening the reaction chamber, resulting in poor maintainability and replaceability of the edge protection ring and the lifting support mechanism, which in turn affects the yield of the reaction chamber. Summary of the invention

[0005] The present invention aims to solve at least one of the technical problems existing in the prior art, and proposes a semiconductor device, which can improve the maintainability and replaceability of an edge protection ring and a rotating and retractable mechanism, thereby reducing factors affecting the yield of semiconductor equipment.

[0006] To achieve the purpose of the present invention, a semiconductor device is provided, comprising a reaction chamber, a component chamber, a rotating and retracting mechanism, and an edge protection ring, wherein a carrying component for carrying a wafer is arranged in the reaction chamber, the component chamber is arranged on the peripheral side of the reaction chamber, and a first side of the component chamber is selectively connected to the reaction chamber, and a second side of the component chamber is selectively connected to the external environment;

[0007] The rotating and telescopic mechanism is arranged in the component chamber and is detachably connected to the edge protection ring. The rotating and telescopic mechanism is used to drive the edge protection ring to rotate and to drive the edge protection ring to extend into the reaction chamber so as to shield and protect the edge of the wafer through the edge protection ring, or to drive the edge protection ring to extend out of the second side of the component chamber.

[0008] Optionally, the number of the component chambers is two, the number of the rotating and telescopic mechanisms is two, the edge protection ring includes two protective half rings, the two component chambers are relatively arranged on both sides of the reaction chamber, and the two rotating and telescopic mechanisms are arranged in the two component chambers in a one-to-one correspondence and are detachably connected to the two protective half rings in a one-to-one correspondence;

[0009] Each of the rotating and telescopic mechanisms is used to drive the corresponding protective half ring to rotate to the first side or the second side of the corresponding component chamber, and to drive the corresponding protective half ring to extend into the reaction chamber, so that the edge of the wafer can be shielded and protected by the relative cooperation of the two protective half rings, or to drive the corresponding protective half ring to extend out of the second side of the corresponding component chamber.

[0010] Optionally, the semiconductor device further comprises a replaceable focusing ring, the focusing ring being located below the edge protection ring and being used to surround the wafer and the supporting component to limit the position of the wafer supported on the supporting component, the focusing ring comprising two focusing half rings, and the two focusing half rings being detachably connected to the two rotating and telescopic mechanisms in a one-to-one correspondence;

[0011] Each of the rotating and telescopic mechanisms is also used to drive the corresponding focusing half ring to rotate to the first side or the second side of the corresponding component chamber, and to drive the corresponding focusing half ring to extend into the reaction chamber, so as to limit the wafer through the relative cooperation of the two focusing half rings, or to drive the corresponding focusing half ring to extend out of the second side of the corresponding component chamber.

[0012] Optionally, the semiconductor device further comprises a loading chamber, the loading chamber being located outside the reaction chamber and selectively connected to the second side of the component chamber in an on-off manner;

[0013] The rotating and telescopic mechanism is also used to drive the protective half ring and / or the focusing half ring to extend from the second side of the component chamber into the loading chamber.

[0014] Optionally, the rotating and telescopic mechanism includes a rotating mechanism and a first telescopic mechanism, the rotating mechanism is connected to the protective half ring through the first telescopic mechanism, the rotating mechanism is used to drive the first telescopic mechanism to rotate to the first side or the second side to drive the protective half ring to move to the first side or the second side, the first telescopic mechanism is used to drive the protective half ring to extend into the reaction chamber, or drive the protective half ring to extend from the second side of the component chamber into the loading chamber.

[0015] Optionally, the rotating telescopic mechanism also includes a second telescopic mechanism, and the rotating mechanism is connected to the focusing half ring through the second telescopic mechanism, and the rotating mechanism is used to drive the focusing half ring to move to the first side or the second side by driving the second telescopic mechanism to rotate to the first side or the second side, and the second telescopic mechanism is used to drive the focusing half ring to extend into the reaction chamber, or drive the focusing half ring to extend from the second side of the component chamber into the loading chamber.

[0016] Optionally, each of the protective half rings is provided with a positioning groove at one end and a positioning protrusion at the other end, and the positioning protrusion of one protective half ring is used to plug and cooperate with the positioning groove of another protective half ring to position the relative cooperation of the two protective half rings.

[0017] Optionally, the groove wall of the positioning groove is inclined, and the radial dimension of the positioning groove gradually decreases from the groove mouth to the groove bottom, and the groove bottom surface of the positioning groove is an arc surface, the side wall of the positioning protrusion is inclined, and the radial dimension of the positioning protrusion gradually increases from the top of the positioning protrusion away from the protective semi-ring to the bottom of the protective semi-ring, and the top end surface of the positioning protrusion is an arc surface.

[0018] Optionally, an inner cavity is provided in the reaction chamber, the bearing component is provided in the inner cavity, and a transfer port and an inner door are provided on the side of the inner cavity opposite to the first side of the component chamber, the transfer port is used for the entry and exit of the rotating telescopic mechanism, the protective semi-ring and the focusing semi-ring, the inner door is provided corresponding to the transfer port and can be translated relative to the transfer port to open or close the transfer port, and the inner door is provided with an avoidance port with one side being open for the rotating telescopic mechanism to pass through.

[0019] Optionally, the semiconductor device further includes a chamber on-off mechanism and / or a loading on-off mechanism, wherein the chamber on-off mechanism is disposed on a first side of the component chamber for controlling the on-off of the first side of the component chamber and the reaction chamber, and the loading on-off mechanism is disposed on a second side of the component chamber or on a side of the loading chamber opposite to the second side of the component chamber for controlling the on-off of the loading chamber and the second side of the component chamber.

[0020] The present invention has the following beneficial effects:

[0021] The semiconductor device provided by the present invention can isolate the first side of the component chamber from the reaction chamber and connect the second side of the component chamber to the external environment when it is necessary to maintain and replace the edge protection ring. The edge protection ring is driven to rotate by means of a rotating and retracting mechanism, and is driven to extend from the second side of the component chamber to the external environment by means of the rotating and retracting mechanism. Since the component chamber is arranged on the peripheral side of the reaction chamber and the rotating and retracting mechanism is detachably connected to the edge protection ring, the edge protection ring on the rotating and retracting mechanism can be maintained and replaced directly from the second side of the component chamber without opening the reaction chamber, so that the maintenance and replacement of the edge protection ring can be carried out when the reaction chamber is isolated from the external environment. In addition, by isolating the component chamber from the external environment, the edge protection ring can be driven to rotate by means of a rotating and retracting mechanism, and the edge protection ring can be extended from the second side of the component chamber to the external environment. The second side of the chamber is connected to the external environment, and the first side of the component chamber is isolated from the reaction chamber. The rotating telescopic mechanism can also be maintained and replaced directly from the second side of the component chamber without opening the reaction chamber, so that the maintenance and replacement of the rotating telescopic mechanism can be carried out when the reaction chamber is isolated from the external environment, thereby making it possible to maintain and replace the edge protection ring and / or the rotating telescopic mechanism directly from the second side of the component chamber without opening the reaction chamber, so that the maintenance and replacement of the edge protection ring and / or the rotating telescopic mechanism can be carried out when the reaction chamber is isolated from the external environment, thereby improving the maintainability and replaceability of the edge protection ring and the rotating telescopic mechanism, and further reducing the factors affecting the output of semiconductor equipment. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] Figure 1 A schematic diagram of a top view of a semiconductor device provided by an embodiment of the present invention;

[0023] Figure 2 A schematic diagram of the main structure of a semiconductor device provided by an embodiment of the present invention;

[0024] Figure 3 A schematic diagram of a structure in which a reaction chamber and a component chamber provided in an embodiment of the present invention are connected to a chamber support;

[0025] Figure 4 A schematic diagram of a top view of a reaction chamber, a component chamber, a loading chamber and a transfer chamber provided in an embodiment of the present invention;

[0026] Figure 5 A schematic diagram of a top view of an edge protection ring for protecting an edge of a wafer with a positioning notch provided in an embodiment of the present invention;

[0027] Figure 6 A schematic diagram of a top view of an edge protection ring for protecting an edge of an 8-inch flat-edge wafer provided in an embodiment of the present invention;

[0028] Figure 7 A schematic diagram of a top view of an 8-inch flat-edge wafer provided in an embodiment of the present invention;

[0029] Figure 8 for Figure 6 The edge protection ring shown protects Figure 7 A schematic diagram of the top view of the wafer edge is shown;

[0030] Fig. 9 A schematic diagram of a top view of an edge protection ring for protecting an edge of a 6-inch flat-edge wafer provided in an embodiment of the present invention;

[0031] Fig.10 A schematic diagram of a top view of a 6-inch flat-edge wafer carried on a carrying component provided by an embodiment of the present invention;

[0032] Fig.11 for Fig. 9 The edge protection ring shown protects Fig.10 A schematic diagram of the top view of the wafer edge is shown;

[0033] Fig.12 A schematic diagram of the main structure of an edge protection ring and a focus ring provided by an embodiment of the present invention in a semiconductor process;

[0034] Fig.13 A schematic diagram of a top view of a focusing ring provided in an embodiment of the present invention;

[0035] Fig.14 A schematic diagram of the main structure of a focusing semi-ring provided in an embodiment of the present invention;

[0036] Fig.15 A schematic diagram of a partial structure of a positioning groove of a protective half ring provided in an embodiment of the present invention;

[0037] Fig.16 A schematic diagram of a partial structure of a positioning protrusion of a protective half ring provided in an embodiment of the present invention;

[0038] Fig.17 A schematic diagram of the structure of the inner door of the reaction chamber provided by an embodiment of the present invention being closed;

[0039] Fig.18 A schematic diagram of the structure of a reaction chamber with an inner door opened provided by an embodiment of the present invention;

[0040] Fig.19 A schematic diagram of the structure of an inner door provided by an embodiment of the present invention;

[0041] Fig. 20 A schematic diagram of a top view of a semiconductor device provided by an embodiment of the present invention in an initial state of a semiconductor process;

[0042] Fig.21 A schematic diagram of the main structure of a semiconductor device provided by an embodiment of the present invention in an initial state of a semiconductor process;

[0043] Fig. 22 A schematic diagram of a top view of a focusing half ring of a semiconductor device provided by an embodiment of the present invention in a process position of a semiconductor process;

[0044] Fig.23 A schematic diagram of the main structure of a semiconductor device provided by an embodiment of the present invention, in which a focusing half ring is in a process position of a semiconductor process and a protection half ring extends into a reaction chamber;

[0045] Fig.24 A schematic diagram of a top view of a semiconductor device according to an embodiment of the present invention for performing a semiconductor process;

[0046] Fig.25 A schematic diagram of the main structure of a semiconductor device for performing a semiconductor process according to an embodiment of the present invention;

[0047] Fig.26 A schematic top view of the structure of a semiconductor device provided by an embodiment of the present invention with a protective half ring retracted into a component chamber;

[0048] Fig. 27 A schematic diagram of a front view of a semiconductor device provided by an embodiment of the present invention, in which a protective half ring is retracted from a reaction chamber to a component chamber;

[0049] Fig.28 A schematic diagram of a top view of the structure of a semiconductor device provided by an embodiment of the present invention after a semiconductor process is completed;

[0050] Fig.29 A schematic diagram of the main structure of the semiconductor device provided by an embodiment of the present invention after the semiconductor process is completed;

[0051] Fig.30 A schematic diagram of a top view of a semiconductor device provided by an embodiment of the present invention, wherein the protective half ring and the focusing half ring are located in a component chamber and rotated to a second side of the component chamber;

[0052] Fig.31 A schematic diagram of a top view of a semiconductor device provided by an embodiment of the present invention, wherein a protective half ring and a focusing half ring extend into a loading chamber;

[0053] Description of reference numerals:

[0054] 1-reaction chamber; 11-inner cavity; 12-transmission port; 13-inner door; 131-avoidance port; 21-assembly chamber; 22-loading chamber; 23-chamber on-off mechanism; 24-loading on-off mechanism; 3-rotation and telescopic mechanism; 31-rotation mechanism; 32-first telescopic mechanism; 33-second telescopic mechanism; 41-protective semi-ring; 411-first connecting part; 412-positioning groove; 413-positioning convex part; 42-focusing semi-ring; 421-second connecting part; 422-first limiting structure; 423-second limiting structure; 5-transmission chamber; 6-carrying component; 7-chamber bracket; 8-screw; 9-thrust pin; 100-wafer; 101-flat edge wafer. DETAILED DESCRIPTION

[0055] In order to enable those skilled in the art to better understand the technical solution of the present invention, the semiconductor device provided by the present invention is described in detail below with reference to the accompanying drawings.

[0056] like Figure 1 and Figure 2 As shown, an embodiment of the present invention provides a semiconductor device, including a reaction chamber 1, a component chamber 21, a rotating and telescopic mechanism 3 and an edge protection ring, wherein a carrying component 6 for carrying a wafer 100 is arranged in the reaction chamber 1, the component chamber 21 is arranged on the peripheral side of the reaction chamber 1, and a first side of the component chamber 21 is selectively connected to the reaction chamber 1, and a second side of the component chamber 21 is selectively connected to the external environment; the rotating and telescopic mechanism 3 is arranged in the component chamber 21 and is detachably connected to the edge protection ring, the rotating and telescopic mechanism 3 is used to drive the edge protection ring to rotate, and to drive the edge protection ring to extend into the reaction chamber 1, so as to shield and protect the edge of the wafer 100 through the edge protection ring, or to drive the edge protection ring to extend out of the second side of the component chamber 21.

[0057] In practical applications, when a semiconductor process is required, the first side of the component chamber 21 can be connected to the reaction chamber 1, and the second side of the component chamber 21 can be isolated from the external environment. In this way, the edge protection ring can be driven to rotate by means of the rotating and retracting mechanism 3, and the edge protection ring can be driven to extend from the first side of the component chamber 21 into the reaction chamber 1, so that the edge of the wafer 100 carried on the supporting component 6 can be shielded and protected by the edge protection ring, and the reaction chamber 1 can be isolated from the external environment. When the semiconductor process is completed, the rotating and retracting mechanism 3 can drive the edge protection ring to retract into the component chamber 21.

[0058] When it is necessary to maintain or replace the edge protection ring, the first side of the component chamber 21 can be isolated from the reaction chamber 1, and the second side of the component chamber 21 can be connected to the external environment, so that the edge protection ring can be driven to rotate by means of the rotating telescopic mechanism 3, and the edge protection ring can be driven to extend from the second side of the component chamber 21 to the external environment, so that the edge protection ring on the rotating telescopic mechanism 3 can be maintained and replaced directly from the second side of the component chamber 21 without opening the reaction chamber 1, and the reaction chamber 1 can be isolated from the external environment. When it is necessary to maintain or replace the rotating telescopic mechanism 3, the first side of the component chamber 21 can be isolated from the reaction chamber 1, and the second side of the component chamber 21 can be connected to the external environment, so that the rotating telescopic mechanism 3 can be maintained and replaced directly from the second side of the component chamber 21 without opening the reaction chamber 1, and the reaction chamber 1 can be isolated from the external environment.

[0059] The semiconductor device provided by the embodiment of the present invention can isolate the first side of the component chamber 21 from the reaction chamber 1 and connect the second side of the component chamber 21 to the external environment when it is necessary to maintain and replace the edge protection ring. The edge protection ring is driven to rotate by means of the rotating and retracting mechanism 3, and is driven to extend from the second side of the component chamber 21 to the external environment by means of the rotating and retracting mechanism 3. Since the component chamber 21 is arranged on the peripheral side of the reaction chamber 1 and the rotating and retracting mechanism 3 is detachably connected to the edge protection ring, the edge protection ring on the rotating and retracting mechanism 3 can be maintained and replaced directly from the second side of the component chamber 21 without opening the reaction chamber 1, so that the maintenance and replacement of the edge protection ring can be carried out when the reaction chamber 1 is isolated from the external environment. The second side of the component chamber 21 is connected to the external environment, and the first side of the component chamber 21 is isolated from the reaction chamber 1. The rotating telescopic mechanism 3 can also be maintained and replaced directly from the second side of the component chamber 21 without opening the reaction chamber 1, so that the maintenance and replacement of the rotating telescopic mechanism 3 can be carried out when the reaction chamber 1 is isolated from the external environment, so that the maintenance and replacement of the edge protection ring and / or the rotating telescopic mechanism 3 can be carried out directly from the second side of the component chamber 21 without opening the reaction chamber 1, so that the maintenance and replacement of the edge protection ring and / or the rotating telescopic mechanism 3 can be carried out when the reaction chamber 1 is isolated from the external environment, thereby improving the maintainability and replaceability of the edge protection ring and the rotating telescopic mechanism 3, and further reducing the factors affecting the output of semiconductor equipment.

[0060] In practical applications, when the edge protection ring is shielding and protecting the edge of the wafer 100, the edge protection ring can be located above the wafer 100, and there is a gap between the edge protection ring and the wafer 100, that is, the edge protection ring does not contact the wafer 100. In this way, the edge of the wafer 100 can be shielded and protected by the edge protection ring, and the film layer structure on the upper surface of the wafer 100 can be prevented from being damaged by the edge protection ring. In addition, semiconductor process gases such as etching gas can be allowed to contact the edge of the wafer 100 to perform semiconductor processes such as etching on the edge of the wafer 100, and semiconductor process gases such as etching gas can be prevented from being unable to perform semiconductor processes such as etching on the edge of the wafer 100 due to the inability of semiconductor process gases such as etching gas to contact the edge of the wafer 100.

[0061] like Figure 5-Figure 11 As shown, in actual applications, for wafers 100 of different sizes (for example, 6-inch wafers 100 and 8-inch wafers 100), protection can be performed by replacing edge protection rings with different inner diameters. For example, the inner diameter of the edge protection ring can increase as the size of the wafer 100 increases, and decrease as the size of the wafer 100 decreases, while the outer diameters of edge protection rings with different inner diameters can be the same, that is, the radial size of the physical ring body portion of edge protection rings with different inner diameters (that is, the difference between the outer diameter and the inner diameter of the edge protection ring) can be different.

[0062] like Figure 5-Figure 11 As shown, for different types of wafers 100 (for example, flat-edge wafers 101 and positioning notch wafers), protection can be achieved by replacing edge protection rings with different inner edge shapes. For example, for flat-edge wafers 101, the inner edge of the edge protection ring can also have a flat edge corresponding to the flat edge of the flat-edge wafer 101, and for positioning notch wafers, the inner edge of the edge protection ring can be circular.

[0063] In practical applications, the flat edge of the flat-edge wafer 101 and the positioning notch of the positioning notch wafer are both used to position the direction of the wafer 100 in the semiconductor process.

[0064] Optionally, the carrying component 6 may be an electrostatic chuck, which is used to carry the wafer 100 and can adsorb the wafer 100 .

[0065] like Figure 1 and Figure 2As shown, in one embodiment of the present invention, the number of component chambers 21 can be two, the number of rotating and telescopic mechanisms 3 can be two, the edge protection ring can include two protective half rings 41, the two component chambers 21 are relatively arranged on both sides of the reaction chamber 1, and the two rotating and telescopic mechanisms 3 are arranged in the two component chambers 21 one by one, and are detachably connected to the two protective half rings 41 one by one; each rotating and telescopic mechanism 3 is used to drive the corresponding protective half ring 41 to rotate to the first side or the second side of the corresponding component chamber 21, and to drive the corresponding protective half ring 41 to extend into the reaction chamber 1, so as to shield and protect the edge of the wafer 100 through the relative cooperation of the two protective half rings 41, or drive the corresponding protective half ring 41 to extend out of the second side of the corresponding component chamber 21.

[0066] In practical applications, when a semiconductor process is required, the first sides of the two component chambers 21 can be connected to the reaction chamber 1, and the second sides of the two component chambers 21 can be isolated from the external environment. In this way, the corresponding protective half ring 41 can be driven to rotate to the first side of the corresponding component chamber 21 by means of the two rotating and retracting mechanisms 3, and the corresponding protective half ring 41 can be driven to extend from the first side of the corresponding component chamber 21 into the reaction chamber 1, so that the two protective half rings 41 can be relatively close, and then the two protective half rings 41 can be relatively matched to form a ring shape, and then the edge of the wafer 100 carried on the supporting component 6 can be shielded and protected by the cooperation of the two protective half rings 41, and the reaction chamber 1 can be isolated from the external environment. When the semiconductor process is completed, the two rotating and retracting mechanisms 3 can drive the corresponding protective half ring 41 to retract from the first side of the corresponding component chamber 21 to the corresponding component chamber 21.

[0067] When it is necessary to maintain and replace the protective half ring 41, the first sides of the two component chambers 21 can be isolated from the reaction chamber 1, and the second sides of the two component chambers 21 can be connected to the external environment, so that the corresponding protective half ring 41 can be driven to rotate to the second side of the corresponding component chamber 21 by means of the two rotating and telescopic mechanisms 3, and the corresponding protective half ring 41 can be driven to extend from the second side of the corresponding component chamber 21 to the external environment, so that the protective half ring 41 on the two rotating and telescopic mechanisms 3 can be directly maintained and replaced from the second side of the two component chambers 21 without opening the reaction chamber 1, and the reaction chamber 1 can be isolated from the external environment. When it is necessary to maintain and replace the rotating and telescopic mechanisms 3, the first sides of the two component chambers 21 can be isolated from the reaction chamber 1, and the second sides of the two component chambers 21 can be connected to the external environment, so that the rotating and telescopic mechanisms 3 can be directly maintained and replaced from the second side of the two component chambers 21 without opening the reaction chamber 1, and the reaction chamber 1 can be isolated from the external environment.

[0068] like Figure 5 and Figure 6 As shown, optionally, the edge protection ring may further include two first connection parts 411 , the two first connection parts 411 are connected to the two protection half rings 41 one by one, and the two rotating telescopic structures are connected to the corresponding protection half rings 41 through the two first connection parts 411 one by one.

[0069] Optionally, the material of the protective half ring 41 may be ceramic.

[0070] Optionally, the material of the first connection part 411 may be ceramic.

[0071] like Figure 2 , Figure 12-14 As shown, in one embodiment of the present invention, the semiconductor device may also include a replaceable focusing ring, which is located below the edge protection ring and is used to surround the wafer 100 and the supporting component 6 to limit the wafer 100 supported on the supporting component 6. The focusing ring may include two focusing half rings 42, and the two focusing half rings 42 are detachably connected to the two rotating and telescopic mechanisms 3 in a one-to-one manner; each rotating and telescopic mechanism 3 can also be used to drive the corresponding focusing half ring 42 to rotate to the first side or the second side of the corresponding component chamber 21, and to drive the corresponding focusing half ring 42 to extend into the reaction chamber 1, so as to limit the wafer 100 through the relative cooperation of the two focusing half rings 42, or drive the corresponding focusing half ring 42 to extend out of the second side of the corresponding component chamber 21.

[0072] In actual applications, when semiconductor processing is required, the first sides of the two component chambers 21 can be connected to the reaction chamber 1, and the second sides of the two component chambers 21 can be isolated from the external environment. In this way, the corresponding focusing half ring 42 can be driven to rotate to the first side of the corresponding component chamber 21 with the help of the two rotating and telescopic mechanisms 3, and the corresponding focusing half ring 42 can be driven from the first side of the corresponding component chamber 21 into the reaction chamber 1, so that the two focusing half rings 42 can be relatively close to each other, and then the two focusing half rings 42 can be relatively matched to form a ring shape. Thereafter, the wafer 100 is transferred to the supporting component 6. In the process of the wafer 100 being transferred to the supporting component 6, the wafer 100 will be limited in the ring formed by the relative cooperation of the two focusing half rings 42, and then the wafer 100 can be limited by the cooperation of the two focusing half rings 42, and the reaction chamber 1 can be isolated from the external environment. When the semiconductor process is finished, the two rotating and retracting mechanisms 3 can drive the corresponding focusing half ring 42 to retract from the first side of the corresponding component chamber 21 into the corresponding component chamber 21 .

[0073] When it is necessary to maintain and replace the focusing half ring 42, the first sides of the two component chambers 21 can be isolated from the reaction chamber 1, and the second sides of the two component chambers 21 can be connected to the external environment. In this way, the corresponding focusing half ring 42 can be driven to rotate to the second side of the corresponding component chamber 21 with the help of the two rotating and telescopic mechanisms 3, and the corresponding focusing half ring 42 can be driven to extend from the second side of the corresponding component chamber 21 to the external environment, so that the focusing half rings 42 on the two rotating and telescopic mechanisms 3 can be directly maintained and replaced from the second sides of the two component chambers 21 without opening the reaction chamber 1, and the reaction chamber 1 can be isolated from the external environment.

[0074] The semiconductor device provided by the embodiment of the present invention can make the first sides of the two component chambers 21 isolated from the reaction chamber 1 and the second sides of the two component chambers 21 connected to the external environment when it is necessary to maintain and replace the focusing half ring 42. The two rotating and telescopic mechanisms 3 are used to drive the corresponding focusing half ring 42 to rotate to the second side of the corresponding component chamber 21, and the two rotating and telescopic mechanisms 3 are used to drive the corresponding focusing half ring 42 to extend out of the second side of the corresponding component chamber 21. Since the component chamber 21 is arranged on the peripheral side of the reaction chamber 1, and the two rotating and telescopic mechanisms 3 are detachably connected to the corresponding focusing half ring 42, the focusing half ring 42 on the two rotating and telescopic mechanisms 3 can be maintained and replaced directly from the second side of the two component chambers 21 without opening the reaction chamber 1, so that the maintenance and replacement of the focusing half ring 42 can be carried out when the reaction chamber 1 is isolated from the external environment, so that the maintenance and replacement of the focusing half ring 42 can be carried out directly from the second side of the component chamber 21 without opening the reaction chamber 1, thereby improving the maintainability and replaceability of the focusing half ring 42, and further reducing the factors affecting the yield of semiconductor equipment.

[0075] Optionally, each focusing semi-ring 42 has a first limiting structure 422 and a second limiting structure 423. The first limiting structure 422 and the second limiting structure are both semi-ring-shaped and are both located on the inner wall of the focusing semi-ring 42. The first limiting structure 422 is located at the bottom of the second limiting structure 423. The first limiting structure 422 is used to limit the relative position of the focusing semi-ring 42 and the supporting component 6, and the second limiting structure 423 is used to limit the position of the wafer 100.

[0076] In actual applications, when the two focusing half rings 42 cooperate with each other to form a ring shape, the first limiting structure 422 and the second limiting structure 423 of the two focusing half rings 42 can both form a ring shape, and the two first limiting structures 422 can surround the periphery of the supporting component 6 to limit the relative position of the focusing half ring 42 and the supporting component 6, and the two second limiting structures 423 can surround the periphery of the wafer 100 to limit the position of the wafer 100, thereby being able to limit the relative position of the wafer 100 carried on the supporting component 6 and the supporting component 6.

[0077] like Figure 12-14 As shown, optionally, each focusing half ring 42 may be connected to a second connecting portion 421 , and the two rotating telescopic structures are connected to the corresponding focusing half rings 42 via the two second connecting portions 421 in a one-to-one correspondence.

[0078] Optionally, the focusing half ring 42 may be made of ceramic.

[0079] Optionally, the second connection portion 421 may be made of ceramic.

[0080] In actual applications, when the size of the wafer 100 is larger than the size of the carrying surface of the carrying component 6 for carrying the wafer 100, that is, when the edge of the wafer 100 protrudes relative to the edge of the carrying surface of the carrying component 6, the second limiting structure 423 can be concave relative to the carrying surface of the carrying component 6 in the radial direction of the carrying surface of the carrying component 6, so as to accommodate the wafer 100, surround the wafer 100, and limit the wafer 100. When the size of the wafer 100 is smaller than the size of the carrying surface of the carrying component 6 for carrying the wafer 100, that is, when the edge of the carrying surface of the carrying component 6 protrudes relative to the edge of the wafer 100, the second limiting structure 423 can be convex relative to the carrying surface of the carrying component 6 in the radial direction of the carrying surface of the carrying component 6. On the one hand, it can accommodate the wafer 100, surround the wafer 100, and limit the wafer 100. On the other hand, the protruding part of the second limiting structure 423 can be located above the edge part of the carrying surface of the carrying component 6 that protrudes relative to the wafer 100, thereby shielding and protecting the edge part of the carrying surface of the carrying component 6 that protrudes relative to the wafer 100, and avoiding the edge part of the carrying surface of the carrying component 6 that protrudes relative to the wafer 100 from being etched and lost.

[0081] like Figure 1 and Figure 2 As shown, in one embodiment of the present invention, the semiconductor device may also include a loading chamber 22, which is located outside the reaction chamber 1 and is selectively connected to the second side of the component chamber 21; the rotating and telescopic mechanism is also used to drive the protection half ring 41 and / or the focusing half ring 42 to extend from the second side of the component chamber 21 into the loading chamber 22.

[0082] In actual application, when it is necessary to maintain and replace the protection half ring 41 and / or the focusing half ring 42, the first side of the component chamber 21 can be isolated from the reaction chamber 1, and the second side of the component chamber 21 can be connected to the loading chamber 22, and the loading chamber 22 can be connected to the external environment. In this way, the protection half ring 41 and / or the focusing half ring 42 can be driven from the second side of the component chamber 21 into the loading chamber 22 with the help of the rotating telescopic mechanism 3. Since the loading chamber 22 is located outside the reaction chamber 1, the protection half ring 41 and / or the focusing half ring 42 in the loading chamber 22 can be directly maintained and replaced from the side of the loading chamber 22 that is connected to the external environment, and the reaction chamber 1 can be isolated from the external environment. When maintenance and replacement of the protection half ring 41 and / or the focusing half ring 42 are completed, the rotating and telescopic mechanism 3 can drive the protection half ring 41 and / or the focusing half ring 42 to retract from the second side of the component chamber 21 to the inside of the component chamber 21, and can isolate the second side of the component chamber 21 from the loading chamber 22, and can isolate the loading chamber 22 from the external environment.

[0083] When the rotating and telescopic mechanism 3 needs to be maintained and replaced, the first side of the component chamber 21 can be isolated from the reaction chamber 1, and the second side of the component chamber 21 can be connected to the loading chamber 22, and the loading chamber 22 can be connected to the external environment, so that the rotating and telescopic mechanism 3 can be maintained and replaced directly from the side of the loading chamber 22 connected to the external environment without opening the reaction chamber 1, and the reaction chamber 1 can be isolated from the external environment. After the maintenance and replacement of the rotating and telescopic mechanism 3 is completed, the second side of the component chamber 21 can be isolated from the loading chamber 22, and the loading chamber 22 can be isolated from the external environment.

[0084] When semiconductor processing is required, the first side of the component chamber 21 can be connected to the reaction chamber 1, and the loading chamber 22 can be isolated from the component chamber 21, and the loading chamber 22 can be isolated from the external environment, so that the reaction chamber 1 can be isolated from the external environment.

[0085] like Figure 1 As shown, the number of the loading chambers 22 may be two, and the two loading chambers 22 are selectively connected to the second sides of the two component chambers 21 in a one-to-one correspondence.

[0086] Optionally, the semiconductor device may further include a chamber support 7, and the reaction chamber 1, the component chamber 21 and the loading chamber 22 may all be arranged on the chamber support 7, and the component chamber 21 and the loading chamber 22 may be located at the same height.

[0087] Optionally, the reaction chamber 1 , the component chamber 21 and the loading chamber 22 may all be fixed to the chamber support 7 by screws.

[0088] like Figure 1 and Figure 2 As shown, in one embodiment of the present invention, the rotating telescopic mechanism 3 may include a rotating mechanism 31 and a first telescopic mechanism 32. The rotating mechanism 31 is connected to the protective half ring 41 through the first telescopic mechanism 32. The rotating mechanism 31 is used to drive the first telescopic mechanism 32 to rotate to the first side or the second side to drive the protective half ring 41 to move to the first side or the second side. The first telescopic mechanism 32 is used to drive the protective half ring 41 to extend into the reaction chamber 1, or drive the protective half ring 41 to extend from the second side of the component chamber 21 into the loading chamber 22.

[0089] like Figure 2 As shown, in one embodiment of the present invention, the rotating telescopic mechanism 3 may also include a second telescopic mechanism 33, and the rotating mechanism 31 is connected to the focusing half ring 42 through the second telescopic mechanism 33. The rotating mechanism 31 is used to drive the second telescopic mechanism 33 to rotate to the first side or the second side to drive the focusing half ring 42 to move to the first side or the second side, and the second telescopic mechanism 33 is used to drive the focusing half ring 42 to extend into the reaction chamber 1, or drive the focusing half ring to extend from the second side of the component chamber 21 into the loading chamber 22.

[0090] In practical applications, the rotating mechanism 31 can be connected to the first telescopic mechanism 32 and the second telescopic mechanism 33 respectively, and the rotating mechanism 31 can simultaneously drive the first telescopic mechanism 32 and the second telescopic mechanism 33 to rotate to the first side or the second side of the component chamber 21. The first telescopic mechanism 32 can drive the protection semi-ring 41 to extend from the first side of the component chamber 21 into the reaction chamber 1, or drive the protection semi-ring 41 to extend from the second side of the component chamber 21 into the loading chamber 22, or drive the protection semi-ring 41 to retract into the component chamber 21, and the second telescopic mechanism 33 can drive the focusing semi-ring 42 to extend from the first side of the component chamber 21 into the reaction chamber 1, or drive the focusing semi-ring 42 to extend from the second side of the component chamber 21 into the loading chamber 22, or drive the focusing semi-ring 42 to retract into the component chamber 21.

[0091] like Fig.15 and Fig.16 As shown, in one embodiment of the present invention, one end of each protective half ring 41 may be provided with a positioning groove 412, and the other end may be provided with a positioning protrusion 413. The positioning protrusion 413 of one protective half ring 41 is used to be plugged into and matched with the positioning groove 412 of another protective half ring 41 to position the relative fit of the two protective half rings 41.

[0092] Specifically, in the process of the two protective half rings 41 being relatively close to each other to form a ring shape, the positioning protrusion 413 at one end of one protective half ring 41 can be inserted into the positioning groove 412 at one end of the other protective half ring 41, so that the two protective half rings 41 are relatively positioned by inserting the two positioning protrusions 413 of the two protective half rings 41 into the two positioning grooves 412 of the two protective half rings 41 one by one.

[0093] like Fig.15 and Fig.16 As shown, in one embodiment of the present invention, the groove wall of the positioning groove 412 can be inclined, and the radial dimension of the positioning groove 412 gradually decreases from the groove mouth to the groove bottom, and the groove bottom surface of the positioning groove 412 is an arc surface, the side wall of the positioning protrusion 413 is inclined, and the radial dimension of the positioning protrusion 413 gradually increases from the top of the positioning protrusion 413 away from the protective semi-ring 41 to the bottom end close to the protective semi-ring 41, and the top surface of the positioning protrusion 413 is an arc surface.

[0094] Specifically, the radial dimension of the notch of the positioning groove 412 is greater than the radial dimension of the bottom of the positioning groove 412, and the radial dimension of the positioning groove 412 gradually decreases from the notch of the positioning groove 412 to the bottom of the positioning groove 412, the groove wall of the positioning groove 412 is an inclined surface, and the distance between the groove wall of the positioning groove 412 and the axis of the positioning groove 412 gradually decreases from the notch of the positioning groove 412 to the bottom of the positioning groove 412, that is, from the notch of the positioning groove 412 to the bottom of the positioning groove 412, the groove wall of the positioning groove 412 gradually approaches the axis of the positioning groove 412. The end of the positioning protrusion 413 away from the protective half ring 41 is the top end of the positioning protrusion 413, and the end of the positioning protrusion 413 close to the protective half ring 41 is the bottom end of the positioning protrusion 413. The radial dimension of the top end of the positioning protrusion 413 is smaller than the radial dimension of the bottom end of the positioning protrusion 413, and the radial dimension of the positioning protrusion 413 gradually increases from the end to the bottom end of the positioning protrusion 413. The side wall of the positioning protrusion 413 is an inclined surface, and the distance between the side wall of the positioning protrusion 413 and the axis of the positioning protrusion 413 gradually increases from the top end of the positioning protrusion 413 to the bottom end of the positioning protrusion 413. That is to say, from the top end of the positioning protrusion 413 to the bottom end of the positioning protrusion 413, the side wall of the positioning protrusion 413 gradually moves away from the axis of the positioning protrusion 413.

[0095] Optionally, the radius of the arc-shaped bottom surface of the positioning groove 412 may be 0.4 mm.

[0096] Optionally, the radius corresponding to the arc-shaped top surface of the positioning protrusion 413 may be 0.2 mm.

[0097] like Fig.15 and Fig.16As shown, optionally, the depth of the positioning groove 412, the radial dimension of the groove opening, the inclination angle of the groove wall, and the curvature of the groove bottom surface are correspondingly greater than the length of the positioning protrusion 413, the radial dimension of the bottom end, the inclination angle of the side wall, and the curvature of the top surface, and the ratio of the difference between the larger and smaller values ​​of the corresponding two parameters to the larger value of the corresponding two parameters can be 8.8%-12.7%.

[0098] For example, the depth of the positioning groove 412 is greater than the length of the positioning protrusion 413, and the ratio of the difference between the depth of the positioning groove 412 and the length of the positioning protrusion 413 to the depth of the positioning groove 412 is 8.8%-12.7%, which can also be called a tolerance threshold.

[0099] Optionally, the chamfer at the junction of the groove bottom surface and the groove wall may be greater than or equal to the chamfer at the junction of the top end surface of the positioning protrusion 413 and the side wall.

[0100] Optionally, when the chamfer at the junction of the groove bottom surface and the groove wall is greater than the chamfer at the junction of the top surface of the positioning protrusion 413 and the side wall, the ratio of the difference between the larger and smaller values ​​of the two parameters to the larger value of the two parameters can be 8.8%-12.7%. This ratio can also be called a tolerance threshold.

[0101] By designing the ratio of the difference between the larger and smaller values ​​of the two corresponding parameters to the larger value of the two corresponding parameters to be 8.8%-12.7%, on the one hand, it can avoid the positioning groove 412 and the positioning protrusion 413 from colliding and producing particles when plugged together due to the tolerance threshold of their corresponding parameters being too small, causing the wafer 100 or the electrostatic chuck to be contaminated by particles, thereby causing problems with the morphology of the wafer 100 after the semiconductor process, or affecting the adsorption function of the electrostatic chuck on the wafer 100, thereby improving the use stability of the semiconductor device. On the other hand, it can avoid the positioning groove 412 and the positioning protrusion 413 from having too large a gap between the two due to the tolerance threshold of their corresponding parameters being too large, causing the plasma in the semiconductor device to etch the edge of the wafer 100 through the gap between the positioning groove 412 and the positioning protrusion 413, thereby losing the function of the edge protection ring.

[0102] Optionally, the depth of the positioning groove 412 may be 2.26 mm.

[0103] Optionally, the length of the positioning protrusion 413 may be 2.06 mm.

[0104] Optionally, the radial dimension of the notch may be 1.57 mm.

[0105] Optionally, the radial dimension of the bottom end may be 1.37 mm.

[0106] like Figure 1 , Figure 2 , Figure 17-Figure 19 As shown, in one embodiment of the present invention, an inner cavity 11 may be provided in the reaction chamber 1, and the supporting component 6 may be provided in the inner cavity 11. A transfer port 12 and an inner door 13 are provided on a side of the inner cavity 11 opposite to the first side of the component chamber 21. The transfer port 12 is used for the rotating telescopic mechanism 3, the protective semi-ring 41 and the focusing semi-ring 42 to enter and exit. The inner door 13 is provided corresponding to the transfer port 12 and can be translated relative to the transfer port 12 to open or close the transfer port 12. The inner door 13 is provided with an avoidance port 131 with one side being open for the rotating telescopic mechanism 3 to pass through.

[0107] In actual application, before the semiconductor process starts, the inner door 13 translates relative to the transfer port 12 to open the transfer port 12, so that the rotating telescopic mechanism 3 can drive the protection half ring 41 and the focusing half ring 42 to extend into the inner cavity 11 through the transfer port 12. During the semiconductor process, the inner door 13 translates relative to the transfer port 12 to close the transfer port 12 to improve the sealing of the inner cavity 11. At this time, the rotating telescopic mechanism 3 passes through the avoidance port 131 with an open side set on the inner door 13 to avoid interference between the inner door 13 and the rotating telescopic mechanism 3. After the semiconductor process is completed, the inner door 13 translates relative to the transfer port 12 to open the transfer port 12, so that the rotating telescopic mechanism 3 can drive the protection half ring 41 and the focusing half ring 42 to retract into the component chamber 21 through the transfer port 12.

[0108] like Figure 1-Figure 4 As shown, in one embodiment of the present invention, the semiconductor device may further include a chamber on-off mechanism 23 and / or a loading on-off mechanism 24, wherein the chamber on-off mechanism 23 is disposed on the first side of the component chamber 21, and is used to control the on-off of the first side of the component chamber 21 and the reaction chamber 1, and the loading on-off mechanism 24 is disposed on the second side of the component chamber 21 or on the side of the loading chamber 22 opposite to the second side of the component chamber 21, and is used to control the on-off of the loading chamber 22 and the second side of the component chamber 21.

[0109] That is, the first side of the component chamber 21 may be provided with a chamber on-off mechanism 23, by means of which the first side of the component chamber 21 and the reaction chamber 1 may be selectively connected and disconnected. The second side of the component chamber 21 or the side of the loading chamber 22 opposite to the second side of the component chamber 21 may be provided with a loading on-off mechanism 24, by means of which the second side of the component chamber 21 and the loading chamber 22 may be selectively connected and disconnected.

[0110] Optionally, the chamber on-off mechanism 23 may include a chamber gate valve.

[0111] Optionally, the loading on-off mechanism 24 may include a loading gate valve.

[0112] like Figure 3 As shown, optionally, the component chamber 21 and the reaction chamber 1 can be fixed by screws 8, and a sealing groove and an inductive coil groove can be provided between the two mating surfaces of the component chamber 21 and the reaction chamber 1, a sealing ring can be provided in the sealing groove, and an inductive coil can be provided in the inductive coil groove. The sealing coil is used to seal the two mating surfaces between the component chamber 21 and the reaction chamber 1, and the inductive coil is used for grounding.

[0113] The sealing ring can improve the sealing between the component chamber 21 and the reaction chamber 1, and the electromagnetic coil can improve the stability of the radio frequency circuit of the semiconductor device.

[0114] like Figure 1 As shown, optionally, the semiconductor device may also include a transfer chamber 5, which can be selectively connected and disconnected with the reaction chamber 1, and a transfer component (not shown in the figure) is arranged in the transfer chamber 5, which is used to transfer the wafer 100 from the transfer chamber 5 to the reaction chamber 1, or to transfer the wafer 100 from the reaction chamber 1 to the transfer chamber 5.

[0115] In actual applications, before the semiconductor process, the wafer 100 can be located in the transfer chamber 5, the transfer chamber 5 and the reaction chamber 1 can be in a connected state, and the transfer component in the transfer chamber 5 can transfer the wafer 100 from the transfer chamber 5 to the reaction chamber 1. During the semiconductor process, the transfer chamber 5 and the reaction chamber 1 can be in a separated state. After the semiconductor process is completed, the transfer chamber 5 and the reaction chamber 1 can be in a connected state, and the transfer component in the transfer chamber 5 can transfer the wafer 100 from the reaction chamber 1 to the transfer chamber 5.

[0116] like Figure 1 and Figure 2 As shown, optionally, the semiconductor device may further include a ejector pin 9 mechanism, which includes a lifting mechanism and a plurality of ejector pins 9, wherein the plurality of ejector pins 9 are arranged through the supporting component 6 and are arranged at intervals along a circumferential direction, and the lifting mechanism is connected to the plurality of ejector pins 9 for driving the plurality of ejector pins 9 to lift and lower.

[0117] In practical applications, the lifting mechanism drives the plurality of ejector pins 9 to move upward and downward, and the plurality of ejector pins 9 cooperate with the transmission component to realize the transfer of the wafer 100 between the transmission component and the carrying component 6 .

[0118] Optionally, the semiconductor device may further include a first gas pumping component, a second gas pumping component, and a third gas pumping component, wherein the first gas pumping component is connected to the reaction chamber 1 and is used to evacuate the reaction chamber 1, the second gas pumping component is connected to the component chamber 21 and is used to evacuate the component chamber 21, and the third gas pumping component is connected to the transfer chamber 5 and is used to evacuate the transfer chamber 5. In addition, the semiconductor device may further include a fourth gas pumping component, which is connected to the loading chamber 22 and is used to evacuate the loading chamber 22. Of course, since the volume of the component chamber 21 and the loading chamber 22 are both small, the two may share the second gas pumping component and omit the fourth gas pumping component.

[0119] Optionally, the first air pumping component, the second air pumping component and the third air pumping component may all be dry pumps.

[0120] A specific use method of the semiconductor device provided by the embodiment of the present invention for performing a semiconductor process is introduced below. However, the use method of the semiconductor device provided by the embodiment of the present invention for performing a semiconductor process is not limited thereto.

[0121] like Fig. 20 and Fig.21 As shown, before the start of the semiconductor process, the rotating telescopic mechanism 3 can be in a retracted state, the protective half ring 41 and the focusing half ring 42 can be in an initial state (that is, the protective half ring 41 and the focusing half ring 42 are both retracted into the component chamber 21 and rotated to the first side of the component chamber 21), a plurality of ejector pins 9 are all in a low position, the wafer 100 is located in the transfer chamber 5 and is carried by the transfer component, at this time, the inner door 13, the chamber on-off mechanism 23 and the loading on-off mechanism 24 can all be in a closed state, and the reaction chamber 1, the transfer chamber 5, the component chamber 21 and the loading chamber 22 can all be in a vacuum state.

[0122] Afterwards, if Fig. 22 and Fig.23 As shown, the inner door 13 and the chamber on-off mechanism 23 can be opened, the rotating and telescopic mechanism 3 can drive the focusing half ring 42 to extend from the first side of the component chamber 21 into the reaction chamber 1, and make the two focusing half rings 42 relatively cooperate to surround the supporting component 6, and the protective half ring 41 can still be in the initial state. Afterwards, the wafer 100 can be transferred from the transfer chamber 5 to the reaction chamber 1 by the transfer component, and the multiple ejector pins 9 can rise to a high position to support the wafer 100 on the transfer component. Afterwards, the transfer component can be retracted into the transfer chamber 5.

[0123] Afterwards, if Fig.24 and Fig.25As shown, a plurality of ejector pins 9 can support the wafer 100 to descend to a low position so that the wafer 100 is carried on the carrying component 6. In the process of the wafer 100 descending to be carried on the carrying component 6, it can be limited by two relatively matched focusing semi-rings 42. Afterwards, the rotating telescopic mechanism 3 can drive the protective semi-ring 41 to extend from the first side of the component chamber 21 into the reaction chamber 1, and make the two protective semi-rings 41 relatively matched. At this time, the two relatively matched protective semi-rings 41 are located above the wafer 100 to shield and protect the edge of the wafer 100, and there is a gap between the two relatively matched protective semi-rings 41 and the wafer 100. Afterwards, the inner door 13 can be closed, and the semiconductor process can be carried out after the inner door 13 is closed.

[0124] Afterwards, if Fig.26 and Fig. 27 As shown, when the semiconductor process is completed, the inner door 13 can be opened, and the rotating and retracting mechanism 3 can drive the protective half ring 41 to retract from the first side of the component chamber 21 to the inside of the component chamber 21, and put the protective half ring 41 in an initial state, and then, a plurality of ejector pins 9 can support the wafer 100 to rise to a high position.

[0125] Afterwards, if Fig.28 and Fig.29 As shown, the wafer 100 can be transferred from the reaction chamber 1 to the transfer chamber 5 by the transfer component, and then the multiple ejector pins 9 can be lowered from the high position to the low position, and the rotating telescopic mechanism 3 can drive the focusing half ring 42 to retract from the first side of the component chamber 21 to the component chamber 21, and put the focusing half ring 42 in the initial state, and then the chamber on-off mechanism 23 can be closed.

[0126] A specific usage of the semiconductor device replacement protection half ring 41 and the focusing half ring 42 provided in an embodiment of the present invention is introduced below. However, the usage of the semiconductor device replacement protection half ring 41 and the focusing half ring 42 provided in an embodiment of the present invention is not limited to this.

[0127] like Fig.30 As shown, when the protection half ring 41 and the focusing half ring 42 need to be replaced, the rotating and telescopic mechanism 3 can drive the protection half ring 41 and the focusing half ring 42 to rotate to the first side of the component chamber 21, and the component chamber 21 can be inflated to the atmospheric state. At this time, the chamber on-off mechanism 23 can be closed to keep the reaction chamber 1 in a vacuum state.

[0128] Afterwards, if Fig.31As shown, after the component chamber 21 is inflated to the atmospheric state, the loading on-off mechanism 24 can be opened, and the rotating and telescopic mechanism 3 can drive the protection half ring 41 and the focusing half ring 42 to extend from the second side of the component chamber 21 into the loading chamber 22. At this time, the loading chamber 22 is in the atmospheric state, and the loading chamber 22 can be opened to connect the loading chamber 22 with the external environment to replace the protection half ring 41 and the focusing half ring 42.

[0129] Afterwards, if Fig.30 As shown, after the protection half ring 41 and the focusing half ring 42 are replaced, the loading chamber 22 can be closed to isolate the loading chamber 22 from the external environment, and the rotating and telescopic mechanism 3 can drive the replaced protection half ring 41 and the focusing half ring 42 to retract from the second side of the component chamber 21 to the component chamber 21. After that, the loading on-off mechanism 24 can be closed, the component chamber 21 can be evacuated to a vacuum state, and the rotating and telescopic mechanism 3 can drive the protection half ring 41 and the focusing half ring 42 to rotate to the first side of the component chamber 21, that is, the protection half ring 41 and the focusing half ring 42 are both in the initial state.

[0130] In summary, the semiconductor device provided by the embodiment of the present invention can improve the maintainability and replaceability of the edge protection ring and the rotating and retracting mechanism 3, thereby reducing the factors that affect the yield of the semiconductor device.

[0131] It is to be understood that the above embodiments are merely exemplary embodiments used to illustrate the principles of the present invention, but the present invention is not limited thereto. For those skilled in the art, various modifications and improvements can be made without departing from the spirit and essence of the present invention, and these modifications and improvements are also considered to be within the scope of protection of the present invention.

Claims

1. A semiconductor device, characterized in that: The device comprises a reaction chamber, a component chamber, a rotating and retracting mechanism and an edge protection ring, wherein a bearing component for bearing a wafer is arranged in the reaction chamber, the component chamber is arranged on the peripheral side of the reaction chamber, and a first side of the component chamber is selectively connected to the reaction chamber, and a second side of the component chamber is selectively connected to the external environment; The rotating and telescopic mechanism is arranged in the component chamber and is detachably connected to the edge protection ring. The rotating and telescopic mechanism is used to drive the edge protection ring to rotate and to drive the edge protection ring to extend into the reaction chamber so as to shield and protect the edge of the wafer through the edge protection ring, or to drive the edge protection ring to extend out of the second side of the component chamber.

2. The semiconductor device according to claim 1, wherein: The number of the component chambers is two, the number of the rotating and telescopic mechanisms is two, the edge protection ring includes two protective half rings, the two component chambers are relatively arranged on both sides of the reaction chamber, the two rotating and telescopic mechanisms are arranged in the two component chambers one by one, and are detachably connected to the two protective half rings one by one; Each of the rotating and telescopic mechanisms is used to drive the corresponding protective half ring to rotate to the first side or the second side of the corresponding component chamber, and to drive the corresponding protective half ring to extend into the reaction chamber, so that the edge of the wafer can be shielded and protected by the relative cooperation of the two protective half rings, or to drive the corresponding protective half ring to extend out of the second side of the corresponding component chamber.

3. The semiconductor device according to claim 2, wherein: The semiconductor device further comprises a replaceable focusing ring, which is located below the edge protection ring and is used to surround the wafer and the supporting component to limit the position of the wafer supported on the supporting component, and the focusing ring comprises two focusing half rings, which are detachably connected to the two rotating and telescopic mechanisms in a one-to-one correspondence; Each of the rotating and telescopic mechanisms is also used to drive the corresponding focusing half ring to rotate to the first side or the second side of the corresponding component chamber, and to drive the corresponding focusing half ring to extend into the reaction chamber, so as to limit the wafer through the relative cooperation of the two focusing half rings, or to drive the corresponding focusing half ring to extend out of the second side of the corresponding component chamber.

4. The semiconductor device according to claim 3, characterized in that The semiconductor device further comprises a loading chamber, the loading chamber being located outside the reaction chamber and selectively connected to the second side of the component chamber in an on-off manner; The rotating and telescopic mechanism is also used to drive the protective half ring and / or the focusing half ring to extend from the second side of the component chamber into the loading chamber.

5. The semiconductor device according to claim 4, characterized in that The rotating telescopic mechanism includes a rotating mechanism and a first telescopic mechanism. The rotating mechanism is connected to the protective half ring through the first telescopic mechanism. The rotating mechanism is used to drive the first telescopic mechanism to rotate to the first side or the second side to drive the protective half ring to move to the first side or the second side. The first telescopic mechanism is used to drive the protective half ring to extend into the reaction chamber, or drive the protective half ring to extend from the second side of the component chamber into the loading chamber.

6. The semiconductor device according to claim 5, characterized in that The rotating telescopic mechanism also includes a second telescopic mechanism, and the rotating mechanism is connected to the focusing half ring through the second telescopic mechanism. The rotating mechanism is used to drive the second telescopic mechanism to rotate to the first side or the second side to drive the focusing half ring to move to the first side or the second side. The second telescopic mechanism is used to drive the focusing half ring to extend into the reaction chamber, or drive the focusing half ring to extend from the second side of the component chamber into the loading chamber.

7. The semiconductor device according to claim 2, wherein: Each of the protective half rings is provided with a positioning groove at one end and a positioning protrusion at the other end. The positioning protrusion of one protective half ring is used to be plugged into and matched with the positioning groove of another protective half ring to position the relative matching of the two protective half rings.

8. The semiconductor device according to claim 7, wherein: The groove wall of the positioning groove is inclined, and the radial dimension of the positioning groove gradually decreases from the groove mouth to the groove bottom, and the groove bottom surface of the positioning groove is an arc surface. The side wall of the positioning protrusion is inclined, and the radial dimension of the positioning protrusion gradually increases from the top end of the positioning protrusion away from the protective semi-ring to the bottom end close to the protective semi-ring, and the top end surface of the positioning protrusion is an arc surface.

9. The semiconductor device according to claim 3, wherein: An inner cavity is provided in the reaction chamber, the bearing component is provided in the inner cavity, a transfer port and an inner door are provided on a side of the inner cavity opposite to the first side of the component chamber, the transfer port is used for the rotating and telescopic mechanism, the protective semi-ring and the focusing semi-ring to enter and exit, the inner door is provided corresponding to the transfer port and can be translated relative to the transfer port to open or close the transfer port, and the inner door is provided with an avoidance port with one side being an opening for the rotating and telescopic mechanism to pass through.

10. The semiconductor device according to claim 4, wherein: The semiconductor device also includes a chamber on-off mechanism and / or a loading on-off mechanism. The chamber on-off mechanism is arranged on the first side of the component chamber to control the connection between the first side of the component chamber and the reaction chamber. The loading on-off mechanism is arranged on the second side of the component chamber or on the side of the loading chamber opposite to the second side of the component chamber to control the connection between the loading chamber and the second side of the component chamber.

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