Air inlet assembly and semiconductor process equipment

Abstract

The invention discloses an air inlet assembly and semiconductor process equipment, and relates to the field of semiconductors. The air inlet assembly comprises an air inlet ring structure and a baffle ring structure, the air inlet ring structure comprises an annular main body part, and an annular groove is formed in the end face of the main body part. An air inlet channel communicated with the groove is also arranged in the main body part; the baffle ring structure comprises an annular first baffle and an annular second baffle; the first baffle is fixed on the main body part; the second baffle is located on the side, facing the groove, of the first baffle and divides the space in the groove into a first annular cavity and a second annular cavity. A plurality of first air uniformizing holes are formed in the second baffle, and the first annular cavity and the second annular cavity are communicated through the first air uniformizing holes; the air inlet channel is communicated with the first annular cavity, the air inlet ring structure is further provided with a plurality of second air uniformizing holes, and the second annular cavity is communicated with the reaction space through the second air uniformizing holes. The problem that gas distribution of current equipment is not uniform can be solved.

Description

Technical Field

[0001] The present application belongs to the field of semiconductor technology, and specifically relates to an air intake component and semiconductor process equipment. Background Art

[0002] The ultraviolet curing process (i.e., UV Cure process) is mainly used for the curing treatment of copper interconnect dielectric films. It can effectively reduce the dielectric constant k value of the film, improve the mechanical properties of the film, improve chip power consumption and signal crosstalk, and increase the operating speed of the chip. It is widely used in 40nm and below 12-inch logic fields and high-end process storage fields. This equipment process is an indispensable part of high-end advanced chip processing and manufacturing.

[0003] The main working principle of the UV curing process is: the ultraviolet light emitted by the UV light source acts on the wafer surface in the process chamber through the observation window and the uniform air window. At the same time, the temperature in the process chamber is controlled and gas is introduced into the process chamber to cure the thin film on the wafer surface.

[0004] However, some current UV curing process equipment takes in air from the side, resulting in uneven distribution of gas after entering the process chamber. That is, the gas pressure is higher in the area close to the air inlet, and more gas enters the process chamber from this area, while the gas pressure is lower in the area far from the air inlet, and less gas enters the process chamber from this area, resulting in uneven gas distribution on the wafer surface, affecting the thickness uniformity of the film layer on the wafer surface after curing. Summary of the Invention

[0005] The purpose of the embodiments of the present application is to provide an air intake assembly and semiconductor process equipment that can solve problems such as uneven gas distribution in current equipment.

[0006] In order to solve the above technical problems, this application is implemented as follows:

[0007] An embodiment of the present application provides an air intake assembly for supplying gas to a process chamber, wherein the process chamber has a reaction space, and the air intake assembly is configured to be disposed above the reaction space, wherein the air intake assembly includes: an air intake ring structure and a baffle ring structure;

[0008] The air intake ring structure includes an annular main body, an annular groove is provided on the end surface of the main body facing the reaction space; an air intake channel is also provided in the main body and communicates with the groove, and the air intake channel is used to receive gas and transmit the received gas to the groove;

[0009] The retaining ring structure includes an annular first baffle and an annular second baffle; the first baffle is fixed to the main body and is used to close the opening of the groove; the second baffle is located on the side of the first baffle facing the groove, and the second baffle is used to divide the space in the groove into a first annular cavity and a second annular cavity arranged in sequence along the radial direction of the retaining ring structure; the second baffle is provided with a plurality of first uniform air holes arranged along the circumference of the second baffle, and the first annular cavity and the second annular cavity are connected through the plurality of first uniform air holes;

[0010] The first annular cavity surrounds the second annular cavity, the air inlet channel is connected to the first annular cavity, and the air inlet ring structure is further provided with a plurality of second air uniforming holes penetrating the inner circumferential wall of the groove, and the second annular cavity is connected to the reaction space through the plurality of second air uniforming holes.

[0011] The present application also provides a semiconductor process equipment, comprising: a light source assembly, a process chamber, and the above-mentioned air intake assembly;

[0012] The air inlet assembly is arranged at the top of the process chamber and is connected to the process chamber through a plurality of the second air-uniform holes;

[0013] The light source assembly is arranged on the top of the air inlet assembly and is used for providing light into the process chamber through the air inlet assembly.

[0014] In an embodiment of the present application, the space in the groove is divided into a first annular cavity and a second annular cavity by a second baffle, the air inlet channel is connected to the first annular cavity, the first annular cavity and the second annular cavity are connected through multiple first uniform air holes, and the second annular cavity and the reaction space are connected through multiple second uniform air holes. In this way, after the process gas enters the first annular cavity through the air inlet channel, it can first diffuse in the first annular cavity to expand the distribution space of the process gas, and then enter the second annular cavity through multiple first uniform air holes, and perform secondary diffusion in the second annular cavity, so that the process gas can diffuse more fully, and finally enter the reaction space through multiple second uniform air holes and diffuse in the reaction space, so that the process gas can be more evenly distributed in each area after entering the reaction space, thereby making the gas distribution on the wafer surface more uniform, improving the uniformity of the film thickness on the wafer surface, and improving product quality. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] Figure 1 This is a schematic diagram of the assembly of the air intake assembly, light source assembly, and chamber cover disclosed in an embodiment of the present application;

[0016] Figure 2 This is a disassembled schematic diagram of the air intake assembly and the light source assembly disclosed in the embodiment of the present application;

[0017] Figure 3A partial schematic diagram of the air intake assembly and the light source assembly disclosed in the embodiment of the present application;

[0018] Figure 4 This is a schematic structural diagram of the air intake assembly disclosed in an embodiment of the present application;

[0019] Figure 5 This is a schematic structural diagram of the intake ring structure disclosed in an embodiment of the present application;

[0020] Figure 6 A schematic structural diagram of the retaining ring structure disclosed in an embodiment of the present application;

[0021] Figure 7 A schematic structural diagram of a semiconductor process equipment disclosed in an embodiment of the present application;

[0022] Figure 8 This is an airflow distribution diagram using a single annular channel in the related art;

[0023] Figure 9 This is an airflow distribution diagram using a double-layer air uniformity method in an embodiment of the present application.

[0024] Description of reference numerals:

[0025] 100-air intake assembly;

[0026] 110 - Intake ring structure; 111 - Main body; 111a - Ring wall; 111b - First annular protrusion; 111c - Second annular protrusion; 1111 - Groove; 1111a - First annular cavity; 1111b - Second annular cavity; 1112 - Intake channel; 1112a - First air channel; 1112b - Second air channel; 1113 - Second air-distributing hole; 1114 - Sealing groove; 1115 - Sink;

[0027] 120 - baffle ring structure; 121 - first baffle; 122 - second baffle; 1221 - first air-distributing hole; 123 - annular protrusion;

[0028] 130- air flow window;

[0029] 140-first pressure ring structure; 141-annular avoidance groove;

[0030] 200-light source assembly; 210-light emitting element; 220-light transmitting element; 230-second pressure ring structure; 240-reflecting element; 250-light box;

[0031] 300-process chamber; 310-chamber cover; 320-reaction space;

[0032] 400- load-bearing components;

[0033] 510 - first sealing ring; 520 - second sealing ring; 530 - third sealing ring; 540 - fourth sealing ring; 550 - annular gasket. DETAILED DESCRIPTION

[0034] The following will be combined with the drawings in the embodiments of this application to clearly and completely describe the technical solutions in the embodiments of this application. Obviously, the embodiments described are part of the embodiments of this application, not all of them. Based on the embodiments in this application, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of this application.

[0035] The terms "first," "second," and the like in the specification and claims of this application are used to distinguish similar objects, and are not used to describe a specific order or precedence. It should be understood that the terms used in this manner are interchangeable where appropriate, so that the embodiments of this application can be implemented in an order other than that illustrated or described herein, and that the objects distinguished by "first," "second," and the like are generally of the same type, and do not limit the number of objects; for example, the first object can be one or more. In addition, the term "and / or" in the specification and claims refers to at least one of the connected objects, and the character " / " generally indicates that the objects connected are in an "or" relationship.

[0036] The embodiments of the present application are described in detail below through specific embodiments and their application scenarios in conjunction with the accompanying drawings.

[0037] refer to Figures 1 to 9 The present invention discloses an air intake assembly 100 for use in semiconductor process equipment, for supplying process gases to a process chamber 300 of the semiconductor process equipment. The process chamber includes a reaction space 320 for a process reaction. Furthermore, the air intake assembly 100 is positioned above the reaction space 320 to facilitate supply of gas from above through the air intake assembly 100. The disclosed air intake assembly 100 includes an air intake ring structure 110 and a retaining ring structure 120.

[0038] Among them, such as Figures 1 to 6 As shown, the air intake ring structure 110 includes an annular main body 111. An annular groove 1111 is provided on the end surface of the main body 111 facing the reaction space 320. In addition, an air intake channel 1112 is provided in the main body 111 and communicates with the groove 1111. The air intake channel 1112 is used to receive gas and transmit the received gas to the groove 1111. For example, the air intake ring structure 110 can be a circular ring structure.

[0039] The retaining ring structure 120 includes an annular first baffle 121, which is fixed to the main body 111 and is used to close the opening of the groove 1111. In this way, after the opening of the groove 1111 is closed by the first baffle 121, a closed annular channel can be formed. The process gas transmitted into the groove 1111 through the inlet channel 1112 can flow along the annular channel to facilitate the subsequent flow into the reaction space 320 for the process reaction. For example, the retaining ring structure 120 can be a circular ring structure.

[0040] The retaining ring structure 120 also includes an annular second baffle 122, which is located on the side of the first baffle 121 facing the groove 1111, and the second baffle 122 is used to divide the space in the groove 1111 into a first annular cavity 1111a and a second annular cavity 1111b arranged in sequence along the radial direction of the retaining ring structure 120. In addition, the second baffle 122 is provided with a plurality of first uniform air holes 1221 arranged along the circumference of the second baffle 122, and the first annular cavity 1111a and the second annular cavity 1111b are connected through the plurality of first uniform air holes 1221.

[0041] For example, the plurality of first gas uniformity holes 1221 may be evenly arranged along the circumference of the second baffle 122 , so as to further improve the uniformity of the process gas entering the second annular cavity 1111 b .

[0042] In the embodiment of the present application, the groove 1111 is divided into two annular cavities by the second baffle 122, namely, the first annular cavity 1111a and the second annular cavity 1111b. Thus, the process gas can be transmitted and diffused separately through the first annular cavity 1111a and the second annular cavity 1111b, which is beneficial to improving the uniformity of the distribution of the process gas in the circumferential direction. In addition, the second baffle 122 also has a certain blocking effect on the process gas to prevent the process gas from entering the reaction space 320 too quickly and causing the wafer to be blown up.

[0043] Furthermore, the first annular cavity 1111a surrounds the second annular cavity 1111b, and the air inlet channel 1112 is connected to the first annular cavity 1111a. In this way, process gas can be introduced into the first annular cavity 1111a through the air inlet channel 1112, and the process gas is diffused in the first annular cavity 1111a. The diffused process gas enters the second annular cavity 1111b through multiple first uniform gas holes 1221 and diffuses again in the second annular cavity 1111b.

[0044] In order to allow the fully diffused process gas to enter the reaction space 320 for the process reaction, the air inlet ring structure 110 is further provided with a plurality of second uniform gas holes 1113 extending through the inner circumferential wall of the groove 1111. The second annular cavity 1111b is connected to the reaction space 320 via the plurality of second uniform gas holes 1113. In this way, the process gas, which has undergone two diffusion processes, can enter the reaction space 320 through the plurality of second uniform gas holes 1113 and participate in the process reaction. Therefore, the process gas undergoes two diffusion processes from the air inlet channel 1112 to the reaction space 320, so that the process gas has a sufficiently large diffusion area before entering the reaction space 320. In this case, the process gas can then enter the reaction space 320 from all sides through the plurality of second uniform gas holes 1113, thereby improving the diffusion uniformity of the process gas in the reaction space 320.

[0045] For example, the plurality of second gas uniformity holes 1113 may be evenly arranged along the circumference of the gas inlet ring structure 110 , so as to further improve the uniformity of the process gas entering the reaction space 320 .

[0046] In the related art, a single annular airway intake solution is used. When the process gas enters the annular airway from the main air inlet, it passes through the air holes of the air inlet ring while dispersing into the annular airway and then passes through the air holes far away from the main air inlet. The gas flow distribution uniformity is poor. Figure 8 As shown, there is more gas distribution in the area close to the main air inlet.

[0047] The embodiment of the present application adopts a double-layer uniform gas structure, such as Figure 9 As shown, by arranging the second baffle 122 in the annular channel surrounded by the groove 1111 and the first baffle 121, the annular channel is divided into a first annular cavity 1111a and a second annular cavity 1111b, which can achieve a double diffusion effect on the process gas, and can also play a buffering role on the process gas transmitted by the air inlet channel 1112, so as to slow down the flow rate of the process gas; and, by changing the flow area size and layout form of the first uniform air hole 1221 and the second uniform air hole 1113, it can be beneficial to improve the uniformity of the air intake, so as to alleviate the problem of poor uniformity of the film thickness on the surface of the slide and the wafer for several days, and improve the stability of the machine operation.

[0048] Based on the above configuration, the embodiment of the present application divides the space in the groove 1111 into a first annular cavity 1111a and a second annular cavity 1111b by the second baffle 122, the air inlet channel 1112 is connected to the first annular cavity 1111a, the first annular cavity 1111a and the second annular cavity 1111b are connected through a plurality of first uniform gas holes 1221, and the second annular cavity 1111b is connected to the reaction space 320 through a plurality of second uniform gas holes 1113. In this way, after the process gas enters the first annular cavity 1111a through the air inlet channel 1112, it is blocked and uniformly flowed by the second baffle 122 and flows uniformly. The process gas diffuses circumferentially in the first annular cavity 1111a to expand the distribution space of the process gas, and then enters the second annular cavity 1111b through multiple first uniform gas holes 1221, and undergoes secondary diffusion in the second annular cavity 1111b, which can make the process gas diffuse more fully, and finally enters the reaction space 320 through multiple second uniform gas holes 1113 and diffuses in the reaction space 320, so that the distribution of the process gas in each area after entering the reaction space 320 can be more uniform, thereby making the gas distribution on the wafer surface more uniform, improving the uniformity of the film thickness on the wafer surface, and improving product quality.

[0049] refer to Figure 4 In some embodiments, the flow area of ​​the second uniform air holes 1113 close to the air inlet channel 1112 is smaller than the flow area of ​​the second uniform air holes 1113 away from the air inlet channel 1112. This design can make the flow rate of process gas entering the reaction space 320 through the second uniform air holes 1113 in the two areas different.

[0050] It should be noted here that, since the process gas is introduced into the first annular cavity 1111a through the air inlet channel 1112 and then diffuses circumferentially in the first annular cavity 1111a, there is more process gas in the area close to the air inlet channel 1112 in the first annular cavity 1111a, and less process gas in the area away from the air inlet channel 1112; since the process gas in the first annular cavity 1111a enters the second annular cavity 1111b through multiple first uniform gas holes 1221, it is possible that there is more process gas in the area close to the air inlet channel 1112 in the second annular cavity 1111b, and less process gas in the area away from the air inlet channel 1112; finally, the process gas entering the reaction space 320 through multiple second uniform gas holes 1113 is unevenly distributed in the circumferential direction, which will cause uneven thickness of the process film layer on the wafer surface, affecting the product yield.

[0051] Based on the above situation, the embodiment of the present application reduces the air intake flow rate in the area by reducing the flow area of ​​the second air uniforming holes 1113 close to the air inlet channel 1112, and accordingly increases the air intake flow rate in the area by increasing the flow area of ​​the second air uniforming holes 1113 away from the air inlet channel 1112. In this way, the flow area of ​​the second air uniforming holes 1113 in different areas can be adjusted accordingly to offset the difference in air intake flow rate caused by the different distances between different areas and the air inlet channel 1112, so that the process gas distribution in different circumferential areas in the reaction space 320 can be more uniform, so as to alleviate the problem of uneven film thickness formed on the wafer surface due to uneven distribution of process gas in different areas.

[0052] It should be pointed out that the second uniform air hole 1113 close to the air intake channel 1112 area can be understood as the second uniform air hole 1113 located on the same radius as the air intake channel 1112. Of course, it can also be the second uniform air hole 1113 within a certain angle range with the radius of the air intake channel 1112. For example, the radius of the air intake channel 1112 is located on the X-axis (i.e., 0°), and forms an angle of ±45° on both sides of the X-axis. The second uniform air holes 1113 located between -45° and 0° and in the range of 0° to 45° can be regarded as the second uniform air holes 1113 close to the air intake channel 1112 area; the second uniform air holes 1113 located between -90° and -45° and in the range of 45° to 90° can be regarded as the second uniform air holes 1113 far away from the air intake channel 1112 area.

[0053] Furthermore, along the circumference of the air intake ring structure 110, the flow area of ​​the second air uniforming hole 1113 gradually increases from the location of the air intake channel 1112 to the direction away from the air intake channel 1112. This design can make the flow rate of the process gas entering the reaction space 320 gradually increase from the location of the air intake channel 1112 to the direction away from the air intake channel 1112, thereby making the distribution of the process gas more uniform.

[0054] In some embodiments, the aperture range of the second air uniforming hole 1113 close to the air inlet channel 1112 area can be 0.5mm~1.0mm, for example including: 0.5mm, 0.6mm, 0.7mm, 0.75mm, 0.8mm, 0.9mm, 1.0mm, etc. Of course, it can also be other values, which are not specifically limited here.

[0055] Exemplarily, the area close to the air intake channel 1112 may include four second air uniforming holes 1113. Along the circumference of the air intake ring structure 110, from the location of the air intake channel 1112 to the direction away from the air intake channel 1112, the apertures of the four second air uniforming holes 1113 may be 0.5 mm, 0.75 mm, 0.9 mm, and 1.0 mm.

[0056] The aperture range of the second air-uniform hole 1113 away from the air inlet channel 1112 area can be 2.0mm to 4.0mm, for example, including: 2.0mm, 2.5mm, 3.0mm, 3.5mm, 4.0mm, etc. Of course, it can also be other values, which are not specifically limited here.

[0057] Exemplarily, four second air uniforming holes 1113 may be included in an area away from the air intake channel 1112. Along the circumference of the air intake ring structure 110, from the location of the air intake channel 1112 to the direction away from the air intake channel 1112, the apertures of the four second air uniforming holes 1113 may be 2.0 mm, 2.5 mm, 3.0 mm, and 4.0 mm.

[0058] In some embodiments, along the circumference of the air inlet ring structure 110 and the retaining ring structure 120, any second air uniform hole 1113 is staggered with the first air uniform hole 1221. Based on this setting, the second air uniform hole 1113 and the first air uniform hole 1221 can be staggered with each other to form a circle of maze structure, so that the process gas can be further buffered to prevent the process gas from directly passing through the second air uniform hole 1113 and the first air uniform hole 1221 into the reaction space 320, which may easily cause the wafer to be blown up.

[0059] For example, any second gas uniformity hole 1113 may be located in the middle of two adjacent first gas uniformity holes 1221 in the circumferential direction. This design may improve the uniformity of process gas distribution, thereby improving the distribution uniformity of process gas.

[0060] In some embodiments, the air intake ring structure 110 may be provided with at least one layer of second air uniformity holes 1113 along the centerline direction of the air intake ring structure 110, with the plurality of second air uniformity holes 1113 in each layer arranged circumferentially along the air intake ring structure 110. This arrangement allows the process gas to be uniformly distributed circumferentially within the reaction space 320 while increasing the distribution area along the centerline direction, thereby, to a certain extent, improving the overall uniformity of the distribution of the process gas entering the reaction space 320.

[0061] In addition, along the centerline direction of the retaining ring structure 120, the second baffle 122 can be provided with at least one layer of first gas uniformity holes 1221, with the multiple first gas uniformity holes 1221 in each layer arranged along the circumference of the retaining ring structure 120. This arrangement can increase the distribution area along the centerline direction while ensuring that the process gas is evenly distributed along the circumference within the second annular cavity 1111b, thereby improving the overall distribution uniformity of the process gas within the second annular cavity 1111b to a certain extent.

[0062] refer to Figure 3In some embodiments, a recess 1115 may be provided at the opening of the groove 1111. The first baffle 121 is disposed within the recess 1115 and is welded to the main body 111. This arrangement prevents the first baffle 121 from being exposed, thereby effectively preventing installation interference between the intake ring structure 110 and other structures. Furthermore, a sealed connection between the first baffle 121 and the opening of the groove 1111 is ensured, thereby preventing process gas leakage.

[0063] For example, after the first baffle 121 is welded and fixed to the main body 111, it can be polished to make the surface of the first baffle 121 flush with the end face of the main body 111, so that the assembly surface is smoother when the intake ring structure 110 is assembled with other structures.

[0064] In other embodiments, the first baffle 121 may also be fixed in the sink 1115 by bonding or other methods.

[0065] In the embodiment of the present application, the first baffle 121 is connected to the main body 111 so that the first baffle 121 and the main body 111 can form a whole, which can not only ensure the sealing of the connection, but also reduce the risk of artificial introduction of particles when maintaining the equipment, and also improve the overall strength.

[0066] refer to Figure 1 and Figure 3 In some embodiments, the air intake assembly 100 may further include an air distribution window 130, one end surface of which abuts against an end surface of the air intake ring structure 110. Specifically, the air distribution window 130 may be located at the bottom of the air intake ring structure 110 to further facilitate the full diffusion of the process gas transmitted by the air intake ring structure 110 within the reaction space 320, thereby improving the uniformity of the distribution of the process gas within the reaction space 320.

[0067] In order to limit the uniform air window 130 in the center line direction, the air intake assembly 100 can also include a first pressure ring structure 140, which is connected to the air intake ring structure 110 and abuts against the other end face of the uniform air window 130. In this way, through the cooperation between the first pressure ring structure 140 and the air intake ring structure 110, the two ends of the uniform air window 130 can be limited in the center line direction, thereby ensuring that the uniform air window 130 will not move or even fall.

[0068] Furthermore, the edge of the air plenum 130 can abut against the rib of the first pressure ring structure 140 to achieve positioning of the air plenum 130. However, although this method can achieve positioning of the air plenum 130, based on the current installation method, each time the air intake ring structure 110 needs to be flipped 180°, the air plenum 130 needs to be installed on the air intake ring structure 110, and then the first pressure ring structure 140 needs to be installed. If the installation accuracy of the first pressure ring structure 140 is low, the rib of the first pressure ring structure 140 may not play an actual positioning role, and may even press against the air plenum 130.

[0069] Based on the above situation, in order to achieve the positioning of the air vent 130, the first baffle 121 can be provided with an annular protrusion 123 on the side away from the second baffle 122, such as Figure 3 As shown, the outer edge of the air-leveling window 130 abuts against the inner wall of the annular protrusion 123. In this way, the air-leveling window 130 can be radially positioned by the annular protrusion 123 to ensure the position accuracy of the air-leveling window 130 and prevent the air-leveling window 130 from moving randomly in the radial direction and affecting the diffusion effect on the process gas.

[0070] Furthermore, the surface of the first pressure ring structure 140 facing the intake ring structure 110 may be provided with an annular avoidance groove 141, such as Figure 3 As shown, the annular protrusion 123 is disposed in the annular avoidance groove 141 to prevent assembly interference between the intake ring structure 110 and the first pressure ring structure 140. In addition, the air plenum 130 can also be located in the avoidance groove, and the surface of the air plenum 130 facing the intake ring structure 110 is flush with the surface of the first pressure ring structure 140 facing the intake ring structure 110. In this way, the air plenum 130 can be limited in position while preventing the air plenum 130 from protruding out of the avoidance groove and interfering with the installation of the intake ring structure 110 and the first pressure ring structure 140.

[0071] Taking into account that the surface of the air uniforming window 130 abuts against the end face of the air intake ring structure 110, in order to prevent leakage of process gas, a first sealing ring 510 can be provided between the air uniforming window 130 and the air intake ring structure 110. The first sealing ring 510 can seal the surface of the air uniforming window 130 and the end face of the air intake ring structure 110, thereby effectively preventing leakage of process gas from there.

[0072] For example, the end surface of the intake ring structure 110 facing the air plenum window 130 may be provided with a first annular groove (i.e., a sealing groove), and the first sealing ring 510 is disposed in the first annular groove and abuts against the surface of the air plenum window 130. This not only achieves sealing but also facilitates the installation of the first sealing ring 510. Alternatively, the first sealing ring 510 may be a rubber ring, a plastic ring, or the like.

[0073] Taking into account the abutment between the surface of the air-distributing window 130 and the end face of the first pressure ring structure 140, in order to prevent leakage of process gas, a second sealing ring 520 can be provided between the air-distributing window 130 and the first pressure ring structure 140. The second sealing ring 520 can seal the surface of the air-distributing window 130 and the end face of the first pressure ring structure 140, thereby effectively preventing leakage of process gas from there.

[0074] For example, the end surface of the first pressure ring structure 140 facing the air vent 130 may be provided with a second annular groove (i.e., a sealing groove), and the second sealing ring 520 is disposed in the second annular groove and abuts against the surface of the air vent 130. In this way, sealing can be achieved and the installation of the second sealing ring 520 can be facilitated. In addition, the second sealing ring 520 may be a rubber ring, a plastic ring, etc.

[0075] Of course, to prevent the air-distributing window 130 from being damaged, annular gaskets may be provided between the air-distributing window 130 and the air inlet ring structure 110 and between the air-distributing window 130 and the first pressure ring structure 140 to play a buffering role.

[0076] refer to Figure 4 In some embodiments, the main body 111 may include an annular wall 111a and a first annular protrusion 111b and a second annular protrusion 111c located at both ends of the annular wall 111a along the centerline direction of the intake ring structure 110. The first annular protrusion 111b protrudes away from the centerline, and the second annular protrusion 111c protrudes toward the centerline, thereby forming an annular structure with a Z-shaped cross section.

[0077] Based on the above arrangement, when installing the air intake assembly 100, the first annular protrusion 111b can be overlapped on the upper end surface of the chamber cover 310 at the top of the process chamber 300 and fixed with fasteners to ensure the firmness and stability of the assembly between the air intake assembly 100 and the process chamber 300; the space enclosed by the annular wall 111a can be used to accommodate other structures, such as the light-transmitting component 220 of the light source assembly 200; the second annular protrusion 111c can be used to support other structures, such as the light-transmitting component 220 of the light source assembly 200.

[0078] Considering that the main body 111 is provided with an air duct consisting of an air inlet channel 1112 and a groove 1111, and the cross-section of the main body 111 is Z-shaped, the shape of the air duct formed by the air inlet channel 1112 and the groove 1111 can be adapted to the shape of the main body 111, that is, the entire air duct can also be Z-shaped.

[0079] Specifically, the air intake passage 1112 may include a first air passage 1112a and a second air passage 1112b. Figure 4As shown, the first gas channel 1112a is provided on the first annular protrusion 111b and extends radially along the intake ring structure 110. The second gas channel 1112b is provided on the annular wall 111a and extends along the centerline of the intake ring structure 110. The groove 1111 is provided on the second annular protrusion 111c. The first gas channel 1112a, the second gas channel 1112b and the groove 1111 are sequentially connected. At the same time, the first gas channel 1112a, the second gas channel 1112b and the groove 1111 form a Z-shaped gas channel, so that the external process gas is transmitted to the reaction space 320 through the Z-shaped gas channel for process reaction.

[0080] Based on the above-mentioned air intake assembly 100, the embodiment of the present application also discloses a semiconductor process equipment, referring to Figures 1 to 9 The disclosed semiconductor process equipment includes a light source assembly 200 , a process chamber 300 and the above-mentioned air intake assembly 100 .

[0081] Among them, the air intake component 100 is arranged at the top of the process chamber 300 and is connected to the process chamber 300 through multiple second air uniforming holes 1113. The light source component 200 is arranged at the top of the air intake component 100 and is used to provide light into the process chamber 300 through the air intake component 100.

[0082] Alternatively, as Figure 7 As shown, the light source assembly 200 may include a light-emitting element 210, a light-transmitting element 220, a second pressure ring structure 230, a reflective element 240, and a light box 250. The light-transmitting element 220 is disposed within the space enclosed by the air intake ring structure 110. The outer flange of the second pressure ring structure 230 abuts against the air intake ring structure 110 and is fastened thereto using fasteners. The inner flange of the second pressure ring structure 230 abuts against the light-transmitting element 220 to compress and secure the light-transmitting element 220. For example, the light-transmitting element 220 may be an observation window.

[0083] In some embodiments, an annular gasket 550 may be provided between the light source assembly 200 and the air intake assembly 100 to provide a buffering effect.

[0084] refer to Figure 2 and Figure 3 In some embodiments, a third sealing ring 530 may be disposed between the light-transmitting member 220 and the air intake ring structure 110 to provide a vacuum seal between the light-transmitting member 220 and the air intake ring structure 110. Specifically, a sealing groove 1114 may be defined on the end surface of the second annular protrusion 111c of the air intake ring structure 110 facing the light-transmitting member 220. The third sealing ring 530 may be disposed within the sealing groove 1114 to seal the second annular protrusion 111c and the light-transmitting member 220.

[0085] Exemplarily, the sealing groove 1114 may be in the form of a dovetail groove, a rectangular groove, a trapezoidal groove, or the like.

[0086] It should be noted here that, under a vacuum environment, the light-transmitting member 220 fits tightly against the air intake ring structure 110. In the embodiment of the present application, the sealing groove 1114 is designed to adjust the groove depth of the sealing groove 1114 from the standard 2.69 mm to 2 mm to 2.3 mm. At the same time, an annular gasket 550 is added between the light-transmitting member 220 and the air intake ring structure 110 and at the edge of the light-transmitting member 220. The thickness of the annular gasket 550 is 0.3 mm to 0.6 mm and the material is polytetrafluoroethylene. This annular gasket 550 can not only play a sealing role, but also a buffering role. The annular gasket 550 is used to raise the light-transmitting member 220 by 0.2 mm to 0.6 mm, supporting and protecting the light-transmitting member 220, and preventing the light-transmitting member 220 from colliding with the air intake ring structure 110 due to multiple gas pumping and high-temperature environments in the process chamber 300. This can solve the problem of edge fragmentation of the light-transmitting member 220 and improve the service life of equipment components. The working temperature of the third sealing ring 530 is 200°C, the sealing groove 1114 is 2mm deep and 4.4mm wide. Under the action of the vacuum force 10409.53N, the compression residual amount of the third sealing ring 530 is 2.528mm. In this way, the third sealing ring 530 will protrude from the sealing groove 1114 by 0.528mm. The annular gasket 550 designed with high temperature resistant material has a thickness of 0.5mm, which can provide certain support and buffering effects on the light-transmitting component 220.

[0087] In addition, a fourth sealing ring 540 may be provided between the light-transmitting member 220 and the second pressure ring structure 230 . The fourth sealing ring 540 can seal the vacuum between the light-transmitting member 220 and the second pressure ring structure 230 , and of course, can also play a certain buffering role.

[0088] In the embodiment of the present application, the working principle of the semiconductor process equipment is as follows:

[0089] The light box 250 is provided with a light-emitting component 210, such as a UV light source, and a reflective component 240. The light-transmitting component 220 plays the role of sealing the vacuum and transmitting the light source; the surface of the air-uniform window 130 is distributed with a plurality of through holes, such as 800 to 900 through holes with a diameter of 1 to 1.5 mm, which play the role of air uniformity and light transmission; the process chamber 300 is used to provide a vacuum environment; the supporting component 400 is arranged in the process chamber 300, and is used to carry and heat the wafer to provide the process temperature; the air inlet component 100 is used to transmit process gas into the process chamber 300.

[0090] During the process, the light emitted by the light-emitting component 210 is reflected by the reflective component 240, passes through the transparent component 220 and the air-distributing window 130, and acts on the surface of the wafer located on the supporting component 400, and solidifies the thin film on the surface of the wafer under the action of a certain temperature and gas.

[0091] To sum up, the embodiment of the present application adopts a double-layer gas uniformity structure, which can achieve the purpose of uniform gas flow, avoid the problems of unequal gas pressure and uneven flow caused by the different distances between the second gas uniformity holes 1113 in different areas and the air inlet channel 1112, thereby making it difficult for the wafer to slip, and can improve the uniformity of the thickness of the film layer on the wafer surface; in addition, a sealing connection method in which the first baffle 121 is fixedly connected to the main body 111 replaces the method of sealing the airway with a seal, which not only saves high-temperature resistant seals, but also allows the air inlet ring structure 110 and the baffle ring structure 120 to form a whole, thereby reducing the risk of artificially introducing particles when maintaining the equipment, and is also beneficial to improving the overall strength of the air inlet assembly 100.

[0092] The embodiments of the present application are described above in conjunction with the accompanying drawings, but the present application is not limited to the above-mentioned specific implementation methods. The above-mentioned specific implementation methods are merely illustrative and not restrictive. Under the guidance of this application, ordinary technicians in this field can also make many forms without departing from the purpose of this application and the scope of protection of the claims, all of which are within the protection of this application.

Claims

1. A gas inlet assembly for supplying gas to a process chamber (300), wherein the process chamber (300) has a reaction space (320), characterized in that: The air intake assembly (100) is used to be arranged above the reaction space (320), wherein the air intake assembly (100) comprises: an air intake ring structure (110) and a baffle ring structure (120); The air intake ring structure (110) comprises an annular main body (111), and an annular groove (1111) is provided on the end surface of the main body (111) facing the reaction space (320); an air intake channel (1112) communicating with the groove (1111) is also provided in the main body (111), and the air intake channel (1112) is used to receive gas and transmit the received gas to the groove (1111); The retaining ring structure (120) comprises an annular first baffle (121) and an annular second baffle (122); the first baffle (121) is fixed on the main body (111) and is used to close the opening of the groove (1111); the second baffle (122) is located on the side of the first baffle (121) facing the groove (1111), and the second baffle (122) is used to divide the space in the groove (1111) into a first annular cavity (1111a) and a second annular cavity (1111b) sequentially arranged along the radial direction of the retaining ring structure (120); the second baffle (122) is provided with a plurality of first uniform air holes (1221) arranged along the circumference of the second baffle (122), and the first annular cavity (1111a) and the second annular cavity (1111b) are communicated through the plurality of first uniform air holes (1221); The first annular cavity (1111a) surrounds the second annular cavity (1111b), the air inlet channel (1112) is connected to the first annular cavity (1111a), the air inlet ring structure (110) is further provided with a plurality of second air uniforming holes (1113) penetrating the inner peripheral wall of the groove (1111), and the second annular cavity (1111b) is connected to the reaction space (320) through the plurality of second air uniforming holes (1113).

2. The air intake assembly according to claim 1, characterized in that The flow area of ​​the second air-leveling hole (1113) close to the air inlet channel (1112) is smaller than the flow area of ​​the second air-leveling hole (1113) away from the air inlet channel (1112).

3. The air intake assembly according to claim 1, characterized in that The aperture of the second air-uniform hole (1113) close to the air inlet channel (1112) is in the range of 0.5 mm to 1.0 mm; And / or, the aperture range of the second air-uniform holes (1113) away from the air inlet channel (1112) is 2.0 mm to 4.0 mm.

4. The air intake assembly according to claim 1, characterized in that Along the circumference of the air intake ring structure (110) and the retaining ring structure (120), any one of the second air uniforming holes (1113) and the first air uniforming holes (1221) are arranged in a staggered manner.

5. The air intake assembly according to claim 1, characterized in that Along the centerline direction of the air intake ring structure (110), the air intake ring structure (110) is provided with at least one layer of the second air uniformity holes (1113), and a plurality of the second air uniformity holes (1113) in each layer are arranged along the circumference of the air intake ring structure (110); And / or, along the centerline direction of the retaining ring structure (120), the second baffle (122) is provided with at least one layer of the first air uniforming holes (1221), and the plurality of the first air uniforming holes (1221) in each layer are arranged along the circumference of the retaining ring structure (120).

6. The air intake assembly according to claim 1, characterized in that A sink (1115) is provided at the opening of the groove (1111), and the first baffle (121) is provided in the sink (1115); The first baffle (121) is fixed to the main body (111) by welding.

7. The air intake assembly according to claim 1, characterized in that An annular protrusion (123) is provided on a side of the first baffle (121) facing away from the second baffle (122); The air intake assembly (100) further comprises an air uniforming window (130), one end face of the air uniforming window (130) abuts against the end face of the air intake ring structure (110), and the outer edge of the air uniforming window (130) abuts against the inner wall of the annular protrusion (123).

8. The air intake assembly according to claim 7, characterized in that The air intake assembly (100) further includes a first pressure ring structure (140), the first pressure ring structure (140) being connected to the air intake ring structure (110) and abutting against the other end surface of the air uniforming window (130); An annular avoidance groove (141) is provided on the surface of the first pressure ring structure (140) facing the intake ring structure (110), and the annular protrusion (123) is provided in the annular avoidance groove (141).

9. The air intake assembly according to claim 8, characterized in that A first sealing ring (510) is provided between the air-distributing window (130) and the air-intake ring structure (110); And / or, a second sealing ring (520) is provided between the air-distributing window (130) and the first pressure ring structure (140).

10. The air intake assembly according to claim 1, wherein: The main body (111) comprises an annular wall (111a) and a first annular protrusion (111b) and a second annular protrusion (111c) respectively located at both ends of the annular wall (111a) along the centerline direction of the air intake ring structure (110), wherein the first annular protrusion (111b) protrudes away from the centerline, and the second annular protrusion (111c) protrudes toward the centerline. The air inlet channel (1112) includes a first air channel (1112a) and a second air channel (1112b), wherein the first air channel (1112a) is provided on the first annular protrusion (111b), the second air channel (1112b) is provided on the annular wall (111a), and the groove (1111) is provided on the second annular protrusion (111c), and the first air channel (1112a), the second air channel (1112b) and the groove (1111) are connected in sequence.

11. A semiconductor process equipment, characterized in that: include: A light source assembly (200), a process chamber (300), and an air inlet assembly (100) according to any one of claims 1 to 10; The air inlet assembly (100) is arranged on the top of the process chamber (300) and is connected to the process chamber (300) through a plurality of the second air-uniform holes (1113); The light source assembly (200) is disposed on the top of the air intake assembly (100) and is used to provide light into the process chamber (300) through the air intake assembly (100).

12. The semiconductor process equipment according to claim 11, wherein: An annular gasket (550) is provided between the light source assembly (200) and the air intake assembly (100).

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