Power supply device and electronic equipment

Abstract

The invention relates to the technical field of energy storage, and provides a power supply device and electronic equipment.The power supply device comprises a circuit board, a heat conduction substrate and at least one power semiconductor device, the circuit board and the heat conduction substrate are oppositely arranged in the thickness direction of the circuit board, and a circuit unit is arranged on the surface, facing the circuit board, of the heat conduction substrate; the circuit unit and the heat conduction substrate are insulated from each other. The circuit board is fixedly connected to the circuit unit; the circuit board is provided with at least one through groove which penetrates through the circuit board in the thickness direction of the circuit board. The power semiconductor device is located on one side, facing the circuit board, of the heat conduction substrate, the orthographic projection of the power semiconductor device on the heat conduction substrate is located in the range of the orthographic projection of the corresponding through groove on the heat conduction substrate, and the power semiconductor device is attached to and electrically connected with the circuit unit; the power semiconductor device is electrically connected with the circuit board through the circuit unit. The power supply device and the electronic equipment improve the heat dissipation problem of the power semiconductor device in the power supply device.

Description

Technical Field

[0001] The present application relates to the field of energy storage technology, and in particular to a power supply device and an electronic device. Background Art

[0002] Power semiconductors are widely used in power supply devices, such as power bricks, power adapters, and photovoltaic inverters. In recent years, as power supply devices have become increasingly compact and compact, the demand for power density and heat dissipation has increased. However, as power semiconductors are the primary heat-generating components in power supply devices, solving their heat dissipation problem has encountered a bottleneck. In other words, the heat dissipation of power semiconductors in power supply devices urgently needs to be improved. Summary of the Invention

[0003] Embodiments of the present application provide a power supply device and an electronic device, which improve the heat dissipation problem of power semiconductor devices in the power supply device.

[0004] In a first aspect, the present application provides a power supply device, which includes a circuit board, a thermally conductive substrate and one or more power semiconductor devices, wherein the circuit board and the thermally conductive substrate are arranged relative to each other along the thickness direction of the circuit board, and a circuit unit is provided on the surface of the thermally conductive substrate facing the circuit board, and the circuit unit and the thermally conductive substrate are insulated from each other; the circuit board is fixedly connected to the circuit unit; the circuit board has at least one through-slot, which passes through the circuit board along the thickness direction of the circuit board; each power semiconductor device is located on the side of the thermally conductive substrate facing the circuit board, and the orthographic projection of each power semiconductor device on the thermally conductive substrate is located within the range of the orthographic projection of the corresponding through-slot on the thermally conductive substrate, and each power semiconductor device is attached to and electrically connected to the circuit unit; each power semiconductor device is electrically connected to the circuit board through the circuit unit. In this solution, on the one hand, the main heat-generating components of the power supply device, that is, the power semiconductor devices, are directly connected to the circuit unit fixed on the surface of the heat-conducting substrate, shortening the heat dissipation path of the power semiconductor devices and enabling the power semiconductor devices to dissipate heat more quickly. On the other hand, no connector is required between the circuit board and the circuit unit. Compared with the situation where a connector is required, the cost is lower, the manufacturing process is simpler, and the manufacturing efficiency is higher. In addition, the size of the power supply device can be smaller in the thickness direction of the circuit board, so that the power supply device can be applied in a smaller space and is more versatile.

[0005] In one possible embodiment, the circuit unit includes multiple mutually insulated sub-circuit units, with each power semiconductor device corresponding to two sub-circuit units. Each power semiconductor device includes a control electrode, a first electrode, and a second electrode. The control electrode and the first electrode are electrically connected to the same sub-circuit unit and are electrically connected to the circuit board through the sub-circuit unit. The second electrode is electrically connected to another sub-circuit unit and is electrically connected to the circuit board through the sub-circuit unit.

[0006] In a possible embodiment, the sub-circuit unit includes a circuit layer, and the circuit layer extends in a plane parallel to the surface of the thermally conductive substrate to achieve electrical connection between corresponding electrodes and the circuit board.

[0007] In a possible embodiment, the power supply device includes a power mainboard, which is located on the side of the circuit board opposite to the thermal conductive substrate, and the control electrode, the first electrode, and the second electrode of at least one power semiconductor device among the one or more power semiconductor devices are electrically connected to the power mainboard through the circuit unit and the circuit board.

[0008] In a possible embodiment, the control electrode is a gate, the first electrode is a source, and the second electrode is a drain.

[0009] Furthermore, in one possible embodiment, the control electrode and first electrode of at least one of the one or more power semiconductor devices are electrically connected to the power mainboard via a circuit unit and a circuit board, while the second electrode is electrically connected to the power mainboard via a conductive block. In other words, the control electrode and source electrode are electrically connected to the power mainboard via the circuit unit and circuit board, while the drain electrode is electrically connected to the power mainboard via a conductive block. The drain electrode carries a relatively high current, and electrical connection of the drain electrode to the power mainboard via a conductive block facilitates rapid transmission of this high current.

[0010] In another possible embodiment, a power supply device includes a circuit board, a thermally conductive substrate, a power mainboard, and one or more power semiconductor devices. The circuit board and the thermally conductive substrate are arranged relative to each other along the thickness of the circuit board, with each power mainboard located on the side of the circuit board opposite the thermally conductive substrate. A circuit unit is fixedly mounted on the surface of the thermally conductive substrate facing the circuit board, and the circuit unit is insulated from the thermally conductive substrate. The circuit board has at least one through-slot extending through the circuit board along its thickness, with each through-slot corresponding to at least one power semiconductor device. The orthographic projection of each power semiconductor device on the thermally conductive substrate is located within the orthographic projection of the corresponding through-slot on the thermally conductive substrate, and each power semiconductor device is at least partially located within the corresponding through-slot. Each power semiconductor device is electrically connected to the circuit unit and to the circuit board through the circuit unit. Each power semiconductor device includes a gate, a source, and a drain. In each power semiconductor device, the gate and source are electrically connected to the power mainboard via the circuit board, and the drain is electrically connected to the power mainboard via a conductive block. The drain carries a relatively high current, and the electrical connection of the drain to the power mainboard via the conductive block facilitates the rapid transmission of this high current.

[0011] In a possible embodiment, the circuit board and the power mainboard are electrically connected via copper pillars or pins to simplify the connection between the circuit board and the power mainboard.

[0012] In one possible embodiment, an insulating thermally conductive layer is provided on the surface of the thermally conductive substrate facing the circuit board, and the circuit unit is disposed on the insulating thermally conductive layer. The provision of the insulating thermally conductive layer not only provides insulation between the circuit unit and the thermally conductive substrate, but also facilitates heat transfer between each power semiconductor device and the thermally conductive substrate, thereby improving the heat dissipation effect of each power semiconductor device.

[0013] In the second aspect, an embodiment of the present application provides an electronic device, which includes a metal housing and a power supply device provided by the technical solution of the first aspect. The metal housing has a receiving cavity, the power supply device is fixed in the receiving cavity of the metal housing, and the thermally conductive substrate is thermally connected to the metal housing. In this solution, on the one hand, the main heat-generating components of the power supply device, that is, each power semiconductor device, are directly connected to the circuit unit fixed on the surface of the thermally conductive substrate, shortening the heat dissipation path of each power semiconductor device and enabling each power semiconductor device to dissipate heat more quickly; on the other hand, no connector is required between the circuit board and the thermally conductive substrate. Compared with the case where a connector connection is required, the cost is lower, the manufacturing process is simpler, and the manufacturing efficiency is higher. In addition, the size of the power supply device can be smaller in the thickness direction of the circuit board, so that the power supply device occupies less space, which is conducive to reducing the volume of the electronic device. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] Figure 1 is a cross-sectional view of a power supply device;

[0015] Figure 2 A cross-sectional view of a power supply device provided in an embodiment of the present application;

[0016] Figure 3 A cross-sectional view of a power supply device provided in this application;

[0017] Figure 4 A schematic diagram of the structure of a power semiconductor device in a power supply device provided in this application;

[0018] Figure 5 A schematic diagram of a power supply device provided in this application;

[0019] Figure 6 A schematic diagram of a power supply device provided in this application;

[0020] Figure 7 A schematic diagram of a partial structure of an electronic device provided in this application;

[0021] Figure 8 A schematic diagram of the partial structure of another electronic device provided in this application. DETAILED DESCRIPTION

[0022] Power supply units, such as power adapters, power bricks, or photovoltaic inverters, are essential components of many electronic devices. As the power supply for electronic devices, power supply units provide the foundation for their operation.

[0023] Figure 1 is a cross-sectional view of a power supply device, such as Figure 1 As shown, the power supply device includes a power mainboard 5', a circuit board 1', a power semiconductor device 3' and a metal substrate 2'. Specifically, the circuit board 1' is fixedly arranged on the surface of the metal substrate 2', and the power mainboard 5' is located on the side of the circuit board 1' opposite to the metal substrate 2', and there is a gap between the power mainboard 5' and the circuit board 1'. The power semiconductor device 3' is located between the circuit board 1' and the power mainboard 5', and is electrically connected to the circuit board 1' to achieve signal transmission between the power semiconductor device 3' and the circuit board 1'. The circuit board 1' and the power mainboard 5' are electrically connected using customized connectors such as copper pillars 4' or pins to achieve signal transmission. In this solution, although the metal substrate 2' is used to dissipate heat, which can improve the heat dissipation of the power semiconductor device 3' to a certain extent, the internal heat conduction of the circuit board 1' is difficult, so that the heat dissipation of the power semiconductor device 3' is hindered and the heat dissipation is not ideal.

[0024] Based on this, the embodiments of the present application provide a power supply device and an electronic device to solve the above problems. In order to make the purpose, technical solution and advantages of the present application clearer, the present application will be further described in detail below with reference to the accompanying drawings.

[0025] The terms used in the following embodiments are only for the purpose of describing specific embodiments and are not intended to limit the present application. As used in the specification and appended claims of this application, the singular expressions "a", "an", "said", "above", "the", and "this" are intended to also include expressions such as "one or more", unless the context clearly indicates otherwise.

[0026] References to "one embodiment" or "some embodiments" in this specification mean that a particular feature, structure, or characteristic described in conjunction with that embodiment is included in one or more embodiments of the present application. Thus, phrases such as "in one embodiment," "in some embodiments," "in other embodiments," and "in yet other embodiments" appearing in various places in this specification do not necessarily refer to the same embodiment, but rather mean "one or more but not all embodiments," unless otherwise specifically emphasized. The terms "including," "comprising," "having," and variations thereof mean "including but not limited to," unless otherwise specifically emphasized.

[0027] Figure 2This is a cross-sectional view of a power supply device 100 provided in an embodiment of the present application. Figure 2 As shown, a power supply device 100 provided in an embodiment of the present application includes a circuit board 1, a thermally conductive substrate 2 and one or more power semiconductor devices 3. Specifically, the circuit board 1 and the thermally conductive substrate 2 are arranged relative to each other along the thickness direction A of the circuit board 1. Exemplarily, the thermally conductive substrate 2 can be a metal substrate, such as an aluminum plate or a copper plate. It should be understood that the thermally conductive substrate 2 is not limited to an aluminum plate or a copper plate, and can also be a plate made of other metal materials. The examples here are not exhaustive. Furthermore, a circuit unit 4 is provided on the surface of the thermally conductive substrate 2 facing the circuit board 1. It is not difficult to understand that the circuit unit 4 and the thermally conductive substrate 2 are insulated from each other. For example, an insulating thermally conductive layer 7 is provided on the surface of the thermally conductive substrate 2 facing the circuit board 1, and the circuit unit 4 is provided on the insulating thermally conductive layer 7 to be insulated from the thermally conductive substrate 2. Exemplarily, the insulating thermally conductive layer 7 can be a film or a semi-cured sheet. Next, please continue to refer to Figure 2 The circuit board 1 is fixedly connected to the circuit unit 4. The circuit board 1 has at least one through-slot 11, which passes through the circuit board 1 along the thickness direction A of the circuit board 1. Each through-slot 11 corresponds to at least one power semiconductor device 3. In other words, each through-slot 11 can correspond to one, two or more power semiconductor devices 3. Each power semiconductor device 3 is located on the side of the thermally conductive substrate 2 facing the circuit board 1, and each power semiconductor device 3 is attached to and electrically connected to the circuit unit 4, and is electrically connected to the circuit board 1 through the circuit unit 4. Furthermore, the orthographic projection of each power semiconductor device 3 on the thermally conductive substrate 2 is located within the range of the orthographic projection of the corresponding through-slot 11 on the thermally conductive substrate 2. In this solution, on the one hand, the main heat-generating components of the power supply device 100, that is, each power semiconductor device 3, are directly connected to the circuit unit 4 fixed on the surface of the heat-conducting substrate 2, shortening the heat dissipation path of each power semiconductor device 3, and enabling each power semiconductor device 3 to dissipate heat more quickly; on the other hand, no connector is required between the circuit board 1 and the circuit unit 4. Compared with the situation where a connector connection is required, the cost is lower, the manufacturing process is simpler, and the manufacturing efficiency is higher. In addition, the size of the power supply device 100 can be smaller in the thickness direction A of the circuit board 1, so that the power supply device 100 can be applied in a smaller space and has greater versatility.

[0028] In a specific implementation, the size of the power semiconductor device 3 in the thickness direction A of the circuit board 1 can be larger than the size of the through-slot 11 in the thickness direction of the circuit board 1, that is, on the side opposite to the thermally conductive substrate 2, the power semiconductor device 3 is exposed on the circuit board 1; the size of the power semiconductor device 3 in the thickness direction of the circuit board 1 can also be equal to the size of the through-slot 11 in the thickness direction of the circuit board 1, that is, on the side opposite to the thermally conductive substrate 2, the power semiconductor device 3 is flush with the circuit board 1; the size of the power semiconductor device 3 in the thickness direction of the circuit board 1 can also be smaller than the size of the through-slot 11 in the thickness direction of the circuit board 1, that is, on the side opposite to the thermally conductive substrate 2, the surface of the circuit board 1 exceeds the surface of the power semiconductor device 3, that is, Figure 2 The situation shown in .

[0029] It is worth noting that the circuit board 1 mentioned in this application includes but is not limited to multilayer printed circuit boards (PCBs), and the power semiconductor devices 3 include but are not limited to metal-oxide-semiconductor field-effect transistors (MOSFETs). The specific number of power semiconductor devices 3 is set according to actual needs.

[0030] Please continue to refer to Figure 2 In some embodiments, the circuit unit 4 includes multiple mutually insulated sub-circuit units 41, with each power semiconductor device 3 corresponding to two sub-circuit units 41. Exemplarily, each power semiconductor device 3 includes a control electrode 31, a first electrode, and a second electrode 32. The control electrode 31 and the first electrode are electrically connected to the same sub-circuit unit 41, and are electrically connected to the circuit board 1 through this sub-circuit unit 41. The second electrode 32 is electrically connected to another sub-circuit unit 41, and is electrically connected to the circuit board 1 through this sub-circuit unit 41. Furthermore, the sub-circuit unit 41 includes a circuit layer, which is prepared by etching on the insulating thermally conductive layer 7 and extends in a plane parallel to the surface of the thermally conductive substrate 2 to achieve electrical connection between the corresponding electrodes of each power semiconductor device 3 and the circuit board 1. In other words, the signal of each power semiconductor device 3 is transmitted through the corresponding circuit layer in a plane parallel to the surface of the thermally conductive substrate 2, and then directly transmitted to the circuit board 1 through the circuit layer. The control device and surrounding circuitry of each power semiconductor device 3 can be placed on the circuit board 1. Exemplarily, the circuit layer can be made of copper.

[0031] Figure 3 FIG1 shows a cross-sectional view of a power supply device 100 provided by the present application. Figure 3As shown, based on the above solution, the power supply device 100 includes a power mainboard 5, which is located on the side of the circuit board 1 opposite to the heat-conducting substrate 2; the control electrode 31, the first electrode and the second electrode 32 of at least one power semiconductor device 3 among the one or more power semiconductor devices are electrically connected to the power mainboard 5 through the circuit unit 4 and the circuit board 1. For details, please continue to refer to Figure 3 , Figure 3 Two semiconductor power devices are shown in the figure, and one of the semiconductor power devices is used as an example for description. The control electrode 31 and the first electrode of the semiconductor power device are electrically connected to the corresponding sub-circuit unit 41 (e.g., by welding), and are electrically connected to a via or buried copper in the circuit board 1 through the sub-circuit unit 41 (e.g., by welding). The second electrode 32 of the semiconductor power device is electrically connected to the corresponding sub-circuit unit 41 (e.g., by welding), and is electrically connected to a via or buried copper in the circuit board 1 through the sub-circuit unit 41 (e.g., by welding).

[0032] For example, Figure 4 As shown, the control electrode 31 of the power semiconductor device 3 is the gate 33, the first electrode is the source 34, and the second electrode 32 is the drain 35. It is easy to understand that Figure 4 The power semiconductor device in the embodiment is only one possible implementation method, and does not mean that the power semiconductor device in this application can only be Figure 4 In this application, the specific structure of the power semiconductor device can be set according to actual needs.

[0033] Figure 5 FIG. 1 shows a schematic diagram of a power supply device 100 provided in the present application, and it is worth noting that: Figure 5 The power supply device 100 shown is Figure 3 Compared with the power supply device 100 shown in FIG, the connection method between the second electrode 32 and the power mainboard 5 has changed. Figure 5 In some embodiments, the control electrode 31 and the first electrode in at least one power semiconductor device 3 are electrically connected to the power main board 5 through the circuit unit 4 and the circuit board 1. Specifically, the control electrode 31 and the first electrode are connected to the circuit board 4 through the corresponding sub-circuit unit 41, and then electrically connected to the power main board 5 through the circuit board 4. The second electrode 32 is electrically connected to the power main board 5 through the conductive block 6. That is, the control electrode 31 and the source electrode 34 are electrically connected to the power main board 5 through the circuit unit 4 and the circuit board 1, and the drain electrode 35 is electrically connected to the power main board 5 through the conductive block 6. The current of the drain electrode 35 is relatively large, and the electrical connection of the drain electrode 35 to the power main board 5 through the conductive block 6 is conducive to the rapid transmission of the large current. It is worth noting that the shape and material of the conductive block 6 are not limited in this application. For example, the material of the conductive block 6 can be copper or aluminum, and the shape of the conductive block 6 can be cylindrical, etc.

[0034] Please continue to refer to Figure 5 In some embodiments, the power supply device 100 includes a power mainboard 5, a circuit board 1, a thermally conductive substrate 2 and at least one power semiconductor device 3. Specifically, the circuit board 1 and the thermally conductive substrate 2 are arranged relative to each other along the thickness direction A of the circuit board 1, and the power mainboard 5 is located on the side of the circuit board 1 opposite to the thermally conductive substrate 2. Similarly, the thermally conductive substrate 2 can be a metal substrate, such as an aluminum plate or a copper plate. The thermally conductive substrate 2 is not limited to aluminum plates and copper plates, but can also be a plate made of other metal materials, which are not exhaustive. Furthermore, a circuit unit 4 is fixedly provided on the surface of the thermally conductive substrate 2 facing the circuit board 1, and the circuit unit 4 is insulated from the thermally conductive substrate 2. For example, an insulating thermally conductive layer 7 is provided on the surface of the thermally conductive substrate 2 facing the circuit board 1, and the circuit unit 4 is arranged on the insulating thermally conductive layer 7 to be insulated from the thermally conductive substrate 2. Next, please continue to refer to Figure 5 The circuit board 1 has at least one through-slot 11, which passes through the circuit board 1 along the thickness direction A of the circuit board 1. Each through-slot 11 corresponds to at least one power semiconductor device 3. Specifically, the orthographic projection of each power semiconductor device 3 on the thermally conductive substrate 2 is located within the range of the orthographic projection of the corresponding through-slot 11 on the thermally conductive substrate 2, and each power semiconductor device 3 is at least partially located in the corresponding through-slot 11. Furthermore, each power semiconductor device 3 includes a gate 33, a source 34, and a drain 35. In each power semiconductor device 3, the gate 33 and the source 34 are electrically connected to the power main board 5 through the circuit board 1, and the drain 35 is electrically connected to the power main board 5 through the conductive block 6. The current of the drain 35 is relatively large, and the electrical connection of the drain 35 to the power main board 5 through the conductive block 6 is conducive to the rapid transmission of this large current. Similarly, the shape and material of the conductive block 6 are not limited in this application. For example, the material of the conductive block 6 can be copper or aluminum, and the shape of the conductive block 6 can be cylindrical, etc.

[0035] Please continue to refer to Figure 5 In this solution, the circuit unit 4 includes a plurality of mutually insulated sub-circuit units 41, with each power semiconductor device 3 corresponding to two sub-circuit units 41. Exemplarily, the gate 33 and the source 34 are electrically connected to the same sub-circuit unit 41, and are electrically connected to the circuit board 1 through the sub-circuit unit 41. The drain 35 is electrically connected to another sub-circuit unit 41, and is electrically connected to the power main board 5 through the sub-circuit unit 41 and the conductive block 6. Furthermore, the sub-circuit unit 41 includes a circuit layer, which extends in a plane parallel to the surface of the thermally conductive substrate 2 to achieve electrical connection between the corresponding electrodes of the power semiconductor device 3 and the corresponding circuit board 1 or power main board 5.

[0036] It is easy to understand that in some embodiments, the control electrodes 31 and first electrodes of some of the power semiconductor devices 3 among the multiple power semiconductor devices may be electrically connected to the power mainboard 5 via the circuit unit 4 and the circuit board 1, and the second electrodes 32 may be electrically connected to the power mainboard 5 via the conductive block 6. The control electrodes 31, first electrodes, and second electrodes 32 of another portion of the power semiconductor devices 3 may all be electrically connected to the power mainboard 5 via the circuit unit 4 and the circuit board 1.

[0037] When specifically implementing the connection between the circuit board 1 and the power mainboard 5 , in some embodiments, the circuit board 1 and the power mainboard 5 are electrically connected via copper pillars or pins.

[0038] Figure 6 FIG1 shows a schematic diagram of a power supply device 100 provided by the present application. It is easy to understand that, as Figure 6 As shown, the power supply device 100 further includes a transformer unit 401, a control chip 402, a capacitor 403, a resistor 404, a filter circuit unit 81, an electromagnetic compatibility (EMC) circuit unit 82, an input connector 83, and an output connector 84. For example, the transformer unit 401, the control chip 402, the capacitor 403, and the resistor 404 are all electrically connected to the circuit board 1 and, together with the thermally conductive substrate 2, the circuit board 1, the circuit unit 4, and the power semiconductor devices 3, constitute the power conversion module 400 of the power supply device. The filter circuit unit 81, the EMC circuit unit 82, the input connector 83, and the output connector 84 are all electrically connected to the power motherboard 5.

[0039] Figure 7 shows a partial structural diagram of an electronic device provided by the present application, Figure 8 FIG. 1 shows a partial structural diagram of another electronic device provided by the present application. Figure 7 and Figure 8As shown, the present application provides an electronic device comprising a metal housing 200 and the power supply device 100 described above. The metal housing 200 has a receiving cavity. The power supply device 100 is fixed in the receiving cavity of the metal housing 200. The heat-conducting substrate 2 in the power supply device 100 is thermally connected to the metal housing 200. That is, the heat-conducting substrate 2 of the power supply device 100 is fixedly connected to the metal housing 200, and heat can be conducted between the heat-conducting substrate 2 and the metal housing 200. In this solution, on the one hand, the main heat-generating components of the power supply device 100, that is, each power semiconductor device 3, are directly connected to the circuit unit 4 fixed to the surface of the heat-conducting substrate 2, shortening the heat dissipation path of each power semiconductor device 3 and enabling each power semiconductor device 3 to dissipate heat more quickly. On the other hand, no connector is required between the circuit board 1 and the circuit unit. Compared with the case where a connector is required, the cost is lower, the manufacturing process is simpler, and the manufacturing efficiency is higher. In addition, the size of the power supply device 100 can be smaller in the thickness direction of the circuit board 1, so that the space occupied by the power supply device 100 is smaller, which is conducive to reducing the volume of the electronic device.

[0040] In some embodiments, a heat-conducting layer 300 may be provided between the heat-conducting substrate 2 of the power supply device 100 and the metal housing 200 of the electronic device to improve the heat dissipation efficiency of each power semiconductor device 3 .

[0041] Obviously, those skilled in the art may make various changes and modifications to this application without departing from the spirit and scope of this application. Thus, if these modifications and variations of this application fall within the scope of the claims of this application and their equivalents, this application is intended to include these modifications and variations.

Claims

1. A power supply device, characterized in that: The invention comprises a circuit board, a heat-conducting substrate, and one or more power semiconductor devices, wherein the circuit board and the heat-conducting substrate are arranged opposite to each other along the thickness direction of the circuit board, a circuit unit is provided on the surface of the heat-conducting substrate facing the circuit board, and the circuit unit and the heat-conducting substrate are insulated from each other; and the circuit board is fixedly connected to the circuit unit; The circuit board has at least one through-slot, which penetrates the circuit board along the thickness direction of the circuit board; each of the power semiconductor devices is located on the side of the thermally conductive substrate facing the circuit board, and the orthographic projection of each of the power semiconductor devices on the thermally conductive substrate is located within the range of the orthographic projection of the corresponding through-slot on the thermally conductive substrate, each of the power semiconductor devices is attached to and electrically connected to the circuit unit; each of the power semiconductor devices is electrically connected to the circuit board through the circuit unit.

2. The power supply device according to claim 1, wherein: The circuit unit includes a plurality of sub-circuit units insulated from each other, and each power semiconductor device corresponds to two sub-circuit units; Each of the power semiconductor devices includes a control electrode, a first electrode, and a second electrode. The control electrode and the first electrode are electrically connected to the same sub-circuit unit and are electrically connected to the circuit board through the sub-circuit unit; the second electrode is electrically connected to another sub-circuit unit and is electrically connected to the circuit board through the sub-circuit unit.

3. The power supply device according to claim 2, wherein: The sub-circuit unit includes a circuit layer, which extends in a plane parallel to the surface of the heat-conducting substrate to achieve electrical connection between corresponding electrodes and the circuit board.

4. The power supply device according to claim 2 or 3, wherein: It includes a power mainboard, which is located on the side of the circuit board opposite to the heat-conducting substrate; The control electrode, the first electrode, and the second electrode of at least one of the one or more power semiconductor devices are electrically connected to the power main board through the circuit unit and the circuit board.

5. The power supply device according to claim 4, wherein: The control electrode is a gate electrode, the first electrode is a source electrode, and the second electrode is a drain electrode.

6. The power supply device according to claim 5, wherein: The control electrode and the first electrode of at least one of the one or more power semiconductor devices are electrically connected to the power mainboard through the circuit unit and the circuit board, and the second electrode is electrically connected to the power mainboard through a conductive block.

7. The power supply device according to claim 1, wherein: It includes a power mainboard, which is located on the side of the circuit board opposite to the thermally conductive substrate; each power semiconductor device includes a gate, a source and a drain; in each power semiconductor device, the gate and the source are electrically connected to the power mainboard through the circuit board, and the drain is electrically connected to the power mainboard through a conductive block.

8. The power supply device according to any one of claims 4 to 7, wherein: The circuit board is electrically connected to the power mainboard via copper pillars or pins.

9. The power supply device according to any one of claims 1 to 8, wherein: An insulating heat-conducting layer is provided on a surface of the heat-conducting substrate facing the circuit board, and the circuit unit is arranged on the insulating heat-conducting layer.

10. An electronic device, characterized in that: The invention comprises a metal shell and the power supply device according to any one of claims 1 to 9, wherein the metal shell has a receiving cavity, the power supply device is fixed in the receiving cavity of the metal shell, and the heat-conducting substrate is heat-conductingly connected to the metal shell.

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