Design method for improving thermal uniformity of semiconductor wafer heater

Abstract

The invention discloses a design method for improving the thermal uniformity of a semiconductor wafer heater, and relates to the technical field of semiconductor application, and the method comprises the following steps: S1, collecting the physical characteristic data of a material required for manufacturing the semiconductor wafer heater; s2, collecting thermal performance and electrical performance data required by the semiconductor wafer heater; s3, collecting size data required by the semiconductor wafer heater; s4, calculating the required arrangement number of heating wires according to the data collected in the steps S1 to S3; s5, calculating the layout position of the heating wire according to the data collected in the steps S1 to S3 and the calculation result in the step S4; and S6, optimizing the layout position on the basis of the calculation of S5, wherein the data collected in the step S1 comprises but is not limited to the density rho, the specific heat capacity c and the heat conductivity coefficient k of various materials required for manufacturing the semiconductor wafer heater, and the thermal resistance coefficient rh, the surface emissivity e and other data of a material interface.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor applications, and specifically provides a design method for improving the thermal uniformity of a semiconductor wafer heater. Background Art

[0002] In the process flows of semiconductor silicon wafer manufacturing and processing, such as in process flows like etching or chemical vapor deposition, it is often necessary to make the silicon wafer meet specific temperature conditions and atmosphere conditions. A heater is arranged in the reaction chamber, which is in contact with the silicon wafer to control the temperature distribution of the silicon wafer so that it meets the corresponding process temperature requirements.

[0003] For existing design methods, since existing design methods often obtain empirical results based on a large number of experiments and then make design improvements to obtain better temperature uniformity. These methods all require a large amount of experimental costs and time costs, and at the same time, it is difficult to ensure obtaining a sufficiently good temperature distribution uniformity.

[0004] Therefore, in order to improve the thermal uniformity of a semiconductor wafer heater, it is urgent to develop a new design and manufacturing method to solve problems such as low efficiency, high cost during heater design, and low reliability and poor versatility during manufacturing. Summary of the Invention

[0005] In view of the limitations of the prior art, the present invention aims to provide a design method for improving the thermal uniformity of a semiconductor wafer heater.

[0006] This design method can improve the thermal uniformity and design efficiency of a semiconductor wafer heater through scientific calculation and optimization methods, and can also enhance the reliability and versatility of the semiconductor wafer heater.

[0007] To achieve the above object, the present invention adopts the following technical solutions:

[0008] A design method for improving the thermal uniformity of a semiconductor wafer heater, the arrangement of heating wires in multiple regions inside the heater in this method includes the following steps:

[0009] S1: Collect physical property data of materials required for manufacturing a semiconductor wafer heater;

[0010] S2: Collect thermal performance and electrical performance data required for a semiconductor wafer heater;

[0011] S3: Collect size data required for a semiconductor wafer heater;

[0012] S4: Calculate the required number of heating wire arrangements according to the data collected in S1 - S3;

[0013] S5: Calculate the layout positions of the heating wires according to the data collected in S1 - S3 and the calculation results in S4;

[0014] S6: Optimize the layout position based on the calculation in S5.

[0015] Preferably, the data collected in step S1 includes, but is not limited to, the density ρ, specific heat capacity c, and thermal conductivity k of various materials required for manufacturing the semiconductor wafer heater, as well as the thermal resistance coefficient rh and surface emissivity e at the material interface.

[0016] Preferably, the data collected in step S2 includes, but is not limited to, the heating power P, withstand voltage value U for high-voltage insulation, and heating temperature T required for the semiconductor wafer heater.

[0017] Preferably, the data collected in step S3 includes, but is not limited to, the diameter D, thickness H, etc. required for the semiconductor wafer heater.

[0018] Preferably, step S4 specifically includes the following steps:

[0019] S41: Calculate the required diameter d of the heating wire

[0020]

[0021] S42: Calculate the required surface area of the heating wire

[0022]

[0023] S42: Calculate the number of heating wires to be arranged

[0024]

[0025] Preferably, since the cost increases with the increase in the number of heating wires, usually the minimum value that meets the calculation result of S42 is selected. Preferably, step S5 specifically includes the following steps:

[0026] S51: Calculate the layout position of the outermost heating wire

[0027] The layout position D1 of the outermost circle < D - H

[0028] S52: Calculate the layout position of the innermost heating wire

[0029] D n > max(100, d×10)

[0030] S53: Calculate the layout positions of the remaining heating wires

[0031] D i =(D n - D1) / n

[0032] Preferably, step S6 specifically includes the following steps:

[0033] S61: Select point i for measuring temperature uniformity and calculate the temperature Ti of these points

[0034] Ti = f i (ρ, c, k, rh, e, P, U, T), f i It represents the partial differential equation function for solving the temperature distribution. Preferably, the partial differential equation function for solving the temperature distribution can adopt the direct calculation method, the finite element method or other feasible methods.

[0035] S62: Calculate the uniformity S of the temperatures of each point in S61

[0036]

[0037] S63: Fine-tune the value of D1 so that the fine-tuned D'1 = D1 + σ, where σ should be a relatively small value, and then repeat steps S61 and S62 to obtain S’

[0038] S64: Determine whether to adopt the fine-tuned value of D1

[0039] Specifically, if S' < S, then adopt the adjusted value D'1 of D1, otherwise do not change the value of D1.

[0040] S65: Determine whether the fine-tuning of D1 is in place

[0041] Specifically, if the adjusted value is adopted, then repeat the steps of S63 and S64, otherwise determine that D1 has been adjusted in place.

[0042] S66: Fine-tune the layout positions of all heating wires

[0043] Specifically, for all Di, repeat the steps in S63 - S65. After completion, the layout optimization of all heating wires is completed.

[0044] Compared with the prior art, the beneficial effects of the present invention are:

[0045] The calculation method of the present invention can greatly improve the design efficiency of the semiconductor wafer heater. The optimization method of the present invention can greatly improve the temperature uniformity of the semiconductor wafer heater. The present invention can also reduce the R & D cycle of the semiconductor wafer heater, reduce the experimental cost, and improve the reliability and versatility of the design.

[0046] Based on various physical engineering parameters of semiconductor wafer heaters, not only can different heater materials and power levels be selected according to different process requirements, but also they have good adaptability and versatility, being applicable to the design process of various semiconductor wafer heaters. Moreover, the optimized layout can significantly improve the thermal uniformity of semiconductor wafer heaters, thereby enhancing the thermal control ability under advanced semiconductor manufacturing processes.

[0047] The semiconductor wafer heater designed according to the present invention can also improve its reliability and versatility during manufacturing. This method is a design method for improving the thermal uniformity of semiconductor wafer heaters, capable of efficiently designing semiconductor wafer heaters with good temperature distribution and having a relatively wide range of applications. BRIEF DESCRIPTION OF THE DRAWINGS

[0048] In order to more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the following will briefly introduce the drawings required for the description of the embodiments or the prior art. Obviously, the drawings in the following description are only the embodiments of the present invention. For those of ordinary skill in the art, without creative efforts, other drawings can also be obtained based on the provided drawings.

[0049] Figure 1 Schematic diagram of the method flow provided by the present invention;

[0050] Figure 2 Schematic diagram of the dimensions of the semiconductor wafer heater collected in the embodiment provided by the present invention;

[0051] Figure 3 Schematic diagram of the selected points of the semiconductor wafer heater provided by the embodiment of the present invention;

[0052] Figure 4 Schematic diagram of the position of the heating wire of the semiconductor wafer heater provided by the embodiment of the present invention;

[0053] Figure 5 Schematic diagram of the optimized position of the heating wire of the semiconductor wafer heater provided by the embodiment of the present invention. DETAILED DESCRIPTION OF THE EMBODIMENTS

[0054] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all of them. All other embodiments obtained by those of ordinary skill in the art without creative efforts based on the embodiments of the present invention belong to the scope of protection of the present invention.

[0055] Example: S1. Collect physical property data of materials required for manufacturing a semiconductor wafer heater. In this example, taking an aluminum alloy semiconductor wafer heater with an anodized surface as an example, the following data are collected: density ρ = 2700 [kg / m^3], specific heat capacity c = 900 [J / (kg*K)], thermal conductivity k = 201 [W / (m*K)], and thermal resistance coefficient rh of the material interface = 1, surface emissivity e = 0.3, etc. In practical applications, other relevant data can also be set according to the actually collected data.

[0056] S2: Collect thermal and electrical property data required for the semiconductor wafer heater

[0057] In this example, the following data are collected: heating power P = 2000 [W] required for the semiconductor wafer heater, withstand voltage value U = 800 [V] for high-voltage insulation, and heating temperature T = 300 [℃]. In practical applications, other relevant data can also be set according to the actually collected data.

[0058] S3: Collect size data required for the semiconductor wafer heater

[0059] Such as Figure 2 , in this example, the required diameter D of the semiconductor wafer heater = 208 [mm], thickness H = 35 [mm].

[0060] S4: Calculate the required number of heating wire arrangements according to the data collected in S1 - S3

[0061] S41: Calculate the required diameter d of the heating wire

[0062]

[0063] Here, take d = 6mm

[0064] S42: Calculate the required surface area of the heating wire

[0065]

[0066] S42: Calculate the number of heating wire arrangements

[0067]

[0068] Here, take n = 2

[0069] S5: Calculate the layout position of the heating wire according to the data collected in S1 - S3 and the calculation results in S4

[0070] S51: Calculate the layout position of the outermost heating wire. The layout position of the outermost circle D1 < D - H = 173mm. In this example, such as Figure 4 , take D1 = 173mm.

[0071] S52: Calculate the layout position of the innermost heating wire, D n > max(100, d×10) = 100 mm. In this example, as Figure 4 , take D n = D2 = 100 mm.

[0072] S53: Calculate the layout positions of the remaining heating wires

[0073] D i = (D n - D1) / n

[0074] In this example, since n = 2, there are no remaining heating wires

[0075] S6: Optimize the layout position based on the calculation in S5

[0076] S61: Select the point i for measuring temperature uniformity and calculate the temperatures Ti of these points

[0077] Ti = f i (ρ, c, k, rh, e, P, U, T), f i represents the partial differential equation function for solving the temperature distribution. In this example, select the points i (i = 1, 2,..., 9) as in Figure 3 , and directly calculate and solve the partial differential equation through solving to obtain

[0078] Ti (i = 1, 2,..., 9) = (296, 301, 301, 301, 301, 300, 300, 300, 300) °C

[0079] S62: Calculate the uniformity S of the temperatures of each point in S61

[0080]

[0081] S63: Fine-tune the value of D1 so that the fine-tuned D'1 = D1 ± 1, then repeat steps S61 and S62 to obtain S’ = 1.21

[0082] S64: Determine whether to adopt the fine-tuned value of D1

[0083] In this example, since S‘ < S, the adjusted value D'1 = 172 mm of D1 is adopted.

[0084] S65: Determine whether the fine-tuning of D1 is in place

[0085] In this example, since the fine-tuned value of D1 is adopted, it is determined that the fine-tuning is not in place. Therefore, repeat the steps of S63 and S64 to obtain S'' = 1.35 > S’. At this time, it is determined that the adjustment for D1 is in place

[0086] S66: Fine-tune the layout positions of all the remaining heating wires

[0087] In this example, fine-tune D2 and repeat the steps in S63 - S65. After completion, D2' = 71 mm is obtained, as Figure 5 , thus completing the layout optimization of all the heating wires.

Claims

1. A design method for improving the thermal uniformity of a semiconductor wafer heater, characterized in that, It includes the following steps: S1: Collect the physical property data of the materials required for manufacturing a semiconductor wafer heater; S2: Collect the thermal performance and electrical performance data required for the semiconductor wafer heater; S3: Collect the dimensional data required for the semiconductor wafer heater; S4: Calculate the required number of heating wire arrangements based on the data collected in S1 - S3; S5: Calculate the layout positions of the heating wires based on the data collected in S1 - S3 and the calculation results in S4; S6: Optimize the layout positions based on the calculation in S5.

2. The design method for improving the thermal uniformity of a semiconductor wafer heater according to claim 1, characterized in that The data collected in step S1 includes, but is not limited to, the density ρ, specific heat capacity c, and thermal conductivity k of various materials required for manufacturing the semiconductor wafer heater, as well as the thermal resistance coefficient rh and surface emissivity e data at the material interface.

3. The design method for improving the thermal uniformity of a semiconductor wafer heater according to claim 1, characterized in that, The data collected in step S2 includes, but is not limited to, the heating power P, withstand voltage value U for high - voltage insulation, and heating temperature T required for the semiconductor wafer heater.

4. The design method for improving the thermal uniformity of a semiconductor wafer heater according to claim 1, characterized in that, The data collected in step S3 includes, but is not limited to, the diameter D and thickness H required for the semiconductor wafer heater.

5. The design method for improving the thermal uniformity of a semiconductor wafer heater according to any one of claims 1-4, characterized in that, Step S4 specifically includes the following steps: S41: Calculate the required diameter d of the heating wire, S42: Calculate the required surface area of the heating wire S42: Calculate the number of heating wire arrangements n > 1 and n is an integer.

6. The design method for improving the thermal uniformity of a semiconductor wafer heater according to any one of claims 1-4, characterized in that Step S5 specifically includes the following steps: S51: Calculate the layout position of the outermost heating wire The layout position D1 of the outermost circle satisfies D1 < D - H S52: Calculate the layout position of the innermost heating wire D n > max(100, d × 10) S53: Calculate the layout positions of the remaining heating wires D i = (D n - D1) / n 7. The design method for improving the thermal uniformity of a semiconductor wafer heater according to any one of claims 1-4, characterized in that Step S6 specifically includes the following steps: S61: Select the points i for measuring temperature uniformity and calculate the temperatures Ti at these points Ti = f i (ρ, c, k, rh, e, P, U, T), f i represents the partial differential equation function for solving the temperature distribution Preferably, the partial differential equation function for solving the temperature distribution can adopt the direct calculation method, the finite element method, or other feasible methods. S62: Calculate the uniformity S of the temperatures at each point in S61 S63: Fine - tune the value of D1 such that the fine - tuned D'1 = D1+σ, where σ should be a relatively small value, and then repeat steps S61 and S62 to obtain S’ S64: Determine whether to adopt the fine - tuned value of D1 Specifically, if S‘ < S, then adopt the adjusted value D'1 of D1, otherwise do not change the value of D1. S65: Determine whether the fine - tuning of D1 is in place Specifically, if the adjusted value is adopted, then repeat the steps of S63 and S64, otherwise determine that the adjustment of D1 is in place. S66: Fine - tune the layout positions of all heating wires Specifically, for all Di, repeat the steps in S63 - S65. After completion, the layout optimization of all heating wires is completed.

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