Path switching STT-MRAM read circuit, working method and 2-bit unit read circuit

Abstract

The invention discloses a path switching STT-MRAM read circuit, a working method and a 2-bit unit read circuit, circuits are adjusted to enter different equivalent states through four groups of switches, part of transistors do not work in the process, and dynamic power consumption can be reduced to a certain extent; by introducing the path switching operation, the two read operations are mutually independent, and the circuit can be directly compared after being pre-charged without other more complex operations, so that the sensing delay is remarkably reduced. According to the invention, the reading accuracy and the reading speed can be improved by utilizing a path switching method.

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