Radio wave transmission board and manufacturing method thereof

By using the difference in the dielectric constant of the dielectric material in the dielectric waveguide structure to form an electric wave signal transmission path, the problem of signal loss in traditional metal conductors in high-speed and high-frequency signal transmission is solved, and more efficient signal transmission is achieved.

CN120050836APending Publication Date: 2025-05-27BOARDTEK ELECTRONICS CORP
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Patent Information

Application Number
CN202311605226.X
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2023-11-27
Publication Date
2025-05-27

AI Technical Summary

Technical Problem

Traditional metal conductors will cause high signal loss when transmitting high-speed or high-frequency radio wave signals, making it difficult to meet the needs of modern electronic products for high-speed and high-frequency signal transmission.

Method used

A dielectric waveguide structure is adopted to form an electric wave signal transmission path through the difference in the dielectric constants of the first dielectric material and the second dielectric material. A part of the first dielectric material is sandwiched between the second dielectric material to form a sandwich structure to transmit the electric wave signal.

Benefits of technology

The loss rate of radio wave signals during transmission is reduced, and the transmission efficiency of high-speed and high-frequency signals is improved.

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Abstract

The invention provides a radio wave transmission board which comprises a dielectric waveguide structure and two substrate integrated waveguide structures. The dielectric waveguide structure includes a first dielectric material having two grooves and two second dielectric materials disposed in the grooves. The grooves are respectively arranged on two opposite surfaces of the first dielectric material, and a part of the first dielectric material is arranged between the grooves. The dielectric constant of the first dielectric material is smaller than that of the second dielectric material. The dielectric waveguide structures are disposed between the substrate integrated waveguide structures, and one of the substrate integrated waveguide structures is connected to the other substrate integrated waveguide structure through a portion of the first dielectric material and the second dielectric material. Therefore, the loss rate of the electric wave signal during transmission can be reduced.
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Description

Technical Field

[0001] The present invention relates to a radio wave transmission board, and particularly to a radio wave transmission board disposed in a circuit board. Background Art

[0002] In a traditional circuit board, radio wave signals between electronic components are transmitted through metal wires (such as copper wires). However, with the development of electronic products with diversified functions (such as mobile phones), the demand for high-speed and high-frequency signal transmission is also increasing. Generally speaking, when the transmitted signal is faster or higher in frequency, higher signal loss will be caused when transmitted through metal wires. Therefore, the method of transmitting radio wave signals through metal wires is no longer sufficient for the above-mentioned electronic products. Summary of the Invention

[0003] Therefore, the present invention provides a radio wave transmission board and a manufacturing method thereof to reduce the loss rate of signal transmission.

[0004] The present invention provides a radio wave transmission board, which includes a dielectric waveguide structure and two substrate integrated waveguide structures. The dielectric waveguide structure includes a first dielectric material and two second dielectric materials. The first dielectric material has two grooves, and the grooves are respectively located on opposite surfaces of the first dielectric material, and a part of the first dielectric material exists between the two grooves. The second dielectric materials are respectively disposed in the grooves, and the dielectric constant of the first dielectric material is less than the dielectric constant of the second dielectric material. The dielectric waveguide structure is disposed between the substrate integrated waveguide structures, and one of the substrate integrated waveguide structures is connected to the other substrate integrated waveguide structure through a part of the first dielectric material and the second dielectric materials.

[0005] In at least one embodiment of the present invention, the dielectric constant of the first dielectric material ranges from 3.0 to 3.4, and the dielectric constant of the second dielectric material ranges from 10.0 to 20.0.

[0006] In at least one embodiment of the present invention, the dielectric waveguide structure extends from one of the substrate integrated waveguide structures along the long axis direction to the other of the substrate integrated waveguide structures, and a part of the first dielectric material and the second dielectric materials extend along the long axis direction.

[0007] In at least one embodiment of the present invention, each substrate integrated waveguide structure includes a dielectric layer, two metal layers located on opposite sides of the dielectric layer, and a plurality of conductive vias disposed in the dielectric layer. One of the metal layers is connected to the other metal layer through the conductive vias, and the conductive vias are electrically connected to the metal layers.

[0008] In at least one embodiment of the present invention, the substrate integrated waveguide structure is connected to the dielectric waveguide structure through the dielectric layer.

[0009] In at least one embodiment of the present invention, the material of the dielectric layer is the same as that of the first dielectric material.

[0010] The present invention also provides a method for manufacturing a radio wave transmission board, which includes providing a buried structure, the buried structure including a first dielectric material and two second dielectric materials. The second dielectric materials are respectively located on opposite sides of the first dielectric material, and the dielectric constant of the first dielectric material is less than that of the second dielectric material; providing a substrate, the substrate including a dielectric layer and two metal layers respectively located on opposite sides of the dielectric layer; removing a part of the substrate to form an opening communicating with opposite surfaces of the substrate; disposing the buried structure in the opening, wherein the dielectric layer of the substrate is connected to the first dielectric material and the second dielectric materials of the buried structure, and the surfaces of the substrate respectively expose the second dielectric materials of the buried structure; and after disposing the buried structure in the opening, forming a plurality of conductive vias in the substrate, wherein the metal layers are electrically connected to each other through the conductive vias, and the conductive vias are distributed at opposite ends of the buried structure.

[0011] In at least one embodiment of the present invention, providing the buried structure includes providing a dielectric substrate; providing two composite substrates, and each second dielectric material includes a metal foil; laminating the composite substrates on opposite sides of the dielectric substrate respectively, and arranging the metal foils facing away from each other; and after laminating the composite substrates, cutting the dielectric substrate and the composite substrates along the normal line of the dielectric substrate to form the buried structure.

[0012] In at least one embodiment of the present invention, it further includes removing the metal foil of the buried structure after forming the conductive vias to expose the second dielectric material of the buried structure.

[0013] In at least one embodiment of the present invention, disposing the buried structure in the opening includes laminating a tape on one surface of the substrate, and the tape covers the opening; disposing the buried structure on the tape so that the buried structure passes through the opening; and after disposing the buried structure on the tape, bonding the substrate and the buried structure.

[0014] Based on the above, the present invention utilizes the difference in dielectric constants between the first dielectric material and the second dielectric material to provide a radio wave signal transmission path. A part of the first dielectric material is sandwiched between the second dielectric materials, and since the dielectric constant of the first dielectric material is less than that of the second dielectric material, the radio wave signal tends to be transmitted through the part of the first dielectric material located between the two second dielectric materials. This way of radio wave transmission can avoid the loss of radio wave signals due to passing through wires, which helps to reduce the loss rate of radio wave transmission. Description of the Drawings

[0015] Aspects of the present invention can be understood from the following detailed description taken in conjunction with the accompanying drawings. It should be noted that various features are not drawn to scale in accordance with industrial practice. In fact, for clarity of discussion, the dimensions of various features may be arbitrarily increased or decreased.

[0016] Figure 1A Top view of a radio wave transmission board showing at least one embodiment of the present invention.

[0017] Figure 1B Showing along Figure 1A Cross-sectional view of the radio wave transmission board along line A-A.

[0018] Figures 2A to 2B Cross-sectional view of a method for manufacturing a radio wave transmission board showing at least one embodiment of the present invention.

[0019] Figures 3A to 3B Showing along Figure 1A Cross-sectional view of the method for manufacturing a radio wave transmission board along line A-A showing at least one embodiment of the present invention.

[0020] Figures 3C to 3D Showing along Figure 1A Cross-sectional view of the method for manufacturing a radio wave transmission board along line B-B showing at least one embodiment of the present invention. Detailed Description of the Embodiments

[0021] The present invention will be described in detail with the following embodiments. It should be noted that the following description of the embodiments of the present invention is only for illustrative purposes and is not intended to disclose all embodiments exhaustively or limit the specific embodiments of the present invention. For example, the statement "a first feature is formed on a second feature" includes various embodiments, which cover both the case where the first feature is in direct contact with the second feature and the case where additional features are formed between the first feature and the second feature so that the two are not in direct contact. In addition, the same reference numerals used in the drawings and the description will denote the same or similar elements as much as possible.

[0022] Spatial relative terms, such as "lower", "below", "beneath", "above", "over", etc., are used herein to simply describe the relationship of an element or feature shown in the figure to another element or feature. These spatial relative terms cover different orientations in addition to the orientation depicted in the figure when the device is in use or operation. In addition, when an element is rotatable (rotated 90 degrees or other angles), the spatial relative descriptive terms used herein can also be interpreted correspondingly.

[0023] Moreover, when a number or a range of numbers is described with terms such as "about" or "approximately", such terms are intended to cover numbers within a reasonable range, taking into account the natural variations that a person of ordinary skill in the art can understand during the manufacturing process. A range of numbers covers a reasonable range including the described numbers. For example, within + / - 10% of the described numbers, based on known manufacturing tolerances, which are related to the characteristics of the manufacturing feature. For example, a material layer with a thickness of "about 5 nanometers" can cover a size range from 4.25 nanometers to 5.75 nanometers, where the manufacturing tolerance of + / - 15% for depositing the material layer is known to a person of ordinary skill in the art. Further, the present invention may repeat reference numerals and / or labels in various examples. This repetition is for the purpose of simplification and clarity, and is not intended to indicate a relationship between the various embodiments and / or configurations discussed at that location.

[0024] The present invention provides a radio wave transmission board 100. Please refer to Figure 1A , the radio wave transmission board 100 includes a dielectric waveguide structure 120 and two substrate integrated waveguide structures 140. Please refer to Figure 1B , the dielectric waveguide structure 120 includes a first dielectric material 122 and two second dielectric materials 124a and 124b. The first dielectric material 122 has two grooves 122t, and the two grooves 122t are respectively located on two opposite surfaces (not labeled) of the first dielectric material 122.

[0025] As Figure 1B shown, the second dielectric materials 124a and 124b are respectively disposed in the grooves 122t, and a portion (not labeled) of the first dielectric material 122 exists between the grooves 122t. Specifically, the two grooves 122t facing each other are completely separated, so a portion of the first dielectric material 122 exists between the bottom surfaces of the two grooves 122t to prevent the two grooves 122t from communicating with each other. From the Figure 1B cross-sectional view, the dielectric waveguide structure 120 in this region has a sandwich structure, where the first dielectric material 122 is sandwiched between the two second dielectric materials 124a and 124b, and the first dielectric material 122 is in direct contact with the second dielectric materials 124a and 124b.

[0026] In particular, the dielectric constant of the first dielectric material 122 is less than the dielectric constants of the second dielectric materials 124a and 124b. For example, the dielectric constant of the first dielectric material 122 may range from 3.0 to 3.4, and may include, for example, hydrocarbon-based polymers, polyphenylene oxide (PPO), polyphenylene ether (PPE), or similar materials. On the other hand, the dielectric constants of the second dielectric materials 124a and 124b may range from 10.0 to 20.0, and may include resin systems reinforced with glass having a high dielectric constant or similar materials. However, the dielectric constants of the first dielectric material 122, the second dielectric materials 124a and 124b of the present invention are not limited to the above ranges.

[0027] The dielectric waveguide structure 120 is disposed between two substrate integrated waveguide structures 140, and the dielectric waveguide structure 120 extends from one substrate integrated waveguide structure 140 to the other substrate integrated waveguide structure 140 along the long axis direction D1. It is worth mentioning that the first dielectric material 122, the second dielectric materials 124a and 124b in the dielectric waveguide structure 120 also extend along the long axis direction D1, and one substrate integrated waveguide structure 140 is connected to the other substrate integrated waveguide structure 140 through a part of the first dielectric material 122, the second dielectric materials 124a and 124b. In other words, in this embodiment, a part of the first dielectric material 122, the second dielectric materials 124a and 124b extend in the same direction, so that the two substrate integrated waveguide structures 140 are connected to each other in this direction.

[0028] Since there is a difference value between the dielectric constant of the first dielectric material 122 and the dielectric constants of the second dielectric materials 124a and 124b, and the dielectric constant of the first dielectric material 122 is less than the dielectric constants of the second dielectric materials 124a and 124b. Therefore, when the radio wave signal is transmitted along the long axis direction D1 through the dielectric waveguide structure 120, the radio wave signal will be concentrated in a part of the first dielectric material 122 between the second dielectric materials 124a and 124b.

[0029] In other words, since the dielectric constant of the first dielectric material 122 located between the second dielectric materials 124a and 124b is lower (compared with the surrounding second dielectric materials 124a and 124b), the radio wave signal tends to pass through the first dielectric material 122. Therefore, this part of the first dielectric material 122 can be used as the main channel for the radio wave signal to be transmitted from one substrate integrated waveguide structure 140 to the other substrate integrated waveguide structure 140.

[0030] On the other hand, although most of the radio wave signals transmitted between the substrate integrated waveguide structures 140 are transmitted through the first dielectric material 122, a small portion of the radio wave signals can still be transmitted through the second dielectric materials 124a and 124b. It is worth mentioning that when the difference in the dielectric constants between the first dielectric material 122 and the second dielectric materials 124a and 124b is greater, the proportion of the radio wave signals transmitted through the first dielectric material 122 is higher. That is, the transmission of the radio wave signals is more concentrated in the first dielectric material 122 between the second dielectric materials 124a and 124b, thus reducing the loss of the radio wave signals during transmission.

[0031] The substrate integrated waveguide structure 140 includes a dielectric layer 142, two metal layers 144, and a plurality of conductive vias 146. The two metal layers 144 are respectively located on opposite sides of the dielectric layer 142, and the conductive vias 146 are disposed in the dielectric layer 142. Since the conductive vias 146 are located on the cross-section intercepted by the line segment B-B along Figure 1A it is only shown by a dashed line in Figure 1B . As Figure 1B shown, one of the metal layers 144 is connected to the other metal layer 144 through the conductive vias 146, and the conductive vias 146 are electrically connected to the two metal layers 144. The materials of the metal layer 144 and the conductive vias 146 may include copper. Although each substrate integrated waveguide structure 140 in this embodiment includes six conductive vias 146, and the conductive vias 146 are arranged in pairs, the distribution and the number of the conductive vias 146 are not limited thereto.

[0032] In particular, in this embodiment, the substrate integrated waveguide structure 140 (Substrate Integrated Waveguide; SIW) can be a rectangular waveguide element for a microwave antenna, so as to achieve the effect of feeding the radio wave signals into the dielectric waveguide structure 120. Further, when the radio wave transmission board 100 is disposed in a circuit board (not shown), the received radio wave signals can be introduced into the dielectric waveguide structure 120 through one of the substrate integrated waveguide structures 140, and transmitted to the other substrate integrated waveguide structure 140 through the dielectric waveguide structure 120.

[0033] The substrate integrated waveguide structure 140 is connected to the dielectric waveguide structure 120 through the dielectric layer 142. Specifically, the dielectric layer 142 of the substrate integrated waveguide structure 140 is directly connected to opposite ends of the dielectric waveguide structure 120. In this embodiment, the material of the dielectric layer 142 is the same as that of the first dielectric material 122, that is, the dielectric constant range of the dielectric layer 142 can fall between 3.0 and 3.4, and may include, for example, hydrocarbon polymers, parylene, polyphenylene ether, or similar dielectric bonding materials.

[0034] The present invention provides a method for manufacturing a radio wave transmission board. Taking the radio wave transmission board 100 as an example, this manufacturing method may include several steps as shown in Figures 2A to 2B and Figures 3A to 3D . First, provide a buried structure 210 (marked in Figure 2B ). For the formation steps of the buried structure 210, please refer to Figures 2A to 2B . As shown in Figure 2A , provide a dielectric substrate 202 and two composite substrates 204a and 204b. Then, the composite substrates 204a and 204b can be respectively bonded to the opposite sides of the dielectric substrate 202 by means of hot pressing. The material of the dielectric substrate 202 may include, for example, a resin substrate of a hydrocarbon group, and its dielectric constant range may fall between 3.0 and 3.4.

[0035] It should be particularly mentioned that the thickness range of the composite substrate 204a (and the composite substrate 204b) may fall between 0.13 mm and 0.5 mm, such as 0.5 mm, and may each include a double-layer metal foil 204c and a resin substrate 204g. The composite substrates 204a and 204b may be copper clad laminates (CCL), so the metal foil 204c may be copper foil. Specifically, the two layers of metal foils 204c are respectively located on the opposite sides of the resin substrate 204g.

[0036] In this embodiment, one layer of the metal foil 204c can be removed by means of etching or grinding to form a composite substrate 204a that only includes one layer of metal foil 204c as shown in Figure 2A . The resin substrates 204g of the composite substrates 204a and 204b are bonded to the dielectric substrate 202 facing each other, that is, the metal foil 204c of the composite substrate 204a and the metal foil 204c of the composite substrate 204b are arranged back to back. In some embodiments, the resin substrate 204g may include materials such as glass fiber, and the dielectric constant range of the resin substrate 204g may fall between 10.0 and 20.0.

[0037] Please refer to Figure 2A and Figure 2B together. After bonding the composite substrates 204a and 204b, the dielectric substrate 202 and the composite substrates 204a and 204b can be cut along the normal N1 of the dielectric substrate 202 by means of machining (for example, CNC machining) or laser cutting to form the buried structure 210. This buried structure 210 includes a first dielectric material 122' and two second dielectric materials 124a and 124b, where the second dielectric materials 124a and 124b are respectively located on the opposite sides of the first dielectric material 122'. Please refer to FIG. 1 andFigure 2B For this embodiment, the width w of the embedded structure 210 may range from 1.27 mm to 2.54 mm, such as 2 mm. However, the width w of the embedded structure 210 in the present invention is not limited to the above range.

[0038] On the other hand, please refer to Figure 3A , a substrate 305 is provided. This substrate 305 includes a dielectric layer 305i and two metal layers 305m, and these two metal layers 305m are respectively located on opposite sides of the dielectric layer 305i. The material of the dielectric layer 305i may be the same as that of the first dielectric material 122’, and the material of the metal layer 305m may include copper. In particular, the substrate 305 may be formed by thermally pressing and laminating several layers of prepreg. For example, in this embodiment, two layers of prepreg 301 are stacked on each other, and two layers of prepreg 302 including the metal layer 305m are stacked on the outside of the prepreg 301, and then the substrate 305 is formed by thermally pressing and laminating.

[0039] Next, please refer to Figure 3B A part of the substrate 305 is removed to form an opening 305t, and this opening 305t communicates with the opposite two surfaces 305f and 305s of the substrate 305. After the opening 305t is formed, the embedded structure 210 is disposed in the opening 305t. In this embodiment, the step of disposing the embedded structure 210 in the opening 305t includes: laminating a tape 307 (for example, polyethylene terephthalate tape) on the surface 305s of the substrate 305, and the tape 307 covers the opening 305t. Then, the embedded structure 210 is disposed on the tape 307 so that the embedded structure 210 passes through the opening 305t. After the embedded structure 210 is disposed on the tape 307, the substrate 305 and the embedded structure 210 can be joined by thermally pressing and laminating. Then, the tape 307 is removed.

[0040] In particular, after the substrate 305 and the embedded structure 210 are joined, the dielectric layer 305i of the substrate 305 will be connected to the first dielectric material 122’ of the embedded structure 210 and the second dielectric materials 124a and 124b. Further, the surfaces 305f and 305s of the substrate 305 respectively expose the second dielectric materials 124a and 124b of the embedded structure 210 (viewed from the perspective of ignoring the metal foil 204c). In other words, the way of disposing the embedded structure 210 in the opening 305t is that the first dielectric material 122’ is sandwiched between the second dielectric materials 124a and 124b, and the second dielectric materials 124a and 124b respectively face the outside of the substrate 305.

[0041] Please refer to Figure 3C, after the buried structure 210 is disposed within the opening 305t, a plurality of conductive vias 146 are formed in the substrate 305. Two metal layers 305m of the substrate 305 are electrically connected to each other through the conductive vias 146, and the conductive vias 146 are distributed on opposite sides of the buried structure 210. Specifically, a part of the conductive vias 146 are located in the left substrate 305 (i.e., on the left side of the buried structure 210), and another part of the conductive vias 146 are located in the right substrate 305 (i.e., on the right side of the buried structure 210).

[0042] The step of forming the conductive vias 146 may include: forming a plurality of vias (not shown) that communicate the surface 305f and 305s in the substrate 305 by mechanical drilling. Then, a metal layer (such as a copper layer) is deposited on the inner wall of the via by, for example, Plating Through Hole (PTH) to form the conductive via 146.

[0043] Please refer to Figure 3D , after the conductive vias 146 are formed, the metal foil 204c of the buried structure 210 may be removed by etching to expose the second dielectric materials 124a and 124b of the buried structure 210. In addition, in this embodiment, after the conductive vias 146 are formed, the metal layer 305m of the substrate 305 may also be patterned by etching to form the metal layer 144 as shown in Figure 1A the figure.

[0044] In summary, at least one embodiment of the present invention utilizes the difference in dielectric constants between the first dielectric material and the second dielectric material to provide a radio wave signal transmission path. A part of the first dielectric material is sandwiched between the second dielectric materials and forms a buried structure stacked like a sandwich. Since the dielectric constant of the first dielectric material is less than that of the second dielectric material, the radio wave signal tends to be transmitted through a part of the first dielectric material located between the two second dielectric materials. This way of forming a radio wave transmission path relying on the difference value of the dielectric materials can avoid the loss of the radio wave signal due to passing through a metal wire (such as a copper wire), so it helps to reduce the loss rate of radio wave transmission.

[0045] Although the embodiments of the present invention have been disclosed above, they are not intended to limit the embodiments of the present invention. Any person skilled in the art can make some modifications and refinements without departing from the spirit and scope of the embodiments of the present invention. Therefore, the protection scope of the embodiments of the present invention shall be determined by the scope defined by the appended claims.

[0046]

Symbol Description

[0047] 100: Radio wave transmission board

[0048] 120: Dielectric waveguide structure

[0049] 122, 122’: First dielectric material

[0050] 122t: Groove

[0051] 305f, 305s: Surface

[0052] 124a, 124b: Second dielectric material

[0053] 140: Substrate integrated waveguide structure

[0054] 142, 305i: Dielectric layer

[0055] 144, 305m: Metal layer

[0056] 146: Conductive via

[0057] 202: Dielectric substrate

[0058] 204a, 204b: Composite substrate

[0059] 204c: Metal foil

[0060] 204g: Resin substrate

[0061] 210: Embedded structure

[0062] 301, 302: Bonding film

[0063] 305: Substrate

[0064] 305t: Opening

[0065] 307: Tape

[0066] A - A, B - B: Line segment

[0067] D1: Long axis direction

[0068] N1: Normal line

[0069] w: Width.

Claims

1. A radio wave transmission board, characterized in that, it comprises: a dielectric waveguide structure, comprising: a first dielectric material having two grooves respectively located on opposite surfaces of the first dielectric material, with a portion of the first dielectric material existing between the grooves; and two second dielectric materials respectively disposed in the grooves, wherein the dielectric constant of the first dielectric material is less than the dielectric constant of the second dielectric material; and two substrate integrated waveguide structures, wherein the dielectric waveguide structure is disposed between the substrate integrated waveguide structures, and one of the substrate integrated waveguide structures is connected to the other of the substrate integrated waveguide structures through the portion of the first dielectric material and the second dielectric material.

2. The radio wave transmission board according to claim 1, characterized in that, the dielectric constant of the first dielectric material ranges from 3.0 to 3.4, and the dielectric constant of the second dielectric material ranges from 10.0 to 20.

0.

3. The radio wave transmission board according to claim 1, characterized in that, the dielectric waveguide structure extends from one of the substrate integrated waveguide structures to the other along the long axis direction, wherein the portion of the first dielectric material and the second dielectric material extend along the long axis direction.

4. The radio wave transmission board according to claim 1, characterized in that, each of the substrate integrated waveguide structures comprises: a dielectric layer; two metal layers respectively located on opposite sides of the dielectric layer; and a plurality of conductive vias disposed in the dielectric layer, and one of the metal layers is connected to the other of the metal layers through the conductive vias, wherein the conductive vias are electrically connected to the metal layers.

5. The radio wave transmission board according to claim 3, characterized in that, the substrate integrated waveguide structure is connected to the dielectric waveguide structure through the dielectric layer.

6. The radio wave transmission board according to claim 3, characterized in that, the material of the dielectric layer is the same as that of the first dielectric material.

7. A manufacturing method of a radio wave transmission board, characterized in that, it comprises: providing a buried structure, the buried structure comprising: a first dielectric material; and two second dielectric materials, wherein the second dielectric materials are respectively located on opposite sides of the first dielectric material, and the dielectric constant of the first dielectric material is less than the dielectric constant of the second dielectric material; providing a substrate, the substrate comprising: a dielectric layer; and two metal layers respectively located on opposite sides of the dielectric layer; removing a portion of the substrate to form an opening that communicates with opposite surfaces of the substrate; disposing the buried structure in the opening, wherein the dielectric layer of the substrate is connected to the first dielectric material and the second dielectric material of the buried structure, and the surfaces of the substrate respectively expose the second dielectric materials of the buried structure; and After disposing the embedded structure within the opening, a plurality of conductive vias are formed in the substrate, wherein the metal layers are electrically connected to each other through the conductive vias, and the conductive vias are distributed at opposite ends of the embedded structure.

8. The method according to claim 7, wherein, providing the embedded structure comprises: providing a dielectric substrate; providing two composite substrates, wherein each of the composite substrates comprises a metal foil; on opposite sides of the dielectric substrate, respectively attaching the composite substrates and arranging the metal foils to face away from each other; and after attaching the composite substrates, cutting the dielectric substrate and the composite substrates along the normal of the dielectric substrate to form the embedded structure.

9. The method according to claim 8, wherein, further comprising: after forming the conductive vias, removing the metal foil of the embedded structure to expose the second dielectric material of the embedded structure.

10. The method according to claim 7, wherein, disposing the embedded structure within the opening comprises: attaching a tape on one of the surfaces of the substrate, and the tape covering the opening; on the tape, disposing the embedded structure such that the embedded structure passes through the opening; and after disposing the embedded structure on the tape, bonding the substrate and the embedded structure.