Sweeping toxic and corrosive materials from substrate processing chamber

Abstract

A system for performing preventive maintenance of a processing chamber of a substrate processing system using atmosphere includes a first plurality of valves and manifolds, a second plurality of valves and manifolds, and a controller. The first plurality of valves and manifolds are located downstream of the process chamber. The second plurality of valves and manifolds are located upstream of the process chamber. The controller is configured to perform the preventive maintenance by: initially sweeping the processing chamber and the first plurality of valves and manifolds while maintaining a pressure in the processing chamber between a first pressure and a second pressure, the second pressure greater than the first pressure and less than atmospheric pressure; and subsequently sweeping the process chamber and the second plurality of valves and manifolds while maintaining the pressure in the process chamber between the first pressure and a third pressure, the third pressure being less than the first pressure.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS

[0001] This application claims the benefit of U.S. Provisional Application No. 63 / 414,703, filed on October 10, 2022. The entire disclosure of the above application is incorporated herein by reference. Technical Field

[0002] The present disclosure relates generally to substrate processing systems and, more particularly, to removing toxic and corrosive materials from substrate processing chambers. Background Art

[0003] The background description provided herein is for the purpose of generally presenting the context of the present disclosure. The work of the currently designated inventors within the scope described in this background section and aspects of the specification that were not determined to be prior art at the time of filing the application are neither explicitly nor implicitly admitted to be prior art against the present disclosure.

[0004] In substrate processing systems, a variety of chemicals are used to process substrates in a processing chamber. Some chemicals use toxic and corrosive elements and / or compounds containing elements such as fluorine. The processing chamber is continuously cleaned during substrate processing using a vacuum pump coupled to the processing chamber. However, the processing chamber needs to be cleaned regularly to remove toxic and corrosive materials. These cleaning processes require manual intervention and testing, thereby causing health hazards and also prolonging the cleaning process. Summary of the invention

[0005] A system for performing preventive maintenance of a processing chamber of a substrate processing system using an atmosphere comprises: a first plurality of valves and manifolds, a second plurality of valves and manifolds, and a controller. The first plurality of valves and manifolds are located downstream of the processing chamber of the substrate processing system. The second plurality of valves and manifolds are located upstream of the processing chamber of the substrate processing system. The controller is configured to perform the preventive maintenance of the processing chamber using an atmosphere by: initially purging the processing chamber and the first plurality of valves and manifolds while maintaining a pressure in the processing chamber between a first pressure and a second pressure, the second pressure being greater than the first pressure and less than atmospheric pressure; and subsequently purging the processing chamber and the second plurality of valves and manifolds while maintaining a pressure in the processing chamber between the first pressure and a third pressure, the third pressure being less than the first pressure.

[0006] In additional features, the controller is configured to remove hydrogen fluoride from the process chamber, the first plurality of valves and manifolds, and the second plurality of valves and manifolds by performing the preventative maintenance of the process chamber using the atmosphere.

[0007] In additional features, the controller is configured to perform the initial sweep for a longer period of time than the subsequent sweep.

[0008] In additional features, the controller is configured to, during the initial purge, open the first plurality of valves and close the second plurality of valves while maintaining a pressure in the process chamber between the first pressure and the second pressure.

[0009] In additional features, the controller is configured to, during the subsequent purge, open the second plurality of valves and close the first plurality of valves while maintaining a pressure in the process chamber between the first pressure and the third pressure.

[0010] In additional features, the controller is configured to: perform the initial cleaning and the subsequent cleaning at a first time; perform the initial cleaning and the subsequent cleaning at a second time after the first time; and perform the subsequent cleaning only one or more times between the first time and the second time.

[0011] In still other features, a method of performing preventive maintenance of a processing chamber of a substrate processing system using an atmosphere includes initially opening a first plurality of valves located downstream of the processing chamber and closing a second plurality of valves located upstream of the processing chamber to perform the preventive maintenance while maintaining a pressure in the processing chamber between a first pressure and a second pressure, the second pressure being greater than the first pressure and less than atmospheric pressure. The method includes purging the processing chamber and the first plurality of valves using the atmosphere to perform the preventive maintenance while maintaining a pressure in the processing chamber between the first pressure and the second pressure. The method includes subsequently closing the first plurality of valves and opening the second plurality of valves to perform the preventive maintenance while maintaining a pressure in the processing chamber between the first pressure and a third pressure, the third pressure being less than the first pressure. The method includes purging the processing chamber and the second plurality of valves using the atmosphere to perform the preventive maintenance while maintaining a pressure in the processing chamber between the first pressure and the third pressure.

[0012] In additional features, purging the process chamber, the first plurality of valves, and the second plurality of valves includes removing hydrogen fluoride from the process chamber, the first plurality of valves, the second plurality of valves, and a manifold associated with the first plurality of valves and the second plurality of valves.

[0013] In additional features, the method further includes purging the process chamber and the first plurality of valves for a longer period of time than purging the process chamber and the second plurality of valves.

[0014] In additional features, the method further includes: initially performing a first stage of purging the process chamber, the first plurality of valves, and the second plurality of valves at a first time. The method further includes: subsequently performing a second stage of purging the process chamber, the first plurality of valves, and the second plurality of valves at a second time. The method further includes: performing purging the process chamber and the second plurality of valves only one or more times between the first time and the second time.

[0015] In yet other features, a system for performing preventive maintenance of a processing chamber of a substrate processing system using an atmosphere comprises: a first plurality of valves and a manifold, a second plurality of valves and a manifold, a first valve, a throttle valve and a second valve, a third valve, a vacuum pump, and a controller. The first plurality of valves and the manifold are located downstream of the processing chamber. The second plurality of valves and the manifold are located upstream of the processing chamber. The first valve is configured to selectively allow the atmosphere to flow into the processing chamber. The throttle valve and the second valve are connected in series to each other and to the processing chamber. The third valve is connected across the throttle valve and the second valve. The vacuum pump is connected to the throttle valve and the second valve and the third valve. The controller is configured to perform the preventive maintenance by controlling the vacuum pump, the throttle valve, and the first, second and third valves to: initially open the first plurality of valves and close the second plurality of valves while maintaining the pressure in the process chamber between a first pressure and a second pressure, the second pressure being greater than the first pressure and less than the atmospheric pressure; purge the process chamber and the first plurality of valves and the manifold using the atmosphere; subsequently close the first plurality of valves and open the second plurality of valves while maintaining the pressure in the process chamber between the first pressure and a third pressure, the third pressure being less than the first pressure; and purge the process chamber and the second plurality of valves and the manifold using the atmosphere.

[0016] In additional features, the controller is configured to remove hydrogen fluoride from the process chamber, the first plurality of valves and manifold, and the second plurality of valves and manifold.

[0017] In additional features, the controller is configured to purge the process chamber and the first plurality of valves and manifold for a longer period of time than purging the process chamber and the second plurality of valves and manifold.

[0018] In additional features, the controller is configured to: initially perform a first stage of cleaning the process chamber, the first plurality of valves and manifold, and the second plurality of valves and manifold at a first time; subsequently perform a second stage of cleaning the process chamber, the first plurality of valves and manifold, and the second plurality of valves and manifold at a second time; and between the first time and the second time, perform cleaning of the process chamber and the second plurality of valves and manifold only one or more times.

[0019] In additional features, the controller is configured to: in response to the pressure in the processing chamber being greater than or equal to the first pressure, close the throttle valve and the second valve, and open the third valve; and in response to the pressure in the processing chamber being less than the first pressure, open the throttle valve and the second valve, and close the third valve.

[0020] In additional features, the controller is configured to: close the first plurality of valves and the second plurality of valves, the throttle valve, and the first valve, the second valve, and the third valve; open the throttle valve and the second valve; use the vacuum pump to pump the processing chamber to a first threshold pressure that is less than the first pressure and greater than the third pressure; open the first valve and the first plurality of valves; continue to pump the processing chamber and the first plurality of valves for a first predetermined time period; after the first predetermined time period, close the first valve; and use the vacuum pump to pump the processing chamber to the first threshold pressure.

[0021] In additional features, the controller is configured to, after the first predetermined time period: close the first plurality of valves and open the second plurality of valves; open the first valve and the third valve; a) pump the process chamber using the vacuum pump with the throttle valve set to a second threshold pressure greater than the first threshold pressure and less than the first pressure; b) in response to the pressure in the process chamber reaching the second threshold pressure, pump the process chamber using the vacuum pump with the throttle valve set to the first threshold pressure; repeat a) and b) a predetermined number of times or for a second predetermined time period less than the first predetermined time period; and close the first plurality of valves and the second plurality of valves, the throttle valve, and the first valve, the second valve, and the third valve.

[0022] In additional features, the controller is configured to: purge the process chamber and the first plurality of valves and manifolds and the second plurality of valves and manifolds at a first time; and purge the process chamber and the first plurality of valves and manifolds and the second plurality of valves and manifolds at a second time after the first time. The controller is configured to purge the process chamber and the first plurality of valves and manifold and the second plurality of valves and manifold between the first time and the second time: close the first plurality of valves and the second plurality of valves, the throttle valve, and the first, second and third valves; open the throttle valve and the second valve; pump the process chamber to a first threshold pressure less than the first pressure and greater than the third pressure using the vacuum pump; close the throttle valve and the second valve; open the second plurality of valves; open the first valve and the third valve; a) pump the process chamber using the vacuum pump with the throttle valve set to a second threshold pressure greater than the first threshold pressure and less than the first pressure; b) in response to the pressure in the process chamber reaching the second threshold pressure, pump the process chamber using the vacuum pump with the throttle valve set to the first threshold pressure; repeat a) and b) a predetermined number of times or for a predetermined period of time; and close the first plurality of valves and the second plurality of valves, the throttle valve, and the first, second and third valves.

[0023] Further scope of applicability of the present disclosure will become apparent from the detailed description, claims and drawings.The detailed description and specific examples are intended for purposes of illustration only and are not intended to limit the scope of the disclosure. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] The present disclosure will be more fully understood from the detailed description and accompanying drawings, in which:

[0025] Figure 1 An example of a substrate processing system including an example of a processing chamber and examples of high pressure valves and low pressure valves is shown;

[0026] Figure 2 The invention discloses a method for Figure 1 A system for cleaning hydrogen fluoride (HF) in a processing chamber and a high-pressure valve and a low-pressure valve in a substrate processing system;

[0027] Figure 3 and 4 shows operations performed during purging of HF from a process chamber and high and low pressure valves in accordance with the present disclosure;

[0028] Figure 5 A method of purging HF from a process chamber and high and low pressure valves according to the present disclosure is shown;

[0029] Figure 6 shows the use of Figure 1 and 2 A method for pumping a process chamber using a combination of a roughing valve, a throttle valve and a gate valve of the system shown; and

[0030] Figure 7 A method of performing only a fine sweep portion of HF sweep according to the present disclosure is shown when HF sweep is frequently performed.

[0031] Among the drawings, reference numerals may be repeated to identify similar and / or identical elements. DETAILED DESCRIPTION

[0032] The process chamber is subject to periodic cleaning (e.g., during preventive maintenance). Some processes performed in the process chamber during substrate processing use chemicals containing fluorine. Although the process chamber is repeatedly purged during substrate processing, a certain amount of fluorine remains in the process chamber, as well as in the valves and associated manifolds upstream and downstream of the process chamber, which will be described in detail below. After the process chamber is closed and cleaned during preventive maintenance to remove the residual fluorine, any residual fluorine remaining in the process chamber and in the valves and associated manifolds needs to be removed from the process chamber. In order to remove any residual fluorine from the process chamber and the valves and associated manifolds, the atmosphere is allowed to enter the process chamber during preventive maintenance while the contents of the process chamber are pumped out through an exhaust system.

[0033] During preventive maintenance, any residual fluorine left in the process chamber and valves and associated manifolds reacts with moisture in the atmosphere and forms hydrogen fluoride (HF), which is hazardous (i.e., toxic and corrosive) if inhaled or touched. The procedure of admitting air into the process chamber and extracting the HF-containing contents of the process chamber during preventive maintenance is referred to as HF purging. The systems and methods of the present disclosure for purging hazardous materials from a process chamber during preventive maintenance are distinct (i.e., different and separate) from the purging of the process chamber performed during normal operation of the process chamber (e.g., during substrate processing).

[0034] Throughout this disclosure, HF is used merely as an example of a toxic and corrosive (i.e., hazardous) material that may be removed from a process chamber and valves and associated manifolds using a purge performed during preventive maintenance in accordance with the present disclosure. Depending on the chemistry used in the process performed during normal operation of the process chamber (e.g., during substrate processing), the systems and methods of the present disclosure may be used to remove any other toxic and corrosive residual materials that may remain in the process chamber and valves and associated manifolds after the chemistry has been purged during normal operation and that may form hazardous materials when reacting with the air used in the purge performed during preventive maintenance.

[0035] For example, other materials may include hydrogen chloride (HCL), which may be formed when chlorine-containing chemicals are used during normal operation and when any residual chlorine reacts with moisture in the air to form HCL during preventive maintenance. Generally speaking, materials such as HF and HCL are referred to as halogen-containing residues and are examples of hazardous materials that may be removed from process chambers and from valves and associated manifolds using purging performed during preventive maintenance in accordance with the present disclosure. However, the present disclosure is not limited to the removal of halogen-containing residues, but may be applicable to the removal of any hazardous materials that may be formed in process chambers and in valves and associated manifolds due to the reaction of residual materials with air used in purging performed during preventive maintenance, which residual materials may remain in the process chambers and in the valves and associated manifolds and come from chemicals used during normal operation that were not purged away.

[0036] After performing HF cleaning maintenance for several hours, an operator wearing protective gear opens the process chamber and uses a detector to check the HF level in the process chamber. If the detected HF level is above the safe limit, the HF cleaning procedure is repeated. The HF cleaning procedure requires a long time, thereby increasing the downtime of the process chamber. The HF cleaning procedure also requires manual testing of the HF level in the process chamber, which endangers the operator.

[0037] The present disclosure provides an HF cleaning method that solves the above-mentioned problems. The HF cleaning method of the present disclosure includes high-pressure cleaning (also referred to as rough cleaning) and low-pressure cleaning (also referred to as fine cleaning) of the processing chamber. As described in detail below, rough cleaning includes cleaning the processing chamber and only cleaning the valves and associated pipelines that operate at high pressure during normal operation of the processing chamber. These high-pressure valves and associated pipelines are usually located downstream of the processing chamber. Fine cleaning includes cleaning the processing chamber and only cleaning the valves and associated pipelines that operate at low pressure during normal operation of the processing chamber. These low-pressure valves and associated pipelines are usually located upstream of the processing chamber and include valves and pipelines up to but not including the gas delivery system (referred to as a gas box). During the cleaning of the processing chamber, the gas box is cut off (i.e., isolated) from the processing chamber by closing the isolation valve associated with the gas box.

[0038] When the process chamber is cleaned regularly, both rough cleaning and fine cleaning are performed. When both rough cleaning and fine cleaning are performed, fine cleaning is performed after rough cleaning. However, depending on the frequency of cleaning the process chamber, both rough cleaning and fine cleaning do not need to be always performed together to clean the process chamber. For example, if the process chamber is cleaned frequently, fine cleaning may be performed only once or more between consecutive rough cleaning stages and fine cleaning stages. Although it is also possible to perform rough cleaning without fine cleaning thereafter, fine cleaning is preferably always performed after each rough cleaning.

[0039] Rough sweep and fine sweep are performed automatically (i.e., without operator intervention and testing). Rough sweep removes most of the HF from the processing chamber. Fine sweep removes residual traces of HF from the processing chamber that may remain in the processing chamber after rough sweep, so that the HF level in the processing chamber is below the safe level and can be safely tested if necessary. The HF sweep method of the present disclosure takes a shorter time than the sweep method that requires operator intervention and testing. Further, the number of cycles of fine sweep or the duration of fine sweep (described below) can be adjusted so that at the end of fine sweep, the HF level in the processing chamber is below the safe level and can be safely tested if necessary.

[0040] HF sweeps according to the present disclosure (i.e., both coarse and fine sweeps of HF) are performed only during preventive maintenance. HF sweeps are not performed during substrate processing (i.e., during normal operation or use of the process chamber for processing substrates). HF sweeps according to the present disclosure are also not performed between processing of substrates in the process chamber. Therefore, HF sweeps according to the present disclosure are different from any other sweeps performed during substrate processing.

[0041] The present disclosure is organized as follows. Before explaining the HF cleaning method of the present disclosure, an example substrate processing system including an example of a processing chamber and an example of a high pressure valve and a low pressure valve is described with reference to FIG. Figure 1 Show and describe. Figure 2 A system for performing HF sweep is shown, comprising Figure 1 The parts of the substrate processing system which are referred to in Figure 3-7 The HF sweep described. Figure 3 and Figure 4 The operations performed during HF sweep are shown. Figure 5 A method for performing HF sweep is shown. Figure 6 A method of pumping a process chamber using a roughing valve and a combination of a throttling valve and a gate valve (all described below) is shown. Figure 7 A method of performing only fine sweeping when HF sweeping is frequently performed is shown.

[0042] Figure 1 An example of a substrate processing system 101 is shown. For example, the substrate processing system 101 includes a processing chamber 100 and a plurality of high pressure valves and low pressure valves (described below). For example, the processing chamber 100 includes four stations STN1 102-1, STN2 102-2, STN3 102-3, and STN4 102-4 (collectively referred to as stations 102). Although four stations are shown for example, the processing chamber 100 can have any number of stations.

[0043] One or more substrates (not shown) may be processed in station 102 using one or more processes. For example, a process may include a deposition process for depositing material on a substrate or an etching process for removing material from a substrate. In some processes, substrates may be sequentially transferred from one station to another by a computer-controlled robot (not shown) and may be processed sequentially in station 102. Alternatively, in some processes, four substrates may be processed simultaneously in four stations, respectively.

[0044] Each station 102 includes a pedestal 104 (shown at 104-1, 104-2, 104-3, and 104-4) to support a substrate (not shown) during processing. Each station 102 includes a showerhead SHD 106 (shown at 106-1, 106-2, 106-3, and 106-4) to supply one or more gases into the station 102 during substrate processing. The showerhead 106 is attached to a ceiling (not shown) of the processing chamber 100. In some processes, although not shown, a plasma may be ignited during substrate processing.

[0045] The gas delivery system 110 supplies various gases to the processing chamber 100. For example, the various gases may include process gases, precursors, purge gases (e.g., inert gases), cleaning gases, etc. The gas delivery system 110 supplies various gases to the processing chamber 100 through various valves and manifolds (also referred to as conduits or pipes) as described below.

[0046] The gas delivery system 110 is connected to a plurality of valves 112. The valves 112 are connected to a plurality of valves 116 (shown at 116-1, 116-2, 116-3, and 116-4) through a plurality of manifolds 114 (shown at 114-1, 114-2, 114-3, and 114-4). The valves 116 are connected to the showerhead 106 through a plurality of manifolds 118 (shown at 118-1, 118-2, 118-3, and 118-4). The valves 112, 116 and the manifolds 114, 118 are located above the ceiling of the processing chamber 100 (i.e., upstream of the processing chamber 100).

[0047] During HF sweep and substrate processing (i.e., normal operation or use of the process chamber 100 to process substrates), the valves 112, 116 are only closed when the pressure in the process chamber 100 is low (e.g., less than P1, close to vacuum, as shown in FIG. Figure 4 ). Therefore, valves 112, 116 and manifolds 114, 118 are referred to as low pressure (LP) valves and LP manifolds, respectively, and are used throughout this disclosure as non-limiting examples of LP valves and LP manifolds in substrate processing system 101.

[0048] The stations 102 are connected to the clamping manifold 120 via corresponding valves 122 (shown at 122-1, 122-2, 122-3, and 122-4) and manifolds 123 (shown at 123-1, 123-2, 123-4). The valves 122 are connected to the clamping manifold 120 through corresponding manifolds 124 (shown at 124-1, 124-2, 124-3, and 124-4). An additional valve 122-5 is connected between the process chamber 100 and the clamping manifold 120 through corresponding manifolds 122-5 and 122-6. The valve 122-5 equalizes the pressure in the clamping manifold 120 and the process chamber 100. The valves 122-1, 122-2, 122-3, 122-4, and 122-5 are collectively referred to as valves 122. The manifolds 123-1, 123-2, 123-3, 123-4, 123-5, and 123-6 are collectively referred to as a manifold 123. The valve 122 and the manifolds 123 and 124 are located below the process chamber 100 (ie, downstream of the process chamber 100).

[0049] For example, valve 122 and manifolds 123, 124 located downstream of process chamber 100 are referred to as a first plurality of valves and manifolds. Valves 112, 116 and manifolds 114, 118 located upstream of process chamber 100 are referred to as a second plurality of valves and manifolds.

[0050] During HF sweep and substrate processing (i.e., normal operation of the process chamber 100), the valve 122 is only opened when the pressure in the process chamber 100 is high (e.g., P2, which is greater than P1, such as Figure 4 Therefore, valve 122 and manifolds 120, 123, 124 are referred to as high pressure (HP) valves and HP manifolds, respectively, and are used throughout this disclosure as non-limiting examples of HP valves and HP manifolds in substrate processing system 101.

[0051] In order to evacuate the process chamber 100, a plurality of valves 130, 132, and 134 are connected to the process chamber 100 and a vacuum pump 136. Valve 130 is a throttle valve 130. Valve 132 is a gate valve 132. Valve 134 is a roughing valve 134. The throttle valve 130 can be opened and closed gradually (e.g., stepwise). The gate valve 132 and the roughing valve 134 are on / off valves. The roughing valve 134 is smaller than the gate valve 132. The throttle valve 130 and the gate valve 132 are connected in series with each other. The roughing valve 134 is connected across (in parallel) the throttle valve 130 and the gate valve 132. Valves 130, 132, and 132 are also located downstream of the process chamber 100.

[0052] Throttle valve 130 and gate valve 132 are connected to a main foreline 131 (shown in FIG. 1 ) that connects process chamber 100 to vacuum pump 136. Figure 2). Gate valve 132 is located downstream of throttle valve 130 in main foreline 131. One end of roughing valve 134 is connected to secondary foreline 133, which is connected to process chamber 100. The other end of roughing valve 134 is connected to main foreline 131 after gate valve 132. Main foreline 131 is many times larger than secondary foreline 133. For example, the diameter of main foreline 131 may be four inches, while the diameter of secondary foreline 133 may be one-quarter inch.

[0053] The operation of valves 130, 132 and 134 is described below with reference to Figure 3-7 Briefly, when the pressure in the processing chamber 100 is high (e.g. Figure 4 , which is close to atmospheric pressure during the HF sweep described below or before substrate processing begins during normal operation), the roughing valve 134 is initially opened (while the throttle valve 130 and the gate valve 132 are closed) to gradually (slowly) reduce the pressure in the processing chamber 100 to less than or equal to P1 (shown in FIG. 1 ) using the vacuum pump 136. Figure 4 ). Thus, the initial load on the vacuum pump 136 for reducing the pressure in the process chamber 100 from high pressure to low pressure is reduced. Subsequently, after the pressure in the process chamber 100 is reduced to less than or equal to P1, the throttle valve 130 and the gate valve 132 are opened to further reduce the pressure in the process chamber 100 using the vacuum pump 136 during HF cleaning as described below, or to approach vacuum before starting substrate processing during normal operation.

[0054] To perform HF purge according to the present disclosure, valve 138 is connected to process chamber 100. Valve 138 (also referred to as air valve 138) is connected to air filter 139. During HF purge, air valve 138 is opened to allow air to flow into process chamber 100 via air filter 139, as described in detail below. Air filter 139 is designed to remove contaminants including moisture from air before the air enters process chamber 100.

[0055] A plurality of pressure switches 140 are connected to the process chamber 100. The switches 140 are configured to be activated at different pressures in the process chamber 100. When activated, the switches 140 activate some valves and deactivate other valves, as described in detail below. In short, when the pressure in the process chamber 100 is less than P1 (shown in FIG. Figure 4 ) (e.g. P1 = 100 Torr), the first switch (e.g. Figure 2 SW1) shown in FIG. 1 opens all valves located upstream of the process chamber 100 so that the gas from the gas delivery system 110 can be supplied to the process chamber 100. In contrast, when the pressure in the process chamber 100 is greater than or equal to P1, the first switch (e.g., SW2) opens all valves located upstream of the process chamber 100 so that the gas from the gas delivery system 110 can be supplied to the process chamber 100. Figure 2SW1) shown closes all valves located upstream of the process chamber 100, so that no gas from the gas delivery system 110 is supplied to the process chamber 100.

[0056] When the air valve 138 is opened, the pressure in the processing chamber 100 increases. Figure 2 SW2 (shown in FIG. 1 ) is configured to increase the pressure in the process chamber 100 to a pressure P2 (shown in FIG. Figure 4 ) (e.g., P2 = 570 Torr), the air valve 138 is closed, and the pressure P2 is closer to the atmospheric pressure (i.e., 1 atm or 760 Torr). If the second switch SW2 fails to close the air valve 138 (e.g., due to a failure of the second switch SW2 and / or the software in the controller 150 described below), as the pressure in the processing chamber 100 further increases and reaches the pressure P3 (shown in FIG. Figure 4 )(e.g. P3=650Torr), the third switch SW3 (shown in Figure 4 ) is configured (eg, hard-wired) to directly close the air valve 138 to prevent further increase in pressure in the processing chamber 100. The operation of the pressure switch 140 is described below with reference to Figure 2-7 Describe in more detail.

[0057] The controller 150 is connected to all of the above-mentioned valves, switches 140 and vacuum pump 136. The controller 150 controls the operation of these above-mentioned elements and is described in more detail below.

[0058] Figure 2 A system 103 for performing HF sweeps according to the present disclosure is shown. The system 103 comprises Figure 1 The parts of the substrate processing system 101 are related to the following reference Figure 3-7 The system 103 includes a processing chamber 100; valves 130, 132, 134, 138; an air filter 139; a vacuum pump 136, a pressure switch 140 including switches SW1, SW2, SW3; and a controller 150. The connections of these components have been described above with reference to Figure 1 description, and therefore will not be repeated for the sake of brevity. Figure 3-7 The operation of these elements for performing HF sweeping is described in detail.

[0059] Figure 3 A table outlining the steps performed by the controller 150 during HF sweeping according to the present disclosure is shown. These steps are numbered 1-11 and are referred to below. Figure 4-7 Steps 1-11 are illustrated in Figure 4 , and refer to Figure 5-7 Detailed description.

[0060] like Figure 4 As shown, HF cleaning is performed in two stages or periods: a high pressure (HP) cleaning including steps 1-6 and a low pressure (LP) cleaning including steps 7-9. During the HP cleaning, the pressure in the processing chamber 100 is between near vacuum and less than one atmosphere (i.e., between 0 Torr and 1 atm or 760 Torr). During the LP cleaning, the pressure in the processing chamber 100 is between near vacuum and less than P1 (e.g., between 0 Torr and less than 100 Torr).

[0061] Figure 5 Display according to Figure 3 and 4 Steps 1-11 shown use Figure 1 and 2 The illustrated systems 101 , 103 perform a method of HF sweeping. Figure 6 A method of pumping the process chamber 100 is shown, which uses a combination of a roughing valve 134, a throttle valve 130, and a gate valve 132, and is Figure 5 used during the method. Figure 7 A method is shown in which only fine sweeping is performed without performing coarse sweeping between consecutive HF sweeps when HF sweeping is frequently performed. For example, the controller 150 performs Figure 5-7 Now refer to the method shown. Figure 5 Also refer to Figure 1-4 HF sweeping performed in accordance with the present disclosure is described in detail.

[0062] Figure 5 A method 200 for performing an HF sweep including the coarse sweep and fine sweep described above is shown. The method 200 initially performs a coarse sweep as follows, and then performs a fine sweep. The coarse sweep may also be referred to as the first stage or first period of the HF sweep. The fine sweep may also be referred to as the second stage or second period of the HF sweep. The coarse sweep removes HF from the high pressure valves (e.g., valve 122) and associated manifolds (e.g., manifolds 120, 123, 124) located downstream of the process chamber 100. The fine sweep removes HF from the low pressure valves (e.g., valves 112, 116) and associated manifolds (e.g., manifolds 114, 118) located upstream of the process chamber 100.

[0063] In step 202, to start a rough purge of the process chamber 100 during preventive maintenance, the controller 150 closes all valves in the substrate processing system 101 ( Figure 3 and 4 Step 1) as shown in the figure.

[0064] In step 204, the controller 150 opens the throttle valve 130 and the gate valve 132. In addition, the controller 150 turns on the vacuum pump 136 to pump the process chamber 100 to a base pressure Th1 (i.e., a first threshold pressure Th1), which is less than P1 ( Figure 3 and 4 Step 2 shown). For example, the base pressure Th1 may be close to vacuum or slightly greater than vacuum (eg, P1 = 100 Torr, Th1 = 10 or 5 Torr).

[0065] At step 206, the controller 150 opens the air valve 138 and all high pressure valves (e.g., valve 122) located downstream of the process chamber 100 in the substrate processing system 101. Atmospheric air flows through the air filter 139 and the air valve 138 into the process chamber 100. The pressure in the process chamber 100 increases (e.g., Figure 4 As shown, it increases to greater than P1)( Figure 3 and 4 ) as shown in step 3).

[0066] In step 208, the controller 150 opens the roughing valve 134. In addition, the controller 150 closes the throttle valve 130 and the gate valve 132 ( Figure 3 and 4 As shown in step 4). Figure 4 As shown, the pressure in the processing chamber 100 reaches a pressure greater than P1 and less than P2 ( Figure 3 and 4 4) as shown in the figure.

[0067] At step 210, the vacuum pump 136 continues to pump (ie, evacuate) the process chamber 100 for a first specified (predetermined) amount of time ( Figure 3 and 4 5 shown in FIG. 1 ). The first specified (predetermined) amount of time is referred to as the high pressure purge time or the rough purge time (also referred to as the first predetermined purge time, in Figure 4 1. The HP (rough) purge time 1 is shown in FIG. 1. For example, the HP (rough) purge time 1 may be about several hours (e.g., 4-6 hours). The HP (rough) purge time 1 is calibrated according to the process that has been performed in the process chamber 100 before the HF purge is performed during the preventive maintenance. During the HP (rough) purge time 1, since only the rough pump valve 134 is open and the throttle valve 130 and the gate valve 132 are closed, the load of the vacuum pump 136 pumping the process chamber 100 is low.

[0068] At step 212, after the HP (rough) purge time 1 has elapsed, the controller 150 closes the air valve 138. The vacuum pump 136 continues to pump (i.e., evacuate) the process chamber 100 until the pressure in the process chamber 100 is reduced from the high pressure ( Figure 4 The HP (coarse) cleaning time 1 is higher than P1) and drops to low pressure ( Figure 4 Th1) (shown in Figure 3 and 4 At this point, the rough purge of the process chamber 100 is completed, and the HF in all HP valves (e.g., valve 122) and associated manifolds (e.g., manifolds 120, 123, 124) located downstream of the process chamber 100 in the substrate processing system 101 are purged.

[0069] During the whole rough cleaning process, since the pressure in the processing chamber 100 is greater than P1 (where 0 < P1, as Figure 4 122 ), so switch SW1 does not allow any LP valve (e.g., valves 112, 116) located upstream of process chamber 100 to open. Instead, switch SW1 only allows the HP valve (e.g., valve 122) located downstream of process chamber 100 to remain open. Therefore, the HP valve (e.g., valve 122) and associated manifolds (e.g., manifolds 120, 123, 124) located downstream of process chamber 100 can be purged of HF during the rough purge.

[0070] Furthermore, during the rough cleaning, if the pressure in the process chamber 100 increases to a value greater than P2 (where 0 < P1 < P2, as described above), Figure 4 As shown in FIG. 1 ), the switch SW2 closes the air valve 138. Alternatively, if the switch SW2 fails to close the air valve 138 when the pressure in the process chamber 100 increases to greater than P2, the switch SW3 closes the air valve 138 when the pressure in the process chamber 100 reaches P3 as described above (where 0<P1<P2<P3<1atm, as shown in FIG. 1 ). Figure 4 As shown), close the air valve 138.

[0071] In step 214, after the rough cleaning, in order to start the fine cleaning of the process chamber 100 during the preventive maintenance, the controller 150 closes all HP valves (e.g., valve 122) located downstream of the process chamber 100 in the substrate processing system 101. In addition, the controller 150 opens all LP valves (e.g., valves 112, 116) located upstream of the process chamber 100 ( Figure 3 and 4 ) as shown in step 7).

[0072] At step 216, the controller 150 opens the air valve 138 and the roughing valve 134 ( Figure 3 and 4 8 shown in FIG. 1 ). The controller 150 also opens the gate valve 132 but controls the throttle valve 130 as described below. The vacuum pump 136 is already at step 210 ( Figure 3 and 4 When fine cleaning begins (see Figure 3 and 4The pressure in the process chamber 100 (which is Th1 ) starts to rise (at the end of step 6 and the beginning of step 7 shown in FIG. 1 ).

[0073] In step 218, in order to increase the pressure in the process chamber 100, the controller 150 sets the opening of the throttle valve 130 to a first setting ( Th2 ) corresponding to the pressure Th2 (ie, the second threshold pressure Th1 ) to be reached in the process chamber 100. Figure 3 and 4 8). Figure 4 As shown, the pressure Th2 is greater than the pressure Th1, but less than the pressure P1. Figure 4 As shown, P1 = 100 Torr, Th1 = 10 or 5 Torr, Th2 = 80 or 90 Torr. Due to the first setting of the throttle valve 130, the pressure in the process chamber 100 continues to increase from Th1 to Th2. Figure 3 and 4 The vacuum pump 136 started in step 5) shown in FIG. 1 continues to pump the process chamber 100. Figure 4 As shown, 0<Th1<Th2<P1.

[0074] At step 220, the controller 150 determines whether the pressure in the process chamber 100 has increased to Th2. At step 222, the controller 150 continues to monitor the pressure in the process chamber 100. The throttle valve 130 remains at the first setting until the pressure in the process chamber 100 has increased to the pressure Th2. Figure 3 and 4 The vacuum pump 136 turned on in step 5) shown in FIG. 1 continues to pump the process chamber 100 .

[0075] In step 224, after the pressure in the process chamber 100 has increased to Th2, in order to reduce the pressure in the process chamber 100 from Th2 to Th1, the controller 150 sets the throttle valve 130 to a second setting (i.e., the first threshold pressure Th1) corresponding to the pressure Th1 to be reached in the process chamber 100 ( Figure 3 and 4 In step 210 ( Figure 3 and 4 The vacuum pump 136 turned on in step 5) shown in FIG. 1 continues to pump the process chamber 100 .

[0076] At step 226, the controller 150 determines whether the pressure in the process chamber 100 has dropped to Th1. At step 228, the controller 150 continues to monitor the pressure in the process chamber 100. The throttle valve 130 remains at the second setting until the pressure in the process chamber 100 has dropped to pressure Th1. Figure 3 and 4The vacuum pump 136 turned on in step 5) shown in FIG. 1 continues to pump the process chamber 100 .

[0077] At step 230, the controller 150 determines whether the cycle including steps 218-228 has been executed a predetermined number of times or for a second specified (predetermined) period of time. Execution of the cycle including steps 218-228 the predetermined number of times or for the second specified (predetermined) period of time is sufficient to purge HF from all LP valves (e.g., valves 112, 116) and associated manifolds (e.g., manifolds 114, 118) located upstream of the process chamber 100.

[0078] If the loop including steps 218-228 has not been executed the predetermined number of times or for the second specified (predetermined) time period, the controller 150 repeats the loop including steps 218-228 the predetermined number of times or for the second specified (predetermined) time period ( Figure 3 and 4 In step 210 ( Figure 3 and 4 The vacuum pump 136 turned on in step 5) shown in FIG. 1 continues to pump the process chamber 100 .

[0079] If the loop including steps 218-228 has been executed a predetermined number of times or for a second specified (predetermined) period of time, then at step 232, the controller 150 closes all valves in the substrate processing system 101 and turns off the vacuum pump 136 ( Figure 3 and 4 At this point, the fine cleaning of the process chamber 100 is completed, and the HF in all LP valves (e.g., valves 112, 116) and associated manifolds (e.g., manifolds 114, 118) located upstream of the process chamber 100 in the substrate processing system 101 is cleaned.

[0080] The second specified (predetermined) amount of time during which the fine sweep of the process chamber 100 is performed is referred to as the low pressure sweep time or the fine sweep time (also referred to as the second predetermined sweep time, Figure 4 1). For example, the LP (fine) sweep time 2 may be on the order of several minutes (e.g., less than one hour). Therefore, the LP (fine) sweep time 2 is much shorter than the HP (coarse) sweep time 1. The LP (fine) sweep time 2 is also calibrated based on the processes that have been performed in the processing chamber 100 before the HF sweep is performed during the preventive maintenance. For example, the number of cycles to be performed during the fine sweep or the duration of the fine sweep (i.e., the LP (fine) sweep time 2) may be adjusted so that at the end of the fine sweep, the HF level in the processing chamber is below a safe level and can be safely tested if necessary.

[0081] During the entire fine cleaning process, since the pressure in the process chamber 100 is less than P1, the switch SW1 does not allow any HP valve (e.g., valve 122) located downstream of the process chamber 100 to be opened. Instead, the switch SW1 only allows the LP valve (e.g., valves 112 and 116) located upstream of the process chamber 100 to remain open. Therefore, the HF in the LP valve (e.g., valves 112 and 116) and the associated manifolds (e.g., manifolds 114 and 118) located upstream of the process chamber 100 can be cleaned out during the fine cleaning period.

[0082] Figure 6 A method 300 is shown for pumping (i.e., evacuating) a process chamber 100 using a combination of a roughing valve 134 and a throttling valve 130 and a gate valve 132 in accordance with the present disclosure. The method 300 is performed during the roughing purge portion of the method 200 (e.g., during the roughing purge portion of the method 200). Figure 3 and 4 6) and during fine cleaning (e.g. Figure 3 and 4 Used during the portion of steps 8-10 shown).

[0083] In step 302, the controller 150 determines whether the pressure in the process chamber 100 is high (e.g., greater than P1) or low (e.g., less than P1). If the pressure in the process chamber 100 is high (e.g., greater than P1), in step 304, the controller 150 closes the throttle valve 130 and the gate valve 132. In step 306, the controller 150 opens the roughing valve 134. In step 308, the controller 150 turns on the vacuum pump 136 (if not already on), which pumps the process chamber 100. In step 310, the controller 150 monitors the pressure in the process chamber 100, and the method 300 returns to step 302.

[0084] Since only the roughing valve 134 is open, and the throttle valve 130 and the gate valve 132 are closed, the load on the vacuum pump 136 for reducing the pressure in the processing chamber 100 from a high pressure (eg, greater than P1) to a low pressure (eg, less than P1) is low.

[0085] On the contrary, at step 302, if the pressure in the process chamber 100 is low (e.g., less than P1), then at step 312, the controller 150 closes the roughing valve 134. At step 314, the controller opens the gate valve 132. At step 316, the controller 150 opens the throttle valve 130 incrementally from 0 degrees to 90 degrees. The controller 150 turns on the vacuum pump 136 (if not turned on), and the vacuum pump 136 pumps the process chamber 100.

[0086] At step 318, the controller 150 monitors the pressure in the process chamber 100. At step 320, the controller 150 determines whether the pressure in the process chamber 100 has been reduced to Th1 (e.g., from P1 or Th2). If not, the controller 150 repeats steps 316-320. When the pressure in the process chamber 100 has been reduced to Th1, the method 300 ends.

[0087] Figure 7 Shows when frequently executed according to Figure 5 The method 350 of only performing fine sweeping during the HF sweeping (i.e., coarse sweeping followed by fine sweeping) of the method 200 shown in FIG. Figure 5 The method 200 shown performs HF sweeps frequently, and the method 350 of fine sweeping can be performed between subsequent HF sweeps. Figure 5 When the method 200 shown frequently performs HF sweeps, the coarse sweep may be omitted between consecutive HF sweeps, and the coarse sweep may be omitted according to the method 200 shown in FIG. Figure 5 Only fine sweeps are performed between the consecutive HF sweeps that are frequently performed in method 200. Fine sweeps according to method 350 are performed as follows.

[0088] In step 352, to initiate a fine cleaning of the process chamber 100 during preventive maintenance, the controller 150 closes all valves in the substrate processing system 101 ( Figure 3 and 4 Step 1) as shown in the figure.

[0089] In step 354, the controller 150 opens the throttle valve 130 and the gate valve 132 and turns on the vacuum pump 136 to pump the process chamber 100 to a base pressure Th1 (i.e., a first threshold pressure Th1), which is less than P1 ( Figure 3 and 4 For example, the base pressure Th1 may be close to vacuum or slightly greater than vacuum (eg, P1=100 Torr, Th1=10 or 5 Torr). In step 356, once the pressure in the process chamber 100 is less than or equal to the pressure Th1, the controller 150 closes the throttle valve 130 and the gate valve 132.

[0090] At step 358, the controller 150 closes all HP valves (e.g., valve 122) located downstream of the process chamber 100 in the substrate processing system 101. In addition, the controller 150 opens all LP valves (e.g., valves 122, 116) located upstream of the process chamber 100 ( Figure 3 and 4 ) as shown in step 7).

[0091] At step 360, the controller 150 opens the air valve 138 to allow atmospheric air (i.e., air from outside the process chamber 100) to enter the process chamber 100. In addition, the controller 150 opens the roughing valve 134. The controller 150 turns on the vacuum pump 136 (if not already turned on). Atmospheric air enters the process chamber 100 via the air valve 138, and fine sweeping begins (see Figure 3 and 4 At the beginning of step 7 shown in FIG. 1 , the pressure in the process chamber 100 (which is Th1 ) starts to increase.

[0092] In step 362, in order to increase the pressure in the process chamber 100, the controller 150 sets the opening of the throttle valve 130 to a first setting ( Th2 ) corresponding to the pressure Th2 (ie, the second threshold pressure Th1 ) to be reached in the process chamber. Figure 3 and 4 8). Figure 4 As shown, the pressure Th2 is greater than the pressure Th1 but less than the pressure P1. Figure 4 As shown, P1 = 100 Torr, Th1 = 10 or 5 Torr, and Th2 = 80 or 90 Torr. Due to the first setting of the throttle valve 130, the pressure in the process chamber 100 continues to increase from Th1 to Th2. Figure 3 and 4 The vacuum pump 136 opened in step 7) shown in FIG. 1 continues to pump the process chamber 100. Figure 4 As shown, 0<Th1<Th2<P1.

[0093] At step 364, the controller 150 determines whether the pressure in the process chamber 100 has increased to Th2. At step 366, the controller 150 continues to monitor the pressure in the process chamber 100. The throttle valve 130 remains at the first setting until the pressure in the process chamber 100 has increased to pressure Th2. Figure 3 and 4 The vacuum pump 136 turned on in step 7) shown in FIG. 1 continues to pump the process chamber 100 .

[0094] At step 368, after the pressure in the process chamber 100 has increased to Th2, in order to reduce the pressure in the process chamber 100 from Th2 to Th1, the controller 150 sets the throttle valve 130 to a second setting (i.e., the first threshold pressure Th1) corresponding to the pressure Th1 to be reached in the process chamber 100 ( Figure 3 and 4 In step 360 ( Figure 3 and 4 The vacuum pump 136 turned on in step 7) shown in FIG. 1 continues to pump the process chamber 100 .

[0095] In step 370, the controller 150 determines whether the pressure in the process chamber 100 has dropped to Th1. In step 372, the controller 150 continues to monitor the pressure in the process chamber 100. The throttle valve 130 remains at the second setting until the pressure in the process chamber 100 has dropped to pressure Th1. Figure 3 and 4 The vacuum pump 136 turned on in step 7) shown in FIG. 1 continues to pump the process chamber 100 .

[0096] At step 374, the controller 150 determines whether the cycle including steps 362-372 has been executed a predetermined number of times or for a second specified (predetermined) period of time. Execution of the cycle including steps 362-372 a predetermined number of times or for a second specified (predetermined) period of time is sufficient to purge HF from all LP valves (e.g., valves 112, 116) and associated manifolds (e.g., manifolds 114, 118) located upstream of the processing chamber 100.

[0097] If the loop including steps 362-372 has not been executed a predetermined number of times or for a second specified (predetermined) period of time, the controller 150 repeats the loop including steps 362-372 a predetermined number of times or for a second specified (predetermined) period of time ( Figure 3 and 4 In step 360 ( Figure 3 and 4 The vacuum pump 136 turned on in step 7) shown in FIG. 1 continues to pump the process chamber 100 .

[0098] If the loop including steps 362-372 has been executed a predetermined number of times or for a second specified (predetermined) period of time, in step 376, the controller 150 closes all valves in the substrate processing system 101 and turns off the vacuum pump 136 ( Figure 3 and 4 At this point, the fine cleaning of the process chamber 100 is completed, and the HF in all LP valves (e.g., valves 112, 116) and associated manifolds (e.g., manifolds 114, 118) located upstream of the process chamber 100 in the substrate processing system 101 is cleaned.

[0099] The second specified (predetermined) amount of time for performing the fine cleaning of the processing chamber 100 is the same as that described above with reference to Figure 5 The LP (fine) sweep time 2 is described above, and therefore will not be described again for the sake of brevity. Figure 5As described above, during the entire fine cleaning process, the switch SW1 keeps the HP valve (e.g., valve 122) located downstream of the process chamber 100 closed, and only allows the LP valve (e.g., valves 112 and 116) located upstream of the process chamber 100 to remain open. Therefore, the HF in the LP valve (e.g., valves 112 and 116) located upstream of the process chamber 100 and the associated manifolds (e.g., manifolds 114 and 118) can be cleaned out during the fine cleaning period.

[0100] The foregoing description is merely illustrative in nature and is in no way intended to limit the present disclosure, its application or use. The broad teachings of the present disclosure can be implemented in various forms. Therefore, although the present disclosure includes specific examples, the true scope of the present disclosure should not be so limited, because other modifications will become apparent upon studying the drawings, description and appended claims.

[0101] It should be understood that one or more steps in the method may be performed in different orders (or simultaneously) without changing the principles of the present disclosure. In addition, although each embodiment is described above as having certain features, any one or more of those features described with respect to any embodiment of the present disclosure may be implemented in the features of any other embodiment and / or combined with the features of any other embodiment, even if the combination is not explicitly described. In other words, the described embodiments are not mutually exclusive, and the permutation of one or more embodiments with respect to each other remains within the scope of the present disclosure.

[0102] Various terms are used to describe the spatial and functional relationships between elements (e.g., between modules, between circuit elements, between semiconductor layers, etc.), including "connected," "engaged," "coupled," "adjacent," "next to," "on top of," "above," "below," and "disposed." Unless the relationship between a first and a second element is explicitly described as "direct," when such a relationship is described in the above disclosure, the relationship can be a direct relationship, in which there are no other intervening elements between the first and second elements, but can also be an indirect relationship, in which there are one or more intervening elements (spatially or functionally) between the first and second elements. As used herein, the phrase "at least one of A, B, and C" should be interpreted to mean a logical (A or B or C), using a non-exclusive logical OR, and should not be interpreted to mean "at least one of A, at least one of B, and at least one of C."

[0103] In some implementations, the controller is part of a system, which may be part of the above examples. Such a system may include a semiconductor processing device, which includes one or more processing tools, one or more chambers, one or more platforms for processing, and / or specific processing components (wafer pedestals, gas flow systems, etc.). These systems may be integrated with electronics for controlling their operation before, during, and after processing of semiconductor wafers or substrates. The electronics may be referred to as a "controller," which may control various components or subcomponents of one or more systems.

[0104] Depending on the processing requirements and / or system type, the controller can be programmed to control any of the processes disclosed herein, including the delivery of process gases, temperature settings (e.g., heating and / or cooling), pressure settings, vacuum settings, power settings, radio frequency (RF) generator settings, RF matching circuit settings, frequency settings, flow rate settings, fluid delivery settings, position and operation settings, wafer transfer into and out of tools and other transfer tools and / or load locks connected or docked with a particular system.

[0105] Broadly speaking, a controller may be defined as an electronic device having various integrated circuits, logic, memory, and / or software that receives instructions, issues instructions, controls operations, enables cleaning operations, enables endpoint measurements, etc. Integrated circuits may include chips in the form of firmware that stores program instructions, digital signal processors (DSPs), chips defined as application specific integrated circuits (ASICs), and / or one or more microprocessors or microcontrollers that execute program instructions (e.g., software).

[0106] Program instructions may be instructions sent to a controller in the form of various individual settings (or program files) that define operating parameters for performing a particular process on or for a semiconductor wafer or system. In some embodiments, the operating parameters may be part of a recipe defined by a process engineer to accomplish one or more processing steps during the fabrication of one or more layers, materials, metals, oxides, silicon, silicon dioxide, surfaces, circuits, and / or dies of a wafer.

[0107] In some implementations, the controller can be part of or coupled to a computer that is integrated with the system, coupled to the system, otherwise networked to the system, or a combination thereof. For example, the controller can be in the "cloud" or all or part of a wafer fab host system that can allow remote access to wafer processing. The computer can enable remote access to the system to monitor the current progress of a manufacturing operation, examine the history of past manufacturing operations, examine trends or performance criteria for multiple manufacturing operations, change parameters of a current process, set processing steps to follow a current process, or start a new process.

[0108] In some examples, a remote computer (e.g., a server) may provide process recipes to the system over a network (which may include a local network or the Internet). The remote computer may include a user interface that enables input or programming of parameters and / or settings, which are then sent from the remote computer to the system. In some examples, the controller receives instructions in the form of data that specify parameters for each processing step to be performed during one or more operations. It should be understood that the parameters may be specific to the type of process to be performed and the type of tool that the controller is configured to interface with or control.

[0109] Thus, as described above, the controller may be distributed, for example, by including one or more discrete controllers networked together and working toward a common purpose, such as the processes and controls described herein. An example of a distributed controller for such a purpose is one or more integrated circuits on a chamber that communicate with one or more integrated circuits remotely (e.g., at a platform level or as part of a remote computer), which combine to control the process on the chamber.

[0110] Exemplary systems may include, but are not limited to, plasma etching chambers or modules, deposition chambers or modules, spin rinse chambers or modules, metal plating chambers or modules, cleaning chambers or modules, chamfer edge etching chambers or modules, physical vapor deposition (PVD) chambers or modules, chemical vapor deposition (CVD) chambers or modules, atomic layer deposition (ALD) chambers or modules, atomic layer etching (ALE) chambers or modules, ion implantation chambers or modules, track chambers or modules, and any other semiconductor processing system that may be associated with or used in the manufacture and / or preparation of semiconductor wafers.

[0111] As described above, depending on one or more processing steps to be performed by the tool, the controller can communicate with one or more other tool circuits or modules, other tool components, cluster tools, other tool interfaces, adjacent tools, neighboring tools, tools located throughout the factory, a host computer, another controller, or tools used in material transport to transport wafer containers to and from tool locations and / or load ports in a semiconductor manufacturing facility.

Claims

1. A system for performing preventive maintenance of a processing chamber of a substrate processing system using an atmosphere, the system comprising: a first plurality of valves and manifolds located downstream of the processing chamber of the substrate processing system; a second plurality of valves and manifolds located upstream of the processing chamber of the substrate processing system; as well as A controller configured to perform the preventive maintenance of the process chamber using the atmosphere by: initially purging the process chamber and the first plurality of valves and manifolds while maintaining a pressure in the process chamber between a first pressure and a second pressure greater than the first pressure and less than atmospheric pressure; as well as The process chamber and the second plurality of valves and manifolds are subsequently purged while maintaining a pressure in the process chamber between the first pressure and a third pressure, the third pressure being less than the first pressure.

2. The system of claim 1, wherein the controller is configured to remove halogen-containing residues from the process chamber, the first plurality of valves and manifolds, and the second plurality of valves and manifolds by performing the preventive maintenance of the process chamber using the atmosphere.

3. The system of claim 1, wherein the controller is configured to perform the initial sweep for a longer period of time than the subsequent sweeps.

4. The system of claim 1 , wherein the controller is configured to close the second plurality of valves and manifold and open the first plurality of valves and manifold during the initial purge to purge the first plurality of valves and manifold while maintaining a pressure in the process chamber between the first pressure and the second pressure.

5. The system of claim 1 , wherein the controller is configured to close the first plurality of valves and manifold and open the second plurality of valves and manifold during the subsequent purge to purge the second plurality of valves and manifold while maintaining a pressure in the processing chamber between the first pressure and the third pressure.

6. The system of claim 1, wherein the controller is configured to: Performing the initial cleaning and the subsequent cleaning at a first time; At a second time after the first time, performing the initial cleaning and the subsequent cleaning; and Between the first time and the second time, the subsequent cleaning is performed only one or more times.

7. A method of performing preventive maintenance of a processing chamber of a substrate processing system using an atmosphere, the method comprising: Initially opening a first plurality of valves located downstream of the process chamber and closing a second plurality of valves located upstream of the process chamber to perform the preventive maintenance while maintaining a pressure in the process chamber between a first pressure and a second pressure greater than the first pressure and less than atmospheric pressure; using the atmosphere to purge the process chamber and the first plurality of valves to perform the preventive maintenance while maintaining a pressure in the process chamber between the first pressure and the second pressure; subsequently closing the first plurality of valves and opening the second plurality of valves to perform the preventive maintenance while maintaining a pressure in the process chamber between the first pressure and a third pressure, the third pressure being less than the first pressure; as well as The preventative maintenance is performed by purging the process chamber and the second plurality of valves using the atmosphere while maintaining a pressure in the process chamber between the first pressure and the third pressure.

8. The method of claim 7, wherein purging the process chamber, the first plurality of valves, and the second plurality of valves comprises removing halogen-containing residues from the process chamber, the first plurality of valves, the second plurality of valves, and a manifold associated with the first plurality of valves and the second plurality of valves.

9. The method of claim 7, further comprising purging the process chamber and the first plurality of valves for a longer period of time than purging the process chamber and the second plurality of valves.

10. The method according to claim 7, further comprising: initially performing a first stage of purging of the process chamber, the first plurality of valves, and the second plurality of valves at a first time; subsequently performing a second stage of purging the process chamber, the first plurality of valves, and the second plurality of valves at a second time; and Between the first time and the second time, a purge of the process chamber and the second plurality of valves is performed only one or more times.

11. A system for performing preventive maintenance of a processing chamber of a substrate processing system using an atmosphere, the system comprising: a first plurality of valves and manifolds located downstream of the process chamber; a second plurality of valves and manifolds located upstream of the process chamber; a first valve for selectively allowing the atmosphere to flow into the process chamber; a throttle valve and a second valve connected in series with each other and connected to the process chamber; a third valve connected across the throttle valve and the second valve; a vacuum pump connected to the throttle valve and the second and third valves; as well as a controller configured to perform the preventive maintenance by controlling the vacuum pump, the throttle valve, and the first, second, and third valves to: initially opening the first plurality of valves and closing the second plurality of valves while maintaining a pressure in the process chamber between a first pressure and a second pressure, the second pressure being greater than the first pressure and less than atmospheric pressure; purging the process chamber and the first plurality of valves and manifolds using the atmosphere; subsequently closing the first plurality of valves and opening the second plurality of valves while maintaining a pressure in the process chamber between the first pressure and a third pressure, the third pressure being less than the first pressure; as well as The process chamber and the second plurality of valves and manifolds are purged using the atmosphere.

12. The system of claim 11, wherein the controller is configured to remove halogen-containing residues from the process chamber, the first plurality of valves and manifolds, and the second plurality of valves and manifolds.

13. The system of claim 11, wherein the controller is configured to purge the process chamber and the first plurality of valves and manifold for a longer period of time than to purge the process chamber and the second plurality of valves and manifold.

14. The system of claim 11, wherein the controller is configured to: Initially performing a first stage of purging of the process chamber, the first plurality of valves and manifold, and the second plurality of valves and manifold at a first time; subsequently performing a second stage of purging the process chamber, the first plurality of valves and manifold, and the second plurality of valves and manifold at a second time; and Between the first time and the second time, a purge of the process chamber and the second plurality of valves and manifold is performed only one or more times.

15. The system of claim 11, wherein the controller is configured to: In response to the pressure in the process chamber being greater than or equal to the first pressure, closing the throttle valve and the second valve, and opening the third valve; and In response to the pressure in the process chamber being less than the first pressure, the throttle valve and the second valve are opened, and the third valve is closed.

16. The system of claim 11, wherein the controller is configured to: closing the first and second plurality of valves, the throttle valve, and the first, second, and third valves; opening the throttle valve and the second valve; pumping the process chamber using the vacuum pump to a first threshold pressure that is less than the first pressure and greater than the third pressure; opening the first valve and the first plurality of valves; continuing to pump the process chamber and the first plurality of valves for a first predetermined period of time; After the first predetermined period of time, closing the first valve; as well as The process chamber is pumped down to the first threshold pressure using the vacuum pump.

17. The system of claim 16, wherein the controller is configured to, after the first predetermined period of time: closing the first plurality of valves and opening the second plurality of valves; opening the first valve and the third valve; a) pumping the process chamber using the vacuum pump with the throttle valve set to a second threshold pressure greater than the first threshold pressure and less than the first pressure; b) in response to the pressure in the process chamber reaching the second threshold pressure, pumping the process chamber using the vacuum pump with the throttle valve set to the first threshold pressure; Repeat a) and b) a predetermined number of times or for a second predetermined time period that is less than the first predetermined time period; as well as The first and second pluralities of valves, the throttling valve, and the first, second, and third valves are closed.

18. The system of claim 11, wherein the controller is configured to: purging the process chamber and the first plurality of valves and manifolds and the second plurality of valves and manifolds at a first time; at a second time after the first time, purging the process chamber and the first plurality of valves and manifolds and the second plurality of valves and manifolds; as well as purging the process chamber and between the first plurality of valves and manifolds and the second plurality of valves and manifolds at the first time and the second time: closing the first and second plurality of valves, the throttle valve, and the first, second, and third valves; opening the throttle valve and the second valve; pumping the process chamber using the vacuum pump to a first threshold pressure that is less than the first pressure and greater than the third pressure; closing the throttle valve and the second valve; opening the second plurality of valves; opening the first valve and the third valve; a) pumping the process chamber using the vacuum pump with the throttle valve set to a second threshold pressure greater than the first threshold pressure and less than the first pressure; b) in response to the pressure in the process chamber reaching the second threshold pressure, pumping the process chamber using the vacuum pump with the throttle valve set to the first threshold pressure; Repeat a) and b) a predetermined number of times or for a predetermined period of time; as well as The first and second pluralities of valves, the throttling valve, and the first, second, and third valves are closed.

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