Apparatus and method for filling gaps

Abstract

Apparatus and methods for filling gaps are disclosed. Exemplary methods include performing one or more deposition cycles, and performing vacuum ultraviolet radiation and optional annealing.

Description

Technical Field

[0001] The present disclosure generally relates to methods and apparatuses for semiconductor manufacturing. Background Art

[0002] The miniaturization of semiconductor devices has increased the speed and density of integrated circuits. However, due to the scaled geometries, it has become difficult to fill the gaps in the substrate for shallow trench isolation, inter-metal, and passivation layers with high-quality materials that are completely void-free. Summary of the Invention

[0003] The present invention content is provided to introduce some concepts in a simplified form. These concepts are further described in detail in the detailed description of the exemplary embodiments disclosed below. The present invention content is not intended to identify the key features or essential features of the claimed subject matter, nor is it intended to be used to limit the scope of the claimed subject matter.

[0004] Various embodiments of the present disclosure relate to methods that can be used to fill gaps on a substrate. Although the ways in which various embodiments of the present disclosure address the disadvantages of existing methods are discussed in more detail below, generally, various embodiments of the present disclosure provide an improved reactor system for filling gaps on a substrate and an improved method for filling gaps on a substrate. As explained in more detail below, the use of a multi-chamber reactor system and the corresponding method can reduce contamination associated with material deposition, can provide a deposited material with desired properties, and / or can increase the yield associated with the deposition of a material with desired properties and / or characteristics.

[0005] According to at least one embodiment of the present disclosure, a multi-chamber reactor system includes a first reaction chamber configured to deposit a silicon-containing layer into a gap on a substrate to form a deposited layer. The system further includes a second reaction chamber configured to expose the deposited layer to vacuum ultraviolet radiation to form an exposed layer; and a controller. The controller is configured to provide a substrate including at least one gap in the first reaction chamber; perform a deposition cycle in the first reaction chamber; move the substrate from the first reaction chamber to the second reaction chamber; and perform an exposure process in the second reaction chamber.

[0006] In some embodiments, the controller is configured to perform a plurality of deposition cycles in the first reaction chamber before moving the substrate to the second reaction chamber.

[0007] The multi-chamber reactor system may further include a third reaction chamber configured to deposit an additional silicon-containing layer on the surface of the exposed layer and a fourth reaction chamber configured to process the exposed layer. In such a case, the controller may be configured to move the substrate from the first reaction chamber to the second reaction chamber, from the second reaction chamber to the third reaction chamber, and from the third reaction chamber to the fourth reaction chamber to form a layer containing silicon and oxygen. Alternatively, the controller may be configured to move the substrate between the first and second reaction chambers and / or between the third and fourth reaction chambers to repeat the deposition and processing / exposure steps described herein. Two or more (e.g., four) reaction chambers may form part of a processing module.

[0008] According to a further exemplary embodiment of the present disclosure, a method for depositing a layer containing silicon and oxygen includes providing a substrate in a first reaction chamber, wherein the substrate includes at least one gap; depositing a silicon-containing layer into the gap in the substrate in the first reaction chamber to form a deposited layer; and exposing the deposited layer in the second reaction chamber to vacuum ultraviolet radiation to form an exposed layer containing silicon and oxygen. The first reaction chamber and the second reaction chamber may form part of a module.

[0009] These and other embodiments will become apparent to those skilled in the art from the following detailed description of certain embodiments, when considered in conjunction with the accompanying drawings. The invention is not limited to any particular embodiment disclosed. BRIEF DESCRIPTION OF THE DRAWINGS

[0010] A more complete understanding of the exemplary embodiments of the present disclosure can be obtained by reference to the detailed description and the claims when considered in conjunction with the following illustrative drawings.

[0011] Figure 1 A multi-chamber reactor system is shown in accordance with at least one embodiment of the present disclosure.

[0012] Figure 2 A method is shown in accordance with at least one embodiment of the present disclosure.

[0013] Figure 3 A reaction chamber suitable for use in accordance with an embodiment of the present disclosure is shown.

[0014] It should be understood that the elements in the drawings are shown for simplicity and clarity and are not necessarily drawn to scale. For example, the dimensions of some of the elements in the figures may be exaggerated relative to other elements to assist in improving understanding of the illustrated embodiments of the present disclosure. DETAILED DESCRIPTION

[0015] Although certain embodiments and examples are disclosed below, those skilled in the art will understand that the invention extends beyond the specifically disclosed embodiments and / or uses of the invention and their obvious modifications and equivalents. Accordingly, it is intended that the scope of the disclosed invention not be limited by the specifically disclosed embodiments described below.

[0016] Exemplary embodiments of the present disclosure provide improved systems and methods for filling gaps on a substrate. The exemplary systems and methods can be used to fill the gaps with a material containing silicon and oxygen through a conversion reaction. In addition, the exemplary systems and methods can be used to deposit, expose, and optionally process a layer containing silicon and nitrogen or silicon and oxygen in a single processing module, such as without exposing the substrate to environmental conditions. Accordingly, any surface contamination caused by performing pre - deposition processing and / or exposure to environmental conditions can be mitigated or avoided.

[0017] In the present disclosure, a gas can include a material that is a gas at normal temperature and pressure (NTP), an evaporated solid, and / or an evaporated liquid, and can be composed of a single gas or a gas mixture, depending on the context. A gas other than a process gas, i.e., a gas that is not introduced through a gas distribution component, a multi - port injection system, other gas distribution devices, etc., can be used, for example, to seal a reaction space, and can include a sealing gas, such as a noble gas.

[0018] In some cases, the term "precursor" can refer to a compound that participates in a chemical reaction to produce another compound, particularly a compound that constitutes a film matrix or a film backbone. In certain cases, the term reactant can be used interchangeably with the term precursor. The term inert gas can refer to a gas that does not participate in a chemical reaction and / or does not become part of the film matrix to a perceptible extent. Exemplary inert gases include He, Ar, H 2 、N 2 (e.g., when not activated by plasma) and any combination thereof.

[0019] As used herein, the term "substrate" can refer to any one or more underlying materials that can be used to form or on which a device, circuit, or film can be formed. The substrate can include a bulk material, such as silicon (e.g., single - crystal silicon), and can include one or more layers covering the bulk material. In addition, the substrate can include various topologies, such as grooves, lines, etc., formed within or on at least a portion of the substrate layer. By way of example, the substrate can include a surface containing a first material and a second material, as described in more detail below.

[0020] As used herein, the term "film and / or layer" can refer to any continuous or discontinuous structure and material, such as materials deposited by the methods disclosed herein. For example, a film and / or layer can include two-dimensional materials, three-dimensional materials, nanoparticles, or even partial or complete molecular layers or partial or complete atomic layers or atomic and / or molecular clusters. A film or layer can include a material or layer having pinholes, which can be at least partially continuous. Alternatively, a film or layer can consist entirely of isolated islands.

[0021] As used herein, the term "cyclic deposition" can refer to a process that includes sequentially introducing precursors and / or reactants into a reaction chamber and / or sequentially pulsed plasma power to deposit a layer on a substrate. Cyclic deposition processes include processing techniques such as atomic layer deposition (ALD), cyclic chemical vapor deposition (CCVD), and plasma-enhanced ALD and CCVD.

[0022] As used herein, the term cyclic chemical vapor deposition can refer to any process in which a substrate is sequentially exposed to two or more volatile precursors / reactants that react and / or decompose on the substrate to produce a desired deposit.

[0023] "At least one", "one or more", and "and / or" are open-ended expressions that are both conjunctive and disjunctive in operation. For example, each of the expressions "at least one of A, B, and C", "at least one of A, B, or C", "one or more of A, B, and C", "one or more of A, B, or C", and "A, B, and / or C" means A alone, B alone, C alone, A and B together, A and C together, B and C together, or A, B, and C together. When each of A, B, and C in the above expressions refers to an element (e.g., X, Y, and Z) or a class of elements (e.g., X 1 -X n ,Y 1 -Y m and Z 1 -Z o ), the phrase is intended to refer to a single element selected from X, Y, and Z, a combination of elements selected from the same class (e.g., X 1 and X 2 ), and a combination of elements selected from two or more classes (e.g., Y 1 and Z o ).

[0024] A layer containing silicon and nitrogen can contain, consist of, or consist essentially of a silicon nitride material. A layer consisting of silicon nitride can contain an acceptable amount of impurities, such as carbon, chlorine, or other halogens, and / or hydrogen, which may be derived from one or more precursors used to deposit the silicon nitride layer. As used herein, SiN or silicon nitride refers to a compound containing silicon and nitrogen. SiN can be represented as SiN x, wherein x varies from, for example, about 0.5 to about 2.0, and some Si-N bonds are formed. In some cases, x can vary from about 0.9 to about 1.7, from about 1.0 to about 1.5, or from about 1.2 to about 1.4. In some embodiments, silicon nitride is formed, wherein Si has an oxidation state of +IV, and the amount of nitride in the material can vary. The silicon nitride can include silicon carbonitride (SiCN), which includes silicon, carbon, and nitrogen.

[0025] The layer comprising silicon and an oxide can comprise, consist essentially of, or consist of a silicon oxide material. The layer consisting of silicon oxide can contain acceptable amounts of impurities, such as carbon, chlorine, or other halogens and / or hydrogen, which may be derived from one or more precursors used to deposit the silicon nitride layer. As used herein, SiO x or silicon oxide refers to a compound containing silicon and oxygen. SiO can be represented as SiO x , wherein x varies from, for example, about 0.5 to about 2.0, and some Si-O bonds are formed. In some cases, x can vary from about 0.9 to about 1.7, from about 1.0 to about 1.5, or from about 1.2 to about 1.4. In some embodiments, silicon oxide is formed, wherein Si has an oxidation state of +IV, and the amount of oxide in the material can vary.

[0026] In some embodiments, the layer comprising silicon and nitrogen further comprises carbon. These films comprise, consist essentially of, or consist of a silicon carbonitride material. The layer consisting of silicon carbonitride can contain acceptable amounts of impurities, such as chlorides or other halogens and / or hydrogen, which may be derived from one or more precursors used to deposit the silicon carbonitride layer. As used herein, SiCN or silicon carbonitride refers to a compound comprising silicon, carbon, and nitrogen.

[0027] As used herein, a structure can include a substrate as described herein. A structure can include one or more layers covering the substrate, such as one or more layers formed according to the methods described herein.

[0028] In addition, in the present disclosure, any two numbers of a variable can form a feasible range of the variable, and any indicated range can include or exclude endpoints. Further, any value of the indicated variable (whether or not denoted by "about") can refer to an exact value or an approximate value, and includes equivalents, and can refer to an average value, a median value, a representative value, a majority value, etc. In addition, in the present disclosure, the terms "comprising," "consisting of," and "having" can, in some embodiments, independently refer to generally or broadly including, containing, substantially consisting of, or consisting of. It should be understood that when a composition, method, device, etc. is referred to as including certain features, this means that it includes those features and does not necessarily exclude the presence of other features, provided that they do not render the claims unfeasible. Nevertheless, the term including or containing or having includes the meaning of consisting of, i.e., the case where the composition, method, device, etc. under discussion includes only the listed features, components, and / or steps and does not contain any other features, components, steps, etc., and includes substantially consisting of.

[0029] In the present disclosure, the meaning of any definition does not necessarily exclude the ordinary and customary meaning in some embodiments.

[0030] According to at least one embodiment of the present disclosure, a multi-chamber reactor system includes a first reaction chamber configured to deposit a silicon-containing layer into a gap on a substrate to form a deposited layer. The system further includes a second reaction chamber configured to expose the deposited layer to vacuum ultraviolet radiation to form an exposed layer; and a controller. The controller is configured to provide a substrate including at least one gap in the first reaction chamber; perform a deposition cycle in the first reaction chamber; move the substrate from the first reaction chamber to the second reaction chamber; and perform a conversion process in the second reaction chamber.

[0031] According to an example of these embodiments, the controller is configured to perform a plurality of deposition cycles in the first reaction chamber before moving the substrate to the second reaction chamber.

[0032] The multi-chamber reactor system can further include a third reaction chamber configured to deposit an additional silicon-containing layer on the surface of the exposed layer and a fourth reaction chamber configured to process the exposed layer. In some embodiments, the controller can be configured to move the substrate from the first reaction chamber to the second reaction chamber, from the second reaction chamber to the fourth reaction chamber, and from the fourth reaction chamber to the third reaction chamber to form a layer containing silicon and oxygen.

[0033] In some embodiments, the controller may be configured to move a substrate from a first reaction chamber to a second reaction chamber, from the second reaction chamber to a third reaction chamber, and from the third reaction chamber to a fourth reaction chamber to form a layer comprising silicon and oxygen. Alternatively, the controller may be configured to move the substrate between the first and second reaction chambers and / or between the third and fourth reaction chambers to repeat the deposition and processing / exposure steps described herein. Two or more (e.g., four) reaction chambers may form part of a processing module. The order of the reaction chambers in which the controller is configured to move the substrate may vary and may be any other order not specifically listed in the present disclosure.

[0034] According to a further exemplary embodiment of the present disclosure, a method for depositing a layer comprising silicon and oxygen, the method comprising providing a substrate in a first reaction chamber, wherein the substrate comprises at least one gap; depositing a layer comprising silicon into the gap of the substrate in the first reaction chamber to form a deposited layer; exposing the deposited layer in a second reaction chamber to vacuum ultraviolet radiation to form an exposed layer comprising silicon and oxygen. In some embodiments, the first reaction chamber and the second reaction chamber may form part of a module.

[0035] In some embodiments of the deposition step of the present invention, a silicon-containing precursor is provided into the reaction chamber. In some embodiments, the deposited layer comprises silicon nitride. In some embodiments, the deposited layer comprises silicon oxide. Additionally, a plasma pulse is provided, which includes exposing the substrate to plasma treatment. The plasma treatment allows the deposited film to polymerize and transform into a flowable film. Then, this flowable film will fill the trenches on the substrate without forming any voids. The plasma treatment includes generating plasma using a plasma gas. The plasma gas includes at least nitrogen and optionally one or more noble gases. In some embodiments, the inert gas is argon or helium.

[0036] In some embodiments, the silicon-containing precursor may be any precursor comprising silicon. In some embodiments, the silicon-containing precursor is selected from N-(diethylaminosilyl)-N-ethylethylamine and N,N'-dimethylsilyldiamine.

[0037] In some embodiments, the deposition step further includes providing a carbon-containing precursor into the reaction chamber. In some embodiments, the deposited layer comprises silicon carbonitride. In some embodiments, the carbon-containing precursor is selected from hexamethyldisilazane, hexamethyltrisilazane, tetramethyldivinyldisilazane, tetramethyldisilazane, and tetraisocyanatosilane.

[0038] In some exemplary embodiments of the vacuum ultraviolet radiation step according to the present invention, the deposited film is exposed to vacuum ultraviolet radiation. In the vacuum ultraviolet chamber, oxygen is supplied simultaneously or at least overlapping with the radiation. In the presence of ultraviolet radiation, molecular oxygen will dissociate to form ozone and atomic oxygen. These will then react with the layer deposited in the deposition chamber. In some embodiments, the deposited silicon nitride layer is converted into a silicon oxide layer. In some embodiments, the deposited silicon carbonitride layer is converted into a silicon oxycarbonitride layer.

[0039] In some embodiments, the properties of the silicon oxide layer are changed by ultraviolet radiation. In some embodiments, the wet etching rate ratio is reduced. This reduction can be explained by the reaction between the atomic oxygen from the oxygen fed into the ultraviolet radiation chamber and the hydrogen bonded to the silicon oxide layer. When hydrogen and oxygen atoms react, they evaporate from the layer surface as water. The reduction in the amount of hydrogen in the silicon oxide layer then increases the wet etching rate ratio of the layer. In some embodiments, compared with the conventional inhibitor process, by using the process described currently, the processing time is reduced. This results in higher productivity; in other words, compared with the conventional inhibitor process carried out in one processing chamber, more processed wafers can be handled within a certain time limit.

[0040] In some embodiments, ultraviolet radiation can cure any possible seams formed during the step of depositing a silicon-containing layer onto a substrate. In other words, by using ultraviolet radiation, the seams can be repaired or made to disappear. Ultraviolet radiation activates the deposited material in the seams to form new chemical bonds to bond the seams. In some embodiments, a gas is provided into the reaction chamber while ultraviolet radiation is applied. Ultraviolet radiation activates the gas to form reactive species, which then react within the seams to form new chemical bonds within the seams. In some embodiments, the gas provided into the reaction chamber is selected from NH 3 , silane, alkoxysilane, alkylaminosilane, alkoxytitanium, alkylaminotitanium, titanium tetrachloride, and trimethylaluminum.

[0041] Now turning to the drawings, Figure 1 a multi-chamber reactor system 100 according to an embodiment of the present disclosure is shown. In the illustrated embodiment, the multi-chamber reactor system 100 includes a first reaction chamber RC1, a second reaction chamber RC2, a third reaction chamber RC3, and a fourth reaction chamber RC4. The configuration of RC1-RC4 can vary according to the desired process. Exemplary reaction chambers suitable for use as one or more of RC1-RC4 are described in more detail below in conjunction with Figure 3 more detail.

[0042] According to an embodiment of the present disclosure, at least one of RC1-RC4 is configured to deposit a silicon-containing film on a substrate surface to form a deposited layer containing silicon oxide. For example, RC1 and RC3 can be configured to deposit a silicon-containing film on a substrate surface.

[0043] According to a further embodiment of the present disclosure, at least one of RC1 - RC4 is configured to expose the deposited layer to vacuum ultraviolet radiation. For example, RC2 and / or RC4 can be configured to process the deposited silicon nitride.

[0044] According to a further embodiment of the present disclosure, at least one of RC1 - RC4 is configured to treat the exposed layer with thermal annealing. For example, RC2 and / or RC4 can be configured to process the deposited silicon nitride.

[0045] The multi - chamber reactor system 100 may further include a substrate handler SH configured to move a substrate between two or more of the RC1 - RC4 reaction chambers. For example, the substrate handler SH (and the controller 114) can be configured to move the substrate between RC1, RC2, RC3, and RC4, and optionally repeat. In these cases, the third reaction chamber RC3 can be configured to deposit an additional silicon - containing layer on the surface of the treated and / or exposed layer, and RC4 can be configured to process the silicon - containing layer. Additionally or alternatively, the substrate handler SH (and the controller 114) can move the substrate between RC1 and RC2 and repeat and / or move the substrate between RC3 and RC4 and repeat.

[0046] The multi - chamber reactor system 100 may further include silicon precursor sources 102, 104 coupled to, for example, RC1 and / or RC3. Each silicon precursor source 102, 104 includes a container and a silicon precursor therein. Exemplary suitable silicon precursors are as described above. Although shown separately, the silicon precursor sources 102, 104 can be a single precursor source.

[0047] The multi - chamber reactor system 100 may further include carbon - containing precursor sources 106, 108 coupled to one or more of the reaction chambers RC1, RC4. Each carbon - containing precursor source 106, 108 includes a container and a carbon - containing precursor. Exemplary carbon - containing reactants are also as described above.

[0048] The controller 114 can be configured to move substrates within the multi - chamber reactor system 100 and implement the deposition and processing procedures described herein. For example, the controller 114 can be configured to provide a substrate in a first reaction chamber, perform a deposition cycle in the first reaction chamber, move the substrate to a second reaction chamber, and perform an exposure process in the second reaction chamber. In a particular embodiment, the controller 114 can be configured to perform a deposition cycle in the first reaction chamber, where the deposition cycle includes pulsing a silicon precursor from the silicon precursor source 102 into the first reaction chamber RC1, providing a nitrogen - containing reactant from the nitrogen - containing reactant source 106 to the first reaction chamber RC1, and providing deposition plasma power to form active species from the nitrogen - containing reactant.

[0049] Additionally or alternatively, the controller 114 may be configured to perform an exposure process in the second reaction chamber RC2, where the exposure process includes providing an oxygen-containing reactant from the oxygen reactant source 110 to the second reaction chamber RC2 and providing vacuum ultraviolet radiation to form active species from the oxygen-containing reactant. Additionally or alternatively, the controller 114 may be configured to perform an annealing process in the third reaction chamber RC3, where the annealing process includes heating the reaction chamber to a temperature above 400 °C. In some embodiments, the controller 114 is configured to perform a plurality of deposition cycles (e.g., between about 1 and about 500 times or between about 1 and about 300 times) in the first reaction chamber RC1 before moving the substrate to the second reaction chamber RC2. In some cases, the controller 114 is further configured to move the substrate from the second reaction chamber RC2 to the first reaction chamber RC1.

[0050] According to a further example of the present disclosure, the controller 114 may be further configured to increase the flow rate of the oxygen-containing reactant after the substrate is located within the second reaction chamber. The controller 114 may be further configured to decrease the flow rate of the oxygen-containing reactant before removing the substrate from the second reaction chamber. One or both of the ramp rates may be relatively constant.

[0051] Figure 2 A method 200 of depositing a silicon oxide layer according to an additional embodiment of the present disclosure is shown.

[0052] The method 200 includes the steps of: providing a substrate within a reaction chamber (step 202), depositing a silicon-containing layer (step 204), exposing the silicon-containing layer to vacuum ultraviolet (VUV) radiation (step 206), optionally treating the exposed layer with a thermal annealing step (step 208) to form a silicon oxide layer (step 210).

[0053] During step 202, the substrate is provided into the reaction chamber of the reactor. The substrate includes at least one gap. Optionally, the reactor including the reaction chamber may be provided with a heater to activate the reaction by raising the temperature of one or more substrates and / or reactants / precursors.

[0054] During step 202, the substrate may reach the temperature and pressure required for step 204. For example, the temperature within the reaction chamber (e.g., the temperature of the substrate or the substrate support) may be between about 50 °C and about 200 °C or between about 80 °C and about 150 °C. The pressure within the reaction chamber may be from about 0.5 to about 50 Torr or from about 1 to about 30 Torr.

[0055] During step 204, one or more deposition cycles are performed to deposit a silicon-containing material on the substrate surface. In some cases, the deposited silicon-containing layer is flowable. In some embodiments, the deposition process includes providing a silicon precursor. In some embodiments, the deposition process includes providing a silicon precursor and a plasma pulse. In some embodiments, the deposition process includes providing a silicon precursor, providing a second precursor, and a plasma pulse. In embodiments that include a plasma pulse, the plasma polymerizes the deposited layer to make it flowable.

[0056] In one embodiment, the deposition cycle includes: pulsing a silicon precursor from a silicon precursor source into a first reaction chamber; and providing deposition plasma power to form reactive species from the reactants to deposit a layer comprising silicon nitride. In one embodiment, the deposition cycle includes: pulsing a silicon precursor from a silicon precursor source into a first reaction chamber; pulsing a carbon precursor from a carbon precursor source into the first reaction chamber; and providing deposition plasma power to form reactive species from the reactants to deposit a layer comprising silicon carbonitride. In one embodiment, the deposition cycle includes: pulsing a silicon precursor from a silicon precursor source into a first reaction chamber; and providing deposition plasma power to form reactive species from the reactants to deposit a layer comprising silicon oxide.

[0057] During step 204, plasma power is provided during a plasma period to form reactive species from the reactant gas. The deposition plasma power can have a frequency between about 100 kHz and about 60 MHz and / or between about 12 MHz and about 14 MHz. For a 300 mm diameter substrate, the plasma power can have a power between about 10 and 2000 W or between about 100 and 900 W, or about 30 W to about 500 W, or for substrates of different cross-sectional sizes, particularly for CCP processes, have a similar power density. For IPC processes, the power level may be higher. The duration of step 204 can be between about 0.05 seconds and about 60 seconds, or between about 0.5 seconds and about 30 seconds.

[0058] In some embodiments, multiple deposition cycles are performed before the substrate is moved to the second reaction chamber.

[0059] During step 206, the deposited layer is exposed to VUV radiation in the second reaction chamber. An oxygen-containing reactant gas stream is fed into the second reaction chamber. In some embodiments, the VUV radiation decomposes oxygen into ozone and reactive oxygen species, which then react with the surface of the deposited layer. In some embodiments, the reactive oxygen species can reach a depth of about 120 nm within the gap. In some embodiments, when a deposited layer containing silicon and nitrogen is exposed to VUV radiation, the exposure to VUV radiation converts the layer into a conversion layer containing silicon oxide. In some embodiments, exposure to VUV radiation converts a layer containing silicon carbonitride into a conversion layer containing silicon oxycarbonitride. In some embodiments, the ultraviolet radiation is provided by an excimer lamp. In some embodiments, the ultraviolet radiation source is a low-pressure mercury lamp. In some embodiments, the wavelength of the vacuum ultraviolet is 100 - 450 nm. In some embodiments, the wavelength of the vacuum ultraviolet is 172 nm. After the exposure step 206, in some embodiments, the substrate is moved to a third reaction chamber for an optional annealing step 208.

[0060] During optional step 208, the exposed layer is subjected to an annealing step. In some embodiments, the annealing step includes thermal annealing, where the substrate is subjected to a temperature between 400 °C and 600 °C. In some embodiments, the substrate is subjected to a temperature of about 500 °C or about 550 °C. During step 208, the pressure within the reaction chamber can be between about 1 Torr and about 30 Torr, or between about 2.6 Torr and about 15 Torr.

[0061] Thermal annealing densifies the formed layer as it can reduce the number of Si - H bonds in the formed layer. Optionally, after thermal annealing, the substrate can be moved to a fourth reaction chamber or back to the first reaction chamber to repeat the deposition of the silicon-containing layer 204.

[0062] Finally, during step 210, a silicon oxide-containing layer is formed. In some embodiments, the formed layer is silicon oxide. In some embodiments, the formed layer is silicon oxycarbonitride.

[0063] Now turning to Figure 3 , a reactor system 300 is shown in accordance with a further embodiment of the present disclosure. The reactor system 300 can be used to perform one or more of the steps or sub-steps described herein, and / or to form one or more of the device structures or portions thereof described herein.

[0064] The reactor system 300 includes a pair of conductive flat plate electrodes 314, 318 that are parallel and face each other within the interior 301 (reaction zone) of the reaction chamber 302. By applying plasma power, such as from the plasma power source 308, to one electrode (e.g., electrode 318) and electrically grounding the other electrode (e.g., electrode 314), a plasma can be excited within the reaction chamber 302. A temperature regulator 303 can be provided in the lower platform 314 (lower electrode), and the temperature of the substrate 322 placed thereon can be maintained at a desired temperature, such as the aforementioned temperature. The electrode 318 can be used as a gas distribution device, such as a shower plate or a shower head. One or more gas lines (e.g., the reactant gas line 304 and the precursor gas line 306 that are respectively coupled to the reactant source and the precursor source) can be used to introduce precursor gases, reactant gases, carrier gases, or inert gases (if any) into the reaction chamber 302. For example, an inert gas and a reactant (e.g., as described above) can be introduced into the reaction chamber 302 using the line 304, and / or a precursor and a carrier gas (e.g., the inert gas as described above) can be introduced into the reaction chamber 302 using the line 306. Although two inlet gas lines 304, 306 are shown, the reactor system 300 can include any suitable number of gas lines.

[0065] In the reaction chamber 302, a circular conduit 320 having an exhaust gas line 321 can be provided through which the gas in the interior 301 of the reaction chamber 302 can be discharged to the discharge source 310. In addition, the transfer chamber 323 can be provided with a seal gas line 329 to introduce a seal gas into the interior 301 of the reaction chamber 302 via the interior (transfer zone) of the transfer chamber 323, where a partition plate 325 for separating the reaction zone 301 and the transfer chamber 323 can be provided (a gate valve through which the substrate is transferred into or out of the transfer chamber 323 is omitted in this figure). The transfer chamber 323 can also be provided with an exhaust gas line 327 coupled to the exhaust source 310. In some embodiments, a continuous flow of the carrier gas to the reaction chamber 302 can be achieved using a flow-through system (FPS).

[0066] The reactor system 300 may include one or more controllers 312 that are programmed or otherwise configured to cause one or more of the method steps described herein to be performed. The controller 312 is coupled to various power supplies, heating systems, pumps, robots, and gas flow controllers or valves of the reactor, as will be understood by those skilled in the art. For example, the controller 312 may be configured to control the gas flow of precursors, reactants, and inert gases into at least one of the one or more reaction chambers to form a layer on the substrate surface. The controller 312 may be further configured to provide power to form a plasma, for example, within the reaction chamber 302. The controller 312 may be similarly configured to perform additional or alternative steps as described herein. For example, the controller 312 may be configured to perform steps of processing deposited materials, etching, and / or curing.

[0067] The controller 312 may include electronic circuitry and software to selectively operate valves, manifolds, heaters, pumps, and other components included in the system 300. Such circuitry and components are operable to introduce precursors, reactants, and purge gases from the respective sources. The controller 312 may control the timing of the gas pulse sequence, the temperature of the substrate and / or reaction chamber, the pressure within the reaction chamber, and various other operations to provide proper operation of the system 300.

[0068] The controller 312 may include control software to control valves, either electrically or pneumatically, to control the flow of precursors, reactants, and / or purge gases into and out of the reaction chamber 302. The controller 312 may include modules that perform certain tasks, such as software or hardware components, such as an FPGA or ASIC. The modules may advantageously be configured to reside on an addressable storage medium of the control system and be configured to perform one or more processes.

[0069] In some embodiments, a dual-chamber reactor (for processing two portions or compartments of substrates disposed in close proximity to each other) may be used, where reactant gases and inert gases may be supplied through a shared pipeline, while precursor gases are supplied through non-shared pipelines.

[0070] During operation of the system 300, a substrate, such as a semiconductor wafer, is transferred from, for example, a substrate handling area 323 to the reaction zone 301. Once the substrate is transferred to the reaction zone 301, one or more gases, such as precursors, reactants, carrier gases, and / or purge gases, are introduced into the reaction chamber 302.

[0071] The illustrations presented herein are not meant to be actual views of any particular material, structure, or device, but are merely idealized representations for describing embodiments of the present disclosure.

[0072] The specific embodiments shown and described are illustrative of the invention and its best mode and are not intended to limit the scope of these aspects and embodiments in any way. Indeed, for the sake of brevity, conventional manufacturing, connection, preparation, and other functional aspects of the system may not be described in detail. In addition, the connecting lines shown in the figures are intended to represent exemplary functional relationships and / or physical couplings between various elements. Many alternative or additional functional relationships or physical connections may exist in the actual system and / or may not exist in some embodiments.

[0073] It should be understood that the configurations and / or methods described herein are exemplary in nature and that these specific embodiments or examples should not be considered limiting since many variations are possible. The specific routines or methods described herein may represent one or more of any number of processing strategies. Accordingly, the various acts shown may be performed in the order shown, in other orders, or in some cases, omitted.

[0074] The subject matter of the present disclosure includes all novel and non-obvious combinations and sub-combinations of various processes, systems, and configurations, as well as other features, functions, acts, and / or properties disclosed herein, and any and all equivalents thereof.

Claims

1. A multi-chamber reactor system comprising: a first reaction chamber configured to deposit a layer comprising silicon into at least one gap on the substrate to form a deposited layer; a second reaction chamber that exposes the deposited layer to vacuum ultraviolet radiation; as well as The controller is configured as: providing a substrate including at least one gap within a first reaction chamber; performing a deposition cycle in a first reaction chamber; moving the substrate from the first reaction chamber to the second reaction chamber; as well as The exposure process is performed in the second reaction chamber.

2. The multi-chamber reactor system according to claim 1, wherein: The controller is configured to perform a plurality of deposition cycles in the first reaction chamber before moving the substrate from the first reaction chamber to the second reaction chamber.

3. The multi-chamber reactor system according to claim 1 or 2, wherein: The controller is also configured to move the substrate from the second reaction chamber to the first reaction chamber.

4. The multi-chamber reactor system according to claim 1 or 2, further comprising a third reaction chamber for processing the conversion layer, wherein: The controller is configured to move the substrate from the first or second reaction chamber to a third reaction chamber; and perform an annealing process in the third reaction chamber.

5. A multi-chamber reactor system according to any one of the preceding claims, wherein: The deposition cycle includes: pulsing a silicon precursor from a silicon precursor source into the first reaction chamber; and Deposition plasma power is provided to form reactive species from the reactants to deposit a layer including silicon nitride.

6. The multi-chamber reactor system according to any one of claims 1 to 4, wherein: The deposition cycle includes: pulsing a silicon precursor from a silicon precursor source into the first reaction chamber; pulsing a carbon precursor from a carbon precursor source into the first reaction chamber; and Deposition plasma power is provided to form reactive species from the reactants to deposit a layer comprising silicon carbonitride.

7. The multi-chamber reactor system according to any one of claims 1 to 4, wherein: The deposition cycle includes: pulsing a silicon precursor from a silicon precursor source into the first reaction chamber; and Deposition plasma power is provided to form active species from the reactants to deposit a layer including silicon oxide.

8. The multi-chamber reactor system according to claim 4, wherein: Exposure to vacuum ultraviolet radiation converts the layer comprising silicon nitride into a conversion layer comprising silicon oxide.

9. The multi-chamber reactor system according to claim 6, wherein: Exposure to vacuum ultraviolet radiation converts the layer comprising silicon carbon nitride to a conversion layer comprising silicon oxycarbon nitride.

10. The multi-chamber reactor system according to any one of claims 8 to 9, wherein: The conversion process involves oxidation of the deposited layer using vacuum ultraviolet induced ozone and reactive oxygen species.

11. The multi-chamber reactor system according to claim 10, wherein: The UV light is provided by an excimer lamp.

12. The multi-chamber reactor system according to claim 10, wherein: The UV light source is a low-pressure mercury lamp.

13. The multi-chamber reactor system according to claim 10, wherein: The wavelength of the vacuum ultraviolet radiation is 100-450nm.

14. The multi-chamber reactor system according to claim 10, wherein: The wavelength of the vacuum ultraviolet is 172 nm.

15. The multi-chamber reactor system according to claim 1 or 2, further comprising a fourth reaction chamber, wherein: The controller is further configured to deposit an additional layer comprising silicon on the surface of the conversion layer or on the surface of the treated conversion layer, and The controller is further configured to move the substrate from the first reaction chamber to the second reaction chamber, from the second reaction chamber to the third reaction chamber, and from the third reaction chamber to a fourth reaction chamber.

16. A multi-chamber reactor system according to any one of the preceding claims, wherein: The controller is further configured to increase the flow rate of the oxygen-containing reactant after the substrate is positioned within the second reaction chamber.

17. The multi-chamber reactor system according to claim 16, wherein: The controller is also configured to reduce the flow rate of the oxygen-containing reactant prior to removing the substrate from the second reaction chamber.

18. A multi-chamber reactor system according to any one of the preceding claims, wherein: The vacuum ultraviolet radiation cures any seams formed in the deposited layers.

19. A method for depositing a layer comprising silicon and oxygen, the method comprising: Providing a substrate within a first reaction chamber, wherein the substrate includes at least one gap; depositing a layer comprising silicon into at least one gap on the substrate in a first reaction chamber to form a deposited layer; The deposited layer is exposed to vacuum ultraviolet radiation in a second reaction chamber to form an exposed layer comprising silicon and oxygen.

20. The method according to claim 19, wherein: The first reaction chamber and the second reaction chamber form part of a module.

21. The method of claim 19 or 20, further comprising treating the exposed layer in a third reaction chamber to form a treated layer, wherein the third reaction chamber is part of the module.

22. The method according to any one of claims 19 to 21, wherein: The deposited layer includes silicon nitride.

23. The method according to claim 22, wherein: The deposited layer also includes carbon.

24. The method according to claim 22, wherein: The exposed layer also includes carbon.

25. The method according to claim 19 or 20, wherein: The deposited layer includes silicon oxide.

26. The method of claim 19, wherein: The exposing step includes oxidizing the deposited layer with vacuum ultraviolet induced ozone and reactive oxygen species.

27. The method of claim 19, wherein: The wavelength of the vacuum ultraviolet radiation is 100-450nm.

28. The method of claim 19, wherein: The wavelength of the vacuum ultraviolet is 150-200nm.

29. The method of claim 22, wherein: The layer comprising silicon and nitrogen is deposited by a deposition cycle comprising: pulsing a silicon precursor from a silicon precursor source into the first reaction chamber; and Deposition plasma power is provided to form active species from the reactants.

30. The method of claim 23, wherein: The layer comprising silicon, nitrogen and carbon is deposited by a deposition cycle comprising: pulsing a silicon precursor from a silicon precursor source into the first reaction chamber; pulsing a carbon precursor from a carbon precursor source into the first reaction chamber; and Deposition plasma power is provided to form active species from the reactants.

31. The method of claim 25, wherein: The silicon oxide layer is deposited by a deposition cycle, the deposition cycle comprising: pulsing a silicon precursor from a silicon precursor source into the first reaction chamber; and Deposition plasma power is provided to form active species from the reactants.

32. The method of claim 20, wherein: The processing step includes annealing.

33. The method of claim 32, wherein: The annealing is thermal annealing.

34. The method of claim 33, wherein: The thermal annealing includes heating the substrate to a temperature between 400 and 600°C.

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