Preparation process of high-hardness anti-scraping anti-static nano film layer

Abstract

The invention discloses a preparation process of a high-hardness anti-scraping antistatic nano film layer. The preparation process comprises the following steps: S1, preparing and mounting a target material: adopting a Si / In / Sn ternary alloy target material; the target material is fixed in a cathode chamber of vacuum magnetron sputtering equipment, and a high-intensity magnetic field is additionally arranged on the back face of the target material; s2, sputtering film formation: creating a vacuum environment through vacuum magnetron sputtering equipment, applying high voltage to the target material, and introducing high-purity Ar gas at the same time; ar gas is ionized and then bombards the target material, so that the target material forms a nano-film on the surface of the product; and S3, secondary crystallization: after a thin film is formed on the surface of the product, transferring the product to an ICP reaction source, introducing high-purity O2 or high-purity N2 to react with the nano thin film on the surface of the product, and carrying out secondary crystallization to finally obtain the nano thin film meeting the specification. According to the invention, the impedance stability of the product is 5E6-5E7 omega / sq, the transmittance of the film layer is 97T%-98T%, and the thickness is 19-21nm; and the pencil hardness 9H standard is reached.

Description

Technical Field

[0001] The invention relates to the technical field of nano film preparation, in particular to a process for preparing a high-hardness anti-scratch and anti-static nano film. Background Art

[0002] With the development of high-end manufacturing industries such as smart terminal devices, new energy batteries, and aerospace, the demand for functional nanofilms is growing. Although traditional nanofilm preparation processes such as physical vapor deposition (PVD), chemical vapor deposition (CVD), and sol-gel methods can achieve certain film properties, they still have significant shortcomings in terms of film uniformity, density, conductivity, and antistatic properties.

[0003] Especially in high-precision applications, such as mobile phone covers, touch screens, optoelectronic devices and other fields, existing technologies are difficult to meet the simultaneous requirements of multiple indicators such as high strength, low resistivity, high transmittance, and high adhesion.

[0004] In the field of anti-static interference for buttons and monitoring chips in wearable consumer products, the existing conductive film layer has high conductivity, which interferes with product signal communication. The hardness and scratch resistance of the film and coating nanomaterials are insufficient. Therefore, we propose a preparation process for a high-hardness, scratch-resistant and anti-static nanofilm layer. Summary of the Invention

[0005] The purpose of the present invention is to provide a process for preparing a high-hardness anti-scratch anti-static nanofilm layer to solve the problems in the prior art.

[0006] To achieve the above object, the present invention provides the following technical solution: a process for preparing a high-hardness anti-scratch anti-static nanofilm layer, comprising the following steps:

[0007] S1. Target preparation and installation: Use Si / In / Sn ternary alloy target; fix the target in the cathode chamber of the vacuum magnetron sputtering equipment, and install a strong magnetic field on the back of the target;

[0008] S2. Sputtering film formation: A vacuum environment is created by using vacuum magnetron sputtering equipment, high voltage is applied to the target material, and high-purity Ar gas is introduced at the same time; the Ar gas is ionized and bombards the target material, causing the target material to form a nano-thin film on the surface of the product;

[0009] S3. Secondary crystallization: After a thin film is formed on the surface of the product, it is transferred to the ICP reaction source and high-purity O2 or high-purity N2 is introduced to react with the nano-film on the surface of the product and undergo secondary crystallization, ultimately obtaining a nano-film that meets the specifications.

[0010] Preferably, the vacuum pressure of the film forming process in S2 is 0.5-0.6 Pa.

[0011] Preferably, the flow rate of the inert Ar gas introduced into the target in S2 is 600 cssm, and the power applied to the target is 6 kW.

[0012] Preferably, the target power supply type in S2 adopts a medium frequency power supply with a power frequency of 35KHZ-45KHZ and a voltage of 400V-600V.

[0013] Preferably, the intensity of the strong magnetic field on the back of the target is 600-700Gs.

[0014] Preferably, the flow rate of the inert gas Ar introduced into the ICP is 300 sccm, the flow rate of the oxygen is 50 sccm, the flow rate of the nitrogen is 30 sccm, and the ICP applied power is 3 KW.

[0015] Preferably, the film forming time is 133s-140s; and the film thickness is 20nm±2nm.

[0016] Compared with the prior art, the present invention has the following beneficial effects:

[0017] 1. The product impedance stability is 5E6-5E7Ω / sq, the film transmittance is 97T%-98T%, and the thickness is 19-21nm. This application realizes the preparation of nano-films with high hardness, scratch resistance, anti-static and good optical properties.

[0018] 2. The prepared nanofilm can reach the pencil hardness standard of 9H, showing excellent wear resistance and scratch resistance. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] The accompanying drawings are used to provide a further understanding of the present invention and constitute a part of the specification. Together with the embodiments of the present invention, they are used to explain the present invention and do not constitute a limitation of the present invention. In the accompanying drawings:

[0020] Figure 1 It is a flow chart of the present invention. DETAILED DESCRIPTION

[0021] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of the present invention. Therefore, the following detailed description of the embodiments of the present invention provided in the drawings is not intended to limit the scope of the invention claimed for protection, but merely represents selected embodiments of the present invention.

[0022] See also Figure 1In an embodiment of the present invention, a process for preparing a high-hardness anti-scratch anti-static nanofilm layer comprises the following steps:

[0023] S1. Target preparation and installation: Use Si / In / Sn ternary alloy target; fix the target in the cathode chamber of the vacuum magnetron sputtering equipment, and install a strong magnetic field on the back of the target;

[0024] S2. Sputtering film formation: A vacuum environment is created by using vacuum magnetron sputtering equipment, high voltage is applied to the target material, and high-purity Ar gas is introduced at the same time; the Ar gas is ionized and bombards the target material, causing the target material to form a nano-thin film on the surface of the product;

[0025] S3. Secondary Crystallization: After a thin film forms on the product surface, it is transferred to an ICP reaction source, where high-purity O2 or N2 is introduced, causing it to react with the nanofilm on the product surface and undergo secondary crystallization, ultimately yielding a nanofilm that meets specifications. The ICP coil generates a high-frequency alternating electromagnetic field, exciting the gas to form a high-density plasma, triggering an in-situ chemical reaction between the film and the gas. This process promotes the recombination of grains within the film, achieving secondary crystallization and improving the film's density, hardness, and functionality.

[0026] The vacuum pressure of the film forming process in S2 is 0.5-0.6 Pa.

[0027] The flow rate of inert Ar gas introduced into the target in S2 is 600 cssm, and the power applied to the target is 6 kW.

[0028] The target power supply type in S2 adopts medium frequency power supply with a power frequency of 35KHZ-45KHZ and a voltage of 400V-600V. The strong magnetic field strength on the back of the target is 600-700Gs.

[0029] The flow rate of the inert gas Ar introduced into the ICP is 300 sccm, the flow rate of the oxygen is 50 sccm, the flow rate of the nitrogen is 30 sccm, and the power applied to the ICP is 3 KW.

[0030] The film forming time is 133s-140s; the film thickness is 20nm±2nm.

[0031] Environmental testing:

[0032]

[0033]

[0034] The working principle of the present invention is as follows: S1, target material preparation and installation: Si / In / Sn ternary alloy target material is used; the target material is fixed in the cathode chamber of the vacuum magnetron sputtering equipment, and a strong magnetic field is installed on the back of the target material; S2, sputtering film formation: a vacuum environment is created by the vacuum magnetron sputtering equipment, a high voltage is applied to the target material, and high-purity Ar gas is introduced at the same time; the Ar gas is ionized and bombards the target material, so that the target material forms a nano-thin film on the surface of the product; S3, secondary crystallization: after the thin film is formed on the surface of the product, it is transferred to an ICP reaction source, and high-purity O2 or high-purity N2 is introduced to react with the nano-thin film on the surface of the product and secondary crystallize, finally obtaining a nano-thin film that meets the specifications; the product impedance stability is 5E6-5E7Ω / sq, the film transmittance is 97T%-98T%, and the thickness is 19-21nm; the prepared nano-thin film can meet the pencil hardness standard of 9H, showing excellent wear resistance and scratch resistance.

[0035] Finally, it should be noted that the above descriptions are merely preferred embodiments of the present invention and are not intended to limit the present invention. Although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art will be able to modify the technical solutions described in the aforementioned embodiments or substitute equivalents for some of the technical features. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of the present invention shall be included within the scope of protection of the present invention.

Claims

1. A process for preparing a high-hardness anti-scratch anti-static nanofilm layer, characterized in that: The following steps are involved: S1. Target preparation and installation: Use Si / In / Sn ternary alloy target; fix the target in the cathode chamber of the vacuum magnetron sputtering equipment, and install a strong magnetic field on the back of the target; S2. Sputtering film formation: A vacuum environment is created by using vacuum magnetron sputtering equipment, high voltage is applied to the target material, and high-purity Ar gas is introduced at the same time; the Ar gas is ionized and bombards the target material, causing the target material to form a nano-thin film on the surface of the product; S3. Secondary crystallization: After a thin film is formed on the surface of the product, it is transferred to the ICP reaction source and high-purity O2 or high-purity N2 is introduced to react with the nano-film on the surface of the product and undergo secondary crystallization, ultimately obtaining a nano-film that meets the specifications.

2. The process for preparing a high-hardness anti-scratch anti-static nanofilm layer according to claim 1, characterized in that: The vacuum pressure of the film forming process in S2 is 0.5-0.6 Pa.

3. The process for preparing a high-hardness anti-scratch anti-static nanofilm layer according to claim 1, characterized in that: The flow rate of inert Ar gas introduced into the target in S2 is 600 cssm, and the power applied to the target is 6 kW.

4. The process for preparing a high-hardness anti-scratch anti-static nanofilm layer according to claim 1, characterized in that: The target power supply type in the S2 adopts a medium frequency power supply with a power frequency of 35KHZ-45KHZ and a voltage of 400V-600V.

5. The process for preparing a high-hardness anti-scratch anti-static nanofilm layer according to claim 1, characterized in that: The intensity of the strong magnetic field on the back of the target material is 600-700Gs.

6. The process for preparing a high-hardness anti-scratch anti-static nanofilm layer according to claim 1, characterized in that: The flow rate of the inert gas Ar introduced into the ICP is 300 sccm, the flow rate of oxygen is 50 sccm, the flow rate of nitrogen is 30 sccm, and the power applied by the ICP is 3 KW.

7. The process for preparing a high-hardness anti-scratch anti-static nanofilm layer according to claim 1, characterized in that: The film forming time is 133s-140s; the film thickness is 20nm±2nm.

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