Device and method for high-energy ion implantation

Abstract

The invention discloses a device and a method for high-energy ion implantation, and relates to the field of semiconductor manufacturing. The device for high-energy ion implantation comprises an ion emission unit, the injection end of the ion emission unit is provided with a cyclotron unit, the cyclotron unit is connected with an ion conveying unit, and the ion conveying unit is connected with an ion receiving unit. According to the device for high-energy ion implantation, since the direction of the lorentz force borne by the stripped positive ions in the magnetic field is opposite to that of the negative ions, the stripped positive ions can deflect in the opposite direction, the stripped positive ion beam is led out through the ion conveying unit, and then after being conveyed by the ion conveying unit, the stripped positive ions can be injected into the negative ions. High-precision ion implantation is carried out on the ion receiving unit, acceleration of high-energy particles can be realized in a relatively small space, and the energy requirement required by chip irradiation can be met.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor manufacturing, and specifically to a device and method for high-energy ion implantation. Background Art

[0002] Power semiconductor devices are widely used in fields such as military, new energy, aerospace, rail transit, and UHV power transmission and transformation, especially in ships, aviation, aerospace, military electronics related to national defense security, and new energy fields such as high-speed rail, power, and electric vehicles. The fundamental reason is that the most core proton irradiation (hydrogen ion implantation) equipment and processes are missing in the wafer manufacturing link of power semiconductor devices, and the fast soft recovery performance necessary for high-end power devices cannot be achieved.

[0003] Ion implantation refers to injecting, bunching, accelerating, and deflecting ions from an ion source and then irradiating them onto a target material, thereby changing the chemical or physical properties of the target material. In semiconductor manufacturing, thermal diffusion or ion implantation is usually used to dope the target material, such as N-type or P-type doping.

[0004] Existing ion implantation equipment is difficult to meet the requirements of high energy, or multiple accelerators are used in series to increase the energy of particles, making the design and implementation of the series accelerator relatively complex, with a large overall size and high cost, and it is difficult to meet the daily needs of high-energy ion implantation. Summary of the Invention

[0005] Aiming at the deficiencies of the existing technology, the present invention provides a device and method for high-energy ion implantation, which solves the problems that existing ion implantation equipment is difficult to meet the requirements of high energy, or multiple accelerators are used in series to increase the energy of particles, making the design and implementation of the series accelerator relatively complex, with a large overall size and high cost.

[0006] To achieve the above objectives, the present invention is realized through the following technical solutions: A device for high-energy ion implantation includes an ion emission unit. A cyclotron acceleration unit is provided at the injection end of the ion emission unit. The ion emission unit can inject ions into the cyclotron acceleration unit. The cyclotron acceleration unit is connected to an ion transport unit, and the cyclotron acceleration unit can inject the accelerated ions into the ion transport unit. The ion transport unit is connected to an ion receiving unit, and the ion transport unit transports the ions to the ion receiving unit for reception;

[0007] The cyclotron acceleration unit includes:

[0008] An acceleration box body, inside which a first magnetic pole and a second magnetic pole are installed, and the first magnetic pole and the second magnetic pole are symmetrically arranged inside the acceleration box body;

[0009] The main coil, which is installed inside the acceleration box and is between the first magnetic pole and the second magnetic pole;

[0010] The vacuum chamber, which is set inside the acceleration box and is between the first magnetic pole and the second magnetic pole, and the vacuum chamber is inside the main coil;

[0011] The stripping target, which is installed in the vacuum chamber.

[0012] Preferably, the ion emission unit includes:

[0013] The ion source, which can generate and provide particles, and the particles include but are not limited to protons, deuterium, and alpha particles, as well as H-, D- negative ions;

[0014] The injection line, which is installed between the ion source and the acceleration box, and the injection line can introduce the ions generated by the ion source into the acceleration box.

[0015] Preferably, a high-frequency cavity system is arranged outside the vacuum chamber. The high-frequency cavity system is in the main coil. The main coil cooperates with the high-frequency cavity system to form an electric field in the vacuum chamber, and the main coil cooperates with the high-frequency cavity system to provide acceleration energy for the electric field and control the acceleration frequency.

[0016] Preferably, a vacuum pump is installed outside the acceleration box, and a pipeline is arranged between the end of the vacuum pump and the vacuum chamber.

[0017] Preferably, the ion transport unit includes:

[0018] The vacuum pipeline, which is installed between the cyclotron acceleration unit and the ion receiving unit, and the inside of the vacuum pipeline is a vacuum environment;

[0019] The extraction switch magnet, which is fixedly installed at one end of the vacuum pipeline close to the cyclotron acceleration unit, and the extraction switch magnet can generate a magnetic field perpendicular to the axial direction of the particles at the connection between the vacuum pipeline and the cyclotron acceleration unit. This magnetic field can extract the accelerated charged particles from the cyclotron acceleration unit and guide them into the vacuum pipeline;

[0020] The beam line magnet, which is fixedly installed in the vacuum pipeline. The beam line magnet mainly includes a quadrupole lens and an analyzing magnet. The quadrupole lens cooperates with the analyzing magnet to realize the transmission and focusing of the beam;

[0021] The scanning magnet, which is fixedly installed at one end of the vacuum pipeline close to the ion receiving unit, and the scanning magnet is used to change the direction of the particle beam, expand the irradiation range, and optimize the beam distribution.

[0022] Preferably, the ion receiving unit includes:

[0023] A vacuum irradiation chamber, which is connected to a vacuum pipeline, and the interior of the vacuum irradiation chamber is a vacuum environment;

[0024] A wafer, which is arranged inside the vacuum irradiation chamber, and the wafer is used to receive implanted ions.

[0025] Preferably, a robotic arm is installed inside the vacuum irradiation chamber, and the output end of the robotic arm is connected to the wafer by means of electrostatic adsorption.

[0026] Preferably, the robotic arm is a multi-dimensional robotic arm, and the robotic arm can drive the wafer to move in multiple dimensions.

[0027] A method for high-energy ion implantation, the method comprising the following steps:

[0028] Step 1: An ion emission unit is responsible for generating negative ions, and the generated negative ions are introduced into a cyclotron acceleration unit after being focused and the direction is adjusted;

[0029] Step 2: The negative ions enter the vacuum chamber in the acceleration box. At this time, the first magnetic pole, the second magnetic pole and the main coil outside the vacuum chamber act on the vacuum chamber at the same time. Then, by the combined action of the magnetic field and the electric field, the ions perform periodic motion on the vacuum chamber and are repeatedly accelerated, so as to reach the required energy. And during the acceleration of the vacuum chamber, the ions will pass through the stripping film on the stripping target, and under the action of the stripping film, two outer electrons of the negative ions are stripped, thus turning into positive ions;

[0030] Step 3: Since the direction of the Lorentz force received by the stripped positive ions in the magnetic field is opposite to that of the negative ions, they will deflect in the opposite direction. The stripped positive ion beam is led out through the ion transport unit, and then after being transported by the ion transport unit, high-precision ion implantation of the ion receiving unit is realized.

[0031] The present invention discloses a device and a method for high-energy ion implantation, and the beneficial effects thereof are as follows:

[0032] 1. In the device for high-energy ion implantation, negative ions enter the vacuum chamber in the acceleration box. At this time, the first magnetic pole, the second magnetic pole, and the main coil outside the vacuum chamber act on the vacuum chamber simultaneously. Then, by the combined action of the magnetic field and the electric field, the ions perform periodic motion on the vacuum chamber and are repeatedly accelerated, so as to reach the required energy. During the acceleration process in the vacuum chamber, the ions will pass through the stripping film on the stripping target. Under the action of the stripping film, two outer electrons of the negative ions are stripped, thus transforming into positive ions. Since the direction of the Lorentz force received by the stripped positive ions in the magnetic field is opposite to that of the negative ions, they will deflect in the opposite direction. Through the ion transport unit, the stripped positive ion beam is led out. Then, after being transported by the ion transport unit, high-precision ion implantation of the ion receiving unit is achieved. By using the cyclotron method to realize ion implantation, this device can accelerate high-energy particles in a relatively small space and can meet the energy requirements for chip irradiation.

[0033] 2. In the device for high-energy ion implantation, the extraction switch magnet can generate a magnetic field perpendicular to the particle axis at the connection between the vacuum pipeline and the cyclotron acceleration unit. This magnetic field can extract the accelerated charged particles from the cyclotron acceleration unit and guide them into the vacuum pipeline. Then, through the beam line magnet, the beam line magnet mainly includes a quadrupole lens and an analyzing magnet. The quadrupole lens cooperates with the analyzing magnet to achieve the transmission and focusing of the beam. After passing through the scanning magnet, the scanning magnet is used to change the direction of the particle beam, expand the irradiation range, and optimize the beam distribution, thereby achieving high-precision ion implantation of the ion receiving unit.

[0034] 3. In the device for high-energy ion implantation, the output end of the robotic arm is connected to the wafer by means of electrostatic adsorption, and the wafer is arranged vertically while the beam is injected horizontally. The wafer can be moved multi-dimensionally by the robotic arm to ensure that the wafer can uniformly receive the irradiation dose during the ion implantation process, avoiding local overheating and damage, which is beneficial to achieving precise doping control and uniform dose distribution. Description of the Drawings

[0035] In order to more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the following will briefly introduce the drawings required for the description of the embodiments or the prior art. Obviously, the following drawings are only some embodiments of the present invention. For those of ordinary skill in the art, without creative efforts, other drawings can be obtained based on these drawings.

[0036] Figure 1 It is a schematic structural diagram of the device of the present invention in the vertical placement state;

[0037] Figure 2 It is a schematic structural diagram of the cyclotron acceleration unit of the present invention;

[0038] Figure 3 It is a schematic structural diagram of the ion transport unit of the present invention;

[0039] Figure 4 It is a schematic structural diagram of the ion receiving unit of the present invention;

[0040] Figure 5 It is a schematic structural diagram of the device in the flat state of the present invention.

[0041] In the figure: 1. Ion emission unit; 11. Ion source; 12. Injection line; 2. Cyclotron acceleration unit; 21. Acceleration box; 22. First magnetic pole; 23. Second magnetic pole; 24. Vacuum chamber; 25. Main coil; 26. Stripping target; 27. High-frequency cavity system; 28. Vacuum pump; 3. Ion transport unit; 31. Vacuum pipeline; 32. Extraction switch magnet; 33. Beam line magnet; 34. Scanning magnet; 4. Ion receiving unit; 41. Vacuum irradiation cavity; 42. Manipulator; 43. Wafer. Specific embodiments

[0042] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention are clearly and completely described. Obviously, the described embodiments are some, but not all, of the embodiments of the present invention. All other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present invention without creative efforts shall fall within the protection scope of the present invention.

[0043] The embodiments of the present application provide a device and method for high-energy ion implantation, which solve the problem that existing ion implantation equipment is difficult to meet the requirements of relatively high energy, or multiple accelerators are used in series to increase the energy of particles, making the design and implementation of the series accelerator relatively complex, with a relatively large overall size and high cost. It realizes the entry of negative ions into the vacuum chamber 24 in the acceleration box 21. At this time, the first magnetic pole 22, the second magnetic pole 23, and the main coil 25 outside the vacuum chamber 24 act on the vacuum chamber 24 simultaneously. Then, by the combined action of the magnetic field and the electric field, the ions perform periodic motion on the vacuum chamber 24 and are repeatedly accelerated, so as to reach the required energy. During the acceleration process in the vacuum chamber 24, the ions will pass through the stripping film on the stripping target 26. Under the action of the stripping film, two outer electrons of the negative ions are stripped, thus turning into positive ions. Since the direction of the Lorentz force received by the stripped positive ions in the magnetic field is opposite to that of the negative ions, they will deflect in the opposite direction. Through the ion transport unit 3, the stripped positive ion beam is extracted. Then, after being transported by the ion transport unit 3, high-precision ion implantation of the ion receiving unit 4 is realized. By using the cyclotron accelerator method to realize ion implantation, this device can accelerate high-energy particles in a relatively small space and can meet the energy requirements for chip irradiation.

[0044] To better understand the above technical solution, the above technical solution will be described in detail below in conjunction with the accompanying drawings of the specification and specific embodiments.

[0045] An embodiment of the present invention discloses a device for high-energy ion implantation. As shown in the attached Figures 1-4 figures, it includes an ion emission unit 1. A cyclotron acceleration unit 2 is arranged at the injection end of the ion emission unit 1. The ion emission unit 1 can inject ions into the cyclotron acceleration unit 2. The cyclotron acceleration unit 2 is connected to an ion transport unit 3, and the cyclotron acceleration unit 2 can inject the accelerated ions into the ion transport unit 3. The ion transport unit 3 is connected to an ion receiving unit 4, and the ion transport unit 3 transports the ions into the ion receiving unit 4 for reception;

[0046] The cyclotron acceleration unit 2 includes:

[0047] An acceleration chamber 21. A first magnetic pole 22 and a second magnetic pole 23 are installed inside the acceleration chamber 21, and the first magnetic pole 22 and the second magnetic pole 23 are symmetrically arranged inside the acceleration chamber 21;

[0048] A main coil 25. The main coil 25 is installed inside the acceleration chamber 21 and is located between the first magnetic pole 22 and the second magnetic pole 23;

[0049] A vacuum chamber 24. The vacuum chamber 24 is arranged inside the acceleration chamber 21 and is located between the first magnetic pole 22 and the second magnetic pole 23, and the vacuum chamber 24 is located inside the main coil 25;

[0050] A stripping target 26. The stripping target 26 is installed in the vacuum chamber 24.

[0051] Negative ions are enabled to enter the vacuum chamber 24 inside the acceleration chamber 21. At this time, the first magnetic pole 22, the second magnetic pole 23 and the main coil 25 outside the vacuum chamber 24 act on the vacuum chamber 24 simultaneously. Then, by the combined action of the magnetic field and the electric field, the ions perform periodic motion on the vacuum chamber 24 and are repeatedly accelerated, so as to reach the required energy. During the acceleration process in the vacuum chamber 24, the ions will pass through the stripping film on the stripping target 26. Under the action of the stripping film, two outer electrons of the negative ions are stripped, thus turning into positive ions; since the direction of the Lorentz force received by the stripped positive ions in the magnetic field is opposite to that of the negative ions, they will deflect in the opposite direction. Through the ion transport unit 3, the stripped positive ion beam is led out. Then, after being transported by the ion transport unit 3, high-precision ion implantation of the ion receiving unit 4 is realized. By using the cyclotron, the device can accelerate high-energy particles in a relatively small space and can meet the energy requirements for chip irradiation.

[0052] Specifically disclosed, the ion emission unit 1 includes:

[0053] An ion source 11, which can generate and provide particles, including but not limited to protons, deuterium, and alpha particles, as well as H-, D- negative ions;

[0054] An injection line 12, installed between the ion source 11 and the acceleration chamber 21, which can introduce the ions generated by the ion source 11 into the acceleration chamber 21.

[0055] Furthermore, a high-frequency cavity system 27 is provided outside the vacuum chamber 24. The high-frequency cavity system 27 is located in the main coil 25. The main coil 25 cooperates with the high-frequency cavity system 27 to form an electric field in the vacuum chamber 24, and the main coil 25 cooperates with the high-frequency cavity system 27 to provide acceleration energy for the electric field and control the acceleration frequency.

[0056] Furthermore, a vacuum pump 28 is installed outside the acceleration chamber 21, and a pipeline is provided between the end of the vacuum pump 28 and the vacuum chamber 24.

[0057] Specifically disclosed, the ion transport unit 3 includes:

[0058] A vacuum pipeline 31, installed between the cyclotron acceleration unit 2 and the ion receiving unit 4, and the inside of the vacuum pipeline 31 is in a vacuum environment;

[0059] An extraction switch magnet 32, fixedly installed at one end of the vacuum pipeline 31 close to the cyclotron acceleration unit 2. Since positive ions carry positive charges, the Lorentz force they receive in the magnetic field is perpendicular to both the magnetic field direction and the particle movement direction. Therefore, when the extraction switch magnet 32 can generate a magnetic field perpendicular to the particle axis at the connection between the vacuum pipeline 31 and the cyclotron acceleration unit 2, this magnetic field can extract the accelerated charged particles from the cyclotron acceleration unit 2 and guide them into the vacuum pipeline 31;

[0060] A beam line magnet 33, fixedly installed in the vacuum pipeline 31. The beam line magnet 33 is mainly a quadrupole lens and an analyzing magnet. The quadrupole lens cooperates with the analyzing magnet to achieve the transmission and focusing of the beam;

[0061] The quadrupole lens generates a magnetic field gradient, so that the particles in the beam are respectively subjected to centripetal force and centrifugal force according to different magnetic field gradients, thereby enabling the beam to contract and expand respectively according to different magnetic field gradients to achieve the focusing effect.

[0062] The analyzing magnet utilizes the deflection characteristics of particles in the magnetic field to separate them according to the momentum and energy differences of the particles, for screening specific energy particles.

[0063] The scanning magnet 34 is fixedly installed at one end of the vacuum pipe 31 close to the ion receiving unit 4, and the scanning magnet 34 is used to change the direction of the particle beam, expand the irradiation range, and optimize the beam current distribution.

[0064] By adjusting the direction and intensity of its own magnetic field, the scanning magnet 34 can accurately control the deflection angle of the particle beam; by periodically changing the magnetic field, the particle beam can be scanned within the area, thereby expanding the irradiation range; the scanning magnet 34 can also adjust the density and distribution of the particle beam to ensure that the beam current is evenly distributed within the target area.

[0065] Specifically disclosed, the ion receiving unit 4 includes:

[0066] A vacuum irradiation chamber 41, the vacuum irradiation chamber 41 is connected to the vacuum pipe 31, and the inside of the vacuum irradiation chamber 41 is a vacuum environment;

[0067] A wafer 43, the wafer 43 is arranged inside the vacuum irradiation chamber 41, and the wafer 43 is used to receive the implanted ions.

[0068] Furthermore, a robotic arm 42 is installed inside the vacuum irradiation chamber 41, and the output end of the robotic arm 42 is connected to the wafer 43 by means of electrostatic adsorption.

[0069] Furthermore, the robotic arm 42 is a multi-dimensional robotic arm, and the robotic arm 42 can drive the wafer 43 to move in multiple dimensions.

[0070] Negative ions enter the vacuum chamber 24 in the acceleration box 21. At this time, the first magnetic pole 22, the second magnetic pole 23, and the main coil 25 outside the vacuum chamber 24 act on the vacuum chamber 24 simultaneously. Then, by the combined action of the magnetic field and the electric field, the ions perform periodic motion on the vacuum chamber 24 and are repeatedly accelerated, so as to reach the required energy. During the acceleration process in the vacuum chamber 24, the ions will pass through the stripping film on the stripping target 26. Under the action of the stripping film, two outer electrons of the negative ions are stripped, thus being transformed into positive ions; since the direction of the Lorentz force received by the stripped positive ions in the magnetic field is opposite to that of the negative ions, they will deflect in the opposite direction. Through the ion transport unit 3, the stripped positive ion beam is led out. Then, after being transported by the ion transport unit 3, high-precision ion implantation into the ion receiving unit 4 is realized. By using the cyclotron method to realize ion implantation, this device can accelerate high-energy particles in a relatively small space and can meet the energy requirements for chip irradiation.

[0071] The extraction switching magnet 32 can generate a magnetic field perpendicular to the axial direction of the particles at the connection between the vacuum pipe 31 and the cyclotron unit 2. This magnetic field can extract the accelerated charged particles from the cyclotron unit 2 and guide them into the vacuum pipe 31. Then, through the beam line magnet 33, which mainly includes a quadrupole lens and an analyzing magnet, the quadrupole lens cooperates with the analyzing magnet to achieve the transmission and focusing of the beam. After passing through the scanning magnet 34, which is used to change the direction of the particle beam, expand the irradiation range, and optimize the beam distribution, high-precision ion implantation of the ion receiving unit 4 is realized.

[0072] The output end of the robotic arm 42 is connected to the wafer 43 by means of electrostatic adsorption, and the wafer 43 is arranged vertically with the beam injected horizontally. The wafer 43 can be moved in multiple dimensions by the robotic arm 42 to ensure that the wafer 43 can uniformly receive the irradiation dose during the ion implantation process, avoiding local overheating and damage, which is beneficial to achieving precise doping control and uniform dose distribution.

[0073] It should be emphasized that according to the attached Figure 1 As shown, in this embodiment, the cyclotron unit 2 is placed upright on the ground. At this time, the ion emission unit 1 is installed on the top of the cyclotron unit 2, while the ion transport unit 3 and the ion receiving unit 4 are installed on the side of the cyclotron unit 2. However, during the actual setting process, the ion emission unit 1, the cyclotron unit 2, the ion transport unit 3, and the ion receiving unit 4 can be set at any angle according to actual needs, as long as the ion emission unit 1 can inject ions into the cyclotron unit 2, the cyclotron unit 2 can inject the accelerated ions into the ion transport unit 3, and the ion transport unit 3 transports the ions to the ion receiving unit 4 for reception;

[0074] As attached Figure 5 As shown, at this time, the ion emission unit 1, the cyclotron unit 2, the ion transport unit 3, and the ion receiving unit 4 are placed flat on the ground, making the overall structure of the ion emission unit 1, the cyclotron unit 2, the ion transport unit 3, and the ion receiving unit 4 in a horizontal structure.

[0075] A method for high-energy ion implantation, the method includes the following steps:

[0076] Step 1: The ion emission unit 1 is responsible for generating negative ions, and the generated negative ions are introduced into the cyclotron unit 2 after being focused and the direction is adjusted;

[0077] Step 2: The negative ions enter the vacuum chamber 24 in the acceleration chamber 21. At this time, the first magnetic pole 22, the second magnetic pole 23 and the main coil 25 outside the vacuum chamber 24 act on the vacuum chamber 24 simultaneously. Then, by the combined action of the magnetic field and the electric field, the ions perform periodic motion on the vacuum chamber 24 and are repeatedly accelerated, so as to reach the required energy. During the acceleration process in the vacuum chamber 24, the ions will pass through the stripping film on the stripping target 26. Under the action of the stripping film, two outer electrons of the negative ions are stripped, thus being transformed into positive ions;

[0078] Step 3: Since the direction of the Lorentz force received by the stripped positive ions in the magnetic field is opposite to that of the negative ions, they will deflect in the opposite direction. The stripped positive ion beam is led out through the ion transport unit 3. Then, after being transported by the ion transport unit 3, high-precision ion implantation into the ion receiving unit 4 is achieved.

[0079] The above shows and describes the basic principles, main features and advantages of the present invention. Those skilled in the art should understand that the present invention is not limited by the above embodiments. What is described in the above embodiments and the specification only illustrates the principles of the present invention. Without departing from the spirit and scope of the present invention, the present invention will have various changes and improvements, and these changes and improvements all fall within the scope of the present invention claimed. The scope of the present invention claimed is defined by the appended claims and their equivalents.

Claims

1. A device for high-energy ion implantation, comprising an ion emission unit (1), characterized in that, The injection end of the ion emission unit (1) is provided with a cyclotron acceleration unit (2). The ion emission unit (1) can inject ions into the cyclotron acceleration unit (2). The cyclotron acceleration unit (2) is connected to an ion transport unit (3), and the cyclotron acceleration unit (2) can inject the accelerated ions into the ion transport unit (3). The ion transport unit (3) is connected to an ion receiving unit (4), and the ion transport unit (3) transports the ions into the ion receiving unit (4) for reception; The cyclotron acceleration unit (2) includes: An acceleration chamber (21). Inside the acceleration chamber (21), a first magnetic pole (22) and a second magnetic pole (23) are installed, and the first magnetic pole (22) and the second magnetic pole (23) are symmetrically arranged inside the acceleration chamber (21); A main coil (25). The main coil (25) is installed inside the acceleration chamber (21) and is located between the first magnetic pole (22) and the second magnetic pole (23); A vacuum chamber (24). The vacuum chamber (24) is arranged inside the acceleration chamber (21) and is located between the first magnetic pole (22) and the second magnetic pole (23), and the vacuum chamber (24) is inside the main coil (25); A stripping target (26). The stripping target (26) is installed in the vacuum chamber (24).

2. The device for high-energy ion implantation according to claim 1, wherein The ion emission unit (1) includes: An ion source (11). The ion source (11) can generate and provide particles; An injection line (12). The injection line (12) is installed between the ion source (11) and the acceleration chamber (21), and the injection line (12) can introduce the ions generated by the ion source (11) into the acceleration chamber (21).

3. A device for high-energy ion implantation according to claim 1, characterized in that, A high-frequency cavity system (27) is arranged outside the vacuum chamber (24), and the high-frequency cavity system (27) is inside the main coil (25).

4. A device for high-energy ion implantation according to claim 1, characterized in that, A vacuum pump (28) is installed outside the acceleration chamber (21), and a pipeline is arranged between the end of the vacuum pump (28) and the vacuum chamber (24).

5. A device for high-energy ion implantation according to claim 1, characterized in that, The ion transport unit (3) includes: A vacuum pipeline (31). The vacuum pipeline (31) is installed between the cyclotron acceleration unit (2) and the ion receiving unit (4), and the inside of the vacuum pipeline (31) is in a vacuum environment; An extraction switch magnet (32). The extraction switch magnet (32) is fixedly installed at one end of the vacuum pipeline (31) close to the cyclotron acceleration unit (2); A beam line magnet (33). The beam line magnet (33) is fixedly installed in the vacuum pipeline (31); A scanning magnet (34). The scanning magnet (34) is fixedly installed at one end of the vacuum pipeline (31) close to the ion receiving unit (4).

6. A device for high-energy ion implantation according to claim 1, characterized in that, The ion receiving unit (4) includes: A vacuum irradiation chamber (41). The vacuum irradiation chamber (41) is connected to the vacuum pipeline (31), and the inside of the vacuum irradiation chamber (41) is in a vacuum environment; A wafer (43). The wafer (43) is arranged inside the vacuum irradiation chamber (41), and the wafer (43) is used to receive the injected ions.

7. A device for high-energy ion implantation according to claim 6, characterized in that, A robotic arm (42) is installed inside the vacuum irradiation chamber (41), and the output end of the robotic arm (42) is connected to the wafer (43) by means of electrostatic adsorption.

8. A device for high-energy ion implantation according to claim 7, characterized in that, The robotic arm (42) is a multi-dimensional robotic arm, and the robotic arm (42) can drive the wafer (43) to move in multiple dimensions.

9. A method for high-energy ion implantation according to any one of claims 1-8, characterized in that, The method includes the following steps: Step 1: The ion emission unit (1) is responsible for generating negative ions, and the generated negative ions are introduced into the cyclotron acceleration unit (2) after being focused and redirected. Step 2: The negative ions enter the vacuum chamber (24) in the acceleration box (21). At this time, the first magnetic pole (22), the second magnetic pole (23), and the main coil (25) outside the vacuum chamber (24) act on the vacuum chamber (24) simultaneously. Then, by the combined action of the magnetic field and the electric field, the ions perform periodic motion on the vacuum chamber (24) and are repeatedly accelerated, so as to reach the required energy. During the acceleration process in the vacuum chamber (24), the ions will pass through the stripping film on the stripping target (26), and under the action of the stripping film, the two outer electrons of the negative ions are stripped, thus turning into positive ions. Step 3: Since the direction of the Lorentz force received by the stripped positive ions in the magnetic field is opposite to that of the negative ions, they will deflect in the opposite direction. The stripped positive ion beam is led out through the ion transport unit (3), and then, after being transported by the ion transport unit (3), high-precision ion implantation is achieved on the ion receiving unit (4).

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