Electronic device and method for manufacturing electronic device

Abstract

The invention discloses an electronic device and a manufacturing method of the electronic device. The manufacturing method of the electronic device comprises the following steps: providing a core substrate; a step of modifying a portion of the core substrate; performing an etching step on the portion of the core substrate to form a through hole; and performing a perforation detection step to judge whether the core substrate containing the perforation needs to be reworked or not.

Description

Technical Field

[0001] The present invention relates to an electronic device and a method for manufacturing the electronic device, and in particular to a method for manufacturing an electronic device using a non-destructive testing step and the manufactured electronic device. Background Art

[0002] Using perforated substrates as circuit boards is very beneficial for electrical signal transmission because perforated substrates have dimensional stability, adjustable thermal expansion coefficients, low electrical loss at high frequencies, high thermal stability, and the ability to be formed in thickness and large panel sizes. However, as the size of current electronic components continues to shrink and become thinner, the key dimensions of the perforated substrate TV process (such as perforation openings and perforation angles) continue to shrink, which directly affects the difficulty of subsequent perforation defect detection and perforation metallization processes. In addition, quality inspection of perforated substrates is also an issue that needs to be discussed urgently. Summary of the invention

[0003] Therefore, the main object of the present invention is to provide an electronic device and a method for manufacturing the electronic device.

[0004] The present invention provides a method for manufacturing an electronic device, which includes providing a core substrate; performing a modification step on a portion of the core substrate; performing an etching step on the portion of the core substrate to form a through hole; and performing a through hole detection step to determine whether the core substrate including the through hole needs to be reworked.

[0005] The present invention provides an electronic device, which includes a core substrate having a first surface and a second surface opposite to each other; a first through hole arranged in the core substrate and connecting the first surface and the second surface; a second through hole arranged in the core substrate and connecting the first surface and the second surface; and a conductive material filled in the first through hole and the second through hole; wherein in the cross-sectional structure of the electronic device, the cross-sectional shape of the first through hole is different from the cross-sectional shape of the second through hole. BRIEF DESCRIPTION OF THE DRAWINGS

[0006] Figure 1 It is a cross-sectional schematic diagram of the electronic device of the present invention.

[0007] Figure 2 FIG. 4 is a schematic diagram of a manufacturing system for an electronic device according to the present invention.

[0008] Figure 3 It is a schematic diagram of the method for manufacturing an electronic device of the present invention.

[0009] Figure 4 FIG. 1 is a schematic diagram of a first embodiment of a detection device according to the present invention.

[0010] Figure 5 It is a schematic diagram of the second embodiment of the detection device of the present invention.

[0011] Figure 6 It is a schematic diagram of the detection results of the present invention.

[0012] Figure 7 It is a schematic diagram of the detection results of the prior art.

[0013] Figures 8 to 10 Schematic diagram of the core substrate of the present invention before and after perforation rework.

[0014] Figure 11 to Figure 14 Schematic diagram of electronic devices according to different embodiments of the present invention.

[0015] Explanation of reference numerals: 1, 11, 12, 13, 14-electronic device; 2-manufacturing system; PAD-contact pad; ED-electronic element; MT-metal layer; L1, L2, L3, L4-light; TV1, TV, TV3, 111-114-perforation; SUB-core substrate; 101, 102-surface; 20-manufacturing device; 22, 24-detection device; 3-manufacturing method; 201, 205-detection light generator; 202-detection light receiver Device; 203, 204, 206-optical film assembly; 207-carrying platform; θ-incident angle; S300~S312, S402, S404-steps; 502-insulating layer; 504-bottom filling layer; 506-packaging layer; CM-conductive material; WT1-waist; WD1-width; TC-perforated conductive element; CL1, CL2-circuit layer; BL-buffer layer; HS-heat dissipation structure; 100-substrate; PD-support element; 200-intermediary layer. DETAILED DESCRIPTION

[0016] The present invention is described in detail below in conjunction with specific embodiments and drawings. It should be noted that, in order to make it easier for readers to understand and to keep the drawings concise, the multiple drawings in the present invention only depict a portion of the device, and specific elements in the drawings are not drawn according to actual proportions. In addition, the number and size of each element in the drawings are only for illustration and are not intended to limit the scope of the present invention.

[0017] Certain words are used throughout the specification and claims of the present invention to refer to specific components. It should be understood by those skilled in the art that electronic equipment manufacturers may refer to the same components by different names. The present invention is not intended to distinguish between components that have the same function but different names. In the specification and claims of the present invention, the words "containing" and "including" are open-ended words, and therefore should be interpreted as "containing but not limited to..." When the terms "comprise", "include", "contain" and / or "have" are used in the specification of the present invention, they specify the presence of the features, regions, steps, operations and / or elements, but do not exclude the presence or addition of one or more other features, regions, steps, operations, elements and / or combinations thereof.

[0018] When an element or film layer is referred to as being "on" or "connected to" another element or film layer, it may be directly on or directly connected to the other element or film layer, or there may be intervening elements or film layers between the two. Conversely, when an element is referred to as being "directly on" or "directly connected to" another element or film layer, there may be no intervening elements or film layers between the two.

[0019] Directional terms mentioned in the present invention, such as "upper", "lower", "front", "back", "left", "right", etc., are only used to refer to the directions of the accompanying drawings. Therefore, the directional terms used are used for explanation, not for limiting the present invention.

[0020] The terms "approximately," "equal," "equal," or "same," "substantially," or "approximately" are generally interpreted as within 20% of a given value or range, or within 10%, 5%, 3%, 2%, 1% or 0.5% of a given value or range.

[0021] The term “between value A and value B” is to be interpreted as including value A and value B or a situation containing at least one of value A and value B, and including other values ​​between value A and value B.

[0022] In the present invention, the depth, thickness, length, width and aperture may be measured by an optical microscope (OM), an electron microscope (such as a scanning electron microscope (SEM)), or other methods, but is not limited thereto.

[0023] In the present invention, the definition of roughness judgment can be observed by SEM. On the concave-convex surface, it can be seen that the peaks and valleys of the surface undulations have a distance difference of 0.15 micrometers (μm) to 1 μm. The measurement of roughness judgment can include using SEM, transmission electron microscope (TEM), etc., to observe the surface undulations at the same appropriate magnification, and by taking a sample of unit length (for example, 10 μm) to compare the undulations, which is its roughness range. Here, "appropriate magnification" means that at least one surface can see at least 10 undulating peaks in the field of view of this magnification. Roughness (Rz) or average roughness (Ra).

[0024] The ordinal numbers used in the specification and claims of the present invention, such as "first", "second", etc., are used to modify the elements. They do not imply or represent any previous ordinal numbers of the element (or elements), nor do they represent the order of one element and another element, or the order of the manufacturing method. The use of these ordinal numbers is only used to make the element with a certain name clearly distinguishable from another element with the same name. The same words may not be used in the claims and the specification. Accordingly, the first component in the specification may be the second component in the claims.

[0025] The electronic device described in the present invention can be applied to semiconductor packaging devices, display devices, light-emitting devices, backlight devices, antenna devices, sensing devices or splicing devices, but not limited thereto. The electronic device can be a bendable or flexible electronic device. The display device can be a non-self-luminous display device or a self-luminous display device. The antenna device can be a liquid crystal antenna device or a non-liquid crystal antenna device, and the sensing device can be a sensing device for sensing capacitance, light, heat or ultrasound, but not limited thereto. The electronic device can include electronic components, and the electronic components can include semiconductor components, and the semiconductor components can include passive components and active components, such as capacitors, resistors, inductors, diodes, transistors, integrated circuits, etc. The diode can include a light-emitting diode, a photodiode or a varactor diode. The light-emitting diode can include, for example, an organic light emitting diode (OLED), a sub-millimeter light-emitting diode (mini LED), a micro light-emitting diode (micro LED) or a quantum dot light-emitting diode (quantum dot LED), but not limited thereto. The splicing device can be, for example, a display splicing device or an antenna splicing device, but not limited thereto. Semiconductor elements may include semiconductor layers or electronic elements made by semiconductor processes, but are not limited thereto. It should be noted that the electronic device may be any combination of the foregoing, but is not limited thereto. The electronic device may have peripheral systems such as a drive system, a control system, a light source system, a shelf system, etc. The electronic device may include an electronic unit, wherein the electronic unit may include passive components and active components, such as capacitors, resistors, inductors, diodes, transistors, sensors, etc. It should be noted that the electronic device of the present invention may be various combinations of the above devices, but is not limited thereto. The method for making the electronic device in the present invention may, for example, be applied to a wafer-level package (WLP) process or a panel-level package (PLP) process, wherein the wafer-level package or panel-level package process may include a chip-first process or a chip-last process, but is not limited thereto. The electronic device of the present invention may, for example, be applied to a power module, a semiconductor packaging device, a display device, a light-emitting device, a backlight device, an antenna device, a sensing device, or a splicing device, but is not limited thereto. The electronic device may include a system on a chip (SoC), a system in a package (SiP), an antenna in package (AiP), or various combinations thereof, but is not limited thereto.

[0026] It should be understood that the features of several different embodiments may be replaced, reorganized, or mixed to complete other embodiments without departing from the spirit of the present invention.

[0027] It should be noted that the technical solutions provided in different embodiments of the present invention may be replaced, combined or mixed with each other to form another embodiment without violating the spirit of the present invention.

[0028] Please refer to Figure 1 , Figure 1 FIG. 1 is a cross-sectional schematic diagram of the electronic device 1 of the present invention. Figure 1 As shown, the present invention provides an electronic device 1, which includes a core substrate SUB, a plurality of through-holes and a conductive material CM. The core substrate SUB may be glass, ceramic, wafer, organic material, a combination of the above or other suitable materials, and the glass may include molten silica, alkali-containing glass or alkali-free glass, but is not limited thereto. In the present embodiment, a plurality of through-holes are arranged in the core substrate SUB and connect a first surface 101 and a second surface 102 of the core substrate SUB. The conductive material CM may be filled in the plurality of through-holes, and other electronic components or wires may directly contact or contact the conductive material CM of the electronic device 1 through indirect conductive materials to transmit electrical signals. It should be noted that other electronic components or wires and indirect conductive materials are common techniques of those with ordinary knowledge in the field, and are not described here and are not shown. Figure 1 In one embodiment, the plurality of perforations may include at least two of a first perforation TV1, a second perforation TV2 and a third perforation TV3. Figure 1 Although a first through hole TV1, a second through hole TV2 and a third through hole TV3 are shown, the present invention is not limited to the above, and the electronic device 1 may include two or more through holes, and the types of the through holes may be more than two. In detail, according to the present invention, at least two through holes in the plurality of through holes have different cross-sectional shapes, for example, at least one of the opening width, waist width, side wall inclination angle and side wall curvature radius of the cross-sectional shapes of at least two through holes is different, or, in the top view direction, the degree to which the through holes are close to a circle is different (true roundness, refer to Figure 6 and Figure 7 ), but not limited to this. Figure 1As shown, taking the cross-sectional shape of the first perforation TV1 as an example, which is different from the cross-sectional shape of the second perforation TV2, the first perforation TV1 includes a tapered area adjacent to the first surface 101 and a tapered area adjacent to the second surface 102, and the sidewalls at the intersection of the two tapered areas have an obvious inclined turning point, which is the waist WT1 of the first perforation TV1, and the width WD1 of the waist WT1 is the only minimum width in the cross-sectional shape of the first perforation TV1. In contrast, the waist WT2 of the second perforation TV2 is a rectangular area, and its side walls on both sides are parallel to the direction Z and have a section of equal width, wherein the direction Z is parallel to the normal direction of the first surface 101. As can be seen from the above, the waist width WD1 (or the minimum width of the cross-sectional shape) and shape of the first perforation TV1 are different from the waist width WD2 (or the minimum width of the cross-sectional shape) and shape of the second perforation TV2, for example, the width WD2 can be greater than the width WD1, but it is not limited to this. On the other hand, the waist WT3 of the third perforation TV3 has an arc-shaped sidewall, so its cross-sectional shape is different from the first perforation TV1 and the second perforation TV2. It should be noted that in other embodiments, the plurality of perforations may include perforations with different sidewall inclination angles, perforations with arc-shaped sidewalls and non-arc-shaped sidewalls, or perforations with arc-shaped sidewalls with different curvature radii R, but are not limited thereto. In different embodiments, the electronic device 1 of the present invention may include a plurality of perforations, wherein at least two perforations have different cross-sectional shapes, but some of the plurality of perforations of the electronic device 1 may have the same cross-sectional shape. In the electronic device 1, a conductive material CM is disposed in the perforation of the core substrate SUB, so the perforation and the conductive material CM therein form a perforated conductive element TC, which can be used to conduct or electrically connect electronic components or wires disposed on the first surface 101 and the second surface 102. According to some embodiments, the inclination angle of the sidewall is the angle between the extension line of the sidewall and the normal direction of the substrate, for example, Figure 1 The inclination angle θ 1 and θ 2 The electronic device 1 can be applied to any electronic component or product that requires a core substrate SUB and a through-hole conductive element TC, such as a packaging component, a circuit board, a display panel, a light-emitting device, etc., but is not limited to the above.

[0029] Please refer to Figure 2 , Figure 2 FIG. 2 is a schematic diagram of a manufacturing system 2 for an electronic device according to the present invention. Figure 2As shown, the manufacturing system 2 includes a manufacturing device 20 and a detection device 22. The detection device 22 is used to detect whether the electronic device 1 manufactured by the manufacturing device 20 includes abnormal or defective perforations, or the effect of the modification process before making the perforations. The manufacturing device 20 can rework the electronic device 1 according to the detection results. It should be noted that the manufacturing device 20 and the detection device 22 can be independent devices or integrated into one device, or the manufacturing device 20 and the detection device 22 can integrate a controller or other computing device (for example, an edge computing device) to judge the detection results. It is not limited to this. In detail, the operation of the manufacturing system 2 can be summarized as an electronic device manufacturing method 3, such as Figure 3 The electronic device manufacturing method 3 comprises the following steps:

[0030] Step S300: Start.

[0031] Step S302: providing a core substrate.

[0032] Step S304: performing a modification step on a portion of the core substrate.

[0033] Step S306: performing an etching step on the portion of the core substrate to form a through hole.

[0034] Step S308: Perform a perforation detection step to determine whether the core substrate containing the perforation needs to be reworked; when the core substrate needs to be reworked, execute step S310; when the core substrate does not need to be reworked, execute step S312.

[0035] Step S310: performing a perforation rework step.

[0036] Step S312: perform subsequent processes.

[0037] According to the manufacturing method 3 of the electronic device, the modified state of the core substrate may be optionally confirmed before step S306, including the following steps:

[0038] Step S402: Perform a modification detection step to determine whether the modification state of the part of the core substrate is normal or abnormal. When the modification state is normal, proceed to step S306; when the modification state is abnormal, confirm whether it can be modified again or cannot be remedied. If it can be modified again to improve the modification state, proceed to step S304; if it is confirmed that it cannot be remedied, proceed to step S404.

[0039] Step S404: scrapping the core substrate.

[0040] According to step S304 of the electronic device manufacturing method 3, the manufacturing device 20 can perform a modification step on a portion of the core substrate. In detail, a laser can be used to irradiate partial areas of the core substrate so that the crystallinity of these areas changes and is modified. For example, the bonding ability of the area of ​​the substrate or core substrate that has been laser-modified is different from that of the area that has not been laser-modified, that is, the structure of the area that has been laser-modified is weakened, or the refractive index of the area that has been laser-modified to light is different from that of the area that has not been laser-modified to light, but not limited to this. According to the detection results, it is determined whether the degree of laser modification meets the settings. If it does not meet the settings, the modification step is performed again.

[0041] In step S402, the detection device 22 may perform a modification detection step on the electronic device to determine whether the modification state of the modified portion of the core substrate is normal or abnormal. Figure 4 , Figure 4It is a schematic diagram of an embodiment of the detection device 22 of the present invention. The detection device 22 includes a first detection light generator 201, a detection light receiver 202 and a first optical film assembly 203, and can optionally include a carrier 207. The first detection light generator 201 can provide a first light L1, and make the first light L1 pass through the first optical film assembly 203, and then pass through a detection area including the modified part of the core substrate SUB. It should be noted that the first optical film assembly 203 can be arranged in the projection area of ​​the detection area corresponding to the adjacent first surface 101, but is not limited to this. The first optical film assembly 203 may include a polarizer, in other words, the first optical film assembly 203 can be regarded as including a polarizer. When the first light L1 passes through the first optical film assembly 203, it will generate a collimated light. After the collimated light passes through the core substrate SUB, the detection light receiver 202 can receive the collimated light and generate a detection result. The detection light receiver 202 may include a second optical film assembly 204, which may be disposed adjacent to the detection light receiver 202 or adjacent to the second surface 102, but is not limited thereto. The second optical film assembly 204 may include another polarizer, whose polarization direction is different from the polarization direction of the polarizer of the first optical film assembly 203, for example, they are orthogonal to each other. Under the above design, the second optical film assembly 204 may be regarded as including a polarizer, which can be used to detect the polarization state of the received light. During the detection process, when the first light L1 containing collimated light passes through the detection area, the modified and unmodified areas of the core substrate have different refractive properties, for example, the modified area will cause the first light L1 to have a larger refraction angle. When the first light L1 enters the detection light receiver 202, it will first pass through the first optical film assembly 203 to form a second light L2, and then the detection result can be obtained through the photographic system in the detection light receiver 202, wherein the modified part will form a bright spot or a white spot, and the unmodified area will be a dark area. In this embodiment, the carrier 207 can be a platform that has been anodized with black, but this is not limited to the above. The carrier 207 can also have other colors or be unanodized. Through the above design, the image judgment can be made more obvious and the defect detection rate can be improved, but this is not limited to this.

[0042] On the other hand, the electronic device detection device of the present invention can detect the electronic device using not only the backlight source (relative to the first surface 101) such as the first detection light generator 201, but also the frontlight source (relative to the second surface 102) to detect the electronic device, and execute step 308 to perform the perforation detection step. Please refer to Figure 5 , Figure 5It is a schematic diagram of the detection device 24 of the present invention. The detection device 24 can be derived from the detection device 22, so the same elements are represented by the same symbols. The difference between the detection device 24 and the detection device 22 is that the detection device 24 also includes a second detection light generator 205 and a third optical film (layer) component 206. The second detection light generator 205 is arranged on the second surface 102 side of the core substrate SUB as a front light source, which can provide a third light L3, so that the third light L3 passes through the detection area including the part of the core substrate SUB, and travels to the third optical film component 206 to form a fourth light L4. The detection light receiver 202 can receive the fourth light L4 to detect the perforation state of the core substrate SUB and generate a detection result to indicate whether the core substrate including the perforation needs to be reworked. It should be noted that the third optical film component 206 can be or include a reflective film, and the reflective film can include a metal material or a material with high reflectivity, for example, but is not limited to this. In addition, the second detection light generator 205 can be moved or rotated in different directions (including XY, YZ, XZ or XYZ) to control the incident angle θ of the third light L3 to be 10 degrees to 170 degrees, but not limited thereto. According to some embodiments, the third light L3 may be a ring-shaped front light source or a backlight source, but not limited thereto. The detection light receiver 202 may also be arranged at a relative position or angle to facilitate receiving the fourth light L4, so as to obtain a better detection result. In this way, when the perforation of the core substrate SUB is abnormal or defective, the manufacturing device 20 can re-perform a rework step (for example, including a modification step, an etching process and / or a laser process) on the perforation of the core substrate SUB until the perforation of the core substrate SUB is normal or has no defects. It should be noted that the third optical film assembly 206 can be a film layer directly coated or formed on the surface of the carrier 207, or a film layer element that can be separated from the carrier 207.

[0043] In another embodiment, when performing the perforation detection step of step S308, a backlight source may also be used for detection, for example, a first detection light generator 201 is used to generate a first light L1, which includes collimated light after passing through the first optical film component 203, and then travels to the core substrate SUB to pass through the area to be tested, and uses the different refraction and scattering characteristics of the perforated and non-perforated areas, and the third optical film component 206 is used to reflect the light to form a fourth light L4, which is then processed by the detection light receiver 202, and the perforation status of the core substrate SUB can be determined as acceptable, reworked, or scrapped, but is not limited thereto. For example, if the core substrate SUB after the perforation step is judged to need rework, a perforation rework process is performed, and if the judgment result is that rework is not required, a subsequent process is performed.

[0044] It should be noted that the detection device 22 and the detection device 24 are only embodiments of the present invention, and those with ordinary knowledge in the field can make appropriate adjustments according to the needs of the system. For example, the detection light receiver 202 can be a photographic element, such as a two-dimensional optical microscope (2D optical microscope, 2D-OM), but is not limited to this. The second detection light generator 205 can be a ring-shaped front light source, and the third light L3 generated by it is incident on a portion of the core substrate SUB in a ring-shaped distribution. In addition, the first light L1 and the third light L3 may include visible light (full-color light) with a wavelength greater than 400 nanometers and invisible light (near infrared light or short-wave infrared light) with a wavelength of 700 nanometers to 1700 nanometers, but are not limited to this. The laser process includes using a laser with a wavelength of 1064 nanometers, 532 nanometers or 266 nanometers to perform the reworking step, but is not limited to this.

[0045] Please refer to Figure 6 and Figure 7 , Figure 6 is a schematic diagram of the detection results of the present invention, Figure 7 It is a schematic diagram of the test results of the prior art. Figure 6 As shown, due to the setting of the third optical film assembly 206, the detection result of the detection device of the present invention detecting the electronic device has high contrast and high resolution, and the maximum size and minimum size of the perforation (i.e., the part with waist width) can be clearly seen. Figure 7 , Figure 6 The waist width of the through hole of the core substrate SUB is clearly visible. A person skilled in the art can judge whether the through hole of the core substrate SUB needs to be reworked according to the waist width of the through hole.

[0046] Please refer to Figures 8 to 10 , Figures 8 to 10 Schematic diagram of the core substrate SUB before and after the reworking of the perforation of the present invention. The manufacturing device 20 can perform a reworking step on the defective perforation (the perforation does not connect the first surface and the second surface of the core substrate SUB or does not penetrate the core substrate SUB). For example, Figure 8 As shown, the reworking step may adopt an etching process, and the etching process includes dry etching or wet etching. Taking wet etching as an example, when the modified area is etched again with an etching solution, a through hole penetrating the first surface and the second surface of the substrate SUB may be formed after the etching process is completed. For example, the waist sidewall of the through hole may present a curved surface feature, a straight line feature, or a gradual change from one side of the core substrate, but it is not limited thereto. In addition, as Fig. 9 and Fig.10 As shown, the reworking step can be performed by laser processing, and the waist of the perforation after the laser process is completed will present rectangular features or conical features. Therefore, the electronic device manufactured and / or reworked by the manufacturing device and the detection device of the present invention can have a plurality of perforations with different cross-sectional shapes.

[0047] Please refer to Figure 11 to Figure 14 , Figure 11 to Figure 14 Schematic diagram of electronic devices according to different embodiments of the present invention. Fig.11 As shown, the electronic device 11 includes a core substrate SUB and a plurality of through-holes (111, 112, 113, 114) formed in the core substrate SUB. These through-holes can have at least two cross-sectional shapes, each having different characteristics. For example, the opening width of the through-hole 114 and the other through-holes is different, the waist width of the through-hole 112 and the other through-holes is different and the side wall angle is different, or the side wall curvature radius of the through-hole 111 and the other through-holes is different, but not limited to this. That is, in the electronic device 11, through-holes with four different cross-sectional shape characteristics are included. Each through-hole and the conductive material CM disposed therein can form a through-hole conductive element TC respectively. In some embodiments, when making the through-hole conductive element TC, a buffer layer BL can be first formed in the through-hole, and then the conductive material CM can be formed in the through-hole. On the other hand, the first surface 101 and the second surface 102 of the electronic device 11 can selectively set the circuit layer CL1 and the circuit layer CL2 respectively, and the surfaces of the circuit layer CL1 and the circuit layer CL2 can be provided with contact pads PAD, and they are electrically connected to each other through the conductive layer MT. The circuit layer CL1 and the circuit layer CL2 can be redistribution (RDL) layers, which include one or more insulating layers 502, and the conductive layer MT can be set on the surface of the insulating layer 502 and in the through-holes in the insulating layer 502. The electronic device 11 may also include one or more electronic components ED, such as (but not limited to) integrated circuit chips, capacitor chips, etc., and its connection pads can transmit electrical signals through the path formed by the contact pads PAD, the metal layer MT and the perforated conductive elements TC. In addition, the electronic device 11 may also include a bottom filling layer 504 disposed on the lower side of the electronic component ED and surrounding the contact pads PAD on the lower side. The electronic device 11 may also include a packaging layer 506 that covers and encapsulates the electronic component ED and the bottom filling layer 504. As described above, Fig.11 The electronic device 11 shown may form an electronic device package.

[0048] The structures and manufacturing methods of other layers of the electronic devices 11 to 14 are well known in the art, and those skilled in the art can combine, modify or change the above-mentioned embodiments according to the spirit of the present invention, but are not limited thereto. Fig.12As shown, the electronic device 12 may further include a heat dissipation structure HS, which is disposed on the electronic component ED. This is beneficial to improving the heat dissipation effect of the electronic device 12. The electronic device 12 may also selectively include a thermally conductive material, which may be disposed between the heat dissipation structure HS and the electronic component ED, thereby further improving the heat dissipation effect of the electronic device 12. In addition, the thermally conductive material may selectively fill the gap between the heat dissipation structure HS and the electronic component ED, thereby facilitating the heat energy generated by the electronic component ED to be conducted to the heat dissipation structure HS through the thermally conductive material, and then to the outside of the electronic device 12 by the heat dissipation structure HS. The material of the heat dissipation structure HS may include metal, silicon, silicon carbide, graphite, graphene, other suitable materials, or a combination of the above materials, but is not limited thereto. The thermally conductive material may include metal, graphite, graphene, other suitable materials, or a combination of the above materials, but is not limited thereto.

[0049] In some embodiments, Fig.13As shown, the electronic device 13 can be disposed on a substrate 100. The substrate 100 can be, for example, a printed circuit board (PCB), a package substrate, or a substrate like PCB (SLP), but is not limited thereto. As long as a substrate that can provide an electrical connection function, such as a substrate that includes an insulating layer and a conductor structure disposed therein to provide an electrical connection function, can be used as the substrate 100 of the present invention. In one embodiment of the present invention, the substrate 100 includes a base, a redistribution layer structure formed on the upper surface and the lower surface of the base, and a through hole penetrating the base, and the base can include glass or silicon. The electronic element ED and / or the core substrate SUB can be electrically connected to the substrate 100 through the contact pad PAD. On the other hand, the substrate 100 can also be regarded as a part of the electronic device 13 of the present invention, that is, the electronic device 13 also includes the substrate 100 such as (but not limited to) a printed circuit board. In addition, the electronic device 13 can also include a package PK and at least one supporting element PD. The package PK is disposed on the electronic component ED, which may include another electronic component ED', such as (but not limited to) a light-emitting element or other suitable electronic components. The support element PD is disposed between the core substrate SUB and the package PK, and the upper and lower ends of the support element PD respectively abut the redistribution layer (or circuit layer) on the lower side of the package PK and the redistribution layer (or circuit layer) on the upper surface of the core substrate SUB, thereby facilitating the maintenance of the spacing distance between the package PK and the core substrate SUB, and preventing the components disposed between the package PK and the core substrate SUB, such as the electronic component ED, from being crushed. In the present embodiment, the number of support elements PD is illustrated as a plurality, and the support elements PD are spaced apart from each other, for example, a plurality of support elements PD may be spaced apart from each other at equal intervals, but is not limited thereto. In addition, one or some support elements PD may be disposed in the peripheral area of ​​the electronic device 13, such as the outer side of the electronic component ED, and one or some support elements PD (not shown) may be disposed in the peripheral area of ​​the electronic device 13, such as the outer side of the electronic component ED. Fig.13 ) can be arranged in the central area of ​​the electronic device 13, such as the inner side of the electronic component ED or between two electronic components ED, so that the supporting effect provided by the supporting element PD can be further enhanced. The supporting element PD may include a columnar structure or a non-closed ring structure, but is not limited thereto. The material of the supporting element PD may include metal, silicon, silicon carbide, quartz, glass, other suitable materials or a combination of the above materials, but is not limited thereto. In some embodiments, the electronic component ED' in the package PK can be electrically connected to the core substrate SUB through the supporting element PD, and can be further electrically connected to the substrate 100 through the core substrate SUB.

[0050] In some embodiments, Fig.14As shown, the electronic device 14 may also include an interposer 200 (or another core substrate). The interposer 200 may be disposed on the lower side of the core substrate SUB or between the core substrate SUB and the substrate 100 (not shown in the figure). The electronic component ED may be electrically connected to the substrate 100 through the through-holes in the core substrate SUB and the interposer 200, which is beneficial to improving the maximum utilization rate of the planar space, making the configuration of the electronic components ED in the electronic device 14 more dense, and meeting the current trend of miniaturization of electronic products. In some embodiments, when the interposer 200 is another core substrate, the cross-sectional shapes of the plurality of through-holes 211 therein may all have similar shapes, or the plurality of through-holes 211 may also be similar to the through-holes in the core substrate SUB, having non-completely identical cross-sectional shapes or sidewall shapes.

[0051] As can be seen from the above, the manufacturing method of the electronic device of the present invention performs a modification step on a portion of the core substrate, and then determines whether the perforation of the modified core substrate needs to be reworked. Compared with the prior art, the present invention can provide a detection result with good contrast or resolution. In this way, the rework step of the electronic device can be performed more efficiently, thereby reducing costs.

[0052] The above description is only an embodiment of the present invention and is not intended to limit the present invention. For those skilled in the art, the present invention may have various modifications and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention shall be included in the protection scope of the present invention.

Claims

1. An electronic device, characterized in that: include: A core substrate having a first surface and a second surface opposite to each other; a first through hole, disposed in the core substrate and connecting the first surface and the second surface; a second through hole, disposed in the core substrate and connecting the first surface and the second surface; as well as A conductive material is filled in the first through hole and the second through hole; In the cross-sectional structure of the electronic device, a cross-sectional shape of the first through-hole is different from a cross-sectional shape of the second through-hole.

2. The electronic device according to claim 1, characterized in that: The minimum width of the cross-sectional shape of the first through-hole is different from the minimum width of the cross-sectional shape of the second through-hole.

3. The electronic device according to claim 1, characterized in that: The inclination angle of the sidewall of the first through-hole is different from the inclination angle of the sidewall of the second through-hole.

4. The electronic device according to claim 1, characterized in that: At least one of the first through hole and the second through hole includes a curved side wall.

5. The electronic device according to claim 4, characterized in that: The radius of curvature of the sidewall of the first through-hole is different from the radius of curvature of the sidewall of the second through-hole.

6. A method for manufacturing an electronic device, characterized in that: include: Providing a core substrate; Performing a first modification step on a portion of the core substrate; performing an etching step on the portion of the core substrate to form a through hole; and performing a perforation detection step to determine the state of the core substrate including the perforation; If the judgment result is that rework is required, the perforation rework process is performed, and if the judgment result is that rework is not required, the subsequent process is performed.

7. The method for manufacturing an electronic device according to claim 6, wherein: The perforation detection step comprises: Providing a first light, allowing the first light to pass through a first optical film assembly and then pass through the portion of the core substrate; and The first light is made to pass through a second optical film assembly to form a second light, and the second light is used to determine whether the modified state of the portion of the core substrate is normal or abnormal.

8. The method for manufacturing an electronic device according to claim 7, wherein: The first light comprises collimated light after passing through the first optical film assembly.

9. The method for manufacturing an electronic device according to claim 7, wherein: The perforation detection step comprises: Providing a third optical film assembly; Disposing the core substrate on the third optical film assembly; Providing a third light, allowing the third light to pass through the core substrate and travel to the third optical film assembly to form a fourth light; Determining whether the state of the perforation is normal or abnormal according to the fourth light or the second light; and When the perforation is determined to be abnormal, a reworking step is performed on the perforation; The reworking step includes a laser process or an etching process.

10. The method for manufacturing an electronic device according to claim 9, characterized in that: The third light includes visible light with a wavelength greater than 400 nanometers and invisible light with a wavelength of 700 nanometers to 1700 nanometers.

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