Strip-shaped and strip-shaped ion implantation device and method based on vacuum arc evaporation

Abstract

The invention provides a strip-shaped and strip-shaped ion implantation device and method based on arc vacuum evaporation. The method comprises the following steps: firstly, generating required strip-shaped and strip-shaped arc plasma by using vacuum arc; and then accelerating ions in the strip-shaped strip-shaped vacuum arc plasma through mesh acceleration to obtain a strip-shaped strip-shaped high-energy ion beam band, and injecting the strip-shaped strip-shaped high-energy ion beam band into a base material. The problem that the dosage of ions injected by a traditional arc vacuum evaporation source is not uniform is solved, and the method is particularly suitable for the field of ion injection required by continuous line production.

Description

Technical Field

[0001] The present invention relates to an apparatus and method for surface modification of materials, and more particularly to an ion implantation apparatus and method. Background Art

[0002] Ion implantation is a material surface modification means widely used in the industrial field at present. By accelerating ions to form a high-energy particle beam to bombard the substrate, the material properties can be improved. During the ion implantation process, a series of physical and chemical interactions occur between the ion beam and the atoms or molecules in the substrate, resulting in the incident ions gradually losing energy and finally staying in the substrate. This process not only changes the composition, structure and properties of the substrate surface, but also can optimize the surface characteristics of the material or endow it with some new excellent properties, making them harder and more wear-resistant. It can also adjust the conductivity of semiconductors to manufacture various electronic components. In the biomedical field, it can also be used to process biomaterials and change the biocompatibility of materials, etc. It has been widely applied in the fields of machinery, industrial molds, optics, electronics, medicine, etc.

[0003] In the mid-1980s, Dr. Ian Brown of the University of California, Berkeley, USA developed the MEVVA source (metal vapor vacuum arc ion source) technology. After the advent of this new type of high-current metal (carbon-containing) ion source, it was quickly applied to the surface modification of non-semiconductor materials by ion implantation and caused a revolution in high-current metal ion implantation. This unique ion implantation machine is called the new generation of metal ion implantation machine.

[0004] This technology has many advantages, such as: ① It can generate a high-current beam of milliamperes for solid metal elements (including carbon) on the periodic table; ② The ion purity depends on the purity of the cathode material, so it can reach a very high purity, and at the same time, the expensive and complex mass analyzer can be omitted; ③ Metal ions generally have several charge states, so a higher ion energy can be obtained with a lower extraction voltage, and ion implantation with the superposition of several energies can be achieved with one extraction voltage; ④ The beam current is divergent, and the beam current constraint and scanning system can be omitted to achieve a large implantation area. Its revolution mainly lies in two aspects. One is its high performance, and the other is that the structure of the ion implantation machine is greatly simplified, mainly consisting of three parts: an ion source, a target chamber and a vacuum system.

[0005] However, at present, MEVVA sources at home and abroad all use small cathode arc pulse discharge, which diffuses in a columnar space and then is accelerated by the extraction acceleration system to achieve ion implantation. Although there are already a large number of application scenarios, because its ion beam is generally circular, the ions in the ion beam are unevenly distributed in the entire circle. Generally, the ion density is high in the middle near the center of the circle and low at the edge. Especially in continuous production where the substrate needs to be translated, the implantation dose received by the substrate moving through the middle of the beam near the center of the circle is higher than that of the substrate moving through the edge of the beam. Therefore, it is not suitable for continuous line production applications. Summary of the invention

[0006] One of the purposes of the present invention is to provide a new ion implantation device and method to achieve uniform ion implantation for a continuous production line.

[0007] To achieve the above-mentioned purpose, the present invention provides a strip-shaped ion implantation device based on vacuum arc evaporation, comprising a strip-shaped vacuum arc plasma ignition generation system and an ion extraction and acceleration system, wherein the strip-shaped ion implantation device obtains the implanted element by means of cathode arc plasma, and by ensuring the purity of the target material element composition, the purity of the ion implantation element is ensured, and no element sorting mechanism is required; the strip-shaped refers to that within one implantation cycle, on a cross section perpendicular to the ion beam direction, the distribution of plasma and the distribution of high-energy beam ion flow are long strip-shaped distributions, and the characteristic of this long strip shape is that the size in one direction is larger than that in another direction; the strip-shaped vacuum arc plasma ignition generation system comprises an arc plasma ignition system and an arc maintenance system, and the arc plasma ignition system can be a high-voltage arc ignition system, a contact arc ignition system, or a laser arc ignition system, and the arc etc. The plasma arc ignition system excites charged particles between the cathode and the anode to ignite the vacuum arc plasma when the arc plasma ignition system generates enough charged particles. The arc maintenance system maintains the cathode arc discharge pulse after the arc plasma ignition system generates enough charged particles. The length of the discharge pulse can be adjusted according to the dosage required for injection. The ion extraction and acceleration system of the vacuum cathode arc plasma comprises at least a screen grid and an extraction grid. A high voltage required for ion injection is applied between the screen grid and the extraction grid to accelerate the ions extracted from the screen grid to form a high-energy ion beam. The length direction of the screen grid and the extraction grid is greater than the width direction, which is suitable for shielding and extracting ions in strip-shaped plasma. The ion beam after extraction can present a strip-shaped distribution, that is, the cross section of the formed high-energy ion beam with strip-shaped distribution maintains a strip-shaped ion flow distribution.

[0008] As a preferred embodiment, an acceleration grid is arranged between the screen grid and the extraction grid.

[0009] Preferably, the screen grid is connected and fixed to the lower end of the vacuum cathode arc diffusion cylinder.

[0010] Preferably, the strip-shaped vacuum arc plasma can be a plasma formed by the combined arc discharges of multiple linearly arranged vacuum cathode rods, with a strip-shaped spatial distribution; it can also be a plasma with a strip-shaped spatial distribution obtained by driving the vacuum arc plasma through a magnetic field for a certain period of time; it can also be a strip-shaped plasma formed by laser scanning the arc; or it can be a plasma formed by the combined arc discharges of multiple linearly arranged cylindrical cathodes or multiple filamentary cathodes, with a strip-shaped spatial distribution.

[0011] Preferably, the arc ignition method can be high-voltage arc ignition, contact arc ignition, or laser arc ignition; the movement of the substrate can be stepwise or continuous.

[0012] Preferably, the ion implantation device can be installed sideways, installed at the top, or installed upside down, including sideways installation, top installation, and upside-down installation.

[0013] Preferably, the implanted ion type can be metal ions or non-metal ions; the shape of the substrate can be a coil, a block, or a plate; the type of the substrate can be metal or non-metal; the implanted ion element can be the same as the element contained in the substrate or different from the element contained in the substrate.

[0014] Preferably, the ion implantation device uses a single strip-shaped cathode and a three-grid ion optical system including a screen grid, an acceleration grid, and a deceleration grid. The cathode material is high-purity nickel, and the substrate is a roll-to-roll plastic film, which includes PTFE and PI. The plasma generation method is to drive the vacuum arc to scan through a magnetic field to generate a plasma containing Ni ions, and the arc ignition method is high-voltage arc ignition.

[0015] On the other hand, the present invention provides a strip-shaped ion implantation method based on vacuum arc evaporation. The strip-shaped ion implantation method obtains the implanted element by means of cathode arc plasma. By ensuring the purity of the target element composition, the purity of the implanted ion element is ensured, and there is no need for an element sorting mechanism. The strip shape means that within an implantation cycle, on the cross-section perpendicular to the ion beam direction, the distribution of the plasma and the distribution of the high-energy beam ion current are in a long strip shape. The characteristic of this long strip shape is that the size in one direction is greater than the size in the other direction. Among them, the ion implantation method first uses a vacuum arc to generate the required strip-shaped arc plasma; then, through grid acceleration, the ions in the strip-shaped vacuum arc plasma are accelerated to obtain a strip-shaped high-energy ion beam band, which is implanted into the substrate.

[0016] As a preferred embodiment, the method further includes the following steps: (1): Connect the ion source to the ion source auxiliary power supply, install the substrate in the vacuum chamber and adjust it to a suitable position, and set the moving speed of the copper foil; (2): Close the vacuum chamber and evacuate the entire environment to a vacuum of 1×10 -3 Pa; (3): Start the power supply, set the injection voltage to 0.1 - 50 kV, the anti-return voltage to 0.5 - 3.5 kV, the arc ignition voltage to 0.2 - 10 kV, the arc ignition frequency to 0 - 20 Hz, and the sustaining arc current to 50 - 500 A; Turn on the power supply and set the ion implantation time according to the injection dose and the substrate treatment area; (4): After the implantation is completed, turn off the power supply and discharge the power supply.

[0017] Compared with the prior art, the present invention overcomes the problems of the traditional MEVVA source that uses small cathode arc pulse discharge to form a columnar space-diffused vacuum arc plasma. The high-energy ion beam accelerated by the extraction and acceleration system is generally circular, and the ions in the ion beam are unevenly distributed throughout the circle. In particular, the present invention avoids the problem that when the cross-section of the circular high-energy particle beam is continuously produced in a certain direction, it must stop. It overcomes the problem that if the traditional MEVVA source operates continuously, the ion implantation dose density in the middle part is higher than that at the edge. It can be applied to the production application field of continuous lines.

[0018] In short, the present invention has the following beneficial effects: It can be used in a continuous production line to achieve uniform ion implantation on the products of a continuously operating production line. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] In order to more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the following will briefly introduce the drawings required for the description of the embodiments or the prior art. Obviously, the drawings in the following description are only used to explain the concept of the present invention.

[0020] Figure 1 Schematic diagram of the strip-shaped ion implantation device of the present invention.

[0021] Figure 2 Schematic diagram of a single strip-shaped cathode or a laser-scanned arc forming a strip-shaped arc plasma of the present invention.

[0022] Figure 3 Schematic diagram of multiple small cylindrical cathodes or multiple filament cathodes combined to form a strip-shaped arc plasma of the present invention.

[0023] Figure 4 Schematic diagram of the application of the strip-shaped ion implantation device and method on an assembly line. DETAILED DESCRIPTION OF THE INVENTION

[0024] In the following, embodiments of the strip-shaped ion implantation device and method based on vacuum arc evaporation according to the present invention will be described with reference to the accompanying drawings.

[0025] The embodiments described herein are specific embodiments of the present invention for illustrating the concept of the present invention, and are all explanatory and exemplary, and should not be construed as limiting the embodiments of the present invention and the scope of the present invention. In addition to the embodiments described herein, those skilled in the art can also adopt other obvious technical solutions based on the content disclosed in the claims and the specification of the present application. These technical solutions include technical solutions that make any obvious substitutions and modifications to the embodiments described herein.

[0026] The drawings in this specification are schematic diagrams to assist in explaining the concept of the present invention, and schematically show the shapes of various parts and their mutual relationships. Please note that in order to clearly show the structures of the components in the embodiments of the present invention, the drawings may not be drawn in the same proportion. The same reference numerals are used to represent the same or similar parts.

[0027] The strip-shaped ion implantation method based on vacuum arc plasma evaporation of the present invention is as follows: forming the spatial distribution of the vacuum arc plasma into a strip shape, and obtaining a strip-shaped high-energy ion beam through ion extraction and acceleration to achieve strip-shaped ion implantation.

[0028] The so-called strip shape means that in a cross-section perpendicular to the direction of the ion beam within one implantation period, the distribution of the plasma and the distribution of the high-energy beam ion current are in a long strip shape. The characteristic of this long strip shape is that the dimension in one direction is larger than that in the other direction.

[0029] The strip-shaped ion implantation device and method of the present invention obtain the elements to be implanted through cathode arc plasma. Ensuring the purity of the target element composition ensures the purity of the ion implantation elements, and there is no need for an element sorting mechanism.

[0030] Figure 1 It is a schematic diagram of the strip-shaped ion implantation device of the present invention, which includes: a strip-shaped vacuum arc plasma ignition and generation system 1; an ion extraction and acceleration system 2 for the vacuum cathode arc plasma; and a high-energy ion beam 3 with a strip-shaped cross-section.

[0031] The strip-shaped vacuum arc plasma ignition and generation system 1 includes an arc plasma ignition system and an arc maintaining system.

[0032] The arc plasma ignition system can be a high-voltage ignition system, a contact ignition system, or a laser ignition system. When the arc plasma is not excited, it can excite the charged particles between the cathode and the anode to ignite the vacuum arc plasma.

[0033] The dimensional arc system refers to a system that can maintain the cathode arc discharge pulse after enough charged particles are generated in the arc ignition system. The length of the discharge pulse can be adjusted according to the required dose of injection.

[0034] The ion extraction and acceleration system 2 of the vacuum cathode arc plasma includes at least one screen grid and one extraction grid. A high voltage required for ion injection extraction is applied between the screen grid and the extraction grid to accelerate the ions extracted from the screen grid, forming a high-energy ion beam. The length directions of both the screen grid and the extraction grid are greater than the width direction, which is suitable for the shielding and extraction of ions in the strip-shaped plasma, and the extracted ion beam can also show a strip-shaped distribution.

[0035] For the formed high-energy ion beam with a strip-shaped distribution, its cross-section also maintains the strip-shaped ion current distribution. Generally, the workpiece to be injected can be placed vertically under the high-energy particle beam and run in a direction parallel to the strip width for continuous particle injection.

[0036] Of course, in order to increase the injection dose, the workpiece to be injected can also be run in a direction parallel to the strip length. Therefore, the strip-shaped high-energy beam can adjust the injection dose by controlling the crossing angle with the running direction of the production line.

[0037] The high-energy ion beam 3 with a strip-shaped cross-section is a strip-shaped vacuum arc plasma. Looking at the cross-section of the generated plasma along the vertical plane of the ion beam flight direction, it shows a strip-shaped distribution. The strip-shaped vacuum arc plasma can be a plasma formed by the combined arc discharge of multiple linearly arranged vacuum cathode rods into a strip-shaped spatial distribution; it can also be a plasma obtained by driving the vacuum arc plasma through a magnetic field for a certain period of time to scan to obtain a strip-shaped spatial distribution; it can also be a strip-shaped plasma formed by laser scanning the arc; it can also be a plasma formed by the combined arc discharge of multiple linearly arranged cylindrical cathodes or multiple filament cathodes into a strip-shaped spatial distribution.

[0038] Two examples of obtaining strip-shaped arc plasma are shown below.

[0039] For Example 1, please refer to Figure 2 , which is a strip-shaped arc plasma formed by a single strip-shaped cathode or laser scanning arc of the present invention. Some structures of the ion injection device shown therein include: a strip-shaped cathode 4 composed of elements to be injected; a vacuum cathode arc diffusion cylinder 5; a vacuum cathode arc plasma screen grid 6; an acceleration grid 7; a deceleration grid 8, and the deceleration grid 8 is a component that can be selected by those skilled in the art according to needs and is not a component that must be installed in this part of the structure; and, a strip-shaped arc plasma 10 formed by driving the vacuum arc to scan through a magnetic field or by laser scanning the arc by a single cathode.

[0040] See Example 2 Figure 3 which is a schematic diagram of a bar-shaped ribbon arc plasma formed by combining multiple small cylindrical cathodes or multiple filamentary cathodes of the present invention. Part of the structure of the ion implantation device shown therein includes: multiple small cylindrical cathodes or multiple filamentary cathodes 9; a vacuum cathode arc diffusion cylinder 5; a vacuum cathode arc plasma screen grid 6, which is connected and fixed to the lower end of the vacuum cathode arc diffusion cylinder 5, and the lower end refers to one end of the vacuum cathode arc diffusion cylinder 5 along the downstream direction of the arc plasma flow; an acceleration grid 7; a deceleration grid 8, which is a component that can be selected by those skilled in the art according to needs and is not a component that must be installed in this part of the structure; and, a plasma 11 formed by the vacuum arcs of multiple small cylindrical cathodes or multiple filamentary cathodes in a strip-shaped spatial distribution.

[0041] Next, further in combination with the manner of forming a bar-shaped ribbon arc plasma shown in Example 2 Figure 4 to illustrate an embodiment of the bar-shaped ribbon ion implantation device and method of the present invention, the Figure 4 is a schematic diagram of the application of the bar-shaped ribbon ion implantation device and method on a production line.

[0042] In this specific embodiment, the ion source device is as Figure 3 shown, using a single bar-shaped cathode and using a three-grid ion optical system, including a screen grid 6, an acceleration grid 7, and a deceleration grid 8. The cathode material is high-purity nickel (Ni), and the substrate is a roll-to-roll plastic film (such as PTFE, PI, etc.) as Figure 4 shown. The plasma generation method is magnetic field-driven vacuum arc scanning to generate a plasma containing Ni ions, and the arc ignition method is high-voltage arc ignition.

[0043] In this specific embodiment, the selected materials and process methods are only examples, and those skilled in the art can select specific materials, types of working gases, vacuum degrees, and other process parameters according to needs. For example, it can be selected whether to perform surface cleaning on the substrate, chemical solvent cleaning or ion cleaning can be used, the surface cleaning solvent can be other solvents such as tetrachloromethane, and the ion cleaning process can also be chemical reaction ion cleaning, etc.

[0044] In addition, those skilled in the art can understand that: in order to increase the implantation dose, the workpiece to be implanted can also be run parallel to the direction of the strip length. Therefore, the strip-shaped high-energy beam can adjust the implantation dose by controlling the crossing angle with the running direction of the production line.

[0045] In addition, the present invention can also be used in occasions such as high-energy particle beam etching and bombardment. The continuous production line can also run in a direction inclined at a certain angle to the flying direction of the high-energy particle beam to etch or bombard the workpieces on the continuous line.

[0046] The specific steps of this specific embodiment are as follows:

[0047] Step (1): Connect the ion source to the ion source auxiliary power supply, install the substrate in the vacuum chamber and adjust it to the appropriate position, and set the moving speed of the copper foil.

[0048] Step (2): Close the vacuum chamber and evacuate the entire environment to a vacuum (1×10 -3 Pa).

[0049] Step (3): Start the power supply, set the injection voltage to 0.1 - 50 kV, the anti - return voltage to 0.5 - 3.5 kV, the arc - starting voltage to 0.2 - 10 kV, the arc - starting frequency to 0 - 20 Hz, and the arc - maintaining current to 50 - 500 A. Turn on the power supply and set the ion injection time according to the injection dose and the substrate treatment area.

[0050] Step (4): After the injection is completed, turn off the power supply and discharge the power supply.

[0051] Please note that the above - mentioned embodiments are only exemplary embodiments for explaining the concept of the present invention. The strip - shaped vacuum arc plasma in the present invention can be a strip - shaped plasma formed by a single cathode driving a vacuum arc scan through a magnetic field or by laser - scanning an arc (as shown in Figure 2 ), or it can be a plasma with a strip - shaped spatial distribution formed by the combination of vacuum arcs of multiple linearly arranged cylindrical cathodes or multiple filament cathodes (as shown in Figure 3 ). The characteristic of the strip - shaped vacuum arc plasma is that, viewed along the vertical plane of the plasma, the size in one direction is larger than the size in the other direction.

[0052] The arc - starting method can be high - voltage arc - starting, or contact arc - starting, or laser arc - starting or other arc - starting methods.

[0053] The movement of the substrate can be step - by - step, or continuous or other methods.

[0054] The type of ions injected can be metal ions or non - metal ions; the shape of the substrate can be a roll material as shown in Figure 4 , or a block or a plate, etc.; the type of the substrate can be metal or non - metal; the injected ion element can be an element contained in the substrate or different from the elements contained in the substrate.

[0055] The strip-shaped ion implantation method and device of the present invention may actually also include a vacuum system, a vacuum chamber, a continuous linear motion system, relevant power supplies, and other well-known devices required for surface modification, etc. The vacuum system is connected to the vacuum chamber through an exhaust hole to provide a background vacuum for the vacuum chamber and, together with the gas supply system, provide the gas pressure requirements for surface modification.

[0056] The strip-shaped ion implantation device and method of the present invention can be installed on the side, on the top, or upside down. The directions described in the present invention are only for the convenience of discussing the present invention.

[0057] The influence of gravity on the application of the present invention can be ignored, which can be understood by those skilled in the art.

[0058] The present invention proposes a vacuum arc plasma ion implantation technology with a strip-shaped ion implantation beam. This technology can form a strip-shaped ion implantation beam and is applicable to the production application field of continuous lines.

[0059] The above describes the implementation manners of a strip-shaped ion implantation device and method based on vacuum arc evaporation of the present invention, aiming to explain the spirit of the present invention. The specific features of the inventive concept of the present invention can be specifically designed according to the functions of the features disclosed above, and these designs can be achieved by those skilled in the art. Moreover, the disclosed technical features are not limited to the combinations with other disclosed features. Those skilled in the art can also make other combinations among the technical features according to the purpose of the present invention to achieve the purpose of the present invention.

Claims

1. A strip-shaped ion implantation device based on vacuum arc evaporation, comprising a strip-shaped vacuum arc plasma ignition and generation system and an ion extraction and acceleration system. Among them, The strip-shaped ion implantation device obtains the implanted elements by means of a cathode arc plasma. By ensuring the purity of the target element composition, the purity of the ion implantation elements is ensured, and there is no need for an element sorting mechanism. The strip shape means that within one implantation cycle, on the cross-section perpendicular to the ion beam direction, the distribution of the plasma and the distribution of the high-energy beam ion current are in a strip shape, and the characteristic of this strip shape is that the dimension in one direction is greater than that in the other direction. The strip-shaped vacuum arc plasma ignition and generation system includes an arc plasma ignition system and a sustaining arc system. The arc plasma ignition system can be a high-voltage ignition system, a contact ignition system, or a laser ignition system. When the arc plasma is not excited, the arc plasma ignition system excites the charged particles between the cathode and the anode to ignite the vacuum arc plasma. After the arc plasma ignition system generates enough charged particles, the sustaining arc system maintains the cathode arc discharge pulse, and the length of the discharge pulse can be adjusted according to the dose required for implantation. The ion extraction and acceleration system of the vacuum cathode arc plasma includes at least a screen grid and an extraction grid. A high voltage required for extracting ions for implantation is applied between the screen grid and the extraction grid to accelerate the ions extracted from the screen grid to form a high-energy ion beam. The length directions of both the screen grid and the extraction grid are greater than the width directions, which is suitable for shielding and extraction of ions in the strip-shaped plasma, and the ion beam after extraction can exhibit a strip-shaped distribution, that is, the cross-section of the formed strip-shaped high-energy ion beam maintains the strip-shaped ion current distribution.

2. The ion implantation apparatus according to claim 1, wherein, An acceleration grid is provided between the screen grid and the extraction grid.

3. The ion implantation apparatus according to claim 1, wherein, The screen grid is connected and fixed to the lower end of the vacuum cathode arc diffusion cylinder.

4. The ion implantation device according to claim 1, wherein The strip-shaped vacuum arc plasma can be a plasma formed by the arc discharge of multiple linearly arranged vacuum cathode rods combined into a strip-shaped spatial distribution of plasma; it can also be a plasma obtained by driving the vacuum arc plasma to scan for a certain period of time through a magnetic field to obtain a strip-shaped spatial distribution of plasma; it can also be a strip-shaped plasma formed by laser scanning the arc; or a plasma formed by the arc discharge of multiple linearly arranged cylindrical cathodes or multiple filamentary cathodes combined into a strip-shaped spatial distribution of plasma.

5. The ion implantation device according to claim 1, wherein, The ignition method can be high-voltage ignition, contact ignition, or laser ignition; the movement of the substrate can be step-by-step or continuous.

6. The ion implantation apparatus according to claim 1, wherein, This ion implantation device can be installed on the side, installed on the top, or installed upside down.

7. The ion implantation apparatus according to claim 1, wherein, The types of ions to be implanted can be metal ions or non-metal ions; the shape of the substrate can be a coil, a block, or a plate; the type of the substrate can be metal or non-metal; the implanted ion elements can be the elements contained in the substrate or different from the elements contained in the substrate.

8. The ion implantation device according to claim 1 uses a single strip-shaped cathode and a three-grid ion optical system including a screen grid, an acceleration grid, and a deceleration grid. The cathode material is high-purity nickel, and the substrate is a roll-to-roll plastic film, which includes PTFE and PI. The plasma generation method is magnetic field-driven vacuum arc scanning to generate a plasma containing Ni ions, and the arc ignition method is high-voltage arc ignition.

9. A strip-shaped ion implantation method based on vacuum arc evaporation. The strip-shaped ion implantation method obtains the implanted elements by means of cathode arc plasma. By ensuring the purity of the target element composition, the purity of the ion implantation elements is ensured, and there is no need for an element sorting mechanism. The strip-shaped means that within one implantation period, on the cross-section perpendicular to the ion beam direction, the distribution of the plasma and the distribution of the high-energy beam ion current are in a strip-shaped distribution. The characteristic of this strip shape is that the size in one direction is larger than that in the other direction. Among them, This ion implantation method first uses a vacuum arc to generate the required strip-shaped arc plasma; then, through grid acceleration, the ions in the strip-shaped vacuum arc plasma are accelerated to obtain a strip-shaped high-energy ion beam band and implanted into the substrate.

10. The ion implantation method according to claim 9, wherein, It also includes the following steps: (1): Connect the ion source to the ion source auxiliary power supply, install the substrate in the vacuum chamber and adjust it to the appropriate position, and set the moving speed of the copper foil. (2): Close the vacuum chamber and evacuate the entire environment to a vacuum of 1×10 -3 Pa; (3): Start the power supply, set the implantation voltage to 0.1 - 50 kV, the anti-back voltage to 0.5 - 3.5 kV, the arc ignition voltage to 0.2 - 10 kV, the arc ignition frequency to 0 - 20 Hz, and the sustaining arc current to 50 - 500 A; turn on the power supply and set the ion implantation time according to the implantation dose and the substrate treatment area. (4): After the implantation is completed, turn off the power supply and discharge the power supply.

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